JP2004163293A - オゾンガス濃度計測方法及びオゾンガス濃度計測装置 - Google Patents
オゾンガス濃度計測方法及びオゾンガス濃度計測装置 Download PDFInfo
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Abstract
【解決手段】オゾンガス供給系に紫外線吸収式オゾン濃度計測装置を配置する。オゾンガス供給系に負圧状態でオゾンガスを流通させる。紫外線吸収式オゾン濃度計測装置で検出した吸光強度と、紫外線吸収式オゾンガス濃度計測装置部分で検出した絶対圧力から被計測ガス中のオゾンガス濃度を求める。
【選択図】 図2
Description
【発明の属する技術分野】
本発明は、オゾンガス濃度の計測方法及びその装置に関し、特に、発生したオゾンを濃縮して得られる高濃度オゾンガスや極低流量でオゾナイザーを運転した際に得られる高濃度オゾンガスの濃度計測方法及びその装置に関する。
【0002】
【従来の技術】
従来から、オゾンガスの濃度を計測する方法として紫外線吸収法が知られている。これは、オゾンが紫外線領域の254nm付近に最大吸収帯を持ち、この254nm域では他の気体の吸収強度が小さいことを利用して濃度を求める方法であり、オゾンを含まない標準ガス(ゼロガス)と、計測対象ガス(試料ガス)とをオゾンガス濃度計の紫外線吸収セル内に個別に流し、それぞれの吸光強度から計測対象ガスのガス濃度を計測するようになっている。
【0003】
【特許文献1】
特開2000−19107号公報(段落0002〜0004、図4)
【0004】
【発明が解決しようとする課題】
ところが、従来の紫外線吸収式オゾンガス濃度計は、オゾンガス濃度10vol %以下のオゾンガスの濃度測定用に形成してあり、オゾンガス濃度15vol %以上の高濃度オゾンガスの濃度を計測できるものは提供されていない。
【0005】
さらに、オゾンガスの圧力が高い場合、例えば、大気圧下では紫外線吸光光路、すなわち、オゾンガスの厚みを50μmと薄くしてもオゾンガス濃度が10vol %を超えると大部分の紫外線がオゾンガスに吸収されるため、高精度のオゾン濃度検出ができなかった。
【0006】
これは従来、純酸素ガスを原料として高能力のオゾン発生器でオゾンを発生させても通常の運転方法では10vol %程度の濃度のオゾンガスしか生成することができず、15vol %以上の高濃度オゾンガスが実用化されていなかったことに起因していると考えられる。
【0007】
近年、半導体製造分野等では、酸化膜製造等の用途に使用するために15vol %以上の高濃度オゾンが要望されてきている。この場合、オゾンガスの濃度は酸化膜厚形成に大きな影響を及ぼすことになるから、高濃度オゾンガスの濃度を高精度に、しかもインラインで計測できるオゾンガス濃度計測技術が待望されている。
【0008】
本発明は、このような点に着目してなされたものであり、高濃度のオゾンガスでも、容易に、かつ正確にその濃度を測定することのできるオゾンガス濃度の計測方法並び計測装置を提供することを目的とする。
【0009】
【課題を解決するための手段】
上述の目的を達成するために請求項1に記載の本発明では、オゾンガス流通路に両面を紫外線透過ガラスで構成した紫外線透過窓を形成し、その一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測方法において、オゾンガス流通路に負圧のオゾンガスを流通させ、このオゾンガス流通路での絶対圧を紫外線吸光強度と同時に計測し、これらの計測値からオゾン濃度を求めるようにしたことを特徴としている。
【0010】
また、請求項2に記載の発明では、オゾンガス流通路内を流通させるオゾンガスの圧力を100Pa〜50kPaとしたことを特徴とし、請求項3に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を計測し、該ガス通路のコンダクタンスと、計測したオゾンガス流量とに基づき紫外線透過ガラス部の絶対圧力を補正して、オゾンガス濃度を求めるようにしたことを特徴とし、請求項4に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を計測し、予め求めておいた紫外線透過ガラス部を通過する際に生ずる紫外線照射により分解するオゾン分解率とオゾンガス流量ならびにオゾン濃度の関係からオゾン濃度の補正を行うようにしたことを特徴とし、請求項5に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を100sccm以下に設定したことを特徴とし、請求項6に記載した発明は、オゾンガス流通路内のガス温度とオゾンガス流路自体の温度との少なくとも一方を計測し、オゾン濃度を標準状態に換算することを特徴とし、請求項7に記載した発明は、オゾンガス流通路内を流通するオゾンガスをオゾンガス濃度15vol %以上の高濃度オゾンガスにしたことを特徴としている。
【0011】
さらに、請求項8に記載の発明では、オゾンガス流通路内の絶対ガス圧を100Pa以下とすることでオゾンガス濃度の零点補正を行うことを特徴とし、請求項9に記載の発明は、オゾンガスを密閉容器に封入し電気火花などでオゾンガスを完全に分解し、その圧力上昇から求めたオゾン濃度を校正値とすることを特徴としている。
【0012】
請求項10に記載の本発明は、オゾンガス流通路の両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、オゾンガス流通路の出口側を真空ポンプで排気するとともに紫外線透過窓近傍に圧力センサーを配して、オゾンガス流通路内の絶対圧を紫外線吸光強度と同時に計測し、これらの計測値をオゾン濃度算出部に伝達してオゾン濃度を求めることを特徴としたものである。
【0013】
そして、請求項11に記載した発明では、紫外線透過窓を構成している紫外線透過ガラスの間隔を50μm以上に構成したことを特徴とし、請求項12に記載した発明は、オゾンガス流通路を流れるオゾンガス流量を制御するとともにオゾンガス流量値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とし、請求項13に記載した発明は、オゾンガス流通路内とオゾンガス流通路を構成している配管との少なくとも一方にオゾンセンサーを取り付けてオゾンガス濃度を計測し、その計測値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とし、請求項14に記載の発明は、オゾンガス算出部では紫外線透過窓におけるオゾンガスの絶対圧、温度がセンサーの計測値から換算されると共に、オゾンガスの濃度と紫外線吸光強度、オゾンガスの絶対圧、温度、オゾンガス流量、紫外線照射によるオゾン分解率との関係が定義されていることを特徴とし、請求項15に記載の発明は、オゾンガス流通路の出口がオゾン処理をする真空槽に直接接続されており、濃度計測済みのオゾンガスをオゾン処理に使用するようにしたことを特徴とし、請求項16に記載の発明は、オゾンガス流通路の内面を高濃度オゾンで不動態化処理したことを特徴とし、請求項17に記載の発明は、オゾンガス流通路の両面に紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、ガス通路内でのガス圧を100Pa以下に設定し、オゾンガス濃度のゼロガス構成を行うように構成したことを特徴としている。
【0014】
【発明の作用】
本発明では、両面を紫外線透過ガラスで構成してある紫外線透過窓の一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置してなるオゾンガス流通路(紫外線吸収セル)に、測定対象となるオゾンガスを負圧の圧力条件で流通させている。これにより、流通ガス中のオゾン分子数の絶対量が少なくなり、オゾン濃度が高濃度となった場合は特に、僅かな濃度変化があっても、吸光強度に大きな差が現れる。したがって、オゾン濃度を高精度に測定することができることになる。
【0015】
また、同じオゾン濃度でもオゾン分子数は流通ガスの圧力に比例するため、オゾン濃度を正確に得るためには、紫外線吸収セル部分の絶対圧を正確に測定することが不可欠である。本発明では、オゾンガス流通路の絶対圧を計測し、その計測値を直接用い、または、オゾンガス流量に応じた補正を行うことで紫外線吸収セル部分での絶対圧を算出し、オゾン濃度を求めるように構成している。
【0016】
さらに、流通ガス流量が小さい場合、特に、100sccm以下では紫外線吸光セル部分で紫外線を照射された場合、紫外線の吸光と同時に、オゾン分解が発生するため、紫外線の吸光強度は実際のオゾン濃度よりも小さくなってしまう。そこで、予め、紫外線照射によるオゾン分解率とオゾンガス流量並びにオゾン濃度の関係を求めておき、オゾン濃度を補正する構成としている。
【0017】
また、オゾンガス流通路内のガス温度を直接計測することで、オゾン濃度を標準状態に換算できる。ただし、流通ガスが負圧で流量が小さい場合、紫外線吸光セル近傍のオゾンガス流路自体の温度自体を計測したほうが、オゾンガス自体の温度の計測点が紫外線吸光セルから離れる場合には、より正確な計測ができる。
【0018】
さらに、定期的な零点補正は、通常はガス流路を切り替えてオゾンを含まない空気や酸素などを供給した時の紫外線吸光強度をリファレンスとして補正を行っているが、本発明ではオゾンガス流通路の圧力を100Pa以下とすることで残存するオゾン分子量を非常に少なくすることで零点補正を行うことができる。
【0019】
一方、オゾン濃度の構成は、負圧のオゾンガスを密閉容器内に封入し電気火花などを用いてオゾンガスを完全に分解し、密閉容器の圧力上昇からオゾン濃度を求める爆発法を基準として行うことで、負圧下のオゾンガス濃度の校正も可能となる。
【0020】
【発明の実施の形態】
図1は本発明を適用したオゾンガス供給系での濃度測定システムの概略構成図であり、オゾンガス供給源(1)と真空ポンプ(4)との間に、オゾンガス濃度計測装置(2)が装着してある。また、オゾンガス濃度計測装置(2)を校正する場合には、爆発式オゾン濃度校正器(3)を、例えば、オゾンガス濃度計測装置(2)と真空ポンプ(4)に接続すると良い。
【0021】
オゾンガス濃度計測装置(2)は図2に示すように、内部にオゾンガス流通路(5)を形成しているケーシング(6)に紫外線透過窓(7)を形成し、この紫外線透過窓(7)部分に一対の紫外線透過ガラス(8)を50μm以上の間隔を持たせた状態で対向させて配置し、紫外線透過ガラス(8)間をオゾンガス流通路(5)に形成することで紫外線吸収セルに構成してある。そして、紫外線透過ガラス(8)で形成した紫外線透過窓(7)部分に、紫外線発光部(9)と紫外線受光部(10)とが紫外線透過ガラス(8)で形成したオゾンガス流通路(5)を挟んで対向する状態に配置してある。そして、オゾンガス濃度計測装置(2)は、そのオゾンガス流通路(5)における出口路部分を図1で示した爆発式オゾン濃度構成器(3)の代わりにオゾンガス消費装置(図示略)を介して前記真空ポンプ(4)に接続し、オゾンガス濃度計測装置(2)でガス濃度を計測されたオゾンガスをオゾンガス消費装置に供給するとよい。
【0022】
紫外線発光部(9)は、紫外線ランプ(11)と、紫外線ランプ電源(12)と、紫外線(30)を透過光(31)と反射光(32)に分割するハーフミラー(13)とで形成してある。そして、紫外線受光部(10a)での紫外線透過窓(7)を通過した反射光(32)の紫外線光量と紫外線受光部(10b)での透過光(31)の紫外線光量をオゾン濃度算出装置(14)に伝達するようにしてある。勿論、紫外線発光部(9)の構成により透過光(31)が紫外線透過窓(7)を通過する場合もある。
【0023】
オゾンガス濃度計測装置(2)での紫外線透過窓(7)の近傍部にオゾンガス流通路(5)内の圧力を検知する圧力センサー(15)とオゾンガス流通路(5)内を流れるオゾンガスの温度を検知する温度センサー(16a)とが配置してある。そして、この圧力センサー(15)で検出した圧力信号と温度センサー(16a)で検出した温度信号は、前記オゾン濃度算出装置(14)に入力されるようになっている。なお、オゾンガス流量が少ない場合には紫外線透過窓(7)の極近傍のケーシング(6)に取り付けた温度センサー(16b)を用いた方がオゾンガス温度を正確に計測できる。
【0024】
また、オゾンガス濃度計測装置(2)の紫外線透過窓(7)を形成している個所よりも下流側に位置するガス出口路(17)にマスフローコントローラ(18)が配置してある。なお、オゾンガス濃度計測装置(2)でのオゾンガス流通路(5)やオゾンガス供給路(19)の内面を高濃度(例えば15vol%以上)に濃縮処理したオゾンガスで不動態化処理しておくと、オゾンガス流通路(5)やオゾンガス供給路(19)の内面に酸化不動態膜が形成され、オゾンガスの自然分解や流路壁面との反応によりオゾンガスが分解消費されることを防止することができる。
図中符号(20)はオゾン濃度算出装置(14)で算出されたオゾンガス濃度の表示部である。
【0025】
オゾンガス供給源(1)としては、空気分離装置や酸素ガスシリンダ等の酸素源と、オゾン発生器及びオゾンガス濃縮装置等とで構成したオゾン製造ユニットや、高濃度オゾンガスを貯蔵したガスシリンダなどのガス貯蔵容器が考えられる。
【0026】
このように構成したオゾンガス濃度測定システムでは、負圧状態(100Pa〜50kPa)でオゾンガス供給路(19)を所定流量(100sccm)で流れているオゾンガスをオゾンガス濃度計測装置(4)に導入して測定した紫外線吸光強度をオゾン濃度算出装置(14)に入力し、オゾン濃度算出装置(14)では紫外線吸光強度を温度、圧力及びオゾン流量に基づいて補正して演算することにより、オゾンガス流通路(5)内を流れるオゾンガス濃度を計測して表示部(20)に表示するようになっている。この場合、オゾンガス流通路(5)のコンダクタンスとオゾンガス流通路(5)内を流れているガス流量とに基づいて紫外線吸収セル部分での絶対圧を補正している。また、オゾンガス流通路(5)内の圧力を100Pa(0.7Torr)以下の真空状態にして紫外線吸光強度を計測することにより、無オゾン状態での紫外線吸光強度を計測してゼロガス校正を行っている。
【0027】
ここで、測定対象ガス(オゾンガス)での紫外線吸光強度をI、標準ガス又は100Pa以下の真空状態での紫外線吸光強度をI0、モル吸光係数をε[L/mol・cm]、測定光路長をd[cm]、オゾン濃度をC[mol/L]、測定対象ガスの圧力をP[kPa]、測定対象ガスの温度をT[K]、基準圧をPN(101.3kPa)、基準温度をTN(273K)とした場合、オゾン濃度と紫外線吸光強度との関係は次式で表すことができる。
【式1】
【0028】
本発明では、負圧状態でオゾンガス濃度を測定するようにしていることから、高濃度のオゾンガスであっても、そのオゾン分子の数が少なく、オゾン濃度の僅かな変動に対しても紫外線吸光強度の変化が大きく表れることになるから、測定対象となっているオゾンガス濃度を高精度に測定することができることになる。
【0029】
本発明方法では、検出センサーであるオゾンガス濃度計測装置(2)、圧力センサー(15)、温度センサー(16a)(16b)、マスフローメータ(18)と、オゾン濃度算出装置(14)並びに表示部(20)を離して配置しておくことができ、また、複数の検出センサー部からの情報を1台のオゾン濃度算出装置(14)並びに表示部(20)で処理・表示することもできる。
【0030】
さらに、上記のオゾンガス濃度測定システムでは、オゾンガス濃度計測装置(2)のオゾンガス流通路(5)内を100Pa以下の超高真空状態にして紫外線吸光強度を計測することによりゼロガス校正を行っているが、オゾンガス濃度計測装置(2)のオゾンガス流通路(5)内に標準ガスを流して、ゼロガス校正を行うようにしても良い。
【0031】
オゾン濃度の校正を爆発式オゾン濃度校正器(3)を用いる場合、図1のように爆発式オゾン濃度校正器(3)にオゾン濃度計測装置(2)を通過したオゾンガスを直接導入しても良いし、三方弁(41)、バイパス(42)、三方弁(43)を通過させることでオゾンガス濃度計測装置(2)を軽油させることなく導入しても良い。
【0032】
爆発式オゾン濃度校正器(3)では導入したオゾンガスを三方弁(43)とバルブ(48)を封じ切って電源(47)より高電圧を供給して火花ギャップ(46)で火花を飛ばしてオゾンガスを爆発させて完全に分解させる。爆発前後の温度と圧力を温度センサー(44)と圧力センサー(45)で計測することでオゾン濃度が得られる。こうして得られたオゾン濃度でオゾンガス濃度計測装置(2)の校正を行うと良い。
【0033】
【発明の効果】
本発明では、測定対象となるオゾンガスを負圧の圧力条件で紫外線吸収式オゾン濃度計測装置の紫外線吸収セル内を流通させていることから、流通ガス中のオゾン分子の絶対数が少なく、僅かな濃度変化があっても、吸光強度に大きな差が現れる。したがって、計測対象ガス中のオゾンガス濃度を高精度に測定することができる。
【0034】
また、本発明では、オゾンガス濃度計測装置部分で検出した絶対圧力に基づき濃度を演算算出するようにしてあることから、圧力の影響が現れやすい負圧状態下での測定であっても計測対象ガス中のオゾンガス濃度を高精度に検出することができる。
【図面の簡単な説明】
【図1】本発明を適用したオゾンガス濃度測定システムの概略構成図である。
【図2】オゾンガス濃度計測装置の概略構成図である。
Claims (17)
- オゾンガス流通路の両面に紫外線透過ガラスで構成した紫外線透過窓を配置し、その一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測方法において、
オゾンガス流通路に負圧のオゾンガスを流通させ、このオゾンガス流通路での絶対圧を紫外線吸光強度と同時に計測し、これらの計測値からオゾン濃度を求めるようにしたことを特徴とするオゾンガス濃度計測方法。 - オゾンガス流通路内を流通させるオゾンガスの圧力が100Pa〜50kPaである請求項1に記載のオゾンガス濃度計測方法。
- オゾンガス流通路内を流れるオゾンガス流量を計測し、その値と、絶対圧の計測点と紫外線透過窓の間のコンダクタンスから、絶対圧の計測値を紫外線透過ガラス部の絶対圧力に換算して、オゾンガス濃度を求めるようにした請求項1または2に記載のオゾンガス濃度計測方法。
- オゾンガス流通路内を流れるオゾンガス流量を計測し、予め求めておいた紫外線透過ガラス部を通過する際に生じる紫外線照射により分解するオゾン分解率とオゾンガス流量並びにオゾン濃度の関係から請求項1から3のいずれかの方法で求めたオゾン濃度の補正を行うことを特徴とするオゾンガス濃度計測方法。
- オゾンガス流通路内を流れるオゾンガス流量を100sccm以下とした請求項1から4のいずれか1項に記載のオゾンガス濃度計測方法。
- オゾンガス流通路内のガス温度とオゾンガス流路自体の温度との少なくとも一方を計測し、請求項1から5のいずれかの方法で求めたオゾン濃度を標準状態に換算することを特徴とするオゾンガス濃度計測方法。
- オゾンガス流通路内を流通するオゾンガスが、オゾンガス濃度15vol %以上の高濃度オゾンガスである請求項1から6のいずれか1項に記載のオゾンガス濃度計測方法。
- オゾンガス流通路内の絶対ガス圧を100Pa以下とすることでオゾンガス濃度の零点補正を行うことを特徴とする請求項1から7のいずれか1項に記載のオゾンガス濃度計測方法。
- オゾンガスを密閉容器に封入し電気火花などでオゾンガスを完全に分解し、その圧力上昇から求めたオゾン濃度を校正値とすることを特徴とする請求項1から8のいずれか1項に記載のオゾンガス濃度計測方法。
- オゾンガス流通路に両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、
オゾンガス流通路の出口側を真空ポンプで排気するとともに紫外線透過窓近傍に圧力センサーを配して、オゾンガス流通路内の絶対圧を紫外線吸光強度と同時に計測し、これらの計測値をオゾン濃度算出部に伝達してオゾン濃度を求めることを特徴とするオゾンガス濃度計測装置。 - 紫外線透過窓を構成している紫外線透過ガラスの間隔を50μm以上に構成した請求項10に記載のオゾンガス濃度計測装置。
- オゾンガス流通路を流れるオゾンガス流量を制御するとともにオゾンガス流量値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とする請求項10又は11に記載のオゾンガス濃度計測装置。
- オゾンガス流通路を構成している配管とオゾンガス流通路内との少なくとも一方にオゾンセンサーを取り付けてオゾンガスの濃度を計測し、その計測値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とする請求項10から12のいずれか1項に記載のオゾンガス濃度計測装置。
- オゾンガス算出部では紫外線透過窓におけるオゾンガスの絶対圧、温度がセンサーの計測値から換算されると共に、オゾンガス濃度と紫外線吸光強度、オゾンガスの絶対圧、温度、オゾンガス流量、紫外線照射によるオゾン分解率との関係が定義されていることを特徴とする請求項10から13のいずれか1項に記載のオゾンガス濃度計測装置。
- オゾンガス流通路の出口がオゾン処理をする真空槽に直接接続されており、濃度計測済みのオゾンガスをオゾン処理に使用するようにしたことを特徴とする請求項10から14のいずれか1項に記載のオゾンガス濃度計測装置。
- オゾンガス流通路の内面を高濃度オゾンで不動態化処理してある請求項10から15のいずれか1項に記載のオゾンガス濃度計測装置。
- オゾンガス流通路の両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、
ガス通路内でのガス圧を100Pa以下に設定し、オゾンガス濃度のゼロガス校正を行うことを特徴とするオゾンガス濃度計測装置。
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US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11094582B2 (en) | 2016-07-08 | 2021-08-17 | Asm Ip Holding B.V. | Selective deposition method to form air gaps |
US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US11101370B2 (en) | 2016-05-02 | 2021-08-24 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11242598B2 (en) | 2015-06-26 | 2022-02-08 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11410851B2 (en) | 2017-02-15 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11649546B2 (en) | 2016-07-08 | 2023-05-16 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11658030B2 (en) | 2017-03-29 | 2023-05-23 | Asm Ip Holding B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122245A (ja) * | 1988-10-31 | 1990-05-09 | Teru Yamanashi Kk | オゾン濃度測定装置 |
JPH07318487A (ja) * | 1994-05-24 | 1995-12-08 | Dairetsuku Kk | オゾン濃度計 |
JPH0933429A (ja) * | 1995-07-24 | 1997-02-07 | Toshiba Corp | オゾン濃度計 |
JP2002005826A (ja) * | 2000-06-20 | 2002-01-09 | Kobe Steel Ltd | 光吸収式オゾン濃度計 |
JP2004085407A (ja) * | 2002-08-28 | 2004-03-18 | Meidensha Corp | オゾンガス濃度測定方法及びその装置 |
-
2002
- 2002-11-14 JP JP2002330152A patent/JP4009523B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02122245A (ja) * | 1988-10-31 | 1990-05-09 | Teru Yamanashi Kk | オゾン濃度測定装置 |
JPH07318487A (ja) * | 1994-05-24 | 1995-12-08 | Dairetsuku Kk | オゾン濃度計 |
JPH0933429A (ja) * | 1995-07-24 | 1997-02-07 | Toshiba Corp | オゾン濃度計 |
JP2002005826A (ja) * | 2000-06-20 | 2002-01-09 | Kobe Steel Ltd | 光吸収式オゾン濃度計 |
JP2004085407A (ja) * | 2002-08-28 | 2004-03-18 | Meidensha Corp | オゾンガス濃度測定方法及びその装置 |
Cited By (332)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006029836A (ja) * | 2004-07-13 | 2006-02-02 | Horiba Ltd | ガス分析計の校正方法およびガス分析計 |
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JP2009281944A (ja) * | 2008-05-23 | 2009-12-03 | Meidensha Corp | 基板温度測定方法とその装置及びプロセス制御方法とそのシステム |
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US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
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US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11976359B2 (en) | 2020-01-06 | 2024-05-07 | Asm Ip Holding B.V. | Gas supply assembly, components thereof, and reactor system including same |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
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