JP2004163293A - Method and apparatus for measuring ozone gas concentration - Google Patents

Method and apparatus for measuring ozone gas concentration Download PDF

Info

Publication number
JP2004163293A
JP2004163293A JP2002330152A JP2002330152A JP2004163293A JP 2004163293 A JP2004163293 A JP 2004163293A JP 2002330152 A JP2002330152 A JP 2002330152A JP 2002330152 A JP2002330152 A JP 2002330152A JP 2004163293 A JP2004163293 A JP 2004163293A
Authority
JP
Japan
Prior art keywords
ozone gas
ozone
concentration
ultraviolet
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002330152A
Other languages
Japanese (ja)
Other versions
JP4009523B2 (en
Inventor
Kunihiko Koike
国彦 小池
Sadanori Nakamura
貞紀 中村
Shunsuke Hosokawa
俊介 細川
Masaharu Otsuki
雅晴 大槻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DYLEC Inc
MASUDA KENKYUSHO KK
Iwatani Corp
Original Assignee
DYLEC Inc
MASUDA KENKYUSHO KK
Iwatani International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DYLEC Inc, MASUDA KENKYUSHO KK, Iwatani International Corp filed Critical DYLEC Inc
Priority to JP2002330152A priority Critical patent/JP4009523B2/en
Publication of JP2004163293A publication Critical patent/JP2004163293A/en
Application granted granted Critical
Publication of JP4009523B2 publication Critical patent/JP4009523B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for measuring ozone gas concentration, which can easily and accurately measure the ozone gas concentration even in the case ozone gas is present at high concentrations. <P>SOLUTION: In the method, an ozone concentration measuring apparatus which is an ultraviolet ray absorption type, is disposed in an ozone gas supplying system, and the ozone gas flows through the ozone gas supplying system in a negative pressure condition. The ozone gas concentration of the gas to be measured is determined based on both an absorption value of light being detected by the ultraviolet ray absorption type ozone concentration measuring apparatus and an absolute pressure value being detected at the region where the ultraviolet ray absorption type ozone concentration measuring apparatus is disposed. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、オゾンガス濃度の計測方法及びその装置に関し、特に、発生したオゾンを濃縮して得られる高濃度オゾンガスや極低流量でオゾナイザーを運転した際に得られる高濃度オゾンガスの濃度計測方法及びその装置に関する。
【0002】
【従来の技術】
従来から、オゾンガスの濃度を計測する方法として紫外線吸収法が知られている。これは、オゾンが紫外線領域の254nm付近に最大吸収帯を持ち、この254nm域では他の気体の吸収強度が小さいことを利用して濃度を求める方法であり、オゾンを含まない標準ガス(ゼロガス)と、計測対象ガス(試料ガス)とをオゾンガス濃度計の紫外線吸収セル内に個別に流し、それぞれの吸光強度から計測対象ガスのガス濃度を計測するようになっている。
【0003】
【特許文献1】
特開2000−19107号公報(段落0002〜0004、図4)
【0004】
【発明が解決しようとする課題】
ところが、従来の紫外線吸収式オゾンガス濃度計は、オゾンガス濃度10vol %以下のオゾンガスの濃度測定用に形成してあり、オゾンガス濃度15vol %以上の高濃度オゾンガスの濃度を計測できるものは提供されていない。
【0005】
さらに、オゾンガスの圧力が高い場合、例えば、大気圧下では紫外線吸光光路、すなわち、オゾンガスの厚みを50μmと薄くしてもオゾンガス濃度が10vol %を超えると大部分の紫外線がオゾンガスに吸収されるため、高精度のオゾン濃度検出ができなかった。
【0006】
これは従来、純酸素ガスを原料として高能力のオゾン発生器でオゾンを発生させても通常の運転方法では10vol %程度の濃度のオゾンガスしか生成することができず、15vol %以上の高濃度オゾンガスが実用化されていなかったことに起因していると考えられる。
【0007】
近年、半導体製造分野等では、酸化膜製造等の用途に使用するために15vol %以上の高濃度オゾンが要望されてきている。この場合、オゾンガスの濃度は酸化膜厚形成に大きな影響を及ぼすことになるから、高濃度オゾンガスの濃度を高精度に、しかもインラインで計測できるオゾンガス濃度計測技術が待望されている。
【0008】
本発明は、このような点に着目してなされたものであり、高濃度のオゾンガスでも、容易に、かつ正確にその濃度を測定することのできるオゾンガス濃度の計測方法並び計測装置を提供することを目的とする。
【0009】
【課題を解決するための手段】
上述の目的を達成するために請求項1に記載の本発明では、オゾンガス流通路に両面を紫外線透過ガラスで構成した紫外線透過窓を形成し、その一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測方法において、オゾンガス流通路に負圧のオゾンガスを流通させ、このオゾンガス流通路での絶対圧を紫外線吸光強度と同時に計測し、これらの計測値からオゾン濃度を求めるようにしたことを特徴としている。
【0010】
また、請求項2に記載の発明では、オゾンガス流通路内を流通させるオゾンガスの圧力を100Pa〜50kPaとしたことを特徴とし、請求項3に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を計測し、該ガス通路のコンダクタンスと、計測したオゾンガス流量とに基づき紫外線透過ガラス部の絶対圧力を補正して、オゾンガス濃度を求めるようにしたことを特徴とし、請求項4に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を計測し、予め求めておいた紫外線透過ガラス部を通過する際に生ずる紫外線照射により分解するオゾン分解率とオゾンガス流量ならびにオゾン濃度の関係からオゾン濃度の補正を行うようにしたことを特徴とし、請求項5に記載の発明では、オゾンガス流通路内を流れるオゾンガス流量を100sccm以下に設定したことを特徴とし、請求項6に記載した発明は、オゾンガス流通路内のガス温度とオゾンガス流路自体の温度との少なくとも一方を計測し、オゾン濃度を標準状態に換算することを特徴とし、請求項7に記載した発明は、オゾンガス流通路内を流通するオゾンガスをオゾンガス濃度15vol %以上の高濃度オゾンガスにしたことを特徴としている。
【0011】
さらに、請求項8に記載の発明では、オゾンガス流通路内の絶対ガス圧を100Pa以下とすることでオゾンガス濃度の零点補正を行うことを特徴とし、請求項9に記載の発明は、オゾンガスを密閉容器に封入し電気火花などでオゾンガスを完全に分解し、その圧力上昇から求めたオゾン濃度を校正値とすることを特徴としている。
【0012】
請求項10に記載の本発明は、オゾンガス流通路の両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、オゾンガス流通路の出口側を真空ポンプで排気するとともに紫外線透過窓近傍に圧力センサーを配して、オゾンガス流通路内の絶対圧を紫外線吸光強度と同時に計測し、これらの計測値をオゾン濃度算出部に伝達してオゾン濃度を求めることを特徴としたものである。
【0013】
そして、請求項11に記載した発明では、紫外線透過窓を構成している紫外線透過ガラスの間隔を50μm以上に構成したことを特徴とし、請求項12に記載した発明は、オゾンガス流通路を流れるオゾンガス流量を制御するとともにオゾンガス流量値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とし、請求項13に記載した発明は、オゾンガス流通路内とオゾンガス流通路を構成している配管との少なくとも一方にオゾンセンサーを取り付けてオゾンガス濃度を計測し、その計測値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とし、請求項14に記載の発明は、オゾンガス算出部では紫外線透過窓におけるオゾンガスの絶対圧、温度がセンサーの計測値から換算されると共に、オゾンガスの濃度と紫外線吸光強度、オゾンガスの絶対圧、温度、オゾンガス流量、紫外線照射によるオゾン分解率との関係が定義されていることを特徴とし、請求項15に記載の発明は、オゾンガス流通路の出口がオゾン処理をする真空槽に直接接続されており、濃度計測済みのオゾンガスをオゾン処理に使用するようにしたことを特徴とし、請求項16に記載の発明は、オゾンガス流通路の内面を高濃度オゾンで不動態化処理したことを特徴とし、請求項17に記載の発明は、オゾンガス流通路の両面に紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、ガス通路内でのガス圧を100Pa以下に設定し、オゾンガス濃度のゼロガス構成を行うように構成したことを特徴としている。
【0014】
【発明の作用】
本発明では、両面を紫外線透過ガラスで構成してある紫外線透過窓の一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置してなるオゾンガス流通路(紫外線吸収セル)に、測定対象となるオゾンガスを負圧の圧力条件で流通させている。これにより、流通ガス中のオゾン分子数の絶対量が少なくなり、オゾン濃度が高濃度となった場合は特に、僅かな濃度変化があっても、吸光強度に大きな差が現れる。したがって、オゾン濃度を高精度に測定することができることになる。
【0015】
また、同じオゾン濃度でもオゾン分子数は流通ガスの圧力に比例するため、オゾン濃度を正確に得るためには、紫外線吸収セル部分の絶対圧を正確に測定することが不可欠である。本発明では、オゾンガス流通路の絶対圧を計測し、その計測値を直接用い、または、オゾンガス流量に応じた補正を行うことで紫外線吸収セル部分での絶対圧を算出し、オゾン濃度を求めるように構成している。
【0016】
さらに、流通ガス流量が小さい場合、特に、100sccm以下では紫外線吸光セル部分で紫外線を照射された場合、紫外線の吸光と同時に、オゾン分解が発生するため、紫外線の吸光強度は実際のオゾン濃度よりも小さくなってしまう。そこで、予め、紫外線照射によるオゾン分解率とオゾンガス流量並びにオゾン濃度の関係を求めておき、オゾン濃度を補正する構成としている。
【0017】
また、オゾンガス流通路内のガス温度を直接計測することで、オゾン濃度を標準状態に換算できる。ただし、流通ガスが負圧で流量が小さい場合、紫外線吸光セル近傍のオゾンガス流路自体の温度自体を計測したほうが、オゾンガス自体の温度の計測点が紫外線吸光セルから離れる場合には、より正確な計測ができる。
【0018】
さらに、定期的な零点補正は、通常はガス流路を切り替えてオゾンを含まない空気や酸素などを供給した時の紫外線吸光強度をリファレンスとして補正を行っているが、本発明ではオゾンガス流通路の圧力を100Pa以下とすることで残存するオゾン分子量を非常に少なくすることで零点補正を行うことができる。
【0019】
一方、オゾン濃度の構成は、負圧のオゾンガスを密閉容器内に封入し電気火花などを用いてオゾンガスを完全に分解し、密閉容器の圧力上昇からオゾン濃度を求める爆発法を基準として行うことで、負圧下のオゾンガス濃度の校正も可能となる。
【0020】
【発明の実施の形態】
図1は本発明を適用したオゾンガス供給系での濃度測定システムの概略構成図であり、オゾンガス供給源(1)と真空ポンプ(4)との間に、オゾンガス濃度計測装置(2)が装着してある。また、オゾンガス濃度計測装置(2)を校正する場合には、爆発式オゾン濃度校正器(3)を、例えば、オゾンガス濃度計測装置(2)と真空ポンプ(4)に接続すると良い。
【0021】
オゾンガス濃度計測装置(2)は図2に示すように、内部にオゾンガス流通路(5)を形成しているケーシング(6)に紫外線透過窓(7)を形成し、この紫外線透過窓(7)部分に一対の紫外線透過ガラス(8)を50μm以上の間隔を持たせた状態で対向させて配置し、紫外線透過ガラス(8)間をオゾンガス流通路(5)に形成することで紫外線吸収セルに構成してある。そして、紫外線透過ガラス(8)で形成した紫外線透過窓(7)部分に、紫外線発光部(9)と紫外線受光部(10)とが紫外線透過ガラス(8)で形成したオゾンガス流通路(5)を挟んで対向する状態に配置してある。そして、オゾンガス濃度計測装置(2)は、そのオゾンガス流通路(5)における出口路部分を図1で示した爆発式オゾン濃度構成器(3)の代わりにオゾンガス消費装置(図示略)を介して前記真空ポンプ(4)に接続し、オゾンガス濃度計測装置(2)でガス濃度を計測されたオゾンガスをオゾンガス消費装置に供給するとよい。
【0022】
紫外線発光部(9)は、紫外線ランプ(11)と、紫外線ランプ電源(12)と、紫外線(30)を透過光(31)と反射光(32)に分割するハーフミラー(13)とで形成してある。そして、紫外線受光部(10a)での紫外線透過窓(7)を通過した反射光(32)の紫外線光量と紫外線受光部(10b)での透過光(31)の紫外線光量をオゾン濃度算出装置(14)に伝達するようにしてある。勿論、紫外線発光部(9)の構成により透過光(31)が紫外線透過窓(7)を通過する場合もある。
【0023】
オゾンガス濃度計測装置(2)での紫外線透過窓(7)の近傍部にオゾンガス流通路(5)内の圧力を検知する圧力センサー(15)とオゾンガス流通路(5)内を流れるオゾンガスの温度を検知する温度センサー(16a)とが配置してある。そして、この圧力センサー(15)で検出した圧力信号と温度センサー(16a)で検出した温度信号は、前記オゾン濃度算出装置(14)に入力されるようになっている。なお、オゾンガス流量が少ない場合には紫外線透過窓(7)の極近傍のケーシング(6)に取り付けた温度センサー(16b)を用いた方がオゾンガス温度を正確に計測できる。
【0024】
また、オゾンガス濃度計測装置(2)の紫外線透過窓(7)を形成している個所よりも下流側に位置するガス出口路(17)にマスフローコントローラ(18)が配置してある。なお、オゾンガス濃度計測装置(2)でのオゾンガス流通路(5)やオゾンガス供給路(19)の内面を高濃度(例えば15vol%以上)に濃縮処理したオゾンガスで不動態化処理しておくと、オゾンガス流通路(5)やオゾンガス供給路(19)の内面に酸化不動態膜が形成され、オゾンガスの自然分解や流路壁面との反応によりオゾンガスが分解消費されることを防止することができる。
図中符号(20)はオゾン濃度算出装置(14)で算出されたオゾンガス濃度の表示部である。
【0025】
オゾンガス供給源(1)としては、空気分離装置や酸素ガスシリンダ等の酸素源と、オゾン発生器及びオゾンガス濃縮装置等とで構成したオゾン製造ユニットや、高濃度オゾンガスを貯蔵したガスシリンダなどのガス貯蔵容器が考えられる。
【0026】
このように構成したオゾンガス濃度測定システムでは、負圧状態(100Pa〜50kPa)でオゾンガス供給路(19)を所定流量(100sccm)で流れているオゾンガスをオゾンガス濃度計測装置(4)に導入して測定した紫外線吸光強度をオゾン濃度算出装置(14)に入力し、オゾン濃度算出装置(14)では紫外線吸光強度を温度、圧力及びオゾン流量に基づいて補正して演算することにより、オゾンガス流通路(5)内を流れるオゾンガス濃度を計測して表示部(20)に表示するようになっている。この場合、オゾンガス流通路(5)のコンダクタンスとオゾンガス流通路(5)内を流れているガス流量とに基づいて紫外線吸収セル部分での絶対圧を補正している。また、オゾンガス流通路(5)内の圧力を100Pa(0.7Torr)以下の真空状態にして紫外線吸光強度を計測することにより、無オゾン状態での紫外線吸光強度を計測してゼロガス校正を行っている。
【0027】
ここで、測定対象ガス(オゾンガス)での紫外線吸光強度をI、標準ガス又は100Pa以下の真空状態での紫外線吸光強度をI、モル吸光係数をε[L/mol・cm]、測定光路長をd[cm]、オゾン濃度をC[mol/L]、測定対象ガスの圧力をP[kPa]、測定対象ガスの温度をT[K]、基準圧をP(101.3kPa)、基準温度をT(273K)とした場合、オゾン濃度と紫外線吸光強度との関係は次式で表すことができる。
【式1】

Figure 2004163293
【0028】
本発明では、負圧状態でオゾンガス濃度を測定するようにしていることから、高濃度のオゾンガスであっても、そのオゾン分子の数が少なく、オゾン濃度の僅かな変動に対しても紫外線吸光強度の変化が大きく表れることになるから、測定対象となっているオゾンガス濃度を高精度に測定することができることになる。
【0029】
本発明方法では、検出センサーであるオゾンガス濃度計測装置(2)、圧力センサー(15)、温度センサー(16a)(16b)、マスフローメータ(18)と、オゾン濃度算出装置(14)並びに表示部(20)を離して配置しておくことができ、また、複数の検出センサー部からの情報を1台のオゾン濃度算出装置(14)並びに表示部(20)で処理・表示することもできる。
【0030】
さらに、上記のオゾンガス濃度測定システムでは、オゾンガス濃度計測装置(2)のオゾンガス流通路(5)内を100Pa以下の超高真空状態にして紫外線吸光強度を計測することによりゼロガス校正を行っているが、オゾンガス濃度計測装置(2)のオゾンガス流通路(5)内に標準ガスを流して、ゼロガス校正を行うようにしても良い。
【0031】
オゾン濃度の校正を爆発式オゾン濃度校正器(3)を用いる場合、図1のように爆発式オゾン濃度校正器(3)にオゾン濃度計測装置(2)を通過したオゾンガスを直接導入しても良いし、三方弁(41)、バイパス(42)、三方弁(43)を通過させることでオゾンガス濃度計測装置(2)を軽油させることなく導入しても良い。
【0032】
爆発式オゾン濃度校正器(3)では導入したオゾンガスを三方弁(43)とバルブ(48)を封じ切って電源(47)より高電圧を供給して火花ギャップ(46)で火花を飛ばしてオゾンガスを爆発させて完全に分解させる。爆発前後の温度と圧力を温度センサー(44)と圧力センサー(45)で計測することでオゾン濃度が得られる。こうして得られたオゾン濃度でオゾンガス濃度計測装置(2)の校正を行うと良い。
【0033】
【発明の効果】
本発明では、測定対象となるオゾンガスを負圧の圧力条件で紫外線吸収式オゾン濃度計測装置の紫外線吸収セル内を流通させていることから、流通ガス中のオゾン分子の絶対数が少なく、僅かな濃度変化があっても、吸光強度に大きな差が現れる。したがって、計測対象ガス中のオゾンガス濃度を高精度に測定することができる。
【0034】
また、本発明では、オゾンガス濃度計測装置部分で検出した絶対圧力に基づき濃度を演算算出するようにしてあることから、圧力の影響が現れやすい負圧状態下での測定であっても計測対象ガス中のオゾンガス濃度を高精度に検出することができる。
【図面の簡単な説明】
【図1】本発明を適用したオゾンガス濃度測定システムの概略構成図である。
【図2】オゾンガス濃度計測装置の概略構成図である。[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for measuring the concentration of ozone gas, and in particular, a method and a method for measuring the concentration of high-concentration ozone gas obtained by operating an ozonizer at a very low flow rate or a high-concentration ozone gas obtained by concentrating the generated ozone. Equipment related.
[0002]
[Prior art]
Conventionally, an ultraviolet absorption method has been known as a method for measuring the concentration of ozone gas. In this method, ozone has a maximum absorption band near 254 nm in the ultraviolet region, and the absorption intensity of another gas is small in this 254 nm region, and the concentration is determined by using a standard gas (zero gas) containing no ozone. And the gas to be measured (sample gas) are individually flowed into the ultraviolet absorption cell of the ozone gas concentration meter, and the gas concentration of the gas to be measured is measured from the respective absorption intensities.
[0003]
[Patent Document 1]
JP-A-2000-19107 (paragraphs 0002 to 0004, FIG. 4)
[0004]
[Problems to be solved by the invention]
However, the conventional ultraviolet absorption type ozone gas concentration meter is formed for measuring the concentration of ozone gas having an ozone gas concentration of 10 vol% or less, and there is no device capable of measuring the concentration of a high concentration ozone gas having an ozone gas concentration of 15 vol% or more.
[0005]
Further, when the pressure of the ozone gas is high, for example, under the atmospheric pressure, the ultraviolet ray absorbing optical path, that is, when the ozone gas concentration exceeds 10 vol% even if the thickness of the ozone gas is reduced to 50 μm, most of the ultraviolet rays are absorbed by the ozone gas. , High-precision ozone concentration detection was not possible.
[0006]
Conventionally, even if ozone is generated by a high-capacity ozone generator using pure oxygen gas as a raw material, a normal operation method can only generate ozone gas having a concentration of about 10 vol%, and ozone gas having a high concentration of 15 vol% or more. It is thought that this was caused by the fact that was not put into practical use.
[0007]
In recent years, in the field of semiconductor manufacturing and the like, high-concentration ozone of 15 vol% or more has been demanded for use in applications such as oxide film manufacturing. In this case, since the concentration of the ozone gas has a great influence on the formation of the oxide film, an ozone gas concentration measurement technique capable of measuring the concentration of the high-concentration ozone gas with high accuracy and in-line is demanded.
[0008]
The present invention has been made in view of such a point, and provides a method and apparatus for measuring an ozone gas concentration capable of easily and accurately measuring the concentration of ozone gas even at a high concentration. With the goal.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, according to the present invention, the ozone gas flow passage is formed with an ultraviolet transmitting window having ultraviolet transmitting glass on both sides, an ultraviolet light emitting portion on one side, and an ultraviolet light transmitting portion on the other side. In the ozone gas concentration measurement method of measuring ozone concentration by arranging a light receiving unit and measuring the ultraviolet absorption intensity of ozone, a negative pressure ozone gas is caused to flow through the ozone gas flow passage, and the absolute pressure in the ozone gas flow passage is measured by ultraviolet light. It is characterized in that it is measured at the same time as the absorption intensity and the ozone concentration is determined from these measured values.
[0010]
According to the second aspect of the present invention, the pressure of the ozone gas flowing through the ozone gas flow passage is set to 100 Pa to 50 kPa. According to the third aspect of the invention, the flow rate of the ozone gas flowing through the ozone gas flow passage is reduced. The ozone gas concentration is determined by correcting the absolute pressure of the ultraviolet transmitting glass portion based on the measured and measured conductance of the gas passage and the measured flow rate of the ozone gas. The flow rate of the ozone gas flowing in the ozone gas flow passage is measured, and the ozone concentration is corrected based on the relationship between the ozone decomposition rate, the ozone gas flow rate, and the ozone concentration, which are decomposed by the irradiation of ultraviolet light generated when the light passes through the ultraviolet transmitting glass part. According to the fifth aspect of the present invention, the ozone flowing in the ozone gas flow passage is provided. The gas flow rate is set to 100 sccm or less, and the invention described in claim 6 measures at least one of the gas temperature in the ozone gas flow path and the temperature of the ozone gas flow path itself, and sets the ozone concentration to a standard state. The invention described in claim 7 is characterized in that the ozone gas flowing through the ozone gas flow passage is a high-concentration ozone gas having an ozone gas concentration of 15 vol% or more.
[0011]
Further, the invention according to claim 8 is characterized in that the zero point correction of the ozone gas concentration is performed by setting the absolute gas pressure in the ozone gas flow passage to 100 Pa or less. It is characterized in that ozone gas is completely decomposed by an electric spark or the like enclosed in a container, and the ozone concentration obtained from the pressure rise is used as a calibration value.
[0012]
According to a tenth aspect of the present invention, an ozone gas flow passage is formed on both sides thereof with an ultraviolet transmitting window formed of ultraviolet transmitting glass, an ultraviolet light emitting portion is arranged on one side thereof, and an ultraviolet light receiving portion is arranged on the other side. In an ozone gas concentration measuring device that measures ozone concentration by measuring ultraviolet absorption intensity, the outlet side of the ozone gas flow passage is evacuated with a vacuum pump, and a pressure sensor is disposed near the ultraviolet transmission window, so that an absolute The pressure is measured at the same time as the ultraviolet absorption intensity, and the measured values are transmitted to an ozone concentration calculator to determine the ozone concentration.
[0013]
According to an eleventh aspect of the present invention, the distance between the ultraviolet transmitting glasses forming the ultraviolet transmitting window is set to 50 μm or more. 14. The invention according to claim 13, wherein the flow rate is controlled and the ozone gas flow rate value is transmitted to an ozone gas concentration calculation unit to correct the ozone concentration. An ozone sensor is attached to at least one of the above and the ozone gas concentration is measured, and the measured value is transmitted to an ozone gas concentration calculation unit to correct the ozone concentration. The invention according to claim 14, wherein the ozone gas calculation unit In the system, the absolute pressure and temperature of the ozone gas in the UV transmission window are converted from the measurement values of the sensor, The relationship between the temperature and the ultraviolet light absorption intensity, the absolute pressure of the ozone gas, the temperature, the flow rate of the ozone gas, and the ozone decomposition rate by ultraviolet irradiation is defined. The invention according to claim 15, wherein the outlet of the ozone gas flow passage is 17. The invention according to claim 16, wherein the ozone gas whose concentration has been measured is directly connected to a vacuum tank for performing ozone treatment and is used for ozone treatment. The invention according to claim 17 is characterized in that an ultraviolet light transmitting window made of ultraviolet transmitting glass is formed on both surfaces of the ozone gas flow path, an ultraviolet light emitting portion is provided on one side, and an ultraviolet light emitting portion is provided on the other side. In the ozone gas concentration measurement device that measures the ozone concentration by arranging the ultraviolet ray receiving units and measuring the ultraviolet absorption intensity by ozone, the gas pressure in the gas passage is measured. It is characterized in that the pressure is set to 100 Pa or less and a zero gas composition of the ozone gas concentration is performed.
[0014]
Effect of the Invention
In the present invention, an object to be measured is placed in an ozone gas flow path (ultraviolet absorption cell) in which an ultraviolet light emitting portion is arranged on one side of an ultraviolet ray transmitting window having both surfaces made of ultraviolet ray transmitting glass and an ultraviolet ray receiving portion is arranged on the other side. Is circulated under negative pressure conditions. Thereby, the absolute amount of the number of ozone molecules in the flowing gas decreases, and especially when the ozone concentration becomes high, even if there is a slight concentration change, a large difference appears in the absorption intensity. Therefore, the ozone concentration can be measured with high accuracy.
[0015]
Also, even at the same ozone concentration, the number of ozone molecules is proportional to the pressure of the flowing gas. Therefore, in order to accurately obtain the ozone concentration, it is indispensable to accurately measure the absolute pressure of the ultraviolet absorbing cell part. In the present invention, the absolute pressure in the ultraviolet absorption cell portion is calculated by directly measuring the absolute pressure of the ozone gas flow passage and directly using the measured value, or by performing a correction according to the ozone gas flow rate, thereby obtaining the ozone concentration. It is composed.
[0016]
Further, when the flow rate of the flowing gas is small, particularly when the flow rate of the gas is less than 100 sccm, when the ultraviolet ray is irradiated in the ultraviolet ray absorption cell portion, ozone decomposition occurs simultaneously with the absorption of the ultraviolet ray. It will be smaller. Therefore, the relationship between the ozone decomposition rate due to ultraviolet irradiation, the ozone gas flow rate, and the ozone concentration is determined in advance, and the ozone concentration is corrected.
[0017]
Further, by directly measuring the gas temperature in the ozone gas flow passage, the ozone concentration can be converted to a standard state. However, when the flowing gas is negative pressure and the flow rate is small, it is better to measure the temperature itself of the ozone gas flow path itself near the ultraviolet absorption cell, and when the measurement point of the temperature of the ozone gas itself is far from the ultraviolet absorption cell, more accurate measurement is possible. Can measure.
[0018]
Furthermore, the periodic zero point correction is normally performed by switching the gas flow path and using the ultraviolet absorption intensity when air or oxygen containing no ozone is supplied as a reference, but in the present invention, the ozone gas flow path is corrected. By setting the pressure to 100 Pa or less, the zero point correction can be performed by making the residual ozone molecular weight extremely small.
[0019]
On the other hand, the composition of ozone concentration is based on the explosion method, in which negative pressure ozone gas is sealed in a closed container, the ozone gas is completely decomposed using an electric spark, etc., and the ozone concentration is determined from the pressure increase in the closed container. In addition, the ozone gas concentration under negative pressure can be calibrated.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a schematic configuration diagram of a concentration measurement system in an ozone gas supply system to which the present invention is applied. An ozone gas concentration measurement device (2) is mounted between an ozone gas supply source (1) and a vacuum pump (4). It is. When calibrating the ozone gas concentration measuring device (2), the explosion type ozone concentration calibrator (3) may be connected to, for example, the ozone gas concentration measuring device (2) and the vacuum pump (4).
[0021]
As shown in FIG. 2, the ozone gas concentration measuring device (2) forms an ultraviolet transmission window (7) in a casing (6) having an ozone gas flow passage (5) formed therein, and the ultraviolet transmission window (7). A pair of ultraviolet transmitting glasses (8) are arranged facing each other with a space of 50 μm or more at a portion thereof, and an ultraviolet absorbing cell is formed by forming an ozone gas flow path (5) between the ultraviolet transmitting glasses (8). It is composed. An ozone gas flow path (5) in which an ultraviolet light emitting portion (9) and an ultraviolet light receiving portion (10) are formed of an ultraviolet transmitting glass (8) is provided in an ultraviolet transmitting window (7) formed of an ultraviolet transmitting glass (8). Are arranged to face each other. The ozone gas concentration measuring device (2) uses an ozone gas consuming device (not shown) instead of the explosion type ozone concentration composing device (3) shown in FIG. The ozone gas whose gas concentration has been measured by the ozone gas concentration measuring device (2) may be connected to the vacuum pump (4) and supplied to the ozone gas consuming device.
[0022]
The ultraviolet light emitting section (9) is formed by an ultraviolet lamp (11), an ultraviolet lamp power supply (12), and a half mirror (13) for dividing the ultraviolet light (30) into transmitted light (31) and reflected light (32). I have. Then, the ozone concentration calculating device (10) calculates the amount of ultraviolet light of the reflected light (32) passing through the ultraviolet transmitting window (7) in the ultraviolet light receiving portion (10a) and the amount of ultraviolet light of the transmitted light (31) in the ultraviolet light receiving portion (10b). 14). Of course, depending on the configuration of the ultraviolet light emitting section (9), the transmitted light (31) may pass through the ultraviolet transmission window (7).
[0023]
A pressure sensor (15) for detecting the pressure in the ozone gas flow path (5) and a temperature of the ozone gas flowing in the ozone gas flow path (5) are provided near the ultraviolet transmission window (7) in the ozone gas concentration measurement device (2). A temperature sensor (16a) for detection is arranged. The pressure signal detected by the pressure sensor (15) and the temperature signal detected by the temperature sensor (16a) are input to the ozone concentration calculating device (14). When the flow rate of the ozone gas is small, the temperature of the ozone gas can be measured more accurately by using the temperature sensor (16b) attached to the casing (6) in the immediate vicinity of the ultraviolet transmission window (7).
[0024]
In addition, a mass flow controller (18) is disposed in a gas outlet path (17) located downstream of a position where the ultraviolet ray transmitting window (7) of the ozone gas concentration measuring device (2) is formed. If the ozone gas flow path (5) and the inner surface of the ozone gas supply path (19) in the ozone gas concentration measurement device (2) are passivated with ozone gas which has been concentrated to a high concentration (for example, 15 vol% or more), An oxidation passivation film is formed on the inner surfaces of the ozone gas flow path (5) and the ozone gas supply path (19), so that the ozone gas can be prevented from being decomposed and consumed by spontaneous decomposition of the ozone gas or reaction with the flow path wall surface.
Reference numeral (20) in the figure denotes a display section of the ozone gas concentration calculated by the ozone concentration calculating device (14).
[0025]
Examples of the ozone gas supply source (1) include an oxygen source such as an air separation device and an oxygen gas cylinder, an ozone production unit including an ozone generator and an ozone gas concentrator, and a gas cylinder such as a gas cylinder storing high-concentration ozone gas. Storage containers are conceivable.
[0026]
In the ozone gas concentration measurement system thus configured, the ozone gas flowing at a predetermined flow rate (100 sccm) through the ozone gas supply path (19) under a negative pressure state (100 Pa to 50 kPa) is introduced into the ozone gas concentration measurement device (4) for measurement. The obtained ultraviolet absorption intensity is input to the ozone concentration calculating device (14), and the ozone concentration calculating device (14) corrects and calculates the ultraviolet absorption intensity based on the temperature, the pressure, and the ozone flow rate, thereby obtaining the ozone gas flow path (5). The ozone gas concentration flowing in the parentheses is measured and displayed on the display unit (20). In this case, the absolute pressure in the ultraviolet absorbing cell portion is corrected based on the conductance of the ozone gas flow path (5) and the gas flow rate flowing in the ozone gas flow path (5). Further, the pressure in the ozone gas flow path (5) is set to a vacuum state of 100 Pa (0.7 Torr) or less, and the ultraviolet absorption intensity is measured. I have.
[0027]
Here, the ultraviolet light absorption intensity of the gas to be measured (ozone gas) is I, the ultraviolet light absorption intensity in a standard gas or a vacuum state of 100 Pa or less is I 0 , the molar extinction coefficient is ε [L / mol · cm], and the measurement optical path length Is d [cm], the ozone concentration is C [mol / L], the pressure of the gas to be measured is P [kPa], the temperature of the gas to be measured is T [K], the reference pressure is PN (101.3 kPa), and the reference. When the temperature is T N (273 K), the relationship between the ozone concentration and the ultraviolet absorption intensity can be expressed by the following equation.
(Equation 1)
Figure 2004163293
[0028]
In the present invention, since the ozone gas concentration is measured in a negative pressure state, even if the ozone gas has a high concentration, the number of the ozone molecules is small, and even if the ozone concentration is slightly changed, the ultraviolet absorption intensity is small. Changes, the ozone gas concentration to be measured can be measured with high accuracy.
[0029]
In the method of the present invention, the ozone gas concentration measurement device (2), the pressure sensor (15), the temperature sensors (16a) (16b), the mass flow meter (18), the ozone concentration calculation device (14), and the display unit ( 20) can be arranged separately, and information from a plurality of detection sensor units can be processed and displayed on one ozone concentration calculation device (14) and display unit (20).
[0030]
Furthermore, in the above-mentioned ozone gas concentration measurement system, zero gas calibration is performed by measuring the ultraviolet absorption intensity in an ultra-high vacuum state of 100 Pa or less in the ozone gas flow passage (5) of the ozone gas concentration measurement device (2). Alternatively, zero gas calibration may be performed by flowing a standard gas into the ozone gas flow path (5) of the ozone gas concentration measurement device (2).
[0031]
When the explosion-type ozone concentration calibrator (3) is used for the calibration of the ozone concentration, the ozone gas which has passed through the ozone concentration measurement device (2) is directly introduced into the explosion-type ozone concentration calibrator (3) as shown in FIG. Alternatively, the ozone gas concentration measurement device (2) may be introduced without passing light oil by passing through the three-way valve (41), the bypass (42), and the three-way valve (43).
[0032]
In the explosion-type ozone concentration calibrator (3), the introduced ozone gas is closed by closing the three-way valve (43) and the valve (48) and a high voltage is supplied from the power supply (47), and the spark is blown by the spark gap (46). To explode completely. By measuring the temperature and pressure before and after the explosion with the temperature sensor (44) and the pressure sensor (45), the ozone concentration can be obtained. It is preferable to calibrate the ozone gas concentration measuring device (2) with the ozone concentration thus obtained.
[0033]
【The invention's effect】
In the present invention, since the ozone gas to be measured is circulated in the ultraviolet absorption cell of the ultraviolet absorption type ozone concentration measuring device under a negative pressure condition, the absolute number of ozone molecules in the circulating gas is small and slight. Even if the concentration changes, a large difference appears in the absorption intensity. Therefore, the ozone gas concentration in the measurement target gas can be measured with high accuracy.
[0034]
Further, in the present invention, since the concentration is calculated and calculated based on the absolute pressure detected by the ozone gas concentration measuring device, even if the measurement is performed under a negative pressure state where the influence of the pressure is likely to appear, the gas to be measured can be measured. The concentration of ozone gas in the medium can be detected with high accuracy.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an ozone gas concentration measurement system to which the present invention is applied.
FIG. 2 is a schematic configuration diagram of an ozone gas concentration measurement device.

Claims (17)

オゾンガス流通路の両面に紫外線透過ガラスで構成した紫外線透過窓を配置し、その一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測方法において、
オゾンガス流通路に負圧のオゾンガスを流通させ、このオゾンガス流通路での絶対圧を紫外線吸光強度と同時に計測し、これらの計測値からオゾン濃度を求めるようにしたことを特徴とするオゾンガス濃度計測方法。
An ultraviolet transmitting window made of ultraviolet transmitting glass is arranged on both sides of the ozone gas flow passage, an ultraviolet light emitting part is arranged on one side, and an ultraviolet light receiving part is arranged on the other side, and the ultraviolet absorption intensity by ozone is measured. In the ozone gas concentration measurement method to measure the concentration,
A method for measuring ozone gas concentration, characterized in that ozone gas at a negative pressure is passed through an ozone gas flow passage, the absolute pressure in the ozone gas flow passage is measured simultaneously with the ultraviolet absorption intensity, and the ozone concentration is determined from these measured values. .
オゾンガス流通路内を流通させるオゾンガスの圧力が100Pa〜50kPaである請求項1に記載のオゾンガス濃度計測方法。The ozone gas concentration measurement method according to claim 1, wherein the pressure of the ozone gas flowing through the ozone gas flow passage is 100 Pa to 50 kPa. オゾンガス流通路内を流れるオゾンガス流量を計測し、その値と、絶対圧の計測点と紫外線透過窓の間のコンダクタンスから、絶対圧の計測値を紫外線透過ガラス部の絶対圧力に換算して、オゾンガス濃度を求めるようにした請求項1または2に記載のオゾンガス濃度計測方法。The ozone gas flow rate in the ozone gas flow passage is measured, and the measured value of the absolute pressure is converted into the absolute pressure of the ultraviolet ray transmitting glass part from the measured value and the conductance between the absolute pressure measurement point and the ultraviolet ray transmitting window. 3. The method for measuring ozone gas concentration according to claim 1, wherein the concentration is determined. オゾンガス流通路内を流れるオゾンガス流量を計測し、予め求めておいた紫外線透過ガラス部を通過する際に生じる紫外線照射により分解するオゾン分解率とオゾンガス流量並びにオゾン濃度の関係から請求項1から3のいずれかの方法で求めたオゾン濃度の補正を行うことを特徴とするオゾンガス濃度計測方法。The flow rate of ozone gas flowing through the ozone gas flow passage is measured, and the ozone decomposition rate, which is decomposed by ultraviolet irradiation generated when passing through the ultraviolet transmitting glass part, and the ozone gas flow rate and the ozone concentration are determined in advance. An ozone gas concentration measurement method, wherein the ozone concentration obtained by any one of the methods is corrected. オゾンガス流通路内を流れるオゾンガス流量を100sccm以下とした請求項1から4のいずれか1項に記載のオゾンガス濃度計測方法。The method for measuring the concentration of ozone gas according to any one of claims 1 to 4, wherein the flow rate of the ozone gas flowing in the ozone gas flow passage is set to 100 sccm or less. オゾンガス流通路内のガス温度とオゾンガス流路自体の温度との少なくとも一方を計測し、請求項1から5のいずれかの方法で求めたオゾン濃度を標準状態に換算することを特徴とするオゾンガス濃度計測方法。6. An ozone gas concentration characterized by measuring at least one of a gas temperature in an ozone gas flow passage and a temperature of an ozone gas flow passage itself, and converting an ozone concentration obtained by the method according to claim 1 into a standard state. Measurement method. オゾンガス流通路内を流通するオゾンガスが、オゾンガス濃度15vol %以上の高濃度オゾンガスである請求項1から6のいずれか1項に記載のオゾンガス濃度計測方法。The ozone gas concentration measuring method according to any one of claims 1 to 6, wherein the ozone gas flowing in the ozone gas flow passage is a high concentration ozone gas having an ozone gas concentration of 15 vol% or more. オゾンガス流通路内の絶対ガス圧を100Pa以下とすることでオゾンガス濃度の零点補正を行うことを特徴とする請求項1から7のいずれか1項に記載のオゾンガス濃度計測方法。The ozone gas concentration measuring method according to any one of claims 1 to 7, wherein zero point correction of the ozone gas concentration is performed by setting the absolute gas pressure in the ozone gas flow passage to 100 Pa or less. オゾンガスを密閉容器に封入し電気火花などでオゾンガスを完全に分解し、その圧力上昇から求めたオゾン濃度を校正値とすることを特徴とする請求項1から8のいずれか1項に記載のオゾンガス濃度計測方法。The ozone gas according to any one of claims 1 to 8, wherein the ozone gas is sealed in a closed container, the ozone gas is completely decomposed by an electric spark or the like, and the ozone concentration obtained from the pressure rise is used as a calibration value. Concentration measurement method. オゾンガス流通路に両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、
オゾンガス流通路の出口側を真空ポンプで排気するとともに紫外線透過窓近傍に圧力センサーを配して、オゾンガス流通路内の絶対圧を紫外線吸光強度と同時に計測し、これらの計測値をオゾン濃度算出部に伝達してオゾン濃度を求めることを特徴とするオゾンガス濃度計測装置。
In the ozone gas flow path, an ultraviolet transmitting window composed of ultraviolet transmitting glass on both sides is formed, an ultraviolet light emitting part is arranged on one side and an ultraviolet light receiving part is arranged on the other side, and the ozone concentration is measured by measuring the ultraviolet absorption intensity by ozone. In an ozone gas concentration measurement device that measures
The outlet side of the ozone gas flow passage is evacuated by a vacuum pump, and a pressure sensor is disposed near the ultraviolet transmission window to measure the absolute pressure in the ozone gas flow passage at the same time as the ultraviolet light absorption intensity. An ozone gas concentration measuring device characterized in that the ozone gas concentration is obtained by transmitting the ozone gas concentration to an ozone gas.
紫外線透過窓を構成している紫外線透過ガラスの間隔を50μm以上に構成した請求項10に記載のオゾンガス濃度計測装置。The ozone gas concentration measuring device according to claim 10, wherein the interval between the ultraviolet transmitting glasses forming the ultraviolet transmitting window is set to 50 µm or more. オゾンガス流通路を流れるオゾンガス流量を制御するとともにオゾンガス流量値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とする請求項10又は11に記載のオゾンガス濃度計測装置。12. The ozone gas concentration measuring device according to claim 10, wherein the ozone gas flow rate flowing through the ozone gas flow passage is controlled and the ozone gas flow rate value is transmitted to an ozone gas concentration calculation unit to correct the ozone concentration. オゾンガス流通路を構成している配管とオゾンガス流通路内との少なくとも一方にオゾンセンサーを取り付けてオゾンガスの濃度を計測し、その計測値をオゾンガス濃度算出部に伝達してオゾン濃度を補正することを特徴とする請求項10から12のいずれか1項に記載のオゾンガス濃度計測装置。An ozone sensor is attached to at least one of the piping constituting the ozone gas flow path and the inside of the ozone gas flow path to measure the concentration of ozone gas, and the measured value is transmitted to the ozone gas concentration calculation unit to correct the ozone concentration. The ozone gas concentration measuring device according to any one of claims 10 to 12, wherein: オゾンガス算出部では紫外線透過窓におけるオゾンガスの絶対圧、温度がセンサーの計測値から換算されると共に、オゾンガス濃度と紫外線吸光強度、オゾンガスの絶対圧、温度、オゾンガス流量、紫外線照射によるオゾン分解率との関係が定義されていることを特徴とする請求項10から13のいずれか1項に記載のオゾンガス濃度計測装置。The ozone gas calculation unit converts the absolute pressure and temperature of the ozone gas in the ultraviolet transmission window from the measurement values of the sensor, and calculates the ozone gas concentration and the ultraviolet absorption intensity, the absolute pressure of the ozone gas, the temperature, the ozone gas flow rate, and the ozone decomposition rate by ultraviolet irradiation. 14. The ozone gas concentration measuring device according to claim 10, wherein a relationship is defined. オゾンガス流通路の出口がオゾン処理をする真空槽に直接接続されており、濃度計測済みのオゾンガスをオゾン処理に使用するようにしたことを特徴とする請求項10から14のいずれか1項に記載のオゾンガス濃度計測装置。The outlet of the ozone gas flow passage is directly connected to a vacuum tank for performing ozone treatment, and the ozone gas whose concentration has been measured is used for the ozone treatment. Ozone gas concentration measurement device. オゾンガス流通路の内面を高濃度オゾンで不動態化処理してある請求項10から15のいずれか1項に記載のオゾンガス濃度計測装置。The ozone gas concentration measuring device according to any one of claims 10 to 15, wherein the inner surface of the ozone gas flow passage is passivated with high-concentration ozone. オゾンガス流通路の両面を紫外線透過ガラスで構成した紫外線透過窓を形成しその一側に紫外線発光部を、他側に紫外線受光部をそれぞれ配置し、オゾンによる紫外線吸光強度を計測することでオゾン濃度を計測するオゾンガス濃度計測装置において、
ガス通路内でのガス圧を100Pa以下に設定し、オゾンガス濃度のゼロガス校正を行うことを特徴とするオゾンガス濃度計測装置。
An ultraviolet transmitting window composed of ultraviolet transmitting glass is formed on both sides of the ozone gas flow passage, an ultraviolet light emitting part is arranged on one side and an ultraviolet light receiving part is arranged on the other side, and the ozone concentration is measured by measuring the ultraviolet absorption intensity by ozone. In an ozone gas concentration measurement device that measures
An ozone gas concentration measuring device, wherein a gas pressure in a gas passage is set to 100 Pa or less and zero gas calibration of an ozone gas concentration is performed.
JP2002330152A 2002-11-14 2002-11-14 Ozone gas concentration measuring method and ozone gas concentration measuring device Expired - Fee Related JP4009523B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002330152A JP4009523B2 (en) 2002-11-14 2002-11-14 Ozone gas concentration measuring method and ozone gas concentration measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002330152A JP4009523B2 (en) 2002-11-14 2002-11-14 Ozone gas concentration measuring method and ozone gas concentration measuring device

Publications (2)

Publication Number Publication Date
JP2004163293A true JP2004163293A (en) 2004-06-10
JP4009523B2 JP4009523B2 (en) 2007-11-14

Family

ID=32807910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002330152A Expired - Fee Related JP4009523B2 (en) 2002-11-14 2002-11-14 Ozone gas concentration measuring method and ozone gas concentration measuring device

Country Status (1)

Country Link
JP (1) JP4009523B2 (en)

Cited By (264)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006029836A (en) * 2004-07-13 2006-02-02 Horiba Ltd Gas analyzer and its calibration method
JP2008196882A (en) * 2007-02-09 2008-08-28 Taiyo Nippon Sanso Corp Gas analyzer
JP2009198497A (en) * 2008-01-23 2009-09-03 Taiyo Nippon Sanso Corp Indirect measuring method for ozone concentration
JP2009281943A (en) * 2008-05-23 2009-12-03 Meidensha Corp Ozone concentration measuring method and device therefor
JP2009281944A (en) * 2008-05-23 2009-12-03 Meidensha Corp Substrate temperature measuring method, device therefor, process control method, and system therefor
JP2010114314A (en) * 2008-11-07 2010-05-20 Tokyo Electron Ltd Method and system for measuring ozone gas concentration and substrate processing apparatus
JP2011094970A (en) * 2009-10-27 2011-05-12 Hikari Dento Kogyosho:Kk Device of measuring ozon concentration
JP2012132827A (en) * 2010-12-22 2012-07-12 Shunsuke Hosokawa Ozone concentration measurement method, ozone concentration measurement apparatus, ozone gas storage tank with ozone concentration measurement apparatus
US20140346650A1 (en) * 2009-08-14 2014-11-27 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
CN106872366A (en) * 2015-12-11 2017-06-20 新大陆科技集团有限公司 A kind of low concentration ozone concentration detector of single light source
CN109420186A (en) * 2017-08-22 2019-03-05 宁波方太厨具有限公司 Ozone disinfection cabinet and its ultraviolet ray intensity detection method
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11970766B2 (en) 2023-01-17 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122245A (en) * 1988-10-31 1990-05-09 Teru Yamanashi Kk Instrument for measuring concentration of ozone
JPH07318487A (en) * 1994-05-24 1995-12-08 Dairetsuku Kk Ozone concentration meter
JPH0933429A (en) * 1995-07-24 1997-02-07 Toshiba Corp Ozone densitometer
JP2002005826A (en) * 2000-06-20 2002-01-09 Kobe Steel Ltd Optical absorption-type ozone concentration meter
JP2004085407A (en) * 2002-08-28 2004-03-18 Meidensha Corp Ozone gas concentration measurement method and apparatus for the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122245A (en) * 1988-10-31 1990-05-09 Teru Yamanashi Kk Instrument for measuring concentration of ozone
JPH07318487A (en) * 1994-05-24 1995-12-08 Dairetsuku Kk Ozone concentration meter
JPH0933429A (en) * 1995-07-24 1997-02-07 Toshiba Corp Ozone densitometer
JP2002005826A (en) * 2000-06-20 2002-01-09 Kobe Steel Ltd Optical absorption-type ozone concentration meter
JP2004085407A (en) * 2002-08-28 2004-03-18 Meidensha Corp Ozone gas concentration measurement method and apparatus for the same

Cited By (322)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006029836A (en) * 2004-07-13 2006-02-02 Horiba Ltd Gas analyzer and its calibration method
JP2008196882A (en) * 2007-02-09 2008-08-28 Taiyo Nippon Sanso Corp Gas analyzer
JP2009198497A (en) * 2008-01-23 2009-09-03 Taiyo Nippon Sanso Corp Indirect measuring method for ozone concentration
JP2009281943A (en) * 2008-05-23 2009-12-03 Meidensha Corp Ozone concentration measuring method and device therefor
JP2009281944A (en) * 2008-05-23 2009-12-03 Meidensha Corp Substrate temperature measuring method, device therefor, process control method, and system therefor
JP2010114314A (en) * 2008-11-07 2010-05-20 Tokyo Electron Ltd Method and system for measuring ozone gas concentration and substrate processing apparatus
US8497132B2 (en) 2008-11-07 2013-07-30 Tokyo Electron Limited Ozone gas concentration measurement method, ozone gas concentration measurement system, and substrate processing apparatus
US10844486B2 (en) 2009-04-06 2020-11-24 Asm Ip Holding B.V. Semiconductor processing reactor and components thereof
US10804098B2 (en) 2009-08-14 2020-10-13 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US20140346650A1 (en) * 2009-08-14 2014-11-27 Asm Ip Holding B.V. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
JP2011094970A (en) * 2009-10-27 2011-05-12 Hikari Dento Kogyosho:Kk Device of measuring ozon concentration
JP2012132827A (en) * 2010-12-22 2012-07-12 Shunsuke Hosokawa Ozone concentration measurement method, ozone concentration measurement apparatus, ozone gas storage tank with ozone concentration measurement apparatus
US10707106B2 (en) 2011-06-06 2020-07-07 Asm Ip Holding B.V. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US10832903B2 (en) 2011-10-28 2020-11-10 Asm Ip Holding B.V. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10604847B2 (en) 2014-03-18 2020-03-31 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US10787741B2 (en) 2014-08-21 2020-09-29 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10561975B2 (en) 2014-10-07 2020-02-18 Asm Ip Holdings B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US11233133B2 (en) 2015-10-21 2022-01-25 Asm Ip Holding B.V. NbMC layers
CN106872366A (en) * 2015-12-11 2017-06-20 新大陆科技集团有限公司 A kind of low concentration ozone concentration detector of single light source
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10720322B2 (en) 2016-02-19 2020-07-21 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top surface
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10851456B2 (en) 2016-04-21 2020-12-01 Asm Ip Holding B.V. Deposition of metal borides
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10665452B2 (en) 2016-05-02 2020-05-26 Asm Ip Holdings B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10741385B2 (en) 2016-07-28 2020-08-11 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10943771B2 (en) 2016-10-26 2021-03-09 Asm Ip Holding B.V. Methods for thermally calibrating reaction chambers
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10720331B2 (en) 2016-11-01 2020-07-21 ASM IP Holdings, B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10644025B2 (en) 2016-11-07 2020-05-05 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US10622375B2 (en) 2016-11-07 2020-04-14 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US10934619B2 (en) 2016-11-15 2021-03-02 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10784102B2 (en) 2016-12-22 2020-09-22 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
US10714335B2 (en) 2017-04-25 2020-07-14 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10950432B2 (en) 2017-04-25 2021-03-16 Asm Ip Holding B.V. Method of depositing thin film and method of manufacturing semiconductor device
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
US10734497B2 (en) 2017-07-18 2020-08-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10672636B2 (en) 2017-08-09 2020-06-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
CN109420186B (en) * 2017-08-22 2023-10-20 宁波方太厨具有限公司 Ozone disinfection cabinet and ultraviolet light intensity detection method thereof
CN109420186A (en) * 2017-08-22 2019-03-05 宁波方太厨具有限公司 Ozone disinfection cabinet and its ultraviolet ray intensity detection method
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10928731B2 (en) 2017-09-21 2021-02-23 Asm Ip Holding B.V. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10734223B2 (en) 2017-10-10 2020-08-04 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US10734244B2 (en) 2017-11-16 2020-08-04 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD913980S1 (en) 2018-02-01 2021-03-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en) 2018-03-27 2020-11-24 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10867786B2 (en) 2018-03-30 2020-12-15 Asm Ip Holding B.V. Substrate processing method
US11469098B2 (en) 2018-05-08 2022-10-11 Asm Ip Holding B.V. Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11056567B2 (en) 2018-05-11 2021-07-06 Asm Ip Holding B.V. Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11296189B2 (en) 2018-06-21 2022-04-05 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10914004B2 (en) 2018-06-29 2021-02-09 Asm Ip Holding B.V. Thin-film deposition method and manufacturing method of semiconductor device
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11411088B2 (en) 2018-11-16 2022-08-09 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11972944B2 (en) 2022-10-21 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11970766B2 (en) 2023-01-17 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus

Also Published As

Publication number Publication date
JP4009523B2 (en) 2007-11-14

Similar Documents

Publication Publication Date Title
JP2004163293A (en) Method and apparatus for measuring ozone gas concentration
JP6041218B2 (en) Method and apparatus for measuring the permeability of a barrier material
CN104487844B (en) Measure method and the device of expiration alcohol concentration
US20100119439A1 (en) Ozone gas concentration measurement method, ozone gas concentration measurement system, and substrate processing apparatus
JP2010190751A (en) Gas permeability measuring device and gas permeability measuring method for film material
CN106290117B (en) Device and method for testing radiation induced gas permeation of material
KR102222130B1 (en) Cp₂Mg Concentration Measuring Device
JP5239053B2 (en) Method and apparatus for measuring ozone concentration
Boylan et al. Characterization and mitigation of water vapor effects in the measurement of ozone by chemiluminescence with nitric oxide
JP4266850B2 (en) Concentration measuring device for binary gas mixture
JP2007218816A (en) Nitrogen analyzer
US8925481B2 (en) Systems and methods for measuring, monitoring and controlling ozone concentration
CN114184566B (en) Sulfate radical concentration measurement model applicable to different temperatures based on ultraviolet absorption spectrometry and verification method thereof
CN212301412U (en) Calibration system based on nitric acid chemical ionization time-of-flight mass spectrometer
CN111929227B (en) Switching method, device, equipment and storage medium of infrared detection pool
WO2003078961A2 (en) Device for measuring gas concentration
CN207472823U (en) A kind of high life photoion gas detector
Torres et al. Performance characteristics of the electrochemical concentration cell ozonesonde
Zhu et al. Improvement of measurement accuracy of infrared moisture meter by considering the impact of moisture inside optical components
KR101571859B1 (en) Apparatus and method of analying element concentration using atomic absorption spectrophotometry
JPS63218842A (en) Method and apparatus for measuring concentration of ozone
JP2945050B2 (en) Method for determining performance degradation of zero gas generator in ozone concentration measurement device
JPH1019770A (en) Gas concentration measurement device
CN114216507B (en) OH free radical double-generation system for concentration calibration
CN107727731A (en) A kind of high life photoion gas detector

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050908

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070501

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070515

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070807

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070903

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100907

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4009523

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100907

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110907

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120907

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120907

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130907

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees