JP2003347394A - Divided electrostatic adsorption apparatus - Google Patents
Divided electrostatic adsorption apparatusInfo
- Publication number
- JP2003347394A JP2003347394A JP2002153644A JP2002153644A JP2003347394A JP 2003347394 A JP2003347394 A JP 2003347394A JP 2002153644 A JP2002153644 A JP 2002153644A JP 2002153644 A JP2002153644 A JP 2002153644A JP 2003347394 A JP2003347394 A JP 2003347394A
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- Prior art keywords
- electrostatic
- electrostatic attraction
- plate
- plates
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は静電吸着装置の技術
分野にかかり、特に、大型基板を静電吸着するのに適し
た静電吸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of electrostatic attraction devices, and more particularly to an electrostatic attraction device suitable for electrostatically attracting large substrates.
【０００２】[0002]
【従来の技術】近年の真空処理装置では、ガラス基板等
の基板を処理するために、絶縁性の処理基板を静電吸着
できる静電吸着装置が内部に配置されている。2. Description of the Related Art In a recent vacuum processing apparatus, an electrostatic chucking device capable of electrostatically holding an insulating processing substrate is disposed inside for processing a substrate such as a glass substrate.
【０００３】図７の符号１５０は、そのような真空処理
装置の一例であり、真空槽１５１の底面に配置された台
座１５４上に静電吸着装置１０１が取り付けられてい
る。[0003] Reference numeral 150 in FIG. 7 is an example of such a vacuum processing apparatus, in which the electrostatic suction device 101 is mounted on a pedestal 154 disposed on the bottom surface of a vacuum chamber 151.
【０００４】この静電吸着装置１０１の平面図を図８に
示し、そのＸ−Ｘ線截断面図を図９に示す。該静電吸着
装置１０１は、第１、第２の電極１１１、１１２が配置
された支持基板１１０を有している。FIG. 8 is a plan view of the electrostatic chuck 101, and FIG. 9 is a sectional view taken along line XX of FIG. The electrostatic chuck 101 has a support substrate 110 on which first and second electrodes 111 and 112 are arranged.
【０００５】第１、第２の電極１１１、１１２は櫛状に
パターニングされており、その櫛の歯の部分は一定距離
だけ離間して互いに噛み合わされている。The first and second electrodes 111 and 112 are patterned in a comb shape, and the teeth of the comb are engaged with each other at a predetermined distance.
【０００６】支持基板１１０は、グラファイト製の基材
１０２と、その表面に形成された窒化ホウ素から成る絶
縁膜１０３とを有しており、第１、第２の電極１１１、
１１２は、絶縁膜１０３上に配置され、基材１０２とは
絶縁されている。第１、第２の電極１１１、１１２の表
面には、絶縁性の保護膜１０５が形成されている。The support substrate 110 has a graphite base material 102 and an insulating film 103 made of boron nitride formed on the surface thereof.
112 is disposed on the insulating film 103 and is insulated from the base material 102. On the surfaces of the first and second electrodes 111 and 112, an insulating protective film 105 is formed.
【０００７】上記のような静電吸着装置１０１を用い、
スパッタリングプロセスを行う場合について説明する
と、真空槽１５１内を真空排気し、静電吸着装置１０１
上に処理対象基板１１８を配置し、電圧源１３１によっ
て、第１、第２の電極１１１、１１２間に電圧を印加す
る。[0007] Using the electrostatic chuck 101 as described above,
The case where the sputtering process is performed will be described.
A substrate to be processed 118 is disposed thereon, and a voltage is applied between the first and second electrodes 111 and 112 by a voltage source 131.
【０００８】この電圧によって第１、第２の電極間に電
界が形成され、絶縁性の処理対象基板１１８が静電吸着
装置１０１上に静電吸着される。An electric field is formed between the first and second electrodes by this voltage, and the insulating substrate to be processed 118 is electrostatically attracted onto the electrostatic attraction device 101.
【０００９】次いで、真空槽１５１内にアルゴンガスを
導入し、カソード電極１５２に負電圧又は交流電圧を印
加し、ターゲット１５３をスパッタリングすると、処理
対象基板１１８の表面にターゲット１５３の材料から成
る薄膜が形成される。Next, an argon gas is introduced into the vacuum chamber 151, a negative voltage or an AC voltage is applied to the cathode electrode 152, and the target 153 is sputtered, whereby a thin film made of the material of the target 153 is formed on the surface of the substrate 118 to be processed. It is formed.
【００１０】処理対象基板１１８が静電吸着装置１０１
上に静電吸着された状態では、処理対象基板１１８の裏
面と静電吸着装置１０１の表面とは密着しており、従っ
て、処理対象基板１１８と静電吸着装置１０１との間の
熱伝達性能が高くなっている。そのため、薄膜形成の際
に、台座１５４内に設けられたヒータを起動し、処理対
象基板１１８を一定温度に昇温させて膜質の良い薄膜を
成長させることができる。The substrate to be processed 118 is the electrostatic chuck 101
In the state of being electrostatically attracted to the upper side, the back surface of the processing target substrate 118 and the surface of the electrostatic suction device 101 are in close contact with each other, and therefore, the heat transfer performance between the processing target substrate 118 and the electrostatic suction device 101 Is high. Therefore, when forming a thin film, the heater provided in the pedestal 154 can be activated to raise the temperature of the processing target substrate 118 to a constant temperature and grow a thin film with good film quality.
【００１１】[0011]
【発明が解決しようとする課題】近年では上記のような
処理対象基板１１８が大型化し、それに伴って大型の静
電吸着装置１０１が求められている。他方、静電吸着装
置１０１には、基板１１８との密着性を高くするために
表面に高い平坦性が求められているが、支持基板１１０
はセラミックであるため、大型化すると焼成の際に歪み
や反り等が生じてしまい、低コストで大型且つ平坦な静
電吸着装置を得ることは困難である。In recent years, the size of the substrate 118 to be processed as described above has increased, and accordingly, a large-sized electrostatic chuck 101 has been required. On the other hand, the electrostatic attraction device 101 is required to have high flatness on the surface in order to enhance the adhesion to the substrate 118, but the supporting substrate 110
Since is a ceramic, it is difficult to obtain a large, flat and low-cost electrostatic attraction device at a low cost if the size is increased, causing distortion, warping, and the like during firing.
【００１２】また、導電性材料の薄膜から成る第１、第
２の電極を有しているため、静電吸着装置の表面を研磨
し、反りや歪みを矯正し、平坦にすることも困難であ
る。In addition, since the first and second electrodes made of a thin film of a conductive material are provided, it is difficult to polish the surface of the electrostatic attraction device, correct warpage and distortion, and make the surface flat. is there.
【００１３】本発明は上記要請に基いて創作されたもの
であり、その目的は、大型の処理機板を静電吸着できる
静電吸着装置を提供することにある。The present invention has been made based on the above-mentioned demands, and an object of the present invention is to provide an electrostatic attraction device capable of electrostatically attracting a large processing machine plate.
【００１４】[0014]
【課題を解決するための手段】上記課題を解決するため
に、請求項１記載の発明は、第１の電極と、前記第１の
電極と絶縁された第２の電極とが支持基板上に配置され
た静電吸着板を複数個と、前記各静電吸着板が取り付け
られる母板とを有し、前記母板には、前記第１の電極に
電気的に接続される第１の共通配線と、前記第１の共通
配線とは絶縁され、前記第２の電極に電気的に接続され
る第２の共通配線とが設けられ、前記第１の共通配線と
前記第２の共通配線の間に電圧を印加すると、前記各静
電吸着板上の前記第１の電極と前記第２の電極の間に電
圧が印加され、前記各静電吸着板に処理対象基板が静電
吸着されるように構成された分割型静電吸着装置であ
る。請求項２記載の発明は、前記各静電吸着板は、前記
母板に対して着脱可能に構成された請求項１記載の分割
型静電吸着装置である。請求項３記載の発明は、前記各
静電吸着板が有する端子と、前記母板が有する端子によ
り、前記第１、第２の電極と前記第１、第２の共通配線
とが電気的に接続されるように構成された請求項１又は
請求項２のいずれか１項記載の分割型静電吸着装置であ
る。According to a first aspect of the present invention, a first electrode and a second electrode insulated from the first electrode are provided on a supporting substrate. A first common electrode electrically connected to the first electrode, comprising: a plurality of arranged electrostatic suction plates; and a base plate to which each of the electrostatic suction plates is attached. A wiring and the first common wiring are insulated from each other, and a second common wiring electrically connected to the second electrode is provided, and the first common wiring and the second common wiring are connected to each other. When a voltage is applied therebetween, a voltage is applied between the first electrode and the second electrode on each of the electrostatic chucking plates, and the substrate to be processed is electrostatically sucked to each of the electrostatic chucking plates. It is a division | segmentation type electrostatic attraction apparatus comprised as mentioned above. The invention according to claim 2 is the split-type electrostatic attraction device according to claim 1, wherein each of the electrostatic attraction plates is configured to be detachable from the mother plate. According to a third aspect of the present invention, the first and second electrodes and the first and second common wirings are electrically connected to each other by the terminals of the electrostatic chucking plates and the terminals of the mother plate. The split-type electrostatic attraction device according to claim 1, wherein the electrostatic attraction device is configured to be connected.
【００１５】本発明は上記のように構成されており、一
台の母板に対し、複数個の静電吸着板が取り付けられる
ので、母板の大きさに比べると静電吸着板を小さくする
ことができる。The present invention is configured as described above, and since a plurality of electrostatic attraction plates are attached to one mother plate, the size of the electrostatic attraction plate is made smaller than the size of the mother plate. be able to.
【００１６】母板は大型であっても、その表面を研磨す
ることで平坦にすることが可能である。静電吸着板は、
小型であればその表面を平坦にすることが可能であるか
ら、平坦な母板に小型の静電吸着装置を複数個配置し、
各静電吸着板の表面の高さを揃えると、全体として表面
が平坦な静電吸着装置を得ることができる。Even if the mother plate is large, it can be flattened by polishing its surface. The electrostatic suction plate is
If it is small, its surface can be flat, so place a plurality of small electrostatic suction devices on a flat motherboard,
When the heights of the surfaces of the respective electrostatic chucking plates are made uniform, an electrostatic chuck having a flat surface as a whole can be obtained.
【００１７】その際、各静電吸着板を着脱可能にしてお
くと、故障があった静電吸着板を速やかに交換すること
ができる。At this time, if each electrostatic attraction plate is made detachable, the failed electrostatic attraction plate can be quickly replaced.
【００１８】また、静電吸着板と母板との電気的接続を
端子によって行えば、着脱操作が容易になる。Further, if the electrical connection between the electrostatic attraction plate and the mother plate is made by terminals, the attachment / detachment operation becomes easy.
【００１９】[0019]
【発明の実施の形態】図１の符号５０は、本発明の静電
吸着装置が用いられる真空処理装置の一例であり、接地
電位に接続された真空槽５１を有している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference numeral 50 in FIG. 1 is an example of a vacuum processing apparatus using the electrostatic suction device of the present invention, and has a vacuum chamber 51 connected to a ground potential.
【００２０】真空槽５１の底壁上には、台座５４を介し
て本発明の静電吸着装置１０が配置されている。On the bottom wall of the vacuum chamber 51, the electrostatic attraction device 10 of the present invention is disposed via a pedestal 54.
【００２１】図２は、この静電吸着装置１０の平面図で
ある。該静電吸着装置１０は、１枚の母板１１と、複数
の静電吸着板１２を有している。FIG. 2 is a plan view of the electrostatic suction device 10. The electrostatic attraction device 10 has one mother plate 11 and a plurality of electrostatic attraction plates 12.
【００２２】各静電吸着板１２は、母板１１に対して着
脱可能に構成されている。図３は、静電吸着板１２を取
り外した状態の母板１１の平面図を示しており、点線
は、静電吸着板１２を装着した場合の静電吸着板１２の
位置を示している。Each electrostatic suction plate 12 is configured to be detachable from the mother plate 11. FIG. 3 is a plan view of the mother board 11 in a state where the electrostatic attraction plate 12 is removed, and a dotted line indicates a position of the electrostatic attraction plate 12 when the electrostatic attraction plate 12 is mounted.
【００２３】各静電吸着板１２は、図４に示すように、
支持基板２０を有しており、支持基板２０上には、互い
に離間された第１、第２の電極２１ａ、２１ｂが配置さ
れている。第１、第２の電極２１ａ、２１ｂは、それぞ
れ櫛形にパターニングされており、その櫛形の歯の部分
は、互いに一定間隔を開けて噛み合わされている。As shown in FIG. 4, each electrostatic attraction plate 12
It has a support substrate 20, and on the support substrate 20, first and second electrodes 21a and 21b separated from each other are arranged. The first and second electrodes 21a and 21b are each patterned into a comb shape, and the teeth of the comb shape are engaged with each other at a certain interval.
【００２４】図５は、図４の静電吸着板１２のＡ−Ａ線
截断面図であり、図６は、Ｂ−Ｂ線截断面図及び静電吸
着板１２が装着されたときに、Ｂ−Ｂ線と同じ方向で截
断した場合の母板１１の截断面図である。FIG. 5 is a sectional view taken along line AA of the electrostatic suction plate 12 of FIG. 4. FIG. 6 is a sectional view taken along line BB of FIG. FIG. 4 is a cross-sectional view of the mother plate 11 when cut in the same direction as the line BB.
【００２５】静電吸着板１２の支持基板２０は、グラフ
ァイト等の基材２３表面に、ＰＢＮ(窒化ホウ素)等の絶
縁膜２４が成膜されて構成されており、第１、第２の電
極２１ａ、２１ｂは、絶縁膜２４の表面に形成され、基
材２３とは接触しないようになっている。また、この静
電吸着板１２では、第１、第２の電極２１ａ、２１ｂの
表面を覆うように、絶縁性の保護膜２５が形成され、耐
磨耗性が高められている。The support substrate 20 of the electrostatic attraction plate 12 has a structure in which an insulating film 24 such as PBN (boron nitride) is formed on the surface of a base material 23 such as graphite. 21 a and 21 b are formed on the surface of the insulating film 24 so as not to contact the base material 23. Further, in the electrostatic attraction plate 12, an insulating protective film 25 is formed so as to cover the surfaces of the first and second electrodes 21a and 21b, and the wear resistance is enhanced.
【００２６】また、支持基板２０の底面には、図６に示
されているように、第１、第２の突起状端子２６ａ、２
６ｂが突出して設けられている。As shown in FIG. 6, first and second projecting terminals 26a,
6b is provided so as to protrude.
【００２７】支持基板２０には貫通孔が穿設されてお
り、第１、第２の突起状端子２６ａ、２６ｂは、その貫
通孔内に配置された埋込配線２７によって、第１、第２
の電極２１ａ、２１ｂにそれぞれ接続されている。The support substrate 20 is provided with through-holes, and the first and second projecting terminals 26a, 26b are formed by embedded wires 27 arranged in the through-holes.
Are connected to the electrodes 21a and 21b, respectively.
【００２８】また埋込配線２７は絶縁スリーブなどによ
り基材２３とは電気的に絶縁されている。The buried wiring 27 is electrically insulated from the base material 23 by an insulating sleeve or the like.
【００２９】基材２３をＡｌ2Ｏ3などの絶縁物で構成す
れば、絶縁部材を省くことができて好都合である。If the base material 23 is made of an insulating material such as Al 2 O 3 , the insulating member can be advantageously omitted.
【００３０】母板１１は、絶縁物で構成された下板３１
と上板３２とが貼り合わされて構成されており、上板３
２には、複数の凹部３４が形成されている。The base plate 11 includes a lower plate 31 made of an insulating material.
And the upper plate 32 are bonded together.
2, a plurality of recesses 34 are formed.
【００３１】この凹部３４は、所定枚数の静電吸着板１
２を位置合わせして上板３２上に乗せたときに、各静電
吸着板１２の第１、第２の突起状端子２６ａ、２６ｂに
対応する位置に配置されており、各静電吸着板１２を母
板１１に装着する際に、第１、第２の突起状端子２６を
凹部３４に嵌入させると、静電吸着板１２は、支持基板
２０の底面が上板３２の表面に密着した状態で、母板１
１上に配置されるようになっている。The recess 34 is provided with a predetermined number of electrostatic attraction plates 1.
2 are positioned at positions corresponding to the first and second protruding terminals 26a, 26b of each electrostatic attraction plate 12 when they are placed on the upper plate 32 after being aligned. When the first and second protruding terminals 26 are fitted into the recesses 34 when the substrate 12 is mounted on the base plate 11, the bottom surface of the support substrate 20 of the electrostatic attraction plate 12 is in close contact with the surface of the upper plate 32. In the state, the mother plate 1
1.
【００３２】母板１１の表面は、反り、曲がり、歪みや
うねりがなく、平坦に形成されており、各静電吸着板１
２も一定厚みに形成されているため、複数の静電吸着板
１２を上板３２の表面に密着させた状態で配置すると、
各静電吸着板１２の表面は、上板３２の表面、即ち母板
１１の表面から同じ高さに位置するようになっている。The surface of the base plate 11 is formed flat without warpage, bending, distortion or undulation.
2 is also formed to a constant thickness, so that when a plurality of electrostatic suction plates 12 are arranged in close contact with the surface of the upper plate 32,
The surface of each electrostatic attraction plate 12 is located at the same height from the surface of the upper plate 32, that is, the surface of the mother plate 11.
【００３３】各静電吸着板１２の表面は平坦であり、各
静電吸着装置１２を母板１１に装着すると、全体として
平坦な表面を有する静電吸着装置１０が得られる。The surface of each electrostatic attraction plate 12 is flat. When each of the electrostatic attraction devices 12 is mounted on the base plate 11, the electrostatic attraction device 10 having a flat surface as a whole is obtained.
【００３４】凹部３４の底部には、第１、第２の内部端
子３６ａ、３６ｂが配置されており、静電吸着板１２が
母板１１に装着されると、第１、第２の突起状端子２６
ａ、２６ｂは、第１、第２の内部端子３６ａ、３６ｂに
接触し、第１、第２の突起状端子２６ａ、２６ｂと第
１、第２の内部端子３６ａ、３６ｂとが電気的に接続さ
れる。First and second internal terminals 36a and 36b are arranged at the bottom of the recess 34. When the electrostatic chucking plate 12 is mounted on the mother plate 11, the first and second protrusions are formed. Terminal 26
a, 26b contact the first and second internal terminals 36a, 36b, and electrically connect the first and second protruding terminals 26a, 26b to the first and second internal terminals 36a, 36b. Is done.
【００３５】下板３１内には、第１、第２の共通配線１
４ａ、１４ｂが引き回されており、第１、第２の共通配
線１４ａ、１４ｂと、第１、第２の内部端子３６ａ、３
６ｂとは、下板３１の貫通孔内に配置された埋込配線３
７によって接続されている。In the lower plate 31, the first and second common wirings 1 are provided.
4a and 14b are routed, and the first and second common wirings 14a and 14b and the first and second internal terminals 36a and 3b
6b is the embedded wiring 3 disposed in the through hole of the lower plate 31.
7 are connected.
【００３６】母板１１の側面には、図２および図３に示
すように、第１、第２の外部端子１５ａ、１５ｂが設け
られており、第１、第２の共通配線１４ａ、１４ｂは、
第１、第２の外部端子１５ａ、１５ｂにそれぞれ接続さ
れている。As shown in FIGS. 2 and 3, first and second external terminals 15a and 15b are provided on the side surface of the mother plate 11, and the first and second common wirings 14a and 14b are ,
They are connected to the first and second external terminals 15a and 15b, respectively.
【００３７】第１、第２の外部端子１５ａ、１５ｂは、
外部配線３２によって、真空槽５１の外部に配置された
電源３１に接続されている。この電源３１を動作させ、
第１の外部端子１５ａに正電圧を印加し、第２の外部端
子１５ｂに負電圧を印加すると、第１、第２の共通配線
１４ａ、１４ｂと、内部端子３６ａ、３６ｂと、突起状
端子２６ａと、埋込配線２７、３７とを介して、母板１
１に装着された全部の静電吸着板１２の第１、第２の電
極２１ａ、２１ｂに、正電圧と負電圧がそれぞれ印加さ
れる。The first and second external terminals 15a and 15b are
The external wiring 32 is connected to a power supply 31 arranged outside the vacuum chamber 51. By operating this power supply 31,
When a positive voltage is applied to the first external terminal 15a and a negative voltage is applied to the second external terminal 15b, the first and second common wirings 14a and 14b, the internal terminals 36a and 36b, and the protruding terminal 26a And mother board 1 via embedded wirings 27 and 37.
A positive voltage and a negative voltage are respectively applied to the first and second electrodes 21a and 21b of all the electrostatic chucking plates 12 mounted on the device.
【００３８】ここでは、母材１１には、第１、第２の共
通配線１４ａ、１４ｂが３組設けられており、１組の第
１、第２の共通配線１４ａ、１４ｂには、３個の静電吸
着板１２の第１、第２の電極２１ａ、２１ｂが接続され
るようになっている。Here, the base material 11 is provided with three sets of first and second common wirings 14a and 14b, and one set of first and second common wirings 14a and 14b has three sets. The first and second electrodes 21a and 21b of the electrostatic suction plate 12 are connected to each other.
【００３９】図１の真空処理装置５０はスパッタリング
装置であり、真空槽５１内部の天井側にはカソード電極
５２が配置されている。カソード電極５２の表面にはタ
ーゲット５３が取り付けられている。The vacuum processing apparatus 50 shown in FIG. 1 is a sputtering apparatus, and a cathode electrode 52 is disposed on the ceiling side inside a vacuum chamber 51. A target 53 is attached to the surface of the cathode electrode 52.
【００４０】真空槽５０には真空排気系５７が接続され
ており、該真空排気系５７によって真空槽５０内部を所
定圧力まで真空排気した後、真空槽５１内部の真空雰囲
気を維持しながら、処理対象基板を真空槽５１内に搬入
し、静電吸着装置１０上に配置する。A vacuum evacuation system 57 is connected to the vacuum chamber 50. After the inside of the vacuum chamber 50 is evacuated to a predetermined pressure by the vacuum evacuation system 57, processing is performed while maintaining the vacuum atmosphere inside the vacuum chamber 51. The target substrate is carried into the vacuum chamber 51 and placed on the electrostatic suction device 10.
【００４１】図１の符号１８はその状態の処理対象基板
を示しており、ガラス基板等の絶縁性材料で構成されて
いる。この処理対象基板１８の裏面は、母板１１上の複
数の静電吸着板１２の表面に接触している。Reference numeral 18 in FIG. 1 indicates a substrate to be processed in that state, and is made of an insulating material such as a glass substrate. The back surface of the processing target substrate 18 is in contact with the surfaces of the plurality of electrostatic attraction plates 12 on the mother plate 11.
【００４２】その状態から電源３１を起動し、全部の静
電吸着板１２の第１、第２の電極２１ａ、２１ｂに正電
圧と負電圧をそれぞれ印加すると、特に、各静電吸着板
１２の第１、第２の電極２１ａ、２１ｂのパターンの歯
の部分の表面近傍に強い電界が形成される。In this state, the power supply 31 is started, and a positive voltage and a negative voltage are applied to the first and second electrodes 21a and 21b of all the electrostatic attraction plates 12, respectively. A strong electric field is formed near the surface of the tooth portion of the pattern of the first and second electrodes 21a and 21b.
【００４３】絶縁性の処理対象基板１８はその電界の中
に位置しており、電界から力を受け、静電吸着板１２の
表面に静電吸着される。The insulating target substrate 18 is located in the electric field, receives a force from the electric field, and is electrostatically attracted to the surface of the electrostatic attraction plate 12.
【００４４】その状態でガス導入系５８からスパッタリ
ングガスを導入し、カソード電極５２に負電圧や交流電
圧を印加し、ターゲット５３をスパッタリングすると、
処理対象基板１８表面に薄膜が形成される。In this state, a sputtering gas is introduced from the gas introduction system 58, a negative voltage or an AC voltage is applied to the cathode electrode 52, and the target 53 is sputtered.
A thin film is formed on the surface of the processing target substrate 18.
【００４５】処理対象基板１８は、静電吸着力によって
静電吸着板装置１０の表面に密着しており、静電吸着装
置１０との熱伝達性能が高くなっている。従って、台座
５４内に設けられたヒータや冷却装置により、処理対象
基板１８を昇温又は冷却することが可能であり、温度制
御しながら薄膜を成長させ、膜質の良い薄膜を得ること
ができる。The substrate 18 to be processed is in close contact with the surface of the electrostatic attraction plate device 10 by the electrostatic attraction force, and the heat transfer performance with the electrostatic attraction device 10 is enhanced. Therefore, the temperature of the processing target substrate 18 can be raised or cooled by the heater or the cooling device provided in the pedestal 54, and the thin film can be grown while controlling the temperature, and a thin film with good film quality can be obtained.
【００４６】なお、以上は本発明の静電吸着装置１０
を、スパッタリングを行う真空処理装置５０に適用した
例を説明したが、本発明の静電吸着装置１０は、ＣＶＤ
装置や蒸着装置等の薄膜形成装置の他、ドライエッチン
グ装置にも用いることができる。The above is the description of the electrostatic chuck 10 of the present invention.
Was applied to the vacuum processing apparatus 50 for performing sputtering, but the electrostatic suction apparatus 10 of the present invention
The present invention can be used for a dry etching apparatus in addition to a thin film forming apparatus such as an apparatus and an evaporation apparatus.
【００４７】また、搬送ロボットのアーム先端に取り付
けると、大型の基板を複数の静電吸着板１２上に静電吸
着した状態で所望の場所に搬送することができる。Further, when the large-sized substrate is attached to the tip of the arm of the transfer robot, it can be transferred to a desired place in a state where the large-sized substrate is electrostatically adsorbed on the plurality of electrostatic attraction plates 12.
【００４８】上記実施例では、第１、第２の電極に正電
圧と負電圧を印加したが、極性は問わない。真空槽や他
の部材との間に放電が生じず、第１、第２の電極間に電
位差が生じて絶縁性の処理基板が静電吸着されればよ
い。In the above embodiment, a positive voltage and a negative voltage are applied to the first and second electrodes, but the polarity is not limited. It suffices that no discharge occurs between the vacuum chamber and other members, and a potential difference is generated between the first and second electrodes, so that the insulating processing substrate is electrostatically attracted.
【００４９】また、上記実施例では、静電吸着板１２に
突起状端子２６ａ、２６ｂを設け、母板１１にその突起
状の端子が嵌入する凹部３４を設けたが、静電吸着板１
２側に凹部を設け、母板１１側に突起状端子を設けて第
１、第２の電極と第１、第２の共通電極とを接続するよ
うにしてもよい。Further, in the above embodiment, the protruding terminals 26a and 26b are provided on the electrostatic attraction plate 12, and the recess 34 is provided on the mother plate 11 for fitting the protruding terminals.
The first and second electrodes may be connected to the first and second common electrodes by providing concave portions on the second side and providing protruding terminals on the mother plate 11 side.
【００５０】また、上記実施例では、１台の母板１１に
対して９台の静電吸着板１２を装着したが、本発明の静
電吸着装置には、１台の母板１１に対して２台以上８台
以下、又は１０台以上の静電吸着板１２を装着する静電
吸着装置が含まれる。In the above embodiment, nine electrostatic chucking plates 12 are mounted on one mother plate 11, but the electrostatic chucking device of the present invention employs one electrostatic chuck 12 for one mother plate 11. And at least two, at most eight, or at least ten electrostatic chucking plates 12 are included.
【００５１】また上記実施例では、静電吸着板１２の支
持基板２０をグラファイトとしたが、それに限るもので
はなく埋込配線との絶縁を確保する部材を伴なえば、Ａ
ｌ、ＳＵＳなどの金属でもよく、Ａｌ2Ｏ3、ＡｌＮ、Ｓ
ｉ3Ｎ4、サイアロンなどの絶縁性材料であれば、絶縁部
材を必要とせず好適である。In the above embodiment, the support substrate 20 of the electrostatic attraction plate 12 is made of graphite. However, the present invention is not limited to this.
1, metal such as SUS, Al 2 O 3 , AlN, S
Insulating materials such as i 3 N 4 and Sialon are suitable because they do not require an insulating member.
【００５２】また絶縁膜２４をＰ−ＢＮとしたが、シリ
コーンゴム、ポリイミドなどの高分子シートを貼りつけ
てもよく、さらにはＰＶＤやＣＶＤによる酸化膜、窒化
膜などの絶縁性膜でもよい。Although the insulating film 24 is made of P-BN, a polymer sheet such as silicone rubber or polyimide may be adhered, or an insulating film such as an oxide film or a nitride film formed by PVD or CVD may be used.
【００５３】[0053]
【発明の効果】大型基板の静電吸着に適している。The present invention is suitable for electrostatic adsorption of a large substrate.
【図１】本発明の静電吸着装置が用いられる真空処理装
置の一例FIG. 1 shows an example of a vacuum processing apparatus using the electrostatic suction device of the present invention.
【図２】静電吸着板と母板の位置関係を説明するための
平面図FIG. 2 is a plan view for explaining a positional relationship between an electrostatic suction plate and a mother plate;
【図３】母板の第１、第２の共通電極の配置パターンを
説明するための平面図FIG. 3 is a plan view for explaining an arrangement pattern of first and second common electrodes of a mother plate;
【図４】静電吸着板の第１、第の電極の配置パターンを
説明するための平面図FIG. 4 is a plan view for explaining an arrangement pattern of first and second electrodes of the electrostatic suction plate.
【図５】そのＡ−Ａ線截断面図FIG. 5 is a sectional view taken along line AA of FIG.
【図６】静電吸着板と母板の図４のＢ−Ｂ線に対応する
位置での截断面図FIG. 6 is a cross-sectional view of the electrostatic suction plate and the mother plate at a position corresponding to line BB in FIG. 4;
【図７】従来技術の静電吸着装置が配置された真空処理
装置FIG. 7 is a vacuum processing apparatus provided with a conventional electrostatic suction device.
【図８】従来技術の静電吸着装置の第１、第２の電極の
配置パターンを説明するための平面図FIG. 8 is a plan view for explaining an arrangement pattern of first and second electrodes of a conventional electrostatic attraction device.
【図９】そのＸ−Ｘ線截断面図FIG. 9 is a sectional view taken along line XX of FIG.
１０……静電吸着装置 １１……母板 １２……静電吸着板 １４ａ……第１の共通線 １４ｂ……第２の共通線 ２１ａ……第１の電極 ２１ｂ……第２の電極 ２０……支持基板 ２６ａ、２６ｂ……静電吸着板の端子 ３６ａ、３６ｂ……母板の端子 10 ... Electrostatic adsorption device 11 ... mother board 12 ... electrostatic attraction plate 14a: First common line 14b: second common line 21a: First electrode 21b... Second electrode 20 Support substrate 26a, 26b ... Terminal of electrostatic attraction plate 36a, 36b... Terminals of mother plate
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 5F031 CA05 GA09 GA32 GA33 HA02 HA03 HA18 HA19 HA37 HA38 MA29 ────────────────────────────────────────────────── ─── Continuation of front page F term (reference) 5F031 CA05 GA09 GA32 GA33 HA02 HA03 HA18 HA19 HA37 HA38 MA29
Claims (3)
た第２の電極とが支持基板上に配置された静電吸着板を
複数個と、 前記各静電吸着板が取り付けられる母板とを有し、 前記母板には、前記第１の電極に電気的に接続される第
１の共通配線と、 前記第１の共通配線とは絶縁され、前記第２の電極に電
気的に接続される第２の共通配線とが設けられ、前記第
１の共通配線と前記第２の共通配線の間に電圧を印加す
ると、前記各静電吸着板上の前記第１の電極と前記第２
の電極の間に電圧が印加され、前記各静電吸着板に処理
対象基板が静電吸着されるように構成された分割型静電
吸着装置。1. A plurality of electrostatic attraction plates each having a first electrode and a second electrode insulated from the first electrode disposed on a support substrate, and each of the electrostatic attraction plates is mounted. A first common wiring electrically connected to the first electrode, and the first common wiring is insulated from the second common electrode. A second common line electrically connected to the first common line and a voltage applied between the first common line and the second common line; And the second
A voltage is applied between the electrodes, and the substrate to be processed is electrostatically attracted to each of the electrostatic attracting plates.
脱可能に構成された請求項１記載の分割型静電吸着装
置。2. The split type electrostatic attraction device according to claim 1, wherein each of said electrostatic attraction plates is configured to be detachable from said mother plate.
板が有する端子により、前記第１、第２の電極と前記第
１、第２の共通配線とが電気的に接続されるように構成
された請求項１又は請求項２のいずれか１項記載の分割
型静電吸着装置。3. The first and second electrodes and the first and second common wires are electrically connected to each other by a terminal of each of the electrostatic chucking plates and a terminal of the mother plate. The split-type electrostatic attraction device according to claim 1, wherein the electrostatic attraction device is configured as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002153644A JP4030350B2 (en) | 2002-05-28 | 2002-05-28 | Split electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002153644A JP4030350B2 (en) | 2002-05-28 | 2002-05-28 | Split electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347394A true JP2003347394A (en) | 2003-12-05 |
| JP4030350B2 JP4030350B2 (en) | 2008-01-09 |
Family
ID=29770631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002153644A Expired - Fee Related JP4030350B2 (en) | 2002-05-28 | 2002-05-28 | Split electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4030350B2 (en) |
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