JP2000113850A - Substrate holding device - Google Patents
Substrate holding deviceInfo
- Publication number
- JP2000113850A JP2000113850A JP29619198A JP29619198A JP2000113850A JP 2000113850 A JP2000113850 A JP 2000113850A JP 29619198 A JP29619198 A JP 29619198A JP 29619198 A JP29619198 A JP 29619198A JP 2000113850 A JP2000113850 A JP 2000113850A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicone rubber
- electrostatic chuck
- insulating film
- electric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、例えばイオン注
入装置、イオンドーピング装置（非質量分離型のイオン
注入装置）、イオンビームエッチング装置等のように、
基板にイオンビームのような荷電粒子を照射して処理を
施す装置に用いられるものであって、基板を静電気によ
って吸着する静電チャックを備える基板保持装置に関
し、より具体的には、静電チャックからの基板の離脱性
を向上させる手段に関する。The present invention relates to an ion implantation apparatus, an ion doping apparatus (non-mass separation type ion implantation apparatus), an ion beam etching apparatus, etc.
The present invention relates to a substrate holding apparatus provided with an electrostatic chuck that irradiates a substrate with charged particles such as an ion beam and performs processing by irradiating the substrate with static electricity, and more specifically to an electrostatic chuck. And means for improving the detachability of the substrate from the substrate.
【０００２】[0002]
【従来の技術】この種の基板保持装置の従来例を図５に
示す。この基板保持装置は、基板（例えば半導体ウェー
ハ）４を静電気によって吸着する双極型の静電チャック
８と、この静電チャック８の二つの電極１２、１４に互
いに逆極性の直流電圧＋Ｖおよび−Ｖをそれぞれ印加す
るチャック電源１８とを備えている。静電チャック８は
通常は支持台１６に支持されている。支持台１６内には
通常は冷媒が通される。2. Description of the Related Art FIG. 5 shows a conventional example of this type of substrate holding apparatus. The substrate holding apparatus includes a bipolar electrostatic chuck 8 that attracts a substrate (eg, a semiconductor wafer) 4 by static electricity, and direct-current voltages + V and −V of opposite polarities to two electrodes 12 and 14 of the electrostatic chuck 8. And a chuck power supply 18 for applying the respective voltages. The electrostatic chuck 8 is normally supported on a support 16. Normally, a coolant is passed through the support 16.
【０００３】静電チャック８は、この例では、例えばア
ルミナ等のセラミックスから成る電気絶縁体１０中の表
面近くに、例えば共に半円形をした二つの電極１２、１
４が相対向して円形を成すように埋め込まれた構成をし
ている。In this example, the electrostatic chuck 8 is provided with two electrodes 12 and 1 having a semicircular shape, for example, near a surface in an electric insulator 10 made of ceramics such as alumina.
4 are embedded so as to face each other to form a circle.
【０００４】チャック電源１８は、この例では、上記直
流電圧＋Ｖを出力する正電源２０と、上記直流電圧−Ｖ
を出力する負電源２２から成る。In this example, a chuck power supply 18 includes a positive power supply 20 for outputting the DC voltage + V and a DC power supply -V
From the negative power supply 22.
【０００５】基板４を静電チャック８（具体的にはその
電気絶縁体１０）の表面に直接吸着したのでは、微視的
に見ると両者間の熱接触面積が小さくて熱接触効率（熱
伝達性能）が悪く、これを補うために、通常はこの例の
ように、基板４と静電チャック８との間に弾力性に富む
シリコーンゴム６を介在させ、かつ静電チャック８に印
加する電圧を高く設定して静電チャック８が発生する静
電気力（例えばクーロン力）を大きくし、これによって
基板４と静電チャック８との間の熱伝達性能を高めてい
る。When the substrate 4 is directly attracted to the surface of the electrostatic chuck 8 (specifically, the electrical insulator 10), the microscopically small thermal contact area between them causes the thermal contact efficiency (thermal In order to compensate for this, a silicone rubber 6 having high elasticity is interposed between the substrate 4 and the electrostatic chuck 8 and applied to the electrostatic chuck 8 to compensate for this. The voltage is set high to increase the electrostatic force (for example, Coulomb force) generated by the electrostatic chuck 8, thereby improving the heat transfer performance between the substrate 4 and the electrostatic chuck 8.
【０００６】チャック電源１８から静電チャック８に上
記直流電圧を印加すると、基板４と電極１２、１４間に
正負の電荷が溜まり、その間に働く静電気力によって基
板４が静電チャック８に吸着され保持される。その状態
で、基板４に例えばイオンビーム２を照射してイオン注
入等の処理を施すことができる。イオンビーム２の照射
に伴って基板４内に発生する熱は、シリコーンゴム６を
介して静電チャック８ひいては支持台１６に伝達され、
これによって基板４が冷却され、その温度上昇が抑えら
れる。When the DC voltage is applied from the chuck power supply 18 to the electrostatic chuck 8, positive and negative charges accumulate between the substrate 4 and the electrodes 12, 14, and the substrate 4 is attracted to the electrostatic chuck 8 by the electrostatic force acting between them. Will be retained. In this state, the substrate 4 can be irradiated with, for example, the ion beam 2 to perform a process such as ion implantation. The heat generated in the substrate 4 due to the irradiation of the ion beam 2 is transmitted to the electrostatic chuck 8 and further to the support 16 via the silicone rubber 6,
Thereby, the substrate 4 is cooled and its temperature rise is suppressed.
【０００７】基板４の処理後は、チャック電源１８から
静電チャック８に印加する上記電圧を切った後、昇降機
構２４によって基板４を持ち上げて静電チャック８から
（具体的にはその表面に設けたシリコーンゴム６から）
離脱させる。この一連の操作は、制御装置２６による制
御下で行われる。After the substrate 4 is processed, the voltage applied from the chuck power supply 18 to the electrostatic chuck 8 is turned off, and then the substrate 4 is lifted by the elevating mechanism 24 to be lifted from the electrostatic chuck 8 (specifically, the (From the provided silicone rubber 6)
Let go. This series of operations is performed under the control of the control device 26.
【０００８】[0008]
【発明が解決しようとする課題】上記のようにシリコー
ンゴム６を介在させ、かつ静電チャック８に印加する電
圧を高く設定することによって、基板４と静電チャック
８との間の熱伝達性能が向上し、基板４の温度上昇を効
果的に抑えることはできるけれども、吸着後に基板４を
離脱させる（取り外す）ときに、その離脱を短時間でス
ムーズに行うことができず、基板４の離脱性が悪いとい
う課題がある。これは、基板４の吸着時にシリコーンゴ
ム６の表面状態が時間経過に伴って基板４の裏面に馴染
んで行き、両者の接触面積が次第に増加して密着度が大
きくなり、それによって離脱時に基板４がシリコーンゴ
ム６から剥がれにくくなるからである。As described above, the heat transfer performance between the substrate 4 and the electrostatic chuck 8 can be improved by interposing the silicone rubber 6 and setting the voltage applied to the electrostatic chuck 8 high. Although the temperature rise of the substrate 4 can be effectively suppressed, when the substrate 4 is released (removed) after the suction, the release cannot be performed smoothly in a short time, and the substrate 4 is released. There is a problem that sex is poor. This is because the surface state of the silicone rubber 6 is adapted to the back surface of the substrate 4 with the passage of time when the substrate 4 is adsorbed, and the contact area between the two gradually increases to increase the degree of adhesion. Is less likely to be peeled off from the silicone rubber 6.
【０００９】そこでこの発明は、基板と静電チャックと
の間の熱伝達性能を低下させずに、基板の離脱性を向上
させることを主たる目的とする。Accordingly, an object of the present invention is to improve the detachability of a substrate without deteriorating the heat transfer performance between the substrate and the electrostatic chuck.
【００１０】[0010]
【課題を解決するための手段】この発明に係る第１の基
板保持装置は、前記静電チャックの電気絶縁体をシリコ
ーンゴムで構成し、かつこの電気絶縁体の表面にシリコ
ーンゴムよりも離型性の良い電気絶縁性膜を形成してい
ることを特徴としている。According to a first substrate holding apparatus of the present invention, an electric insulator of the electrostatic chuck is formed of silicone rubber, and a surface of the electric insulator is separated from the silicone rubber. It is characterized in that an electrically insulating film having good properties is formed.
【００１１】この発明に係る第２の基板保持装置は、前
記静電チャックの電気絶縁体をセラミックスで構成し、
この電気絶縁体上にシリコーンゴムを設け、かつこのシ
リコーンゴムの表面にシリコーンゴムよりも離型性の良
い電気絶縁性膜を形成していることを特徴としている。In a second substrate holding apparatus according to the present invention, the electric insulator of the electrostatic chuck is made of ceramics,
It is characterized in that a silicone rubber is provided on the electrical insulator, and an electrical insulating film having better releasability than the silicone rubber is formed on the surface of the silicone rubber.
【００１２】上記構成によれば、シリコーンゴムの表面
にシリコーンゴムよりも離型性の良い電気絶縁性膜を形
成しているので、離脱時に基板を剥がしやすくなり、基
板の離脱性が向上する。その結果、離脱時に基板を短時
間でかつスムーズに離脱させることができる。従って、
装置のスループットも向上する。According to the above configuration, since the electrical insulating film having better releasability than the silicone rubber is formed on the surface of the silicone rubber, the substrate can be easily peeled at the time of detachment, and the detachability of the substrate is improved. As a result, the substrate can be detached smoothly in a short time at the time of detachment. Therefore,
The throughput of the device is also improved.
【００１３】しかも、上記電気絶縁性膜を弾力性に富む
シリコーンゴムの表面に形成しており、かつ上記電気絶
縁性膜は膜状であってシリコーンゴムの変形に応じて変
形するので、基板の吸着時にこれらシリコーンゴムおよ
び電気絶縁性膜は基板の裏面にうまく馴染み、熱接触面
積を大きく取ることができる。従って、基板と静電チャ
ックとの間の熱伝達性能を低下させずに済む。In addition, the electric insulating film is formed on the surface of the silicone rubber having high elasticity, and the electric insulating film is in the form of a film and is deformed according to the deformation of the silicone rubber. At the time of adsorption, the silicone rubber and the electrically insulating film are well adapted to the back surface of the substrate, and can have a large thermal contact area. Therefore, the heat transfer performance between the substrate and the electrostatic chuck does not need to be reduced.
【００１４】[0014]
【発明の実施の形態】図１は、この発明に係る基板保持
装置の一例を示す図である。図５の従来例と同一または
相当する部分には同一符号を付し、以下においては当該
従来例との相違点を主に説明する。FIG. 1 is a diagram showing an example of a substrate holding device according to the present invention. Parts that are the same as or correspond to those in the conventional example of FIG. 5 are denoted by the same reference numerals, and differences from the conventional example will be mainly described below.
【００１５】この実施例においては、前述した静電チャ
ック８の電気絶縁体１０をシリコーンゴムで構成してい
る。即ち、シリコーンゴムの中に上記電極１２、１４を
埋め込んでいる。そしてこの電気絶縁体１０の表面（基
板４が接触する側の表面）に、シリコーンゴムよりも離
型性の良い電気絶縁性膜３０を形成し、この電気絶縁性
膜３０で電気絶縁体１０の上記表面を覆っている。この
膜３０を電気絶縁性としているのは、そうしないと静電
気力によって基板４を吸着することができなくなるから
である。In this embodiment, the electric insulator 10 of the electrostatic chuck 8 is made of silicone rubber. That is, the electrodes 12 and 14 are embedded in silicone rubber. Then, an electric insulating film 30 having better releasability than silicone rubber is formed on the surface of the electric insulator 10 (the surface on the side where the substrate 4 contacts), and the electric insulating film 30 Covers the surface. The reason for making the film 30 electrically insulating is that otherwise, the substrate 4 cannot be attracted by electrostatic force.
【００１６】上記電気絶縁性膜３０は、例えば、ダイヤ
モンド状カーボン（ＤＬＣ）、フッ素樹脂、またはポリ
イミド樹脂から成る。ダイヤモンド状カーボンは、ダイ
ヤモンドに次ぐ硬度を有していて耐摩耗性に優れている
ので、より好ましい。The electrically insulating film 30 is made of, for example, diamond-like carbon (DLC), fluororesin, or polyimide resin. Diamond-like carbon is more preferred because it has the second highest hardness next to diamond and is excellent in wear resistance.
【００１７】上記電気絶縁性膜３０の膜厚は、あまり厚
いと変形性が悪化し、あまり薄いと均一に形成するのが
困難になるので、０．０５μｍ〜５μｍ程度が好まし
く、その内でも０．１μｍ〜１μｍ程度がより好まし
い。If the thickness of the electric insulating film 30 is too large, the deformability deteriorates, and if it is too thin, it becomes difficult to form a uniform film. About 1 μm to 1 μm is more preferable.
【００１８】上記電気絶縁性膜３０は、例えば、プラズ
マＣＶＤ法に代表されるＣＶＤ法、スパッタリング法に
代表されるＰＶＤ法、または塗布等によって形成するこ
とができる。The electric insulating film 30 can be formed by, for example, a CVD method typified by a plasma CVD method, a PVD method typified by a sputtering method, or coating.
【００１９】上記基板保持装置によれば、シリコーンゴ
ムから成る電気絶縁体１０の表面にシリコーンゴムより
も離型性の良い電気絶縁性膜３０を形成しているので、
離脱時に基板４を静電チャック８から剥がしやすくな
り、基板４の離脱性が向上する。その結果、離脱時に基
板４に割れ等を発生させることなく基板４を短時間でか
つスムーズに離脱させることができる。従って、装置の
スループットも向上する。According to the above substrate holding device, since the electric insulating film 30 having better releasability than silicone rubber is formed on the surface of the electric insulator 10 made of silicone rubber,
At the time of separation, the substrate 4 is easily peeled off from the electrostatic chuck 8, and the separation property of the substrate 4 is improved. As a result, the substrate 4 can be separated smoothly in a short time without causing cracks or the like in the substrate 4 at the time of separation. Therefore, the throughput of the apparatus is also improved.
【００２０】しかも、上記電気絶縁性膜３０を弾力性に
富むシリコーンゴム（電気絶縁体１０）の表面に形成し
ており、かつ上記電気絶縁性膜３０は薄い膜状であって
シリコーンゴムの変形に応じて変形するので、基板４の
吸着時にこれらシリコーンゴム１０および電気絶縁性膜
３０は基板４の裏面にうまく馴染み、熱接触面積を大き
く取ることができる。従って、基板４と静電チャック８
との間の熱伝達性能を低下させずに済む。例えば、静電
チャック８に印加する電圧を上記従来例と同じにした場
合、上記従来例と同等の熱伝達性能、即ち基板冷却性能
が得られる。Moreover, the electric insulating film 30 is formed on the surface of silicone rubber (electric insulator 10) having high elasticity, and the electric insulating film 30 has a thin film shape and is deformed by the silicone rubber. Therefore, when the substrate 4 is adsorbed, the silicone rubber 10 and the electrically insulating film 30 are well adapted to the back surface of the substrate 4 and a large thermal contact area can be obtained. Therefore, the substrate 4 and the electrostatic chuck 8
And the heat transfer performance between them is not reduced. For example, when the voltage applied to the electrostatic chuck 8 is the same as that of the conventional example, heat transfer performance equivalent to that of the conventional example, that is, substrate cooling performance can be obtained.
【００２１】次に他の実施例を、上記実施例との相違点
を主体に説明する。Next, another embodiment will be described mainly on differences from the above embodiment.
【００２２】図２の基板保持装置は、静電チャック８の
電気絶縁体１０を従来例と同様にアルミナ（Ａｌ
2Ｏ3 ）等のセラミックスで構成し、この電気絶縁体１
０上に従来例と同様にシリコーンゴム６を設け、かつこ
のシリコーンゴム６の表面にシリコーンゴムよりも離型
性の良い電気絶縁性膜３０を形成している。In the substrate holding apparatus shown in FIG. 2, the electric insulator 10 of the electrostatic chuck 8 is made of alumina (Al
This electrical insulator 1 is made of ceramics such as 2 O 3 ).
A silicone rubber 6 is provided on the same as the conventional example, and an electrical insulating film 30 having better releasability than silicone rubber is formed on the surface of the silicone rubber 6.
【００２３】この電気絶縁性膜３０の好ましい材質、膜
厚、形成方法等は、図１の例の場合と同様である。The preferred material, film thickness, forming method and the like of the electrically insulating film 30 are the same as those in the example of FIG.
【００２４】この図２の例の場合も、電気絶縁性膜３０
によって基板４の離脱性が向上すると共に、この電気絶
縁性膜３０を弾力性に富むシリコーンゴム６の表面に形
成しているので、基板４との熱接触面積を大きく取るこ
とができ、基板４と静電チャック８との間の熱伝達性能
を低下させずに済む。Also in the case of the example shown in FIG.
By this, the releasability of the substrate 4 is improved, and since the electrically insulating film 30 is formed on the surface of the silicone rubber 6 having high elasticity, a large thermal contact area with the substrate 4 can be obtained. The heat transfer performance between the electrostatic chuck 8 and the electrostatic chuck 8 does not need to be reduced.
【００２５】図３および図４の例は、それぞれ、図１お
よび図２の例の静電チャック８等の表面を、球面の一部
のような凸状にしたものである。即ち、静電チャック８
等の表面にわずかに曲率を持たせたものである。FIGS. 3 and 4 show examples in which the surface of the electrostatic chuck 8 and the like in the examples shown in FIGS. 1 and 2 are made convex like a part of a spherical surface. That is, the electrostatic chuck 8
Etc. have a slightly curved surface.
【００２６】このようにすれば、静電チャック８に印加
する電圧を切ったときに基板４が自力で平らに戻る力を
利用して基板４を離脱させることができるので、基板４
をより少ない力でより簡単に離脱させることができる。With this configuration, when the voltage applied to the electrostatic chuck 8 is cut off, the substrate 4 can be released using the force of returning the substrate 4 to a flat surface by itself.
Can be more easily disengaged with less force.
【００２７】[0027]
【発明の効果】この発明は、上記のとおり構成されてい
るので、次のような効果を奏する。Since the present invention is configured as described above, it has the following effects.
【００２８】請求項１記載の発明によれば、シリコーン
ゴムから成る電気絶縁体の表面にシリコーンゴムよりも
離型性の良い電気絶縁性膜を形成しているので、基板の
離脱性が向上する。その結果、離脱時に基板を短時間で
かつスムーズに離脱させることができ、装置のスループ
ットも向上する。According to the first aspect of the present invention, since the electrical insulating film having better releasability than the silicone rubber is formed on the surface of the electrical insulator made of silicone rubber, the releasability of the substrate is improved. . As a result, the substrate can be released smoothly in a short time at the time of release, and the throughput of the apparatus is also improved.
【００２９】しかも、基板の吸着時にシリコーンゴムか
ら成る電気絶縁体およびその表面の電気絶縁性膜は基板
の裏面にうまく馴染み、熱接触面積を大きく取ることが
できるので、基板と静電チャックとの間の熱伝達性能を
低下させずに済む。In addition, the electric insulator made of silicone rubber and the electric insulating film on the surface of the electric insulator are well adapted to the back surface of the substrate when the substrate is adsorbed, and a large thermal contact area can be obtained. The heat transfer performance between them does not need to be reduced.
【００３０】請求項２記載の発明によれば、シリコーン
ゴムの表面にシリコーンゴムよりも離型性の良い電気絶
縁性膜を形成しているので、基板の離脱性が向上する。
その結果、離脱時に基板を短時間でかつスムーズに離脱
させることができ、装置のスループットも向上する。According to the second aspect of the present invention, since the electrically insulating film having better releasability than the silicone rubber is formed on the surface of the silicone rubber, the releasability of the substrate is improved.
As a result, the substrate can be released smoothly in a short time at the time of release, and the throughput of the apparatus is also improved.
【００３１】しかも、基板の吸着時にシリコーンゴムお
よびその表面の電気絶縁性膜は基板の裏面にうまく馴染
み、熱接触面積を大きく取ることができるので、基板と
静電チャックとの間の熱伝達性能を低下させずに済む。In addition, when the substrate is adsorbed, the silicone rubber and the electrically insulating film on the surface of the silicone rubber are well adapted to the back surface of the substrate, and a large thermal contact area can be obtained, so that the heat transfer performance between the substrate and the electrostatic chuck can be increased. Does not need to be reduced.
【００３２】請求項３記載の発明によれば、ダイヤモン
ド状カーボンは耐摩耗性に優れているので、より長期間
に亘り安定した性能を維持することができる。According to the third aspect of the present invention, since the diamond-like carbon has excellent wear resistance, stable performance can be maintained for a longer period.
【図１】この発明に係る基板保持装置の一例を示す図で
ある。FIG. 1 is a diagram showing an example of a substrate holding device according to the present invention.
【図２】この発明に係る基板保持装置の他の例を示す図
である。FIG. 2 is a diagram showing another example of the substrate holding device according to the present invention.
【図３】この発明に係る基板保持装置の他の例を示す図
である。FIG. 3 is a diagram showing another example of the substrate holding device according to the present invention.
【図４】この発明に係る基板保持装置の他の例を示す図
である。FIG. 4 is a diagram showing another example of the substrate holding device according to the present invention.
【図５】従来の基板保持装置の一例を示す図である。FIG. 5 is a diagram showing an example of a conventional substrate holding device.
４ 基板 ６ シリコーンゴム ８ 静電チャック １０ 電気絶縁体 １２、１４ 電極 １８ チャック電源 ３０ 電気絶縁性膜 Reference Signs List 4 substrate 6 silicone rubber 8 electrostatic chuck 10 electric insulator 12, 14 electrode 18 chuck power supply 30 electric insulating film
Claims (3)
極を有していて基板を静電気によって吸着する静電チャ
ックを備える基板保持装置において、前記静電チャック
の電気絶縁体をシリコーンゴムで構成し、かつこの電気
絶縁体の表面にシリコーンゴムよりも離型性の良い電気
絶縁性膜を形成していることを特徴とする基板保持装
置。1. A substrate holding apparatus having an electrostatic chuck that has an electrode embedded near a surface in an electric insulator and attracts a substrate by static electricity, wherein the electric insulator of the electrostatic chuck is made of silicone rubber. A substrate holding device, wherein an electric insulating film having better releasability than silicone rubber is formed on the surface of the electric insulator.
極を有していて基板を静電気によって吸着する静電チャ
ックを備える基板保持装置において、前記静電チャック
の電気絶縁体をセラミックスで構成し、この電気絶縁体
上にシリコーンゴムを設け、かつこのシリコーンゴムの
表面にシリコーンゴムよりも離型性の良い電気絶縁性膜
を形成していることを特徴とする基板保持装置。2. A substrate holding apparatus having an electrode embedded near a surface in an electric insulator and having an electrostatic chuck for attracting a substrate by static electricity, wherein the electric insulator of the electrostatic chuck is made of ceramics. A substrate holding device, characterized in that a silicone rubber is provided on the electrical insulator, and an electrical insulating film having better releasability than the silicone rubber is formed on the surface of the silicone rubber.
μｍ厚のダイヤモンド状カーボンである請求項１または
２記載の基板保持装置。3. The method according to claim 1, wherein the electrically insulating film has a thickness of 0.05 μm to 5 μm.
The substrate holding device according to claim 1, wherein the substrate holding device is a diamond-like carbon having a thickness of μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29619198A JP2000113850A (en) | 1998-10-02 | 1998-10-02 | Substrate holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29619198A JP2000113850A (en) | 1998-10-02 | 1998-10-02 | Substrate holding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000113850A true JP2000113850A (en) | 2000-04-21 |
Family
ID=17830359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29619198A Pending JP2000113850A (en) | 1998-10-02 | 1998-10-02 | Substrate holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000113850A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693790B2 (en) | 2001-04-12 | 2004-02-17 | Komatsu, Ltd. | Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus |
| JP2009200393A (en) * | 2008-02-25 | 2009-09-03 | Nhk Spring Co Ltd | Electrostatic chuck and method of manufacturing the same |
| JP2010120068A (en) * | 2008-11-21 | 2010-06-03 | Mitsubishi Heavy Ind Ltd | Joining apparatus |
| JP2016154159A (en) * | 2015-02-20 | 2016-08-25 | 三菱重工工作機械株式会社 | Normal temperature bonding apparatus and normal temperature bonding method using them |
| WO2020044843A1 (en) * | 2018-08-30 | 2020-03-05 | 住友大阪セメント株式会社 | Electrostatic chuck device and method of manufacturing electrostatic chuck device |
-
1998
- 1998-10-02 JP JP29619198A patent/JP2000113850A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693790B2 (en) | 2001-04-12 | 2004-02-17 | Komatsu, Ltd. | Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus |
| JP2009200393A (en) * | 2008-02-25 | 2009-09-03 | Nhk Spring Co Ltd | Electrostatic chuck and method of manufacturing the same |
| JP2010120068A (en) * | 2008-11-21 | 2010-06-03 | Mitsubishi Heavy Ind Ltd | Joining apparatus |
| JP2016154159A (en) * | 2015-02-20 | 2016-08-25 | 三菱重工工作機械株式会社 | Normal temperature bonding apparatus and normal temperature bonding method using them |
| WO2020044843A1 (en) * | 2018-08-30 | 2020-03-05 | 住友大阪セメント株式会社 | Electrostatic chuck device and method of manufacturing electrostatic chuck device |
| JP2020035905A (en) * | 2018-08-30 | 2020-03-05 | 住友大阪セメント株式会社 | Electrostatic chuck device and manufacturing method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4418032B2 (en) | Electrostatic chuck | |
| JP4030350B2 (en) | Split electrostatic chuck | |
| JP4354983B2 (en) | Substrate processing equipment | |
| EP1070381A1 (en) | Electrostatic wafer clamp having low particulate contamination of wafers | |
| WO2006049085A1 (en) | Electrostatic chuck apparatus | |
| JPH09167794A (en) | Electrostatic chuck and plasma processing method | |
| JP4010541B2 (en) | Electrostatic adsorption device | |
| JP2021153122A (en) | Edge ring, substrate support, plasma processing system and method of replacing edge ring | |
| JPWO2009017088A1 (en) | Manufacturing method of electrostatic chuck mechanism | |
| JP6016349B2 (en) | Substrate holder and vacuum processing apparatus | |
| WO2021111732A1 (en) | Attracting-and-holding device and object surface machining method | |
| JPH0652758B2 (en) | Electrostatic check | |
| TW200818311A (en) | Heat conductive structure and substrate treatment apparatus | |
| JP2521471B2 (en) | Electrostatic suction device | |
| JP2767282B2 (en) | Substrate holding device | |
| JP2000113850A (en) | Substrate holding device | |
| CN106796915B (en) | Adsorption device and vacuum processing device | |
| WO2012026421A1 (en) | Electrostatic chuck apparatus and method for manufacturing same | |
| JPH11168132A (en) | Electrostatic adsorption device | |
| JP2000183143A (en) | Electrostatic chuck | |
| JP4338376B2 (en) | Electrostatic chuck device | |
| JP2004253402A (en) | Electrostatic chuck | |
| JPH0727959B2 (en) | Wafer holding mechanism | |
| JPH02130915A (en) | Plasma processing equipment | |
| JP2019057531A (en) | Wafer support device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041206 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20051220 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20060111 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070220 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071211 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080507 |