JP2003168829A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JP2003168829A JP2003168829A JP2002019260A JP2002019260A JP2003168829A JP 2003168829 A JP2003168829 A JP 2003168829A JP 2002019260 A JP2002019260 A JP 2002019260A JP 2002019260 A JP2002019260 A JP 2002019260A JP 2003168829 A JP2003168829 A JP 2003168829A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- diode chip
- conductor plate
- heat transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオードチ
ップを配線基板に実装した発光装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device having a light emitting diode chip mounted on a wiring board.
【０００２】[0002]
【従来の技術】従来から、発光ダイオードを用いた発光
装置として、図１９に示す構成のものが知られている。
図１９は特開平１１−１６８２３５号公報に記載された
ものであって、発光ダイオードチップ２を配線基板３１
にフェースダウン実装する構成を有している。すなわ
ち、配線基板３１には配線パターン３１ａが形成され、
発光ダイオードチップ２の電極位置に合わせて配線パタ
ーン３１ａに形成されている接続パッドに発光ダイオー
ドチップ２のアノードおよびカソードの両電極を半田バ
ンプなどによって接続するものである。発光ダイオード
チップ２の電極および配線パターンに設けた接続パッド
は５０〜１００μmの寸法に形成される。発光ダイオー
ドチップ２と配線基板３１との間にはアンダーフィル樹
脂３２が充填され、アンダーフィル樹脂３２により発光
ダイオードチップ２の配線基板３１に対する固定強度が
大きくなる。また、アンダーフィル樹脂３２は、合成樹
脂中に熱伝導率の高い材料を分散させてあり、発光ダイ
オードチップ２と配線基板３１とを熱的に結合させるこ
とによって発光ダイオードチップ２の放熱を促進する効
果も担っている。この構成の発光装置は、チップ状部品
として他の印刷配線基板などに実装される。2. Description of the Related Art Conventionally, as a light emitting device using a light emitting diode, one having a structure shown in FIG. 19 is known.
FIG. 19 is disclosed in Japanese Patent Laid-Open No. 11-168235, in which the light emitting diode chip 2 is mounted on the wiring board 31.
It has a face-down mounting structure. That is, the wiring pattern 31a is formed on the wiring board 31,
Both the anode and cathode electrodes of the light emitting diode chip 2 are connected to the connection pads formed on the wiring pattern 31a in accordance with the electrode positions of the light emitting diode chip 2 by solder bumps or the like. The electrodes of the light emitting diode chip 2 and the connection pads provided on the wiring pattern are formed to have a size of 50 to 100 μm. An underfill resin 32 is filled between the light emitting diode chip 2 and the wiring board 31, and the fixing strength of the light emitting diode chip 2 to the wiring board 31 is increased by the underfill resin 32. Further, the underfill resin 32 has a material having high thermal conductivity dispersed in a synthetic resin, and promotes heat dissipation of the light emitting diode chip 2 by thermally coupling the light emitting diode chip 2 and the wiring board 31. It also has an effect. The light emitting device having this configuration is mounted as another chip-shaped component on another printed wiring board or the like.
【０００３】一方、図２０に示すように、配線基板に代
えて発光ダイオードチップ２をサブマウント３３に実装
する構成のものも知られている（特開平１１−４０８４
８号公報）。サブマウント３３は半導体材料により形成
されており、図１９に示した構成と同様にサブマウント
３３に形成した配線パターン３３ａには発光ダイオード
チップ２がフェースダウン実装により実装される。ただ
し、発光ダイオードチップ２が実装されたサブマウント
３３は、リードフレーム３４にダイボンドにより実装さ
れる。なお、発光ダイオードチップ２とサブマウント３
３とリードフレーム３４の一部とは透光性を有する合成
樹脂のパッケージ３５に封入されている。On the other hand, as shown in FIG. 20, a structure in which the light emitting diode chip 2 is mounted on the submount 33 instead of the wiring substrate is also known (Japanese Patent Laid-Open No. 11-4084).
No. 8). The submount 33 is made of a semiconductor material, and the light emitting diode chip 2 is mounted by face-down mounting on the wiring pattern 33a formed on the submount 33 as in the configuration shown in FIG. However, the submount 33 on which the light emitting diode chip 2 is mounted is mounted on the lead frame 34 by die bonding. The light emitting diode chip 2 and the submount 3
3 and a part of the lead frame 34 are enclosed in a transparent synthetic resin package 35.
【０００４】ところで、図２１に示す特開昭６３−９０
８７２号公報に記載された構成のように、樹脂含浸基材
４１の厚み方向の少なくとも一面に金属箔が一体化され
た積層板に回路パターン４２を形成した後、積層板の所
要位置に貫通孔４３を有した凹部４４を形成するととも
に凹部４４の表面と貫通孔４３の内壁面および周縁とに
金属層４５を形成し、ダイボンドペースト４６およびボ
ンディングワイヤ４７を用いて凹部４４の中に発光素子
４０を実装したものが提案されている。この構成では、
主として貫通孔４３の内壁面および周縁によって発光素
子４０の放熱を行うから十分な放熱性が得られないとい
う問題がある。また、発光素子４０からの光の一部がボ
ンディングワイヤ４７によって遮られ外部に取り出す光
量が低下するという問題がある。By the way, Japanese Patent Laid-Open No. 63-90 shown in FIG.
As described in Japanese Patent No. 872, the circuit pattern 42 is formed on a laminated plate in which a metal foil is integrated on at least one surface in the thickness direction of the resin-impregnated base material 41, and then a through hole is formed at a required position of the laminated plate. 43 is formed, a metal layer 45 is formed on the surface of the recess 44 and the inner wall surface and the peripheral edge of the through hole 43, and the light emitting element 40 is formed in the recess 44 by using the die bond paste 46 and the bonding wire 47. An implementation of is proposed. With this configuration,
There is a problem that sufficient heat dissipation cannot be obtained because the light emitting element 40 dissipates heat mainly through the inner wall surface and the peripheral edge of the through hole 43. There is also a problem that a part of the light from the light emitting element 40 is blocked by the bonding wire 47 and the amount of light extracted to the outside is reduced.
【０００５】これに対して、上述のようなフェースダウ
ン実装を採用すれば、フェースアップ実装を行ってワイ
ヤボンディングを施す場合に比較すると、ボンディング
ワイヤや光を取り出す側に存在する電極の影が形成され
ず、発光ダイオードチップ２からの光を外部に取り出し
やすくなり出射効率の向上につながる。On the other hand, if the face-down mounting as described above is adopted, the shadow of the bonding wire and the electrode existing on the light extraction side is formed as compared with the case of performing the face-up mounting and wire bonding. Therefore, the light from the light emitting diode chip 2 can be easily extracted to the outside, which leads to the improvement of the emission efficiency.
【０００６】[0006]
【発明が解決しようとする課題】一方、照明用の光源と
しては、発光ダイオードの光量は一般に他の光源よりも
少なく、光量を増加させるには発光ダイオードに流す電
流を大きくする必要がある。現状の発光ダイオードは入
力電力を光に変換する効率が１０%前後であり、入力電
力の大部分は熱になっている。その結果、発光ダイオー
ドの温度が著しく上昇することになる。発光ダイオード
は、温度が上昇するとフォノン散乱などの現象により発
光効率が低下することが知られており、しかも温度が上
昇すると発光ダイオードを封入している合成樹脂の劣化
を早めることになる。また、温度がさらに上昇すれば発
光ダイオードを封入している合成樹脂のガラス転移温度
に達して合成樹脂が急速に劣化し、発光ダイオードが脱
落したり断線したりするという問題が生じる。On the other hand, as a light source for illumination, the light amount of the light emitting diode is generally smaller than that of other light sources, and it is necessary to increase the current flowing through the light emitting diode in order to increase the light amount. Current light emitting diodes have an efficiency of converting input power to light of about 10%, and most of the input power is heat. As a result, the temperature of the light emitting diode increases significantly. It is known that the light emitting efficiency of a light emitting diode decreases due to a phenomenon such as phonon scattering when the temperature rises, and further, the deterioration of the synthetic resin encapsulating the light emitting diode is accelerated when the temperature rises. Further, if the temperature further rises, the glass transition temperature of the synthetic resin encapsulating the light emitting diode is reached, the synthetic resin is rapidly deteriorated, and there is a problem that the light emitting diode falls off or breaks.
【０００７】この種の問題を回避しながらも発光ダイオ
ードに流す電流を増加させるには、発光ダイオードによ
って生じた熱を効率よく外部に放熱することが要求され
る。In order to increase the current flowing through the light emitting diode while avoiding this kind of problem, it is necessary to efficiently dissipate the heat generated by the light emitting diode to the outside.
【０００８】上述した構成では、発光ダイオードチップ
２からの熱は、アンダーフィル樹脂３２やパッケージ３
５に伝達されるとともに、発光ダイオードチップ２の電
極を通して配線基板３１やサブマウント３３にも伝達さ
れる。ただし、パッケージ３５は一般に合成樹脂からな
り熱伝導率が低いからパッケージ３５による放熱の効果
はあまり期待できない。また、アンダーフィル樹脂３２
は配線基板３１に熱を伝導するが、配線基板３１も一般
に基材が絶縁材料であって熱伝導率が低いから配線基板
３１による放熱の効果はあまり期待できない。一方、発
光ダイオードチップ２の電極からも配線基板３１やサブ
マウント３３にも熱が伝達され、配線パターン３１ａ，
３３ａは金属であるが厚み寸法が数十μm程度であるか
ら配線パターン３１ａ，３３ａの延長方向への熱伝導率
は低く、また、配線基板３１の基材は絶縁材料でありサ
ブマウント３３の基材は半導体材料であるから、結果的
に熱伝導率は低い。In the above structure, the heat from the light emitting diode chip 2 is applied to the underfill resin 32 and the package 3.
5 is transmitted to the wiring board 31 and the submount 33 through the electrodes of the light emitting diode chip 2. However, since the package 35 is generally made of synthetic resin and has a low thermal conductivity, the effect of heat dissipation by the package 35 cannot be expected so much. Also, the underfill resin 32
Conducts heat to the wiring board 31, but since the wiring board 31 is generally made of an insulating material and has a low thermal conductivity, the effect of heat dissipation by the wiring board 31 cannot be expected so much. On the other hand, heat is transferred from the electrodes of the light emitting diode chip 2 to the wiring board 31 and the submount 33, and the wiring pattern 31a,
33a is a metal, but its thickness is about several tens of μm, so that the thermal conductivity in the extending direction of the wiring patterns 31a and 33a is low, and the base material of the wiring board 31 is an insulating material and the base of the submount 33 is used. Since the material is a semiconductor material, the thermal conductivity is low as a result.
【０００９】この種の問題を解決するには、発光ダイオ
ードチップ２を金属のように熱伝導率の高い材料に接触
させるのが望ましい。しかしながら、熱伝導率の高い材
料は一般に電気に対しても良導体である。したがって、
電極間の絶縁を保った状態で、発光ダイオードチップ２
を導体に実装しなければならない。In order to solve this type of problem, it is desirable to contact the light emitting diode chip 2 with a material having a high thermal conductivity such as metal. However, materials with high thermal conductivity are generally good conductors of electricity. Therefore,
Light-emitting diode chip 2 with insulation between electrodes maintained
Must be mounted on the conductor.
【００１０】本発明は上記事由に鑑みて為されたもので
あり、その目的は、発光ダイオードにおいて発生する熱
の放熱効率を高めることによって発光効率の低下を防止
するとともに劣化を抑制した発光装置を提供することに
ある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light emitting device in which the efficiency of radiating the heat generated in a light emitting diode is increased to prevent a decrease in the luminous efficiency and to suppress the deterioration. To provide.
【００１１】[0011]
【課題を解決するための手段】請求項１の発明は、少な
くとも一面に絶縁層を備える導体板と、絶縁層を介して
導体板に積層された導電層と、少なくとも一方の電極が
導電層にフェースダウン実装により電気的に接続された
発光ダイオードチップとを備え、発光ダイオードと導体
板との対向面間には絶縁層よりも熱伝導率の高い熱伝達
部材が介装されることを特徴とする。According to a first aspect of the present invention, a conductor plate having an insulating layer on at least one surface, a conductive layer laminated on the conductor plate via the insulating layer, and at least one electrode serving as the conductive layer are provided. A light-emitting diode chip electrically connected by face-down mounting, and a heat transfer member having a higher thermal conductivity than an insulating layer is interposed between the facing surfaces of the light-emitting diode and the conductor plate. To do.
【００１２】請求項２の発明は、請求項１の発明におい
て、前記発光ダイオードの各電極が電極ごとに各別に設
けられた導電層にそれぞれ接続されていることを特徴と
する。The invention of claim 2 is characterized in that, in the invention of claim 1, each electrode of the light emitting diode is connected to a conductive layer provided separately for each electrode.
【００１３】請求項３の発明は、請求項１または請求項
２の発明において、前記熱伝達部材が前記導体板に一体
に形成されていることを特徴とする。The invention of claim 3 is characterized in that, in the invention of claim 1 or 2, the heat transfer member is formed integrally with the conductor plate.
【００１４】請求項４の発明は、請求項１または請求項
２の発明において、前記熱伝達部材が金属であることを
特徴とする。The invention of claim 4 is characterized in that, in the invention of claim 1 or 2, the heat transfer member is made of metal.
【００１５】請求項５の発明は、請求項１ないし請求項
４の発明において、前記導体板における前記発光ダイオ
ードチップの実装面とは異なる面側に前記導電層の一部
が外部回路への接続部として引き回されていることを特
徴とする。According to a fifth aspect of the invention, in the first to fourth aspects of the invention, a part of the conductive layer is connected to an external circuit on a surface side of the conductor plate different from a mounting surface of the light emitting diode chip. It is characterized by being routed as a department.
【００１６】請求項６の発明は、請求項４の発明におい
て、前記熱伝達部材が半田であることを特徴とする。The invention of claim 6 is characterized in that, in the invention of claim 4, the heat transfer member is solder.
【００１７】請求項７の発明は、請求項６の発明におい
て、前記発光ダイオードチップと前記導体板との対向面
間において前記電極と前記熱伝達部材との間に電気的な
絶縁性を有する障壁を設けたことを特徴とする。According to a seventh aspect of the invention, in the sixth aspect of the invention, a barrier having electrical insulation between the electrodes and the heat transfer member between the facing surfaces of the light emitting diode chip and the conductor plate. Is provided.
【００１８】請求項８の発明は、請求項７の発明におい
て、前記障壁が紫外線硬化樹脂からなることを特徴とす
る。The invention of claim 8 is characterized in that, in the invention of claim 7, the barrier is made of an ultraviolet curable resin.
【００１９】[0019]
【発明の実施の形態】（第１の実施の形態）本実施形態
の発光装置は、図１に示すように、導体板１１を基材と
した配線基板１に発光ダイオードチップ２を実装したも
のである。導体板１１としてはアルミニウム板のように
熱および電気の良導体である金属板を用いる。導体板１
１において発光ダイオードチップ２の実装面の一部には
絶縁層１３を介して導電層１２が形成される。導電層１
２としては金を用いており、導電層１２には配線パター
ンを形成してある。BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) As shown in FIG. 1, a light emitting device of the present embodiment has a light emitting diode chip 2 mounted on a wiring board 1 having a conductor plate 11 as a base material. Is. As the conductor plate 11, a metal plate that is a good conductor of heat and electricity, such as an aluminum plate, is used. Conductor plate 1
1, the conductive layer 12 is formed on a part of the mounting surface of the light emitting diode chip 2 with the insulating layer 13 interposed therebetween. Conductive layer 1
Gold is used as 2, and a wiring pattern is formed on the conductive layer 12.
【００２０】発光ダイオードチップ２はサファイア基板
上に窒化ガリウム系の発光層を形成し、ｐ層とｎ層とに
接続された各電極が主表面側に露出するものを用いてい
る（各図において発光ダイオードチップ２をサファイア
基板とｐ層とｎ層との３層構造で表している）。この発
光ダイオードチップ２は、上述した配線基板１にフェー
スダウン実装される。すなわち、発光ダイオードチップ
２の一方の電極は主表面に露出しており、他方の電極
（サファイア基板寄りの電極）は主表面の一部を除去し
て設けられているのであって、主表面に露出する電極に
は半田によるバンプ２１ａを形成し、サファイア基板寄
りの電極には金によるバンプ２１ｂを形成してある。こ
こに、主表面に露出する電極の面積はサファイア基板寄
りの電極よりも十分に大きく形成されており、この電極
がバンプ２１ａを介して導体板１１に接続される。ま
た、サファイア基板寄りの電極はバンプ２１ｂを介して
導電層１２に接続される。この構成によって、発光ダイ
オードチップ２は導体板１１とは半田によるバンプ２１
ａを介して比較的大きい面積で熱的に結合されることに
なる。半田は熱伝導性が比較的高く、しかもバンプ２１
ａの断面積が比較的大きいから、発光ダイオードチップ
２から導体板１１に対して効率よく熱を伝達させること
が可能になっている。つまり、本実施形態ではバンプ２
１ａが発光ダイオードチップ２と導体板１１との間の熱
伝達部材として機能する。なお、バンプ２１ａには半田
を用いているが、熱伝導率の高い材料であれば他の材料
を用いてもよい。The light emitting diode chip 2 has a gallium nitride type light emitting layer formed on a sapphire substrate and each electrode connected to the p layer and the n layer is exposed on the main surface side (in each figure). The light emitting diode chip 2 is represented by a three-layer structure including a sapphire substrate, a p-layer and an n-layer). The light emitting diode chip 2 is mounted face down on the wiring board 1 described above. That is, one electrode of the light emitting diode chip 2 is exposed on the main surface, and the other electrode (the electrode near the sapphire substrate) is provided by removing a part of the main surface. Bumps 21a made of solder are formed on the exposed electrodes, and bumps 21b made of gold are formed on the electrodes near the sapphire substrate. The area of the electrode exposed on the main surface is formed sufficiently larger than that of the electrode near the sapphire substrate, and this electrode is connected to the conductor plate 11 via the bump 21a. Further, the electrode near the sapphire substrate is connected to the conductive layer 12 via the bump 21b. With this configuration, the light emitting diode chip 2 and the conductor plate 11 are soldered to the bumps 21.
It will be thermally coupled in a relatively large area via a. The solder has a relatively high thermal conductivity and the bump 21
Since the cross-sectional area of a is relatively large, it is possible to efficiently transfer heat from the light emitting diode chip 2 to the conductor plate 11. That is, in the present embodiment, the bump 2
1a functions as a heat transfer member between the light emitting diode chip 2 and the conductor plate 11. Although solder is used for the bumps 21a, other materials may be used as long as they have a high thermal conductivity.
【００２１】本実施形態では、発光ダイオードチップ２
の２個の電極のうち主表面側の電極にバンプ２１ａを形
成しているから、サファイア基板寄りの電極の面積を大
きくとる場合よりも発光面積を大きくとることができ
る。また、この場合には発光ダイオードチップ２の表面
に酸化シリコンによって形成される絶縁性の保護膜の一
部をエッチングなどにより除去して主表面側の電極を設
けることになるから、発光ダイオードチップ２とバンプ
２１ａとの熱抵抗が低減され高い放熱性が得られる。In the present embodiment, the light emitting diode chip 2
Since the bump 21a is formed on the electrode on the main surface side of the two electrodes, the light emitting area can be made larger than the case where the area of the electrode near the sapphire substrate is large. Further, in this case, since a part of the insulating protective film formed of silicon oxide is removed by etching or the like on the surface of the light emitting diode chip 2 to provide the electrode on the main surface side, the light emitting diode chip 2 The thermal resistance between the bumps 21a and the bumps 21a is reduced, and high heat dissipation is obtained.
【００２２】一方、発光ダイオードチップ２の電極を形
成している面のうち各電極を除く部位を酸化シリコンよ
りなる絶縁性の保護膜で覆っている場合には、比較的大
きいバンプ２１ａを設けてもバンプ２１ａがバンプ２１
ｂあるいはバンプ２１ｂに対応する電極に直接接触しな
ければ短絡することがないから、どちらの電極にでも面
積の大きいバンプ２１ａを設けることが可能になる。On the other hand, when the portions of the surface of the light emitting diode chip 2 excluding the electrodes are covered with an insulating protective film made of silicon oxide, a relatively large bump 21a is provided. Bump 21a is bump 21
Since a short circuit does not occur unless the electrode corresponding to b or the bump 21b is directly contacted, it is possible to provide the bump 21a having a large area on either electrode.
【００２３】発光ダイオードチップ２を配線基板１に実
装した後には、発光ダイオードチップ２およびその周囲
を透光性の合成樹脂によって封止するのが望ましい。し
かして、上述のように発光ダイオードチップ２がバンプ
２１ａを介して導体板１１に熱的に結合されているか
ら、発光ダイオードチップ２で生じる熱が導体板１１を
介して放熱されることになり、従来構成に比較すると放
熱性が大幅に改善され、点灯時の発光ダイオードチップ
２の温度を従来構成よりも低下させることが可能にな
る。After the light emitting diode chip 2 is mounted on the wiring board 1, it is desirable to seal the light emitting diode chip 2 and its surroundings with a transparent synthetic resin. Since the light emitting diode chip 2 is thermally coupled to the conductor plate 11 via the bumps 21a as described above, the heat generated in the light emitting diode chip 2 is radiated via the conductor plate 11. As compared with the conventional configuration, the heat dissipation is significantly improved, and the temperature of the light emitting diode chip 2 during lighting can be lowered as compared with the conventional configuration.
【００２４】ここにおいて、図２に示すように、絶縁体
からなる反射器１４によって発光ダイオードチップ２の
周囲を囲むようにし、反射器１４の一部を絶縁層１３と
して用いるようにすれば、発光ダイオードチップ２から
の光の配光を制御することが可能になり、光の利用効率
を高めることが可能になる。反射器１４は発光ダイオー
ドチップ２から離れるに従って開口面積を広げる形状に
形成されており、反射器１４の内部に透光性の合成樹脂
を封止樹脂１５として充填することにより、封止樹脂１
５の導入時における流出を防止することになる。Here, as shown in FIG. 2, if the light emitting diode chip 2 is surrounded by a reflector 14 made of an insulating material and a part of the reflector 14 is used as the insulating layer 13, light is emitted. It is possible to control the light distribution of the light from the diode chip 2, and it is possible to improve the light utilization efficiency. The reflector 14 is formed in such a shape that its opening area increases as the distance from the light-emitting diode chip 2 increases. By filling the inside of the reflector 14 with a transparent synthetic resin as the sealing resin 15, the sealing resin 1
5 will be prevented from flowing out at the time of introduction.
【００２５】また、図２に示す構成例では１枚の配線基
板１に１個の発光ダイオードチップ２を実装している
が、図３に示すように、１枚の配線基板１を複数枚の導
体板１１により形成し、各導体板１１に少なくとも１個
ずつの発光ダイオードチップ２を実装する構成を採用す
ることもできる。この構成では、隣り合う各一対の導体
板１１が絶縁層１３によって連結されており、隣接する
各一対の導体板１１のうちの一方に実装した発光ダイオ
ードチップ２の一方の電極と、他方の導体板１１とを絶
縁層１３の表面に形成した導電層１２を介して電気的に
接続する構成としてある。また、隣り合う各一対の導体
板１１に跨る部位では絶縁層１３の上に反射器１４を設
けてある。このような構成を実現するには、１枚の金属
板に絶縁層１３を形成した後に、金属板の裏面側（発光
ダイオードチップ２の実装面とは反対側の面）から切断
具によって分離溝１１ａを形成することによって、各導
体板１１を電気的に独立させるのである。このような構
成を採用すれば、複数個の発光ダイオードチップ２を直
列接続することができる。Further, in the configuration example shown in FIG. 2, one light emitting diode chip 2 is mounted on one wiring board 1. However, as shown in FIG. 3, one wiring board 1 is made up of a plurality of wiring boards 1. It is also possible to adopt a configuration in which the conductor plates 11 are formed and at least one light emitting diode chip 2 is mounted on each conductor plate 11. In this configuration, the pair of adjacent conductor plates 11 are connected by the insulating layer 13, and one electrode of the light emitting diode chip 2 mounted on one of the pair of adjacent conductor plates 11 and the other conductor The plate 11 and the plate 11 are electrically connected to each other through the conductive layer 12 formed on the surface of the insulating layer 13. In addition, a reflector 14 is provided on the insulating layer 13 at a portion that straddles each pair of adjacent conductor plates 11. In order to realize such a configuration, after the insulating layer 13 is formed on one metal plate, a separation tool is provided from the back surface side of the metal plate (the surface opposite to the mounting surface of the light emitting diode chip 2) with a cutting tool. By forming 11a, each conductor plate 11 is electrically independent. If such a configuration is adopted, a plurality of light emitting diode chips 2 can be connected in series.
【００２６】なお、本実施形態においては反射器１４や
封止樹脂１５は必須ではなく、たとえば反射器１４は別
途に設けるようにしてもよい。つまり、反射器１４や封
止樹脂１５を設けていない構成であっても、発光ダイオ
ードチップ２の放熱性が改善され、従来構成に比較する
と点灯時の発光ダイオードチップ２の温度が低下し、結
果的に発光装置の寿命を低下させることなく、発光装置
の光出力を増加させることが可能になる。また、従来構
成と同程度の光出力を得る場合には、従来構成よりも発
光装置の寿命が向上する。In the present embodiment, the reflector 14 and the sealing resin 15 are not essential, and the reflector 14 may be separately provided, for example. That is, even if the reflector 14 and the sealing resin 15 are not provided, the heat dissipation of the light emitting diode chip 2 is improved, and the temperature of the light emitting diode chip 2 at the time of lighting is reduced as compared with the conventional configuration, resulting in Therefore, the light output of the light emitting device can be increased without shortening the life of the light emitting device. Further, when the light output equivalent to that of the conventional configuration is obtained, the life of the light emitting device is improved as compared with the conventional configuration.
【００２７】ところで、図２に示すように導体板１１の
一部を囲む形状の反射器１４を形成する場合には、絶縁
層１３として立体配線基板（ＭＩＤ基板）を成形するた
めの合成樹脂またはセラミックスなどの材料を用いれば
よい。この構成では、導体層１２が立体配線され、導体
板１１における発光ダイオードチップ２の実装面とは異
なる面側まで導体層１２が引き回される。この構成を採
用すれば、発光ダイオードチップ２を配線基板１に実装
して形成した発光装置を外部回路に容易に接続すること
ができ、外部回路を設けた別の回路基板に対する電気的
接続を半田接合やカシメ接合によって容易に行うことが
できる。By the way, when the reflector 14 having a shape surrounding a part of the conductor plate 11 is formed as shown in FIG. 2, a synthetic resin for molding a three-dimensional wiring board (MID board) as the insulating layer 13 or A material such as ceramics may be used. In this configuration, the conductor layer 12 is three-dimensionally wired, and the conductor layer 12 is routed to the surface side of the conductor plate 11 different from the mounting surface of the light emitting diode chip 2. By adopting this configuration, the light emitting device formed by mounting the light emitting diode chip 2 on the wiring board 1 can be easily connected to an external circuit, and the electrical connection to another circuit board provided with the external circuit is soldered. It can be easily performed by joining or crimping.
【００２８】（第２の実施の形態）本実施形態は、図４
に示すように、発光ダイオードチップ２の各電極にそれ
ぞれ接続される導電層１２を形成したものである。すな
わち、配線基板１における発光ダイオードチップ２の実
装面に絶縁層１３を介して電気的に独立した導電層１２
を形成し、各導電層１２に発光ダイオードチップ２の各
電極をそれぞれ接続するものである。ただし、発光ダイ
オードチップ２において導体板１１との対向面は酸化シ
リコンからなる保護膜により覆われており、発光ダイオ
ードチップ２と導体板１１との間には熱伝導率の高い材
料からなる熱伝達部材１６が挟装される。熱伝達部材１
６としてはたとえば銀板を用いる。(Second Embodiment) This embodiment is shown in FIG.
As shown in, the conductive layer 12 connected to each electrode of the light emitting diode chip 2 is formed. That is, the electrically conductive layer 12 that is electrically independent from the mounting surface of the light emitting diode chip 2 on the wiring board 1 via the insulating layer 13.
And each electrode of the light emitting diode chip 2 is connected to each conductive layer 12. However, the surface of the light emitting diode chip 2 facing the conductor plate 11 is covered with a protective film made of silicon oxide, and the heat transfer made of a material having a high thermal conductivity is provided between the light emitting diode chip 2 and the conductor plate 11. The member 16 is sandwiched. Heat transfer member 1
For example, a silver plate is used as 6.
【００２９】発光ダイオードチップ２の各電極は各導電
層１２に対して導電性ペースト２２を介してそれぞれ接
続されている。すなわち、発光ダイオードチップ２の電
極と各導電層１２とを銀ペーストのような導電性ペース
ト２２により接続することによって、導電性ペースト２
２の硬化に伴う収縮によって、熱伝達部材１６を発光ダ
イオードチップ２と導体板１１とに密着させることが可
能になる。本実施形態においても発光ダイオードチップ
２およびその周囲を透光性の合成樹脂によって封止する
のが望ましく、合成樹脂によって発光ダイオードチップ
２を保護することができ、しかも発光ダイオードチップ
２と導体板１１との機械的結合強度を高めることができ
る。なお、導電性ペースト２２に代えて第１の実施の形
態と同様にバンプを用いることも可能である。このこと
は以後の実施形態においても同様である。Each electrode of the light emitting diode chip 2 is connected to each conductive layer 12 via a conductive paste 22. That is, the conductive paste 2 is formed by connecting the electrodes of the light emitting diode chip 2 and the respective conductive layers 12 with a conductive paste 22 such as a silver paste.
Due to the shrinkage caused by the curing of 2, the heat transfer member 16 can be brought into close contact with the light emitting diode chip 2 and the conductor plate 11. Also in this embodiment, it is desirable to seal the light emitting diode chip 2 and its surroundings with a light-transmitting synthetic resin. The light emitting diode chip 2 can be protected by the synthetic resin, and the light emitting diode chip 2 and the conductor plate 11 can be protected. It is possible to increase the mechanical bond strength with. Instead of the conductive paste 22, bumps can be used as in the first embodiment. This also applies to the subsequent embodiments.
【００３０】本実施形態は、図５に示すように、１枚の
配線基板１に１個の発光ダイオードチップ２を実装する
構成でも良いが、図６に示すように、１枚の配線基板１
に複数個の発光ダイオードチップ２を実装する構成を採
用してもよい。本実施形態では、発光ダイオードチップ
２の間の電路は導電層１２により形成されることにな
る。図５および図６の構成において、図２および図３と
同符号を付した構成は同様の機能を持つ。In the present embodiment, one light emitting diode chip 2 may be mounted on one wiring board 1 as shown in FIG. 5, but as shown in FIG.
Alternatively, a configuration in which a plurality of light emitting diode chips 2 are mounted may be adopted. In this embodiment, the electric path between the light emitting diode chips 2 is formed by the conductive layer 12. In the configurations of FIGS. 5 and 6, the configurations denoted by the same reference numerals as those of FIGS. 2 and 3 have the same functions.
【００３１】上述の実施形態では熱伝達部材１６を導体
板１１と発光ダイオードチップ２とに接触させているだ
けであるが、図７に示すように、熱伝達部材１６の両面
をそれぞれ接着剤１７により導体板１１と発光ダイオー
ドチップ２とに接着する構成を採用してもよい。なお、
導体板１１と発光ダイオードチップ２との一方にのみ接
着剤１７によって熱伝達部材１６を接着し、他方には当
接させる構成を採用してもよい。接着剤１７には熱伝導
性に優れる半田や銀ペーストを用いると高い放熱効果が
得られるが、アンダーフィル樹脂として用いられている
合成樹脂を接着剤１７として用いる構成を採用しても接
着剤１７の厚みを小さくすれば、発光ダイオードチップ
２の温度上昇の抑制に比較的良好な効果が得られる。In the above-mentioned embodiment, the heat transfer member 16 is only brought into contact with the conductor plate 11 and the light emitting diode chip 2, but as shown in FIG. It is also possible to adopt a configuration in which the conductor plate 11 and the light emitting diode chip 2 are bonded together by In addition,
A configuration may be adopted in which the heat transfer member 16 is adhered to only one of the conductor plate 11 and the light emitting diode chip 2 with the adhesive 17 and is brought into contact with the other. Although a high heat dissipation effect can be obtained by using solder or silver paste having excellent thermal conductivity for the adhesive agent 17, the adhesive agent 17 can be used even if the synthetic resin used as the underfill resin is used as the adhesive agent 17. If the thickness of the light emitting diode chip 2 is reduced, a relatively good effect can be obtained in suppressing the temperature rise of the light emitting diode chip 2.
【００３２】本実施形態では、熱伝達部材１６として銀
板を用いる例を示したが、絶縁層１３に比べて十分に高
い熱伝導性を有していればよい。したがって、たとえ
ば、熱伝導率の高い金属の金属粉を合成樹脂に分散させ
た材料により熱伝達部材１６を形成することも可能であ
る。あるいはまた、図８に示すように、熱伝達部材１６
として半田を用いることができる。熱伝達部材１６とし
て半田を用いる場合には、加熱処理によって半田を溶融
させることで発光ダイオードチップ２および導体板１１
に熱伝達部材１６を密着させることができ、結果的に発
光ダイオードチップ２および導体板１１と熱伝達部材１
６とを良好に接触させることができ、発光ダイオードチ
ップ２と導体板１１との間の熱抵抗が小さくなって放熱
効率を高めることができる。In this embodiment, an example in which a silver plate is used as the heat transfer member 16 has been shown, but it is sufficient that the heat transfer member 16 has a sufficiently high thermal conductivity as compared with the insulating layer 13. Therefore, for example, the heat transfer member 16 can be formed of a material in which metal powder of a metal having high thermal conductivity is dispersed in a synthetic resin. Alternatively, as shown in FIG. 8, the heat transfer member 16
Can be used as the solder. When solder is used as the heat transfer member 16, the light emitting diode chip 2 and the conductor plate 11 are formed by melting the solder by heat treatment.
The heat transfer member 16 can be closely attached to the heat transfer member 1, and as a result, the light emitting diode chip 2 and the conductor plate 11 and the heat transfer member 1 can be attached.
6 can be brought into good contact with each other, the thermal resistance between the light emitting diode chip 2 and the conductor plate 11 can be reduced, and heat dissipation efficiency can be improved.
【００３３】ただし、半田を熱伝達部材１６として機能
させる場合には半田を加熱して溶融させるから、発光ダ
イオードチップ２の電極と半田（熱伝達部材１６）との
電気的接続が生じないようにしなければならない。つま
り、溶融した半田（熱伝達部材１６）が発光ダイオード
チップ２、導電性ペースト２２、導電層１２に付着しな
いようにする必要がある。そこで、図９に示すように、
半田からなる熱伝達部材１６と、導電性ペースト２２お
よび導電部１２との間（つまり、発光ダイオードチップ
２の電極との間）を電気的に絶縁するために、発光ダイ
オード２と導体板１１との対向面間であって発光ダイオ
ードチップ２の電極と半田からなる熱伝達部材１６との
間に絶縁材料からなる障壁１８を設けるのが望ましい。
つまり、発光ダイオードチップ２の電極（導電性ペース
ト２２および導電層１２）に囲まれた内側領域に半田か
らなる熱伝達部材１６を囲む障壁１８を形成する。この
ような障壁１８を設けることによって、半田の溶融のた
めの加熱処理に際して半田が発光ダイオードチップ２の
電極と電気的に接続されることがなく、不良品の発生を
防止することができる。ここにおいて、障壁１８の材料
として紫外線硬化樹脂を用いると障壁１８を容易に形成
することができる。However, when the solder functions as the heat transfer member 16, the solder is heated and melted, so that electrical connection between the electrode of the light emitting diode chip 2 and the solder (heat transfer member 16) should not occur. There must be. That is, it is necessary to prevent the melted solder (heat transfer member 16) from adhering to the light emitting diode chip 2, the conductive paste 22, and the conductive layer 12. Therefore, as shown in FIG.
In order to electrically insulate between the heat transfer member 16 made of solder and the conductive paste 22 and the conductive portion 12 (that is, between the electrodes of the light emitting diode chip 2), the light emitting diode 2 and the conductor plate 11 are separated from each other. It is desirable to provide a barrier 18 made of an insulating material between the opposing surfaces of the light emitting diode chip 2 and the heat transfer member 16 made of solder.
That is, the barrier 18 surrounding the heat transfer member 16 made of solder is formed in the inner region surrounded by the electrodes (the conductive paste 22 and the conductive layer 12) of the light emitting diode chip 2. By providing such a barrier 18, the solder is not electrically connected to the electrodes of the light emitting diode chip 2 during the heat treatment for melting the solder, and it is possible to prevent the generation of defective products. Here, when the ultraviolet curable resin is used as the material of the barrier 18, the barrier 18 can be easily formed.
【００３４】本実施形態の構成によっても第１の実施の
形態と同様に発光ダイオードチップ２を導体板１１に熱
的に結合しているから、発光ダイオードチップ２の放熱
性が改善され、発光ダイオードチップ２の温度上昇を抑
制することができる。他の構成および動作は第１の実施
の形態と同様である。According to the structure of this embodiment, the light emitting diode chip 2 is thermally coupled to the conductor plate 11 as in the first embodiment, so that the heat dissipation of the light emitting diode chip 2 is improved and the light emitting diode is improved. The temperature rise of the chip 2 can be suppressed. Other configurations and operations are similar to those of the first embodiment.
【００３５】ところで、図５に示すように導体板１１の
一部を囲む形状の反射器１４を形成する場合には、絶縁
層１３として立体配線基板（ＭＩＤ基板）を成形するた
めの合成樹脂またはセラミックスなどの材料を用いれば
よい。この構成では、導体層１２が立体配線され、導体
板１１における発光ダイオードチップ２の実装面とは異
なる面側まで導体層１２が引き回される。この構成を採
用すれば、発光ダイオードチップ２を配線基板１に実装
して形成した発光装置を外部回路に容易に接続すること
ができ、外部回路を設けた別の回路基板に対する電気的
接続を半田接合やカシメ接合によって容易に行うことが
できる。By the way, as shown in FIG. 5, when the reflector 14 having a shape surrounding a part of the conductor plate 11 is formed, a synthetic resin for molding a three-dimensional wiring board (MID board) as the insulating layer 13 or A material such as ceramics may be used. In this configuration, the conductor layer 12 is three-dimensionally wired, and the conductor layer 12 is routed to the surface side of the conductor plate 11 different from the mounting surface of the light emitting diode chip 2. By adopting this configuration, the light emitting device formed by mounting the light emitting diode chip 2 on the wiring board 1 can be easily connected to an external circuit, and the electrical connection to another circuit board provided with the external circuit is soldered. It can be easily performed by joining or crimping.
【００３６】（第３の実施の形態）本実施形態は、図１
０に示すように、第２の実施の形態における熱伝達部材
１６を導体板１１に連続一体に突設したものである。他
の構成は第２の実施の形態と同様であって、本実施形態
の構成では導体板１１と別に熱伝達部材１６を設ける必
要がないから、第２の実施の形態よりも部品点数が低減
される。(Third Embodiment) This embodiment is shown in FIG.
As shown in FIG. 0, the heat transfer member 16 in the second embodiment is continuously and integrally provided on the conductor plate 11. The other configuration is the same as that of the second embodiment, and in the configuration of this embodiment, it is not necessary to provide the heat transfer member 16 separately from the conductor plate 11, so the number of components is smaller than that of the second embodiment. To be done.
【００３７】ところで、導体板１１に連続一体に突設し
た熱伝達部材１６の先端面を発光ダイオードチップ２に
接触させるには、第２の実施の形態と同様に導電性ペー
ストの硬化時の収縮を利用するほか、図１１に示す構成
を採用することも可能である。図１１に示す例では、図
１１（ａ）のように一面に導電層２３を有する絶縁板２
４を配線基板１とは別に用意してある。絶縁板２４は熱
伝達部材１６が挿入される透孔２４ａを有しており、発
光ダイオードチップ２が導電層２３に実装された後に、
図１１（ｂ）のように導体板１１に突設した熱伝達部材
１６が絶縁板２４の透孔２４ａに挿入される。ここで、
熱伝達部材１６の先端面は接着剤２５により発光ダイオ
ードチップ２に接着される。接着剤２５としては熱伝導
率の高い半田や銀ペーストが望ましい。また、配線基板
１に設けた導電層１２と絶縁板２４に設けた導電層２３
とはボンディングワイヤ２６を介して電気的に接続され
る。なお、図示例では発光ダイオード２の電極を導電層
２３に対して導電性ペースト２２により接続している
が、第１の実施の形態と同様に金あるいは半田のバンプ
によって接続する構成を採用することも可能である。By the way, in order to bring the front end surface of the heat transfer member 16 projecting continuously and integrally with the conductor plate 11 into contact with the light emitting diode chip 2, the conductive paste shrinks during curing, as in the second embodiment. Alternatively, the configuration shown in FIG. 11 may be adopted. In the example shown in FIG. 11, the insulating plate 2 having the conductive layer 23 on one surface as shown in FIG.
4 is prepared separately from the wiring board 1. The insulating plate 24 has a through hole 24a into which the heat transfer member 16 is inserted, and after the light emitting diode chip 2 is mounted on the conductive layer 23,
As shown in FIG. 11B, the heat transfer member 16 protruding from the conductor plate 11 is inserted into the through hole 24 a of the insulating plate 24. here,
The tip surface of the heat transfer member 16 is bonded to the light emitting diode chip 2 with an adhesive 25. As the adhesive 25, solder or silver paste having high thermal conductivity is desirable. Further, the conductive layer 12 provided on the wiring board 1 and the conductive layer 23 provided on the insulating plate 24.
Are electrically connected to each other via a bonding wire 26. Although the electrodes of the light emitting diode 2 are connected to the conductive layer 23 by the conductive paste 22 in the illustrated example, a structure in which they are connected by gold or solder bumps as in the first embodiment is adopted. Is also possible.
【００３８】絶縁層１３は第１の実施の形態と同様に反
射器１４に一体に設けることができるから、図１２に示
すように反射器１４の中に導体板１１を埋設した形とす
れば、導体板１１を反射器１４によって保持することが
できる。また、図１３に示すように導体板１１の一部を
反射器１４に埋設し、導体板１１の裏面側（発光ダイオ
ードチップ２の実装面とは反対側）では反射器１４から
導体板１１を露出させる構成とすれば、図１２に示す構
成と同様に導体板１１を反射器１４によって保持しなが
らも放熱性により優れた構成とすることが可能である。Since the insulating layer 13 can be provided integrally with the reflector 14 as in the first embodiment, if the conductor plate 11 is embedded in the reflector 14 as shown in FIG. The conductor plate 11 can be held by the reflector 14. Further, as shown in FIG. 13, a part of the conductor plate 11 is embedded in the reflector 14, and the conductor plate 11 is removed from the reflector 14 on the back side of the conductor plate 11 (the side opposite to the mounting surface of the light emitting diode chip 2). With the exposed structure, the conductor plate 11 can be held by the reflector 14 as in the structure shown in FIG.
【００３９】図１４に示す構成は、導体板１１を板金に
よって形成したものであって、プレス加工によって屈曲
させることにより導体板１１に熱伝達部材１６を一体に
形成してある。また、導体板１１は大部分が反射器１４
に埋設された形になっており、反射器１４の裏面側にお
いて導体板１１の一部が外部に露出する構成としてあ
る。この構成を採用しても放熱性を確保することができ
る。他の構成および動作は第２の実施の形態と同様であ
る。In the structure shown in FIG. 14, the conductor plate 11 is formed of sheet metal, and the heat transfer member 16 is integrally formed on the conductor plate 11 by bending it by press working. Most of the conductor plate 11 is a reflector 14.
In the configuration, the conductor plate 11 is partially exposed on the back surface side of the reflector 14. Even if this configuration is adopted, heat dissipation can be ensured. Other configurations and operations are similar to those of the second embodiment.
【００４０】さらに、導体板１１に熱伝達部材１６を一
体に形成する方法としては、切削加工によるほか、図１
５に示すように、導体板１１の裏面側に凹所１１ｂを形
成するよう打ち出したり、図１６に示すように、導体板
１１の表面側に形成した凹所１１ｃに熱伝達部材１６を
嵌合させて導体板１１を熱伝達部材１６に一体化しても
よい。Further, as a method for integrally forming the heat transfer member 16 on the conductor plate 11, a cutting process is used, and also the method shown in FIG.
As shown in FIG. 5, the conductor plate 11 is punched out so as to form a recess 11b on the back surface side, or as shown in FIG. 16, the heat transfer member 16 is fitted into the recess 11c formed on the front surface side of the conductor plate 11. Alternatively, the conductor plate 11 may be integrated with the heat transfer member 16.
【００４１】ところで、図１２、図１３に示すように導
体板１１の一部を囲む形状の反射器１４を形成する場合
には、絶縁層１３として立体配線基板（ＭＩＤ基板）を
成形するための合成樹脂またはセラミックスなどの材料
を用いればよい。この構成では、導体層１２が立体配線
され、導体板１１における発光ダイオードチップ２の実
装面とは異なる面側まで導体層１２が引き回される。こ
の構成を採用すれば、発光ダイオードチップ２を配線基
板１に実装して形成した発光装置を外部回路に容易に接
続することができ、外部回路を設けた別の回路基板に対
する電気的接続を半田接合やカシメ接合によって容易に
行うことができる。By the way, as shown in FIGS. 12 and 13, when the reflector 14 having a shape surrounding a part of the conductor plate 11 is formed, a three-dimensional wiring board (MID board) is formed as the insulating layer 13. A material such as synthetic resin or ceramics may be used. In this configuration, the conductor layer 12 is three-dimensionally wired, and the conductor layer 12 is routed to the surface side of the conductor plate 11 different from the mounting surface of the light emitting diode chip 2. By adopting this configuration, the light emitting device formed by mounting the light emitting diode chip 2 on the wiring board 1 can be easily connected to an external circuit, and the electrical connection to another circuit board provided with the external circuit is soldered. It can be easily performed by joining or crimping.
【００４２】（第４の実施の形態）上述した各実施形態
では、導体板１１に熱的に結合した熱伝達部材１６を設
けているが、本実施形態では図１７に示すように、導体
板１１を設けずに熱伝達部材１６のみを設けた構成と
し、配線基板１にはガラスエポキシ基板からなる印刷配
線基板を用いている。つまり、絶縁層１３に導電層１２
が積層された片面の印刷配線基板が配線基板１になる。
ただし、発光ダイオードチップ２の電極との接合性を考
慮して導電層１２には金を用いている。配線基板１には
透孔１ｄが形成され、透孔１ｄに挿通されたピン状の熱
伝達部材１６の一端面が発光ダイオードチップ２に熱的
に結合されている。この構成では、熱伝達部材１６のみ
では十分な放熱性能を確保することがでいないが、熱伝
達部材１６において発光ダイオードチップ２とは反対側
の端部を器具の筐体などに設けた放熱性に優れた部材に
接触させることによって、放熱性能を確保することが可
能になっている。つまり、本実施形態では熱伝達部材１
６を接触させる部材と導電層１２との間に絶縁層１３が
介在するから、この部材が導体板として機能することに
なる。ここに、熱伝達部材１６としてアルミニウムのよ
うに熱伝導率の高い材料を用いるのが望ましい。(Fourth Embodiment) In each of the above-described embodiments, the heat transfer member 16 thermally coupled to the conductor plate 11 is provided, but in the present embodiment, as shown in FIG. 11 is not provided and only the heat transfer member 16 is provided, and a printed wiring board made of a glass epoxy board is used as the wiring board 1. That is, the conductive layer 12 is formed on the insulating layer 13.
The one-sided printed wiring board on which is laminated becomes the wiring board 1.
However, gold is used for the conductive layer 12 in consideration of the bondability with the electrode of the light emitting diode chip 2. A through hole 1d is formed in the wiring board 1, and one end surface of the pin-shaped heat transfer member 16 inserted into the through hole 1d is thermally coupled to the light emitting diode chip 2. In this configuration, the heat transfer member 16 alone cannot secure sufficient heat dissipation performance, but the heat transfer member 16 has an end portion on the side opposite to the light emitting diode chip 2 provided in the housing of the appliance or the like. It is possible to secure the heat dissipation performance by contacting the excellent member. That is, in this embodiment, the heat transfer member 1
Since the insulating layer 13 is interposed between the member for contacting 6 and the conductive layer 12, this member functions as a conductor plate. Here, it is desirable to use a material having a high thermal conductivity such as aluminum for the heat transfer member 16.
【００４３】本実施形態において熱伝達部材１６を発光
ダイオードチップ２に確実に接触させるには、図１８
（ａ）に示すように発光ダイオードチップ２を配線基板
１に実装した後に、図１２（ｂ）のように、配線基板１
に形成されている透孔１ｄに熱伝達部材１６を挿入し、
発光ダイオードチップ２の下面に接着すればよい。接着
剤としては、熱伝導性に優れる半田や銀ペーストが望ま
しい。他の構成および作用は第１の実施の形態と同様で
ある。In order to make sure that the heat transfer member 16 is brought into contact with the light emitting diode chip 2 in this embodiment, the method shown in FIG.
After mounting the light emitting diode chip 2 on the wiring board 1 as shown in (a), as shown in FIG.
Insert the heat transfer member 16 into the through hole 1d formed in
It may be bonded to the lower surface of the light emitting diode chip 2. As the adhesive, solder or silver paste having excellent thermal conductivity is desirable. Other configurations and operations are similar to those of the first embodiment.
【００４４】上述した各実施形態では、導体板１１とし
てアルミニウム板を用いたが、導体板１１の材料として
は熱および電気の良導体であればよく、たとえば金を用
いることも可能である。また、導電層１２には金を用い
ているが、銀や銅のように導電性に優れた導体であれば
よい。また、発光ダイオードチップ２としては、サファ
イア基板上に窒化ガリウム系の発光層を積層したものを
用いたが、基板が透光性を有していてフェースダウン実
装が可能な発光ダイオードチップ２であればよい。Although the aluminum plate is used as the conductor plate 11 in each of the above-described embodiments, the conductor plate 11 may be made of any material having good heat and electricity, and gold may be used, for example. Although gold is used for the conductive layer 12, any conductive material having excellent conductivity such as silver or copper may be used. As the light emitting diode chip 2, a sapphire substrate on which a gallium nitride-based light emitting layer is laminated is used. However, the light emitting diode chip 2 may be a face-down mount substrate as long as the substrate has a light transmitting property. Good.
【００４５】[0045]
【発明の効果】請求項１の発明は、少なくとも一面に絶
縁層を備える導体板と、絶縁層を介して導体板に積層さ
れた導電層と、少なくとも一方の電極が導電層にフェー
スダウン実装により電気的に接続された発光ダイオード
チップとを備え、発光ダイオードと導体板との対向面間
には絶縁層よりも熱伝導率の高い熱伝達部材が介装され
るものであり、発光ダイオードチップで発生した熱を熱
伝達部材を介して導体板に伝達することによって発光ダ
イオードチップの放熱性が改善され、従来構成に比較す
ると点灯時の発光ダイオードチップの温度上昇を抑制す
ることができる。その結果、発光ダイオードチップの寿
命を低下させることなく光出力を増加させることができ
る。また、従来構成と同程度の光出力で使用する場合に
は従来構成よりも寿命が向上する。According to the invention of claim 1, a conductor plate having an insulating layer on at least one surface, a conductive layer laminated on the conductor plate via the insulating layer, and at least one electrode by face-down mounting on the conductive layer. An electrically connected light emitting diode chip is provided, and a heat transfer member having a higher thermal conductivity than the insulating layer is interposed between the facing surfaces of the light emitting diode and the conductor plate. By transmitting the generated heat to the conductor plate via the heat transfer member, the heat dissipation of the light emitting diode chip is improved, and the temperature rise of the light emitting diode chip during lighting can be suppressed as compared with the conventional configuration. As a result, the light output can be increased without reducing the life of the light emitting diode chip. Further, when used with a light output comparable to that of the conventional configuration, the life is improved as compared with the conventional configuration.
【００４６】請求項２の発明は、請求項１の発明におい
て、前記発光ダイオードの各電極が電極ごとに各別に設
けられた導電層にそれぞれ接続されているものであり、
熱伝達部材は発光ダイオードチップの電極とは電気的に
独立した形で放熱に寄与することになる。この構成は、
電極が発光ダイオードの大きさに対して比較的小さい場
合であっても発光ダイオードチップから導体板に熱を伝
達することができる。According to a second aspect of the present invention, in the first aspect of the invention, each electrode of the light emitting diode is connected to a conductive layer provided separately for each electrode,
The heat transfer member contributes to heat dissipation in a form electrically independent of the electrodes of the light emitting diode chip. This configuration
Heat can be transferred from the LED chip to the conductor plate even if the electrodes are relatively small relative to the size of the LED.
【００４７】請求項３の発明は、請求項１または請求項
２の発明において、前記熱伝達部材が前記導体板に一体
に形成されているので、熱伝達部材と導体板との熱的結
合の結合度を高めることができる。一方に、発光ダイオ
ードチップの電極をバンプにより他部材と接合した場合
には発光ダイオードと他部材との間に数十μｍ程度の隙
間が生じる。他部材が導体板に対して絶縁層を介して形
成されている導電層であるとすれば、この寸法に導電層
と絶縁層との厚み分を加えた寸法だけ発光ダイオードチ
ップと導体板とが離れることになるから、結果的にその
寸法は１００μｍ以上になる。このような場合には発光
ダイオードチップと導体板との距離が大きくなって熱伝
導は悪くなる。そこで、導体板に熱伝達部材を一体に設
けることによって発光ダイオードチップと導体板との距
離を小さくしているのである。According to a third aspect of the present invention, in the first or second aspect of the present invention, the heat transfer member is integrally formed with the conductor plate, so that the heat transfer member and the conductor plate are thermally coupled. The degree of coupling can be increased. On the other hand, when the electrodes of the light emitting diode chip are bonded to other members by bumps, a gap of about several tens of μm is formed between the light emitting diode and the other members. If the other member is a conductive layer that is formed on the conductor plate via an insulating layer, the light emitting diode chip and the conductor plate are separated by a dimension obtained by adding the thicknesses of the conductive layer and the insulating layer to this dimension. Since they are separated from each other, the dimension is 100 μm or more as a result. In such a case, the distance between the light emitting diode chip and the conductor plate becomes large, resulting in poor heat conduction. Therefore, the distance between the light emitting diode chip and the conductor plate is reduced by integrally providing the conductor plate with the heat transfer member.
【００４８】請求項４の発明は、請求項１または請求項
２の発明において、前記熱伝達部材が金属であるから、
導体板と発光ダイオードの間の熱伝導が良好になる。According to a fourth aspect of the invention, in the first or second aspect of the invention, the heat transfer member is a metal,
Good heat conduction between the conductor plate and the light emitting diode.
【００４９】請求項５の発明は、請求項１ないし請求項
４の発明において、前記導体板における前記発光ダイオ
ードチップの実装面とは異なる面側に前記導電層の一部
が外部回路への接続部として引き回されているから、別
に設けた回路基板に対して半田接合やカシメ接合によっ
て容易に接続することができる。According to a fifth aspect of the invention, in the first to fourth aspects of the invention, a part of the conductive layer is connected to an external circuit on a surface side of the conductor plate different from a mounting surface of the light emitting diode chip. Since it is routed as a part, it can be easily connected to a separately provided circuit board by soldering or caulking.
【００５０】請求項６の発明は、請求項４の発明におい
て、前記熱伝達部材が半田であるので、発光ダイオード
チップに対する熱伝達部材の接触状態が良好であり、発
光ダイオードチップと熱伝達部材との間の熱抵抗が小さ
くなり、結果的に発光ダイオードチップからの放熱効率
を高めることができる。According to the invention of claim 6, in the invention of claim 4, since the heat transfer member is solder, the contact state of the heat transfer member to the light emitting diode chip is good, and the light emitting diode chip and the heat transfer member are connected. The thermal resistance between them becomes small, and as a result, the heat dissipation efficiency from the light emitting diode chip can be improved.
【００５１】請求項７の発明は、請求項６の発明におい
て、前記発光ダイオードチップと前記導体板との対向面
間において前記電極と前記熱伝達部材との間に電気的な
絶縁性を有する障壁を設けたので、熱伝達部材として半
田のように導電性を有する低融点の材料を用いながら
も、半田の溶融時に発光ダイオードチップの電極と半田
とが電気的に接続されることが防止され、結果的に半田
を溶融させる加熱処理が容易になり、不良品の発生を防
止することができる。According to a seventh aspect of the invention, in the sixth aspect of the invention, a barrier having an electrically insulating property between the electrode and the heat transfer member between the facing surfaces of the light emitting diode chip and the conductor plate. Since the heat transfer member is provided with a conductive material having a low melting point such as solder, the electrodes of the light emitting diode chip and the solder are prevented from being electrically connected when the solder is melted. As a result, the heat treatment for melting the solder becomes easy, and the generation of defective products can be prevented.
【００５２】請求項８の発明は、請求項７の発明におい
て、前記障壁が紫外線硬化樹脂からなるものであり、障
壁を設けたことにより半田を溶融させる加熱処理が容易
になって不良品の発生を防止することができる。しか
も、障壁を紫外線硬化樹脂により形成するから障壁の成
形が容易である。According to an eighth aspect of the present invention, in the seventh aspect, the barrier is made of an ultraviolet curable resin, and the provision of the barrier facilitates heat treatment for melting the solder, resulting in defective products. Can be prevented. Moreover, since the barrier is formed of the ultraviolet curable resin, the barrier can be easily molded.
【図１】本発明の第１の実施の形態を示す要部断面図で
ある。FIG. 1 is a cross-sectional view of an essential part showing a first embodiment of the present invention.
【図２】同上の断面図である。FIG. 2 is a sectional view of the same.
【図３】同上の他例を示す要部断面図である。FIG. 3 is a sectional view of an essential part showing another example of the above.
【図４】本発明の第２の実施の形態を示す要部断面図で
ある。FIG. 4 is a cross-sectional view of an essential part showing a second embodiment of the present invention.
【図５】同上の断面図である。FIG. 5 is a sectional view of the same.
【図６】同上の他例を示す要部断面図である。FIG. 6 is a sectional view of an essential part showing another example of the above.
【図７】同上のさらに他例を示す要部断面図である。FIG. 7 is a cross-sectional view of an essential part showing still another example of the same.
【図８】同上の別例を示す要部断面図である。FIG. 8 is a sectional view of an essential part showing another example of the above.
【図９】同上のさらに別例を示す要部断面図である。FIG. 9 is a cross-sectional view of an essential part showing still another example of the same.
【図１０】本発明の第３の実施の形態を示す要部断面図
である。FIG. 10 is a cross-sectional view of an essential part showing a third embodiment of the present invention.
【図１１】同上の組立手順を示す工程図である。FIG. 11 is a process drawing showing the assembling procedure of the above.
【図１２】同上の他例を示す断面図である。FIG. 12 is a cross-sectional view showing another example of the above.
【図１３】同上のさらに他例を示す断面図である。FIG. 13 is a sectional view showing still another example of the above.
【図１４】同上の別例を示す断面図である。FIG. 14 is a cross-sectional view showing another example of the above.
【図１５】同上のさらに別例を示す要部断面図である。FIG. 15 is a cross-sectional view of an essential part showing still another example of the same.
【図１６】同上のまた他例を示す要部断面図である。FIG. 16 is a sectional view of an essential part showing another example of the above.
【図１７】本発明の第４の実施の形態を示す要部断面図
である。FIG. 17 is a main-portion cross-sectional view showing a fourth embodiment of the present invention.
【図１８】同上の組立手順を示す工程図である。FIG. 18 is a process drawing showing the assembling procedure of the above.
【図１９】従来例を示す要部断面図である。FIG. 19 is a sectional view of an essential part showing a conventional example.
【図２０】他の従来例を示す断面図である。FIG. 20 is a cross-sectional view showing another conventional example.
【図２１】さらに他の従来例を示す断面図である。FIG. 21 is a sectional view showing still another conventional example.
１ 配線基板 １ｄ 透孔 ２ 発光ダイオードチップ １１ 導体板 １１ａ 分離層 １１ｂ 凹所 １１ｃ 凹所 １２ 導電層 １３ 絶縁層 １４ 反射器 １５ 封止樹脂 １６ 熱伝達部材 １７ 接着剤 １８ 障壁 ２１ バンプ ２１ａ バンプ ２１ｂ バンプ ２２ 導電性ペースト ２３ 導電層 ２４ 絶縁板 ２４ａ 透孔 ２５ 接着剤 ２６ ボンディングワイヤ ３１ 配線基板 ３２ アンダーフィル樹脂 ３３ サブマウント ３３ａ 配線パターン ３４ リードフレーム ３５ パッケージ ４０ 発光素子 ４１ 樹脂含浸基材 ４２ 回路パターン ４３ 貫通孔 ４４ 凹部 ４５ 金属層 ４６ ダイボンドペースト ４７ ボンディングワイヤ 1 wiring board 1d through hole 2 Light emitting diode chip 11 Conductor plate 11a separation layer 11b recess 11c recess 12 Conductive layer 13 Insulation layer 14 reflector 15 Sealing resin 16 Heat transfer member 17 Adhesive 18 barriers 21 bump 21a bump 21b bump 22 Conductive paste 23 Conductive layer 24 insulating plate 24a through hole 25 adhesive 26 Bonding wire 31 wiring board 32 Underfill resin 33 submount 33a wiring pattern 34 lead frame 35 packages 40 light emitting element 41 Resin impregnated base material 42 circuit pattern 43 through hole 44 recess 45 metal layer 46 Die bond paste 47 Bonding wire
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 23/34 Ｈ０１Ｌ 23/40 Ｆ 23/36 23/36 Ｄ 23/373 23/30 Ｒ 23/40 23/36 Ｍ Ｃ (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 木村 秀吉 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 橋本 拓磨 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 塩濱 英二 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 4M109 AA01 BA03 CA10 EA15 GA01 5F036 AA01 BA23 BB08 BB21 BC05 BC08 BD01 BE09 5F041 AA33 AA43 AA44 DA03 DA04 DA09 DA19 DA33 DA34 DA36 DA43 FF11 5F044 KK01 KK05 LL07 LL17 RR10─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 23/34 H01L 23/40 F 23/36 23/36 D 23/373 23/30 R 23/40 23 / 36 MC (72) Inventor Masaru Sugimoto 1048, Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Works Co., Ltd. (72) Hideyoshi Kimura, 1048, Kadoma, Kadoma City, Osaka Matsushita Electric Works Co., Ltd. (72) Invention Person Takuma Hashimoto 1048, Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Works Co., Ltd. (72) Inventor Eiji Shiohama 1048, Kadoma, Kadoma City, Osaka Matsushita Electric Works Co., Ltd. F-term (reference) 4M109 AA01 BA03 CA10 EA15 GA01 5F036 AA01 BA23 BB08 BB21 BC05 BC08 BD01 BE09 5F041 AA33 AA43 AA44 DA03 DA04 DA09 DA19 DA33 DA34 DA36 DA43 FF11 5F044 KK01 KK05 LL07 LL17 RR10
Claims (8)
と、絶縁層を介して導体板に積層された導電層と、少な
くとも一方の電極が導電層にフェースダウン実装により
電気的に接続された発光ダイオードチップとを備え、発
光ダイオードと導体板との対向面間には絶縁層よりも熱
伝導率の高い熱伝達部材が介装されることを特徴とする
発光装置。1. A light emitting device in which a conductor plate having an insulating layer on at least one surface, a conductive layer laminated on the conductor plate through the insulating layer, and at least one electrode electrically connected to the conductive layer by face-down mounting. A light emitting device comprising a diode chip, and a heat transfer member having a higher thermal conductivity than an insulating layer is interposed between the opposing surfaces of the light emitting diode and the conductor plate.
に各別に設けられた導電層にそれぞれ接続されているこ
とを特徴とする請求項１記載の発光装置。2. The light emitting device according to claim 1, wherein each electrode of the light emitting diode is connected to a conductive layer provided separately for each electrode.
成されていることを特徴とする請求項１または請求項２
記載の発光装置。3. The heat transfer member is integrally formed with the conductor plate.
The light emitting device described.
とする請求項１または請求項２記載の発光装置。4. The light emitting device according to claim 1, wherein the heat transfer member is made of metal.
チップの実装面とは異なる面側に前記導電層の一部が外
部回路への接続部として引き回されていることを特徴と
する請求項１ないし請求項４のいずれか１項に記載の発
光装置。5. The part of the conductive layer is routed as a connection portion to an external circuit on a surface side of the conductor plate different from a mounting surface of the light emitting diode chip. The light emitting device according to claim 4.
とする請求項４記載の発光装置。6. The light emitting device according to claim 4, wherein the heat transfer member is solder.
との対向面間において前記電極と前記熱伝達部材との間
に電気的な絶縁性を有する障壁を設けたことを特徴とす
る請求項６記載の発光装置。7. A barrier having electrical insulation is provided between the electrode and the heat transfer member between the facing surfaces of the light emitting diode chip and the conductor plate. Light emitting device.
を特徴とする請求項７記載の発光装置。8. The light emitting device according to claim 7, wherein the barrier is made of an ultraviolet curable resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019260A JP4122784B2 (en) | 2001-09-19 | 2002-01-28 | Light emitting device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001285893 | 2001-09-19 | ||
| JP2001-285893 | 2001-09-19 | ||
| JP2002019260A JP4122784B2 (en) | 2001-09-19 | 2002-01-28 | Light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003168829A true JP2003168829A (en) | 2003-06-13 |
| JP4122784B2 JP4122784B2 (en) | 2008-07-23 |
Family
ID=26622546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002019260A Expired - Lifetime JP4122784B2 (en) | 2001-09-19 | 2002-01-28 | Light emitting device |
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| JP (1) | JP4122784B2 (en) |
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| KR20140092038A (en) * | 2013-01-15 | 2014-07-23 | 엘지이노텍 주식회사 | A light emitting device package |
| KR101984785B1 (en) * | 2013-01-15 | 2019-05-31 | 엘지이노텍 주식회사 | A light emitting device package |
| JP2019087695A (en) * | 2017-11-09 | 2019-06-06 | シチズン電子株式会社 | Light-emitting device |
| JP7027129B2 (en) | 2017-11-09 | 2022-03-01 | シチズン電子株式会社 | Light emitting device |
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