JP2002094122A - Light source and its manufacturing method - Google Patents

Light source and its manufacturing method

Info

Publication number
JP2002094122A
JP2002094122A JP2001114502A JP2001114502A JP2002094122A JP 2002094122 A JP2002094122 A JP 2002094122A JP 2001114502 A JP2001114502 A JP 2001114502A JP 2001114502 A JP2001114502 A JP 2001114502A JP 2002094122 A JP2002094122 A JP 2002094122A
Authority
JP
Japan
Prior art keywords
substrate
led chip
insulating member
light source
source device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001114502A
Other languages
Japanese (ja)
Other versions
JP4432275B2 (en
Inventor
Hideyoshi Kimura
秀吉 木村
Eiji Shiohama
英二 塩浜
Masaru Sugimoto
勝 杉本
Takuma Hashimoto
拓磨 橋本
Toshiyuki Suzuki
俊之 鈴木
Kazuya Nakagawa
和也 中川
Mitsuru Kobayashi
充 小林
Jiro Hashizume
二郎 橋爪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001114502A priority Critical patent/JP4432275B2/en
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to AT01274117T priority patent/ATE425556T1/en
Priority to PCT/JP2001/010561 priority patent/WO2002084750A1/en
Priority to EP01274117A priority patent/EP1387412B1/en
Priority to DE60137972T priority patent/DE60137972D1/en
Priority to US10/398,660 priority patent/US6874910B2/en
Priority to CNB018108806A priority patent/CN1212676C/en
Priority to TW090130969A priority patent/TW517402B/en
Publication of JP2002094122A publication Critical patent/JP2002094122A/en
Application granted granted Critical
Publication of JP4432275B2 publication Critical patent/JP4432275B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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Abstract

PROBLEM TO BE SOLVED: To provide a light source and its manufacturing method which improves luminous efficiency to increase the optical power and prolong the life and raises the mechanical strength. SOLUTION: The light source 1 comprises a board 3 having a thermal conductivity, an insulation member 4 bonded to one surface of the board 3, through- holes 6 passing through parts of the insulation member 4 facing the board 3, LED chips 2 mounted on exposed portions of the board 3 through the through- holes 6, expansions 4a inwardly projecting from the opening edges of the through-holes 6 at the board 3, a wiring pattern 8 provided on the insulation member 4 which electrically insulates the pattern 8 from the board 3, bonding wires 9 which electrically connect extending portions of the pattern 8 onto the expansions 4a to electrodes of the LED chips 2, and a translucent seal resin 10 filled in the through-holes 6 to seal the whole of the LEDs 2 and the bonding wires 9.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、発光ダイオードを
用いた光源装置及びその製造方法に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a light source device using a light emitting diode and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】この種の光源装置としては、図２５に示
すような砲弾型の発光ダイオードを用いたものが従来よ
り提供されており、発光ダイオードを単数で使用した
り、複数個の発光ダイオードを基板３０上にアレイ状に
配置して使用するものがあった。2. Description of the Related Art As a light source device of this type, a light source device using a bullet-shaped light emitting diode as shown in FIG. 25 has been conventionally provided. Were used in an array on the substrate 30.

【０００３】砲弾型の発光ダイオードは、金属製のリー
ドフレーム３１に設けた凹所３１ａ上にＬＥＤチップ２
を銀ぺーストやエポキシ系樹脂などのダイボンディング
ペースト７を用いてダイボンドし、ＬＥＤチップ２の上
面に設けた電極部分（図示せず）とリードフレーム３
１，３２との間を金などの金属細線からなるボンディン
グワイヤ９でワイヤボンドした後、透光性を有する封止
樹脂３３でリードフレーム３１，３２とＬＥＤチップ２
とボンディングワイヤ９とを封止して形成されている。[0003] A bullet-shaped light emitting diode is provided with a LED chip 2 on a recess 31 a provided in a metal lead frame 31.
Is die-bonded using a die bonding paste 7 such as silver paste or an epoxy resin, and an electrode portion (not shown) provided on the upper surface of the LED chip 2 and a lead frame 3.
1 and 32 are bonded by a bonding wire 9 made of a thin metal wire such as gold, and then the lead frames 31 and 32 and the LED chip 2 are sealed with a sealing resin 33 having translucency.
And the bonding wire 9 are sealed.

【０００４】ここで、封止樹脂３３には主としてエポキ
シ樹脂が用いられており、この封止樹脂３３には以下に
挙げる３つの機能がある。先ず第１に、封止樹脂３３に
は機械的衝撃から部品を保護したり、水分からＬＥＤチ
ップ２を保護する保護機能がある。また、ＬＥＤチップ
２の発光部の屈折率は約２．８程度と高いため、ＬＥＤ
チップ２表面と空気との界面では屈折率の差による全反
射が発生し、ＬＥＤチップ２の光取り出し効率が低いと
いう問題があるが、ＬＥＤチップ２の表面を屈折率が約
１．８程度のエポキシ樹脂で覆うことによって、ＬＥＤ
チップ２からの光取り出し効率を向上させる機能が封止
樹脂３３にはある。さらに、封止樹脂３３には、ＬＥＤ
チップ２から放射された光を封止樹脂３３表面のレンズ
効果によって集光又は拡散させるといった光制御機能が
ある。Here, an epoxy resin is mainly used as the sealing resin 33, and the sealing resin 33 has the following three functions. First, the sealing resin 33 has a protection function of protecting components from mechanical shock and protecting the LED chip 2 from moisture. Further, since the refractive index of the light emitting portion of the LED chip 2 is as high as about 2.8,
At the interface between the surface of the chip 2 and air, total reflection occurs due to the difference in the refractive index, and there is a problem that the light extraction efficiency of the LED chip 2 is low. LED covered by epoxy resin
The sealing resin 33 has a function of improving the light extraction efficiency from the chip 2. Further, the sealing resin 33 includes an LED.
There is a light control function of condensing or diffusing light emitted from the chip 2 by a lens effect on the surface of the sealing resin 33.

【０００５】また、リードフレーム３１，３２の機能と
しては、ＬＥＤチップ２をダイボンドする際の土台とな
ってＬＥＤチップ２を支持する機能と、ＬＥＤチップ２
がダイボンドされる凹所３１ａの周りを鏡面としてＬＥ
Ｄチップ２からの発光を効率良く前方へ配光させる機能
と、ＬＥＤチップ２の発熱を熱伝導によって基板３０な
どを通じて外部へ逃がす機能とがある。The functions of the lead frames 31 and 32 include a function of supporting the LED chip 2 as a base when the LED chip 2 is die-bonded, and a function of supporting the LED chip 2.
Is mirrored around the recess 31a where the die is bonded.
The LED chip 2 has a function of efficiently distributing light emitted from the D chip 2 to the front and a function of releasing heat generated by the LED chip 2 to the outside through the substrate 30 or the like by heat conduction.

【０００６】[0006]

【発明が解決しようとする課題】ところで、ＬＥＤチッ
プ２では、照明器具としての通常の使用温度領域におい
て、低温になるほど発光効率が高く、高温になるほど発
光効率が低下する。これは、温度上昇による格子振動の
増加に伴って電子とホールとの無輻射結合が増加するか
らである。発光ダイオードを用いる光源装置では、発熱
する部分は主としてＬＥＤチップ２であるから、ＬＥＤ
チップ２で発生した熱を速やかに外部に放熱し、ＬＥＤ
チップ２の温度を低下させることは、ＬＥＤチップ２の
発光効率を向上させる上で非常に重要な課題となる。By the way, in the LED chip 2, in a normal use temperature range as a lighting fixture, the luminous efficiency increases as the temperature decreases, and the luminous efficiency decreases as the temperature increases. This is because non-radiative coupling between electrons and holes increases with an increase in lattice vibration due to a temperature rise. In a light source device using a light emitting diode, the heat generating portion is mainly the LED chip 2, so that the
The heat generated by the chip 2 is quickly radiated to the outside, and the LED
Reducing the temperature of the chip 2 is a very important issue in improving the luminous efficiency of the LED chip 2.

【０００７】また、ＬＥＤチップ２から外部への放熱特
性を高めることによってＬＥＤチップ２自身の温度上昇
を抑制できるから、ＬＥＤチップ２に大きな順方向電流
を通電して使用することができ、ＬＥＤチップ２の光出
力を増大させることができる。さらに、放熱特性を高め
ることによって、ＬＥＤチップ２の寿命を延ばす効果も
得られる。In addition, since the temperature rise of the LED chip 2 itself can be suppressed by improving the heat radiation characteristics from the LED chip 2 to the outside, a large forward current can be supplied to the LED chip 2 for use. 2 light output can be increased. Further, the effect of extending the life of the LED chip 2 can be obtained by enhancing the heat radiation characteristics.

【０００８】尚、ＬＥＤチップ２の寿命が改善される理
由としては、以下に挙げる２つの理由が考えられる。一
般的な照明器具と同様に、ＬＥＤチップ２の寿命を、光
束が点灯初期の約７０％に低下した時点と定義すると、
赤色発光の発光ダイオードは約６万時間の寿命があると
考えられるが、例えばＬＥＤチップ２に定格電流以上の
順方向電流を印加して過負荷状態で使用すると、ＬＥＤ
チップ２自身の発熱によってＬＥＤチップ２の劣化が著
しく加速されてしまう。したがって、放熱特性を向上さ
せることにより、ＬＥＤチップ２の温度上昇が抑制さ
れ、ＬＥＤチップ２の寿命が短くなるのを防止すること
ができる。Incidentally, the following two reasons can be considered as reasons why the life of the LED chip 2 is improved. Similar to a general lighting fixture, if the life of the LED chip 2 is defined as the time when the luminous flux is reduced to about 70% of the initial lighting,
It is considered that the red light emitting diode has a life of about 60,000 hours. For example, when the LED chip 2 is used in an overload state by applying a forward current higher than the rated current to the LED chip 2,
The heat generated by the chip 2 itself significantly accelerates the deterioration of the LED chip 2. Therefore, by improving the heat radiation characteristics, a rise in the temperature of the LED chip 2 is suppressed, and the life of the LED chip 2 can be prevented from being shortened.

【０００９】また、青色発光ダイオードや、青色発光ダ
イオードを用い青色発光ダイオードの青色光を白色光に
変換して出力する白色発光ダイオードでは、従来の赤色
発光ダイオードに比べて放射光のエネルギーが高く、そ
のためＬＥＤチップ２を封止する封止樹脂３３が、ＬＥ
Ｄチップ２の放射光によって劣化し、褐色に呈色してし
まう。封止樹脂３３の呈色が始まると、青色系の光をよ
り吸収しやすくなり、封止樹脂３３の呈色がさらに加速
されるため、結果的にＬＥＤチップ２近傍の封止樹脂３
３が褐色に呈色してしまい、ＬＥＤチップ２自身は点灯
初期の光束を維持しているにも関わらず、封止樹脂３３
から外部に放射される光が著しく低下してしまう。この
ように封止樹脂３３が褐色に呈色することによって、青
色発光ダイオードや白色発光ダイオードの場合は、その
寿命が約６０００時間程度となり、赤色発光ダイオード
に比べて著しく短くなる。ところで、封止樹脂３３の呈
色反応は光化学反応ではあるが、封止樹脂３３の温度が
高くなると、呈色反応の反応速度が速くなることが一般
的に知られており、ＬＥＤチップ２から外部への放熱特
性を向上させることによって、ＬＥＤチップ２及び封止
樹脂３３の温度を低減し、ＬＥＤチップ２の発光による
封止樹脂３３の呈色反応を抑制することができる。Further, in a blue light emitting diode or a white light emitting diode that uses a blue light emitting diode to convert blue light of the blue light emitting diode into white light and outputs the white light, the energy of emitted light is higher than that of a conventional red light emitting diode. Therefore, the sealing resin 33 for sealing the LED chip 2 is LE
It is deteriorated by the radiation light of the D chip 2 and turns brown. When the coloration of the sealing resin 33 starts, blue light is more easily absorbed, and the coloration of the sealing resin 33 is further accelerated.
3 is colored brown, and the LED chip 2 itself maintains the initial luminous flux, but the sealing resin 33
The light radiated to the outside is greatly reduced. As described above, when the sealing resin 33 is colored brown, the lifetime of the blue light emitting diode or the white light emitting diode is about 6000 hours, which is significantly shorter than that of the red light emitting diode. Incidentally, the color reaction of the sealing resin 33 is a photochemical reaction, but it is generally known that as the temperature of the sealing resin 33 increases, the reaction speed of the color reaction increases. By improving the heat radiation characteristics to the outside, the temperature of the LED chip 2 and the sealing resin 33 can be reduced, and the color reaction of the sealing resin 33 due to light emission of the LED chip 2 can be suppressed.

【００１０】上述のように発光ダイオードを用いた光源
装置では、その発光効率の向上、光出力の増加、長寿命
化といった観点から、ＬＥＤチップ２より外部への放熱
特性を向上させることが非常に重要になる。しかしなが
ら、砲弾型の発光ダイオードでは、ＬＥＤチップ２の発
熱を逃がすための放熱経路が、リードフレーム３１を通
じて基板３０に逃がす経路と、封止樹脂３３を通じて空
気中に逃がす経路の２つであり、封止樹脂３３を通じて
放熱する経路ではエポキシ樹脂の熱伝導率が低いために
十分な放熱効果が得られない。したがって、リードフレ
ーム３１を通じて放熱する放熱経路が主になるが、リー
ドフレーム３１自体が細く、また放熱経路が７〜１０ｍ
ｍ程度と長いため、封止樹脂３３を通じて放熱する経路
よりは大きな放熱効果が得られるものの、十分な放熱効
果は期待できず、放熱特性を改善した光源装置を実現す
るのは困難であった。As described above, in the light source device using the light emitting diode, it is very difficult to improve the heat radiation characteristics from the LED chip 2 to the outside from the viewpoints of improving the luminous efficiency, increasing the light output, and extending the life. Becomes important. However, in the shell-type light emitting diode, there are two heat radiation paths for releasing heat generated by the LED chip 2, a path for releasing to the substrate 30 through the lead frame 31, and a path for releasing into the air through the sealing resin 33. In the path through which heat is radiated through the sealing resin 33, a sufficient heat radiation effect cannot be obtained because the thermal conductivity of the epoxy resin is low. Therefore, a heat radiation path for radiating heat through the lead frame 31 is mainly used, but the lead frame 31 itself is thin and the heat radiation path is 7 to 10 m.
Since the length is as long as about m, a heat radiation effect larger than the heat radiation path through the sealing resin 33 can be obtained, but a sufficient heat radiation effect cannot be expected, and it is difficult to realize a light source device with improved heat radiation characteristics.

【００１１】そこで、放熱特性を更に改善するために、
図２６に示すようにＬＥＤチップ２を基板３４に直接ダ
イボンドした光源装置も提案されている。基板３４は例
えばアルミニウムの薄板からなり、基板３４にプレス加
工を施すことによって凹所３４ａを形成し、基板３４の
表面に絶縁体薄膜３５を形成した後、凹所３４ａの底面
に形成された絶縁体薄膜３５上にＬＥＤチップ２をダイ
ボンドしている。そして、基板３４の表面に絶縁体膜層
３５を介して形成された配線パターン３６とＬＥＤチッ
プ２表面の電極との間をボンディングワイヤ９を介して
電気的に接続し、凹所３４ａ内に透光性を有する封止樹
脂３７を充填して形成される。Therefore, in order to further improve the heat radiation characteristics,
As shown in FIG. 26, a light source device in which the LED chip 2 is directly die-bonded to the substrate 34 has also been proposed. The substrate 34 is made of, for example, a thin aluminum plate. The recess 34 a is formed by pressing the substrate 34, an insulating thin film 35 is formed on the surface of the substrate 34, and the insulating film formed on the bottom surface of the recess 34 a is formed. The LED chip 2 is die-bonded on the body thin film 35. Then, the wiring pattern 36 formed on the surface of the substrate 34 via the insulator film layer 35 and the electrode on the surface of the LED chip 2 are electrically connected via the bonding wire 9, and the wiring is formed in the recess 34 a. It is formed by filling a sealing resin 37 having optical properties.

【００１２】この光源装置では、ＬＥＤチップ２の発熱
は、ＬＥＤチップ２からダイボンディングペースト７→
絶縁体膜層３５→基板３４の経路で放熱され、基板３４
に伝わった熱は基板３４全体に拡散していくため、砲弾
型の発光ダイオードに比べて放熱経路が短く、放熱性が
非常に高くなっている。しかしながら、この放熱経路に
おいても、放熱性を阻害する構成要素としてダイボンデ
ィングペースト７と絶縁体膜層３５とが存在する。ダイ
ボンディングペースト７は樹脂製であり、ペースト自体
の熱伝導係数は小さいものの、ペーストの厚みは５μｍ
以下と薄いため、ダイボンディングペースト７が放熱性
に与える影響は小さいものと考えられる。一方、絶縁体
膜層３５は樹脂やセラッミックスフィラーを分散させた
樹脂などから形成されており、金属に比較して絶縁体膜
層３５自体の熱伝導係数が小さく、また絶縁体膜層３５
の厚みも３００μｍ程度と厚くなっているため、放熱性
に与える影響が大きくなっている。而して、図２６に示
す構造の光源装置では、砲弾型ＬＥＤを用いた光源装置
に比べて、ＬＥＤチップ２からの放熱性は高くなってい
るものの、放熱経路に絶縁体膜層３５が存在しているた
めに、十分な放熱性が得られなかった。In this light source device, the heat generated by the LED chip 2 is transferred from the LED chip 2 to the die bonding paste 7 →
Heat is radiated along the path from the insulator film layer 35 to the substrate 34,
Since the heat transmitted to the substrate is diffused throughout the substrate 34, the heat radiation path is shorter than that of the shell-type light emitting diode, and the heat radiation is extremely high. However, also in this heat dissipation path, the die bonding paste 7 and the insulator film layer 35 exist as components that inhibit heat dissipation. The die bonding paste 7 is made of resin, and although the heat conductivity of the paste itself is small, the thickness of the paste is 5 μm.
It is considered that the influence of the die bonding paste 7 on the heat radiation is small because it is as thin as the following. On the other hand, the insulator film layer 35 is formed of a resin, a resin in which ceramic filler is dispersed, or the like.
Is also as thick as about 300 μm, so that the effect on heat dissipation is increased. Thus, in the light source device having the structure shown in FIG. 26, although the heat radiation from the LED chip 2 is higher than that of the light source device using the cannonball-shaped LED, the insulator film layer 35 exists in the heat radiation path. As a result, sufficient heat dissipation was not obtained.

【００１３】また、ＬＥＤチップ２からの放熱におい
て、絶縁体膜層３５の影響を低減する目的で、基板３４
の表面から部分的に絶縁体膜層３５を除去し、露出した
基板３４にＬＥＤチップ２を直接ダイボンドした光源装
置も提案されている。しかしながら、絶縁体膜層３５を
部分的に除去する方法としては、エンドミルなどによる
切削加工によるものであり、露出した基板３４の表面は
切削傷が著しく、実測した結果、プラスマイナス２０μ
ｍ程度の平滑度であった。ところで、ＬＥＤチップ２を
ダイボンドする場合、ダイボンド剤の種類にもよるが、
ＬＥＤチップ２を実装する面にはプラスマイナス５μｍ
程度の平滑度が必要になるため、切削加工した面にＬＥ
Ｄチップ２を実装するのは難しく、露出した基板３４の
表面にＬＥＤチップ２を実装するのは難しかった。Further, in order to reduce the influence of the insulator film layer 35 on the heat radiation from the LED chip 2,
There is also proposed a light source device in which the insulator film layer 35 is partially removed from the surface of the LED chip 2 and the LED chip 2 is directly die-bonded to the exposed substrate 34. However, as a method of partially removing the insulator film layer 35, a cutting process using an end mill or the like is used, and the surface of the exposed substrate 34 has a remarkable cutting flaw.
The degree of smoothness was about m. By the way, when the LED chip 2 is die-bonded, it depends on the type of the die bonding agent.
Plus or minus 5 μm on the surface where LED chip 2 is mounted
Since a certain degree of smoothness is required, LE
It was difficult to mount the D chip 2, and it was difficult to mount the LED chip 2 on the exposed surface of the substrate 34.

【００１４】また、図２６に示す光源装置では、絶縁体
膜層３５の上面に配線パターン３６が形成されており、
ボンディングワイヤ９の一端は配線パターン３６に接続
されているから、ＬＥＤチップ２を封止樹脂３７で封止
したとしても、ボンディングワイヤ９の一部が封止樹脂
３７から外側に露出することになり、機械的衝撃に対し
てボンディングワイヤ９の強度が著しく低下するという
問題がある。そこで、封止樹脂３７から外側に露出して
いるボンディングワイヤ９の部位を保護するために、封
止樹脂３７から露出しているボンディングワイヤ９の部
位を別途樹脂封止することも考えられるが、同じ樹脂を
用いて樹脂封止したとしても、２回に分けて樹脂封止を
行った場合は２つの樹脂の界面部分に応力が残存するた
め、点灯時に発生するＬＥＤチップ２の発熱によって応
力が増大し、界面部分でボンディングワイヤ９が断線す
る虞もある。特に青色発光のＬＥＤチップ２を用いて白
色発光を得るために、封止樹脂３７に蛍光体などの粉体
を分散させている場合は、封止樹脂３７の上から樹脂封
止された封止樹脂との間に熱膨張率の差が生じ、界面部
分でボンディングワイヤ９が断線する可能性が増大する
という問題もあった。In the light source device shown in FIG. 26, a wiring pattern 36 is formed on the upper surface of the insulator film layer 35.
Since one end of the bonding wire 9 is connected to the wiring pattern 36, even if the LED chip 2 is sealed with the sealing resin 37, a part of the bonding wire 9 is exposed to the outside from the sealing resin 37. In addition, there is a problem that the strength of the bonding wire 9 is significantly reduced due to mechanical shock. Therefore, in order to protect the portion of the bonding wire 9 exposed to the outside from the sealing resin 37, the portion of the bonding wire 9 exposed from the sealing resin 37 may be separately resin-sealed. Even if the same resin is used to seal the resin, if the resin is sealed twice, the stress remains at the interface between the two resins. The bonding wire 9 may be broken at the interface. In particular, when powder such as a phosphor is dispersed in the sealing resin 37 in order to obtain white light emission using the blue light emitting LED chip 2, the sealing resin 37 is sealed from above the sealing resin 37. There is also a problem that a difference in the coefficient of thermal expansion is generated between the resin and the resin, and the possibility that the bonding wire 9 is broken at the interface is increased.

【００１５】本発明は上記問題点に鑑みて為されたもの
であり、その目的とするところは、発光効率を向上させ
て光出力を増大させ、長寿命化を図ると共に、機械的強
度を高めた光源装置及びその製造方法を提供することに
ある。The present invention has been made in view of the above problems, and has as its object to improve the luminous efficiency, increase the light output, extend the life, and increase the mechanical strength. And a method of manufacturing the same.

【００１６】[0016]

【課題を解決するための手段】上記目的を達成するため
に、請求項１の発明では、熱伝導性を有する基板と、基
板の少なくとも一方の面に配設された絶縁部材と、基板
と対向する絶縁部材の部位に絶縁部材を貫通して設けら
れた孔と、この孔から露出する基板の部位に対向させ且
つ熱結合させて配置されたＬＥＤチップと、絶縁部材に
設けられ絶縁部材によって基板と電気的に絶縁された配
線部を含む給電部と、給電部とＬＥＤチップの電極との
間を電気的に接続する接続部材と、孔内に充填されＬＥ
Ｄチップ及び接続部材の全体を封止する透光性を有する
封止材料とを備えて成ることを特徴とし、ＬＥＤチップ
は絶縁部材に設けた孔から露出する基板の部位に対向さ
せ且つ熱結合させて配置されているので、熱伝導性を有
する基板を介してＬＥＤチップの発熱を放出することが
でき、放熱性を向上させた光源装置を実現できる。した
がって、ＬＥＤチップの温度上昇が抑制され、温度上昇
による発光効率の低下を防止することができる。しかも
ＬＥＤチップの温度上昇が低減されるから、より大きな
順方向電流をＬＥＤチップに印加して、ＬＥＤチップの
光出力を増大させることもでき、またＬＥＤチップや封
止材料の熱的な劣化が低減され、長寿命化が図れる。さ
らに、孔内に充填された封止材料によってＬＥＤチップ
及び接続部材の全体を封止しており、ＬＥＤチップと給
電部とを電気的に接続する接続部材として金属線を用い
た場合にも、樹脂の界面で発生する応力によって金属線
が断線する虞はなく、機械的強度を向上させることがで
きる。In order to achieve the above object, according to the first aspect of the present invention, a substrate having thermal conductivity, an insulating member provided on at least one surface of the substrate, and a substrate facing the substrate are provided. A hole provided through the insulating member at a portion of the insulating member to be provided, an LED chip disposed to be thermally coupled to a portion of the substrate exposed from the hole, and a substrate provided at the insulating member by the insulating member. A power supply portion including a wiring portion electrically insulated from the power supply portion, a connection member for electrically connecting the power supply portion and an electrode of the LED chip, and a LE filled in the hole.
A light-transmitting sealing material for sealing the entirety of the D chip and the connection member, wherein the LED chip faces the portion of the substrate exposed from the hole provided in the insulating member and is thermally bonded. Since the LED chips are arranged so as to emit heat from the LED chips through a substrate having thermal conductivity, a light source device with improved heat dissipation can be realized. Therefore, the temperature rise of the LED chip is suppressed, and a decrease in the luminous efficiency due to the temperature rise can be prevented. In addition, since the temperature rise of the LED chip is reduced, a larger forward current can be applied to the LED chip to increase the light output of the LED chip, and the thermal deterioration of the LED chip and the sealing material can be reduced. It is reduced and the life can be extended. Furthermore, even when the entirety of the LED chip and the connection member is sealed with a sealing material filled in the hole, and a metal wire is used as a connection member for electrically connecting the LED chip and the power supply unit, There is no danger that the metal wire will break due to the stress generated at the resin interface, and the mechanical strength can be improved.

【００１７】請求項２の発明では、請求項１の発明にお
いて、ＬＥＤチップに接続部材を介して電気的に接続さ
れる配線部の部位は孔内に配置されており、絶縁部材に
おける基板と反対側の面よりも基板側に位置することを
特徴とし、請求項１の発明と同様、封止材料によってＬ
ＥＤチップ及び接続部材の全体を封止することができ、
ＬＥＤチップと給電部とを電気的に接続する接続部材と
して金属線を用いた場合にも、樹脂の界面で発生する応
力によって金属線が断線する虞はなく、機械的強度を向
上させることができる。According to a second aspect of the present invention, in the first aspect of the present invention, the portion of the wiring portion electrically connected to the LED chip via the connecting member is disposed in the hole, and is opposite to the substrate of the insulating member. Characterized in that it is located closer to the substrate than the surface on the side, and as in the invention of claim 1, L
The entire ED chip and connection members can be sealed,
Even when a metal wire is used as a connection member for electrically connecting the LED chip and the power supply unit, there is no possibility that the metal wire is disconnected due to the stress generated at the interface of the resin, and the mechanical strength can be improved. .

【００１８】請求項３の発明では、請求項１の発明にお
いて、ＬＥＤチップに接続部材を介して電気的に接続さ
れる配線部の部位は孔内に配置されており、封止材料は
孔の開口付近まで充填されたことを特徴とし、封止材料
の表面が孔の開口付近にくるまで封止材料を充填するこ
とによって、封止材料の充填量を略一定とすることがで
き、品質のばらつきを抑制できる。According to a third aspect of the present invention, in the first aspect of the present invention, the portion of the wiring portion electrically connected to the LED chip via the connecting member is disposed in the hole, and the sealing material is formed in the hole. It is characterized by being filled to the vicinity of the opening, and by filling the sealing material until the surface of the sealing material comes to the vicinity of the opening of the hole, the filling amount of the sealing material can be made substantially constant, and the quality can be improved. Variation can be suppressed.

【００１９】請求項４の発明では、請求項１の発明にお
いて、絶縁部材に設けた孔の基板側の開口縁に内側に突
出する張出部を設け、この張出部に配線部の少なくとも
一部を配置し、張出部に配置された配線部の部位にＬＥ
Ｄチップの電極を電気的に接続しており、絶縁部材側に
突出し絶縁部材に設けた孔内に挿入される突台部を基板
に設け、この突台部にＬＥＤチップを対向させ且つ熱結
合させて配置したことを特徴とし、基板に突台部を設け
ることによって、突台部の高さ分だけ張出部の厚み寸法
を厚くすることができるから、張出部の加工を容易に行
え、且つ、張出部の厚み寸法を厚くすることによって、
張出部の剛性を高くし、基板と絶縁部材とを接合する際
に張出部と基板との間に隙間ができるのを防止できる。According to a fourth aspect of the present invention, in the first aspect of the present invention, an overhanging portion is provided at an opening edge on the substrate side of the hole provided in the insulating member, and at least one of the wiring portions is provided at the overhanging portion. Part, and LE on the part of the wiring part arranged on the overhang part.
An electrode of the D chip is electrically connected, and a protruding portion that protrudes toward the insulating member and is inserted into a hole provided in the insulating member is provided on the substrate. The protruding part can be thickened by the height of the protruding part by providing the protruding part on the substrate, making it easy to process the protruding part. And, by increasing the thickness of the overhang,
By increasing the rigidity of the overhang portion, it is possible to prevent a gap from being formed between the overhang portion and the substrate when joining the substrate and the insulating member.

【００２０】請求項５の発明では、請求項４の発明にお
いて、上記接続部材は金属線からなり、基板及び絶縁部
材の接合方向において、金属線の一端が接続されるＬＥ
Ｄチップの部位と、金属線の他端が接続される配線部の
部位の高さを略同じ高さとしたことを特徴とし、ＬＥＤ
チップと配線部との間を電気的に接続する金属線の長さ
を短くできるから、金属線の機械的強度を高くでき、ま
たＬＥＤチップと配線部の高さを略同じ高さとすること
により、ボンディング作業を容易に行うことができる。According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the connection member is made of a metal wire, and one end of the metal wire is connected to one end of the metal wire in the joining direction of the substrate and the insulating member.
Wherein the height of the part of the D chip and the part of the wiring part to which the other end of the metal wire is connected are substantially the same,
Since the length of the metal wire that electrically connects the chip and the wiring portion can be shortened, the mechanical strength of the metal wire can be increased, and the height of the LED chip and the wiring portion can be made approximately the same height. In addition, the bonding operation can be easily performed.

【００２１】請求項６の発明では、請求項４の発明にお
いて、基板及び絶縁部材の接合方向において、ＬＥＤチ
ップが実装される突台部と、ＬＥＤチップに電気的に接
続される配線部の部位の高さを略同じ高さとしたことを
特徴とし、ＬＥＤチップから放射される光が配線部に遮
光されることはなく、光のけられを少なくして、光の取
り出し効率を高めることができる。According to a sixth aspect of the present invention, in the fourth aspect of the present invention, in the joining direction of the substrate and the insulating member, a projecting portion on which the LED chip is mounted and a portion of the wiring portion electrically connected to the LED chip. The height of the LED chip is substantially the same as that of the LED chip. Light emitted from the LED chip is not blocked by the wiring portion, so that light leakage is reduced and light extraction efficiency can be increased. .

【００２２】請求項７の発明では、請求項４の発明にお
いて、突台部は、基板における絶縁部材と反対側の面か
ら打ち出し加工を行って凹所を形成することにより、基
板における絶縁部材側の面に打ち出されたことを特徴と
し、打ち出し加工を行うことによって突台部を形成して
いるので、切削加工により突台部を形成する場合に比べ
て加工費用を低減できる。また、基板と絶縁部材とを接
着剤で貼り合わせた場合、接着剤の熱収縮によって基板
全体が絶縁部材側に反ってしまうが、打ち出し加工を行
って凹所を形成することにより、基板全体が絶縁部材と
反対側に反るので、接着材の熱収縮によって発生する基
板の反りを相殺し、全体として基板が反るのを防止でき
る。According to a seventh aspect of the present invention, in the fourth aspect of the present invention, the protruding portion is formed by punching out a surface of the substrate opposite to the insulating member to form a recess, thereby forming a recess on the insulating member side of the substrate. Since the protrusion is formed by performing the punching process, the processing cost can be reduced as compared with the case where the protrusion is formed by cutting. Also, when the substrate and the insulating member are bonded with an adhesive, the entire substrate warps toward the insulating member due to the heat shrinkage of the adhesive, but the entire substrate is formed by performing a punching process to form a recess. Since the substrate is warped to the opposite side to the insulating member, the warpage of the substrate caused by the heat shrinkage of the adhesive is offset, and the warp of the substrate as a whole can be prevented.

【００２３】請求項８の発明では、請求項４の発明にお
いて、基板を、孔に連通する連通孔が形成されたベース
板と、連通孔内に取り付けられ先端が絶縁部材側に突出
する突起部とで構成し、突起部の先端により突台部を構
成したことを特徴とし、ベース板の孔に突起部を挿入
し、突起部の先端を絶縁部材側に突出させることによっ
て突台部を形成しているので、突台部を切削加工により
形成する場合に比べて、突台部の加工を容易に行うこと
ができる。According to an eighth aspect of the present invention, in the fourth aspect of the present invention, the base plate is provided with a communication hole communicating with the hole, and the projection is mounted in the communication hole and the tip of which protrudes toward the insulating member. The protruding portion is formed by inserting the protruding portion into the hole of the base plate, and the protruding portion protrudes toward the insulating member side to form the protruding portion. Therefore, the processing of the abutment can be performed more easily than in the case where the abutment is formed by cutting.

【００２４】請求項９の発明では、請求項４の発明にお
いて、孔と突台部との間に隙間を設けたことを特徴と
し、基板と絶縁部材とを接着剤で貼り合わせた場合、基
板と絶縁部材との接合面から余分な接着剤がはみ出し、
はみ出した接着剤によってＬＥＤチップの光が遮光され
たり、ＬＥＤチップを実装できなくなる虞があるが、は
み出した接着剤は孔と突台部との間に設けた隙間に溜ま
るので、接着剤が突台部の上面まで這い上がってくるこ
とはなく、はみ出した接着剤によってＬＥＤチップの光
が遮光されたり、ＬＥＤチップを実装できなくなるのを
防止できる。In a ninth aspect of the present invention, in the fourth aspect of the present invention, a gap is provided between the hole and the protruding portion, and when the substrate and the insulating member are bonded with an adhesive, Extra adhesive protrudes from the joint surface between the
The protruding adhesive may block the light of the LED chip or make it impossible to mount the LED chip. It does not crawl up to the upper surface of the pedestal portion, so that it is possible to prevent the light of the LED chip from being blocked by the protruding adhesive or preventing the LED chip from being mounted.

【００２５】請求項１０の発明では、請求項１乃至９の
発明において、基板と絶縁部材との位置決めを行うため
の位置決め手段を基板と絶縁部材との接合面に設けたこ
とを特徴とし、位置決め手段により基板と絶縁部材との
位置決めを行うことができ、基板と絶縁部材との接合作
業を容易に行える。According to a tenth aspect of the present invention, in any one of the first to ninth aspects, a positioning means for positioning the substrate and the insulating member is provided on a joint surface between the substrate and the insulating member. By this means, the substrate and the insulating member can be positioned, and the joining operation between the substrate and the insulating member can be easily performed.

【００２６】請求項１１の発明では、請求項１乃至９の
発明において、基板と絶縁部材との接合面に接合に用い
る接着剤の溜まり部を絶縁部材の孔の周りに設けたこと
を特徴とし、基板と絶縁部材とを接着剤で貼り合わせた
場合、基板と絶縁部材との接合面から余分な接着剤がは
み出し、はみ出した接着剤によってＬＥＤチップの光が
遮光されたり、ＬＥＤチップを実装できなくなる虞があ
るが、接合時に余分な接着剤は溜まり部に溜まるため、
接着剤のはみ出しを防止できる。また、基板と絶縁部材
との接合面に接着剤が不足している部分があると、この
部分にできる隙間から封止材料が漏れ出す虞があるが、
余分な接着剤を溜める溜まり部が絶縁部材に設けた孔の
周りに設けられ、溜まり部に溜まった余分な接着剤は孔
から露出する基板の部位を囲むようにして配置されるの
で、溜まり部に溜まった接着剤が封止材料をせき止める
堰の役割を果たして、封止材料が漏れ出すのを防止でき
る。According to an eleventh aspect of the present invention, in the first to ninth aspects of the present invention, a reservoir for an adhesive used for bonding is provided around the hole of the insulating member on the bonding surface between the substrate and the insulating member. When the substrate and the insulating member are bonded together with an adhesive, the excess adhesive protrudes from the joint surface between the substrate and the insulating member, and the protruding adhesive blocks light from the LED chip or mounts the LED chip. There is a possibility that it will disappear, but excess adhesive will collect in the pool at the time of joining,
The adhesive can be prevented from protruding. Further, if there is a portion where the adhesive is insufficient on the bonding surface between the substrate and the insulating member, there is a possibility that the sealing material leaks from a gap formed in this portion,
A pool portion for storing excess adhesive is provided around the hole provided in the insulating member, and the excess adhesive stored in the pool portion is disposed so as to surround the portion of the substrate exposed from the hole, so that the pool portion accumulates in the pool portion. The adhesive acts as a weir for damping the sealing material, thereby preventing leakage of the sealing material.

【００２７】請求項１２の発明では、請求項１の発明に
おいて、上記給電部は導電性材料により形成された基板
を含み、基板とＬＥＤチップの電極とを電気的に接続し
たことを特徴とし、基板そのものを給電部としており、
ＬＥＤチップの一方の電極を基板に接続するとともに、
ＬＥＤチップの他方の電極を配線部に接続することによ
って、ＬＥＤチップに給電することができるから、絶縁
部材の表面に形成する配線部が１回路分で済むという利
点がある。また、ＬＥＤチップに給電するための回路の
一部を基板が担っているので、回路を基板側に容易に引
き出すことができる。According to a twelfth aspect of the present invention, in the first aspect, the power supply section includes a substrate formed of a conductive material, and the substrate and the electrode of the LED chip are electrically connected. The board itself is used as the power supply,
While connecting one electrode of the LED chip to the substrate,
By connecting the other electrode of the LED chip to the wiring portion, power can be supplied to the LED chip. Therefore, there is an advantage that only one circuit portion is formed on the surface of the insulating member. Further, since a part of the circuit for supplying power to the LED chip is carried by the substrate, the circuit can be easily drawn to the substrate side.

【００２８】請求項１３の発明では、請求項１２の発明
において、上記基板に、互いに電気的に絶縁された複数
の領域を設けたことを特徴としている。ところで、一枚
の基板に複数のＬＥＤチップが実装される場合、一枚の
基板が互いに電気的に絶縁された複数の領域に分割され
ていないと、全てのＬＥＤチップが並列に接続されるこ
とになる。ここで、ＬＥＤチップは個体ごとに駆動電圧
が若干異なるため、複数のＬＥＤチップが並列に接続さ
れると、駆動電圧が最も低いＬＥＤチップに多大な電流
が流れて、ＬＥＤチップが破損する虞がある。そこで、
複数のＬＥＤチップに流れる電流を均等にするために、
個々のＬＥＤチップ毎に電流制限用の抵抗を直列接続す
る方法が考えられるが、ＬＥＤチップの数だけ電流制限
用の抵抗が必要になり、各抵抗で消費される電力ロスが
増大する。それに対して本発明では、基板に、互いに電
気的に絶縁された複数の領域を設けており、各領域にそ
れぞれＬＥＤチップを実装し、各領域に実装されたＬＥ
Ｄチップを直列に接続すれば、個々のＬＥＤチップに流
れる電流値を略一定にすることができ、且つ、直列接続
された複数のＬＥＤチップに対して電流制限用の抵抗を
１個接続すれば、各ＬＥＤチップに流れる電流を制限で
きるから、電流制限用の抵抗で消費される電力ロスを小
さくできる。According to a thirteenth aspect, in the twelfth aspect, the substrate is provided with a plurality of regions that are electrically insulated from each other. By the way, when a plurality of LED chips are mounted on one substrate, if one substrate is not divided into a plurality of regions electrically insulated from each other, all the LED chips may be connected in parallel. become. Here, since the driving voltage of each LED chip is slightly different for each individual, when a plurality of LED chips are connected in parallel, a large amount of current flows to the LED chip having the lowest driving voltage, and the LED chip may be damaged. is there. Therefore,
In order to equalize the current flowing through multiple LED chips,
A method of connecting a current limiting resistor in series for each LED chip is conceivable. However, as many current limiting resistors as the number of LED chips are required, power loss consumed by each resistor increases. On the other hand, in the present invention, a plurality of regions that are electrically insulated from each other are provided on the substrate, and an LED chip is mounted on each region, and the LE mounted on each region is mounted.
If the D chips are connected in series, the current value flowing through each LED chip can be made substantially constant, and if one current limiting resistor is connected to a plurality of LED chips connected in series. Since the current flowing through each LED chip can be limited, the power loss consumed by the current limiting resistor can be reduced.

【００２９】請求項１４の発明では、請求項１の発明に
おいて、封止材料の表面を、ＬＥＤチップの発光を所望
の方向に配光するレンズ形状としたことを特徴とし、封
止材料の表面をレンズ形状としたことにより、別途レン
ズを設けることなく、ＬＥＤチップの発光を所望の方向
に配光することができる。According to a fourteenth aspect of the present invention, in the first aspect of the present invention, the surface of the sealing material has a lens shape for distributing light emitted from the LED chip in a desired direction. Is formed in a lens shape, the light emission of the LED chip can be distributed in a desired direction without providing a separate lens.

【００３０】請求項１５の発明では、請求項１の発明に
おいて、孔の側壁にＬＥＤチップの発光を反射して所望
の方向に配光する反射部を設けたことを特徴とし、反射
部によってＬＥＤチップの光を反射して所望の方向へ配
光することにより、光の取り出し効率を高めることがで
きる。According to a fifteenth aspect of the present invention, in the first aspect of the present invention, a reflecting portion is provided on a side wall of the hole to reflect light emitted from the LED chip and distribute light in a desired direction. By reflecting the light from the chip and distributing the light in a desired direction, the light extraction efficiency can be increased.

【００３１】請求項１６の発明では、請求項１５の発明
において、上記反射部を配線部で兼用したことを特徴と
し、配線部が反射部を兼用することにより、絶縁部材の
表面に形成される配線部及び反射部のパターンを簡素化
できる。According to a sixteenth aspect of the present invention, in accordance with the fifteenth aspect of the present invention, the reflective portion is also used as a wiring portion, and the wiring portion is formed on the surface of the insulating member by also using the reflective portion. The patterns of the wiring section and the reflection section can be simplified.

【００３２】請求項１７の発明では、請求項１５の発明
において、上記接続部材は金属線からなり、金属線の延
びる方向に配線部を配設したことを特徴とし、ＬＥＤチ
ップからの光は金属線によって遮光されるが、金属線の
影となる部分に配線部を配置しているので、配線部以外
の部位に形成された反射部によって、ＬＥＤチップから
の光を所望の方向に配光することができる。According to a seventeenth aspect, in the fifteenth aspect, the connection member is made of a metal wire, and a wiring portion is provided in a direction in which the metal wire extends. Although the light is shielded by the line, since the wiring portion is arranged in a portion that becomes a shadow of the metal wire, the light from the LED chip is distributed in a desired direction by the reflection portion formed in a portion other than the wiring portion. be able to.

【００３３】請求項１８の発明では、請求項１の発明に
おいて、封止材料は、ＬＥＤチップから放射された光の
少なくとも一部を所定の光色に変換する光色変換機能を
有することを特徴とし、封止材料によって光色が変換さ
れた光と、ＬＥＤチップからの光とを混色することによ
って、所望の光色の光を得ることができる。According to an eighteenth aspect, in the first aspect, the sealing material has a light color conversion function of converting at least a part of light emitted from the LED chip into a predetermined light color. Then, light of a desired light color can be obtained by mixing the light whose light color has been converted by the sealing material with the light from the LED chip.

【００３４】請求項１９の発明では、請求項１８の発明
において、封止材料の表面は、絶縁部材における基板と
反対側の面よりも基板側に位置し、孔の周壁にＬＥＤチ
ップの発光を反射して所望の方向に配光する反射部を設
けたことを特徴とし、ＬＥＤチップからの光は封止材料
を通過することによって分散され、完全拡散配光となっ
ているので、配光制御しやすくなっており、反射部によ
って所望の方向に配光することができる。According to a nineteenth aspect, in the eighteenth aspect, the surface of the sealing material is located closer to the substrate than the surface of the insulating member opposite to the substrate, and the peripheral wall of the hole emits light from the LED chip. It is characterized by providing a reflector that reflects and distributes light in a desired direction. Light from the LED chip is dispersed by passing through the encapsulating material, and is a completely diffused light distribution. The light can be distributed in a desired direction by the reflection unit.

【００３５】請求項２０の発明では、請求項１の発明に
おいて、配線部の一部を基板側に向かって延伸し、この
延伸された部分で外部接続端子を構成することを特徴と
し、配線部の一部を基板側に向かって延伸し、この延伸
された部位を外部接続端子としているので、基板側から
配線部への給電を容易に行うことができる。なお、配線
部の一部を基板側に向かって延伸させる形態としては種
々考えられるが、例えば絶縁部材の端部に沿って配線部
を基板側に延伸したり、絶縁部材にスルーホールを形成
し、このスルーホール内に導電性材料を充填することに
よって配線部を基板側に延伸することが考えられる。ま
た基板側に向かって延伸する配線部の長さも必要に応じ
て決定され、絶縁部材の途中まで又は基板側の面まで延
伸しても良いし、基板側の面に一部を回り込ませるよう
にしても良いし、また基板の向こう側まで突出するよう
にしても良い。According to a twentieth aspect of the present invention, in the first aspect, a part of the wiring portion is extended toward the substrate, and the extended portion constitutes an external connection terminal. Is extended toward the substrate side and the extended portion is used as an external connection terminal, so that power can be easily supplied from the substrate side to the wiring portion. Note that various forms are possible for extending a part of the wiring portion toward the substrate side. It is conceivable that the wiring portion extends toward the substrate by filling the through hole with a conductive material. In addition, the length of the wiring portion extending toward the substrate side is also determined as necessary, and may be extended to the middle of the insulating member or the surface on the substrate side, or may be partially wrapped around the surface on the substrate side. Or it may be made to protrude to the other side of the substrate.

【００３６】請求項２１の発明では、請求項２０の発明
において、上記配線部の一部が、絶縁部材における基板
との対向面まで延伸されたことを特徴とし、配線部の一
部を基板との対向面まで延伸させているので、この延伸
された部分に対して容易に給電することができる。例え
ば、基板と嵌合する穴の形成された器具本体にこの光源
装置を実装する場合、配線部の一部を絶縁部材における
基板との対向面まで延伸しているので、器具本体の穴に
基板部分を嵌合すれば、器具本体に形成された配線部と
光源装置の配線部との電気的接続を容易に行うことがで
き、さらに基板部分を穴内に嵌め込んで器具本体と接触
させるようにすれば、放熱性が向上する。According to a twenty-first aspect of the present invention, in the twentieth aspect, a part of the wiring part is extended to a surface of the insulating member facing the substrate, and a part of the wiring part is connected to the substrate. , It is possible to easily supply power to the stretched portion. For example, when this light source device is mounted on a fixture body having a hole to be fitted with a board, a part of the wiring portion extends to a surface of the insulating member facing the board, so that the board is inserted into the hole of the fixture body. If the parts are fitted, the electrical connection between the wiring part formed on the fixture body and the wiring part of the light source device can be easily made, and furthermore, the board part is fitted into the hole so as to make contact with the fixture body. If it does, heat dissipation will improve.

【００３７】請求項２２の発明では、請求項２０又は２
１の発明において、絶縁部材の一部を基板側に向かって
延伸し、この延伸された部分の先端を、基板における絶
縁部材と反対側の面と略面一にしたことを特徴とし、絶
縁部材の基板側に延伸された部位に器具本体の表面に載
置して光源装置を器具本体に実装する際に、絶縁部材の
延伸された部位が基板における絶縁部材と反対側の面と
略面一になっているので、絶縁部材を器具本体の表面に
載置するだけで、基板が器具本体の表面に接触するか
ら、ＬＥＤチップの発熱が基板を介して器具本体に放出
され、冷却効果が向上する。しかも、配線部の一部を基
板側に延伸させて外部接続端子としているので、外部接
続端子と器具本体の表面に形成された配線部との電気的
接続を容易に行える。さらに、絶縁部材の基板側に延伸
された部位の先端面に外部接続端子を形成すれば放熱性
を向上させた表面実装型の光源装置を実現できる。According to the invention of claim 22, in claim 20 or 2
In the invention according to the first aspect, a part of the insulating member is extended toward the substrate, and a tip of the extended portion is substantially flush with a surface of the substrate opposite to the insulating member. When the light source device is mounted on the fixture body by placing the light source device on the fixture body at a portion extending toward the substrate side of the substrate, the extended portion of the insulating member is substantially flush with the surface of the substrate opposite to the insulating member. Since the substrate comes into contact with the surface of the appliance body simply by placing the insulating member on the surface of the appliance body, the heat generated by the LED chips is released to the appliance body via the substrate, improving the cooling effect. I do. In addition, since a part of the wiring portion is extended to the substrate side to be an external connection terminal, electrical connection between the external connection terminal and the wiring portion formed on the surface of the appliance body can be easily performed. Furthermore, if an external connection terminal is formed on the distal end surface of a portion of the insulating member that extends toward the substrate, a surface-mounted light source device with improved heat dissipation can be realized.

【００３８】請求項２３の発明では、請求項１の発明に
おいて、絶縁部材とＬＥＤチップと配線部と封止部材と
が基板の両面に設けられたことを特徴とし、基板の両面
からＬＥＤチップの光を放射させることができ、且つ、
基板の両面に同じ部品が配設されているので、基板の反
りを抑制することができる。According to a twenty-third aspect, in the first aspect, the insulating member, the LED chip, the wiring portion, and the sealing member are provided on both sides of the substrate. Can emit light, and
Since the same components are provided on both sides of the board, the warpage of the board can be suppressed.

【００３９】請求項２４の発明では、絶縁部材の一面に
絶縁部材を貫通する孔を形成すると共に、絶縁部材の一
面に配線部を形成した後、絶縁部材の他面に基板を接合
し、孔から露出する基板の部位に対向させ且つ熱結合さ
せてＬＥＤチップを配置し、配線部とＬＥＤチップの電
極とを電気的に接続した後、孔内に透光性を有する封止
材料を充填して、ＬＥＤチップ及びＬＥＤチップと配線
部との電気的接続部の全体を封止することを特徴とし、
絶縁部材と基板とを接合し、絶縁部材に設けた孔から露
出する基板の部位に対向させ且つ熱結合させてＬＥＤチ
ップを配置しているので、従来の光源装置のように絶縁
部材に切削加工を施してＬＥＤチップの実装部位を形成
する場合に比べて、加工費用を低減でき、且つＬＥＤチ
ップの実装部位に切削きずが発生してＬＥＤチップを実
装しにくくなるのを防止でき、さらにＬＥＤチップを基
板に熱結合させているので、ＬＥＤチップの発熱を基板
を介して放出することができ、またＬＥＤチップと基板
の配線部とを金属線により電気的に接続した場合は、封
止材料によってＬＥＤチップ及び金属線の全体を封止し
ているので、樹脂の界面で発生する応力によって金属線
が断線する虞はなく、機械的強度を向上させることがで
きる。According to the twenty-fourth aspect of the present invention, a hole penetrating the insulating member is formed on one surface of the insulating member, and a wiring portion is formed on one surface of the insulating member. The LED chip is arranged by facing and thermally bonding to the portion of the substrate exposed from the substrate, and after electrically connecting the wiring portion and the electrode of the LED chip, the hole is filled with a translucent sealing material. The entirety of the LED chip and the entire electrical connection between the LED chip and the wiring portion is sealed,
The insulating member and the substrate are joined together, and the LED chip is arranged so as to face and thermally bond the portion of the substrate exposed from the hole provided in the insulating member. The processing cost can be reduced as compared with the case where the LED chip mounting portion is formed by applying the LED chip, and it is possible to prevent a cutting flaw from being generated in the LED chip mounting portion and making it difficult to mount the LED chip. Since the LED chip is thermally coupled to the substrate, the heat generated by the LED chip can be released through the substrate, and when the LED chip and the wiring portion of the substrate are electrically connected by a metal wire, the sealing material is used. Since the entire LED chip and the metal wire are sealed, there is no possibility that the metal wire is broken by the stress generated at the interface of the resin, and the mechanical strength can be improved.

【００４０】請求項２５の発明では、基板と、基板に対
向する面に孔が貫通して形成された絶縁部材とをインサ
ート成形し、絶縁部材における基板と反対側の面に配線
部を形成した後、孔から露出する基板の部位に対向させ
且つ熱結合させてＬＥＤチップを配置し、配線部とＬＥ
Ｄチップの電極とを電気的に接続した後、孔内に透光性
を有する封止材料を充填して、ＬＥＤチップ及びＬＥＤ
チップと配線部との電気的接続部の全体を封止すること
を特徴とし、絶縁部材と基板とをインサート成形し、絶
縁部材に設けた孔から露出する基板の部位に対向させ且
つ熱結合させてＬＥＤチップを配置しているので、従来
の光源装置のように絶縁部材に切削加工を施してＬＥＤ
チップの実装部位を形成する場合に比べて、加工費用を
低減でき、且つＬＥＤチップの実装部位に切削きずが発
生してＬＥＤチップを実装しにくくなるのを防止でき、
さらにＬＥＤチップを基板に熱結合しているので、ＬＥ
Ｄチップの発熱を基板を介して放出することができ、ま
たＬＥＤチップと基板の配線部とを金属線により電気的
に接続した場合は、封止材料によってＬＥＤチップ及び
金属線の全体を封止しているので、樹脂の界面で発生す
る応力によって金属線が断線する虞はなく、機械的強度
を向上させることができる。According to the twenty-fifth aspect of the present invention, the substrate and the insulating member having a hole formed in the surface facing the substrate are insert-molded, and the wiring portion is formed on the surface of the insulating member opposite to the substrate. After that, the LED chip is arranged by facing and thermally bonding the portion of the substrate exposed from the hole,
After electrically connecting the electrodes of the D chip, the hole is filled with a light-transmitting sealing material, and the LED chip and the LED
The entirety of the electrical connection between the chip and the wiring portion is sealed, the insulating member and the substrate are insert-molded, and the insulating member and the substrate are opposed to and thermally bonded to a portion of the substrate exposed from a hole provided in the insulating member. Since the LED chip is arranged by cutting, the insulating member is cut like the conventional light source device and
Processing cost can be reduced as compared with the case where a chip mounting portion is formed, and it is possible to prevent a cutting flaw from being generated in the LED chip mounting portion and making it difficult to mount the LED chip,
Furthermore, since the LED chip is thermally bonded to the substrate, LE
The heat of the D chip can be released through the substrate, and when the LED chip and the wiring portion of the substrate are electrically connected by a metal wire, the entire LED chip and the metal wire are sealed with a sealing material. Therefore, there is no possibility that the metal wire is broken by the stress generated at the interface of the resin, and the mechanical strength can be improved.

【００４１】請求項２６の発明では、基板と配線部を構
成する導電板とを所定の間隔をおいてインサート成形す
ることにより絶縁部材を形成し、絶縁部材を貫通して設
けられた孔から露出する基板の部位に対向させ且つ熱結
合させてＬＥＤチップを配置した後、配線部とＬＥＤチ
ップの電極とを電気的に接続し、孔内に透光性を有する
封止材料を充填して、ＬＥＤチップ及びＬＥＤチップと
配線部との電気的接続部の全体を封止することを特徴と
し、絶縁部材と導電板とをインサート成形することによ
り絶縁部材を形成し、絶縁部材に設けた孔から露出する
基板の部位に対向させ且つ熱結合させてＬＥＤチップを
配置しているので、従来の光源装置のように絶縁部材に
切削加工を施してＬＥＤチップの実装部位を形成する場
合に比べて、加工費用を低減でき、且つＬＥＤチップの
実装部位に切削きずが発生してＬＥＤチップを実装しに
くくなるのを防止でき、さらにＬＥＤチップを基板に熱
結合させているので、ＬＥＤチップの発熱を基板を介し
て放出することができ、またＬＥＤチップと配線部とを
金属線により電気的に接続した場合は、封止材料によっ
てＬＥＤチップ及び金属線の全体を封止しているので、
樹脂の界面で発生する応力によって金属線が断線する虞
はなく、機械的強度を向上させることができる。According to the twenty-sixth aspect of the present invention, the insulating member is formed by insert-molding the substrate and the conductive plate constituting the wiring portion at a predetermined interval, and the insulating member is formed through the hole provided through the insulating member. After arranging the LED chip by facing and thermally bonding to the portion of the substrate to be connected, the wiring portion and the electrode of the LED chip are electrically connected, and the hole is filled with a translucent sealing material, The entirety of the LED chip and the electrical connection between the LED chip and the wiring portion is sealed, and the insulating member is formed by insert molding the insulating member and the conductive plate. Since the LED chip is arranged facing and thermally bonded to the exposed portion of the substrate, compared with a case where the insulating member is cut and formed as in the conventional light source device to form the mounting portion of the LED chip, processing The use of LED chips can be reduced, and it is possible to prevent cutting flaws from being generated at the LED chip mounting site and to prevent the LED chips from being difficult to mount. When the LED chip and the wiring portion are electrically connected by a metal wire, the entirety of the LED chip and the metal wire is sealed by a sealing material.
There is no danger that the metal wire will be broken by the stress generated at the resin interface, and the mechanical strength can be improved.

【００４２】請求項２７の発明では、基板と絶縁部材と
を接合し、基板を貫通して設けられ、絶縁部材を貫通す
る孔に連通する連通孔に、ＬＥＤチップが実装された突
起部を挿入して、ＬＥＤチップを絶縁部材の孔内に配置
した後、配線部とＬＥＤチップの電極とを金属線を介し
て電気的に接続し、孔内に透光性を有する封止材料を充
填して、ＬＥＤチップ及び金属線の全体を封止すること
を特徴とし、基板と絶縁部材とを接合し、絶縁部材に設
けた孔から露出する基板の部位にＬＥＤチップを実装し
ているので、従来の光源装置のように絶縁部材に切削加
工を施してＬＥＤチップの実装部位を形成する場合に比
べて、加工費用を低減でき、且つＬＥＤチップの実装部
位に切削きずが発生してＬＥＤチップを実装しにくくな
るのを防止でき、さらにＬＥＤチップを直接基板に実装
しているので、ＬＥＤチップの発熱を基板を介して放出
することができ、また封止材料によってＬＥＤチップ及
び金属線の全体を封止しているので、樹脂の界面で発生
する応力によって金属線が断線する虞はなく、機械的強
度を向上させることができる。しかも、基板に設けた孔
内に突起部を挿入することにより突台部を形成している
ので、基板に切削加工を施して突台部を形成する場合に
比べて、突台部の加工費用を低減できる。According to the twenty-seventh aspect, the substrate and the insulating member are joined to each other, and the protrusion on which the LED chip is mounted is inserted into a communication hole provided through the substrate and communicating with the hole penetrating the insulating member. Then, after disposing the LED chip in the hole of the insulating member, the wiring portion and the electrode of the LED chip are electrically connected via a metal wire, and the hole is filled with a translucent sealing material. Therefore, the entirety of the LED chip and the metal wire is sealed, the substrate and the insulating member are joined, and the LED chip is mounted on a portion of the substrate that is exposed from a hole provided in the insulating member. The processing cost can be reduced compared with the case where the insulating member is cut to form the mounting portion of the LED chip as in the light source device of (1), and the mounting chip of the LED chip is mounted due to generation of cutting flaws. Can be prevented from becoming difficult In addition, since the LED chip is directly mounted on the substrate, the heat generated by the LED chip can be released through the substrate. There is no danger that the metal wire will be broken by the stress generated at the interface, and the mechanical strength can be improved. Moreover, since the projecting portion is formed by inserting the projecting portion into the hole provided in the substrate, the processing cost of the projecting portion is lower than when forming the projecting portion by cutting the substrate. Can be reduced.

【００４３】[0043]

【発明の実施の形態】以下に本発明の実施の形態を図面
を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００４４】（実施形態１）本発明の実施形態１を図１
（ａ）（ｂ）を参照して説明する。この光源装置１は、
例えばアルミニウムのような熱伝導性の高い材料から形
成された厚さが約２ｍｍの基板３と、例えば液晶ポリマ
ーのような絶縁材料からなる厚さが約２ｍｍの絶縁部材
４とを貼り合わせて構成される。(Embodiment 1) FIG. 1 shows Embodiment 1 of the present invention.
Description will be made with reference to (a) and (b). This light source device 1
For example, a substrate 3 having a thickness of about 2 mm formed of a material having high thermal conductivity such as aluminum and an insulating member 4 having a thickness of about 2 mm made of an insulating material such as a liquid crystal polymer are attached to each other. Is done.

【００４５】絶縁部材４における基板３と反対側の面に
は、直径が約３ｍｍで深さが約１．５ｍｍの丸穴５が２
箇所形成され、各丸穴５の略中央には絶縁部材４を貫通
して基板３に達する断面略円形で直径が約１ｍｍの貫通
孔６がそれぞれ穿設されている。ここに、丸穴５と貫通
孔６とで、基板３と対向する絶縁部材４の部位に絶縁部
材４を貫通して設けられた孔が構成され、丸穴５の底部
には内側に突出する張出部４ａが基板３と一体に形成さ
れている。そして、貫通孔６から露出する基板３の部位
にそれぞれＬＥＤチップ２が、銀ペーストのようなダイ
ボンディングペースト７を用いてダイボンドされてい
る。また、絶縁部材４における基板３と反対側の面に
は、２個のＬＥＤチップ２の実装部位を通る同一直線上
に銅などの導電材料からなる配線パターン（配線部）８
が形成されている。配線パターン８は丸穴５の側壁及び
底面（張出部４ａ）まで延設され、ワイヤーボンディン
グ用の接続部を構成しており、ＬＥＤチップ２の電極
（図示せず）と配線パターン８との間は、例えば金のよ
うな金属細線よりなるボンディングワイヤ（金属線）９
を介して電気的に接続されている。ここで、少なくとも
ボンディングワイヤ９の接続される配線パターン８の部
位には金めっきが施されており、ボンディングワイヤ９
をボンディングしやすいようになっている。また、ＬＥ
Ｄチップ２の上面と、丸穴５の底面に形成された配線パ
ターン８の部位とは略同じ高さになっているので、ボン
ディングワイヤ９の長さを短くして、ボンディングワイ
ヤ９の機械的強度を高めることができ、且つ、ボンディ
ング作業を容易に行えるようにしている。A round hole 5 having a diameter of about 3 mm and a depth of about 1.5 mm is formed on a surface of the insulating member 4 opposite to the substrate 3.
At the substantially center of each round hole 5, a through hole 6 having a substantially circular cross section reaching the substrate 3 through the insulating member 4 and having a diameter of about 1 mm is formed. Here, the round hole 5 and the through hole 6 form a hole provided through the insulating member 4 at the portion of the insulating member 4 facing the substrate 3, and project inward at the bottom of the round hole 5. The overhang portion 4a is formed integrally with the substrate 3. Each of the LED chips 2 is die-bonded to a portion of the substrate 3 exposed from the through hole 6 using a die bonding paste 7 such as a silver paste. On the surface of the insulating member 4 opposite to the substrate 3, a wiring pattern (wiring portion) 8 made of a conductive material such as copper is formed on the same straight line passing through the mounting site of the two LED chips 2.
Are formed. The wiring pattern 8 extends to the side wall and the bottom surface (the overhanging portion 4a) of the round hole 5 to form a connection portion for wire bonding, and is formed between the electrode (not shown) of the LED chip 2 and the wiring pattern 8. The gap is a bonding wire (metal wire) 9 made of a thin metal wire such as gold.
Are electrically connected via Here, at least a portion of the wiring pattern 8 to which the bonding wire 9 is connected is plated with gold,
Is easy to bond. Also, LE
Since the upper surface of the D chip 2 and the portion of the wiring pattern 8 formed on the bottom surface of the round hole 5 have substantially the same height, the length of the bonding wire 9 is reduced, The strength can be increased and the bonding operation can be easily performed.

【００４６】その後、丸穴５の内部に透光性を有する２
液硬化型注型用エポキシ樹脂のような封止樹脂（封止材
料）１０を注入することによって、ＬＥＤチップ２とボ
ンディングワイヤ９の全体が樹脂封止され、ボンディン
グワイヤ９の接続部が封止樹脂１０によって保護され
る。ここで、封止樹脂１０を注入する際には、絶縁部材
４の上面まで注入すれば良く、封止樹脂１０の注入量を
容易に制御することができる。また、ボンディングワイ
ヤ９は、張出部４ａ上に延設された配線パターン８の部
位に接続されており、丸穴５内に納められているので、
丸穴５内に充填された封止樹脂１０によってボンディン
グワイヤ９とその接続部位とを樹脂封止することがで
き、ボンディングワイヤ９が封止樹脂１０から外側に露
出することによって機械的強度が低下したり、封止樹脂
１０の表面で発生する応力によってボンディングワイヤ
９が断線する虞はない。Thereafter, the light-transmitting 2 is formed inside the round hole 5.
By injecting a sealing resin (sealing material) 10 such as a liquid curing type epoxy resin for casting, the entire LED chip 2 and the bonding wires 9 are resin-sealed, and the connection portions of the bonding wires 9 are sealed. Protected by resin 10. Here, when the sealing resin 10 is injected, the sealing resin 10 may be injected up to the upper surface of the insulating member 4, and the injection amount of the sealing resin 10 can be easily controlled. Further, since the bonding wire 9 is connected to the portion of the wiring pattern 8 extending on the overhang portion 4 a and is housed in the round hole 5,
The bonding wire 9 and the connection portion thereof can be resin-sealed by the sealing resin 10 filled in the round hole 5, and the bonding wire 9 is exposed to the outside from the sealing resin 10 to lower the mechanical strength. There is no danger that the bonding wire 9 will be broken by the stress generated on the surface of the sealing resin 10.

【００４７】尚、ＬＥＤチップ２としては、チップ上面
に２つの電極が形成されたＧａＮ系ＬＥＤチップを例と
して説明しているが、ＡｌＩｎＧａＰ系ＬＥＤチップの
ようにチップ下面が一方の電極となり、チップ上面にも
う一方の電極が形成されたようなＬＥＤチップを用いて
も良く、この場合は基板３を配線として用いるか、又
は、基板３に電極を設け、ＬＥＤチップと基板３の電極
及び配線パターン８との間をそれぞれボンディングワイ
ヤで接続すれば良い。Although the GaN-based LED chip having two electrodes formed on the upper surface of the chip is described as an example of the LED chip 2, the lower surface of the chip becomes one electrode like an AlInGaP-based LED chip. An LED chip in which the other electrode is formed on the upper surface may be used. In this case, the substrate 3 is used as wiring, or an electrode is provided on the substrate 3, and the LED chip and the electrode and wiring pattern of the substrate 3 are used. 8 may be connected by bonding wires.

【００４８】上述のように、本実施形態の光源装置１で
は、ＬＥＤチップ２が熱伝導性の良好な基板３上に直接
ダイボンドされているから、ＬＥＤチップ２の発熱はダ
イボンディングペースト７を介して基板３へ伝わり、基
板３に到達したＬＥＤチップ２の発熱は速やかに基板３
全体に広がる。ここで、ＬＥＤチップ２の発熱の放熱経
路には、熱伝導係数の低いダイボンディングペースト７
が存在するが、ダイボンディングペースト７の厚さは数
μｍ程度と薄いため、放熱性に与える影響は小さく、十
分な放熱性能が得られる。例えば熱抵抗で比較すると、
従来例で説明した砲弾型ＬＥＤの場合は、ＬＥＤチップ
からリードフレームの先端までの熱抵抗が約３５０℃／
Ｗであったのに対して、本実施形態の光源装置１では、
ＬＥＤチップ２から基板３の裏面までの熱抵抗が約９０
℃／Ｗであり、熱抵抗を約４分の１に低減することがで
きる。As described above, in the light source device 1 of the present embodiment, the LED chip 2 is directly die-bonded on the substrate 3 having good heat conductivity. Of the LED chip 2 that reaches the substrate 3 and quickly reaches the substrate 3
Spread throughout. Here, a die bonding paste 7 having a low heat conduction coefficient is provided on a heat radiation path of heat generation of the LED chip 2.
However, since the thickness of the die bonding paste 7 is as thin as about several μm, the influence on the heat radiation is small, and sufficient heat radiation performance can be obtained. For example, comparing with thermal resistance,
In the case of the shell type LED described in the conventional example, the thermal resistance from the LED chip to the tip of the lead frame is about 350 ° C. /
In contrast to W, in the light source device 1 of the present embodiment,
The thermal resistance from the LED chip 2 to the back surface of the substrate 3 is about 90
° C / W, and the thermal resistance can be reduced to about a quarter.

【００４９】したがって、従来の光源装置に比べて、Ｌ
ＥＤチップ２から外部への放熱特性が高くなり、ＬＥＤ
チップ２の温度上昇が抑制されるから、ＬＥＤチップ２
の発光効率が向上すると共に、光出力が増加し、且つ、
長寿命化を図ることができる。Therefore, as compared with the conventional light source device, L
The heat radiation characteristics from the ED chip 2 to the outside are improved,
Since the temperature rise of the chip 2 is suppressed, the LED chip 2
And the light output is increased, and
The service life can be extended.

【００５０】また、ＬＥＤチップ２およびボンディング
ワイヤ９は封止樹脂１０によって封止されており、ボン
ディングワイヤ９の接続部位も封止樹脂１０によって保
護されているから、ボンディングワイヤ９に応力が加わ
ることはなく、ボンディングワイヤ９の断線を防止する
ことができ、機械的な強度を向上させることができる。Further, since the LED chip 2 and the bonding wires 9 are sealed by the sealing resin 10 and the connection portions of the bonding wires 9 are also protected by the sealing resin 10, stress is applied to the bonding wires 9. However, the breaking of the bonding wire 9 can be prevented, and the mechanical strength can be improved.

【００５１】尚、本実施形態では基板３としてアルミ板
を用いているが、基板３の材料をアルミニウムに限定す
る趣旨のものではなく、銅などの金属や、窒化アルミニ
ウムなどの熱伝導性の高いセラミックスから形成しても
良く、上述と同様の効果が得られる。また、本実施形態
では絶縁部材４上にプリント配線技術を用いて配線パタ
ーン８を形成しているが、配線パターン８の代わりに、
絶縁部材４内を通り、ボンディングワイヤ９の接続部位
のみをＬＥＤチップ２の近傍に露出させたリードフレー
ム（図示せず）を用いて、ＬＥＤチップ２の配線を行っ
ても良い。Although an aluminum plate is used as the substrate 3 in the present embodiment, the material of the substrate 3 is not limited to aluminum, but a metal such as copper or a material having high heat conductivity such as aluminum nitride is used. It may be formed from ceramics, and the same effects as described above can be obtained. Further, in the present embodiment, the wiring pattern 8 is formed on the insulating member 4 by using the printed wiring technology, but instead of the wiring pattern 8,
The wiring of the LED chip 2 may be performed using a lead frame (not shown) in which only the connection portion of the bonding wire 9 is exposed near the LED chip 2 through the inside of the insulating member 4.

【００５２】（実施形態２）本発明の実施形態２を図２
を参照して説明する。この光源装置１は、例えばアルミ
ニウムのような熱伝導性の高い材料から形成された基板
３と、例えば液晶ポリマーのような絶縁材料からなる厚
みが約２ｍｍの絶縁部材４とを貼り合わせて形成され
る。(Embodiment 2) Embodiment 2 of the present invention is shown in FIG.
This will be described with reference to FIG. The light source device 1 is formed by bonding a substrate 3 formed of a material having high thermal conductivity such as aluminum and an insulating member 4 having a thickness of about 2 mm made of an insulating material such as a liquid crystal polymer. You.

【００５３】基板３は厚みが約３ｍｍのアルミ板に切削
加工を施すことによって形成され、基板３における絶縁
部材４側の面には、直径が約１ｍｍで高さが約０．９ｍ
ｍの略円柱状の突台部１１が突設されている。The substrate 3 is formed by cutting an aluminum plate having a thickness of about 3 mm, and the surface of the substrate 3 on the insulating member 4 side has a diameter of about 1 mm and a height of about 0.9 m.
A substantially cylindrical protruding base 11 of m is protruded.

【００５４】絶縁部材４における基板３と反対側の面に
は、基板３の突台部１１に対応する部位に凹所５’が形
成されており、凹所５’の底には絶縁部材４を貫通する
貫通孔６が形成されている。ここで、貫通孔６の孔径は
約１ｍｍであり、突台部１１の外径と略同じになってい
る。また、凹所５’の底面の内径は約２ｍｍであり、凹
所５’の側壁は基板３側から遠ざかるにしたがって内径
が大きくなり、約４５度の角度で傾斜するような断面形
状に形成されている。ここに、凹所５’と貫通孔６と
で、基板３と対向する絶縁部材４の部位に絶縁部材４を
貫通して設けられた孔が構成され、凹所５’の底部には
内側に突出する張出部４ａが基板３と一体に形成されて
いる。On the surface of the insulating member 4 opposite to the substrate 3, a recess 5 ′ is formed at a position corresponding to the protruding portion 11 of the substrate 3, and the insulating member 4 is formed at the bottom of the recess 5 ′. Is formed. Here, the hole diameter of the through hole 6 is about 1 mm, which is substantially the same as the outer diameter of the protruding base 11. The inner diameter of the bottom surface of the concave portion 5 'is about 2 mm, and the side wall of the concave portion 5' is formed to have a cross-sectional shape such that the inner diameter increases as the distance from the substrate 3 increases and is inclined at an angle of approximately 45 degrees. ing. Here, the recess 5 ′ and the through hole 6 constitute a hole provided through the insulating member 4 at the portion of the insulating member 4 facing the substrate 3, and the bottom of the recess 5 ′ is formed inside. A protruding portion 4 a is formed integrally with the substrate 3.

【００５５】ここで、基板３及び絶縁部材４は貫通孔６
と突台部１１とを嵌合させた状態で接合されており、貫
通孔６から露出する突台部１１の部位には厚さが約０．
２ｍｍのＬＥＤチップ２が、銀ペーストのようなダイボ
ンディングペースト７を用いてダイボンドされている。
また絶縁部材４における基板３と反対側の面には、銅な
どの導電材料からなる配線パターン８が形成され、その
表面には金めっきを施してある。配線パターン８は凹所
５’の側壁及び底面まで延設されており、凹所５’の底
面（張出部４ａ）に延設された配線パターン８の部位と
ＬＥＤチップ２の上面に形成された電極との間は、例え
ば金のような金属細線からなるボンディングワイヤ９を
介して電気的に接続されている。Here, the substrate 3 and the insulating member 4 are
And the abutment 11 are fitted together, and the thickness of the part of the abutment 11 exposed from the through-hole 6 is approximately 0.1 mm.
A 2 mm LED chip 2 is die-bonded using a die bonding paste 7 such as a silver paste.
A wiring pattern 8 made of a conductive material such as copper is formed on a surface of the insulating member 4 opposite to the substrate 3, and the surface thereof is plated with gold. The wiring pattern 8 extends to the side wall and the bottom surface of the recess 5 ′, and is formed on the portion of the wiring pattern 8 extending on the bottom surface (overhang portion 4 a) of the recess 5 ′ and the upper surface of the LED chip 2. The electrodes are electrically connected via bonding wires 9 made of, for example, a thin metal wire such as gold.

【００５６】その後、凹所５’の内部に透光性を有する
２液硬化型注型用エポキシ樹脂のような封止樹脂１０を
注入することによって、ＬＥＤチップ２とボンディング
ワイヤ９とが樹脂封止され、ボンディングワイヤ９の接
続部が封止樹脂１０によって保護される。ここで、封止
樹脂１０を注入する際には、絶縁部材４の上面まで注入
すれば良く、封止樹脂１０の注入量を容易に制御するこ
とができる。しかも、ボンディングワイヤ９は、張出部
４ａ上に延設された配線パターン８の部位に接続されて
おり、凹所５’内に納められているので、凹所５’内に
充填された封止樹脂１０によってボンディングワイヤ９
とその接続部位とを樹脂封止することができ、ボンディ
ングワイヤ９が封止樹脂１０から外側に露出することに
よって機械的強度が低下したり、封止樹脂１０の表面で
発生する応力によってボンディングワイヤ９が断線する
虞はない。Thereafter, the LED chip 2 and the bonding wires 9 are sealed by injecting a sealing resin 10 such as a two-liquid curing type epoxy resin having a light transmitting property into the recess 5 ′. The connection portion of the bonding wire 9 is protected by the sealing resin 10. Here, when the sealing resin 10 is injected, the sealing resin 10 may be injected up to the upper surface of the insulating member 4, and the injection amount of the sealing resin 10 can be easily controlled. Moreover, since the bonding wire 9 is connected to the portion of the wiring pattern 8 extending on the overhang portion 4a and is housed in the recess 5 ', the sealing wire filled in the recess 5' is provided. Bonding wire 9 by resin 10
And the connection portion thereof can be resin-sealed, and the bonding wire 9 is exposed to the outside from the sealing resin 10 so that the mechanical strength is reduced. There is no risk that the wire 9 will break.

【００５７】また本実施形態の光源装置１では、ＬＥＤ
チップ２が熱伝導性の良好な基板３上に直接ダイボンド
されているから、実施形態１の光源装置１と同様、十分
な放熱性能を得ることができ、ＬＥＤチップ２の温度上
昇が抑制されるから、ＬＥＤチップ２の発光効率が向上
すると共に、光出力が増加し、且つ、長寿命化を図るこ
とができる。In the light source device 1 of this embodiment, the LED
Since the chip 2 is directly die-bonded on the substrate 3 having good thermal conductivity, sufficient heat radiation performance can be obtained similarly to the light source device 1 of the first embodiment, and the temperature rise of the LED chip 2 is suppressed. Therefore, the luminous efficiency of the LED chip 2 is improved, the light output is increased, and the life is prolonged.

【００５８】さらに本実施形態の光源装置１では基板３
に突台部１１を形成しているので、基板３及び絶縁部材
４の接合方向において、ＬＥＤチップ２の上面と張出部
４ａに形成された配線パターン８の高さとを略同じ高さ
にしたとしても、突台部１１の高さ分だけ張出部４ａの
厚みを厚くすることができる。ここで、絶縁部材４を樹
脂から形成する場合、張出部４ａの厚みを薄くすると歩
留まりが増加するなどして、張出部４ａの加工が難しく
なる。また、基板３と絶縁部材４とを貼り合わせて形成
する場合、張出部４ａの厚みが薄いと、基板３との間に
隙間が生じる虞がある。それに対して、本実施形態の光
源装置１では張出部４ａの幅寸法が約０．５ｍｍである
のに対して、厚みが約１ｍｍとなっているので、張出部
４ａを容易に加工することができ、また基板３との間に
隙間を生じることなく、基板３及び絶縁部材４を貼り合
わせることができる。Further, in the light source device 1 of this embodiment, the substrate 3
Since the protrusion 11 is formed on the upper surface, the upper surface of the LED chip 2 and the wiring pattern 8 formed on the overhang portion 4a are made substantially the same height in the joining direction of the substrate 3 and the insulating member 4. However, the thickness of the overhang portion 4a can be increased by the height of the protruding portion 11. Here, in the case where the insulating member 4 is formed of resin, if the thickness of the overhang portion 4a is reduced, the yield is increased, and processing of the overhang portion 4a becomes difficult. Also, when the substrate 3 and the insulating member 4 are formed by bonding, if the thickness of the overhang portion 4a is small, a gap may be formed between the substrate 3 and the insulating member 4. On the other hand, in the light source device 1 of the present embodiment, since the width of the overhang 4a is about 0.5 mm and the thickness is about 1 mm, the overhang 4a is easily processed. The substrate 3 and the insulating member 4 can be bonded together without forming a gap between the substrate 3 and the insulating member 4.

【００５９】また、実施形態１の光源装置１と同様、Ｌ
ＥＤチップ２の上面と、凹所５’の底面（張出部４ａ）
に形成された配線パターン８の部位とは略同じ高さにな
っているので、ボンディングワイヤ９の長さを短くし
て、ボンディングワイヤ９の機械的強度を高めることが
でき、且つ、ボンディング作業を容易に行えるという利
点もある。また、凹所５’の側壁をテーパ面としている
ので、ＬＥＤチップ２から放射された光が凹所５’の側
壁によって吸収されたり、乱反射されることはなく、効
率良く前方へ反射させることができる。Further, similarly to the light source device 1 of the first embodiment, L
The top surface of the ED chip 2 and the bottom surface of the recess 5 '(overhang 4a)
Since the height of the bonding wire 9 is substantially the same as that of the wiring pattern 8 formed on the bonding wire 9, the length of the bonding wire 9 can be shortened, the mechanical strength of the bonding wire 9 can be increased, and the bonding operation can be performed. There is also an advantage that it can be easily performed. Further, since the side wall of the recess 5 'is tapered, the light emitted from the LED chip 2 is not absorbed or irregularly reflected by the side wall of the recess 5', and can be efficiently reflected forward. it can.

【００６０】（実施形態３）本発明の実施形態３を図３
（ａ）を参照して説明する。本実施形態の光源装置１で
は、実施形態２の光源装置１において、基板３に設けた
突台部１１の高さ寸法を約１．１ｍｍとしており、突台
部１１の上面と張出部４ａに形成された配線パターン８
の上面との高さを略同じにしている。尚、突台部１１以
外の構成は実施形態２と同様であるので、同一の構成要
素には同一の符号を付して、その説明を省略する。(Embodiment 3) FIG. 3 shows Embodiment 3 of the present invention.
This will be described with reference to FIG. In the light source device 1 of the present embodiment, in the light source device 1 of the second embodiment, the height of the protruding portion 11 provided on the substrate 3 is set to about 1.1 mm, and the upper surface of the protruding portion 11 and the overhang portion 4 a Wiring pattern 8 formed on
Is approximately the same height as the upper surface. The configuration other than the protruding portion 11 is the same as that of the second embodiment.

【００６１】実施形態２の光源装置１では、ＬＥＤチッ
プ２から放射された光の内、ＬＥＤチップ２の上面と略
平行な方向（水平方向）に放射された光の一部は、張出
部４ａの端面によって吸収されたり、乱反射されるなど
して、前方へ放射されなくなり発光効率が低下する虞が
ある。それに対して、本実施形態の光源装置１では、突
台部１１の上面と、張出部４ａに形成された配線パター
ン８の上面との高さを略同じ高さにしており、ＬＥＤチ
ップ２は略平坦な面にダイボンディングされているの
で、ＬＥＤチップ２から放射された光が張出部４ａの端
面に吸収されたり、乱反射される虞はなく、発光効率を
向上させることができる。In the light source device 1 of the second embodiment, of the light emitted from the LED chip 2, a part of the light emitted in a direction substantially parallel to the upper surface of the LED chip 2 (horizontal direction) is There is a possibility that the light is not emitted forward due to absorption or irregular reflection by the end face of 4a, and the luminous efficiency is reduced. On the other hand, in the light source device 1 of the present embodiment, the height of the upper surface of the protrusion 11 and the upper surface of the wiring pattern 8 formed on the overhang portion 4a are substantially the same, and the LED chip 2 Since the LED is die-bonded to a substantially flat surface, there is no possibility that the light emitted from the LED chip 2 is absorbed by the end surface of the overhang portion 4a or irregularly reflected, and the luminous efficiency can be improved.

【００６２】尚、図３（ｂ）に示すように、突台部１１
の上面を、張出部４ａに形成された配線パターン８より
も上方へ突出させても良く、上述と同様に、ＬＥＤチッ
プ２の光が張出部４ａの端面に吸収されたり、乱反射さ
れる虞はなく、発光効率を向上させることができる。
尚、突台部１１の突出量が大きくなりすぎると、ボンデ
ィングワイヤ９のワイヤ長が長くなって、ボンディング
ワイヤ９が突台部１１の角に接触する虞があるため、突
台部１１の高さは、突台部１１の上面と張出部４ａに形
成された配線パターン８の上面とが略面一になるような
高さか、又は、突台部１１の上面が張出部４ａに形成さ
れた配線パターン８の上面よりも若干高くなるような高
さに形成するのが望ましい。Incidentally, as shown in FIG.
May be made to protrude above the wiring pattern 8 formed on the overhang portion 4a, and the light of the LED chip 2 is absorbed by the end surface of the overhang portion 4a or irregularly reflected, as described above. There is no fear that the luminous efficiency can be improved.
If the projecting amount of the projecting portion 11 becomes too large, the wire length of the bonding wire 9 becomes long, and the bonding wire 9 may come into contact with a corner of the projecting portion 11. The height is such that the upper surface of the protrusion 11 is substantially flush with the upper surface of the wiring pattern 8 formed on the protrusion 4a, or the upper surface of the protrusion 11 is formed on the protrusion 4a. It is desirable to form the wiring pattern 8 at a height slightly higher than the upper surface of the wiring pattern 8.

【００６３】（実施形態４）本発明の実施形態４を図４
（ａ）を参照して説明する。本実施形態では、実施形態
３の光源装置１において、基板３に設けた突台部１１の
直径を約０．５ｍｍ、高さ寸法を約１．１ｍｍとしてお
り、突台部１１の上面と張出部４ａに形成された配線パ
ターン８の上面との高さを略同じにしている。尚、基板
３及びＬＥＤチップ２の配置以外は実施形態３と同様で
あるので、同一の構成要素には同一の符号を付して、そ
の説明を省略する。(Embodiment 4) FIG. 4 shows Embodiment 4 of the present invention.
This will be described with reference to FIG. In the present embodiment, in the light source device 1 of the third embodiment, the diameter of the protrusion 11 provided on the substrate 3 is about 0.5 mm and the height is about 1.1 mm, and the upper surface of the protrusion 11 is stretched. The height with respect to the upper surface of the wiring pattern 8 formed on the protrusion 4a is substantially the same. Since the arrangement is the same as that of the third embodiment except for the arrangement of the substrate 3 and the LED chips 2, the same components are denoted by the same reference numerals and description thereof will be omitted.

【００６４】ＬＥＤチップ２は透明なサファイア基板か
らなり、電極間距離が約１ｍｍのものを用いており、Ｌ
ＥＤチップ２を突台部１１と対向させ、突台部１１が電
極間に位置するようにして、ＬＥＤチップ２の電極面を
配線パターン８にフェースダウン実装した。ここで、Ｌ
ＥＤチップ２と配線パターン８とは以下のような方法で
接合した。すなわち、ＬＥＤチップ２の電極上に半田バ
ンプ２１を形成し、リフロー炉で加熱して半田バンプ２
１を溶融させることにより接合した。なお半田バンプ２
１の高さは２〜３μｍであり、基板３とＬＥＤチップ２
の電極面もこの間隔で離れているため電気的絶縁は保た
れる。また封止樹脂１０が基板３とＬＥＤチップ２との
隙間に充填されるが、基板３とＬＥＤチップ２との間の
距離は十分短いため、ＬＥＤチップ２は基板３に熱結合
されており、ＬＥＤチップ２から基板３への熱伝導に対
しては大きな障害とはならない。The LED chip 2 is made of a transparent sapphire substrate and has a distance between electrodes of about 1 mm.
The electrode surface of the LED chip 2 was face-down mounted on the wiring pattern 8 so that the ED chip 2 was opposed to the projecting portion 11 so that the projecting portion 11 was located between the electrodes. Where L
The ED chip 2 and the wiring pattern 8 were joined by the following method. That is, the solder bumps 21 are formed on the electrodes of the LED chip 2 and heated in a reflow furnace to form the solder bumps 2.
1 by melting. Note that solder bump 2
1 has a height of 2 to 3 μm, and the substrate 3 and the LED chip 2
Since the electrode surfaces are also separated at this interval, electrical insulation is maintained. Further, the sealing resin 10 is filled in the gap between the substrate 3 and the LED chip 2, but since the distance between the substrate 3 and the LED chip 2 is sufficiently short, the LED chip 2 is thermally coupled to the substrate 3, The heat conduction from the LED chip 2 to the substrate 3 does not become a major obstacle.

【００６５】また実施形態３で説明した光源装置１で
は、ＬＥＤチップ２の電極が凹所５’の開口部側を向い
ているので、ＬＥＤチップ２から外部へと向かう光の一
部はＬＥＤチップ２の電極によって遮られる。遮られた
光の一部は反射を繰り返して外部へと取り出されるが、
残りは内部で吸収されてロスとなる。それに対して、本
実施形態では、ＬＥＤチップ２の電極が基板３側に配置
されており、ＬＥＤチップ２の発光部からの発光は透明
なサファイア基板を通じて取り出されるため、ＬＥＤチ
ップ２の電極やボンディングワイヤ９によって発光の一
部が遮蔽されることがなく、全体として光量が低下する
のを防止できる。また、実施形態３の光源装置１にレン
ズなどの光学部品を組み合わせて使用する場合、焦点距
離によってはＬＥＤチップ２の電極の形状が影として照
射面に投影される問題があるが、本実施形態では電極が
基板３側に配置されているので、前面が均一な照射面と
することができる。さらに、実施形態３で説明したよう
に、ＬＥＤチップ２から放射された光が張出部４ａの端
面に吸収されたり、乱反射される虞はなく、発光効率を
向上させることができる。In the light source device 1 described in the third embodiment, since the electrodes of the LED chip 2 face the opening side of the recess 5 ′, a part of the light traveling from the LED chip 2 to the outside is 2 electrodes. Some of the blocked light is repeatedly reflected and extracted to the outside,
The rest is absorbed internally and becomes a loss. On the other hand, in the present embodiment, the electrodes of the LED chip 2 are arranged on the substrate 3 side, and the light emitted from the light emitting portion of the LED chip 2 is extracted through the transparent sapphire substrate. Part of the light emission is not shielded by the wire 9, so that it is possible to prevent the amount of light from decreasing as a whole. When the light source device 1 of the third embodiment is used in combination with an optical component such as a lens, there is a problem that the shape of the electrode of the LED chip 2 is projected as a shadow on the irradiation surface depending on the focal length. Since the electrodes are arranged on the substrate 3 side, the front surface can be a uniform irradiation surface. Further, as described in the third embodiment, there is no possibility that the light emitted from the LED chip 2 is absorbed by the end face of the overhang portion 4a or irregularly reflected, and the luminous efficiency can be improved.

【００６６】なお、図４（ｂ）に示すように、突台部１
１の上面を、張出部４ａに形成された配線パターン８よ
りも約３μｍ上方へ突出させ、ＬＥＤチップ２を突台部
１１上面に接触させた状態でフェースダウン実装しても
良く、ＬＥＤチップ２を突台部１１と直接接触させるこ
とによって放熱性を向上させることができる。但し、こ
の場合には突台部１１の上面、又は、突台部１１の上面
と接触するＬＥＤチップ２の部位を酸化珪素などの絶縁
性材料でコーティングするなどしてＬＥＤチップ２と基
板３とを絶縁するか、或いは、基板３の材料として電気
導電性の無い材料を用いる必要がある。また、突台部１
１と配線パターン８との段差を吸収するために、半田バ
ンプ２１の高さを高くするのが望ましく、ＬＥＤチップ
２の電極と配線パターン８との電気的接続を確実にでき
る。Note that, as shown in FIG.
The upper surface of the LED chip 2 may be protruded upward by about 3 μm from the wiring pattern 8 formed on the overhang portion 4a, and the LED chip 2 may be mounted face down with the LED chip 2 in contact with the upper surface of the protruding portion 11. The heat radiation can be improved by bringing the 2 into direct contact with the protruding portion 11. However, in this case, the upper surface of the protrusion 11 or the portion of the LED chip 2 that is in contact with the upper surface of the protrusion 11 is coated with an insulating material such as silicon oxide to form the LED chip 2 and the substrate 3. Must be insulated, or a material having no electrical conductivity needs to be used as the material of the substrate 3. In addition, the platform 1
It is desirable to increase the height of the solder bumps 21 in order to absorb a step between the wiring pattern 8 and the wiring pattern 8, so that electrical connection between the electrode of the LED chip 2 and the wiring pattern 8 can be ensured.

【００６７】ここで、光源装置１の構造を図４（ｂ）に
示す構造とした場合にも、上述と同様、ＬＥＤチップ２
から放射された光が張出部４ａの端面に吸収されたり、
乱反射される虞はなく、発光効率を向上させることがで
きる。Here, also in the case where the structure of the light source device 1 is the structure shown in FIG.
Is absorbed by the end face of the overhang portion 4a,
There is no possibility of irregular reflection, and the luminous efficiency can be improved.

【００６８】（実施形態５）本発明の実施形態５を図５
を参照して説明する。本実施形態の光源装置１では、実
施形態３の光源装置１において、基板３の下面における
突台部１１に対応する部位に凹所１２を設けている。
尚、凹所１２以外の構成は実施形態３の光源装置１と同
様であるので、実施形態３と同一の構成要素には同一の
符号を付して、その説明を省略する。(Embodiment 5) Embodiment 5 of the present invention is shown in FIG.
This will be described with reference to FIG. In the light source device 1 according to the present embodiment, in the light source device 1 according to the third embodiment, a recess 12 is provided at a position corresponding to the protruding portion 11 on the lower surface of the substrate 3.
Since the configuration other than the recess 12 is the same as that of the light source device 1 of the third embodiment, the same components as those of the third embodiment are denoted by the same reference numerals, and description thereof will be omitted.

【００６９】実施形態３の光源装置１では、基板３に切
削加工を施すことによって突台部１１を形成している
が、本実施形態の光源装置１では、基板３を一面から打
ち出してプレス加工を施し、凹所１２を形成することに
よって、基板３の反対側の面に突台部１１を形成してお
り、切削加工を施す場合に比べて加工費用を低減でき
る。In the light source device 1 according to the third embodiment, the projecting portion 11 is formed by cutting the substrate 3, but in the light source device 1 according to the present embodiment, the substrate 3 is stamped out from one surface and pressed. And the recess 12 is formed, so that the protruding portion 11 is formed on the surface on the opposite side of the substrate 3, so that the processing cost can be reduced as compared with the case of performing the cutting process.

【００７０】また、基板３と絶縁部材４とを接着剤を用
いて貼り合わせる場合、接着剤の硬化収縮によって基板
３及び絶縁部材４全体が反ってしまう虞がある。一方、
プレス加工により突台部１１を形成すると、接着剤の硬
化収縮によって反る方向とは逆方向の反りが基板３に発
生するので、両者の反りを相殺することによって基板３
及び絶縁部材４全体の反りを抑えることができる。When the substrate 3 and the insulating member 4 are bonded to each other using an adhesive, there is a possibility that the substrate 3 and the insulating member 4 as a whole are warped due to the curing shrinkage of the adhesive. on the other hand,
When the protrusion 11 is formed by pressing, the substrate 3 is warped in a direction opposite to the warping direction due to the curing shrinkage of the adhesive.
In addition, warpage of the entire insulating member 4 can be suppressed.

【００７１】この光源装置１では、ＬＥＤチップ２の発
熱はダイボンディングペースト７を介して基板３の突台
部１１に伝わる。突台部１１の裏面には凹所１２が形成
されているが、基板３は一体に形成されているので、突
台部１１に伝わったＬＥＤチップ２の発熱は、速やかに
基板３全体に伝わり、外部へ放熱される。また、基板３
は、光源装置１が取り付けられる筐体や放熱フィンなど
の放熱部品に接触させた状態で使用されるため、ＬＥＤ
チップ２の発熱は基板３を介して速やかに放熱部品へ放
出されることになり、その放熱性能は凹所１２が形成さ
れていない場合と略同様である。In the light source device 1, heat generated by the LED chip 2 is transmitted to the protruding portion 11 of the substrate 3 via the die bonding paste 7. Although the recess 12 is formed on the back surface of the abutment 11, the substrate 3 is formed integrally, so that the heat of the LED chip 2 transmitted to the abutment 11 is quickly transmitted to the entire substrate 3. Heat is radiated to the outside. Also, the substrate 3
Is used in a state where it is in contact with a heat radiating component such as a housing to which the light source device 1 is attached or a heat radiating fin.
The heat generated by the chip 2 is quickly released to the heat radiating component via the substrate 3, and the heat radiating performance is almost the same as when the recess 12 is not formed.

【００７２】（実施形態６）本発明の実施形態６を図６
を参照して説明する。実施形態３の光源装置１では、基
板３に切削加工を施すことにより突台部１１を形成して
いるが、本実施形態の光源装置１では、突台部１１を形
成する代わりに、熱伝導性を有する材料から形成された
ベース板３’における絶縁部材４の貫通孔６に対応する
部位に、貫通孔６に連通する断面略円形の連通孔１３を
形成し、この連通孔１３内に例えばアルミニウムのよう
な熱伝導性を有する材料から形成された円柱状の熱伝導
体（突起部）１４を圧入している。ここに、ベース板
３’と熱伝導体１４とで基板が構成され、ベース板３’
の表面から絶縁部材４側に突出する熱伝導体１４の先端
部から突台部が構成され、熱伝導体１４の先端部は貫通
孔６内に挿入され、熱伝導体１４の先端部にＬＥＤチッ
プ２がダイボンディングペースト７を用いてダイボンド
される。尚、ベース板３’及び熱伝導体１４以外の構成
は実施形態３と同様であるので、同一の構成要素には同
一の符号を付して、その説明を省略する。(Embodiment 6) FIG.
This will be described with reference to FIG. In the light source device 1 of the third embodiment, the protruding portion 11 is formed by performing a cutting process on the substrate 3. However, in the light source device 1 of the present embodiment, instead of forming the protruding portion 11, heat conduction is performed. A communication hole 13 having a substantially circular cross section communicating with the through hole 6 is formed at a portion corresponding to the through hole 6 of the insulating member 4 in the base plate 3 ′ formed of a material having a property. A columnar heat conductor (projection) 14 made of a material having heat conductivity such as aluminum is press-fitted. Here, a substrate is constituted by the base plate 3 'and the heat conductor 14, and the base plate 3'
A protruding portion is formed from the tip of the heat conductor 14 protruding from the surface of the heat conductor 14 toward the insulating member 4. The tip of the heat conductor 14 is inserted into the through hole 6, and the tip of the heat conductor 14 is The chip 2 is die-bonded using the die bonding paste 7. The configuration other than the base plate 3 'and the heat conductor 14 is the same as that of the third embodiment.

【００７３】実施形態３の光源装置では、金属板に切削
加工を施すことによって基板３に突台部１１を形成して
いるので、加工費用が高くなるが本実施形態では、ベー
ス板３’に孔開け加工を施し、孔内に熱伝導体１４を圧
入することによって、突台部を形成しているので、切削
加工によって突台部１１を形成する場合に比べて、加工
費用を低減することができる。In the light source device according to the third embodiment, since the protruding portion 11 is formed on the substrate 3 by cutting the metal plate, the processing cost is increased. Since the abutment portion is formed by performing a drilling process and press-fitting the heat conductor 14 into the hole, the processing cost is reduced as compared with the case where the abutment portion 11 is formed by cutting. Can be.

【００７４】またベース板３’の裏面に、光源装置が取
り付けられる筐体や放熱フィンなどの放熱部品を接触さ
せて使用する場合を考えると、ＬＥＤチップ２の発熱は
ダイボンディングペースト７を介して熱伝導体１４に伝
わる。ここで、熱伝導体１４は、ベース板３’を貫通す
る連通孔１３内に圧入され、ベース板３’の裏面まで達
しているので、ＬＥＤチップ２の発熱は熱伝導体１４を
通じて速やかに裏面側に伝わり、放熱部品へと放出され
る。また、熱伝導体１４はベース板３’の連通孔１３内
に圧入されており、熱伝導体１４とベース板３’とは密
着しているので、両者の間では十分な熱伝導が行われ、
熱伝導体１４に伝わった熱はベース板３’全体に速やか
に放出されるから、基板３に突台部１１を一体に形成し
た実施形態３の光源装置と同様の放熱特性を得ることが
できる。Considering a case in which a heat radiating component such as a housing or a heat radiating fin to which the light source device is attached is brought into contact with the back surface of the base plate 3 ′, the LED chip 2 generates heat through the die bonding paste 7. It is transmitted to the heat conductor 14. Here, the heat conductor 14 is press-fitted into the communication hole 13 penetrating the base plate 3 ′ and reaches the back surface of the base plate 3 ′. Side, and is released to the heat dissipating component. The heat conductor 14 is press-fitted into the communication hole 13 of the base plate 3 ', and the heat conductor 14 and the base plate 3' are in close contact with each other, so that sufficient heat conduction is performed between the two. ,
Since the heat transmitted to the heat conductor 14 is quickly released to the entire base plate 3 ′, it is possible to obtain the same heat radiation characteristics as the light source device of the third embodiment in which the base 11 is formed integrally with the substrate 3. .

【００７５】（実施形態７）本発明の実施形態７を図７
を参照して説明する。本実施形態の光源装置１では、実
施形態３の光源装置１において、基板３に設けた突台部
１１の周面と、絶縁部材４に設けた貫通孔６の端面との
間に隙間１５を設けている。また、絶縁部材４における
基板３側の面（接合面）に位置決め用の凹所１６を形成
するとともに、凹所１６と凹凸係止する凸部１７を基板
３の上面（接合面）に設けている。尚、隙間１５、凹所
１６、凸部１７以外は実施形態３の光源装置１と同様で
あるので、同一の構成要素には同一の符号を付して、そ
の説明を省略する。(Embodiment 7) FIG. 7 shows Embodiment 7 of the present invention.
This will be described with reference to FIG. In the light source device 1 according to the present embodiment, in the light source device 1 according to the third embodiment, a gap 15 is formed between the peripheral surface of the protrusion 11 provided in the substrate 3 and the end surface of the through hole 6 provided in the insulating member 4. Provided. In addition, a positioning recess 16 is formed on the surface (joining surface) of the insulating member 4 on the substrate 3 side, and a convex portion 17 that engages with the recess 16 is provided on the upper surface (joining surface) of the substrate 3. I have. The components other than the gap 15, the concave portion 16, and the convex portion 17 are the same as those of the light source device 1 of the third embodiment, and therefore, the same components are denoted by the same reference numerals, and description thereof will be omitted.

【００７６】ここで、基板３及び絶縁部材４を接着剤で
貼り合わせて形成する場合、余分な接着剤が接着面から
はみ出す虞があり、実施形態３の光源装置ではＬＥＤチ
ップ２がダイボンドされる部位のすぐ近傍に接着剤がは
み出すため、ＬＥＤチップ２から放射される光の一部が
接着剤によって遮光される虞がある。また、はみ出した
接着剤が突台部１１の先端面に付着して、ＬＥＤチップ
２をダイボンドできなくなる虞もあるが、本実施形態の
光源装置では、突台部１１と張出部４ａとの間に隙間１
５を設けており、接着面からはみ出した接着剤は隙間１
５に溜まるため、ＬＥＤチップ２がダイボンドされる部
位の近傍に余分な接着剤がはみ出して、ＬＥＤチップ２
から放射される光が遮光されたり、ＬＥＤチップ２をダ
イボンドできなくなるのを防止できる。Here, when the substrate 3 and the insulating member 4 are formed by bonding with an adhesive, there is a possibility that the excess adhesive may protrude from the bonding surface. In the light source device of the third embodiment, the LED chip 2 is die-bonded. Since the adhesive protrudes in the vicinity of the part, a part of the light emitted from the LED chip 2 may be blocked by the adhesive. Further, there is a possibility that the protruding adhesive adheres to the tip end surface of the protruding portion 11 and the LED chip 2 cannot be die-bonded. Gap 1 between
5 is provided, and the adhesive protruding from the bonding surface is a gap 1
5, the excess adhesive protrudes near the portion where the LED chip 2 is die-bonded, and the LED chip 2
Can be prevented from being blocked from being emitted from the LED chip 2, and the LED chip 2 cannot be die-bonded.

【００７７】また、基板３に設けた凸部１７と、絶縁部
材４に設けた凹所１６とを凹凸係止することによって、
基板３と絶縁部材４との位置合わせを行うことができ、
基板３及び絶縁部材４を貼り合わせる際の位置決めが容
易に行える。尚、本実施形態では基板３に設けた凸部１
７と、絶縁部材４に設けた凹所１６とで、基板３と絶縁
部材４との位置決めを行うための位置決め手段を構成し
ているが、位置決め手段を凸部１７と凹所１６とに限定
する趣旨のものではなく、適宜の手段を用いて基板３と
絶縁部材４との位置決めを行うようにすれば良い。Also, the projections 17 provided on the substrate 3 and the recesses 16 provided on the insulating member 4 are engaged with the projections and depressions, whereby
The alignment between the substrate 3 and the insulating member 4 can be performed,
Positioning when bonding the substrate 3 and the insulating member 4 can be easily performed. In this embodiment, the protrusions 1 provided on the substrate 3 are provided.
7 and the recess 16 provided in the insulating member 4 constitute positioning means for positioning the substrate 3 and the insulating member 4, but the positioning means is limited to the convex portion 17 and the recess 16. Instead, the substrate 3 and the insulating member 4 may be positioned using appropriate means.

【００７８】（実施形態８）本発明の実施形態８を図８
を参照して説明する。本実施形態では、実施形態３の光
源装置１において、絶縁部材４の基板３側の面に貫通孔
６を中心として半径約１ｍｍの位置に幅約０．５ｍｍ、
深さ約０．３ｍｍのリング状の溝４ｄを設けている。
尚、溝４ｄ以外の構成は実施形態３と同様であるので、
同一の構成要素には同一の符号を付して、その説明は省
略する。(Eighth Embodiment) FIG.
This will be described with reference to FIG. In the present embodiment, in the light source device 1 according to the third embodiment, a width of about 0.5 mm is provided on the surface of the insulating member 4 on the substrate 3 side at a radius of about 1 mm with the through hole 6 as a center.
A ring-shaped groove 4d having a depth of about 0.3 mm is provided.
Since the configuration other than the groove 4d is the same as that of the third embodiment,
The same components are denoted by the same reference numerals, and description thereof will be omitted.

【００７９】ここで、基板３と絶縁部材４とを接着剤で
貼り合わせて接合する場合、余分な接着剤が接着面から
はみ出す虞があり、実施形態３の光源装置１ではＬＥＤ
チップ２がダイボンドされる部位のすぐ近傍に接着剤が
はみ出すため、ＬＥＤチップ２から放射される光の一部
が接着剤によって遮光される虞がある。また、はみ出し
た接着剤が突台部１１の先端面に付着して、ＬＥＤチッ
プ２をダイボンドできなくなる虞もある。それに対し
て、本実施形態の光源装置１では、突台部１１が嵌合さ
れる貫通孔６の周囲に溝４ｄが形成されているため、余
分な接着剤２２はこの溝４ｄ内に溜まり、貫通孔６を通
って突台部１１近傍にはみ出すのを防止できる。Here, when the substrate 3 and the insulating member 4 are bonded by bonding with an adhesive, there is a possibility that excess adhesive may protrude from the bonding surface.
Since the adhesive protrudes in the vicinity of the portion where the chip 2 is die-bonded, a part of the light emitted from the LED chip 2 may be blocked by the adhesive. In addition, the protruding adhesive may adhere to the tip end surface of the protruding base portion 11, and the LED chip 2 may not be die-bonded. On the other hand, in the light source device 1 of the present embodiment, since the groove 4d is formed around the through hole 6 into which the protrusion 11 is fitted, excess adhesive 22 accumulates in the groove 4d, It can be prevented from protruding to the vicinity of the protruding part 11 through the through hole 6.

【００８０】また、接着剤２２の塗布にムラがある場
合、基板３と絶縁部材４との接合面に接着剤２２が不足
する部位が発生して隙間ができ、封止樹脂１０を充填す
る際にこの隙間を通って封止樹脂１０が漏れ出す虞があ
るが、本実施形態では、貫通孔６の周りに溝４ｄを形成
しており、溝４ｄ内に溜まった接着剤２２が封止樹脂１
０の流出を防止する堰の役割を果たすため、封止樹脂１
０の流出を防止できる。If there is unevenness in the application of the adhesive 22, a portion where the adhesive 22 is insufficient occurs on the joint surface between the substrate 3 and the insulating member 4, and a gap is formed. Although there is a possibility that the sealing resin 10 leaks through this gap, in the present embodiment, the groove 4 d is formed around the through hole 6, and the adhesive 22 accumulated in the groove 4 d 1
Sealing resin 1
0 can be prevented from flowing out.

【００８１】（実施形態９）本発明の実施形態９を図９
を参照して説明する。本実施形態では、実施形態３の光
源装置１において、基板３の材料として例えば銅のよう
な導電性材料を用い、突台部１１の上面に金のめっき層
を形成している。また、配線パターン８は凹所５’内に
１電極分のみを形成しており、ＬＥＤチップ２を、突台
部１１と張出部４ａに形成された配線パターン８とに跨
る位置に、一方の電極を突台部１１の上面と接触させる
とともに、他方の電極を張出部４ａに形成された配線パ
ターン８と接触させるようにしてフェースダウン実装し
ている。尚、ＬＥＤチップ２の実装方法以外は実施形態
３と同様であるので、同一の構成要素には同一の符号を
付して、その説明は省略する。(Embodiment 9) Embodiment 9 of the present invention will be described with reference to FIG.
This will be described with reference to FIG. In the present embodiment, in the light source device 1 of the third embodiment, a conductive material such as copper is used as a material of the substrate 3, and a gold plating layer is formed on the upper surface of the protruding portion 11. Also, the wiring pattern 8 has only one electrode formed in the recess 5 ′, and the LED chip 2 is placed on one side at a position straddling the protruding portion 11 and the wiring pattern 8 formed on the overhanging portion 4 a. This electrode is brought into contact with the upper surface of the protruding portion 11, and the other electrode is brought into contact with the wiring pattern 8 formed on the overhanging portion 4a, so as to be mounted face-down. Note that, except for the method of mounting the LED chip 2, the third embodiment is the same as the third embodiment.

【００８２】本実施形態の光源装置１では、実施形態４
と同様、ＬＥＤチップ２の電極が基板３側に配置されて
おり、ＬＥＤチップ２の発光部からの発光は透明なサフ
ァイア基板を通じて取り出されるため、ＬＥＤチップ２
の電極によって発光の一部が遮蔽されることがなく、全
体として光量が低下するのを防止できる。また、実施形
態３で説明したように、ＬＥＤチップ２から放射された
光が張出部４ａの端面に吸収されたり、乱反射される虞
はなく、発光効率を向上させることができる。さらに、
本実施形態では配線パターン８と基板３との間に電源Ｅ
と電流制限用の抵抗Ｒとを接続することによって、ＬＥ
Ｄチップ２に給電することができ、基板３を給電部の一
部として利用しているため、凹所５’内へ延伸する配線
パターン８を簡略化することができる。また、基板３を
通じて裏面側に配線が引き出されるのと同じ効果がある
ため、光源装置１の電力を基板３の裏面側から供給する
ことができる。In the light source device 1 of the present embodiment, the fourth embodiment
Similarly to the above, the electrodes of the LED chip 2 are arranged on the substrate 3 side, and the light emitted from the light emitting portion of the LED chip 2 is extracted through the transparent sapphire substrate.
A part of the light emission is not blocked by the electrodes, and it is possible to prevent the light quantity from decreasing as a whole. In addition, as described in the third embodiment, there is no possibility that the light emitted from the LED chip 2 is absorbed by the end face of the overhang portion 4a or irregularly reflected, and the luminous efficiency can be improved. further,
In this embodiment, the power supply E is provided between the wiring pattern 8 and the substrate 3.
By connecting the current limiting resistor R to the
Since the power can be supplied to the D chip 2 and the substrate 3 is used as a part of the power supply unit, the wiring pattern 8 extending into the recess 5 ′ can be simplified. In addition, since the same effect is obtained as the wiring is drawn to the back side through the substrate 3, the power of the light source device 1 can be supplied from the back side of the substrate 3.

【００８３】なお、本実施形態の光源装置１では、ＬＥ
Ｄチップ２をフェースダウン実装しているが、ＬＥＤチ
ップ２をフェースアップでダイボンディング実装し、ボ
ンディングワイヤを介してＬＥＤチップ２の電極と配線
パターン８及び基板３とを電気的に接続するようにして
も良い。In the light source device 1 of this embodiment, the LE
Although the D chip 2 is mounted face-down, the LED chip 2 is die-bonded face-up, and the electrodes of the LED chip 2 are electrically connected to the wiring patterns 8 and the substrate 3 via bonding wires. May be.

【００８４】（実施形態１０）本発明の実施形態１０を
図１０を参照して説明する。実施形態９の光源装置１で
は基板３にＬＥＤチップ２を１個実装しているが、本実
施形態では複数（例えば２個）のＬＥＤチップ２を基板
３に実装している。また、基板３に互いに電気的に絶縁
された複数の基板部（領域）３ａ，３ｂを設けており、
各基板部３ａ，３ｂにそれぞれＬＥＤチップ２を１個づ
つ実装している。尚、基本的な構造は実施形態９と同様
であるので、同一の構成要素には同一の符号を付して、
その説明は省略する。(Embodiment 10) Embodiment 10 of the present invention will be described with reference to FIG. In the light source device 1 of the ninth embodiment, one LED chip 2 is mounted on the substrate 3, but in the present embodiment, a plurality of (for example, two) LED chips 2 are mounted on the substrate 3. Further, a plurality of substrate portions (regions) 3a and 3b which are electrically insulated from each other are provided on the substrate 3,
One LED chip 2 is mounted on each of the substrates 3a and 3b. Since the basic structure is the same as that of the ninth embodiment, the same components are denoted by the same reference numerals, and
The description is omitted.

【００８５】ところで、実施形態９の光源装置１では、
基板３の材料として導電性材料を用いており、基板３は
全体が同電位となっているので、基板３に複数のＬＥＤ
チップ２を実装した場合、これらのＬＥＤチップ２は全
て並列に接続されることになる。ＬＥＤチップ２は個体
ごとに若干駆動電圧が異なるため、複数のＬＥＤチップ
２を並列接続した場合は、駆動電圧が最も低いＬＥＤチ
ップ２に多大な電流が流れて、このＬＥＤチップ２が破
損する虞がある。複数のＬＥＤチップ２に流れる電流を
均一にするためには、個々のＬＥＤチップ２毎に電流制
限用の抵抗を直列接続すれば良いが、ＬＥＤチップ２の
数だけ電流制限用の抵抗が必要になり、電流制限用の抵
抗で消費される電力損失が増大するという問題がある。By the way, in the light source device 1 of the ninth embodiment,
Since a conductive material is used as the material of the substrate 3 and the entire substrate 3 has the same potential, a plurality of LEDs are provided on the substrate 3.
When the chip 2 is mounted, these LED chips 2 are all connected in parallel. Since the drive voltage of each LED chip 2 is slightly different for each individual, when a plurality of LED chips 2 are connected in parallel, a large amount of current flows to the LED chip 2 having the lowest drive voltage, and this LED chip 2 may be damaged. There is. In order to make the current flowing through the plurality of LED chips 2 uniform, a current limiting resistor may be connected in series for each LED chip 2, but a current limiting resistor is required for each LED chip 2. Therefore, there is a problem that the power loss consumed by the current limiting resistor increases.

【００８６】それに対して、本実施形態では基板３を互
いに電気的に絶縁された複数の基板部３ａ，３ｂに分割
し、各基板部３ａ，３ｂにＬＥＤチップ２，２を１個づ
つ実装しているので、各基板部３ａ，３ｂに実装された
ＬＥＤチップ２，２を直列接続し、ＬＥＤチップ２，２
の直列回路と並列に電流制限用の抵抗Ｒを介して直流電
源Ｅを接続することにより、個々のＬＥＤチップ２に流
れる電流を均一にできる。したがって、特定のＬＥＤチ
ップ２に集中して電流が流れることがないから、電流集
中によるＬＥＤチップ２の破損を防止でき、また電流制
限用抵抗Ｒが複数のＬＥＤチップ２に対して１個で済む
から、電流制限用の抵抗Ｒによって発生する電力損失を
低減できる。On the other hand, in this embodiment, the substrate 3 is divided into a plurality of substrate portions 3a and 3b which are electrically insulated from each other, and the LED chips 2 and 2 are mounted on each of the substrate portions 3a and 3b. Therefore, the LED chips 2, 2 mounted on each of the board portions 3a, 3b are connected in series, and the LED chips 2, 2,
By connecting a DC power supply E via a current limiting resistor R in parallel with the series circuit of the above, the current flowing through each LED chip 2 can be made uniform. Therefore, current does not flow to a specific LED chip 2 in a concentrated manner, so that damage to the LED chip 2 due to current concentration can be prevented, and only one current limiting resistor R is required for a plurality of LED chips 2. Therefore, the power loss generated by the current limiting resistor R can be reduced.

【００８７】また本実施形態の光源装置１では、実施形
態４と同様、ＬＥＤチップ２の電極が基板３側に配置さ
れており、ＬＥＤチップ２の発光部からの発光は透明な
サファイア基板を通じて取り出されるため、ＬＥＤチッ
プ２の電極によって発光の一部が遮蔽されることがな
く、全体として光量が低下するのを防止できる。また、
実施形態３で説明したように、ＬＥＤチップ２から放射
された光が張出部４ａの端面に吸収されたり、乱反射さ
れる虞はなく、発光効率を向上させることができる。さ
らに、本実施形態では配線パターン８と基板３との間に
電源Ｅと電流制限用の抵抗Ｒとを接続することによっ
て、ＬＥＤチップ２に給電することができ、基板３を給
電部の一部として利用しているため、凹所５’内へ延伸
する配線パターンを簡略化することができる。また、基
板３を通じて裏面側に配線が引き出されるのと同じ効果
があるため、光源装置１の電力を基板３の裏面側から供
給することができる。In the light source device 1 of the present embodiment, similarly to the fourth embodiment, the electrodes of the LED chip 2 are arranged on the substrate 3 side, and the light emitted from the light emitting portion of the LED chip 2 is extracted through a transparent sapphire substrate. Therefore, a part of the light emission is not blocked by the electrodes of the LED chip 2, and it is possible to prevent the light quantity from decreasing as a whole. Also,
As described in the third embodiment, there is no possibility that the light emitted from the LED chip 2 is absorbed by the end face of the overhang portion 4a or is irregularly reflected, and the luminous efficiency can be improved. Further, in the present embodiment, the power can be supplied to the LED chip 2 by connecting the power supply E and the current limiting resistor R between the wiring pattern 8 and the substrate 3, and the substrate 3 is partially connected to the power supply unit. Therefore, the wiring pattern extending into the recess 5 ′ can be simplified. In addition, since the same effect is obtained as the wiring is drawn to the back side through the substrate 3, the power of the light source device 1 can be supplied from the back side of the substrate 3.

【００８８】（実施形態１１）本発明の実施形態１１を
図１１を参照して説明する。実施形態３の光源装置１で
は、絶縁部材４に設けた凹所５’内に封止樹脂１０を注
入し（注型）、ＬＥＤチップ２やボンディングワイヤ９
を封止しているが、本実施形態の光源装置１では、実施
形態３の光源装置において、金型を用いたトランスファ
ー成形によって樹脂封止を行っており、封止樹脂１０の
表面に凸レンズ１０ａを形成している。尚、封止樹脂１
０以外の構成は実施形態３と同様であるので、同一の構
成要素には同一の符号を付して、その説明を省略する。Embodiment 11 Embodiment 11 of the present invention will be described with reference to FIG. In the light source device 1 of the third embodiment, the sealing resin 10 is injected (cast) into the recess 5 ′ provided in the insulating member 4, and the LED chip 2 and the bonding wire 9 are formed.
However, in the light source device 1 of the present embodiment, in the light source device of the third embodiment, resin molding is performed by transfer molding using a mold, and a convex lens 10 a is formed on the surface of the sealing resin 10. Is formed. In addition, sealing resin 1
Since the configuration other than 0 is the same as that of the third embodiment, the same components are denoted by the same reference numerals and description thereof will be omitted.

【００８９】実施形態３の光源装置１のように注型によ
り樹脂封止を行う場合は、封止樹脂１０の表面を所望の
形状に形成することはできないが、本実施形態の光源装
置１では、基板３及び絶縁部材４ごと金型（図示せず）
内に組み込み、圧入によって封止樹脂１０を押し込むト
ランスファー成形により樹脂封止を行っているので、封
止樹脂１０の表面を凸レンズの形状に容易に形成するこ
とができ、封止樹脂１０から構成される凸レンズによっ
てＬＥＤチップ２から放射された光を、ＬＥＤチップ２
の前方の所望の方向に配光することができる。When resin sealing is performed by casting as in the light source device 1 of the third embodiment, the surface of the sealing resin 10 cannot be formed into a desired shape. Mold (not shown) together with the substrate 3 and the insulating member 4
Since the resin is sealed by transfer molding in which the sealing resin 10 is pressed into the sealing resin 10 by press-fitting, the surface of the sealing resin 10 can be easily formed in the shape of a convex lens. Light emitted from the LED chip 2 by the convex lens
Can be distributed in a desired direction in front of the camera.

【００９０】尚、本実施形態では封止樹脂１０の表面を
凸レンズの形状に形成しているが、封止樹脂１０の表面
を凹レンズの形状に形成しても良く、凹レンズにより拡
散光放射を行うようにしても良い。また、注型により樹
脂封止を行う場合でも、凹所５’の内側面の面粗さや、
形状や、表面処理などの条件を用いて、凹所５’の内側
面と封止樹脂１０との濡れ性を制御することによって、
封止樹脂１０の表面形状を制御することも可能であり、
一般に濡れ性が良い場合は封止樹脂１０の表面形状は凹
面となり、濡れ性が悪い場合は封止樹脂１０の表面形状
は凸面となる。In the present embodiment, the surface of the sealing resin 10 is formed in the shape of a convex lens. However, the surface of the sealing resin 10 may be formed in the shape of a concave lens, and diffused light is emitted by the concave lens. You may do it. Further, even when resin sealing is performed by casting, the surface roughness of the inner surface of the recess 5 ′,
By controlling the wettability between the inner surface of the recess 5 ′ and the sealing resin 10 by using conditions such as shape and surface treatment,
It is also possible to control the surface shape of the sealing resin 10,
In general, when the wettability is good, the surface shape of the sealing resin 10 is concave, and when the wettability is bad, the surface shape of the sealing resin 10 is convex.

【００９１】（実施形態１２）本発明の実施形態１２を
図１２（ａ）（ｂ）を参照して説明する。図１２（ａ）
は光源装置１の断面図、図１２（ｂ）は光源装置１の平
面図をそれぞれ示す。本実施形態では、実施形態３の光
源装置１において、絶縁部材４に形成した凹所５’の内
面全体に、例えば銀のような導電性の高い材料により形
成された高反射率の反射膜（反射部）１８を形成してい
る。反射膜１８は配線パターン８，８に連続して形成さ
れており、配線パターン８の延びる方向と直交する方向
に延びる幅狭（例えば幅約０．２ｍｍ）のスリット２４
によって２つの部位に分割され、それぞれの部位は電気
的に絶縁されている。そして、突台部１１の上面に実装
されたＬＥＤチップ２の電極と各反射膜１８，１８とを
ボンディングワイヤ９によって電気的に接続している。
尚、反射膜１８以外の構成は実施形態３と同様であるの
で、同一の構成要素には同一の符号を付して、その説明
は省略する。(Embodiment 12) Embodiment 12 of the present invention will be described with reference to FIGS. FIG. 12 (a)
FIG. 12B is a cross-sectional view of the light source device 1, and FIG. In the present embodiment, in the light source device 1 of the third embodiment, a high-reflectivity reflective film (for example, formed of a highly conductive material such as silver) is formed on the entire inner surface of the recess 5 ′ formed in the insulating member 4. (Reflection portion) 18. The reflective film 18 is formed continuously with the wiring patterns 8, 8, and has a narrow (for example, about 0.2 mm wide) slit 24 extending in a direction orthogonal to the direction in which the wiring pattern 8 extends.
Into two parts, and each part is electrically insulated. The electrodes of the LED chip 2 mounted on the upper surface of the protrusion 11 are electrically connected to the respective reflective films 18 by bonding wires 9.
Since the configuration other than the reflective film 18 is the same as that of the third embodiment, the same components are denoted by the same reference numerals and description thereof will be omitted.

【００９２】本実施形態の光源装置１では、ＬＥＤチッ
プ２から放射された光は、一部が封止樹脂１０を透過し
て直接外部へ放射されると共に、一部が反射膜１８によ
って反射され外部へ放射される。絶縁部材４の表面より
も、反射膜１８の方が反射率が高いため、実施形態３の
光源装置１に比べて外部へと取り出される発光の割合が
高くなる。さらに、本実施形態の光源装置１では、配線
パターン８の一部で反射膜１８を兼用しているため、凹
所５’内に配線パターン８と反射膜１８とを別々に形成
する場合に比べて、配線パターン又は反射膜の形状を簡
略化できる。尚、ボンディングワイヤ９をワイヤボンデ
ィングするためには、反射膜１８を材料を金とするのが
望ましいが、反射膜１８を金により形成した場合は、青
色発光のＬＥＤチップ２から放射される青色光を吸収し
てしまうため、本実施形態では反射膜１８の材料として
銀を用いている。In the light source device 1 of this embodiment, part of the light emitted from the LED chip 2 is transmitted through the sealing resin 10 and directly emitted to the outside, and part of the light is reflected by the reflective film 18. Radiated to the outside. Since the reflectance of the reflective film 18 is higher than that of the surface of the insulating member 4, the ratio of light emitted to the outside is higher than that of the light source device 1 of the third embodiment. Further, in the light source device 1 of the present embodiment, since the reflection film 18 is also used as a part of the wiring pattern 8, compared with the case where the wiring pattern 8 and the reflection film 18 are separately formed in the recess 5 '. Thus, the shape of the wiring pattern or the reflection film can be simplified. In order to wire-bond the bonding wire 9, it is desirable that the material of the reflection film 18 is gold. In this embodiment, silver is used as the material of the reflective film 18 because the light is absorbed.

【００９３】（実施形態１３）本発明の実施形態１３を
図１３（ａ）（ｂ）を参照して説明する。実施形態３の
光源装置１では、絶縁部材４における基板３と反対側の
面に、突台部１１の直径と略同じ幅の配線パターン８，
８を、突台部１１を通る同一直線上に形成しており、Ｌ
ＥＤチップ２の上面に設けた電極と各配線パターン８と
の間をボンディングワイヤ９を介して電気的に接続して
いる。それに対して、本実施形態の光源装置１では、実
施形態３の光源装置において、各配線パターン８の幅寸
法を突台部１１の直径に比べて十分小さい幅寸法（例え
ば約０．５ｍｍ）とし、ＬＥＤチップ２の電極と各配線
パターン８との間を接続するボンディングワイヤ９の延
びる方向に、各配線パターン８を延長して形成してい
る。そして、凹所５’の内側面および底面における配線
パターン８以外の部位に、例えば銀から形成された高反
射率の反射膜（反射部）１８を形成している。尚、配線
パターン８及び反射膜１８以外の構成は実施形態３と同
様であるので、同一の構成要素には同一の符号を付し
て、その説明を省略する。(Thirteenth Embodiment) A thirteenth embodiment of the present invention will be described with reference to FIGS. In the light source device 1 according to the third embodiment, the wiring pattern 8 having a width substantially equal to the diameter of the projection 11 is provided on the surface of the insulating member 4 opposite to the substrate 3.
8 are formed on the same straight line passing through the abutment 11, and L
An electrode provided on the upper surface of the ED chip 2 and each wiring pattern 8 are electrically connected via a bonding wire 9. On the other hand, in the light source device 1 of the present embodiment, in the light source device of the third embodiment, the width dimension of each wiring pattern 8 is set to a width dimension (for example, about 0.5 mm) that is sufficiently smaller than the diameter of the protrusion 11. Each wiring pattern 8 is formed to extend in the direction in which the bonding wire 9 connecting the electrode of the LED chip 2 and each wiring pattern 8 extends. Then, a reflection film (reflection portion) 18 made of, for example, silver and having a high reflectance is formed on the inner side surface and the bottom surface of the recess 5 ′ except for the wiring pattern 8. Since the configuration other than the wiring pattern 8 and the reflection film 18 is the same as that of the third embodiment, the same components are denoted by the same reference numerals and description thereof will be omitted.

【００９４】この光源装置１では、ＬＥＤチップ２から
放射された光は、一部が封止樹脂１０を透過して直接外
部へ放射されると共に、一部が反射膜１８によって反射
され外部へ放射される。In the light source device 1, a part of the light emitted from the LED chip 2 passes through the sealing resin 10 and is emitted directly to the outside, and a part is reflected by the reflection film 18 and emitted to the outside. Is done.

【００９５】ところで、実施形態３の光源装置１では、
ＬＥＤチップ２から放射された光の一部はボンディング
ワイヤ９によって遮光される。また凹所５’の内側面お
よび底面に形成された配線パターン８には、ワイヤーボ
ンディングを容易に行えるようにするため、表面に金め
っきを施しているが、青色発光や緑色発光のＬＥＤチッ
プ２を用いる場合、金のめっき層はこれらの光に対して
反射率が低いため、光源装置１の光出力が低下するとい
う問題があった。By the way, in the light source device 1 of the third embodiment,
Part of the light emitted from the LED chip 2 is shielded by the bonding wire 9. The wiring pattern 8 formed on the inner side surface and the bottom surface of the recess 5 ′ is gold-plated on the surface in order to facilitate wire bonding. In the case where is used, there is a problem that the light output of the light source device 1 is reduced because the gold plating layer has a low reflectance for these lights.

【００９６】それに対して、本実施形態では、反射率の
低い配線パターン８の幅寸法を狭くすると共に、ボンデ
ィングワイヤ９の延びる方向に配線パターン８を形成し
ているので、ボンディングワイヤ９の影となる部分と配
線パターン８とを一致させることによって、ＬＥＤチッ
プ２からの光が遮光される部位の面積を小さくできる。
また、凹所５’の内側面および底面における配線パター
ン８以外の部位に反射膜１８を形成しているので、ＬＥ
Ｄチップ２からの光を効率良く反射させることができ、
光取り出し効率を向上させることができる。On the other hand, in the present embodiment, the width of the wiring pattern 8 having a low reflectance is reduced, and the wiring pattern 8 is formed in the direction in which the bonding wire 9 extends. By matching the portion to be formed with the wiring pattern 8, the area of the portion where light from the LED chip 2 is blocked can be reduced.
Further, since the reflection film 18 is formed on the inner side surface and the bottom surface of the recess 5 ′ at a portion other than the wiring pattern 8, LE
The light from the D chip 2 can be reflected efficiently,
Light extraction efficiency can be improved.

【００９７】（実施形態１４）本発明の実施形態１４を
図１４を参照して説明する。本実施形態の光源装置１で
は、実施形態３の光源装置において、ＬＥＤチップ２と
して青色発光のＬＥＤチップを用いると共に、封止樹脂
１０’の中にＬＥＤチップ２の青色発光により励起され
補色である黄色発光を行う蛍光体粒子を分散させてお
り、封止樹脂１０’に光色変換機能を持たせている。
尚、封止樹脂１０’以外の構成は実施形態３と同様であ
るので、同一の構成要素には同一の符号を付して、その
説明は省略する。(Embodiment 14) Embodiment 14 of the present invention will be described with reference to FIG. In the light source device 1 according to the present embodiment, in the light source device according to the third embodiment, an LED chip that emits blue light is used as the LED chip 2, and the LED is excited by the blue light emission of the LED chip 2 in the sealing resin 10 ′ and has a complementary color. Phosphor particles that emit yellow light are dispersed, and the sealing resin 10 ′ has a light color conversion function.
The configuration other than the sealing resin 10 'is the same as that of the third embodiment.

【００９８】この光源装置１では、ＬＥＤチップ２から
の青色発光と、蛍光体粒子によって一部変換された黄色
光との混色によって、白色光を得ることができる。砲弾
型発光ダイオードの場合は、初期光束の７０％にまで低
下する寿命が約６０００時間程度と短いが、本実施形態
の光源装置１では、ＬＥＤチップ２の放熱性を高めるこ
とにより、砲弾型発光ダイオードに比べて著しく寿命を
延ばすことができ、長寿命の白色発光ダイオードを実現
することができる。In the light source device 1, white light can be obtained by mixing the blue light emitted from the LED chip 2 and the yellow light partially converted by the phosphor particles. In the case of the shell-type light emitting diode, the life of reducing to 70% of the initial luminous flux is as short as about 6000 hours. However, in the light source device 1 of the present embodiment, by increasing the heat dissipation of the LED chip 2, the shell-type light emitting diode is improved. The life can be significantly extended as compared with the diode, and a long-life white light emitting diode can be realized.

【００９９】（実施形態１５）本発明の実施形態１５を
図１５を参照して説明する。本実施形態では、実施形態
５の光源装置１において、張出部４ａの突出量を大きく
し、張出部４ａの内周面に上側ほど開口が広がるように
傾斜するテーパ面２５を形成している。尚、テーパ面２
５以外は実施形態５の光源装置１と略同様であるので、
同一の構成要素には同一の符号を付して、その説明を省
略する。(Embodiment 15) Embodiment 15 of the present invention will be described with reference to FIG. In the present embodiment, in the light source device 1 of the fifth embodiment, the projecting amount of the overhang portion 4a is increased, and a tapered surface 25 is formed on the inner peripheral surface of the overhang portion 4a so as to be inclined such that the opening increases toward the upper side. I have. In addition, the tapered surface 2
Since other than 5 is substantially the same as the light source device 1 of the fifth embodiment,
The same components are denoted by the same reference numerals, and description thereof will be omitted.

【０１００】基板３は厚さが約１ｍｍのアルミ板からな
り、このアルミ板を一面から打ち出してプレス加工を施
し、凹所１２を形成することによって、反対側の面に突
台部１１を形成している。The substrate 3 is made of an aluminum plate having a thickness of about 1 mm. The aluminum plate is stamped out from one side and subjected to press working to form a recess 12 to form a projection 11 on the opposite side. are doing.

【０１０１】一方、絶縁部材４における基板３と反対側
の面には、基板３の突台部１１に対応する部位に凹所
５’が形成されている。凹所５’の底面は基板３に対し
て略平行であり、底面の形状は直径が約２．７ｍｍの円
形となっており、凹所５’の底面略中央には絶縁部材４
を貫通する貫通孔６が形成されている。ここで、貫通孔
６における基板３側の部位の孔径は突台部１１の外径と
略同じ径に形成されているが、上下方向における途中の
部位から凹所５’の底面にかけて、上側にいくほど開口
が広がるように傾斜するテーパ面２５が形成されてい
る。また、凹所５’の側周面にも、上側ほど開口が広が
るように傾斜するテーパ面２６を形成してあり、テーパ
面２６は凹所５’の底面から絶縁部材４の上面にかけて
形成されている。On the other hand, on the surface of the insulating member 4 opposite to the substrate 3, a recess 5 ′ is formed at a position corresponding to the protruding portion 11 of the substrate 3. The bottom surface of the recess 5 ′ is substantially parallel to the substrate 3, the shape of the bottom surface is a circle having a diameter of about 2.7 mm, and the insulating member 4 is provided substantially at the center of the bottom surface of the recess 5 ′.
Is formed. Here, the hole diameter of the portion of the through hole 6 on the substrate 3 side is formed to be substantially the same as the outer diameter of the protruding portion 11, but from the middle portion in the vertical direction to the bottom surface of the recess 5 ′, A tapered surface 25 is formed so that the opening becomes wider as it goes. A tapered surface 26 is also formed on the side peripheral surface of the recess 5 ′ so that the opening is widened toward the upper side. The tapered surface 26 is formed from the bottom surface of the recess 5 ′ to the upper surface of the insulating member 4. ing.

【０１０２】ここで、配線パターン８は絶縁部材４にお
ける基板３と反対側の面に形成されており、テーパ面２
６を通って凹所５’の底面まで延設されている。そし
て、突台部１１の上面には青色発光のＬＥＤチップ２が
ダイボンディングされており、ＬＥＤチップ２の電極と
配線パターン８とをボンディングワイヤ９によって電気
的に接続している。なお、ＬＥＤチップ２の上面はテー
パ面２５の上端よりも基板３側に位置するように各部の
寸法が設定されている。Here, the wiring pattern 8 is formed on the surface of the insulating member 4 on the side opposite to the substrate 3, and the tapered surface 2
6 to the bottom of the recess 5 '. A blue light emitting LED chip 2 is die-bonded to the upper surface of the protruding portion 11, and the electrodes of the LED chip 2 and the wiring patterns 8 are electrically connected by bonding wires 9. The dimensions of each part are set such that the upper surface of the LED chip 2 is located closer to the substrate 3 than the upper end of the tapered surface 25.

【０１０３】絶縁部材４の凹所５’内にはテーパ面２６
の略上端まで封止樹脂１０’を充填しており、封止樹脂
１０’によりＬＥＤチップ２及びボンディングワイヤ９
を保護している。この封止樹脂１０’の中には、ＬＥＤ
チップ２の青色発光により励起され補色である黄色発光
を行う蛍光体粒子を分散させており、封止樹脂１０’に
光色変換機能を持たせている。而して、この光源装置１
では、実施形態１４と同様に、ＬＥＤチップ２からの青
色発光と、封止樹脂１０’中の蛍光体粒子によって一部
変換された黄色光とを混色することによって、白色光を
得ることができる。The tapered surface 26 is formed in the recess 5 ′ of the insulating member 4.
Of the LED chip 2 and the bonding wires 9 are filled with the sealing resin 10 ′.
Is protected. The sealing resin 10 ′ includes an LED
Phosphor particles that are excited by blue light emission of the chip 2 and emit complementary yellow light are dispersed therein, and the sealing resin 10 ′ has a light color conversion function. Thus, this light source device 1
Then, similarly to Embodiment 14, white light can be obtained by mixing the blue light emission from the LED chip 2 and the yellow light partially converted by the phosphor particles in the sealing resin 10 ′. .

【０１０４】ところで、ＬＥＤチップ２から放射された
光は、封止樹脂１０’中の蛍光体粒子によって一部が黄
色に変換されると同時に散乱されながら封止樹脂１０’
内を進行する。上述した実施形態１４の光源装置１の場
合、ＬＥＤチップ２から放出された青色発光の内、基板
３に対して垂直方向に進む光が封止樹脂１０’内を通過
する距離と、基板３に対して斜め方向に進む光が封止樹
脂１０’内を通過する距離とでは、斜め方向に進む光が
封止樹脂１０’内を通過する距離の方が長いため、斜め
方向では青色発光の大部分が黄色光に変換されてしま
う。このため基板３に対して垂直方向では白色光が得ら
れても、斜め方向では黄色みをおびた光が得られるとい
う発光色の角度依存性が生じる問題点がある。By the way, the light emitted from the LED chip 2 is partially converted into yellow by the phosphor particles in the sealing resin 10 ′ and is scattered at the same time as being scattered.
Proceed inside. In the case of the light source device 1 of Embodiment 14 described above, of the blue light emitted from the LED chip 2, the distance that light traveling in the direction perpendicular to the substrate 3 passes through the sealing resin 10 ′ On the other hand, the distance in which the light traveling in the oblique direction passes through the sealing resin 10 'is longer than the distance in which the light traveling in the oblique direction passes through the sealing resin 10'. The part is converted to yellow light. For this reason, there is a problem that even if white light is obtained in a direction perpendicular to the substrate 3, yellowish light is obtained in an oblique direction, which causes an angle dependence of the emission color.

【０１０５】それに対して、本実施形態の光源装置１で
は、ＬＥＤチップ２から放射された青色光を、封止樹脂
１０’内を進行する初期の段階で、テーパ面２５によっ
て基板３に対して垂直な方向へと反射させており、これ
によって封止樹脂１０’内を通過する距離を角度に関わ
らず略一定とすることができ、発光色の角度依存性を低
減することができる。On the other hand, in the light source device 1 of the present embodiment, the blue light emitted from the LED chip 2 is applied to the substrate 3 by the tapered surface 25 in the initial stage of traveling in the sealing resin 10 ′. The light is reflected in the vertical direction, whereby the distance passing through the sealing resin 10 'can be made substantially constant regardless of the angle, and the angle dependence of the emission color can be reduced.

【０１０６】また、凹所５’の底面を実施形態１４の光
源装置１に比べて広くしており、凹所５’の底面（平坦
面）に形成される配線パターン８の面積を広くしている
ので、配線パターン８にボンディングワイヤ９をボンデ
ィングしやすくなり、さらに封止樹脂１０’が充填され
る凹所５’の容積を大きくすることができるから、充填
量の制御が容易になる。The bottom surface of the recess 5 'is wider than that of the light source device 1 of the fourteenth embodiment, and the area of the wiring pattern 8 formed on the bottom surface (flat surface) of the recess 5' is increased. Therefore, the bonding wire 9 can be easily bonded to the wiring pattern 8, and the volume of the recess 5 'in which the sealing resin 10' is filled can be increased, so that the filling amount can be easily controlled.

【０１０７】（実施形態１６）本発明の実施形態１６を
図１６を参照して説明する。本実施形態の光源装置１で
は、実施形態１４の光源装置において凹所５’の側面形
状を２段構造としている。すな わち、凹所５’の内側
面には、凹所５’の底面側から開口側に行くにしたがっ
て内径が徐々に大きくなり、約４５度の角度で傾斜する
ようなテーパ面４ｂが形成され、テーパ面４ｂの先端部
から開口部にかけて、ＬＥＤチップ２からの光を所望の
方向に反射して集光できるような断面形状を有する反射
面４ｃが形成されている。また、絶縁部材４における基
板３と反対側の面には、一対の配線パターン８が突台部
１１を通る同一直線上に形成されており、反射面４ｃに
おける配線パターン８以外の部位には、例えば銀などの
高反射率の材料から形成された反射膜１８が形成されて
いる。そして、凹所５’内にはテーパ面４ｂの先端部に
達するまで封止樹脂１０’が注入されている。尚、凹所
５’の側面形状以外の構成は実施形態１４と同様である
ので、同一の構成要素には同一の符号を付して、その説
明は省略する。(Embodiment 16) Embodiment 16 of the present invention will be described with reference to FIG. In the light source device 1 according to the present embodiment, the side surface shape of the recess 5 ′ in the light source device according to the fourteenth embodiment has a two-stage structure. That is, the inner surface of the recess 5 'is provided with a tapered surface 4b whose inner diameter gradually increases from the bottom side to the opening side of the recess 5' and is inclined at an angle of about 45 degrees. A reflection surface 4c is formed and has a cross-sectional shape such that light from the LED chip 2 can be reflected and condensed in a desired direction from the tip of the tapered surface 4b to the opening. A pair of wiring patterns 8 are formed on the same straight line passing through the protrusion 11 on the surface of the insulating member 4 on the side opposite to the substrate 3. For example, a reflection film 18 made of a material having a high reflectance such as silver is formed. Then, the sealing resin 10 ′ is injected into the recess 5 ′ until it reaches the tip of the tapered surface 4 b. The configuration other than the side surface shape of the recess 5 ′ is the same as that of the fourteenth embodiment.

【０１０８】この光源装置１では、凹所５’の１段目か
ら外部へと取り出される光は、封止樹脂１０’中に蛍光
体粒子が分散されているため、完全拡散配光となってお
り、１段目から放射された光は非常に配光制御しやすく
なっているので、２段目の反射面４ｃの形状を変更する
ことによって、ＬＥＤチップ２からの光を所望の方向に
配光することができる。In the light source device 1, the light extracted from the first stage of the recess 5 'to the outside is a completely diffused light distribution because the phosphor particles are dispersed in the sealing resin 10'. Since the light emitted from the first stage is very easy to control the light distribution, the light from the LED chip 2 is distributed in a desired direction by changing the shape of the reflection surface 4c in the second stage. Can light.

【０１０９】（実施形態１７）本発明の実施形態１７を
図１７を参照して説明する。本実施形態の光源装置１
は、実施形態３で説明した光源装置１と同様の構造を有
しており、実施形態３では基板３にＬＥＤチップ２を１
個実装しているが、本実施形態では基板３にＬＥＤチッ
プ２を２個実装し、２個のＬＥＤチップ２を配線パター
ン８を介して直列に接続している。尚、光源装置１の基
本的な構成は実施形態３と同様であるので、同一の構成
要素には同一の符号を付して、その説明は省略する。(Embodiment 17) Embodiment 17 of the present invention will be described with reference to FIG. Light source device 1 of the present embodiment
Has a structure similar to that of the light source device 1 described in the third embodiment.
In this embodiment, two LED chips 2 are mounted on the substrate 3, and the two LED chips 2 are connected in series via the wiring pattern 8. Note that the basic configuration of the light source device 1 is the same as that of the third embodiment.

【０１１０】ところで、一般に光源装置１としては発光
部分以外の部位の面積を小さくするのが望ましいが、実
施形態３で説明した光源装置１の場合、配線パターン８
における絶縁部材４の上面に形成された部位を外部電源
に接続するための通電部としており、通電部が発光の取
り出し面側に位置しているため、通電部に通電するため
のコネクタなどの部品を光源装置１の前面（発光面）側
に配置する必要があり、これらの部品を配置するために
発光部分以外の部位の面積が増加するという問題があっ
た。In general, it is desirable to reduce the area of the portion other than the light emitting portion of the light source device 1, but in the case of the light source device 1 described in the third embodiment, the wiring pattern 8
Are formed on the upper surface of the insulating member 4 as an energizing portion for connecting to an external power supply. Since the energizing portion is located on the light extraction surface side, a component such as a connector for energizing the energizing portion is provided. Must be arranged on the front side (light emitting surface) side of the light source device 1, and there is a problem that the area of a part other than the light emitting part increases because these parts are arranged.

【０１１１】そこで、本実施形態の光源装置１では、絶
縁部材４に設けた３個の配線パターン８の内、一方のＬ
ＥＤチップ２のみに電気的に接続された両側の配線パタ
ーン８における絶縁部材４の上面（前面）に形成された
平坦部８ｃに対応する基板３の部位に基板３を貫通する
開口孔３ｃを設けており、この開口孔３ｃから露出する
絶縁部材４の部位に絶縁部材４と配線パターン８とを貫
通する貫通孔４ｅを設けている。そして、この貫通孔４
ｅ内に、導電材料から略棒状に形成された電極ピン２３
を絶縁部材４の上側から挿入して、電極ピン２３の先端
部を基板３の下面から突出させており、電極ピン２３の
先端を被固定部に固定すると、電極ピン２３と配線パタ
ーン８とが電気的に接続された状態で光源装置１が被固
定部に固定される。尚、貫通孔４ｅの孔径は開口孔３ｃ
の孔径よりも小さい寸法に形成されている。Therefore, in the light source device 1 of the present embodiment, one of the three wiring patterns 8 provided on the insulating member 4 has one L.
An opening 3c penetrating the substrate 3 is provided at a portion of the substrate 3 corresponding to the flat portion 8c formed on the upper surface (front surface) of the insulating member 4 in the wiring patterns 8 on both sides electrically connected only to the ED chip 2. In addition, a through hole 4e penetrating the insulating member 4 and the wiring pattern 8 is provided at a portion of the insulating member 4 exposed from the opening 3c. And this through hole 4
e, an electrode pin 23 formed in a substantially rod shape from a conductive material.
Is inserted from above the insulating member 4 so that the tip of the electrode pin 23 protrudes from the lower surface of the substrate 3. When the tip of the electrode pin 23 is fixed to the portion to be fixed, the electrode pin 23 and the wiring pattern 8 are connected. The light source device 1 is fixed to the fixed portion while being electrically connected. The diameter of the through hole 4e is equal to the diameter of the opening 3c.
Is formed to have a size smaller than the hole diameter of.

【０１１２】上述のように本実施形態では、配線パター
ン８に電気的に接続された電極ピン２３によって配線部
の一部を基板側に向かって延伸させており、基板側に延
伸された部分（すなわち電極ピン２３の先端部）を外部
接続端子として、外部から給電することによって、基板
３側からＬＥＤチップ２に給電することができる。した
がって、コネクタなどの給電部品を基板３側（発光面と
反対側）に配置することができ、発光の取り出し側から
見た時に発光部分以外の部位の面積が全体に占める割合
を低減でき、光源装置１の小型化を図るとともに、同じ
面積であれば発光出力を大きくすることができる。As described above, in the present embodiment, a part of the wiring portion is extended toward the substrate by the electrode pins 23 electrically connected to the wiring pattern 8, and the portion extended toward the substrate ( In other words, power can be supplied from the outside by using the tip of the electrode pin 23) as an external connection terminal, whereby power can be supplied to the LED chip 2 from the substrate 3 side. Accordingly, a power supply component such as a connector can be arranged on the substrate 3 side (the side opposite to the light emitting surface), and the ratio of the area other than the light emitting portion to the entire area when viewed from the light extraction side can be reduced. The size of the device 1 can be reduced, and the light emission output can be increased with the same area.

【０１１３】（実施形態１８）本発明の実施形態１８を
図１８を参照して説明する。本実施形態では、実施形態
３で説明した光源装置１において、基板３の突台部１１
を除いた部分を直径が約５ｍｍ、高さが約１０ｍｍの円
柱形状として、上面略中央に突台部１１を突設してい
る。一方、絶縁部材４の平面形状を一辺が約１０ｍｍの
正方形としており、絶縁部材４の前面側に形成した配線
パターン８を側面を通って裏面側まで延伸し、裏面側に
回り込むように延伸された部位を外部接続端子８ｄとし
ている。尚、基板３及び配線パターン８以外の構成は実
施形態３と同様であるので、同一の構成要素には同一の
符号を付して、その説明は省略する。(Embodiment 18) Embodiment 18 of the present invention will be described with reference to FIG. In the present embodiment, in the light source device 1 described in the third embodiment, the protrusion 11
The portion excluding is made into a cylindrical shape having a diameter of about 5 mm and a height of about 10 mm, and a projecting base 11 is protruded at substantially the center of the upper surface. On the other hand, the planar shape of the insulating member 4 is a square having a side of about 10 mm, and the wiring pattern 8 formed on the front surface side of the insulating member 4 is extended to the rear surface side through the side surface, and is extended so as to go around the rear surface side. The portion is an external connection terminal 8d. Since the configuration other than the substrate 3 and the wiring pattern 8 is the same as that of the third embodiment, the same components are denoted by the same reference numerals and description thereof will be omitted.

【０１１４】図１８は本実施形態の光源装置１を器具本
体４０に取り付けた状態を示している。器具本体４０
は、直径が約６ｍｍの丸孔４１が開口したガラスエポキ
シ製の配線基板４２を備え、丸孔４１内に光源装置１の
基板３を挿入して、絶縁部材４の裏面側に延伸された外
部接続端子８ｄを配線基板４２の上面に形成された配線
パターン４３に半田付けすることによって、光源装置１
が器具本体４０に電気的且つ機械的に結合される。この
時、丸孔４１から下方に突出する基板３の下面が器具本
体４０の放熱部品４４に熱結合されるので、光源装置１
の放熱性が向上する。このように、基板３の下面を配線
基板４２とは別に用意した放熱部品４４と接触させ、放
熱部品４４を介してＬＥＤチップ２の発熱を放熱してい
るので、配線基板４２には熱伝導性は低いものの安価な
ガラスエポキシ基板を用いることができ、コストダウン
を図ることができる。FIG. 18 shows a state in which the light source device 1 according to the present embodiment is attached to the instrument body 40. Instrument body 40
Is provided with a wiring board 42 made of glass epoxy and having a round hole 41 with a diameter of about 6 mm, in which the substrate 3 of the light source device 1 is inserted into the round hole 41, and the outside extended to the back side of the insulating member 4. By soldering the connection terminal 8d to the wiring pattern 43 formed on the upper surface of the wiring board 42, the light source device 1
Are electrically and mechanically coupled to the instrument body 40. At this time, the lower surface of the substrate 3 protruding downward from the round hole 41 is thermally coupled to the heat radiating component 44 of the fixture body 40, so that the light source device 1
Improves the heat dissipation. As described above, since the lower surface of the substrate 3 is brought into contact with the heat radiating component 44 prepared separately from the wiring substrate 42 and the heat generated by the LED chip 2 is radiated through the heat radiating component 44, the wiring substrate 42 has thermal conductivity. However, an inexpensive glass epoxy substrate can be used, and the cost can be reduced.

【０１１５】なお、本実施形態では基板３にＬＥＤチッ
プ２を１個だけ実装しているが、基板３に複数のＬＥＤ
チップ２を実装しても良いことは言うまでもない。In this embodiment, only one LED chip 2 is mounted on the substrate 3.
It goes without saying that the chip 2 may be mounted.

【０１１６】（実施形態１９）本発明の実施形態１９を
図１９を参照して説明する。本実施形態では、実施形態
３の光源装置１において、基板３の突台部１１を除いた
部分を直径が約５ｍｍ、高さが約０．５ｍｍの円柱形状
として、上面略中央に突台部１１を突設している。一
方、絶縁部材４の平面形状を一辺が約２０ｍｍの正方形
としており、基板３側の面に貫通孔６を中心とする直径
が約５ｍｍ、深さが約０．５ｍｍの凹部２７を設けてい
る。そして、絶縁部材４における凹部２７の外側の部位
であって、絶縁部材４の前面側に設けた配線パターン８
に対応する部位に絶縁部材４を貫通するスルーホール２
８を設け、スルーホール２８内に導電材料を充填して形
成された導電部８ｅを介して絶縁部材４の前面側に形成
された配線パターン８と裏面側に形成された接続端子８
ｆとを電気的に接続している。尚、基板３、絶縁部材４
及び配線パターン８以外の構成は実施形態３と同様であ
るので、同一の構成要素には同一の符号を付して、その
説明は省略する。(Embodiment 19) Embodiment 19 of the present invention will be described with reference to FIG. In the present embodiment, in the light source device 1 of the third embodiment, the portion of the substrate 3 excluding the protruding portion 11 is formed into a columnar shape having a diameter of about 5 mm and a height of about 0.5 mm. 11 are protruding. On the other hand, the planar shape of the insulating member 4 is a square having a side of about 20 mm, and a recess 27 having a diameter of about 5 mm centering on the through hole 6 and a depth of about 0.5 mm is provided on the surface on the substrate 3 side. . Then, the wiring pattern 8 provided on the front side of the insulating member 4 at a position outside the recess 27 in the insulating member 4.
Through hole 2 penetrating insulating member 4 at a portion corresponding to
8, a wiring pattern 8 formed on the front side of the insulating member 4 and a connection terminal 8 formed on the back side via a conductive portion 8e formed by filling a conductive material in the through hole 28.
f is electrically connected. In addition, the substrate 3, the insulating member 4,
The configuration other than the wiring pattern 8 is the same as that of the third embodiment.

【０１１７】図１９は本実施形態の光源装置１を器具本
体の配線基板４２に実装した状態を示している。ここ
で、基板３の下面と絶縁部材４の下面とが略面一になる
よう各部の寸法関係が設定されており、基板３を配線基
板４２上に載置すると、絶縁部材４に設けた接続端子８
ｆが配線基板４２に設けた配線パターン４３に電気的に
接続されるので、配線基板４２からＬＥＤチップ２に給
電することができる。したがって、この光源装置１を配
線基板４２に取り付けるにあたり、光源装置１を配線基
板４２のパターン面にそのまま実装することができ、し
かも基板３の下面が配線基板４２と接触するので、光源
装置１の放熱を配線基板４２を通じて放出することがで
き、放熱性の良好な表面実装形の光源装置１を実現でき
る。FIG. 19 shows a state in which the light source device 1 of the present embodiment is mounted on a wiring board 42 of an instrument body. Here, the dimensional relationship of each part is set such that the lower surface of the substrate 3 and the lower surface of the insulating member 4 are substantially flush. When the substrate 3 is mounted on the wiring board 42, the connection provided on the insulating member 4 Terminal 8
Since f is electrically connected to the wiring pattern 43 provided on the wiring board 42, power can be supplied from the wiring board 42 to the LED chip 2. Therefore, when attaching the light source device 1 to the wiring board 42, the light source device 1 can be directly mounted on the pattern surface of the wiring board 42, and the lower surface of the substrate 3 contacts the wiring board 42. The heat can be dissipated through the wiring board 42, and the surface-mounted light source device 1 having good heat dissipation can be realized.

【０１１８】なお、本実施形態では基板３にＬＥＤチッ
プ２を１個だけ実装しているが、基板３に複数のＬＥＤ
チップ２を実装しても良いことは言うまでもない。In this embodiment, only one LED chip 2 is mounted on the substrate 3.
It goes without saying that the chip 2 may be mounted.

【０１１９】（実施形態２０）本発明の実施形態２０を
図２０を参照して説明する。実施形態３の光源装置１で
は基板３の一面のみにＬＥＤチップ２を実装している
が、本実施形態の光源装置１では基板３の両面にＬＥＤ
チップ２を実装している。尚、基板３の両面にＬＥＤチ
ップ２を実装している点以外は実施形態３と同様である
ので、同一の構成要素には同一の符号を付して、その説
明は省略する。(Embodiment 20) Embodiment 20 of the present invention will be described with reference to FIG. In the light source device 1 according to the third embodiment, the LED chip 2 is mounted on only one surface of the substrate 3.
Chip 2 is mounted. The third embodiment is the same as the third embodiment except that the LED chips 2 are mounted on both surfaces of the substrate 3. Therefore, the same components are denoted by the same reference numerals and description thereof will be omitted.

【０１２０】この光源装置１では、基板３の両面に各２
個の突台部１１を突設している。絶縁部材４における基
板３の突台部１１に対応する部位には、基板３と反対側
の面に開放された凹所５’が形成されており、凹所５’
の底には絶縁部材４を貫通する貫通孔６が形成されてい
る。ここで、貫通孔６の孔径は約１ｍｍであり、突台部
１１の外径と略同じになっている。また凹所５’の底面
の内径は約２ｍｍであり、凹所５’の側壁は基板３側か
ら遠ざかるにしたがって内径が大きくなり、約４５度の
角度で傾斜するような断面形状に形成されている。In this light source device 1, each of the two
The protruding portions 11 protrude. At a portion of the insulating member 4 corresponding to the protruding portion 11 of the substrate 3, a recess 5 ′ that is open on the surface opposite to the substrate 3 is formed, and the recess 5 ′ is formed.
A through hole 6 penetrating through the insulating member 4 is formed at the bottom of the substrate. Here, the hole diameter of the through hole 6 is about 1 mm, which is substantially the same as the outer diameter of the protruding base 11. The inner diameter of the bottom surface of the concave portion 5 'is about 2 mm, and the side wall of the concave portion 5' is formed to have a cross-sectional shape such that the inner diameter increases as the distance from the substrate 3 side increases and is inclined at an angle of approximately 45 degrees. I have.

【０１２１】ここで、基板３及び絶縁部材４，４は貫通
孔６と突台部１１とを嵌合させた状態で接合されてお
り、貫通孔６から露出する突台部１１の部位には厚さが
約０．２ｍｍのＬＥＤチップ２が、銀ペーストのような
ダイボンディングペースト７を用いてダイボンドされて
いる。また絶縁部材４における基板３と反対側の面に
は、銅などの導電材料からなる配線パターン８が形成さ
れ、その表面には金めっきを施してある。配線パターン
８は凹所５’の側壁及び底面まで延設されており、凹所
５’の底面を構成する張出部４ａに形成された配線パタ
ーン８とＬＥＤチップ２の上面に形成された電極との間
は、例えば金のような金属細線からなるボンディングワ
イヤ９を介して電気的に接続されている。Here, the substrate 3 and the insulating members 4 and 4 are joined in a state where the through hole 6 and the projecting portion 11 are fitted to each other. An LED chip 2 having a thickness of about 0.2 mm is die-bonded using a die bonding paste 7 such as a silver paste. A wiring pattern 8 made of a conductive material such as copper is formed on a surface of the insulating member 4 opposite to the substrate 3, and the surface thereof is plated with gold. The wiring pattern 8 extends to the side wall and the bottom surface of the recess 5 ′, and the wiring pattern 8 formed on the overhang portion 4 a constituting the bottom surface of the recess 5 ′ and the electrode formed on the upper surface of the LED chip 2. Are electrically connected via a bonding wire 9 made of a thin metal wire such as gold.

【０１２２】上述のように、本実施形態の光源装置１で
は、絶縁部材４とＬＥＤチップ２と配線パターン８と封
止樹脂１０とが基板３の両面に設けられているので、Ｌ
ＥＤチップ２の発光を基板３の両面に放射させることが
できる。また、基板３の両面に同じ部品が配置されてい
るので、基板３の反りを抑制することもできる。As described above, in the light source device 1 of the present embodiment, since the insulating member 4, the LED chip 2, the wiring pattern 8, and the sealing resin 10 are provided on both surfaces of the substrate 3,
Light emitted from the ED chip 2 can be emitted to both surfaces of the substrate 3. Further, since the same components are arranged on both surfaces of the substrate 3, the warpage of the substrate 3 can be suppressed.

【０１２３】（実施形態２１）以下に、本実施形態の光
源装置１の製造方法を図２１（ａ）〜（ｅ）を参照して
説明する。尚、本実施形態の光源装置１の構造は実施形
態３と同様であるので、同一の構成要素には同一の符号
を付して、その説明を省略する。(Embodiment 21) Hereinafter, a method for manufacturing the light source device 1 according to the present embodiment will be described with reference to FIGS. Note that the structure of the light source device 1 of the present embodiment is the same as that of the third embodiment.

【０１２４】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、シ
ンジオタクチックポリスチレン（以下ＳＰＳと記す）、
ポリブチレンテレフタレート（以下ＰＢＴと記す）など
の絶縁材料から形成されたＭＩＤ（Molded Interconnec
t Device）を用いており、射出成形或いはトランスファ
ー成形によって凹所５’及び貫通孔６を形成している
（図２１（ａ）参照）。そして、絶縁部材４の表面全体
に、真空蒸着、ＤＣスパッタリング法、或いは、ＲＦス
パッタリング法を用いて膜厚が例えば０．３μｍの銅薄
膜を形成する。次に、銅薄膜を形成した基板３の表面に
レーザ等の電磁波を照射して、電磁波を照射した部分の
めっき下地層を除去する。尚、この時照射するレーザと
しては、第２或いは第３高調波ＹＡＧレーザ、ＹＡＧレ
ーザなどめっき下地材の吸収が良いものが好ましく、例
えばガルバノミラーで走査することによって、回路部
（配線パターン８）以外の絶縁スペースとなる部位（以
下、非回路部と言う）に照射されるものであり、少なく
とも非回路部における回路部との境界部分に非回路部の
パターンに沿って照射することにより、非回路部におけ
る回路部との境界領域のめっき下地層を除去するもので
ある。その後、回路部に給電して、電気銅めっき、電気
ニッケルめっき、電気銀めっきなどを行い、所定の膜厚
の金属膜を形成した配線パターン８を形成した後、非回
路部をソフトエッチングなどで除去する（図２１（ｂ）
参照）。尚、電気銀めっきの代わりに電気金めっきを施
しても良く、光の反射効率や配線作業性を考慮してめっ
きの材料や厚みを適宜決定すれば良い。As the insulating member 4, for example, a liquid crystal polymer, polyphthalamide, polyphthalsulfone, epoxy, syndiotactic polystyrene (hereinafter referred to as SPS),
MID (Molded Interconnec) formed from an insulating material such as polybutylene terephthalate (hereinafter referred to as PBT)
t Device), and the recess 5 ′ and the through hole 6 are formed by injection molding or transfer molding (see FIG. 21A). Then, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the substrate 3 on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser, and the plating underlayer in the portion irradiated with the electromagnetic wave is removed. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section. Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed. Remove (FIG. 21B)
reference). Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【０１２５】次に、アルミニウム、銀、銅など熱伝導性
の良好な材料から形成された基板３を、エポキシ樹脂や
アクリル樹脂などの接着剤を用いて、絶縁部材４の下面
に貼り付ける（図２１（ｃ）参照）。この時、絶縁部材
４の貫通孔６に対応する基板３の部位に予め突台部１１
を形成しておくのが望ましい。また、接着剤を用い基板
３及び絶縁部材４を貼り合わせる代わりに、突台部１１
を貫通孔６に圧入することによって、基板３及び絶縁部
材４を結合するようにしても良い。Next, the substrate 3 made of a material having good heat conductivity such as aluminum, silver, and copper is attached to the lower surface of the insulating member 4 using an adhesive such as an epoxy resin or an acrylic resin (see FIG. 21 (c)). At this time, a projecting part 11 is previously provided in a portion of the substrate 3 corresponding to the through hole 6 of the insulating member 4.
Is desirably formed. Also, instead of bonding the substrate 3 and the insulating member 4 using an adhesive, the
May be press-fitted into the through holes 6 to couple the substrate 3 and the insulating member 4.

【０１２６】その後、絶縁部材４に設けた貫通孔６から
露出する基板３の部位に、青色ＬＥＤチップ２を透光性
を有する接着剤を用いてダイボンドし、直径が例えば２
５μｍの金のボンディングワイヤ９を用いてワイヤボン
ディングを行う（図２１（ｄ）参照）。Thereafter, the blue LED chip 2 is die-bonded to a portion of the substrate 3 exposed from the through hole 6 provided in the insulating member 4 by using a translucent adhesive, and has a diameter of, for example, 2 mm.
Wire bonding is performed using a 5 μm gold bonding wire 9 (see FIG. 21D).

【０１２７】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
１（ｅ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by the blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in the resin is injected into the recess 5 ′.
The ED chip 2 and the bonding wires 9 are sealed (FIG. 2
1 (e)).

【０１２８】従来の光源装置では絶縁部材に切削加工を
施してＬＥＤチップ２の実装部位を形成しているため、
加工費用が高く、しかもＬＥＤチップ２の実装部位に切
削傷ができるなどして面粗度が粗くなるため、ＬＥＤチ
ップ２のボンディング作業がやりにくいという問題があ
るが、本実施形態では、上述のように基板３と絶縁部材
４とを接合し、絶縁部材４の貫通孔６から露出する基板
３の部位にＬＥＤチップ２を実装しているので、加工費
用を低減でき、またＬＥＤチップ２の実装部位が平坦で
あり、且つ、絶縁部材４がＭＩＤにより構成されている
から、ボンディングワイヤ９が接続されるパッド面が平
坦で平面度が良く、ＬＥＤチップ２を容易に実装でき
る。また、ボンディングワイヤ９は凹所５’内に納めら
れるので、凹所５’内に充填した封止樹脂１０’からボ
ンディングワイヤ９がはみ出ることはなく、ボンディン
グワイヤ９が断線する確率が少なくなり、信頼性が向上
する。In the conventional light source device, since the insulating member is cut to form the mounting portion of the LED chip 2,
Although the processing cost is high, and the surface roughness becomes rough due to cutting scratches on the mounting portion of the LED chip 2, there is a problem that the bonding work of the LED chip 2 is difficult to perform. As described above, the substrate 3 and the insulating member 4 are joined, and the LED chip 2 is mounted on the portion of the substrate 3 exposed from the through hole 6 of the insulating member 4, so that the processing cost can be reduced and the mounting of the LED chip 2 can be achieved. Since the portion is flat and the insulating member 4 is made of MID, the pad surface to which the bonding wire 9 is connected is flat and has good flatness, and the LED chip 2 can be easily mounted. In addition, since the bonding wire 9 is accommodated in the recess 5 ′, the bonding wire 9 does not protrude from the sealing resin 10 ′ filled in the recess 5 ′, and the probability of breaking the bonding wire 9 is reduced. Reliability is improved.

【０１２９】（実施形態２２）以下に、本実施形態の光
源装置の製造方法を図２２（ａ）〜（ｄ）を参照して説
明する。尚、本実施形態の光源装置１の構造は実施形態
３の光源装置と同様であるので、同一の構成要素には同
一の符号を付して、その説明を省略する。(Embodiment 22) A method of manufacturing a light source device according to the present embodiment will be described below with reference to FIGS. Since the structure of the light source device 1 of the present embodiment is the same as that of the light source device of the third embodiment, the same components are denoted by the same reference numerals, and description thereof will be omitted.

【０１３０】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、Ｓ
ＰＳ、ＰＢＴなどの絶縁材料から形成されたＭＩＤを用
いている。また、基板３の材料として銀、アルミ、銅な
どの熱伝導性の良好な材料を用い、基板３と絶縁部材４
とをインサート成形により同時に形成する（図２２
（ａ）参照）。As the insulating member 4, for example, a liquid crystal polymer, polyphthalamide, polyphthalsulfone, epoxy, S
An MID formed from an insulating material such as PS or PBT is used. In addition, a material having good thermal conductivity such as silver, aluminum, or copper is used as the material of the substrate 3, and the substrate 3 and the insulating member 4 are used.
Are simultaneously formed by insert molding (FIG. 22).
(A)).

【０１３１】その後、絶縁部材４の表面全体に、真空蒸
着、ＤＣスパッタリング法、或いは、ＲＦスパッタリン
グ法を用いて膜厚が例えば０．３μｍの銅薄膜を形成す
る。次に、銅薄膜を形成した基板３の表面にレーザ等の
電磁波を照射して、電磁波を照射した部分のめっき下地
層を除去する。尚、この時照射するレーザとしては、第
２或いは第３高調波ＹＡＧレーザ、ＹＡＧレーザなどめ
っき下地材の吸収が良いものが好ましく、例えばガルバ
ノミラーで走査することによって、回路部（配線パター
ン８）以外の絶縁スペースとなる部位（以下、非回路部
と言う）に照射されるものであり、少なくとも非回路部
における回路部との境界部分に非回路部のパターンに沿
って照射することにより、非回路部における回路部との
境界領域のめっき下地層を除去するものである。その
後、回路部に給電して、電気銅めっき、電気ニッケルめ
っき、電気銀めっきなどを行い、所定の膜厚の金属膜を
形成した配線パターン８を形成した後、非回路部をソフ
トエッチングなどで除去する（図２２（ｂ）参照）。
尚、電気銀めっきの代わりに電気金めっきを施しても良
く、光の反射効率や配線作業性を考慮してめっきの材料
や厚みを適宜決定すれば良い。Thereafter, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the substrate 3 on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser, and the plating underlayer in the portion irradiated with the electromagnetic wave is removed. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section. Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed to form a wiring pattern 8 having a metal film having a predetermined thickness, and then the non-circuit portion is subjected to soft etching or the like. It is removed (see FIG. 22B).
Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【０１３２】その後、絶縁部材４に設けた貫通孔６から
露出する基板３の部位に、青色ＬＥＤチップ２を透光性
を有する接着剤を用いてダイボンドし、直径が例えば２
５μｍの金のボンディングワイヤ９を用いてワイヤボン
ディングを行う（図２２（ｃ）参照）。Thereafter, the blue LED chip 2 is die-bonded to a portion of the substrate 3 exposed from the through-hole 6 provided in the insulating member 4 by using a translucent adhesive, and has a diameter of, for example, 2 mm.
Wire bonding is performed using a 5 μm gold bonding wire 9 (see FIG. 22C).

【０１３３】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
２（ｄ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by the blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in the resin is injected into the recess 5 ′,
The ED chip 2 and the bonding wires 9 are sealed (FIG. 2
2 (d)).

【０１３４】ところで、従来の光源装置では絶縁部材に
切削加工を施してＬＥＤチップ２の実装部位を形成して
いるため、加工費用が高く、しかもＬＥＤチップ２の実
装部位に切削傷ができるなどして面粗度が粗くなるた
め、ＬＥＤチップ２のボンディング作業がやりにくいと
いう問題があるが、本実施形態では、上述のように基板
３と絶縁部材４とをインサート成形し、絶縁部材４の貫
通孔６から露出する基板３の部位にＬＥＤチップ２を実
装しているので、ＬＥＤチップ２が実装される基板３の
部位が平坦であり、且つ、絶縁部材４をＭＩＤにより構
成しているので、ボンディングワイヤ９が接続されるパ
ッド面が平坦で平面度が良く、ＬＥＤチップ２を容易に
実装できる。また、ボンディングワイヤ９は凹所５’内
に納められるので、凹所５’内に充填した封止樹脂１
０’からボンディングワイヤ９がはみ出ることはなく、
ボンディングワイヤ９が断線する確率が少なくなり、信
頼性が向上する。また、基板３と絶縁部材４とをインサ
ート成形により形成しているので、基板３及び絶縁部材
４を接合する工程を無くすことができ、製造コストを低
減できる。By the way, in the conventional light source device, since the insulating member is cut to form the mounting portion of the LED chip 2, the processing cost is high, and the mounting portion of the LED chip 2 is cut. However, in this embodiment, the substrate 3 and the insulating member 4 are insert-molded as described above, and the penetration of the insulating member 4 is performed. Since the LED chip 2 is mounted on the portion of the substrate 3 exposed from the hole 6, the portion of the substrate 3 on which the LED chip 2 is mounted is flat, and the insulating member 4 is formed by MID. The pad surface to which the bonding wire 9 is connected is flat and has good flatness, so that the LED chip 2 can be easily mounted. Since the bonding wire 9 is accommodated in the recess 5 ', the sealing resin 1 filled in the recess 5' is formed.
The bonding wire 9 does not protrude from 0 ',
The probability that the bonding wire 9 is broken is reduced, and the reliability is improved. Further, since the substrate 3 and the insulating member 4 are formed by insert molding, the step of joining the substrate 3 and the insulating member 4 can be eliminated, and the manufacturing cost can be reduced.

【０１３５】（実施形態２３）以下に、本実施形態の光
源装置の製造方法を図２３（ａ）〜（ｄ）を参照して説
明する。尚、本実施形態の光源装置１の構造は実施形態
３の光源装置と略同様であるので、同一の構成要素には
同一の符号を付して、その説明を省略する。(Embodiment 23) A method of manufacturing a light source device according to this embodiment will be described below with reference to FIGS. Note that the structure of the light source device 1 of the present embodiment is substantially the same as that of the light source device of the third embodiment, and therefore, the same components are denoted by the same reference numerals and description thereof will be omitted.

【０１３６】先ず厚みが約１ｍｍのリードフレーム２０
ａを打ち抜いて、曲げ等の形状を形成することにより、
突台部１１の突設された基板３を形成すると共に、厚み
が約０．２ｍｍのリードフレーム２０ｂを打ち抜いて、
曲げ等の形状を形成することにより、突台部１１を挿通
させる挿通孔８ａが形成された配線部８’を形成してい
る（図２３（ａ）参照）。尚、リードフレーム２０ａ，
２０ｂの材料としては、例えば銅、４２アロイなど導電
性、熱伝導性の優れた材料を用いている。First, the lead frame 20 having a thickness of about 1 mm
By punching out a and forming a shape such as bending,
Forming the substrate 3 on which the protruding portion 11 is provided, and punching out a lead frame 20b having a thickness of about 0.2 mm,
By forming a shape such as bending, a wiring portion 8 'in which an insertion hole 8a through which the protruding portion 11 is inserted is formed (see FIG. 23A). Note that the lead frames 20a,
As the material of 20b, a material having excellent conductivity and heat conductivity such as copper and 42 alloy is used.

【０１３７】そして、ＬＥＤチップ２がダイボンドされ
る突台部１１と、ボンディングワイヤ９の接続される配
線部８’の部位に部分的に電気ニッケルめっき、電気銀
めっきを行う。尚、ボンディングワイヤ９が接続される
ワイヤパッド部８ｂは、電気銀めっきの代わりに電気金
めっきを施しても良く、ボンディングワイヤ９の接続作
業を容易に行える（図２３（ｂ）参照）。Then, an electric nickel plating and an electric silver plating are partially applied to the protruding base 11 to which the LED chip 2 is die-bonded and the wiring section 8 'to which the bonding wire 9 is connected. The wire pad portion 8b to which the bonding wire 9 is connected may be plated with gold instead of silver, so that the bonding wire 9 can be easily connected (see FIG. 23B).

【０１３８】次に、ＭＩＤの材料として液晶ポリマー、
ポリフタルアミド、ポリフタルサルフォン、エポキシ、
ＳＰＳ、ＰＢＴなどの絶縁性を有する材料を用い、部分
めっきの施された配線部８’と基板３とをインサート成
形により同時成形する（図２３（ｃ）参照）。この時、
ＭＩＤからなる絶縁部材４に形成された凹所５’の底面
に、基板３の突台部１１と配線部８’のワイヤパッド部
８ｂとが露出する。Next, a liquid crystal polymer as a material of the MID,
Polyphthalamide, polyphthalsulfone, epoxy,
Using a material having an insulating property such as SPS or PBT, the wiring portion 8 'partially plated and the substrate 3 are simultaneously molded by insert molding (see FIG. 23C). At this time,
On the bottom surface of the concave portion 5 'formed in the insulating member 4 made of MID, the projecting base 11 of the substrate 3 and the wire pad portion 8b of the wiring portion 8' are exposed.

【０１３９】その後、基板３の突台部１１に青色ＬＥＤ
チップ２を透光性を有する接着剤を用いてダイボンド
し、直径が例えば２５μｍの金のボンディングワイヤ９
を用いてワイヤボンディングを行う（図２３（ｄ）参
照）。After that, the blue LED is
The chip 2 is die-bonded using a translucent adhesive and a gold bonding wire 9 having a diameter of, for example, 25 μm.
Is used to perform wire bonding (see FIG. 23D).

【０１４０】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
３（ｅ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in a resin is injected into the recess 5 ′,
The ED chip 2 and the bonding wires 9 are sealed (FIG. 2
3 (e)).

【０１４１】ところで、従来の光源装置では絶縁部材に
切削加工を施してＬＥＤチップ２の実装部位を形成して
いるため、加工費用が高く、しかもＬＥＤチップ２の実
装部位に切削傷ができるなどして面粗度が粗くなるた
め、ＬＥＤチップ２のボンディング作業がやりにくいと
いう問題があるが、本実施形態では、上述のように基板
３と絶縁部材４とをインサート成形し、絶縁部材４に設
けた凹所５’内に露出する基板３の部位にＬＥＤチップ
２を実装しているので、ＬＥＤチップ２の実装部位が平
坦であり、且つ、絶縁部材４がＭＩＤにより構成されて
いるから、ボンディングワイヤ９が接続されるパッド面
が平坦で平面度が良く、ＬＥＤチップ２を容易に実装で
きる。また、ボンディングワイヤ９は凹所５’内に納め
られるので、凹所５’内に充填した封止樹脂１０’から
ボンディングワイヤ９がはみ出ることはなく、ボンディ
ングワイヤ９が断線する確率が少なくなり、信頼性が向
上する。また、基板３と絶縁部材４とをインサート成形
により形成しているので、基板３及び絶縁部材４を接合
する工程を無くすことができ、製造コストを低減でき
る。By the way, in the conventional light source device, since the insulating member is cut to form the mounting portion of the LED chip 2, the processing cost is high, and the mounting portion of the LED chip 2 is cut. However, in this embodiment, the substrate 3 and the insulating member 4 are insert-molded and provided on the insulating member 4 as described above. Since the LED chip 2 is mounted on the portion of the substrate 3 exposed in the recess 5 ′, the mounting portion of the LED chip 2 is flat, and the insulating member 4 is formed by MID. The pad surface to which the wire 9 is connected is flat and has good flatness, so that the LED chip 2 can be easily mounted. In addition, since the bonding wire 9 is accommodated in the recess 5 ′, the bonding wire 9 does not protrude from the sealing resin 10 ′ filled in the recess 5 ′, and the probability of breaking the bonding wire 9 is reduced. Reliability is improved. Further, since the substrate 3 and the insulating member 4 are formed by insert molding, the step of joining the substrate 3 and the insulating member 4 can be eliminated, and the manufacturing cost can be reduced.

【０１４２】（実施形態２４）以下に、本実施形態の光
源装置の製造方法を図２４（ａ）〜（ｆ）を参照して説
明する。尚、本実施形態の光源装置の構造は実施形態６
の光源装置と同様であるので、同一の構成要素には同一
の符号を付してその説明を省略する。(Embodiment 24) A method of manufacturing a light source device according to the present embodiment will be described below with reference to FIGS. The structure of the light source device of the present embodiment is the same as that of the light source device of the sixth embodiment.
Therefore, the same components are denoted by the same reference numerals, and description thereof is omitted.

【０１４３】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、Ｓ
ＰＳ、ＰＢＴなどの絶縁材料から形成されたＭＩＤを用
いている。また、ベース板３’の材料として銀、アル
ミ、銅などの熱伝導性の良好な材料を用い、ベース板
３’と絶縁部材４とをインサート成形により同時に形成
する（図２４（ａ）参照）。As the insulating member 4, for example, a liquid crystal polymer, polyphthalamide, polyphthalsulfone, epoxy, S
An MID formed from an insulating material such as PS or PBT is used. A material having good heat conductivity such as silver, aluminum, or copper is used as the material of the base plate 3 ', and the base plate 3' and the insulating member 4 are simultaneously formed by insert molding (see FIG. 24A). .

【０１４４】その後、絶縁部材４の表面全体に、真空蒸
着、ＤＣスパッタリング法、或いは、ＲＦスパッタリン
グ法を用いて膜厚が例えば０．３μｍの銅薄膜を形成す
る。次に、銅薄膜を形成したベース板３’の表面にレー
ザ等の電磁波を照射して、電磁波を照射した部分のめっ
き下地層を除去する。尚、この時照射するレーザとして
は、第２或いは第３高調波ＹＡＧレーザ、ＹＡＧレーザ
などめっき下地材の吸収が良いものが好ましく、例えば
ガルバノミラーで走査することによって、回路部（配線
パターン８）以外の絶縁スペースとなる部位（以下、非
回路部と言う）に照射されるものであり、少なくとも非
回路部における回路部との境界部分に非回路部のパター
ンに沿って照射することにより、非回路部における回路
部との境界領域のめっき下地層を除去するものである。
その後、回路部に給電して、電気銅めっき、電気ニッケ
ルめっき、電気銀めっきなどを行い、所定の膜厚の金属
膜を形成した配線パターン８を形成した後、非回路部を
ソフトエッチングなどで除去する（図２４（ｂ）参
照）。尚、電気銀めっきの代わりに電気金めっきを施し
ても良く、光の反射効率や配線作業性を考慮してめっき
の材料や厚みを適宜決定すれば良い。After that, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the base plate 3 'on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser to remove the plating underlayer in the portion irradiated with the electromagnetic wave. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section.
Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed to form a wiring pattern 8 having a metal film having a predetermined thickness, and then the non-circuit portion is subjected to soft etching or the like. It is removed (see FIG. 24B). Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【０１４５】次に、アルミニウムや銅などの熱伝導性の
良好な金属から柱状（角柱又は円柱）の熱伝導体１４を
形成し、熱伝導体１４の上面にＬＥＤチップ２を透光性
を有するボンディングペーストを用いてダイボンドした
後（図２４（ｃ）参照）、ベース板３’及び絶縁部材４
にそれぞれ形成された連通孔１３及び貫通孔６内にベー
ス板３’側からＬＥＤチップ２の実装された熱伝導体１
４を圧入する（図２４（ｄ）参照）。この時、熱伝導体
１４はベース板３’に設けた連通孔１３内に圧入されて
いるので、熱伝導体１４とベース板３’とが密着し、熱
伝導体１４とベース板３’との間の熱伝導が大きくな
る。Next, a columnar (square or cylindrical) heat conductor 14 is formed from a metal having good heat conductivity such as aluminum or copper, and the LED chip 2 is provided on the upper surface of the heat conductor 14 with a light-transmitting property. After die bonding using a bonding paste (see FIG. 24C), the base plate 3 ′ and the insulating member 4
The heat conductor 1 on which the LED chip 2 is mounted from the side of the base plate 3 'in the communication hole 13 and the through hole 6 respectively formed in
4 (see FIG. 24D). At this time, since the heat conductor 14 is press-fitted into the communication hole 13 provided in the base plate 3 ', the heat conductor 14 and the base plate 3' come into close contact with each other, and the heat conductor 14 and the base plate 3 ' During the heat transfer.

【０１４６】その後、ＬＥＤチップ２上面の電極と配線
パターン８との間を、直径が例えば２５μｍの金のボン
ディングワイヤ９を介して接続し（図２４（ｅ）参
照）、ＬＥＤチップ２の青色発光により励起され補色で
ある黄色発光を行う蛍光体粒子を樹脂中に分散させた封
止樹脂１０’を凹所５’に注入して、ＬＥＤチップ２や
ボンディングワイヤ９を封止する（図２４（ｆ）参
照）。Thereafter, the electrode on the upper surface of the LED chip 2 and the wiring pattern 8 are connected via a gold bonding wire 9 having a diameter of, for example, 25 μm (see FIG. 24 (e)), and the LED chip 2 emits blue light. The LED chip 2 and the bonding wire 9 are sealed by injecting the sealing resin 10 ′ in which the phosphor particles that emit the complementary color yellow that are excited by the above are dispersed in the resin, into the recess 5 ′ (FIG. 24 ( f)).

【０１４７】本実施形態では上述の製造方法を用いて光
源装置１を製造しており、熱伝導体１４にＬＥＤチップ
２を予め実装しているので、ＬＥＤチップ２のダイボン
ドされる熱伝導体１４の部位を平坦にし、且つ平面度を
良くできるので、ＬＥＤチップ２を容易に実装すること
ができる。また、ＬＥＤチップ２が実装される突台部１
１を、熱伝導体１４をベース板３’に設けた連通孔１３
内に圧入することにより形成しているので、突台部１１
を切削加工により形成する場合に比べて、加工費用を低
減できる。In this embodiment, the light source device 1 is manufactured using the above-described manufacturing method, and the LED chip 2 is mounted on the heat conductor 14 in advance. Can be flattened and the flatness can be improved, so that the LED chip 2 can be easily mounted. In addition, the protrusion 1 on which the LED chip 2 is mounted
1, a communication hole 13 provided with a heat conductor 14 in a base plate 3 '.
It is formed by press-fitting into
The machining cost can be reduced as compared with the case where is formed by cutting.

【０１４８】尚、上述した各実施形態において各部の寸
法を説明しているが、各部の寸法を上記の寸法に限定す
る趣旨のものではなく、各部の寸法は適宜設定すれば良
い。Although the dimensions of each part have been described in the above embodiments, the dimensions of each part are not intended to be limited to the above dimensions, and the dimensions of each part may be set as appropriate.

【０１４９】[0149]

【発明の効果】上述のように、請求項１の発明は、熱伝
導性を有する基板と、基板の少なくとも一方の面に配設
された絶縁部材と、基板と対向する絶縁部材の部位に絶
縁部材を貫通して設けられた孔と、この孔から露出する
基板の部位に対向させ且つ熱結合させて配置されたＬＥ
Ｄチップと、絶縁部材に設けられ絶縁部材によって基板
と電気的に絶縁された配線部を含む給電部と、給電部と
ＬＥＤチップの電極との間を電気的に接続する接続部材
と、孔内に充填されＬＥＤチップ及び接続部材の全体を
封止する透光性を有する封止材料とを備えて成ることを
特徴とし、ＬＥＤチップは絶縁部材に設けた孔から露出
する基板の部位に対向させ且つ熱結合させて配置されて
いるので、熱伝導性を有する基板を介してＬＥＤチップ
の発熱を放出することができ、放熱性を向上させた光源
装置を実現できる。したがって、ＬＥＤチップの温度上
昇が抑制され、温度上昇による発光効率の低下を防止す
ることができるという効果がある。しかもＬＥＤチップ
の温度上昇が低減されるから、より大きな順方向電流を
ＬＥＤチップに印加して、ＬＥＤチップの光出力を増大
させることもでき、またＬＥＤチップや封止材料の熱的
な劣化が低減され、長寿命化が図れるという効果もあ
る。さらに、孔内に充填された封止材料によってＬＥＤ
チップ及び接続部材の全体を封止しており、ＬＥＤチッ
プと給電部とを電気的に接続する接続部材として金属線
を用いた場合にも、樹脂の界面で発生する応力によって
金属線が断線する虞はなく、機械的強度が向上するとい
う効果もある。As described above, according to the first aspect of the present invention, a substrate having thermal conductivity, an insulating member provided on at least one surface of the substrate, and a portion of the insulating member facing the substrate are insulated. A hole provided through the member, and an LE which is disposed so as to face and thermally bond to a portion of the substrate exposed from the hole.
A power supply unit including a D chip, a wiring unit provided on the insulation member and electrically insulated from the substrate by the insulation member, a connection member for electrically connecting the power supply unit and an electrode of the LED chip, And a light-transmissive sealing material that seals the entire LED chip and the connection member. The LED chip faces a portion of the substrate exposed from a hole provided in the insulating member. In addition, since the LED chips are arranged so as to be thermally coupled, the heat generated by the LED chips can be emitted through the substrate having thermal conductivity, and a light source device with improved heat dissipation can be realized. Therefore, there is an effect that the temperature rise of the LED chip is suppressed, and a decrease in luminous efficiency due to the temperature rise can be prevented. In addition, since the temperature rise of the LED chip is reduced, a larger forward current can be applied to the LED chip to increase the light output of the LED chip, and the thermal deterioration of the LED chip and the sealing material can be reduced. There is also an effect that the lifetime can be reduced and the life can be extended. Further, the LED is filled with a sealing material filled in the hole.
The entirety of the chip and the connection member is sealed, and even when a metal wire is used as a connection member for electrically connecting the LED chip and the power supply unit, the metal wire is disconnected due to the stress generated at the resin interface. There is no fear, and there is also an effect that the mechanical strength is improved.

【０１５０】請求項２の発明は、請求項１の発明におい
て、ＬＥＤチップに接続部材を介して電気的に接続され
る配線部の部位は孔内に配置されており、絶縁部材にお
ける基板と反対側の面よりも基板側に位置することを特
徴とし、請求項１の発明と同様、封止材料によってＬＥ
Ｄチップ及び接続部材の全体を封止することができ、Ｌ
ＥＤチップと給電部とを電気的に接続する接続部材とし
て金属線を用いた場合にも、樹脂の界面で発生する応力
によって金属線が断線する虞はなく、機械的強度が向上
するという効果がある。According to a second aspect of the present invention, in the first aspect of the present invention, the portion of the wiring portion electrically connected to the LED chip via the connecting member is disposed in the hole, and is opposite to the substrate of the insulating member. Characterized in that it is located closer to the substrate than the side surface, and like the invention of claim 1, the LE
The entirety of the D chip and the connection member can be sealed,
Even when a metal wire is used as a connection member for electrically connecting the ED chip and the power supply unit, there is no possibility that the metal wire is disconnected due to the stress generated at the resin interface, and the effect of improving the mechanical strength is obtained. is there.

【０１５１】請求項３の発明は、請求項１の発明におい
て、ＬＥＤチップに接続部材を介して電気的に接続され
る配線部の部位は孔内に配置されており、封止材料は孔
の開口付近まで充填されたことを特徴とし、封止材料の
表面が孔の開口付近にくるまで封止材料を充填すること
によって、封止材料の充填量を略一定とすることがで
き、品質のばらつきを抑制できるという効果がある。According to a third aspect of the present invention, in the first aspect of the present invention, the portion of the wiring portion electrically connected to the LED chip via the connection member is disposed in the hole, and the sealing material is formed in the hole. It is characterized by being filled to the vicinity of the opening, and by filling the sealing material until the surface of the sealing material comes to the vicinity of the opening of the hole, the filling amount of the sealing material can be made substantially constant. There is an effect that variation can be suppressed.

【０１５２】請求項４の発明は、請求項１の発明におい
て、絶縁部材に設けた孔の基板側の開口縁に内側に突出
する張出部を設け、この張出部に配線部の少なくとも一
部を配置し、張出部に配置された配線部の部位にＬＥＤ
チップの電極を電気的に接続しており、絶縁部材側に突
出し絶縁部材に設けた孔内に挿入される突台部を基板に
設け、この突台部にＬＥＤチップを対向させ且つ熱結合
させて配置したことを特徴とし、基板に突台部を設ける
ことによって、突台部の高さ分だけ張出部の厚み寸法を
厚くすることができるから、張出部の加工を容易に行
え、且つ、張出部の厚み寸法を厚くすることによって、
張出部の剛性を高くし、基板と絶縁部材とを接合する際
に張出部と基板との間に隙間ができるのを防止できると
いう効果がある。According to a fourth aspect of the present invention, in the first aspect of the present invention, an inwardly projecting portion is provided at an opening edge of the hole provided in the insulating member on the substrate side, and at least one of the wiring portions is provided in the overhanging portion. And place the LED on the part of the wiring part arranged on the overhang
An electrode of the chip is electrically connected, a protruding portion protruding toward the insulating member and inserted into a hole provided in the insulating member is provided on the substrate, and the LED chip is opposed to the protruding portion and thermally bonded. It is characterized by the fact that it is arranged, and by providing the protruding portion on the substrate, the thickness of the overhanging portion can be increased by the height of the protruding portion, so that the overhanging portion can be easily processed, And by increasing the thickness of the overhang,
This has the effect of increasing the rigidity of the overhanging portion and preventing the formation of a gap between the overhanging portion and the substrate when joining the substrate and the insulating member.

【０１５３】請求項５の発明は、請求項４の発明におい
て、上記接続部材は金属線からなり、基板及び絶縁部材
の接合方向において、金属線の一端が接続されるＬＥＤ
チップの部位と、金属線の他端が接続される配線部の部
位の高さを略同じ高さとしたことを特徴とし、ＬＥＤチ
ップと配線部との間を電気的に接続する金属線の長さを
短くできるから、金属線の機械的強度を高くでき、また
ＬＥＤチップと配線部の高さを略同じ高さとすることに
より、ボンディング作業を容易に行えるという効果があ
る。According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the connecting member is made of a metal wire, and one end of the metal wire is connected to the substrate in the joining direction of the insulating member.
The height of the portion of the chip and the portion of the wiring portion to which the other end of the metal wire is connected are substantially the same height, and the length of the metal wire for electrically connecting the LED chip and the wiring portion is set. Since the height can be shortened, the mechanical strength of the metal wire can be increased, and the bonding operation can be easily performed by making the height of the LED chip and the wiring portion approximately the same.

【０１５４】請求項６の発明は、請求項４の発明におい
て、基板及び絶縁部材の接合方向において、ＬＥＤチッ
プが実装される突台部と、ＬＥＤチップに電気的に接続
される配線部の部位の高さを略同じ高さとしたことを特
徴とし、ＬＥＤチップから放射される光が配線部に遮光
されることはなく、光のけられを少なくして、光の取り
出し効率が向上するという効果がある。According to a sixth aspect of the present invention, in the fourth aspect of the present invention, in the joining direction of the substrate and the insulating member, the projecting portion on which the LED chip is mounted and the portion of the wiring portion electrically connected to the LED chip. The feature is that the height of the LED chip is approximately the same, and the light radiated from the LED chip is not blocked by the wiring part, reducing the light leakage and improving the light extraction efficiency. There is.

【０１５５】請求項７の発明は、請求項４の発明におい
て、突台部は、基板における絶縁部材と反対側の面から
打ち出し加工を行って凹所を形成することにより、基板
における絶縁部材側の面に打ち出されたことを特徴と
し、打ち出し加工を行うことによって突台部を形成して
いるので、切削加工により突台部を形成する場合に比べ
て加工費用を低減できるという効果がある。また、基板
と絶縁部材とを接着剤で貼り合わせた場合、接着剤の熱
収縮によって基板全体が絶縁部材側に反ってしまうが、
打ち出し加工を行って凹所を形成することにより、基板
全体が絶縁部材と反対側に反るので、接着材の熱収縮に
よって発生する基板の反りを相殺し、全体として基板が
反るのを防止できるという効果がある。According to a seventh aspect of the present invention, in the fourth aspect of the present invention, the protruding portion is formed by punching out the surface of the substrate opposite to the insulating member to form a recess, thereby forming the recess on the insulating member side of the substrate. Since the protrusion is formed by performing the punching process, the processing cost can be reduced as compared with the case where the protrusion is formed by cutting. Also, when the substrate and the insulating member are bonded with an adhesive, the entire substrate warps toward the insulating member due to the heat shrinkage of the adhesive,
The entire board is warped to the opposite side to the insulating member by forming a recess by stamping out, so canceling the warpage of the board caused by heat shrinkage of the adhesive prevents the board from warping as a whole There is an effect that can be.

【０１５６】請求項８の発明は、請求項４の発明におい
て、基板を、孔に連通する連通孔が形成されたベース板
と、連通孔内に取り付けられ先端が絶縁部材側に突出す
る突起部とで構成し、突起部の先端により突台部を構成
したことを特徴とし、ベース板の孔に突起部を挿入し、
突起部の先端を絶縁部材側に突出させることによって突
台部を形成しているので、突台部を切削加工により形成
する場合に比べて、突台部の加工を容易に行えるという
効果がある。According to an eighth aspect of the present invention, in the fourth aspect of the present invention, the base plate is provided with a communication hole communicating with the hole, and a projection is provided in the communication hole and a tip of which projects toward the insulating member. The feature is that the protruding part is configured by the tip of the protruding part, and the protruding part is inserted into the hole of the base plate,
Since the protruding part is formed by projecting the tip of the protruding part toward the insulating member, there is an effect that the protruding part can be easily processed as compared with a case where the protruding part is formed by cutting. .

【０１５７】請求項９の発明は、請求項４の発明におい
て、孔と突台部との間に隙間を設けたことを特徴とし、
基板と絶縁部材とを接着剤で貼り合わせた場合、基板と
絶縁部材との接合面から余分な接着剤がはみ出し、はみ
出した接着剤によってＬＥＤチップの光が遮光された
り、ＬＥＤチップを実装できなくなる虞があるが、はみ
出した接着剤は孔と突台部との間に設けた隙間に溜まる
ので、接着剤が突台部の上面まで這い上がってくること
はなく、はみ出した接着剤によってＬＥＤチップの光が
遮光されたり、ＬＥＤチップを実装できなくなるのを防
止できるという効果がある。According to a ninth aspect, in the fourth aspect, a gap is provided between the hole and the projecting portion.
When the substrate and the insulating member are bonded together with an adhesive, the excess adhesive protrudes from the bonding surface between the substrate and the insulating member, and the protruding adhesive blocks light from the LED chip or prevents the LED chip from being mounted. Although there is a risk, the protruding adhesive collects in the gap provided between the hole and the protruding portion, so that the adhesive does not creep up to the upper surface of the protruding portion, and the LED chip is protruded by the protruding adhesive. There is an effect that it is possible to prevent that light is blocked or that the LED chip cannot be mounted.

【０１５８】請求項１０の発明は、請求項１乃至９の発
明において、基板と絶縁部材との位置決めを行うための
位置決め手段を基板と絶縁部材との接合面に設けたこと
を特徴とし、位置決め手段により基板と絶縁部材との位
置決めを行うことができ、基板と絶縁部材との接合作業
を容易に行えるという効果がある。A tenth aspect of the present invention is the invention according to the first to ninth aspects, wherein positioning means for positioning the substrate and the insulating member is provided on a joint surface between the substrate and the insulating member. By this means, the substrate and the insulating member can be positioned, and there is an effect that the joining operation between the substrate and the insulating member can be easily performed.

【０１５９】請求項１１の発明は、請求項１乃至９の発
明において、基板と絶縁部材との接合面に接合に用いる
接着剤の溜まり部を絶縁部材の孔の周りに設けたことを
特徴とし、基板と絶縁部材とを接着剤で貼り合わせた場
合、基板と絶縁部材との接合面から余分な接着剤がはみ
出し、はみ出した接着剤によってＬＥＤチップの光が遮
光されたり、ＬＥＤチップを実装できなくなる虞がある
が、接合時に余分な接着剤は溜まり部に溜まるため、接
着剤のはみ出しを防止できるという効果がある。また、
基板と絶縁部材との接合面に接着剤が不足している部分
があると、この部分にできる隙間から封止材料が漏れ出
す虞があるが、余分な接着剤を溜める溜まり部が絶縁部
材に設けた孔の周りに設けられ、溜まり部に溜まった余
分な接着剤は孔から露出する基板の部位を囲むようにし
て配置されるので、溜まり部に溜まった接着剤が封止材
料をせき止める堰の役割を果たして、封止材料が漏れ出
すのを防止できるという効果がある。An eleventh aspect of the present invention is characterized in that, in the first to ninth aspects of the present invention, a reservoir for the adhesive used for bonding is provided around the hole of the insulating member on the bonding surface between the substrate and the insulating member. When the substrate and the insulating member are bonded together with an adhesive, the excess adhesive protrudes from the bonding surface between the substrate and the insulating member, and the protruding adhesive blocks light from the LED chip or mounts the LED chip. Although there is a possibility that the adhesive will disappear, the excess adhesive is accumulated in the accumulation part at the time of joining, so that there is an effect that the adhesive can be prevented from protruding. Also,
If there is a portion where the adhesive is insufficient at the joint surface between the substrate and the insulating member, there is a possibility that the sealing material leaks out of a gap formed in this portion, but a pool portion for storing excess adhesive is formed on the insulating member. The extra adhesive provided around the hole provided and accumulated in the pool portion is disposed so as to surround the portion of the substrate exposed from the hole, so that the adhesive accumulated in the pool portion serves as a weir for damping the sealing material. To prevent leakage of the sealing material.

【０１６０】請求項１２の発明は、請求項１の発明にお
いて、上記給電部は導電性材料により形成された基板を
含み、基板とＬＥＤチップの電極とを電気的に接続した
ことを特徴とし、基板そのものを給電部としており、Ｌ
ＥＤチップの一方の電極を基板に接続するとともに、Ｌ
ＥＤチップの他方の電極を配線部に接続することによっ
て、ＬＥＤチップに給電することができるから、絶縁部
材の表面に形成する配線部が１回路分で済むという利点
がある。また、ＬＥＤチップに給電するための回路の一
部を基板が担っているので、回路を基板側に容易に引き
出すことができるという効果がある。According to a twelfth aspect of the present invention, in the first aspect, the power supply section includes a substrate formed of a conductive material, and the substrate and the electrode of the LED chip are electrically connected. The substrate itself is used as the power supply unit, and L
While connecting one electrode of the ED chip to the substrate,
By connecting the other electrode of the ED chip to the wiring portion, power can be supplied to the LED chip. Therefore, there is an advantage that only one wiring portion is formed on the surface of the insulating member. In addition, since a part of the circuit for supplying power to the LED chip is carried by the substrate, there is an effect that the circuit can be easily drawn to the substrate side.

【０１６１】請求項１３の発明は、請求項１２の発明に
おいて、上記基板に、互いに電気的に絶縁された複数の
領域を設けたことを特徴としている。ところで、一枚の
基板に複数のＬＥＤチップが実装される場合、一枚の基
板が互いに電気的に絶縁された複数の領域に分割されて
いないと、全てのＬＥＤチップが並列に接続されること
になる。ここで、ＬＥＤチップは個体ごとに駆動電圧が
若干異なるため、複数のＬＥＤチップが並列に接続され
ると、駆動電圧が最も低いＬＥＤチップに多大な電流が
流れて、ＬＥＤチップが破損する虞がある。そこで、複
数のＬＥＤチップに流れる電流を均等にするために、個
々のＬＥＤチップ毎に電流制限用の抵抗を直列接続する
方法が考えられるが、ＬＥＤチップの数だけ電流制限用
の抵抗が必要になり、各抵抗で消費される電力ロスが増
大する。それに対して本発明では、基板に、互いに電気
的に絶縁された複数の領域を設けており、各領域にそれ
ぞれＬＥＤチップを実装し、各領域に実装されたＬＥＤ
チップを直列に接続すれば、個々のＬＥＤチップに流れ
る電流値を略一定にすることができ、且つ、直列接続さ
れた複数のＬＥＤチップに対して電流制限用の抵抗を１
個接続すれば、各ＬＥＤチップに流れる電流を制限でき
るから、電流制限用の抵抗で消費される電力ロスを小さ
くできるという効果がある。According to a thirteenth aspect, in the twelfth aspect, the substrate is provided with a plurality of regions that are electrically insulated from each other. By the way, when a plurality of LED chips are mounted on one substrate, if one substrate is not divided into a plurality of regions electrically insulated from each other, all the LED chips may be connected in parallel. become. Here, since the driving voltage of each LED chip is slightly different for each individual, when a plurality of LED chips are connected in parallel, a large amount of current flows to the LED chip having the lowest driving voltage, and the LED chip may be damaged. is there. Therefore, in order to equalize the currents flowing through a plurality of LED chips, a method of connecting a current limiting resistor in series for each LED chip is conceivable, but a current limiting resistor is required for the number of LED chips. Therefore, the power loss consumed by each resistor increases. On the other hand, in the present invention, a plurality of regions that are electrically insulated from each other are provided on a substrate, and an LED chip is mounted in each region, and an LED mounted in each region is provided.
If the chips are connected in series, the value of the current flowing through each LED chip can be made substantially constant, and a current limiting resistor is set to 1 for a plurality of LED chips connected in series.
By connecting them individually, the current flowing through each LED chip can be limited, so that the power loss consumed by the current limiting resistor can be reduced.

【０１６２】請求項１４の発明は、請求項１の発明にお
いて、封止材料の表面を、ＬＥＤチップの発光を所望の
方向に配光するレンズ形状としたことを特徴とし、封止
材料の表面をレンズ形状としたことにより、別途レンズ
を設けることなく、ＬＥＤチップの発光を所望の方向に
配光することができるという効果がある。According to a fourteenth aspect, in the first aspect, the surface of the sealing material has a lens shape for distributing the light emitted from the LED chip in a desired direction. Has an effect that light emission of the LED chip can be distributed in a desired direction without providing a separate lens.

【０１６３】請求項１５の発明は、請求項１の発明にお
いて、孔の側壁にＬＥＤチップの発光を反射して所望の
方向に配光する反射部を設けたことを特徴とし、反射部
によってＬＥＤチップの光を反射して所望の方向へ配光
することにより、光の取り出し効率が向上するという効
果がある。According to a fifteenth aspect of the present invention, in the first aspect of the present invention, a reflecting portion for reflecting light emitted from the LED chip and distributing the light in a desired direction is provided on a side wall of the hole. By reflecting the light from the chip and distributing the light in a desired direction, there is an effect that the light extraction efficiency is improved.

【０１６４】請求項１６の発明は、請求項１５の発明に
おいて、上記反射部を配線部で兼用したことを特徴と
し、配線部が反射部を兼用することにより、絶縁部材の
表面に形成される配線部及び反射部のパターンを簡素化
できるという効果がある。A sixteenth invention is characterized in that, in the fifteenth invention, the reflection part is also used as a wiring part, and the wiring part is formed on the surface of the insulating member by also using the reflection part. There is an effect that the patterns of the wiring portion and the reflection portion can be simplified.

【０１６５】請求項１７の発明は、請求項１５の発明に
おいて、上記接続部材は金属線からなり、金属線の延び
る方向に配線部を配設したことを特徴とし、ＬＥＤチッ
プからの光は金属線によって遮光されるが、金属線の影
となる部分に配線部を配置しているので、配線部以外の
部位に形成された反射部によって、ＬＥＤチップからの
光を所望の方向に配光することができるという効果があ
る。A seventeenth aspect of the present invention is the invention according to the fifteenth aspect, wherein the connection member is formed of a metal wire, and a wiring portion is provided in a direction in which the metal wire extends. Although the light is shielded by the line, since the wiring portion is arranged in a portion that becomes a shadow of the metal wire, the light from the LED chip is distributed in a desired direction by the reflection portion formed in a portion other than the wiring portion. There is an effect that can be.

【０１６６】請求項１８の発明は、請求項１の発明にお
いて、封止材料は、ＬＥＤチップから放射された光の少
なくとも一部を所定の光色に変換する光色変換機能を有
することを特徴とし、封止材料によって光色が変換され
た光と、ＬＥＤチップからの光とを混色することによっ
て、所望の光色の光を得ることができるという効果があ
る。The invention according to claim 18 is characterized in that, in the invention according to claim 1, the sealing material has a light color conversion function of converting at least a part of light emitted from the LED chip into a predetermined light color. By mixing the light whose light color has been converted by the sealing material and the light from the LED chip, there is an effect that light of a desired light color can be obtained.

【０１６７】請求項１９の発明は、請求項１８の発明に
おいて、封止材料の表面は、絶縁部材における基板と反
対側の面よりも基板側に位置し、孔の周壁にＬＥＤチッ
プの発光を反射して所望の方向に配光する反射部を設け
たことを特徴とし、ＬＥＤチップからの光は封止材料を
通過することによって分散され、完全拡散配光となって
いるので、配光制御しやすくなっており、反射部によっ
て所望の方向に配光することができるという効果があ
る。According to a nineteenth aspect, in the eighteenth aspect, the surface of the sealing material is located closer to the substrate than the surface of the insulating member opposite to the substrate, and the peripheral wall of the hole emits light from the LED chip. It is characterized by providing a reflector that reflects and distributes light in a desired direction. Light from the LED chip is dispersed by passing through the encapsulating material, and is a completely diffused light distribution. This is advantageous in that light can be distributed in a desired direction by the reflection section.

【０１６８】請求項２０の発明は、請求項１の発明にお
いて、配線部の一部を基板側に向かって延伸し、この延
伸された部分で外部接続端子を構成することを特徴と
し、配線部の一部を基板側に向かって延伸し、この延伸
された部位を外部接続端子としているので、基板側から
配線部への給電を容易に行えるという効果がある。な
お、配線部の一部を基板側に向かって延伸させる形態と
しては種々考えられるが、例えば絶縁部材の端部に沿っ
て配線部を基板側に延伸したり、絶縁部材にスルーホー
ルを形成し、このスルーホール内に導電性材料を充填す
ることによって配線部を基板側に延伸することが考えら
れる。また基板側に向かって延伸する配線部の長さも必
要に応じて決定され、絶縁部材の途中まで又は基板側の
面まで延伸しても良いし、基板側の面に一部を回り込ま
せるようにしても良いし、また基板の向こう側まで突出
するようにしても良い。According to a twentieth aspect, in the first aspect, a part of the wiring portion is extended toward the substrate, and the extended portion forms an external connection terminal. Is extended toward the substrate side and the extended portion is used as an external connection terminal, so that there is an effect that power can be easily supplied from the substrate side to the wiring portion. Note that various forms are possible for extending a part of the wiring portion toward the substrate side. It is conceivable that the wiring portion extends toward the substrate by filling the through hole with a conductive material. In addition, the length of the wiring portion extending toward the substrate side is also determined as necessary, and may be extended to the middle of the insulating member or the surface on the substrate side, or may be partially wrapped around the surface on the substrate side. Or it may be made to protrude to the other side of the substrate.

【０１６９】請求項２１の発明は、請求項２０の発明に
おいて、上記配線部の一部が、絶縁部材における基板と
の対向面まで延伸されたことを特徴とし、配線部の一部
を基板との対向面まで延伸させているので、この延伸さ
れた部分に対して容易に給電することができるという効
果がある。例えば、基板と嵌合する穴の形成された器具
本体にこの光源装置を実装する場合、配線部の一部を絶
縁部材における基板との対向面まで延伸しているので、
器具本体の穴に基板部分を嵌合すれば、器具本体に形成
された配線部と光源装置の配線部との電気的接続を容易
に行うことができ、さらに基板部分を穴内に嵌め込んで
器具本体と接触させるようにすれば、放熱性が向上す
る。The invention of claim 21 is characterized in that, in the invention of claim 20, a part of the wiring part is extended to a surface of the insulating member facing the substrate, and a part of the wiring part is connected to the substrate. Is extended to the opposing surface, so that it is possible to easily supply power to the extended portion. For example, when the light source device is mounted on a fixture body having a hole to be fitted with a substrate, a part of the wiring portion extends to a surface of the insulating member facing the substrate.
If the board portion is fitted into the hole of the instrument body, electrical connection between the wiring portion formed on the instrument body and the wire portion of the light source device can be easily performed. If it is brought into contact with the main body, the heat radiation is improved.

【０１７０】請求項２２の発明は、請求項２０又は２１
の発明において、絶縁部材の一部を基板側に向かって延
伸し、この延伸された部分の先端を、基板における絶縁
部材と反対側の面と略面一にしたことを特徴とし、絶縁
部材の基板側に延伸された部位に器具本体の表面に載置
して光源装置を器具本体に実装する際に、絶縁部材の延
伸された部位が基板における絶縁部材と反対側の面と略
面一になっているので、絶縁部材を器具本体の表面に載
置するだけで、基板が器具本体の表面に接触するから、
ＬＥＤチップの発熱が基板を介して器具本体に放出さ
れ、冷却効果が向上するという効果がある。しかも、配
線部の一部を基板側に延伸させて外部接続端子としてい
るので、外部接続端子と器具本体の表面に形成された配
線部との電気的接続を容易に行えるという効果がある。
さらに、絶縁部材の基板側に延伸された部位の先端面に
外部接続端子を形成すれば放熱性を向上させた表面実装
型の光源装置を実現できる。The invention of claim 22 is the invention of claim 20 or 21
In the invention of the above, characterized in that a part of the insulating member is extended toward the substrate side, the tip of the extended portion is substantially flush with the surface of the substrate opposite to the insulating member, When the light source device is mounted on the fixture body by placing the light source device on the fixture body at the portion extended toward the substrate, the extended portion of the insulating member is substantially flush with the surface of the substrate opposite to the insulating member. Because, just by placing the insulating member on the surface of the appliance body, the substrate contacts the surface of the appliance body,
The heat generated by the LED chips is released to the main body of the device via the substrate, and the cooling effect is improved. Moreover, since a part of the wiring portion is extended to the substrate side to be an external connection terminal, there is an effect that electrical connection between the external connection terminal and the wiring portion formed on the surface of the appliance body can be easily performed.
Furthermore, if an external connection terminal is formed on the distal end surface of a portion of the insulating member that extends toward the substrate, a surface-mounted light source device with improved heat dissipation can be realized.

【０１７１】請求項２３の発明は、請求項１の発明にお
いて、絶縁部材とＬＥＤチップと配線部と封止部材とが
基板の両面に設けられたことを特徴とし、基板の両面か
らＬＥＤチップの光を放射させることができ、且つ、基
板の両面に同じ部品が配設されているので、基板の反り
を抑制することができるという効果がある。A twenty-third aspect of the present invention is characterized in that, in the first aspect of the present invention, the insulating member, the LED chip, the wiring portion, and the sealing member are provided on both sides of the substrate. Since light can be emitted and the same components are provided on both surfaces of the substrate, there is an effect that the warpage of the substrate can be suppressed.

【０１７２】請求項２４の発明は、絶縁部材の一面に絶
縁部材を貫通する孔を形成すると共に、絶縁部材の一面
に配線部を形成した後、絶縁部材の他面に基板を接合
し、孔から露出する基板の部位に対向させ且つ熱結合さ
せてＬＥＤチップを配置し、配線部とＬＥＤチップの電
極とを電気的に接続した後、孔内に透光性を有する封止
材料を充填して、ＬＥＤチップ及びＬＥＤチップと配線
部との電気的接続部の全体を封止することを特徴とし、
絶縁部材と基板とを接合し、絶縁部材に設けた孔から露
出する基板の部位に対向させ且つ熱結合させてＬＥＤチ
ップを配置しているので、従来の光源装置のように絶縁
部材に切削加工を施してＬＥＤチップの実装部位を形成
する場合に比べて、加工費用を低減でき、且つＬＥＤチ
ップの実装部位に切削きずが発生してＬＥＤチップを実
装しにくくなるのを防止でき、さらにＬＥＤチップを基
板に熱結合させているので、ＬＥＤチップの発熱を基板
を介して放出することができ、またＬＥＤチップと基板
の配線部とを金属線により電気的に接続した場合は、封
止材料によってＬＥＤチップ及び金属線の全体を封止し
ているので、樹脂の界面で発生する応力によって金属線
が断線する虞はなく、機械的強度が向上するという効果
がある。According to a twenty-fourth aspect of the present invention, a hole penetrating the insulating member is formed on one surface of the insulating member, and a wiring portion is formed on one surface of the insulating member. The LED chip is arranged by facing and thermally bonding to the portion of the substrate exposed from the substrate, and after electrically connecting the wiring portion and the electrode of the LED chip, the hole is filled with a translucent sealing material. Characterized in that the entirety of the LED chip and the electrical connection between the LED chip and the wiring portion is sealed,
The insulating member and the substrate are joined together, and the LED chip is arranged so as to face and thermally bond the portion of the substrate exposed from the hole provided in the insulating member. The processing cost can be reduced as compared with the case where the LED chip mounting portion is formed by applying the LED chip, and it is possible to prevent a cutting flaw from being generated in the LED chip mounting portion and making it difficult to mount the LED chip. Since the LED chip is thermally coupled to the substrate, the heat generated by the LED chip can be released through the substrate, and when the LED chip and the wiring portion of the substrate are electrically connected by a metal wire, the sealing material is used. Since the entire LED chip and the metal wire are sealed, there is no danger that the metal wire will be broken by the stress generated at the interface between the resin, and there is an effect that the mechanical strength is improved.

【０１７３】請求項２５の発明は、基板と、基板に対向
する面に孔が貫通して形成された絶縁部材とをインサー
ト成形し、絶縁部材における基板と反対側の面に配線部
を形成した後、孔から露出する基板の部位に対向させ且
つ熱結合させてＬＥＤチップを配置し、配線部とＬＥＤ
チップの電極とを電気的に接続した後、孔内に透光性を
有する封止材料を充填して、ＬＥＤチップ及びＬＥＤチ
ップと配線部との電気的接続部の全体を封止することを
特徴とし、絶縁部材と基板とをインサート成形し、絶縁
部材に設けた孔から露出する基板の部位に対向させ且つ
熱結合させてＬＥＤチップを配置しているので、従来の
光源装置のように絶縁部材に切削加工を施してＬＥＤチ
ップの実装部位を形成する場合に比べて、加工費用を低
減でき、且つＬＥＤチップの実装部位に切削きずが発生
してＬＥＤチップを実装しにくくなるのを防止でき、さ
らにＬＥＤチップを基板に熱結合しているので、ＬＥＤ
チップの発熱を基板を介して放出することができ、また
ＬＥＤチップと基板の配線部とを金属線により電気的に
接続した場合は、封止材料によってＬＥＤチップ及び金
属線の全体を封止しているので、樹脂の界面で発生する
応力によって金属線が断線する虞はなく、機械的強度が
向上するという効果がある。According to a twenty-fifth aspect of the present invention, a substrate and an insulating member having a hole formed through a surface facing the substrate are insert-molded, and a wiring portion is formed on the surface of the insulating member opposite to the substrate. After that, the LED chip is arranged by facing and thermally bonding the portion of the substrate exposed from the hole,
After electrically connecting the electrodes of the chip, the hole is filled with a light-transmitting sealing material to seal the entire LED chip and the entire electrical connection between the LED chip and the wiring portion. The feature is that the insulating member and the substrate are insert-molded, and the LED chip is arranged facing and thermally bonded to the portion of the substrate exposed from the hole provided in the insulating member, so that the insulating member is insulated like a conventional light source device. The processing cost can be reduced compared to the case where a cutting process is performed on a member to form a mounting portion of an LED chip, and it is possible to prevent a cutting flaw from being generated in a mounting portion of the LED chip and making it difficult to mount the LED chip. Since the LED chip is thermally bonded to the substrate,
The heat of the chip can be released via the substrate, and when the LED chip and the wiring portion of the substrate are electrically connected by a metal wire, the entire LED chip and the metal wire are sealed with a sealing material. Therefore, there is no possibility that the metal wire is broken by the stress generated at the interface of the resin, and there is an effect that the mechanical strength is improved.

【０１７４】請求項２６の発明は、基板と配線部を構成
する導電板とを所定の間隔をおいてインサート成形する
ことにより絶縁部材を形成し、絶縁部材を貫通して設け
られた孔から露出する基板の部位に対向させ且つ熱結合
させてＬＥＤチップを配置した後、配線部とＬＥＤチッ
プの電極とを電気的に接続し、孔内に透光性を有する封
止材料を充填して、ＬＥＤチップ及びＬＥＤチップと配
線部との電気的接続部の全体を封止することを特徴と
し、絶縁部材と導電板とをインサート成形することによ
り絶縁部材を形成し、絶縁部材に設けた孔から露出する
基板の部位に対向させ且つ熱結合させてＬＥＤチップを
配置しているので、従来の光源装置のように絶縁部材に
切削加工を施してＬＥＤチップの実装部位を形成する場
合に比べて、加工費用を低減でき、且つＬＥＤチップの
実装部位に切削きずが発生してＬＥＤチップを実装しに
くくなるのを防止でき、さらにＬＥＤチップを基板に熱
結合させているので、ＬＥＤチップの発熱を基板を介し
て放出することができ、またＬＥＤチップと配線部とを
金属線により電気的に接続した場合は、封止材料によっ
てＬＥＤチップ及び金属線の全体を封止しているので、
樹脂の界面で発生する応力によって金属線が断線する虞
はなく、機械的強度が向上するという効果がある。According to a twenty-sixth aspect of the present invention, an insulating member is formed by insert-molding a substrate and a conductive plate constituting a wiring portion at a predetermined interval, and the insulating member is formed through a hole provided through the insulating member. After arranging the LED chip by facing and thermally bonding to the portion of the substrate to be connected, the wiring portion and the electrode of the LED chip are electrically connected, and the hole is filled with a translucent sealing material, The entirety of the LED chip and the electrical connection between the LED chip and the wiring portion is sealed, and the insulating member is formed by insert molding the insulating member and the conductive plate. Since the LED chip is arranged facing and thermally bonded to the exposed portion of the substrate, compared with a case where the insulating member is cut and formed as in the conventional light source device to form the mounting portion of the LED chip, Processing costs It is possible to reduce the occurrence of cutting flaws in the mounting area of the LED chip and to make it difficult to mount the LED chip. Furthermore, since the LED chip is thermally coupled to the substrate, the heat generated by the LED chip is transmitted through the substrate. When the LED chip and the wiring portion are electrically connected by a metal wire, the entirety of the LED chip and the metal wire is sealed with a sealing material.
There is no danger that the metal wire will be broken by the stress generated at the resin interface, and there is an effect that the mechanical strength is improved.

【０１７５】請求項２７の発明は、基板と絶縁部材とを
接合し、基板を貫通して設けられ、絶縁部材を貫通する
孔に連通する連通孔に、ＬＥＤチップが実装された突起
部を挿入して、ＬＥＤチップを絶縁部材の孔内に配置し
た後、配線部とＬＥＤチップの電極とを金属線を介して
電気的に接続し、孔内に透光性を有する封止材料を充填
して、ＬＥＤチップ及び金属線の全体を封止することを
特徴とし、基板と絶縁部材とを接合し、絶縁部材に設け
た孔から露出する基板の部位にＬＥＤチップを実装して
いるので、従来の光源装置のように絶縁部材に切削加工
を施してＬＥＤチップの実装部位を形成する場合に比べ
て、加工費用を低減でき、且つＬＥＤチップの実装部位
に切削きずが発生してＬＥＤチップを実装しにくくなる
のを防止でき、さらにＬＥＤチップを直接基板に実装し
ているので、ＬＥＤチップの発熱を基板を介して放出す
ることができ、また封止材料によってＬＥＤチップ及び
金属線の全体を封止しているので、樹脂の界面で発生す
る応力によって金属線が断線する虞はなく、機械的強度
が向上するという効果がある。しかも、基板に設けた孔
内に突起部を挿入することにより突台部を形成している
ので、基板に切削加工を施して突台部を形成する場合に
比べて、突台部の加工費用を低減できるという効果があ
る。According to a twenty-seventh aspect of the present invention, a protrusion on which an LED chip is mounted is inserted into a communication hole provided by joining a substrate and an insulating member, penetrating the substrate, and communicating with a hole passing through the insulating member. Then, after disposing the LED chip in the hole of the insulating member, the wiring portion and the electrode of the LED chip are electrically connected via a metal wire, and the hole is filled with a translucent sealing material. It is characterized by sealing the entire LED chip and the metal wire, joining the substrate and the insulating member, and mounting the LED chip on the part of the substrate exposed from the hole provided in the insulating member. The processing cost can be reduced compared with the case where the cutting process is performed on the insulating member to form the mounting portion of the LED chip as in the light source device of the above, and the cutting chip is generated on the mounting portion of the LED chip to mount the LED chip. Can be prevented from becoming difficult Since the LED chip is directly mounted on the substrate, the heat of the LED chip can be released through the substrate, and the entire LED chip and the metal wires are sealed with a sealing material. There is no danger that the metal wire will be broken by the stress generated at the interface, and there is an effect that the mechanical strength is improved. Moreover, since the projecting portion is formed by inserting the projecting portion into the hole provided in the substrate, the processing cost of the projecting portion is lower than when forming the projecting portion by cutting the substrate. This has the effect of reducing noise.

【図面の簡単な説明】[Brief description of the drawings]

【図１】実施形態１の光源装置を示し、（ａ）は断面
図、（ｂ）は平面図である。FIGS. 1A and 1B show a light source device according to a first embodiment, wherein FIG. 1A is a cross-sectional view and FIG.

【図２】実施形態２の光源装置を示す断面図である。FIG. 2 is a cross-sectional view illustrating a light source device according to a second embodiment.

【図３】（ａ）（ｂ）は実施形態３の光源装置を示す断
面図である。FIGS. 3A and 3B are cross-sectional views illustrating a light source device according to a third embodiment.

【図４】（ａ）（ｂ）は実施形態４の光源装置を示す断
面図である。FIGS. 4A and 4B are cross-sectional views illustrating a light source device according to a fourth embodiment.

【図５】実施形態５の光源装置を示す断面図である。FIG. 5 is a cross-sectional view illustrating a light source device according to a fifth embodiment.

【図６】実施形態６の光源装置を示す断面図である。FIG. 6 is a cross-sectional view illustrating a light source device according to a sixth embodiment.

【図７】実施形態７の光源装置を示す断面図である。FIG. 7 is a cross-sectional view illustrating a light source device according to a seventh embodiment.

【図８】実施形態８の光源装置を示す断面図である。FIG. 8 is a cross-sectional view illustrating a light source device according to an eighth embodiment.

【図９】実施形態９の光源装置を示す断面図である。FIG. 9 is a cross-sectional view illustrating a light source device according to a ninth embodiment.

【図１０】実施形態１０の光源装置を示す断面図であ
る。FIG. 10 is a cross-sectional view illustrating a light source device according to a tenth embodiment.

【図１１】実施形態１１の光源装置を示す断面図であ
る。FIG. 11 is a cross-sectional view illustrating a light source device according to an eleventh embodiment.

【図１２】実施形態１２の光源装置を示し、（ａ）は断
面図、（ｂ）は平面図である。12A and 12B illustrate a light source device according to a twelfth embodiment, where FIG. 12A is a cross-sectional view and FIG. 12B is a plan view.

【図１３】実施形態１３の光源装置を示し、（ａ）は断
面図、（ｂ）は平面図である。13A and 13B show a light source device according to a thirteenth embodiment, wherein FIG. 13A is a cross-sectional view and FIG. 13B is a plan view.

【図１４】実施形態１４の光源装置を示す断面図であ
る。FIG. 14 is a sectional view showing a light source device according to a fourteenth embodiment.

【図１５】実施形態１５の光源装置を示す断面図であ
る。FIG. 15 is a sectional view showing a light source device according to a fifteenth embodiment.

【図１６】実施形態１６の光源装置を示す断面図であ
る。FIG. 16 is a sectional view showing a light source device according to a sixteenth embodiment.

【図１７】実施形態１７の光源装置を示す断面図であ
る。FIG. 17 is a sectional view showing a light source device according to a seventeenth embodiment.

【図１８】実施形態１８の光源装置を示す断面図であ
る。FIG. 18 is a sectional view showing a light source device according to an eighteenth embodiment.

【図１９】実施形態１９の光源装置を示す断面図であ
る。FIG. 19 is a sectional view showing a light source device according to a nineteenth embodiment.

【図２０】実施形態２０の光源装置を示す断面図であ
る。FIG. 20 is a cross-sectional view illustrating a light source device according to a twentieth embodiment.

【図２１】（ａ）〜（ｅ）は実施形態２１の光源装置の
各製造工程を示す断面図である。21 (a) to (e) are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 21.

【図２２】（ａ）〜（ｄ）は実施形態２２の光源装置の
各製造工程を示す断面図である。FIGS. 22A to 22D are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 22. FIGS.

【図２３】（ａ）〜（ｅ）は実施形態２３の光源装置の
各製造工程を示す断面図である。FIGS. 23A to 23E are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 23. FIGS.

【図２４】（ａ）〜（ｆ）は実施形態２４の光源装置の
各製造工程を示す断面図である。FIGS. 24A to 24F are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 24. FIGS.

【図２５】従来の光源装置の断面図である。FIG. 25 is a sectional view of a conventional light source device.

【図２６】従来の別の光源装置の断面図である。FIG. 26 is a sectional view of another conventional light source device.

【符号の説明】[Explanation of symbols]

１ 光源装置 ２ ＬＥＤチップ ３ 基板 ４ 絶縁部材 ４ａ 張出部 ６ 貫通孔 ８ 配線パターン ９ ボンディングワイヤ １０ 封止樹脂 REFERENCE SIGNS LIST 1 light source device 2 LED chip 3 substrate 4 insulating member 4 a overhang 6 through hole 8 wiring pattern 9 bonding wire 10 sealing resin

【手続補正書】[Procedure amendment]

【提出日】平成１３年９月１７日（２００１．９．１
７）[Submission date] September 17, 2001 (2001.9.1
7)

【手続補正１】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０００２[Correction target item name] 0002

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０００２】[0002]

【従来の技術】この種の光源装置としては、図２４に示
すような砲弾型の発光ダイオードを用いたものが従来よ
り提供されており、発光ダイオードを単数で使用した
り、複数個の発光ダイオードを基板３０上にアレイ状に
配置して使用するものがあった。2. Description of the Related Art As a light source device of this type, a light source device using a cannon-shaped light emitting diode as shown in FIG. 24 has been conventionally provided, and a single light emitting diode or a plurality of light emitting diodes can be used. Were used in an array on the substrate 30.

【手続補正２】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００１１[Correction target item name] 0011

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００１１】そこで、放熱特性を更に改善するために、
図２５に示すようにＬＥＤチップ２を基板３４に直接ダ
イボンドした光源装置も提案されている。基板３４は例
えばアルミニウムの薄板からなり、基板３４にプレス加
工を施すことによって凹所３４ａを形成し、基板３４の
表面に絶縁体薄膜３５を形成した後、凹所３４ａの底面
に形成された絶縁体薄膜３５上にＬＥＤチップ２をダイ
ボンドしている。そして、基板３４の表面に絶縁体膜層
３５を介して形成された配線パターン３６とＬＥＤチッ
プ２表面の電極との間をボンディングワイヤ９を介して
電気的に接続し、凹所３４ａ内に透光性を有する封止樹
脂３７を充填して形成される。Therefore, in order to further improve the heat radiation characteristics,
A light source device in which the LED chip 2 is directly die-bonded to the substrate 34 as shown in FIG. 25 has also been proposed. The substrate 34 is made of, for example, a thin aluminum plate. The recess 34 a is formed by pressing the substrate 34, an insulating thin film 35 is formed on the surface of the substrate 34, and the insulating film formed on the bottom surface of the recess 34 a is formed. The LED chip 2 is die-bonded on the body thin film 35. Then, the wiring pattern 36 formed on the surface of the substrate 34 via the insulator film layer 35 and the electrode on the surface of the LED chip 2 are electrically connected via the bonding wire 9, and the wiring is formed in the recess 34 a. It is formed by filling a sealing resin 37 having optical properties.

【手続補正３】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００１２[Correction target item name] 0012

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００１２】この光源装置では、ＬＥＤチップ２の発熱
は、ＬＥＤチップ２からダイボンディングペースト７→
絶縁体膜層３５→基板３４の経路で放熱され、基板３４
に伝わった熱は基板３４全体に拡散していくため、砲弾
型の発光ダイオードに比べて放熱経路が短く、放熱性が
非常に高くなっている。しかしながら、この放熱経路に
おいても、放熱性を阻害する構成要素としてダイボンデ
ィングペースト７と絶縁体膜層３５とが存在する。ダイ
ボンディングペースト７は樹脂製であり、ペースト自体
の熱伝導係数は小さいものの、ペーストの厚みは５μｍ
以下と薄いため、ダイボンディングペースト７が放熱性
に与える影響は小さいものと考えられる。一方、絶縁体
膜層３５は樹脂やセラッミックスフィラーを分散させた
樹脂などから形成されており、金属に比較して絶縁体膜
層３５自体の熱伝導係数が小さく、また絶縁体膜層３５
の厚みも３００μｍ程度と厚くなっているため、放熱性
に与える影響が大きくなっている。而して、図２５に示
す構造の光源装置では、砲弾型ＬＥＤを用いた光源装置
に比べて、ＬＥＤチップ２からの放熱性は高くなってい
るものの、放熱経路に絶縁体膜層３５が存在しているた
めに、十分な放熱性が得られなかった。In this light source device, the heat generated by the LED chip 2 is transferred from the LED chip 2 to the die bonding paste 7 →
Heat is radiated along the path from the insulator film layer 35 to the substrate 34,
Since the heat transmitted to the substrate is diffused throughout the substrate 34, the heat radiation path is shorter than that of the shell-type light emitting diode, and the heat radiation is extremely high. However, also in this heat dissipation path, the die bonding paste 7 and the insulator film layer 35 exist as components that inhibit heat dissipation. The die bonding paste 7 is made of resin, and although the heat conductivity of the paste itself is small, the thickness of the paste is 5 μm.
It is considered that the influence of the die bonding paste 7 on the heat radiation is small because it is as thin as the following. On the other hand, the insulator film layer 35 is formed of a resin, a resin in which ceramic filler is dispersed, or the like.
Is also as thick as about 300 μm, so that the effect on heat dissipation is increased. Thus, in the light source device having the structure shown in FIG. 25 , although the heat radiation from the LED chip 2 is higher than that of the light source device using the cannonball type LED, the insulator film layer 35 exists in the heat radiation path. As a result, sufficient heat dissipation was not obtained.

【手続補正４】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００１４[Correction target item name] 0014

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００１４】また、図２５に示す光源装置では、絶縁体
膜層３５の上面に配線パターン３６が形成されており、
ボンディングワイヤ９の一端は配線パターン３６に接続
されているから、ＬＥＤチップ２を封止樹脂３７で封止
したとしても、ボンディングワイヤ９の一部が封止樹脂
３７から外側に露出することになり、機械的衝撃に対し
てボンディングワイヤ９の強度が著しく低下するという
問題がある。そこで、封止樹脂３７から外側に露出して
いるボンディングワイヤ９の部位を保護するために、封
止樹脂３７から露出しているボンディングワイヤ９の部
位を別途樹脂封止することも考えられるが、同じ樹脂を
用いて樹脂封止したとしても、２回に分けて樹脂封止を
行った場合は２つの樹脂の界面部分に応力が残存するた
め、点灯時に発生するＬＥＤチップ２の発熱によって応
力が増大し、界面部分でボンディングワイヤ９が断線す
る虞もある。特に青色発光のＬＥＤチップ２を用いて白
色発光を得るために、封止樹脂３７に蛍光体などの粉体
を分散させている場合は、封止樹脂３７の上から樹脂封
止された封止樹脂との間に熱膨張率の差が生じ、界面部
分でボンディングワイヤ９が断線する可能性が増大する
という問題もあった。In the light source device shown in FIG. 25 , a wiring pattern 36 is formed on the upper surface of the insulator film layer 35.
Since one end of the bonding wire 9 is connected to the wiring pattern 36, even if the LED chip 2 is sealed with the sealing resin 37, a part of the bonding wire 9 is exposed to the outside from the sealing resin 37. In addition, there is a problem that the strength of the bonding wire 9 is significantly reduced due to mechanical shock. Therefore, in order to protect the portion of the bonding wire 9 exposed to the outside from the sealing resin 37, the portion of the bonding wire 9 exposed from the sealing resin 37 may be separately resin-sealed. Even if the same resin is used to seal the resin, if the resin is sealed twice, the stress remains at the interface between the two resins. The bonding wire 9 may be broken at the interface. In particular, when powder such as a phosphor is dispersed in the sealing resin 37 in order to obtain white light emission using the blue light emitting LED chip 2, the sealing resin 37 is sealed from above the sealing resin 37. There is also a problem that a difference in the coefficient of thermal expansion is generated between the resin and the resin, and the possibility that the bonding wire 9 is broken at the interface is increased.

【手続補正５】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００９９[Correction target item name]

【補正方法】削除[Correction method] Deleted

【手続補正６】[Procedure amendment 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１００[Correction target item name] 0100

【補正方法】削除[Correction method] Deleted

【手続補正７】[Procedure amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０１[Correction target item name] 0101

【補正方法】削除[Correction method] Deleted

【手続補正８】[Procedure amendment 8]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０２[Correction target item name] 0102

【補正方法】削除[Correction method] Deleted

【手続補正９】[Procedure amendment 9]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０３[Correction target item name] 0103

【補正方法】削除[Correction method] Deleted

【手続補正１０】[Procedure amendment 10]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０４[Correction target item name] 0104

【補正方法】削除[Correction method] Deleted

【手続補正１１】[Procedure amendment 11]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０５[Correction target item name] 0105

【補正方法】削除[Correction method] Deleted

【手続補正１２】[Procedure amendment 12]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０６[Correction target item name] 0106

【補正方法】削除[Correction method] Deleted

【手続補正１３】[Procedure amendment 13]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０７[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１０７】（実施形態１５）本発明の実施形態１５を
図１５を参照して説明する。本実施形態の光源装置１で
は、実施形態１４の光源装置において凹所５’の側面形
状を２段構造としている。すな わち、凹所５’の内側
面には、凹所５’の底面側から開口側に行くにしたがっ
て内径が徐々に大きくなり、約４５度の角度で傾斜する
ようなテーパ面４ｂが形成され、テーパ面４ｂの先端部
から開口部にかけて、ＬＥＤチップ２からの光を所望の
方向に反射して集光できるような断面形状を有する反射
面４ｃが形成されている。また、絶縁部材４における基
板３と反対側の面には、一対の配線パターン８が突台部
１１を通る同一直線上に形成されており、反射面４ｃに
おける配線パターン８以外の部位には、例えば銀などの
高反射率の材料から形成された反射膜１８が形成されて
いる。そして、凹所５’内にはテーパ面４ｂの先端部に
達するまで封止樹脂１０’が注入されている。尚、凹所
５’の側面形状以外の構成は実施形態１４と同様である
ので、同一の構成要素には同一の符号を付して、その説
明は省略する。[0107] The (Embodiment 15) Embodiment 15 of the present invention
This will be described with reference to FIG . In the light source device 1 according to the present embodiment, the side surface shape of the recess 5 ′ in the light source device according to the fourteenth embodiment has a two-stage structure. That is, the inner surface of the recess 5 'is provided with a tapered surface 4b whose inner diameter gradually increases from the bottom side to the opening side of the recess 5' and is inclined at an angle of about 45 degrees. A reflection surface 4c is formed and has a cross-sectional shape such that light from the LED chip 2 can be reflected and condensed in a desired direction from the tip of the tapered surface 4b to the opening. A pair of wiring patterns 8 are formed on the same straight line passing through the protrusion 11 on the surface of the insulating member 4 on the side opposite to the substrate 3. For example, a reflection film 18 made of a material having a high reflectance such as silver is formed. Then, the sealing resin 10 ′ is injected into the recess 5 ′ until it reaches the tip of the tapered surface 4 b. The configuration other than the side surface shape of the recess 5 ′ is the same as that of the fourteenth embodiment.

【手続補正１４】[Procedure amendment 14]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１０９[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１０９】（実施形態１６）本発明の実施形態１６を
図１６を参照して説明する。本実施形態の光源装置１
は、実施形態３で説明した光源装置１と同様の構造を有
しており、実施形態３では基板３にＬＥＤチップ２を１
個実装しているが、本実施形態では基板３にＬＥＤチッ
プ２を２個実装し、２個のＬＥＤチップ２を配線パター
ン８を介して直列に接続している。尚、光源装置１の基
本的な構成は実施形態３と同様であるので、同一の構成
要素には同一の符号を付して、その説明は省略する。[0109] The embodiment 16 of the present invention (Embodiment 16)
This will be described with reference to FIG . Light source device 1 of the present embodiment
Has a structure similar to that of the light source device 1 described in the third embodiment.
In this embodiment, two LED chips 2 are mounted on the substrate 3, and the two LED chips 2 are connected in series via the wiring pattern 8. Note that the basic configuration of the light source device 1 is the same as that of the third embodiment.

【手続補正１５】[Procedure amendment 15]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１１３[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１１３】（実施形態１７）本発明の実施形態１７を
図１７を参照して説明する。本実施形態では、実施形態
３で説明した光源装置１において、基板３の突台部１１
を除いた部分を直径が約５ｍｍ、高さが約１０ｍｍの円
柱形状として、上面略中央に突台部１１を突設してい
る。一方、絶縁部材４の平面形状を一辺が約１０ｍｍの
正方形としており、絶縁部材４の前面側に形成した配線
パターン８を側面を通って裏面側まで延伸し、裏面側に
回り込むように延伸された部位を外部接続端子８ｄとし
ている。尚、基板３及び配線パターン８以外の構成は実
施形態３と同様であるので、同一の構成要素には同一の
符号を付して、その説明は省略する。[0113] The (Embodiment 17) Embodiment 17 of the present invention
This will be described with reference to FIG . In the present embodiment, in the light source device 1 described in the third embodiment, the protrusion 11
The portion excluding is made into a cylindrical shape having a diameter of about 5 mm and a height of about 10 mm, and a projecting base 11 is protruded at substantially the center of the upper surface. On the other hand, the planar shape of the insulating member 4 is a square having a side of about 10 mm, and the wiring pattern 8 formed on the front surface side of the insulating member 4 is extended to the rear surface side through the side surface, and is extended so as to go around the rear surface side. The portion is an external connection terminal 8d. Since the configuration other than the substrate 3 and the wiring pattern 8 is the same as that of the third embodiment, the same components are denoted by the same reference numerals and description thereof will be omitted.

【手続補正１６】[Procedure amendment 16]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１１４[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１１４】図１７は本実施形態の光源装置１を器具本
体４０に取り付けた状態を示している。器具本体４０
は、直径が約６ｍｍの丸孔４１が開口したガラスエポキ
シ製の配線基板４２を備え、丸孔４１内に光源装置１の
基板３を挿入して、絶縁部材４の裏面側に延伸された外
部接続端子８ｄを配線基板４２の上面に形成された配線
パターン４３に半田付けすることによって、光源装置１
が器具本体４０に電気的且つ機械的に結合される。この
時、丸孔４１から下方に突出する基板３の下面が器具本
体４０の放熱部品４４に熱結合されるので、光源装置１
の放熱性が向上する。このように、基板３の下面を配線
基板４２とは別に用意した放熱部品４４と接触させ、放
熱部品４４を介してＬＥＤチップ２の発熱を放熱してい
るので、配線基板４２には熱伝導性は低いものの安価な
ガラスエポキシ基板を用いることができ、コストダウン
を図ることができる。FIG . 17 shows a state in which the light source device 1 according to the present embodiment is attached to the instrument body 40. Instrument body 40
Is provided with a wiring board 42 made of glass epoxy and having a round hole 41 with a diameter of about 6 mm, in which the substrate 3 of the light source device 1 is inserted into the round hole 41, and the outside extended to the back side of the insulating member 4. By soldering the connection terminal 8d to the wiring pattern 43 formed on the upper surface of the wiring board 42, the light source device 1
Are electrically and mechanically coupled to the instrument body 40. At this time, the lower surface of the substrate 3 protruding downward from the round hole 41 is thermally coupled to the heat radiating component 44 of the fixture body 40, so that the light source device 1
Improves the heat dissipation. As described above, since the lower surface of the substrate 3 is brought into contact with the heat radiating component 44 prepared separately from the wiring substrate 42 and the heat generated by the LED chip 2 is radiated through the heat radiating component 44, the wiring substrate 42 has thermal conductivity. However, an inexpensive glass epoxy substrate can be used, and the cost can be reduced.

【手続補正１７】[Procedure amendment 17]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１１６[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１１６】（実施形態１８）本発明の実施形態１８を
図１８を参照して説明する。本実施形態では、実施形態
３の光源装置１において、基板３の突台部１１を除いた
部分を直径が約５ｍｍ、高さが約０．５ｍｍの円柱形状
として、上面略中央に突台部１１を突設している。一
方、絶縁部材４の平面形状を一辺が約２０ｍｍの正方形
としており、基板３側の面に貫通孔６を中心とする直径
が約５ｍｍ、深さが約０．５ｍｍの凹部２７を設けてい
る。そして、絶縁部材４における凹部２７の外側の部位
であって、絶縁部材４の前面側に設けた配線パターン８
に対応する部位に絶縁部材４を貫通するスルーホール２
８を設け、スルーホール２８内に導電材料を充填して形
成された導電部８ｅを介して絶縁部材４の前面側に形成
された配線パターン８と裏面側に形成された接続端子８
ｆとを電気的に接続している。尚、基板３、絶縁部材４
及び配線パターン８以外の構成は実施形態３と同様であ
るので、同一の構成要素には同一の符号を付して、その
説明は省略する。[0116] The (Embodiment 18) Embodiment 18 of the present invention
This will be described with reference to FIG . In the present embodiment, in the light source device 1 of the third embodiment, the portion of the substrate 3 excluding the protruding portion 11 is formed into a columnar shape having a diameter of about 5 mm and a height of about 0.5 mm. 11 are protruding. On the other hand, the planar shape of the insulating member 4 is a square having a side of about 20 mm, and a recess 27 having a diameter of about 5 mm centering on the through hole 6 and a depth of about 0.5 mm is provided on the surface on the substrate 3 side. . Then, the wiring pattern 8 provided on the front side of the insulating member 4 at a position outside the recess 27 in the insulating member 4.
Through hole 2 penetrating insulating member 4 at a portion corresponding to
8, a wiring pattern 8 formed on the front side of the insulating member 4 and a connection terminal 8 formed on the back side via a conductive portion 8e formed by filling a conductive material in the through hole 28.
f is electrically connected. In addition, the substrate 3, the insulating member 4,
The configuration other than the wiring pattern 8 is the same as that of the third embodiment.

【手続補正１８】[Procedure amendment 18]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１１７[Correction target item name] 0117

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１１７】図１８は本実施形態の光源装置１を器具本
体の配線基板４２に実装した状態を示している。ここ
で、基板３の下面と絶縁部材４の下面とが略面一になる
よう各部の寸法関係が設定されており、基板３を配線基
板４２上に載置すると、絶縁部材４に設けた接続端子８
ｆが配線基板４２に設けた配線パターン４３に電気的に
接続されるので、配線基板４２からＬＥＤチップ２に給
電することができる。したがって、この光源装置１を配
線基板４２に取り付けるにあたり、光源装置１を配線基
板４２のパターン面にそのまま実装することができ、し
かも基板３の下面が配線基板４２と接触するので、光源
装置１の放熱を配線基板４２を通じて放出することがで
き、放熱性の良好な表面実装形の光源装置１を実現でき
る。FIG . 18 shows a state in which the light source device 1 according to the present embodiment is mounted on a wiring board 42 of an instrument body. Here, the dimensional relationship of each part is set such that the lower surface of the substrate 3 and the lower surface of the insulating member 4 are substantially flush. When the substrate 3 is mounted on the wiring board 42, the connection provided on the insulating member 4 Terminal 8
Since f is electrically connected to the wiring pattern 43 provided on the wiring board 42, power can be supplied from the wiring board 42 to the LED chip 2. Therefore, when attaching the light source device 1 to the wiring board 42, the light source device 1 can be directly mounted on the pattern surface of the wiring board 42, and the lower surface of the substrate 3 contacts the wiring board 42. The heat can be dissipated through the wiring board 42, and the surface-mounted light source device 1 having good heat dissipation can be realized.

【手続補正１９】[Procedure amendment 19]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１１９[Correction target item name] 0119

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１１９】（実施形態１９）本発明の実施形態１９を
図１９を参照して説明する。実施形態３の光源装置１で
は基板３の一面のみにＬＥＤチップ２を実装している
が、本実施形態の光源装置１では基板３の両面にＬＥＤ
チップ２を実装している。尚、基板３の両面にＬＥＤチ
ップ２を実装している点以外は実施形態３と同様である
ので、同一の構成要素には同一の符号を付して、その説
明は省略する。[0119] The embodiment 19 of (Embodiment 19) The present invention will be described with reference to FIG. 19. In the light source device 1 according to the third embodiment, the LED chip 2 is mounted on only one surface of the substrate 3.
Chip 2 is mounted. The third embodiment is the same as the third embodiment except that the LED chips 2 are mounted on both surfaces of the substrate 3. Therefore, the same components are denoted by the same reference numerals and description thereof will be omitted.

【手続補正２０】[Procedure amendment 20]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２３[Correction target item name] 0123

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２３】（実施形態２０）以下に、本実施形態の光
源装置１の製造方法を図２０（ａ）〜（ｅ）を参照して
説明する。尚、本実施形態の光源装置１の構造は実施形
態３と同様であるので、同一の構成要素には同一の符号
を付して、その説明を省略する。[0123] (Embodiment 20) Hereinafter, a manufacturing method of the light source apparatus 1 of this embodiment with reference to FIG. 20 (a) ~ (e). Note that the structure of the light source device 1 of the present embodiment is the same as that of the third embodiment.

【手続補正２１】[Procedure amendment 21]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２４[Correction target item name] 0124

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２４】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、シ
ンジオタクチックポリスチレン（以下ＳＰＳと記す）、
ポリブチレンテレフタレート（以下ＰＢＴと記す）など
の絶縁材料から形成されたＭＩＤ（Molded Interconnec
t Device）を用いており、射出成形或いはトランスファ
ー成形によって凹所５’及び貫通孔６を形成している
（図２０（ａ）参照）。そして、絶縁部材４の表面全体
に、真空蒸着、ＤＣスパッタリング法、或いは、ＲＦス
パッタリング法を用いて膜厚が例えば０．３μｍの銅薄
膜を形成する。次に、銅薄膜を形成した基板３の表面に
レーザ等の電磁波を照射して、電磁波を照射した部分の
めっき下地層を除去する。尚、この時照射するレーザと
しては、第２或いは第３高調波ＹＡＧレーザ、ＹＡＧレ
ーザなどめっき下地材の吸収が良いものが好ましく、例
えばガルバノミラーで走査することによって、回路部
（配線パターン８）以外の絶縁スペースとなる部位（以
下、非回路部と言う）に照射されるものであり、少なく
とも非回路部における回路部との境界部分に非回路部の
パターンに沿って照射することにより、非回路部におけ
る回路部との境界領域のめっき下地層を除去するもので
ある。その後、回路部に給電して、電気銅めっき、電気
ニッケルめっき、電気銀めっきなどを行い、所定の膜厚
の金属膜を形成した配線パターン８を形成した後、非回
路部をソフトエッチングなどで除去する（図２０（ｂ）
参照）。尚、電気銀めっきの代わりに電気金めっきを施
しても良く、光の反射効率や配線作業性を考慮してめっ
きの材料や厚みを適宜決定すれば良い。As the insulating member 4, for example, a liquid crystal polymer, polyphthalamide, polyphthalsulfone, epoxy, syndiotactic polystyrene (hereinafter referred to as SPS),
MID (Molded Interconnec) formed from an insulating material such as polybutylene terephthalate (hereinafter referred to as PBT)
t Device), and the recess 5 ′ and the through hole 6 are formed by injection molding or transfer molding (see FIG. 20A ). Then, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the substrate 3 on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser, and the plating underlayer in the portion irradiated with the electromagnetic wave is removed. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section. Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed to form a wiring pattern 8 having a metal film having a predetermined thickness, and then the non-circuit portion is subjected to soft etching or the like. Remove ( FIG. 20 (b)
reference). Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【手続補正２２】[Procedure amendment 22]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２５[Correction target item name] 0125

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２５】次に、アルミニウム、銀、銅など熱伝導性
の良好な材料から形成された基板３を、エポキシ樹脂や
アクリル樹脂などの接着剤を用いて、絶縁部材４の下面
に貼り付ける（図２０（ｃ）参照）。この時、絶縁部材
４の貫通孔６に対応する基板３の部位に予め突台部１１
を形成しておくのが望ましい。また、接着剤を用い基板
３及び絶縁部材４を貼り合わせる代わりに、突台部１１
を貫通孔６に圧入することによって、基板３及び絶縁部
材４を結合するようにしても良い。Next, the substrate 3 made of a material having good heat conductivity such as aluminum, silver, and copper is attached to the lower surface of the insulating member 4 using an adhesive such as an epoxy resin or an acrylic resin (see FIG. 20 (c)). At this time, a projecting part 11 is previously provided in a portion of the substrate 3 corresponding to the through hole 6 of the insulating member 4.
Is desirably formed. Also, instead of bonding the substrate 3 and the insulating member 4 using an adhesive, the
May be press-fitted into the through holes 6 to couple the substrate 3 and the insulating member 4.

【手続補正２３】[Procedure amendment 23]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２６[Correction target item name] 0126

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２６】その後、絶縁部材４に設けた貫通孔６から
露出する基板３の部位に、青色ＬＥＤチップ２を透光性
を有する接着剤を用いてダイボンドし、直径が例えば２
５μｍの金のボンディングワイヤ９を用いてワイヤボン
ディングを行う（図２０（ｄ）参照）。Thereafter, the blue LED chip 2 is die-bonded to a portion of the substrate 3 exposed from the through hole 6 provided in the insulating member 4 by using a translucent adhesive, and has a diameter of, for example, 2 mm.
Wire bonding is performed using a 5 μm gold bonding wire 9 (see FIG . 20D).

【手続補正２４】[Procedure amendment 24]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２７[Correction target item name] 0127

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２７】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
０（ｅ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by the blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in the resin is injected into the recess 5 ′.
The ED chip 2 and the bonding wires 9 are sealed ( FIG. 2
0 (e)).

【手続補正２５】[Procedure amendment 25]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１２９[Correction target item name] 0129

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１２９】（実施形態２１）以下に、本実施形態の光
源装置の製造方法を図２１（ａ）〜（ｄ）を参照して説
明する。尚、本実施形態の光源装置１の構造は実施形態
３の光源装置と同様であるので、同一の構成要素には同
一の符号を付して、その説明を省略する。[0129] (Embodiment 21) Hereinafter, a manufacturing method of the light source apparatus of the present embodiment with reference to FIG. 21 (a) ~ (d). Since the structure of the light source device 1 of the present embodiment is the same as that of the light source device of the third embodiment, the same components are denoted by the same reference numerals, and description thereof will be omitted.

【手続補正２６】[Procedure amendment 26]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３０[Correction target item name] 0130

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３０】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、Ｓ
ＰＳ、ＰＢＴなどの絶縁材料から形成されたＭＩＤを用
いている。また、基板３の材料として銀、アルミ、銅な
どの熱伝導性の良好な材料を用い、基板３と絶縁部材４
とをインサート成形により同時に形成する（図２１
（ａ）参照）。As the insulating member 4, for example, a liquid crystal polymer,
Phthalamide, polyphthalsulfone, epoxy, S
Uses MID formed from insulating materials such as PS and PBT
Have been. In addition, silver, aluminum, copper, etc.
The substrate 3 and the insulating member 4 are made of any material having good thermal conductivity.
And are simultaneously formed by insert molding (FIG.
(A)).

【手続補正２７】[Procedure amendment 27]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３１[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３１】その後、絶縁部材４の表面全体に、真空蒸
着、ＤＣスパッタリング法、或いは、ＲＦスパッタリン
グ法を用いて膜厚が例えば０．３μｍの銅薄膜を形成す
る。次に、銅薄膜を形成した基板３の表面にレーザ等の
電磁波を照射して、電磁波を照射した部分のめっき下地
層を除去する。尚、この時照射するレーザとしては、第
２或いは第３高調波ＹＡＧレーザ、ＹＡＧレーザなどめ
っき下地材の吸収が良いものが好ましく、例えばガルバ
ノミラーで走査することによって、回路部（配線パター
ン８）以外の絶縁スペースとなる部位（以下、非回路部
と言う）に照射されるものであり、少なくとも非回路部
における回路部との境界部分に非回路部のパターンに沿
って照射することにより、非回路部における回路部との
境界領域のめっき下地層を除去するものである。その
後、回路部に給電して、電気銅めっき、電気ニッケルめ
っき、電気銀めっきなどを行い、所定の膜厚の金属膜を
形成した配線パターン８を形成した後、非回路部をソフ
トエッチングなどで除去する（図２１（ｂ）参照）。
尚、電気銀めっきの代わりに電気金めっきを施しても良
く、光の反射効率や配線作業性を考慮してめっきの材料
や厚みを適宜決定すれば良い。Thereafter, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the substrate 3 on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser, and the plating underlayer in the portion irradiated with the electromagnetic wave is removed. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section. Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed to form a wiring pattern 8 having a metal film having a predetermined thickness, and then the non-circuit portion is subjected to soft etching or the like. It is removed (see FIG. 21B ).
Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【手続補正２８】[Procedure amendment 28]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３２[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３２】その後、絶縁部材４に設けた貫通孔６から
露出する基板３の部位に、青色ＬＥＤチップ２を透光性
を有する接着剤を用いてダイボンドし、直径が例えば２
５μｍの金のボンディングワイヤ９を用いてワイヤボン
ディングを行う（図２１（ｃ）参照）。Thereafter, the blue LED chip 2 is die-bonded to a portion of the substrate 3 exposed from the through-hole 6 provided in the insulating member 4 by using a translucent adhesive, and has a diameter of, for example, 2 mm.
Wire bonding is performed using a 5 μm gold bonding wire 9 (see FIG. 21C ).

【手続補正２９】[Procedure amendment 29]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３３[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３３】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
１（ｄ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by the blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in the resin is injected into the recess 5 ′,
The ED chip 2 and the bonding wires 9 are sealed ( FIG. 2
1 (d)).

【手続補正３０】[Procedure amendment 30]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３５[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３５】（実施形態２２）以下に、本実施形態の光
源装置の製造方法を図２２（ａ）〜（ｅ）を参照して説
明する。尚、本実施形態の光源装置１の構造は実施形態
３の光源装置と略同様であるので、同一の構成要素には
同一の符号を付して、その説明を省略する。[0135] (Embodiment 22) Hereinafter, a manufacturing method of the light source apparatus of the present embodiment with reference to FIG. 22 (a) ~ (e). Note that the structure of the light source device 1 of the present embodiment is substantially the same as that of the light source device of the third embodiment, and therefore, the same components are denoted by the same reference numerals and description thereof will be omitted.

【手続補正３１】[Procedure amendment 31]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３６[Correction target item name] 0136

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３６】先ず厚みが約１ｍｍのリードフレーム２０
ａを打ち抜いて、曲げ等の形状を形成することにより、
突台部１１の突設された基板３を形成すると共に、厚み
が約０．２ｍｍのリードフレーム２０ｂを打ち抜いて、
曲げ等の形状を形成することにより、突台部１１を挿通
させる挿通孔８ａが形成された配線部８’を形成してい
る（図２２（ａ）参照）。尚、リードフレーム２０ａ，
２０ｂの材料としては、例えば銅、４２アロイなど導電
性、熱伝導性の優れた材料を用いている。First, the lead frame 20 having a thickness of about 1 mm
By punching out a and forming a shape such as bending,
Forming the substrate 3 on which the protruding portion 11 is provided, and punching out a lead frame 20b having a thickness of about 0.2 mm,
By forming a shape such as bending, a wiring portion 8 ′ in which an insertion hole 8 a through which the projecting portion 11 is inserted is formed (see FIG. 22A ). Note that the lead frames 20a,
As the material of 20b, a material having excellent conductivity and heat conductivity such as copper and 42 alloy is used.

【手続補正３２】[Procedure amendment 32]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３７[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３７】そして、ＬＥＤチップ２がダイボンドされ
る突台部１１と、ボンディングワイヤ９の接続される配
線部８’の部位に部分的に電気ニッケルめっき、電気銀
めっきを行う。尚、ボンディングワイヤ９が接続される
ワイヤパッド部８ｂは、電気銀めっきの代わりに電気金
めっきを施しても良く、ボンディングワイヤ９の接続作
業を容易に行える（図２２（ｂ）参照）。Then, an electric nickel plating and an electric silver plating are partially applied to the protruding base 11 to which the LED chip 2 is die-bonded and the wiring section 8 'to which the bonding wire 9 is connected. The wire pad 8b to which the bonding wire 9 is connected may be plated with gold instead of silver, so that the bonding wire 9 can be easily connected (see FIG. 22B ).

【手続補正３３】[Procedure amendment 33]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３８[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３８】次に、ＭＩＤの材料として液晶ポリマー、
ポリフタルアミド、ポリフタルサルフォン、エポキシ、
ＳＰＳ、ＰＢＴなどの絶縁性を有する材料を用い、部分
めっきの施された配線部８’と基板３とをインサート成
形により同時成形する（図２２（ｃ）参照）。この時、
ＭＩＤからなる絶縁部材４に形成された凹所５’の底面
に、基板３の突台部１１と配線部８’のワイヤパッド部
８ｂとが露出する。Next, a liquid crystal polymer as a material of the MID,
Polyphthalamide, polyphthalsulfone, epoxy,
Using a material having an insulating property such as SPS or PBT, the wiring portion 8 'partially plated and the substrate 3 are simultaneously molded by insert molding (see FIG . 22C). At this time,
On the bottom surface of the concave portion 5 'formed in the insulating member 4 made of MID, the projecting base 11 of the substrate 3 and the wire pad portion 8b of the wiring portion 8' are exposed.

【手続補正３４】[Procedure amendment 34]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１３９[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１３９】その後、基板３の突台部１１に青色ＬＥＤ
チップ２を透光性を有する接着剤を用いてダイボンド
し、直径が例えば２５μｍの金のボンディングワイヤ９
を用いてワイヤボンディングを行う（図２２（ｄ）参
照）。After that, the blue LED is
The chip 2 is die-bonded using a translucent adhesive and a gold bonding wire 9 having a diameter of, for example, 25 μm.
Is used to perform wire bonding (see FIG . 22D).

【手続補正３５】[Procedure amendment 35]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４０[Correction target item name] 0140

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４０】最後に、ＬＥＤチップ２の青色発光により
励起され補色である黄色発光を行う蛍光体粒子を樹脂中
に分散させた封止樹脂１０’を凹所５’に注入して、Ｌ
ＥＤチップ２やボンディングワイヤ９を封止する（図２
２（ｅ）参照）。Finally, a sealing resin 10 ′ in which phosphor particles which are excited by blue light emission of the LED chip 2 and emit a complementary yellow light are dispersed in a resin is injected into the recess 5 ′,
The ED chip 2 and the bonding wires 9 are sealed ( FIG. 2
2 (e)).

【手続補正３６】[Procedure amendment 36]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４２[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４２】（実施形態２３）以下に、本実施形態の光
源装置の製造方法を図２３（ａ）〜（ｆ）を参照して説
明する。尚、本実施形態の光源装置の構造は実施形態６
の光源装置と同様であるので、同一の構成要素には同一
の符号を付してその説明を省略する。[0142] (Embodiment 23) Hereinafter, a manufacturing method of the light source apparatus of the present embodiment with reference to FIG. 23 (a) ~ (f). The structure of the light source device of the present embodiment is the same as that of the light source device of the sixth embodiment.
Therefore, the same components are denoted by the same reference numerals, and description thereof is omitted.

【手続補正３７】[Procedure amendment 37]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４３[Correction target item name] 0143

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４３】絶縁部材４として例えば液晶ポリマー、ポ
リフタルアミド、ポリフタルサルフォン、エポキシ、Ｓ
ＰＳ、ＰＢＴなどの絶縁材料から形成されたＭＩＤを用
いている。また、ベース板３’の材料として銀、アル
ミ、銅などの熱伝導性の良好な材料を用い、ベース板
３’と絶縁部材４とをインサート成形により同時に形成
する（図２３（ａ）参照）。As the insulating member 4, for example, a liquid crystal polymer, polyphthalamide, polyphthalsulfone, epoxy, S
An MID formed from an insulating material such as PS or PBT is used. Further, a material having good thermal conductivity such as silver, aluminum, or copper is used as a material of the base plate 3 ', and the base plate 3' and the insulating member 4 are simultaneously formed by insert molding (see FIG. 23A ). .

【手続補正３８】[Procedure amendment 38]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４４[Correction target item name] 0144

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４４】その後、絶縁部材４の表面全体に、真空蒸
着、ＤＣスパッタリング法、或いは、ＲＦスパッタリン
グ法を用いて膜厚が例えば０．３μｍの銅薄膜を形成す
る。次に、銅薄膜を形成したベース板３’の表面にレー
ザ等の電磁波を照射して、電磁波を照射した部分のめっ
き下地層を除去する。尚、この時照射するレーザとして
は、第２或いは第３高調波ＹＡＧレーザ、ＹＡＧレーザ
などめっき下地材の吸収が良いものが好ましく、例えば
ガルバノミラーで走査することによって、回路部（配線
パターン８）以外の絶縁スペースとなる部位（以下、非
回路部と言う）に照射されるものであり、少なくとも非
回路部における回路部との境界部分に非回路部のパター
ンに沿って照射することにより、非回路部における回路
部との境界領域のめっき下地層を除去するものである。
その後、回路部に給電して、電気銅めっき、電気ニッケ
ルめっき、電気銀めっきなどを行い、所定の膜厚の金属
膜を形成した配線パターン８を形成した後、非回路部を
ソフトエッチングなどで除去する（図２３（ｂ）参
照）。尚、電気銀めっきの代わりに電気金めっきを施し
ても良く、光の反射効率や配線作業性を考慮してめっき
の材料や厚みを適宜決定すれば良い。After that, a copper thin film having a thickness of, for example, 0.3 μm is formed on the entire surface of the insulating member 4 by using vacuum evaporation, DC sputtering, or RF sputtering. Next, the surface of the base plate 3 'on which the copper thin film is formed is irradiated with an electromagnetic wave such as a laser to remove the plating underlayer in the portion irradiated with the electromagnetic wave. The laser to be irradiated at this time is preferably a laser having good absorption of the plating base material, such as a second or third harmonic YAG laser or a YAG laser. Irradiation is performed on a portion serving as an insulating space other than the non-circuit portion (hereinafter, referred to as a non-circuit portion). This is to remove the plating underlayer in the boundary area between the circuit section and the circuit section.
Thereafter, power is supplied to the circuit portion, and an electric copper plating, an electric nickel plating, an electric silver plating, and the like are performed to form a wiring pattern 8 having a metal film having a predetermined thickness, and then the non-circuit portion is subjected to soft etching or the like. It is removed (see FIG . 23B). Note that electrogold plating may be performed instead of electrosilver plating, and the material and thickness of the plating may be appropriately determined in consideration of light reflection efficiency and wiring workability.

【手続補正３９】[Procedure amendment 39]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４５[Correction target item name] 0145

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４５】次に、アルミニウムや銅などの熱伝導性の
良好な金属から柱状（角柱又は円柱）の熱伝導体１４を
形成し、熱伝導体１４の上面にＬＥＤチップ２を透光性
を有するボンディングペーストを用いてダイボンドした
後（図２３（ｃ）参照）、ベース板３’及び絶縁部材４
にそれぞれ形成された連通孔１３及び貫通孔６内にベー
ス板３’側からＬＥＤチップ２の実装された熱伝導体１
４を圧入する（図２３（ｄ）参照）。この時、熱伝導体
１４はベース板３’に設けた連通孔１３内に圧入されて
いるので、熱伝導体１４とベース板３’とが密着し、熱
伝導体１４とベース板３’との間の熱伝導が大きくな
る。Next, a columnar (square or cylindrical) heat conductor 14 is formed from a metal having good heat conductivity such as aluminum or copper, and the LED chip 2 is provided on the upper surface of the heat conductor 14 with a light-transmitting property. After die bonding using a bonding paste (see FIG. 23 (c)), the base plate 3 'and the insulating member 4
The heat conductor 1 on which the LED chip 2 is mounted from the side of the base plate 3 'in the communication hole 13 and the through hole 6 respectively formed in
4 (see FIG. 23 (d)). At this time, since the heat conductor 14 is press-fitted into the communication hole 13 provided in the base plate 3 ', the heat conductor 14 and the base plate 3' come into close contact with each other, and the heat conductor 14 and the base plate 3 ' During the heat transfer.

【手続補正４０】[Procedure amendment 40]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】０１４６[Correction target item name] 0146

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【０１４６】その後、ＬＥＤチップ２上面の電極と配線
パターン８との間を、直径が例えば２５μｍの金のボン
ディングワイヤ９を介して接続し（図２３（ｅ）参
照）、ＬＥＤチップ２の青色発光により励起され補色で
ある黄色発光を行う蛍光体粒子を樹脂中に分散させた封
止樹脂１０’を凹所５’に注入して、ＬＥＤチップ２や
ボンディングワイヤ９を封止する（図２３（ｆ）参
照）。Thereafter, the electrode on the upper surface of the LED chip 2 and the wiring pattern 8 are connected via a gold bonding wire 9 having a diameter of, for example, 25 μm (see FIG. 23 (e)), and the LED chip 2 emits blue light. The LED chip 2 and the bonding wire 9 are sealed by injecting the sealing resin 10 ′ in which the phosphor particles that emit the complementary color yellow that are excited by the above are dispersed in the resin, into the recess 5 ′ ( FIG. 23 ( f)).

【手続補正４１】[Procedure amendment 41]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】図面の簡単な説明[Correction target item name] Brief description of drawings

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図面の簡単な説明】[Brief description of the drawings]

【図１】実施形態１の光源装置を示し、（ａ）は断面
図、（ｂ）は平面図である。FIGS. 1A and 1B show a light source device according to a first embodiment, wherein FIG. 1A is a cross-sectional view and FIG.

【図２】実施形態２の光源装置を示す断面図である。FIG. 2 is a cross-sectional view illustrating a light source device according to a second embodiment.

【図３】（ａ）（ｂ）は実施形態３の光源装置を示す断
面図である。FIGS. 3A and 3B are cross-sectional views illustrating a light source device according to a third embodiment.

【図４】（ａ）（ｂ）は実施形態４の光源装置を示す断
面図である。FIGS. 4A and 4B are cross-sectional views illustrating a light source device according to a fourth embodiment.

【図５】実施形態５の光源装置を示す断面図である。FIG. 5 is a cross-sectional view illustrating a light source device according to a fifth embodiment.

【図６】実施形態６の光源装置を示す断面図である。FIG. 6 is a cross-sectional view illustrating a light source device according to a sixth embodiment.

【図７】実施形態７の光源装置を示す断面図である。FIG. 7 is a cross-sectional view illustrating a light source device according to a seventh embodiment.

【図８】実施形態８の光源装置を示す断面図である。FIG. 8 is a cross-sectional view illustrating a light source device according to an eighth embodiment.

【図９】実施形態９の光源装置を示す断面図である。FIG. 9 is a cross-sectional view illustrating a light source device according to a ninth embodiment.

【図１０】実施形態１０の光源装置を示す断面図であ
る。FIG. 10 is a cross-sectional view illustrating a light source device according to a tenth embodiment.

【図１１】実施形態１１の光源装置を示す断面図であ
る。FIG. 11 is a cross-sectional view illustrating a light source device according to an eleventh embodiment.

【図１２】実施形態１２の光源装置を示し、（ａ）は断
面図、（ｂ）は平面図である。12A and 12B illustrate a light source device according to a twelfth embodiment, where FIG. 12A is a cross-sectional view and FIG. 12B is a plan view.

【図１３】実施形態１３の光源装置を示し、（ａ）は断
面図、（ｂ）は平面図である。13A and 13B show a light source device according to a thirteenth embodiment, wherein FIG. 13A is a cross-sectional view and FIG. 13B is a plan view.

【図１４】実施形態１４の光源装置を示す断面図であ
る。FIG. 14 is a sectional view showing a light source device according to a fourteenth embodiment.

【図１５】実施形態１５の光源装置を示す断面図であ
る。FIG. 15 is a sectional view showing a light source device according to a fifteenth embodiment.

【図１６】実施形態１６の光源装置を示す断面図であ
る。FIG. 16 is a sectional view showing a light source device according to a sixteenth embodiment.

【図１７】実施形態１７の光源装置を示す断面図であ
る。FIG. 17 is a sectional view showing a light source device according to a seventeenth embodiment.

【図１８】実施形態１８の光源装置を示す断面図であ
る。FIG. 18 is a sectional view showing a light source device according to an eighteenth embodiment.

【図１９】実施形態１９の光源装置を示す断面図であ
る。FIG. 19 is a sectional view showing a light source device according to a nineteenth embodiment.

【図２０】（ａ）〜（ｅ）は実施形態２０の光源装置の
各製造工程を示す断面図である。FIGS. 20 (a) to 20 (e) show a light source device according to a twentieth embodiment.
It is sectional drawing which shows each manufacturing process .

【図２１】（ａ）〜（ｄ）は実施形態２１の光源装置の
各製造工程を示す断面図である。FIGS. 21A to 21D are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 21. FIGS.

【図２２】（ａ）〜（ｅ）は実施形態２２の光源装置の
各製造工程を示す断面図である。FIGS. 22A to 22E are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 22. FIGS.

【図２３】（ａ）〜（ｆ）は実施形態２３の光源装置の
各製造工程を示す断面図である。FIGS. 23A to 23F are cross-sectional views illustrating respective manufacturing steps of the light source device according to Embodiment 23. FIGS.

【図２４】従来の光源装置の断面図である。FIG. 24 is a sectional view of a conventional light source device .

【図２５】従来の別の光源装置の断面図である。 FIG. 25 is a cross-sectional view of another conventional light source device .

【符号の説明】 １ 光源装置 ２ ＬＥＤチップ ３ 基板 ４ 絶縁部材 ４ａ 張出部 ６ 貫通孔 ８ 配線パターン ９ ボンディングワイヤ １０ 封止樹脂[Description of Signs] 1 light source device 2 LED chip 3 substrate 4 insulating member 4a overhang 6 through hole 8 wiring pattern 9 bonding wire 10 sealing resin

【手続補正４２】[Procedure amendment 42]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図１５[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図１５】 FIG.

【手続補正４３】[Procedure amendment 43]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図１６[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図１６】 FIG. 16

【手続補正４４】[Procedure amendment 44]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図１７[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図１７】 FIG.

【手続補正４５】[Procedure amendment 45]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図１８[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図１８】 FIG.

【手続補正４６】[Procedure amendment 46]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図１９[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図１９】 FIG.

【手続補正４７】[Procedure amendment 47]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２０[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２０】 FIG.

【手続補正４８】[Procedure amendment 48]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２１[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２１】 FIG. 21

【手続補正４９】[Procedure amendment 49]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２２[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２２】 FIG.

【手続補正５０】[Procedure amendment 50]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２３[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２３】 FIG. 23

【手続補正５１】[Procedure amendment 51]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２４[Correction target item name] FIG.

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２４】 FIG. 24

【手続補正５２】[Procedure amendment 52]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２５[Correction target item name] Fig. 25

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【図２５】 FIG. 25

【手続補正５３】[Procedure amendment 53]

【補正対象書類名】図面[Document name to be amended] Drawing

【補正対象項目名】図２６[Correction target item name] FIG. 26

【補正方法】削除[Correction method] Deleted

───────────────────────────────────────────────────── フロントページの続き (72)発明者 杉本 勝 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 橋本 拓磨 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 鈴木 俊之 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 中川 和也 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 小林 充 大阪府門真市大字門真1048番地松下電工株 式会社内 (72)発明者 橋爪 二郎 大阪府門真市大字門真1048番地松下電工株 式会社内 Ｆターム(参考） 5F041 AA03 AA04 AA33 DA02 DA07 DA13 DA19 DA33 DA39 DA43 DA44 DA55 DA57 DB08 FF11 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor: Masaru Sugimoto 1048, Kazuma Kadoma, Osaka Prefecture, Japan Matsushita Electric Works, Ltd. (72) Inventor Takuma Hashimoto 1048, Kazuma, Kazuma, Kadoma, Osaka Matsushita Electric Works, Ltd. 72) Inventor Toshiyuki Suzuki 1048 Kadoma Kadoma, Kadoma City, Osaka Prefecture, Japan Inside Matsushita Electric Works Co., Ltd. (72) Inventor Kazuya Nakagawa 1048 Kadoma Odashi, Kadoma City, Osaka Prefecture Inside Matsushita Electric Works Co., Ltd. 1048, Kazuma, Kadoma, Fumonma-shi, Matsushita Electric Works, Ltd. DA44 DA55 DA57 DB08 FF11

Claims (27)

【特許請求の範囲】[Claims] 【請求項１】熱伝導性を有する基板と、基板の少なくと
も一方の面に配設された絶縁部材と、基板と対向する絶
縁部材の部位に絶縁部材を貫通して設けられた孔と、こ
の孔から露出する基板の部位に対向させ且つ熱結合させ
て配置されたＬＥＤチップと、絶縁部材に設けられ絶縁
部材によって基板と電気的に絶縁された配線部を含む給
電部と、給電部とＬＥＤチップの電極との間を電気的に
接続する接続部材と、孔内に充填されＬＥＤチップ及び
接続部材の全体を封止する透光性を有する封止材料とを
備えて成ることを特徴とする光源装置。A substrate having thermal conductivity; an insulating member provided on at least one surface of the substrate; a hole provided through the insulating member at a portion of the insulating member facing the substrate; An LED chip disposed so as to face and thermally couple to a portion of the substrate exposed from the hole, a power supply unit including a wiring unit provided on the insulating member and electrically insulated from the substrate by the insulating member; a power supply unit and the LED A connection member for electrically connecting the electrodes of the chip, and a light-transmitting sealing material filled in the hole to seal the entire LED chip and the connection member. Light source device. 【請求項２】ＬＥＤチップに接続部材を介して電気的に
接続される配線部の部位は孔内に配置されており、絶縁
部材における基板と反対側の面よりも基板側に位置する
ことを特徴とする請求項１記載の光源装置。2. A wiring portion electrically connected to the LED chip via a connecting member is disposed in the hole, and is located closer to the substrate than the surface of the insulating member opposite to the substrate. The light source device according to claim 1, wherein: 【請求項３】ＬＥＤチップに接続部材を介して電気的に
接続される配線部の部位は孔内に配置されており、封止
材料は孔の開口付近まで充填されたことを特徴とする請
求項１記載の光源装置。3. The wiring part electrically connected to the LED chip via a connecting member is disposed in the hole, and the sealing material is filled up to the vicinity of the opening of the hole. Item 2. The light source device according to item 1. 【請求項４】絶縁部材に設けた孔の基板側の開口縁に内
側に突出する張出部を設け、この張出部に配線部の少な
くとも一部を配置し、張出部に配置された配線部の部位
にＬＥＤチップの電極を電気的に接続しており、絶縁部
材側に突出し絶縁部材に設けた孔内に挿入される突台部
を基板に設け、この突台部にＬＥＤチップを対向させ且
つ熱結合させて配置したことを特徴とする請求項１記載
の光源装置。4. An overhanging portion is provided at an opening edge of the hole provided in the insulating member on the substrate side, and at least a part of the wiring portion is disposed on the overhanging portion, and is disposed on the overhanging portion. The electrode of the LED chip is electrically connected to the portion of the wiring portion, and a protruding portion that protrudes toward the insulating member and is inserted into a hole provided in the insulating member is provided on the substrate, and the LED chip is mounted on the protruding portion. 2. The light source device according to claim 1, wherein the light source device is arranged so as to face and thermally couple. 【請求項５】上記接続部材は金属線からなり、基板及び
絶縁部材の接合方向において、金属線の一端が接続され
るＬＥＤチップの部位と、金属線の他端が接続される配
線部の部位の高さを略同じ高さとしたことを特徴とする
請求項４記載の光源装置。5. The connecting member is made of a metal wire, and in the joining direction of the substrate and the insulating member, a portion of the LED chip to which one end of the metal wire is connected and a portion of a wiring portion to which the other end of the metal wire is connected. 5. The light source device according to claim 4, wherein the heights are substantially the same. 【請求項６】基板及び絶縁部材の接合方向において、Ｌ
ＥＤチップが実装される突台部と、ＬＥＤチップに電気
的に接続される配線部の部位の高さを略同じ高さとした
ことを特徴とする請求項４記載の光源装置。6. In the joining direction of the substrate and the insulating member, L
5. The light source device according to claim 4, wherein the height of the projecting portion on which the ED chip is mounted and the height of the wiring portion electrically connected to the LED chip are substantially the same. 【請求項７】突台部は、基板における絶縁部材と反対側
の面から打ち出し加工を行って凹所を形成することによ
り、基板における絶縁部材側の面に打ち出されたことを
特徴とする請求項４記載の光源装置。7. The substrate according to claim 1, wherein the protruding portion is formed on a surface of the substrate on the side of the insulating member by performing a punching process from a surface of the substrate opposite to the insulating member to form a recess. Item 5. The light source device according to item 4. 【請求項８】基板を、孔に連通する連通孔が形成された
ベース板と、連通孔内に取り付けられ先端が絶縁部材側
に突出する突起部とで構成し、突起部の先端により突台
部を構成したことを特徴とする請求項４記載の光源装
置。8. A substrate comprising: a base plate having a communication hole formed therein for communicating with the hole; and a projection mounted in the communication hole and having a tip projecting toward the insulating member. 5. The light source device according to claim 4, wherein the light source device comprises a unit. 【請求項９】孔と突台部との間に隙間を設けたことを特
徴とする請求項４記載の光源装置。9. The light source device according to claim 4, wherein a gap is provided between the hole and the protrusion. 【請求項１０】基板と絶縁部材との位置決めを行うため
の位置決め手段を基板と絶縁部材との接合面に設けたこ
とを特徴とする請求項１乃至９記載の光源装置。10. The light source device according to claim 1, wherein positioning means for positioning the substrate and the insulating member is provided on a joint surface between the substrate and the insulating member. 【請求項１１】基板と絶縁部材との接合面に接合に用い
る接着剤の溜まり部を絶縁部材の孔の周りに設けたこと
を特徴とする請求項１乃至９記載の光源装置。11. The light source device according to claim 1, wherein a pool of an adhesive used for bonding is provided around a hole of the insulating member on a bonding surface between the substrate and the insulating member. 【請求項１２】上記給電部は導電性材料により形成され
た基板を含み、基板とＬＥＤチップの電極とを電気的に
接続したことを特徴とする請求項１記載の光源装置。12. The light source device according to claim 1, wherein the power supply section includes a substrate formed of a conductive material, and the substrate and the electrode of the LED chip are electrically connected. 【請求項１３】上記基板に、互いに電気的に絶縁された
複数の領域を設けたことを特徴とする請求項１２記載の
光源装置。13. The light source device according to claim 12, wherein a plurality of regions electrically insulated from each other are provided on said substrate. 【請求項１４】封止材料の表面を、ＬＥＤチップの発光
を所望の方向に配光するレンズ形状としたことを特徴と
する請求項１記載の光源装置。14. The light source device according to claim 1, wherein the surface of the sealing material has a lens shape for distributing light emitted from the LED chip in a desired direction. 【請求項１５】孔の側壁にＬＥＤチップの発光を反射し
て所望の方向に配光する反射部を設けたことを特徴とす
る請求項１記載の光源装置。15. The light source device according to claim 1, wherein a reflection portion for reflecting light emitted from the LED chip and distributing light in a desired direction is provided on a side wall of the hole. 【請求項１６】上記反射部を配線部で兼用したことを特
徴とする請求項１５記載の光源装置。16. The light source device according to claim 15, wherein said reflection part is also used as a wiring part. 【請求項１７】上記接続部材は金属線からなり、金属線
の延びる方向に配線部を配設したことを特徴とする請求
項１５記載の光源装置。17. The light source device according to claim 15, wherein said connecting member is made of a metal wire, and a wiring portion is provided in a direction in which the metal wire extends. 【請求項１８】封止材料は、ＬＥＤチップから放射され
た光の少なくとも一部を所定の光色に変換する光色変換
機能を有することを特徴とする請求項１記載の光源装
置。18. The light source device according to claim 1, wherein the sealing material has a light color conversion function of converting at least a part of light emitted from the LED chip into a predetermined light color. 【請求項１９】封止材料の表面は、絶縁部材における基
板と反対側の面よりも基板側に位置し、孔の周壁にＬＥ
Ｄチップの発光を反射して所望の方向に配光する反射部
を設けたことを特徴とする請求項１８記載の光源装置。19. The surface of the sealing material is located closer to the substrate than the surface of the insulating member opposite to the substrate, and is provided with a LE
19. The light source device according to claim 18, further comprising a reflection unit that reflects light emitted from the D chip and distributes the light in a desired direction. 【請求項２０】配線部の一部を基板側に向かって延伸
し、この延伸した部分で外部接続端子を構成することを
特徴とする請求項１記載の光源装置。20. The light source device according to claim 1, wherein a part of the wiring portion extends toward the substrate, and the extended portion forms an external connection terminal. 【請求項２１】上記配線部の一部を、絶縁部材における
基板との対向面まで延伸させたことを特徴とする請求項
２０記載の光源装置。21. The light source device according to claim 20, wherein a part of the wiring portion is extended to a surface of the insulating member facing the substrate. 【請求項２２】絶縁部材の一部を基板側に向かって延伸
させ、この延伸した部分の先端を、基板における絶縁部
材と反対側の面と略面一にしたことを特徴とする請求項
２０又は２１記載の光源装置。22. The insulating member according to claim 20, wherein a portion of the insulating member is extended toward the substrate, and a tip of the extended portion is substantially flush with a surface of the substrate opposite to the insulating member. Or the light source device according to 21. 【請求項２３】絶縁部材とＬＥＤチップと配線部と封止
部材とが基板の両面に設けられたことを特徴とする請求
項１記載の光源装置。23. The light source device according to claim 1, wherein the insulating member, the LED chip, the wiring portion, and the sealing member are provided on both surfaces of the substrate. 【請求項２４】絶縁部材の一面に絶縁部材を貫通する孔
を形成すると共に、絶縁部材の一面に配線部を形成した
後、絶縁部材の他面に基板を接合し、孔から露出する基
板の部位に対向させ且つ熱結合させてＬＥＤチップを配
置し、配線部とＬＥＤチップの電極とを電気的に接続し
た後、孔内に透光性を有する封止材料を充填して、ＬＥ
Ｄチップ及びＬＥＤチップと配線部との電気的接続部の
全体を封止することを特徴とする光源装置の製造方法。24. After forming a hole through the insulating member on one surface of the insulating member and forming a wiring portion on one surface of the insulating member, the substrate is joined to the other surface of the insulating member, and the substrate is exposed from the hole. After the LED chip is arranged facing the portion and thermally bonded, and the wiring portion and the electrode of the LED chip are electrically connected, the hole is filled with a translucent sealing material, and LE
A method for manufacturing a light source device, comprising: sealing an entire electrical connection portion between a D chip and an LED chip and a wiring portion. 【請求項２５】基板と、基板に対向する面に孔が貫通し
て形成された絶縁部材とをインサート成形し、絶縁部材
における基板と反対側の面に配線部を形成した後、孔か
ら露出する基板の部位に対向させ且つ熱結合させてＬＥ
Ｄチップを配置し、配線部とＬＥＤチップの電極とを電
気的に接続した後、孔内に透光性を有する封止材料を充
填して、ＬＥＤチップ及びＬＥＤチップと配線部との電
気的接続部の全体を封止することを特徴とする光源装置
の製造方法。25. Insert molding a substrate and an insulating member having a hole penetrating a surface facing the substrate, forming a wiring portion on the surface of the insulating member opposite to the substrate, and exposing the wiring member to the wiring member. LE and facing the part of the substrate
After the D chip is arranged and the wiring portion and the electrode of the LED chip are electrically connected, the hole is filled with a translucent sealing material to electrically connect the LED chip and the LED chip to the wiring portion. A method for manufacturing a light source device, wherein a whole connection portion is sealed. 【請求項２６】基板と配線部を構成する導電板とを所定
の間隔をおいてインサート成形することにより絶縁部材
を形成し、絶縁部材を貫通して設けられた孔から露出す
る基板の部位に対向させ且つ熱結合させてＬＥＤチップ
を配置した後、配線部とＬＥＤチップの電極とを電気的
に接続し、孔内に透光性を有する封止材料を充填して、
ＬＥＤチップ及びＬＥＤチップと配線部との電気的接続
部の全体を封止することを特徴とする光源装置の製造方
法。26. An insulating member is formed by insert-molding a substrate and a conductive plate constituting a wiring portion at a predetermined interval, and an insulating member is formed on a portion of the substrate exposed from a hole provided through the insulating member. After arranging the LED chip by facing and thermally bonding, electrically connecting the wiring portion and the electrode of the LED chip, filling the hole with a sealing material having a light transmitting property,
A method for manufacturing a light source device, comprising sealing an entirety of an LED chip and an electrical connection portion between the LED chip and a wiring portion. 【請求項２７】基板と絶縁部材とを接合し、基板を貫通
して設けられ、絶縁部材を貫通する孔に連通する連通孔
に、ＬＥＤチップが実装された突起部を挿入して、ＬＥ
Ｄチップを絶縁部材の孔内に配置した後、配線部とＬＥ
Ｄチップの電極とを金属線を介して電気的に接続し、孔
内に透光性を有する封止材料を充填して、ＬＥＤチップ
及び金属線の全体を封止することを特徴とする光源装置
の製造方法。27. A method in which a substrate and an insulating member are joined, and a protrusion on which an LED chip is mounted is inserted into a communication hole provided through the substrate and communicating with a hole passing through the insulating member.
After placing the D chip in the hole of the insulating member, the wiring section and the LE
A light source, which is electrically connected to an electrode of a D chip via a metal wire, fills a hole with a translucent sealing material, and seals the entire LED chip and the metal wire. Device manufacturing method.
JP2001114502A 2000-07-13 2001-04-12 Light source device Expired - Lifetime JP4432275B2 (en)

Priority Applications (8)

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PCT/JP2001/010561 WO2002084750A1 (en) 2001-04-12 2001-12-03 Light source device using led, and method of producing same
EP01274117A EP1387412B1 (en) 2001-04-12 2001-12-03 Light source device using led, and method of producing same
DE60137972T DE60137972D1 (en) 2001-04-12 2001-12-03 LIGHT SOURCE ELEMENT WITH LED AND METHOD FOR THE PRODUCTION THEREOF
AT01274117T ATE425556T1 (en) 2001-04-12 2001-12-03 LIGHT SOURCE COMPONENT WITH LED AND METHOD FOR PRODUCING IT
US10/398,660 US6874910B2 (en) 2001-04-12 2001-12-03 Light source device using LED, and method of producing same
CNB018108806A CN1212676C (en) 2001-04-12 2001-12-03 Light source device using LED, and method of producing same
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