JP2006245032A - Light emitting device and led lamp - Google Patents

Light emitting device and led lamp Download PDF

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JP2006245032A
JP2006245032A JP2005054406A JP2005054406A JP2006245032A JP 2006245032 A JP2006245032 A JP 2006245032A JP 2005054406 A JP2005054406 A JP 2005054406A JP 2005054406 A JP2005054406 A JP 2005054406A JP 2006245032 A JP2006245032 A JP 2006245032A
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light emitting
emitting device
light
substrate
emitting element
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JP2006245032A5 (en
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Hiroaki Kawaguchi
洋明 川口
Satoshi Wada
聡 和田
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15158—Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device and an LED lamp using this which have high reliability, and are excellent in mass productivity with heat dissipation responding to output increase and quantity-of-light increase. <P>SOLUTION: Since Cu wiring layers 300A and 300B are provided on a Cu substrate 3 which consists of Cu with good heat dissipation through an insulating layer 301 and a reflector part 30 is formed by press working, it has good light reflectivity. Moreover, heat can be promptly radiated through the Cu substrate 3 in heat accompanying generation of the LED element 2, and it can respond to the output increase and of the light emitting device 1 and a calorific value increase accompanying the quantity-of-light increase with a margin. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、発光ダイオード（Light Emitting Diode：ＬＥＤ）素子を光源として用いた発光装置およびこれを用いたＬＥＤランプに関し、特に、高い信頼性を備え、高出力化、大光量化に対応した放熱性を有するとともに量産性に優れる発光装置およびＬＥＤランプに関する。   The present invention relates to a light emitting device using a light emitting diode (LED) element as a light source and an LED lamp using the light emitting device, and in particular, has high reliability and heat dissipation corresponding to high output and large light quantity. The present invention relates to a light-emitting device and an LED lamp which have excellent mass productivity.

従来の発光装置として、表面に導電体層を有するセラミックス基板にＬＥＤ素子を実装したものがある。このような発光装置では、セラミックス基板上に実装されたＬＥＤ素子の第１の電極と第２の電極を導電体層にそれぞれ電気的に接続し、エポキシ樹脂等の封止樹脂によってＬＥＤ素子およびセラミックス基板を封止することによりパッケージ化している。     As a conventional light emitting device, there is one in which an LED element is mounted on a ceramic substrate having a conductor layer on the surface. In such a light emitting device, the first electrode and the second electrode of the LED element mounted on the ceramic substrate are electrically connected to the conductor layer, respectively, and the LED element and the ceramic are sealed with a sealing resin such as an epoxy resin. It is packaged by sealing the substrate.

ＬＥＤ素子の発光に基づく光を効率良く取り出すために、ＬＥＤ素子が搭載される搭載面に光反射性を付与することが知られている。例えば、導電体層の表面にＡｇめっきを施すことによりＬＥＤ素子から放射される光の反射性が高められる。また、光反射性をより高めるものとして、ＬＥＤ素子の搭載部を凹状に形成し、その側壁を傾斜面とすることで素子側面方向に放射された光を反射して放射させる発光装置がある（例えば、特許文献１参照。）。   In order to efficiently extract light based on light emission of the LED element, it is known to impart light reflectivity to a mounting surface on which the LED element is mounted. For example, the reflectivity of light emitted from the LED element is enhanced by applying Ag plating to the surface of the conductor layer. Further, as a device that further enhances light reflectivity, there is a light emitting device that reflects and radiates light emitted in the side surface direction of the element by forming the mounting portion of the LED element in a concave shape and making its side wall an inclined surface ( For example, see Patent Document 1.)

特許文献１に記載された発光装置では、導体配線が形成されたセラミックスグリーンシートにＬＥＤ素子を載置する凹部であるキャビティーをプレス加工によって形成しており、キャビティーの側面部は開口方向に広くなるように傾斜面で形成されている。また、キャビティー側面の導体配線にはＡｇ等が被覆されて光反射層を構成している。
特開平９−４５９６５号公報（[００１８]〜[００２２]、図２、図３） In the light emitting device described in Patent Document 1, a cavity, which is a recess for placing the LED element, is formed by pressing on a ceramic green sheet on which conductor wiring is formed, and the side surface of the cavity is in the opening direction. It is formed with an inclined surface so as to be wide. The conductor wiring on the side surface of the cavity is coated with Ag or the like to form a light reflection layer.
JP-A-9-45965 ([0018] to [0022], FIGS. 2 and 3)

しかし、特許文献１のＬＥＤ素子によると、以下の問題がある。
（１）セラミックスからなる基板を用いているため、熱伝導性が十分でなく、近年のＬＥＤの高出力化、大光量化に伴って生じる発熱に対して放熱性に限界がある。
（２）放熱性についてはＡｌＮ等のセラミックスを用いることもできるが、高価なため、発光装置のコストアップを招くという問題がある。
（３）セラミックスと封止樹脂との熱膨張率差が大であるため、封止樹脂がセラミックス基板との封止界面で剥離を生じ、パッケージの信頼性を低下させるという問題がある。 However, the LED element of Patent Document 1 has the following problems.
(1) Since a substrate made of ceramics is used, the thermal conductivity is not sufficient, and there is a limit to the heat dissipation against the heat generated due to the recent increase in the output and the amount of light of the LED.
(2) Regarding heat dissipation, ceramics such as AlN can be used. However, since it is expensive, there is a problem that the cost of the light emitting device is increased.
(3) Since the difference in coefficient of thermal expansion between the ceramic and the sealing resin is large, there is a problem that the sealing resin is peeled off at the sealing interface with the ceramic substrate, thereby reducing the reliability of the package.

従って、本発明の目的は、高い信頼性を備え、高出力化、大光量化に対応した放熱性を有するとともに量産性に優れる発光装置およびこれを用いたＬＥＤランプを提供することにある。   Accordingly, it is an object of the present invention to provide a light emitting device having high reliability, heat dissipation corresponding to high output and large light quantity and excellent in mass productivity, and an LED lamp using the same.

本発明は、上記目的を達成するため、発光素子と、前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、前記発光素子を封止する封止部とを有することを特徴とする発光装置を提供する。   In order to achieve the above object, the present invention provides a light emitting element and first and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element via an insulating layer. Provided is a light-emitting device including a substrate made of a conductive material that is integrally provided and in which a mounting portion of the light-emitting element is provided by molding, and a sealing portion that seals the light-emitting element.

また、本発明は、上記目的を達成するため、発光素子と、前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、前記発光素子を封止する封止部と、前記封止部から入射する光を所望の方向に放射させる光学形状面を有した光学系とを有することを特徴とする発光装置を提供する。   In order to achieve the above object, according to the present invention, an insulating layer is provided between the light emitting element and the first and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element. A substrate made of a conductive material provided integrally with the mounting portion of the light emitting element by molding, a sealing portion that seals the light emitting element, and light incident from the sealing portion is desired. An optical system having an optical shape surface that emits light in a direction is provided.

また、本発明は、上記目的を達成するため、発光素子と、前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、前記発光素子を封止する封止部とを有する発光装置と、第１の面に前記発光装置と電気的に接続される配線パターンを有し、前記第１の面に複数の前記発光装置を所定の配列で実装し、前記発光装置の発光に基づく光を前記第１の面から第２の面に取り出して外部放射させる開口部を前記所定の配列で複数設けられる実装基板と、複数の前記発光装置の実装面と反対側の面に取り付けられる放熱部とを有することを特徴とするＬＥＤランプを提供する。   In order to achieve the above object, according to the present invention, an insulating layer is provided between the light emitting element and the first and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element. A light emitting device including a substrate made of a conductive material provided integrally with the mounting portion of the light emitting element, and a sealing portion for sealing the light emitting element; A wiring pattern electrically connected to the light emitting device, wherein the plurality of light emitting devices are mounted in a predetermined arrangement on the first surface, and light based on light emission of the light emitting device is transmitted from the first surface to the first surface; A mounting board provided with a plurality of openings for taking out to the surface of 2 and radiating to the outside in a predetermined arrangement; and a heat dissipating part attached to a surface opposite to the mounting surface of the plurality of light emitting devices. An LED lamp is provided.

本発明によると、発光素子を搭載する基板が導電材料で形成されていることにより、高い放熱性を確保できるとともに電気的な配線を材料の特性に基づいて容易に形成することができる。基板と第１および第２の配線層との間には絶縁層を介在させることで絶縁性を確保でき、発光素子への給電に必要な配線層の形成を可能にしている。また、封止樹脂、配線層、および基板との熱膨張差をセラミック基板を用いた場合と比べて小にできることから、封止樹脂との剥離を生じにくいものとでき、信頼性の向上を図れる。   According to the present invention, since the substrate on which the light emitting element is mounted is formed of a conductive material, high heat dissipation can be ensured and electrical wiring can be easily formed based on the characteristics of the material. Insulating properties can be ensured by interposing an insulating layer between the substrate and the first and second wiring layers, and a wiring layer necessary for power feeding to the light emitting element can be formed. In addition, since the difference in thermal expansion between the sealing resin, the wiring layer, and the substrate can be reduced as compared with the case of using a ceramic substrate, it can be made difficult to peel off from the sealing resin, and the reliability can be improved. .

（第１の実施の形態）
図１は、本発明の第１の実施の形態に係る発光装置を示し、（ａ）は発光装置の中央部における断面図、（ｂ）は発光装置の平面図である。 (First embodiment)
1A and 1B show a light emitting device according to a first embodiment of the present invention, in which FIG. 1A is a cross-sectional view of a central portion of the light emitting device, and FIG. 1B is a plan view of the light emitting device.

この発光装置１は、発光に基づいて青色光を放射するＬＥＤ素子２と、ＬＥＤ素子２を搭載するＣｕ基板３と、ＬＥＤ素子２の第１および第２の電極とＣｕ基板３上に設けられるＣｕ配線層３００Ａ、３００Ｂとを電気的に接続するＡｕからなるワイヤ４と、Ｃｕ基板３の素子搭載部分を封止するエポキシ樹脂等の透光性樹脂材料である封止樹脂５とを有する。   The light emitting device 1 is provided on an LED element 2 that emits blue light based on light emission, a Cu substrate 3 on which the LED element 2 is mounted, first and second electrodes of the LED element 2, and the Cu substrate 3. It has the wire 4 which consists of Au which electrically connects Cu wiring layer 300A, 300B, and sealing resin 5 which is translucent resin materials, such as an epoxy resin, which seals the element mounting part of Cu board | substrate 3. As shown in FIG.

ＬＥＤ素子２は、ＧａＮ系半導体からなる。ＧａＮ系半導体は、例えば、下地基板であるサファイア基板上に、ＡｌＮからなるバッファ層と、Ｓｉをドープしたｎ−ＧａＮ層と、ＩｎＧａＮからなる発光層と、Ｍｇをドープしたｐ−ＧａＮ層を順次、積層させたものである。そして、ＬＥＤ素子２は、サファイア基板側がＣｕ基板３に接するように所謂フェイスアップ型素子として搭載されている。このＬＥＤ素子２は、ｎ−ＧａＮ層に接続されるｎ側電極とｐ−ＧａＮ層に接続されるｐ側電極から電圧を印加することによって発光層で発光中心波長約４７０ｎｍの青色光を発する。この青色光は、サファイア基板側とは反対側の電極形成側である光取り出し面から外部放射される。   The LED element 2 is made of a GaN-based semiconductor. A GaN-based semiconductor is, for example, a buffer layer made of AlN, an n-GaN layer doped with Si, a light-emitting layer made of InGaN, and a p-GaN layer doped with Mg on a sapphire substrate, which is a base substrate. , Laminated. The LED element 2 is mounted as a so-called face-up element so that the sapphire substrate side contacts the Cu substrate 3. The LED element 2 emits blue light having a light emission center wavelength of about 470 nm by applying a voltage from an n-side electrode connected to the n-GaN layer and a p-side electrode connected to the p-GaN layer. This blue light is radiated from the light extraction surface on the electrode forming side opposite to the sapphire substrate side.

Ｃｕ基板３は、Ｃｕ合金材料からなり、表面にＳｉＯ２からなる絶縁層３０１を接着剤として薄膜状のＣｕ配線層３００Ａ、３００Ｂを一体的に有する。Ｃｕ配線層３００Ａ、３００Ｂの表面は、Ａｇめっきが施されて光反射性を有している。なお、絶縁層３０１は、Ｃｕ基板３とＣｕ配線層３００Ａ、３００Ｂとの剥離を防ぐためにフィラーを含有させて熱膨張率の調整を図ることが好ましい。また、Ｃｕ基板３は、熱伝導性および電気的特性に優れる材料であればアルミニウム（Ａｌ）等の他の材料で形成された基板であっても良い。 The Cu substrate 3 is made of a Cu alloy material, and integrally has thin-film Cu wiring layers 300A and 300B on the surface with an insulating layer 301 made of SiO 2 as an adhesive. The surfaces of the Cu wiring layers 300A and 300B are Ag-plated and have light reflectivity. Insulating layer 301 preferably contains a filler to adjust the coefficient of thermal expansion in order to prevent peeling between Cu substrate 3 and Cu wiring layers 300A and 300B. Further, the Cu substrate 3 may be a substrate formed of other materials such as aluminum (Al) as long as the material has excellent thermal conductivity and electrical characteristics.

また、Ｃｕ基板３は、図１（ａ）に示すようにＬＥＤ素子２を搭載する凹状の窪みをプレス加工によって成形された形状を有する。この窪みは、底面から開口部にかけて広がりを有するすり鉢状のリフレクタ部３０を構成し、リフレクタ部３０は光反射面を形成する傾斜部３０ＡとＬＥＤ素子２を搭載する素子搭載部３０Ｂとを有する。ＬＥＤ素子２は、素子搭載部３０ＢのＣｕ配線層３００Ａ上にＡｇペースト等の接着剤によって接着固定されており、ｎ側電極およびｐ側電極は、ワイヤ４を介して素子搭載部３０Ｂの対応するＣｕ配線層３００Ａ、３００Ｂに接続されている。   Further, the Cu substrate 3 has a shape formed by pressing a concave recess for mounting the LED element 2 as shown in FIG. This dent constitutes a mortar-shaped reflector 30 that extends from the bottom surface to the opening, and the reflector 30 includes an inclined portion 30A that forms a light reflecting surface and an element mounting portion 30B on which the LED element 2 is mounted. The LED element 2 is bonded and fixed to the Cu wiring layer 300A of the element mounting portion 30B by an adhesive such as Ag paste, and the n-side electrode and the p-side electrode correspond to the element mounting portion 30B via the wire 4. It is connected to the Cu wiring layers 300A and 300B.

封止樹脂５は、エポキシ樹脂からなり、リフレクタ部３０の開口部から素子搭載部３０Ｂにかけてを封止している。この封止樹脂５についてもエポキシ樹脂以外にシリコン樹脂を用いても良く、青色光によって励起される蛍光体を含有させることも可能である。   The sealing resin 5 is made of an epoxy resin and seals from the opening of the reflector portion 30 to the element mounting portion 30B. Also for the sealing resin 5, a silicon resin may be used in addition to the epoxy resin, and it is possible to contain a phosphor excited by blue light.

図２（ａ）から（ｄ）は、第１の実施の形態の発光装置の製造プロセスを示す工程図である。以下に、発光装置１の製造プロセスについて説明する。   2A to 2D are process diagrams showing a manufacturing process of the light emitting device according to the first embodiment. Below, the manufacturing process of the light-emitting device 1 is demonstrated.

（基板準備工程）
図２（ａ）は、基板準備工程を示す。絶縁層３０１を介して表面にＣｕ配線層３００Ａ、３００Ｂを設けられたＣｕ基板３を用意し、エッチング等の配線パターン形成加工を行ってＬＥＤ素子の実装に応じた配線パターンを形成する。なお、別工程で予め配線パターンを形成したＣｕ基板３を用いても良い。 (Board preparation process)
FIG. 2A shows a substrate preparation process. A Cu substrate 3 having Cu wiring layers 300A and 300B provided on the surface via an insulating layer 301 is prepared, and wiring pattern formation processing such as etching is performed to form a wiring pattern according to the mounting of the LED element. In addition, you may use Cu board | substrate 3 which formed the wiring pattern previously at another process.

（プレス加工工程）
図２（ｂ）は、プレス加工工程を示す。基板準備工程で配線パターンの形成されたＣｕ基板３に対し、Ｃｕ配線層３００Ａ、３００Ｂ側から図示しないプレス加工機でプレス加工を施すことによりリフレクタ部３０を形成し、Ｃｕ配線層３００Ａ、３００ＢにＡｇめっきを施す。 (Pressing process)
FIG. 2B shows the pressing process. The reflector part 30 is formed by pressing the Cu substrate 3 on which the wiring pattern is formed in the substrate preparation process from a Cu wiring layer 300A, 300B side with a press machine (not shown), and the Cu wiring layers 300A, 300B are formed on the Cu wiring layer 300A, 300B. Ag plating is applied.

（ＬＥＤ素子搭載工程）
図２（ｃ）は、ＬＥＤ素子搭載工程を示す。Ａｇめっきの施されたＣｕ配線層３００Ａ上にＬＥＤ素子２をＡｇペーストで接着固定し、ｎ側電極とＣｕ配線層３００Ａ、ｐ側電極とＣｕ配線層３００Ｂとをワイヤ４で電気的に接続する。 (LED element mounting process)
FIG. 2C shows an LED element mounting process. The LED element 2 is bonded and fixed on the Cu wiring layer 300A subjected to Ag plating with Ag paste, and the n-side electrode and the Cu wiring layer 300A and the p-side electrode and the Cu wiring layer 300B are electrically connected by the wire 4. .

（樹脂封止工程）
図２（ｄ）は、樹脂封止工程を示す。リフレクタ部３０にエポキシ樹脂を注入して素子搭載部３０Ｂからリフレクタ部３０の開口部にかけてを封止する。 (Resin sealing process)
FIG. 2D shows a resin sealing process. An epoxy resin is injected into the reflector part 30 to seal from the element mounting part 30 </ b> B to the opening part of the reflector part 30.

（第１の実施の形態の効果）
上記した第１の実施の形態によると、以下の効果が得られる。
（１）放熱性の良好なＣｕからなるＣｕ基板３に絶縁層３０１を介してＣｕ配線層３００Ａ、３００Ｂを設け、プレス加工によってリフレクタ部３０を形成しているので、良好な光反射性を有する。また、ＬＥＤ素子２の発熱に伴う熱をＣｕ基板３を介して速やかに放熱することができ、発光装置１の高出力化、大光量化に伴う発熱量増大に余裕をもって対応することができる。
（２）基板材料が入手の容易な金属で構成され、かつ安価であることにより発光装置１のコストアップを抑えることができる。また、板状の基板から複数のＬＥＤ素子２を同時に製造することが可能であるので、量産性に優れる。
（３）封止樹脂５とＣｕ配線層３００Ａ、３００Ｂとが界面接合する構成を有するので、熱膨張差に基づく封止樹脂５の剥離を生じにくくなり、パッケージの信頼性が向上する。 (Effects of the first embodiment)
According to the first embodiment described above, the following effects are obtained.
(1) Since the Cu wiring layers 300A and 300B are provided on the Cu substrate 3 made of Cu with good heat dissipation via the insulating layer 301, and the reflector portion 30 is formed by pressing, it has good light reflectivity. . Moreover, the heat accompanying the heat generation of the LED element 2 can be quickly dissipated through the Cu substrate 3, and it is possible to cope with an increase in the amount of heat generated due to the high output and large light quantity of the light emitting device 1.
(2) Since the substrate material is made of an easily available metal and is inexpensive, an increase in cost of the light emitting device 1 can be suppressed. Moreover, since it is possible to manufacture several LED element 2 simultaneously from a plate-shaped board | substrate, it is excellent in mass-productivity.
(3) Since the sealing resin 5 and the Cu wiring layers 300 </ b> A and 300 </ b> B have a configuration in which the sealing resin 5 and the Cu wiring layers 300 </ b> A and 300 </ b> B are bonded, peeling of the sealing resin 5 based on the difference in thermal expansion is unlikely to occur and the package reliability is improved.

なお、第１の実施の形態では、フェイスアップ型のＬＥＤ素子２を搭載した発光装置１を説明したが、これに限定されず、サファイア基板側を光取り出し側とするフリップチップ型のＬＥＤ素子２を用いても良い。この場合、ＬＥＤ素子２の底面と素子搭載部３０Ｂとの間に気泡を生じないようにフィラーを充填することが好ましい。   In the first embodiment, the light-emitting device 1 on which the face-up type LED element 2 is mounted has been described. However, the present invention is not limited to this, and the flip-chip type LED element 2 having the sapphire substrate side as the light extraction side. May be used. In this case, it is preferable to fill the filler so as not to generate bubbles between the bottom surface of the LED element 2 and the element mounting portion 30B.

また、ＬＥＤ素子２の発光色についても青色に限定されず、赤色光、緑色光、又は紫外光を発するＬＥＤ素子２を用いても良い。   Further, the emission color of the LED element 2 is not limited to blue, and the LED element 2 that emits red light, green light, or ultraviolet light may be used.

（第２の実施の形態）
図３は、本発明の第２の実施の形態に係る発光装置の中央部における断面図である。以下の説明では、第１の実施の形態と同じ構成および機能を有する部分については共通する引用数字を付している。 (Second Embodiment)
FIG. 3 is a cross-sectional view of the central portion of the light emitting device according to the second embodiment of the present invention. In the following description, common reference numerals are given to portions having the same configuration and function as those of the first embodiment.

この発光装置１は、第１の実施の形態で説明した封止樹脂５に代えて、蛍光体を含有した蛍光体含有封止樹脂５Ａをリフレクタ部３０に注入しており、そのことによって素子搭載部３０Ｂからリフレクタ部３０の開口部にかけてを封止している構成において第１の実施の形態と相違している。   In this light emitting device 1, instead of the sealing resin 5 described in the first embodiment, a phosphor-containing sealing resin 5A containing a phosphor is injected into the reflector portion 30, thereby mounting the element. The configuration in which the portion from the portion 30B to the opening of the reflector portion 30 is sealed is different from that of the first embodiment.

蛍光体含有封止樹脂５Ａは、ＬＥＤ素子２から放射される青色光の照射に基づいて励起されて黄色光を発する蛍光体であるＹＡＧ(Yttrium Aluminum Garnet)をエポキシ樹脂に混合することによって形成されており、青色光と黄色光とを混合することで補色の関係によって白色光を生じる。   The phosphor-containing sealing resin 5A is formed by mixing YAG (Yttrium Aluminum Garnet), which is a phosphor that emits yellow light when excited by the irradiation of blue light emitted from the LED element 2, with an epoxy resin. By mixing blue light and yellow light, white light is generated by the complementary color relationship.

（第２の実施の形態の効果）
上記した第２の実施の形態によると、第１の実施の形態の好ましい効果に加えて、蛍光体含有封止樹脂５ＡによってＬＥＤ素子２を含むリフレクタ部３０を封止することにより青色ＬＥＤ素子２を用いた波長変換型の発光装置１を形成することができる。 (Effect of the second embodiment)
According to the second embodiment described above, in addition to the preferable effects of the first embodiment, the blue LED element 2 is sealed by sealing the reflector part 30 including the LED element 2 with the phosphor-containing sealing resin 5A. The wavelength conversion type light-emitting device 1 using can be formed.

このような白色型の発光装置１では、近年では照明、ランプ等の光源用途として需要が高まっており、大光量であることが望ましいが、大光量化に伴う発熱による封止樹脂の劣化、ＬＥＤ素子２の寿命低下が問題となっている。これに対して熱伝導性に優れるＣｕ基板３を用いているので、良好な放熱性が確保されて大光量化に対応することができる。   In such a white light emitting device 1, in recent years, the demand for light sources such as lighting and lamps is increasing, and it is desirable that the light intensity is large. There is a problem that the lifetime of the element 2 is reduced. On the other hand, since the Cu substrate 3 having excellent thermal conductivity is used, good heat dissipation is ensured and it is possible to cope with an increase in the amount of light.

（第３の実施の形態）
図４は、本発明の第３の実施の形態に係る発光装置の中央部における断面図である。 (Third embodiment)
FIG. 4 is a cross-sectional view of the central portion of the light emitting device according to the third embodiment of the present invention.

この発光装置１は、第１の実施の形態で説明した素子搭載部３０ＢにおけるＣｕ配線層３００Ａ、３００Ｂ、絶縁層３０１を部分的に除去してＣｕ基板３を露出させており、露出させたＣｕ基板３の表面にＬＥＤ素子２を接着固定した構成において第１の実施の形態と相違している。なお、Ｃｕ配線層３００Ａ、３００Ｂおよび素子搭載部３０ＢにおけるＣｕ基板３の露出部にはＡｇめっきが施されている。   In the light emitting device 1, the Cu wiring layers 300A and 300B and the insulating layer 301 in the element mounting portion 30B described in the first embodiment are partially removed to expose the Cu substrate 3, and the exposed Cu is exposed. The configuration in which the LED element 2 is bonded and fixed to the surface of the substrate 3 is different from that of the first embodiment. Note that Ag plating is applied to exposed portions of the Cu substrate 3 in the Cu wiring layers 300A and 300B and the element mounting portion 30B.

（第３の実施の形態の効果）
上記した第３の実施の形態によると、第１の実施の形態の好ましい効果に加えて、ＬＥＤ素子２の発光に基づいて生じる発熱をＣｕ基板３に速やかに熱伝導させることができ、放熱性を向上させることができる。 (Effect of the third embodiment)
According to the third embodiment described above, in addition to the preferable effects of the first embodiment, the heat generated based on the light emission of the LED element 2 can be quickly conducted to the Cu substrate 3, and the heat dissipation performance can be improved. Can be improved.

（第４の実施の形態）
図５は、本発明の第４の実施の形態に係る発光装置を示し、（ａ）は発光装置の中央部における断面図、（ｂ）は発光装置の平面図である。 (Fourth embodiment)
5A and 5B show a light emitting device according to a fourth embodiment of the present invention, in which FIG. 5A is a cross-sectional view at the center of the light emitting device, and FIG. 5B is a plan view of the light emitting device.

この発光装置１は、第１の実施の形態で説明したＣｕ基板３の側面にＳｉＯ２からなる絶縁部３Ａと、絶縁部３Ａの外側に設けられるタングステン（Ｗ）からなる導電部３Ｂと、絶縁部３Ａによって導電部３Ｂと絶縁された放熱部３００とを設けて側面配線型のパッケージ構造とした構成において第１の実施の形態と相違している。 The light emitting device 1 includes an insulating portion 3A made of SiO 2 on the side surface of the Cu substrate 3 described in the first embodiment, a conductive portion 3B made of tungsten (W) provided outside the insulating portion 3A, and an insulating portion. The configuration of the side wiring type package structure by providing the heat radiating portion 300 insulated from the conductive portion 3B by the portion 3A is different from that of the first embodiment.

絶縁部３Ａおよび導電部３Ｂは、図５（ｂ）に示すように、Ｃｕ基板３の短辺に平行な方向に形成されており、導電部３ＢはＣｕ配線層３００Ａ、３００Ｂに電気的に接続されている。   As shown in FIG. 5B, the insulating portion 3A and the conductive portion 3B are formed in a direction parallel to the short side of the Cu substrate 3, and the conductive portion 3B is electrically connected to the Cu wiring layers 300A and 300B. Has been.

図６（ａ）から（ｄ）は、第４の実施の形態の発光装置の製造プロセス（絶縁部形成まで）を示す工程図である。なお、図６（ａ）の基板準備工程および図６（ｂ）のプレス加工工程については第１の実施の形態と同様であるので、図６（ｃ）以降について説明する。   FIGS. 6A to 6D are process diagrams showing a manufacturing process (up to formation of an insulating portion) of the light emitting device according to the fourth embodiment. Since the substrate preparation process in FIG. 6A and the press working process in FIG. 6B are the same as those in the first embodiment, FIG. 6C and subsequent drawings will be described.

（エッチング工程）
図６（ｃ）は、エッチング工程を示す。Ｃｕ基板３の側部近傍に底面側からＣｕ配線層３００Ａ、３００Ｂにかけてエッチングを施すことによって溝３Ｃを形成する。この溝３ＣはＣｕ基板３の短辺に平行な溝形状を有している。 (Etching process)
FIG. 6C shows an etching process. A groove 3C is formed in the vicinity of the side portion of the Cu substrate 3 by etching from the bottom surface side to the Cu wiring layers 300A and 300B. The groove 3 </ b> C has a groove shape parallel to the short side of the Cu substrate 3.

（絶縁部形成工程）
図６（ｄ）は、絶縁部形成工程を示す。エッチング工程で形成された溝３ＣにＳｉＯ２を薄膜状に付着させることによって溝３Ｃの壁面を覆うように絶縁部３Ａを設ける。このとき、Ｃｕ配線層３００Ａ、３００Ｂが絶縁部３Ａによって覆われるが、Ｃｕ基板３との絶縁を損なわないようＣｕ配線層３００Ａ、３００Ｂを絶縁部３Ａから露出させておく。 (Insulating part forming process)
FIG. 6D shows an insulating portion forming step. An insulating portion 3A is provided so as to cover the wall surface of the groove 3C by attaching SiO 2 in a thin film shape to the groove 3C formed in the etching process. At this time, the Cu wiring layers 300A and 300B are covered with the insulating portion 3A, but the Cu wiring layers 300A and 300B are exposed from the insulating portion 3A so as not to impair the insulation with the Cu substrate 3.

図７（ａ）から（ｄ）は、第４の実施の形態の発光装置の製造プロセス（導電部形成から完成まで）を示す工程図である。   7A to 7D are process diagrams showing a manufacturing process (from formation of a conductive portion to completion) of the light emitting device according to the fourth embodiment.

（導電部形成工程）
図７（ａ）は、導電部形成工程を示す。絶縁部形成工程で絶縁部３Ａを形成された溝３ＣにＷペーストを塗布し、熱処理を施すことによって導電部３Ｂを形成する。この導電部３Ｂは、Ｃｕ配線層３００Ａ、３００Ｂと電気的に接続されるとともにＣｕ基板３の底面に露出する。 (Conductive part formation process)
FIG. 7A shows a conductive part forming step. The conductive part 3B is formed by applying W paste to the groove 3C in which the insulating part 3A has been formed in the insulating part forming step and applying heat treatment. The conductive portion 3B is electrically connected to the Cu wiring layers 300A and 300B and exposed on the bottom surface of the Cu substrate 3.

（ＬＥＤ素子搭載工程）
図７（ｂ）は、ＬＥＤ素子搭載工程を示す。Ａｇめっきの施されたＣｕ配線層３００Ａ上にＬＥＤ素子２をＡｇペーストで接着固定し、ｎ側電極とＣｕ配線層３００Ａ、ｐ側電極とＣｕ配線層３００Ｂとをワイヤ４で電気的に接続する。 (LED element mounting process)
FIG. 7B shows an LED element mounting process. The LED element 2 is bonded and fixed on the Cu wiring layer 300A subjected to Ag plating with Ag paste, and the n-side electrode and the Cu wiring layer 300A and the p-side electrode and the Cu wiring layer 300B are electrically connected by the wire 4. .

（樹脂封止工程）
図７（ｃ）は、樹脂封止工程を示す。リフレクタ部３０にエポキシ樹脂を注入して素子搭載部３０Ｂからリフレクタ部３０の開口部にかけてを封止する。 (Resin sealing process)
FIG. 7C shows a resin sealing process. An epoxy resin is injected into the reflector part 30 to seal from the element mounting part 30 </ b> B to the opening part of the reflector part 30.

（導電部露出工程）
図７（ｄ）は、導電部露出工程を示す。導電部露出工程では、溝３Ｃの部分をダイサーでカットすることにより導電部３ＢがＣｕ基板３の外側に露出させる。なお、ダイサーでカットする代わりにＣｕ基板３を切削によって側面に導電部３Ｂを露出させるようにしても良い。 (Conducting part exposure process)
FIG. 7D shows a conductive part exposure step. In the conductive portion exposing step, the conductive portion 3B is exposed to the outside of the Cu substrate 3 by cutting the groove 3C with a dicer. Instead of cutting with a dicer, the conductive portion 3B may be exposed on the side surface by cutting the Cu substrate 3.

（第４の実施の形態の効果）
上記した第４の実施の形態によると、第１の実施の形態の好ましい効果に加えて、導電性を有する金属基板の側面にＬＥＤ素子２への給電用の導電部３Ｂを形成できることにより、Ｃｕ基板３の上面だけでなく側面からの給電が可能になる。また、Ｃｕ基板３の底面を実装面としてＬＥＤ素子２を実装できることから、放熱部３００から実装基板に対して優れた放熱性が得られる。 (Effect of the fourth embodiment)
According to the above-described fourth embodiment, in addition to the preferable effects of the first embodiment, the conductive portion 3B for feeding power to the LED element 2 can be formed on the side surface of the conductive metal substrate, whereby Cu Power can be supplied not only from the top surface of the substrate 3 but also from the side surfaces. Moreover, since the LED element 2 can be mounted using the bottom surface of the Cu substrate 3 as a mounting surface, excellent heat dissipation from the heat dissipation portion 300 to the mounting substrate can be obtained.

（第５の実施の形態）
図８は、本発明の第５の実施の形態に係る発光装置の断面図である。 (Fifth embodiment)
FIG. 8 is a cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.

この発光装置１は、第４の実施の形態で説明した側面に導電部３Ｂを有する構造に加えてＣｕ基板３の底面に絶縁層３０１を介して底面導電部３Ｄを設けた構成において第４の実施の形態と相違している。   The light emitting device 1 has a structure in which the bottom surface conductive portion 3D is provided on the bottom surface of the Cu substrate 3 via the insulating layer 301 in addition to the structure having the conductive portion 3B on the side surface described in the fourth embodiment. This is different from the embodiment.

Ｃｕ基板３は、表面だけでなく底面にも絶縁層３０１を有しており、このＣｕ基板３に対して第４の実施の形態で説明した絶縁部３Ａおよび導電部３Ｂの形成を行い、さらに底面に導電部３Ｂと電気的に接続される底面導電部３Ｄをスパッタリングによって形成している。   The Cu substrate 3 has the insulating layer 301 not only on the surface but also on the bottom surface, and the insulating portion 3A and the conductive portion 3B described in the fourth embodiment are formed on the Cu substrate 3, and further A bottom surface conductive portion 3D electrically connected to the conductive portion 3B is formed on the bottom surface by sputtering.

（第５の実施の形態の効果）
上記した第５の実施の形態によると、第４の実施の形態の好ましい効果に加えて、Ｃｕ基板３の底面に設けられる導電性を有する金属基板の側面にＬＥＤ素子２への給電用の導電部３Ｂを形成できることから、優れた表面実装性を付与することができる。また、電気的接続部の面積を大にできるので、ＬＥＤ素子２に対して安定した給電を行うことができる。 (Effect of 5th Embodiment)
According to the fifth embodiment described above, in addition to the preferable effects of the fourth embodiment, the conductive material for supplying power to the LED element 2 on the side surface of the conductive metal substrate provided on the bottom surface of the Cu substrate 3. Since the part 3B can be formed, excellent surface mountability can be imparted. Moreover, since the area of the electrical connection portion can be increased, stable power feeding can be performed to the LED element 2.

（第６の実施の形態）
図９は、本発明の第６の実施の形態に係る発光装置を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）のＡ−Ａ部における断面図である。 (Sixth embodiment)
9A and 9B show a light emitting device according to a sixth embodiment of the present invention. FIG. 9A is a plan view of the light emitting device, and FIG. 9B is a cross-sectional view taken along the line AA of FIG.

この発光装置１は、Ｃｕ基板３にエッチングによって形成される溝３Ｃと、溝３Ｃの内部にＳｉＯ２によって形成される絶縁部３Ａと、絶縁部３Ａの外側のＣｕ基板３に底面からＣｕ配線層３００Ａ、３００Ｂにかけて形成されるスルーホール３Ｅと、スルーホール３Ｅ内にＷによって形成される導電部３Ｂと、Ｃｕ基板３の底面において導電部３Ｂと電気的に接続される底面導電部３Ｄとを有し、絶縁部３Ａは、Ｃｕ基板３の底面より僅かに突出した突起部３０２を設けられている。 The light emitting device 1 includes a groove 3C formed by etching on a Cu substrate 3, an insulating portion 3A formed of SiO 2 inside the groove 3C, and a Cu wiring layer on the Cu substrate 3 outside the insulating portion 3A from the bottom surface. The through hole 3E formed over 300A and 300B, the conductive part 3B formed by W in the through hole 3E, and the bottom surface conductive part 3D electrically connected to the conductive part 3B on the bottom surface of the Cu substrate 3 are provided. The insulating portion 3 </ b> A is provided with a protrusion 302 that slightly protrudes from the bottom surface of the Cu substrate 3.

（第６の実施の形態の効果）
上記した第６の実施の形態によると、Ｃｕ基板３の底面から絶縁層３０１にかけて溝３Ｃを形成することにより、溝３Ｃの両側で絶縁された領域を形成することができる。このため、Ｃｕ基板３の中央部分を放熱部３００とし、溝３Ｃの外側の領域を導電領域として使用できるので、実装時の自由度に優れる。 (Effect of 6th Embodiment)
According to the sixth embodiment described above, by forming the groove 3C from the bottom surface of the Cu substrate 3 to the insulating layer 301, regions insulated on both sides of the groove 3C can be formed. For this reason, since the center part of the Cu substrate 3 can be used as the heat radiating portion 300 and the region outside the groove 3C can be used as the conductive region, the flexibility in mounting is excellent.

（第７の実施の形態）
図１０は、本発明の第７の実施の形態に係る発光装置を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）のＢ−Ｂ部における断面図である。 (Seventh embodiment)
10A and 10B show a light emitting device according to a seventh embodiment of the present invention, in which FIG. 10A is a plan view of the light emitting device, and FIG. 10B is a cross-sectional view taken along line BB in FIG.

この発光装置１は、リフレクタ部３０の外側にワイヤ４を接続するためのボンディングエリア３０３を設け、そのことによってリフレクタ部３０の小サイズ化を図った構成において第３の実施の形態と相違している。   The light emitting device 1 is provided with a bonding area 303 for connecting the wire 4 outside the reflector unit 30, thereby reducing the size of the reflector unit 30 and is different from the third embodiment. Yes.

ボンディングエリア３０３は、図１０（ｂ）に示すように素子搭載部３０Ｂの設けられる深さより浅い位置にプレス加工によって設けられており、そのことによってＬＥＤ素子２とリフレクタ部３０の傾斜部３０Ａとを近接させて素子上方への反射性を高めている。   The bonding area 303 is provided by pressing at a position shallower than the depth at which the element mounting portion 30B is provided as shown in FIG. 10 (b), whereby the LED element 2 and the inclined portion 30A of the reflector portion 30 are connected. It is made close to each other to improve the reflectivity upward of the element.

（第７の実施の形態の効果）
上記した第７の実施の形態によると、素子搭載部３０Ｂの外側にワイヤ４を接続するボンディングエリア３０３を設けたので、素子搭載部３０Ｂの面積を小にでき、パッケージサイズの小なる発光装置１を形成することができる、また、ボンディングエリア３０３を素子搭載部３０Ｂより浅い位置に形成することにより、傾斜部３０Ａによる光反射性を損なうことなく良好なワイヤ接続性を確保することができる。 (Effect of 7th Embodiment)
According to the seventh embodiment described above, since the bonding area 303 for connecting the wire 4 is provided outside the element mounting portion 30B, the area of the element mounting portion 30B can be reduced, and the light emitting device 1 having a small package size. Further, by forming the bonding area 303 at a position shallower than the element mounting portion 30B, good wire connectivity can be ensured without impairing the light reflectivity by the inclined portion 30A.

（第８の実施の形態）
図１１は、本発明の第８の実施の形態に係る発光装置の断面図である。 (Eighth embodiment)
FIG. 11 is a cross-sectional view of a light emitting device according to an eighth embodiment of the present invention.

この発光装置１は、第１の実施の形態で説明した発光装置１のＣｕ配線層３００Ａ、３００Ｂの表面にＣｕからなるリードフレーム６を半田により接合したものである。なお、リードフレーム６を用いる代わりにフレキシブル基板等の配線を接合しても良い。また、接合方法についても半田に代わるものであっても良く、導電性フィラーを含有させた接着剤や、Ａｇペースト等の導電性接着剤であっても良い。   In the light emitting device 1, a lead frame 6 made of Cu is joined to the surface of the Cu wiring layers 300A and 300B of the light emitting device 1 described in the first embodiment by soldering. Instead of using the lead frame 6, wiring such as a flexible substrate may be joined. Also, the bonding method may be a substitute for solder, or may be an adhesive containing a conductive filler, or a conductive adhesive such as an Ag paste.

（第８の実施の形態の効果）
上記した第８の実施の形態によると、Ｃｕ配線層３００Ａ、３００Ｂの表面にリードフレーム６を設けたことにより、実装性の向上を図ることができるとともにＣｕ基板３だけでなくリードフレーム６からも放熱させることができ、より放熱性を向上させることができる。 (Effect of 8th Embodiment)
According to the eighth embodiment described above, by providing the lead frame 6 on the surface of the Cu wiring layers 300A and 300B, the mountability can be improved and the lead frame 6 as well as the Cu substrate 3 can be improved. The heat can be dissipated and the heat dissipation can be further improved.

（第９の実施の形態）
図１２は、本発明の第９の実施の形態に係る発光装置の断面図である。 (Ninth embodiment)
FIG. 12 is a sectional view of a light emitting device according to the ninth embodiment of the present invention.

この発光装置１は、第８の実施の形態で説明したリードフレーム６を有する発光装置１に光透過性樹脂材料で形成されたレンズ７を搭載し、リードフレーム６、レンズ７、およびＣｕ基板３とをエポキシ樹脂からなる封止樹脂５で一体的に封止した構成を有する。   In the light emitting device 1, a lens 7 formed of a light-transmitting resin material is mounted on the light emitting device 1 having the lead frame 6 described in the eighth embodiment, and the lead frame 6, the lens 7, and the Cu substrate 3 are mounted. Are integrally sealed with a sealing resin 5 made of an epoxy resin.

Ｃｕ基板３は、底面を半田８によって実装基板９に固定されており、ＬＥＤ素子２の発光に基づいて生じる発熱を実装基板９に放熱する。なお、Ｃｕ基板３の底面は、半田を   The Cu substrate 3 has a bottom surface fixed to the mounting substrate 9 with solder 8, and radiates heat generated based on light emission of the LED element 2 to the mounting substrate 9. The bottom surface of the Cu substrate 3 is soldered.

リードフレーム６は、第８の実施の形態で説明したようにＣｕ配線層３００Ａ、３００Ｂの表面に接続されるとともに折り曲げられて実装基板９に半田８によって固定されている。   As described in the eighth embodiment, the lead frame 6 is connected to the surface of the Cu wiring layers 300A and 300B, bent, and fixed to the mounting substrate 9 with the solder 8.

レンズ７は、ＬＥＤ素子２を覆う封止樹脂５と同一のエポキシ樹脂によって形成されて半球状の光学形状面を有しており、リフレクタ部３０で反射された光を所望の照射範囲に集光する。なお、レンズ７は上記したエポキシ樹脂によるもの以外に、例えば、ガラス材料によって形成されたものであっても良い。   The lens 7 is formed of the same epoxy resin as the sealing resin 5 that covers the LED element 2 and has a hemispherical optical shape surface, and condenses the light reflected by the reflector unit 30 in a desired irradiation range. To do. The lens 7 may be formed of, for example, a glass material in addition to the above-described epoxy resin.

（第９の実施の形態の効果）
上記した第９の実施の形態によると、第８の実施の形態の発光装置１の好ましい効果に加えて集光光学系を一体的に設けているので、大光量の光を集光しビーム状の光として所望の方向に照射させることができる。また、ＬＥＤ素子２を大電流で駆動しても実装基板９に半田８を介して放熱部３００が固定されているので、発光に伴う発熱を実装基板９に速やかに伝熱させることができ、光量変化や信頼性に優れる発光装置１が得られる。 (Effect of 9th Embodiment)
According to the above-described ninth embodiment, in addition to the preferable effect of the light-emitting device 1 of the eighth embodiment, the condensing optical system is integrally provided, so that a large amount of light is condensed to form a beam shape. The light can be irradiated in a desired direction. In addition, even if the LED element 2 is driven with a large current, since the heat dissipation part 300 is fixed to the mounting substrate 9 via the solder 8, heat generated due to light emission can be quickly transferred to the mounting substrate 9, The light emitting device 1 having excellent light quantity change and reliability can be obtained.

なお、第９の実施の形態では、ビーム状の光を照射する集光光学系としてのレンズ７を設けた構成を説明したが、拡散光学系としてのレンズを設けても良い。   In the ninth embodiment, the configuration in which the lens 7 is provided as a condensing optical system for irradiating beam-like light has been described. However, a lens as a diffusion optical system may be provided.

（第１０の実施の形態）
図１３は、本発明の第１０の実施の形態に係る発光装置の断面図である。 (Tenth embodiment)
FIG. 13 is a cross-sectional view of the light emitting device according to the tenth embodiment of the invention.

この発光装置１は、第８の実施の形態で説明したリードフレーム６を有する発光装置１にレンズ状の光学形状面５Ａを有するようにエポキシ樹脂からなる封止樹脂５でＣｕ基板３と、リードフレーム６とを一体的に封止した構成を有する。   This light-emitting device 1 includes a Cu substrate 3 and a lead made of a sealing resin 5 made of an epoxy resin so that the light-emitting device 1 having the lead frame 6 described in the eighth embodiment has a lens-like optical shape surface 5A. The frame 6 is integrally sealed.

（第１０の実施の形態の効果）
上記した第１０の実施の形態によると、第９の実施の形態の発光装置１の好ましい効果に加えて別部材のレンズを用いなくとも集光光学系を一体的に設けることが可能になり、コストダウンを図ることができる。また、封止樹脂５がＣｕ基板３の表面から底面近傍までを広範囲に覆うので、パッケージの水密性が向上し、信頼性の向上を図ることができる。 (Effect of 10th Embodiment)
According to the tenth embodiment described above, in addition to the preferable effects of the light emitting device 1 of the ninth embodiment, it is possible to integrally provide a condensing optical system without using a separate member lens, Cost can be reduced. Further, since the sealing resin 5 covers a wide range from the surface of the Cu substrate 3 to the vicinity of the bottom surface, the water tightness of the package is improved and the reliability can be improved.

（第１１の実施の形態）
図１４は、本発明の第１１の実施の形態に係る発光装置の断面図である。 (Eleventh embodiment)
FIG. 14 is a cross-sectional view of a light emitting device according to an eleventh embodiment of the present invention.

この発光装置１は、第４の実施の形態で説明した導電部３ＢをＣｕ基板３の側面に有する発光装置１にレンズ７を搭載し、エポキシ樹脂からなる封止樹脂５で一体的に固定したものである。レンズ７については第９の実施の形態で説明したものと同一である。   In this light emitting device 1, a lens 7 is mounted on the light emitting device 1 having the conductive portion 3B described in the fourth embodiment on the side surface of the Cu substrate 3, and is fixed integrally with a sealing resin 5 made of an epoxy resin. Is. The lens 7 is the same as that described in the ninth embodiment.

Ｃｕ基板３は、導電部３Ｂが半田８によって実装基板９に固定されており、底面についても半田８によって実装基板９に固定されて放熱性を確保している。   In the Cu substrate 3, the conductive portion 3 </ b> B is fixed to the mounting substrate 9 by the solder 8, and the bottom surface is also fixed to the mounting substrate 9 by the solder 8 to ensure heat dissipation.

（第１１の実施の形態の効果）
上記した第１１の実施の形態によると、第４の実施の形態の発光装置１の好ましい効果に加えて、導電部３Ｂにおける底面から側面にかけての半田８による電気的接続が可能となるので、優れた実装性を付与することができる。また、集光光学系であるレンズ７を搭載することによって所望の照射位置にビーム状の光を照射することが可能になる。 (Effect of 11th Embodiment)
According to the eleventh embodiment described above, in addition to the preferable effect of the light emitting device 1 of the fourth embodiment, electrical connection by the solder 8 from the bottom surface to the side surface in the conductive portion 3B becomes possible, which is excellent. The mountability can be given. Moreover, it becomes possible to irradiate a desired irradiation position with beam-like light by mounting the lens 7 which is a condensing optical system.

図１５は、本発明の第１２の実施の形態に係る発光装置の断面図である。   FIG. 15 is a cross-sectional view of a light emitting device according to a twelfth embodiment of the present invention.

この発光装置１は、第５の実施の形態で説明した底面導電部３Ｄを有する発光装置１にレンズ状の光学形状面５Ａを有するようにエポキシ樹脂からなる封止樹脂５でＣｕ基板３を封止した構成を有する。   In this light emitting device 1, the Cu substrate 3 is sealed with a sealing resin 5 made of an epoxy resin so as to have a lens-like optical shape surface 5A on the light emitting device 1 having the bottom surface conductive portion 3D described in the fifth embodiment. It has a stopped configuration.

（第１２の実施の形態の効果）
上記した第１２の実施の形態によると、第５の実施の形態の発光装置１の好ましい効果に加えて、集光性を付与された発光装置１の実装性が向上する。また、電気的接続部の面積を大にできるので、ＬＥＤ素子２に対して安定した給電を行うことができる。 (Effect of 12th Embodiment)
According to the twelfth embodiment described above, in addition to the preferable effects of the light-emitting device 1 of the fifth embodiment, the mountability of the light-emitting device 1 imparted with the light collecting property is improved. Moreover, since the area of the electrical connection portion can be increased, stable power feeding can be performed to the LED element 2.

図１６は、本発明の第１３の実施の形態に係るＬＥＤランプを示し、（ａ）はＬＥＤランプの平面図、（ｂ）はＬＥＤランプの側面図である。   FIG. 16 shows an LED lamp according to a thirteenth embodiment of the present invention, wherein (a) is a plan view of the LED lamp and (b) is a side view of the LED lamp.

このＬＥＤランプ１０は、第１の実施の形態で説明した発光装置１を５個×５列で配置して構成されており、各発光装置１はポリイミドの表面に銅箔による配線パターンを設けたフレキシブル基板１１の配線パターン形成面１１１に電気的に接続されている。また、各発光装置１は、底面側に設けられるＣｕからなる放熱板１２に半田によって固定されており、ＬＥＤ素子２の発光に基づいて生じる発熱を速やかに放熱する。   This LED lamp 10 is configured by arranging the light emitting devices 1 described in the first embodiment in 5 × 5 rows, and each light emitting device 1 is provided with a wiring pattern made of copper foil on the surface of polyimide. It is electrically connected to the wiring pattern forming surface 111 of the flexible substrate 11. Each light emitting device 1 is fixed to a heat radiating plate 12 made of Cu provided on the bottom surface side by solder, and quickly radiates heat generated based on light emission of the LED element 2.

フレキシブル基板１１は、発光装置１の発光に基づく光を放射させる開口部として矩形状の窓１１０を有している。   The flexible substrate 11 has a rectangular window 110 as an opening for emitting light based on light emission of the light emitting device 1.

（第１３の実施の形態の効果）
上記した第１３の実施の形態によると、第１の実施の形態で説明したＣｕ基板にＬＥＤ素子２を搭載した発光装置１を用いることにより、複数光源型のＬＥＤランプとしながらも装置コストを安価にすることができる。また、ＬＥＤ素子２の発光に伴う発熱をＣｕ基板に伝熱し、さらに放熱板１２へ放熱できるため、大光量化、高出力化に余裕をもって対応することが可能となる。 (Effect of 13th Embodiment)
According to the thirteenth embodiment described above, by using the light emitting device 1 in which the LED element 2 is mounted on the Cu substrate described in the first embodiment, the device cost can be reduced while using a multiple light source type LED lamp. Can be. Moreover, since heat generated by the light emission of the LED element 2 can be transferred to the Cu substrate and further radiated to the heat radiating plate 12, it is possible to cope with a large amount of light and high output with a margin.

なお、放熱板１２はＣｕ以外に、例えば、Ａｌ等の熱伝導性に優れる他の材料で形成しても良い。また、放熱性を高めるために粗面化加工等の表面加工が施されたものであっても良い。   Note that the heat radiating plate 12 may be formed of another material having excellent thermal conductivity, such as Al, in addition to Cu. Moreover, in order to improve heat dissipation, surface processing, such as roughening processing, may be given.

本発明の第１の実施の形態に係る発光装置を示し、（ａ）は発光装置の中央部における断面図、（ｂ）は発光装置の平面図である。The light-emitting device which concerns on the 1st Embodiment of this invention is shown, (a) is sectional drawing in the center part of a light-emitting device, (b) is a top view of a light-emitting device. （ａ）から（ｄ）は、第１の実施の形態の発光装置の製造プロセスを示す工程図である。FIGS. 4A to 4D are process diagrams illustrating a manufacturing process of the light emitting device according to the first embodiment. 本発明の第２の実施の形態に係る発光装置の中央部における断面図である。It is sectional drawing in the center part of the light-emitting device which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施の形態に係る発光装置の中央部における断面図である。It is sectional drawing in the center part of the light-emitting device which concerns on the 3rd Embodiment of this invention. 本発明の第４の実施の形態に係る発光装置を示し、（ａ）は発光装置の中央部における断面図、（ｂ）は発光装置の平面図である。The light-emitting device which concerns on the 4th Embodiment of this invention is shown, (a) is sectional drawing in the center part of a light-emitting device, (b) is a top view of a light-emitting device. （ａ）から（ｄ）は、第４の実施の形態の発光装置の製造プロセス（絶縁部形成まで）を示す工程図である。FIGS. 9A to 9D are process diagrams illustrating a manufacturing process (up to formation of an insulating portion) of the light emitting device according to the fourth embodiment. （ａ）から（ｄ）は、第４の実施の形態の発光装置の製造プロセス（導電部形成から完成まで）を示す工程図である。FIGS. 9A to 9D are process diagrams illustrating a manufacturing process (from formation of a conductive portion to completion) of a light emitting device according to a fourth embodiment. 本発明の第５の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device which concerns on the 5th Embodiment of this invention. 本発明の第６の実施の形態に係る発光装置を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）のＡ−Ａ部における断面図である。The light-emitting device which concerns on the 6th Embodiment of this invention is shown, (a) is a top view of a light-emitting device, (b) is sectional drawing in the AA part of (a). （ａ）は、本発明の第７の実施の形態に係る発光装置を示し、（ａ）は発光装置の平面図、（ｂ）は（ａ）のＢ−Ｂ部における断面図である。(A) shows the light-emitting device concerning the 7th Embodiment of this invention, (a) is a top view of a light-emitting device, (b) is sectional drawing in the BB part of (a). 本発明の第８の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device which concerns on the 8th Embodiment of this invention. 本発明の第９の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device which concerns on the 9th Embodiment of this invention. 本発明の第１０の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device which concerns on the 10th Embodiment of this invention. 本発明の第１１の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device which concerns on the 11th Embodiment of this invention. 本発明の第１２の実施の形態に係る発光装置の断面図である。It is sectional drawing of the light-emitting device based on the 12th Embodiment of this invention. 本発明の第１３の実施の形態に係るＬＥＤランプの断面図である。It is sectional drawing of the LED lamp which concerns on the 13th Embodiment of this invention.

符号の説明Explanation of symbols

１…発光装置、２…ＬＥＤ素子、３…Ｃｕ基板、３Ａ…絶縁部、３Ｂ…導電部、３Ｃ…溝、３Ｄ…底面導電部、３Ｅ…スルーホール、４…ワイヤ、５…封止樹脂、５Ａ…光学形状面、６…リードフレーム、７…レンズ、８…半田、９…実装基板、１０…ＬＥＤランプ、１１…フレキシブル基板、１２…放熱板、３０…リフレクタ部、３０Ａ…傾斜部、３０Ｂ…素子搭載部、５０…蛍光体含有封止樹脂、１１０…窓、１１１…配線パターン形成面、３００…放熱部、３００Ａ…Ｃｕ配線層、３００Ｂ…Ｃｕ配線層、３０１…絶縁層、３０２…突起部、３０３…ボンディングエリア DESCRIPTION OF SYMBOLS 1 ... Light-emitting device, 2 ... LED element, 3 ... Cu substrate, 3A ... Insulation part, 3B ... Conductive part, 3C ... Groove, 3D ... Bottom conductive part, 3E ... Through-hole, 4 ... Wire, 5 ... Sealing resin, 5A ... Optical shape surface, 6 ... Lead frame, 7 ... Lens, 8 ... Solder, 9 ... Mounting board, 10 ... LED lamp, 11 ... Flexible board, 12 ... Heat sink, 30 ... Reflector part, 30A ... Inclined part, 30B DESCRIPTION OF SYMBOLS ... Element mounting part, 50 ... Phosphor containing sealing resin, 110 ... Window, 111 ... Wiring pattern formation surface, 300 ... Heat radiation part, 300A ... Cu wiring layer, 300B ... Cu wiring layer, 301 ... Insulating layer, 302 ... Projection Part, 303 ... bonding area

Claims (13)

発光素子と、
前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、
前記発光素子を封止する封止部とを有することを特徴とする発光装置。 A light emitting element;
First and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element are integrally provided via an insulating layer, and the mounting portion of the light emitting element is formed by molding. A substrate made of a conductive material provided;
A light emitting device comprising: a sealing portion for sealing the light emitting element. 前記搭載部は、前記基板に対して前記発光素子を直接搭載するように前記第１および第２の配線層と前記絶縁層とが除去されていることを特徴とする請求項１に記載の発光装置。   2. The light emitting device according to claim 1, wherein the mounting portion has the first and second wiring layers and the insulating layer removed so that the light emitting element is directly mounted on the substrate. apparatus. 前記基板は、前記発光素子の発する熱を放熱する放熱部と、前記放熱部と電気的に絶縁されて前記第１および第２の配線層と電気的に接続される導電部とを有することを特徴とする請求項１に記載の発光装置。   The substrate includes a heat dissipating part that dissipates heat generated by the light emitting element, and a conductive part electrically insulated from the heat dissipating part and electrically connected to the first and second wiring layers. The light-emitting device according to claim 1. 前記絶縁層は、前記基板および前記配線層との剥離を生じない熱膨張率を有することを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the insulating layer has a coefficient of thermal expansion that does not cause separation from the substrate and the wiring layer. 前記配線層は、前記発光素子から放射される光を反射する光反射性を有することを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the wiring layer has light reflectivity for reflecting light emitted from the light emitting element. 前記搭載部は、前記配線層の表面から第１の深さを有して設けられて発光素子を搭載する第１の領域と、前記第１の領域より小なる第２の深さを有して前記発光素子の第１および第２の導電型の電極とワイヤを介して電気的に接続される第２の領域と、前記第１および第２の領域の間に設けられる傾斜部とを有することを請求項１に記載の発光装置。   The mounting portion is provided with a first depth from the surface of the wiring layer and has a first region on which the light emitting element is mounted, and a second depth smaller than the first region. A second region electrically connected to the first and second conductivity type electrodes of the light emitting element via a wire, and an inclined portion provided between the first and second regions. The light emitting device according to claim 1. 前記発光素子は、ＧａＮ系半導体からなるＬＥＤ素子であることを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the light emitting element is an LED element made of a GaN-based semiconductor. 前記発光素子は、前記第１および第２の導電型の電極が設けられる光取り出し面から光を放射するフェイスアップ型ＬＥＤ素子であることを特徴とする請求項１に記載の発光装置。   2. The light emitting device according to claim 1, wherein the light emitting element is a face-up type LED element that emits light from a light extraction surface on which the first and second conductivity type electrodes are provided. 前記封止樹脂は、前記発光素子から放射される光によって励起される蛍光体を含むことを特徴とする請求項１に記載の発光装置。   The light emitting device according to claim 1, wherein the sealing resin includes a phosphor excited by light emitted from the light emitting element. 発光素子と、
前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、
前記発光素子を封止する封止部と、
前記封止部から入射する光を所望の方向に放射させる光学形状面を有した光学系とを有することを特徴とする発光装置。 A light emitting element;
First and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element are integrally provided via an insulating layer, and the mounting portion of the light emitting element is formed by molding. A substrate made of a conductive material provided;
A sealing portion for sealing the light emitting element;
A light emitting device comprising: an optical system having an optical shape surface that radiates light incident from the sealing portion in a desired direction. 前記光学系は、ガラス材料で形成されることを特徴とする請求項１０に記載の発光装置。   The light emitting device according to claim 10, wherein the optical system is made of a glass material. 前記光学系は、樹脂材料で形成されて前記基板を一体的に封止する構成の請求項１０に記載の発光装置。   The light emitting device according to claim 10, wherein the optical system is formed of a resin material and integrally seals the substrate. 発光素子と、前記発光素子の第１および第２の導電型の電極と電気的に接続される第１および第２の配線層を絶縁層を介して一体的に設けられ、前記発光素子の搭載部が成形によって設けられた導電材料からなる基板と、前記発光素子を封止する封止部とを有する発光装置と、
第１の面に前記発光装置と電気的に接続される配線パターンを有し、前記第１の面に複数の前記発光装置を所定の配列で実装し、前記発光装置の発光に基づく光を前記第１の面から第２の面に取り出して外部放射させる開口部を前記所定の配列で複数設けられる実装基板と、
複数の前記発光装置の実装面と反対側の面に取り付けられる放熱部とを有することを特徴とするＬＥＤランプ。
The light emitting element and the first and second wiring layers electrically connected to the first and second conductivity type electrodes of the light emitting element are integrally provided via an insulating layer, and the light emitting element is mounted thereon. A light emitting device having a substrate made of a conductive material provided by molding, and a sealing portion for sealing the light emitting element;
A wiring pattern electrically connected to the light emitting device on the first surface; a plurality of the light emitting devices are mounted in a predetermined arrangement on the first surface; and light based on light emission of the light emitting device is A mounting substrate provided with a plurality of openings arranged in the predetermined arrangement to be taken out from the first surface to the second surface and radiate outside;
An LED lamp, comprising: a heat dissipating part attached to a surface opposite to the mounting surface of the plurality of light emitting devices.
JP2005054406A 2005-02-28 2005-02-28 Light emitting device and led lamp Withdrawn JP2006245032A (en)

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