JP2003069096A - Continuous oscillation milliwave/sub-milliwave laser based on integrated circuit including intrinsic josephson element - Google Patents
Continuous oscillation milliwave/sub-milliwave laser based on integrated circuit including intrinsic josephson elementInfo
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- JP2003069096A JP2003069096A JP2001255872A JP2001255872A JP2003069096A JP 2003069096 A JP2003069096 A JP 2003069096A JP 2001255872 A JP2001255872 A JP 2001255872A JP 2001255872 A JP2001255872 A JP 2001255872A JP 2003069096 A JP2003069096 A JP 2003069096A
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- Japan
- Prior art keywords
- wave
- milliwave
- laser
- integrated circuit
- millimeter
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固有ジョセフソン
素子を含む集積回路による連続発振ミリ波・サブミリ波
レーザーに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous wave millimeter-wave / submillimeter-wave laser using an integrated circuit including a unique Josephson device.
【０００２】[0002]
【従来の技術】従来、このような分野の技術文献として
は、以下に開示するようなものがあった。2. Description of the Related Art Heretofore, there have been the following technical literatures in such a field.
【０００３】（１）Ｈ．Ｂ．Ｗａｎｇ，ｅｔ ａｌ．，
Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ．，７８（２５），４０
１０（２００１）．
（２）Ｈ．Ｂ．Ｗａｎｇ，ｅｔ ａｌ．，Ｐｈｙｓ．Ｒ
ｅｖ．Ｌｅｔｔ．，（ｔｏ ｂｅ ｐｕｂｌｉｓｈｅ
ｄ）．
（３）Ｂ．Ｖａｓｉｌｉ，ｅｔ ａｌ．，Ａｐｐｌ．Ｐ
ｈｙｓ．Ｌｅｔｔ．，７８（８），１１３７（２００
１）．
この技術文献（３）によれば、Ｐａｕｌａ Ｂａｒｂａ
ｒａらはＮｂジョセフソン接合集積回路技術を用いて、
以下のようなＮｂジョセフソン接合アレイを提案してい
る。(1) H. B. Wang, et al. ，
Appl. Phys. Lett. , 78 (25), 40
10 (2001). (2) H. B. Wang, et al. , Phys. R
ev. Lett. , (To be publicize
d). (3) B. Vasili, et al. , Appl. P
hys. Lett. , 78 (8), 1137 (200
1). According to this technical document (3), Paula Barba
ra et al., using Nb Josephson junction integrated circuit technology,
The following Nb Josephson junction array is proposed.
【０００４】図８はかかる従来のＮｂジョセフソン接合
アレイの構成図であり、図８（ａ）はその平面図、図８
（ｂ）は図８（ａ）のＡ−Ａ′線断面図、図８（ｃ）は
その等価回路図、図９はその電流−電圧特性図であり、
横軸は電圧Ｖ（ｍＶ）、縦軸は電流Ｉ（μＡ）を示して
いる。FIG. 8 is a block diagram of such a conventional Nb Josephson junction array, and FIG. 8A is a plan view thereof.
8B is a sectional view taken along the line AA ′ of FIG. 8A, FIG. 8C is an equivalent circuit diagram thereof, and FIG. 9 is a current-voltage characteristic diagram thereof.
The horizontal axis represents voltage V (mV) and the vertical axis represents current I (μA).
【０００５】これらの図において、１０１はジョセフソ
ン接合（ＪＪ）装置、１０２は下部Ｎｂ、１０３は上部
Ｎｂ、１０４はグランドプレーン、ＩA は直流電流源、
Ｌはインダクタンス、Ｃはキャパシタ、Ｒは抵抗（負
荷）、ＸはＮｂジョセフソン接合である。In these figures, 101 is a Josephson junction (JJ) device, 102 is a lower Nb, 103 is an upper Nb, 104 is a ground plane, I A is a direct current source,
L is an inductance, C is a capacitor, R is a resistance (load), and X is an Nb Josephson junction.
【０００６】これらの図に示すように、Ｎｂジョセフソ
ン接合アレイは、１個の接合を有する１４４個の接合ア
レイからなる。この接合アレイのＩ−Ｖ特性を測定した
ところ、鋭い共振特性を示した。この鋭い共振特性は１
００ＧＨｚ帯のレーザー発振していることを示している
ことが、検波実験により明らかになった。連続波発振
で、その最大電力Ｐmax は、
Ｐmax ＝３ｍＶ×１００μＡ
＝３×１０-7Ｗ
つまり、最大電力は約０．３μＷ（１０-4Ｗ／ｃｍ2 ）
であった。As shown in these figures, the Nb Josephson junction array consists of 144 junction arrays with one junction. When the IV characteristics of this junction array were measured, a sharp resonance characteristic was shown. This sharp resonance characteristic is 1
It was revealed by the detection experiment that the laser oscillation in the 00 GHz band was shown. In continuous wave oscillation, the maximum power P max is P max = 3 mV × 100 μA = 3 × 10 −7 W That is, the maximum power is about 0.3 μW (10 −4 W / cm 2 ).
Met.
【０００７】なお、本願発明者らは、既に、ＢＳＣＣＯ
単結晶装置（固有ジョセフソン接合装置）とその製造方
法について提案している。The inventors of the present application have already reported that BSCCO
We propose a single crystal device (inherent Josephson junction device) and its manufacturing method.
【０００８】[0008]
【発明が解決しようとする課題】現在の情報通信技術
は、１０ＧＨｚ帯までを使っているが、将来の情報量の
増大に対応するためには、使用周波数を増大させること
が必要である。現在使用中の周波数の１００倍がテラヘ
ルツ波であるが、この領域は発振器、伝送路、受信機等
の基本素子が開発されていないため、未開周波数となっ
ている。The current information communication technology uses up to 10 GHz band, but it is necessary to increase the frequency used in order to cope with the future increase in the amount of information. The terahertz wave is 100 times the frequency currently in use, but this region is an unopened frequency because basic elements such as an oscillator, a transmission line, and a receiver have not been developed.
【０００９】本発明は、上記したＢＳＣＣＯ単結晶装置
を用いて、テラヘルツ帯のアンテナとチョーク回路を集
積し、連続発振する固有ジョセフソン素子を含む集積回
路による連続発振ミリ波・サブミリ波レーザーを提供す
ることを目的とする。The present invention provides a continuous-wave millimeter-wave / sub-millimeter-wave laser using an integrated circuit including a terahertz band antenna and a choke circuit integrated with the above-mentioned BSCCO single crystal device and including a continuous Josephson device. The purpose is to do.
【００１０】[0010]
【課題を解決するための手段】本発明は、上記目的を達
成するために、
〔１〕固有ジョセフソン素子を含む集積回路による連続
発振ミリ波・サブミリ波レーザーであって、直流電流源
と、この直流電流源に接続されるとともに、テラヘルツ
帯のアンテナとチョーク回路が搭載された多数個の固有
ジョセフソン接合装置が直並列に接続される２次元アレ
イとを備え、前記直流電流源から直流電流を注入するこ
とにより、連続発振するミリ波・サブミリ波レーザー光
を生成させる。In order to achieve the above object, the present invention provides [1] a continuous wave millimeter-wave / submillimeter-wave laser by an integrated circuit including a unique Josephson element, which comprises a direct current source, A direct current source is provided with a two-dimensional array which is connected to the direct current source and which is connected in series and parallel with a large number of unique Josephson junction devices equipped with terahertz band antennas and choke circuits. Is injected to generate continuously oscillating millimeter-wave / submillimeter-wave laser light.
【００１１】〔２〕上記〔１〕記載の固有ジョセフソン
素子を含む集積回路による連続発振ミリ波・サブミリ波
レーザーにおいて、前記多数個の固有ジョセフソン接合
装置は１０，０００個以上であることを特徴とする。[2] In the continuous wave millimeter-wave / submillimeter-wave laser using the integrated circuit including the unique Josephson element described in [1], the number of the unique Josephson junction devices is 10,000 or more. Characterize.
【００１２】〔３〕上記〔１〕又は〔２〕記載の固有ジ
ョセフソン素子を含む集積回路による連続発振ミリ波・
サブミリ波レーザーにおいて、前記チョーク回路は、ｒ
ｆチョーク回路であることを特徴とする。[3] Continuous oscillation millimeter wave by an integrated circuit including the intrinsic Josephson element according to the above [1] or [2]
In the submillimeter wave laser, the choke circuit is
It is characterized by being an f choke circuit.
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て詳細に説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below.
【００１４】図１は本発明にかかる固有ジョセフソン接
合装置（ＩＪＪ：Ｉｎｔｒｉｎｓｉｃ Ｊｏｓｅｐｈｓ
ｏｎ Ｊｕｎｃｔｉｏｎ装置）の両面加工工程を示す
図、図２は均一なＩｃを持つ両面加工したＩＪＪ装置の
電流−電圧（Ｉ−Ｖ）特性図である。FIG. 1 shows an intrinsic Josephson junction device (IJJ: Intrinsic Josephs) according to the present invention.
on Junction device), and FIG. 2 is a current-voltage (IV) characteristic diagram of a double-sided IJJ device having uniform Ic.
【００１５】まず、ＩＪＪ装置の両面加工方法について
説明する。First, a double-sided processing method of the IJJ apparatus will be described.
【００１６】まず、図１（ａ）に示すように、基板
（例えば、シリコン基板）１１上に劈開されたＢＳＣＣ
Ｏ単結晶（ジョセフソン接合結晶）１２をポリイミドで
固定する。First, as shown in FIG. 1A, a BSCC cleaved on a substrate (for example, a silicon substrate) 11 is formed.
An O single crystal (Josephson junction crystal) 12 is fixed with polyimide.
【００１７】次いで、図１（ｂ）に示すように、第１
のフォトレジスト１３をＢＳＣＣＯ単結晶１２表面上に
フォトリソグラフィ技術を用いて配置する。そこで、第
１のイオンミリング１４により特定の深さまにまで試料
をエッチングする。Then, as shown in FIG. 1B, the first
Photoresist 13 is placed on the surface of BSCCO single crystal 12 using photolithography. Therefore, the sample is etched to a specific depth by the first ion milling 14.
【００１８】次いで、図１（ｃ）に示すように、第２
のフォトレジスト１５をＢＳＣＣＯ単結晶１２表面上に
フォトリソグラフィ技術を用いて配置する。そして、第
２のフォトレジスト１５を用いて第２のイオンミリング
１６を行い、固有ジョセフソン接合をつくる。Then, as shown in FIG. 1C, the second
Photoresist 15 is placed on the surface of the BSCCO single crystal 12 using photolithography. Then, the second ion milling 16 is performed using the second photoresist 15 to form an intrinsic Josephson junction.
【００１９】次に、図１（ｄ）に示すように、第２の
フォトレジスト１５を除去し、試料を劈開し、裏返した
ＢＳＣＣＯ単結晶片１７〔図１（ｅ）参照〕を得る。Next, as shown in FIG. 1 (d), the second photoresist 15 is removed and the sample is cleaved to obtain an inverted BSCCO single crystal piece 17 (see FIG. 1 (e)).
【００２０】次に、図１（ｅ）に示すように、新たな
基板１８上にそのＢＳＣＣＯ単結晶片１７を固定し、フ
ォトリソグラフィ技術を用いて配置する。そして、第３
のフォトレジスト１９をＢＳＣＣＯ単結晶片１７上に形
成する。Next, as shown in FIG. 1E, the BSCCO single crystal piece 17 is fixed on a new substrate 18 and arranged by using a photolithography technique. And the third
A photoresist 19 is formed on the BSCCO single crystal piece 17.
【００２１】次に、図１（ｆ）に示すように、第３の
フォトレジスト１９を用いた第３のイオンミリング２０
でＩＪＪ装置２１をパターニングする。Next, as shown in FIG. 1F, the third ion milling 20 using the third photoresist 19 is performed.
Then, the IJJ device 21 is patterned.
【００２２】このようにして両面加工したＩＪＪ装置２
１のＩ−Ｖ特性を図２に示す。The IJJ apparatus 2 which has been processed on both sides in this way
The IV characteristic of No. 1 is shown in FIG.
【００２３】この図では、Ｘ軸は２００ｍＶ／目盛（ｄ
ｉｖ）、Ｙ軸は２００μＡ／目盛（ｄｉｖ）、温度Ｔは
４．２Ｋである。ここでは、均一なＩｃを持つ両面加工
したＩＪＪ装置２１の接合数は１８個である。In this figure, the X-axis is 200 mV / scale (d
iv), the Y axis is 200 μA / scale (div), and the temperature T is 4.2K. Here, the number of joints of the double-sided IJJ device 21 having a uniform Ic is 18.
【００２４】図３は本発明にかかる固有ジョセフソン素
子を含む集積回路によるミリ波・サブミリ波受信機の構
成図であり、図３（ａ）はその平面図、図３（ｂ）はそ
の斜視図、図３（ｃ）はその等価回路図である。FIG. 3 is a block diagram of a millimeter-wave / submillimeter-wave receiver using an integrated circuit including an intrinsic Josephson element according to the present invention. FIG. 3 (a) is its plan view and FIG. 3 (b) is its perspective view. FIG. 3C is an equivalent circuit diagram thereof.
【００２５】この図において、２１は本発明にかかる両
面加工した多数の接合を有するＩＪＪ装置（高さｈは概
ね２５．５ｎｍ）、３０は基板、３１はボータイアンテ
ナ、３２はｒｆチョーク回路、３３は照射されるサブミ
リ波、３４は電圧端子、３５は電流端子である。In this figure, 21 is an IJJ device (height h is about 25.5 nm) having a large number of double-sided joints according to the present invention, 30 is a substrate, 31 is a bowtie antenna, 32 is an rf choke circuit, 33 Is a submillimeter wave to be irradiated, 34 is a voltage terminal, and 35 is a current terminal.
【００２６】図１及び図２に示された本発明にかかるＩ
ＪＪ装置２１を、図３に示すように、アンテナ３１やｒ
ｆチョーク回路３２が形成された基板（集積回路基板）
３０に集積化する。I according to the invention shown in FIGS. 1 and 2.
As shown in FIG. 3, the JJ device 21 includes an antenna 31 and an r
A substrate on which the f choke circuit 32 is formed (integrated circuit substrate)
Integrated into 30.
【００２７】そこで、このＩＪＪ装置２１の接合にサブ
ミリ波３３を基板３０側から照射すると、図４に示すよ
うに、明確なシャピロステップを観測できる。Therefore, when the submillimeter wave 33 is applied to the joint of the IJJ device 21 from the substrate 30 side, a clear Shapiro step can be observed as shown in FIG.
【００２８】図４において、照射周波数ｆFIR ＝１．６
ＴＨｚに対応するジョセフソン電圧ｖ＝φ0 ｆFIR Ｎ＝
３．４×Ｎ（ｍＶ）が発生している。ここでＮは接合数
であり、Ｘ軸は１０ｍＶ／目盛（ｄｉｖ）、Ｙ軸は２μ
Ａ／目盛（ｄｉｖ）、温度は６Ｋである。In FIG. 4, the irradiation frequency f FIR = 1.6
Josephson voltage corresponding to THz v = φ 0 f FIR N =
3.4 × N (mV) is generated. Here, N is the number of joints, the X axis is 10 mV / scale (div), and the Y axis is 2 μ.
A / division (div), temperature is 6K.
【００２９】図４から明らかなように、明確なゼロクロ
ス電圧が見られる。これはＩＪＪ装置２１とテラヘルツ
（ＴＨｚ）波の結合が極めて良好であることを示してお
り、テラヘルツ（ＴＨｚ）波検出器として実現できるこ
とを示している。As is clear from FIG. 4, a clear zero-cross voltage can be seen. This indicates that the coupling between the IJJ device 21 and the terahertz (THz) wave is extremely good, and it can be realized as a terahertz (THz) wave detector.
【００３０】そこで、従来技術（３）に示したＰａｕｌ
ａ ＢａｒｂａｒａらのＮｂジョセフソン接合集積回路
技術をも考慮して、本発明の固有ジョセフソン素子を含
む集積回路による連続発振ミリ波・サブミリ波レーザー
を得ることができた。Therefore, Paul shown in the prior art (3) is used.
In consideration of the Nb Josephson junction integrated circuit technology of a Barbara et al., a continuous wave millimeter-wave / submillimeter-wave laser can be obtained by an integrated circuit including the unique Josephson device of the present invention.
【００３１】図５は本発明の実施例を示す高温超伝導体
ＩＪＪを用いて作製した連続波テラヘルツ（ＴＨｚ）帯
レーザーの構成図であり、図５（ａ）はその平面図、図
５（ｂ）は図５（ａ）のＡ部断面図、図５（ｃ）はその
等価回路図、図６はその連続波ＴＨｚ帯レーザーのＩ−
Ｖ特性図であり、横軸は電圧（０．５Ｖ／目盛）、縦軸
は電流（１ｍＡ／目盛）を示している。図７はそのＩ−
Ｖ特性の模式図である。FIG. 5 is a constitutional view of a continuous wave terahertz (THz) band laser produced by using a high temperature superconductor IJJ showing an embodiment of the present invention. FIG. 5 (a) is a plan view thereof and FIG. 5B is a sectional view of the portion A in FIG. 5A, FIG. 5C is an equivalent circuit diagram thereof, and FIG. 6 is I-of the continuous wave THz band laser.
FIG. 6 is a V characteristic diagram, in which the horizontal axis represents voltage (0.5 V / scale) and the vertical axis represents current (1 mA / scale). Figure 7 shows its I-
It is a schematic diagram of V characteristics.
【００３２】これらの図において、４０は基板、４１は
本発明にかかるＩＪＪ装置、４２はそのＩＪＪ装置４１
が直列に接続された行配線、４３はその行の各ＩＪＪ装
置と交差する列配線、４４は電圧端子、４５は電流端
子、ＩA は直流電流源、Ｃはキャパシタ、Ｌはインダク
タンス、Ｒｅは放射抵抗であり、マトリックス状の２次
元アレイを構成している。In these figures, 40 is a substrate, 41 is an IJJ apparatus according to the present invention, and 42 is the IJJ apparatus 41.
There row wiring connected in series, 43 column lines intersecting with each IJJ device of the line, the voltage terminals 44, 45 is current terminal, I A DC current source, C is a capacitor, L is inductance, Re is Radiation resistance, which constitutes a matrix-shaped two-dimensional array.
【００３３】図５に示すように、ＩＪＪ装置４１を直並
列に１０，０００個集積した平面回路を作製する。その
２次元のＩＪＪ装置アレイに直流電流源から直流電流を
供給すると、図６に示すような鋭い共振特性がみられ、
レーザー発振していることがわかる。すなわち、図７に
示すように、ΔＶはφ0 ｆ0 であり、電流を増加する
と、各列が左から順番に電圧発生、ｆ0 で共振してい
る。最大放射電力Ｐmax は、ここでは、Ｐmax ＝２ｍＡ
×０．８Ｖ＝１．６ｍＷ＝１．６×１０-3Ｗとなる。As shown in FIG. 5, a planar circuit in which 10,000 IJJ devices 41 are integrated in series and parallel is manufactured. When a direct current is supplied to the two-dimensional IJJ device array from a direct current source, a sharp resonance characteristic as shown in FIG. 6 is observed,
You can see that the laser is oscillating. That is, as shown in FIG. 7, ΔV is φ 0 f 0 , and when the current is increased, each column sequentially generates voltage from the left and resonates at f 0 . The maximum radiated power P max here is P max = 2 mA
× 0.8V = 1.6 mW = 1.6 × 10 −3 W
【００３４】この場合の周波数は、約４００ＧＨｚであ
り、出力電力は約１．６ｍＷ（１６Ｗ／ｃｍ2 ）であっ
た。その特徴は、ＩＪＪ装置が積層構造のため容易に１
０，０００個以上の集積化が可能であることであり、そ
の出力は、理論的には個数のＮ2 に比例する。実験結果
では６乗倍大となる。The frequency in this case was about 400 GHz, and the output power was about 1.6 mW (16 W / cm 2 ). Its feature is that the IJJ device has a laminated structure, so
It is possible to integrate more than 10,000, and the output is theoretically proportional to the number N 2 . The experimental result is 6 times larger.
【００３５】本発明によれば、固有ジョセフソン接合
（ＩＪＪ）装置（単結晶素子）を二次元アレイに並べる
集積回路とした。因みに、横幅は１５０μｍである。According to the present invention, an intrinsic Josephson junction (IJJ) device (single crystal element) is arranged in a two-dimensional array. Incidentally, the width is 150 μm.
【００３６】そして、テラヘルツ帯のアンテナとチョー
ク回路のついた１０，０００個以上の単結晶素子アレイ
が作製され、その結果、直流電流を注入するとテラヘル
ツ波発光超伝導レーザーとなることが明らかとなった。Then, 10,000 or more single crystal element arrays with terahertz band antennas and choke circuits were produced. As a result, it became clear that when a direct current was injected, a terahertz wave emitting superconducting laser was obtained. It was
【００３７】本発明によれば、超伝導単結晶接合集積回
路技術により、テラヘルツ波用の連続波レーザー発振器
を構成することができる。According to the present invention, a continuous wave laser oscillator for terahertz waves can be constructed by the superconducting single crystal junction integrated circuit technology.
【００３８】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００３９】[0039]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、多数（１０，０００個以上）の固有ジョセフソ
ン素子とテラヘルツ帯のアンテナ、チョーク回路を搭載
した集積回路に直流電流を供給し、連続発振するミリ波
・サブミリ波レーザー光を生成されるテラヘルツ波発光
超伝導レーザー、つまり、連続発振ミリ波・サブミリ波
レーザーを実現できる。As described above in detail, according to the present invention, a direct current is applied to an integrated circuit equipped with a large number (10,000 or more) of unique Josephson elements, terahertz band antennas, and choke circuits. It is possible to realize a terahertz wave emitting superconducting laser that supplies and continuously oscillates millimeter-wave / submillimeter-wave laser light, that is, continuous-wave millimeter-wave / submillimeter-wave laser.
【図１】本発明にかかるＩＪＪ装置の両面加工工程を示
す図である。FIG. 1 is a diagram showing a double-sided processing step of an IJJ apparatus according to the present invention.
【図２】本発明にかかる均一なＩｃを持つ両面加工した
ＩＪＪ装置の電流−電圧（Ｉ−Ｖ）特性図である。FIG. 2 is a current-voltage (IV) characteristic diagram of a double-sided IJJ device having uniform Ic according to the present invention.
【図３】本発明にかかるアンテナやｒｆチョーク回路と
共に集積化されたミリ波・サブミリ波受信機を示す図で
ある。FIG. 3 is a diagram showing a millimeter wave / submillimeter wave receiver integrated with an antenna and an rf choke circuit according to the present invention.
【図４】本発明にかかる基板側から１．６Ｈｚのサブミ
リ波を照射したときのＩ−Ｖ特性図である。FIG. 4 is an IV characteristic diagram when a submillimeter wave of 1.6 Hz is irradiated from the substrate side according to the present invention.
【図５】本発明の実施例を示す高温超伝導体ＩＪＪを用
いて作製した連続波ＴＨｚ帯レーザーの構成図である。FIG. 5 is a configuration diagram of a continuous wave THz band laser manufactured by using a high temperature superconductor IJJ showing an example of the present invention.
【図６】本発明の実施例を示す高温超伝導体ＩＪＪを用
いて作製した連続波ＴＨｚ帯レーザーの電流−電圧特性
図である。FIG. 6 is a current-voltage characteristic diagram of a continuous wave THz band laser produced by using a high temperature superconductor IJJ showing an example of the present invention.
【図７】図６のＩ−Ｖ特性の模式図である。FIG. 7 is a schematic view of the IV characteristic of FIG.
【図８】従来のＮｂジョセフソン接合アレイの構成図で
ある。FIG. 8 is a configuration diagram of a conventional Nb Josephson junction array.
【図９】従来のＮｂジョセフソン接合アレイの電流−電
圧特性図である。FIG. 9 is a current-voltage characteristic diagram of a conventional Nb Josephson junction array.
１１ 基板（例えば、シリコン基板） １２ ＢＳＣＣＯ単結晶（ジョセフソン接合結晶） １３ 第１のフォトレジスト １４ 第１のイオンミリング １５ 第２のフォトレジスト １６ 第２のイオンミリング １７ 裏返したＢＳＣＣＯ単結晶片 １８ 新たな基板 １９ 第３のフォトレジスト ２０ 第３のイオンミリング ２１，４１ ＩＪＪ装置 ３０，４０ 基板（集積回路基板） ３１ アンテナ（ボータイアンテナ） ３２ ｒｆチョーク回路 ３３ 照射されるサブミリ波 ３４，４４ 電圧端子 ３５，４５ 電流端子 ４２ 行配線 ４３ 列配線 ＩA 直流電流源 Ｃ キャパシタ Ｌ インダクタンス11 substrate (for example, silicon substrate) 12 BSCCO single crystal (Josephson junction crystal) 13 first photoresist 14 first ion milling 15 second photoresist 16 second ion milling 17 flipped BSCCO single crystal piece 18 New substrate 19 Third photoresist 20 Third ion milling 21,41 IJJ equipment 30,40 Substrate (integrated circuit board) 31 Antenna (bowtie antenna) 32 rf choke circuit 33 Irradiated submillimeter wave 34,44 Voltage terminal 35, 45 Current terminal 42 Row wiring 43 Column wiring I A DC current source C Capacitor L Inductance
フロントページの続き Ｆターム(参考） 4M113 AA01 AA06 AA16 AA25 AC12 AD36 BC04 CA36 Continued front page F-term (reference) 4M113 AA01 AA06 AA16 AA25 AC12 AD36 BC04 CA36
Claims (3)
に接続されるとともに、テラヘルツ帯のアンテナとチョ
ーク回路が搭載された多数個の固有ジョセフソン接合装
置が直並列に接続される二次元アレイとを備え、（ｃ）
前記直流電流源から直流電流を注入することにより、連
続発振するミリ波・サブミリ波レーザー光を生成させる
固有ジョセフソン素子を含む集積回路による連続発振ミ
リ波・サブミリ波レーザー。1. A direct current source, and (b) a large number of unique Josephson junction devices, which are connected to the direct current source and have a terahertz band antenna and a choke circuit, connected in series and parallel. And a two-dimensional array
A continuous wave millimeter-wave / submillimeter-wave laser by an integrated circuit including an intrinsic Josephson element that generates continuous-wave millimeter-wave / submillimeter-wave laser light by injecting a direct current from the DC current source.
含む集積回路による連続発振ミリ波・サブミリ波レーザ
ーにおいて、前記多数個の固有ジョセフソン接合装置は
１０，０００個以上であることを特徴とする固有ジョセ
フソン素子を含む集積回路による連続発振ミリ波・サブ
ミリ波レーザー。2. A continuous wave millimeter-wave / submillimeter-wave laser using an integrated circuit including the unique Josephson device according to claim 1, wherein the number of the unique Josephson junction devices is 10,000 or more. Continuous-wave millimeter-wave / submillimeter-wave laser using an integrated circuit that includes a unique Josephson device
素子を含む集積回路による連続発振ミリ波・サブミリ波
レーザーにおいて、前記チョーク回路は、ｒｆチョーク
回路であることを特徴とする固有ジョセフソン素子を含
む集積回路による連続発振ミリ波・サブミリ波レーザ
ー。3. A continuous oscillation millimeter-wave / submillimeter-wave laser using an integrated circuit including the intrinsic Josephson device according to claim 1, wherein the choke circuit is an rf choke circuit. Continuous wave millimeter-wave / sub-millimeter-wave laser with integrated circuit including
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| JP2001255872A JP2003069096A (en) | 2001-08-27 | 2001-08-27 | Continuous oscillation milliwave/sub-milliwave laser based on integrated circuit including intrinsic josephson element |
| PCT/JP2002/008555 WO2003019738A1 (en) | 2001-08-27 | 2002-08-26 | Cw-oscillation millimeter wave/submillimeter wave laser composed of integrated circuit including intrinsic josephson device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001255872A JP2003069096A (en) | 2001-08-27 | 2001-08-27 | Continuous oscillation milliwave/sub-milliwave laser based on integrated circuit including intrinsic josephson element |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006210585A (en) * | 2005-01-27 | 2006-08-10 | National Institute For Materials Science | New type terahertz oscillator using laminated josephson junction |
| JP2006344761A (en) * | 2005-06-09 | 2006-12-21 | National Institute Of Advanced Industrial & Technology | Coplanar-waveguide josephson junction array structure, digital-analog converter using it, junction array for programmable josephson voltage standard, chip for josephson voltage standard and josephson voltage generation device |
| JP2013004717A (en) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| WO2014012981A1 (en) * | 2012-07-17 | 2014-01-23 | Thales | Oscillator comprising josephson junctions having high-temperature superconducting electrodes, heterodyne detector including such an oscillator and method for manufacturing such an oscillator |
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| US7486250B2 (en) | 2004-02-16 | 2009-02-03 | The Boeing Company | Composite dipole array |
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| JPH10256833A (en) * | 1997-03-13 | 1998-09-25 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive intrinsic josephson junction array element oscillator |
| JP2000514957A (en) * | 1996-07-23 | 2000-11-07 | オクセル・オクサイド・エレクトロニクス・テクノロジー・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Josephson junction array device and manufacturing method thereof |
| JP2002050931A (en) * | 2000-08-03 | 2002-02-15 | Japan Science & Technology Corp | High frequency oscillator using copper oxide superconducting single crystal |
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| JP2000514957A (en) * | 1996-07-23 | 2000-11-07 | オクセル・オクサイド・エレクトロニクス・テクノロジー・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Josephson junction array device and manufacturing method thereof |
| JPH10256833A (en) * | 1997-03-13 | 1998-09-25 | Nippon Telegr & Teleph Corp <Ntt> | Superconductive intrinsic josephson junction array element oscillator |
| JP2002050931A (en) * | 2000-08-03 | 2002-02-15 | Japan Science & Technology Corp | High frequency oscillator using copper oxide superconducting single crystal |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006210585A (en) * | 2005-01-27 | 2006-08-10 | National Institute For Materials Science | New type terahertz oscillator using laminated josephson junction |
| JP2006344761A (en) * | 2005-06-09 | 2006-12-21 | National Institute Of Advanced Industrial & Technology | Coplanar-waveguide josephson junction array structure, digital-analog converter using it, junction array for programmable josephson voltage standard, chip for josephson voltage standard and josephson voltage generation device |
| JP4595069B2 (en) * | 2005-06-09 | 2010-12-08 | 独立行政法人産業技術総合研究所 | Quasi-planar waveguide type Josephson junction array structure, digital-analog converter using the same, programmable array for Josephson voltage standard, chip for Josephson voltage standard, Josephson voltage generator |
| JP2013004717A (en) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| WO2014012981A1 (en) * | 2012-07-17 | 2014-01-23 | Thales | Oscillator comprising josephson junctions having high-temperature superconducting electrodes, heterodyne detector including such an oscillator and method for manufacturing such an oscillator |
| FR2993706A1 (en) * | 2012-07-17 | 2014-01-24 | Thales Sa | OSCILLATOR COMPRISING JOSEPHSON JUNCTION WITH HIGH-TEMPERATURE SUPERCONDUCTING ELECTRODES, HETERODYNE DETECTOR COMPRISING SUCH OSCILLATOR, AND METHOD OF MANUFACTURING SUCH OSCILLATOR |
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