JP2002246664A - Single crystal inherent josephson junction terahertz detector - Google Patents
Single crystal inherent josephson junction terahertz detectorInfo
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- JP2002246664A JP2002246664A JP2001036427A JP2001036427A JP2002246664A JP 2002246664 A JP2002246664 A JP 2002246664A JP 2001036427 A JP2001036427 A JP 2001036427A JP 2001036427 A JP2001036427 A JP 2001036427A JP 2002246664 A JP2002246664 A JP 2002246664A
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- Prior art keywords
- josephson junction
- single crystal
- terahertz
- terahertz detector
- substrate
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、アンテナを結合し
たＢｉ2 Ｓｒ2 ＣａＣｕ2 Ｏ8 単結晶固有ジョセフソン
接合テラヘルツ検出器に関するものである。BACKGROUND OF THE INVENTION The present invention relates to Bi 2 Sr 2 CaCu 2 O 8 single crystal intrinsic Josephson junction terahertz detector coupled to the antenna.
【０００２】[0002]
【従来の技術】一般的に高温超伝導固有ジョセフソン接
合装置は、高いギャップ電圧により、テラヘルツ帯で動
作可能であると目されており、有望なものである。2. Description of the Related Art Generally, a high-temperature superconducting intrinsic Josephson junction device is expected to be operable in a terahertz band with a high gap voltage, and is promising.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記し
た高温超伝導固有ジョセフソン接合装置は１テラヘルツ
以上の周波数において、直接応答は固有ジョセフソン接
合では報告されていない。その主要な問題は、従来のメ
サ型固有ジョセフソン接合が通常大きな土台（同一の材
料）の上に乗った構造をしていることであり、準光学シ
ステムを用いてテラヘルツ信号と固有ジョセフソン接合
とを結合させることを非常に困難にしている。However, no direct response has been reported for the above-mentioned high-temperature superconducting intrinsic Josephson junction device at a frequency of 1 THz or more in the intrinsic Josephson junction. The main problem is that conventional mesa-type intrinsic Josephson junctions are usually mounted on a large base (the same material), and the terahertz signal and the intrinsic Making it very difficult to combine
【０００４】本発明は、上記問題点を除去し、テラヘル
ツ信号系と固有ジョセフソン接合装置とを確実に結合さ
せることができる単結晶固有ジョセフソン接合テラヘル
ツ検出器を提供することを目的とする。An object of the present invention is to provide a single crystal intrinsic Josephson junction terahertz detector capable of reliably coupling a terahertz signal system and an intrinsic Josephson junction device, eliminating the above problems.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕単結晶固有ジョセフソン接合テラヘルツ検出器で
あって、基板と、この基板上に形成される両面加工プロ
セスで作製された全超伝導Ｂｉ2 Ｓｒ2 ＣａＣｕ2 Ｏ8
単結晶固有ジョセフソン接合装置と、このジョセフソン
接合装置に集積化されるアンテナを具備することを特徴
とする。According to the present invention, there is provided a single crystal intrinsic Josephson junction terahertz detector comprising: a substrate; and a double-side processing process formed on the substrate. Superconducting Bi 2 Sr 2 CaCu 2 O 8 produced by
It is characterized by comprising a single crystal intrinsic Josephson junction device and an antenna integrated in the Josephson junction device.
【０００６】〔２〕上記〔１〕記載の単結晶固有ジョセ
フソン接合テラヘルツ検出器において、前記アンテナに
接続されるｒｆチョークフィルタが集積化されることを
特徴とする。[2] In the single crystal intrinsic Josephson junction terahertz detector according to [1], an rf choke filter connected to the antenna is integrated.
【０００７】[0007]
【発明の実施の形態】以下に本発明の実施の形態を図面
に基づき詳細に説明する。Embodiments of the present invention will be described below in detail with reference to the drawings.
【０００８】図１は本発明の実施例を示すアンテナとｒ
ｆチョークフィルタとともに集積された固有ジョセフソ
ン接合装置の概略図である。FIG. 1 shows an antenna and an antenna according to an embodiment of the present invention.
FIG. 4 is a schematic diagram of an intrinsic Josephson junction device integrated with an f choke filter.
【０００９】この図において、１はシリコン基板、２は
そのシリコン基板１上に形成されるｒｆ（ｒａｄｉｏ
ｆｒｅｑｕｅｎｃｙ）チョークフィルタ、３はそのシリ
コン基板１上に形成される平面ボータイアンテナ、４は
そのシリコン基板１上に形成されるＢＳＣＣＯ単結晶
（固有ジョセフソン接合装置）であり、このＢＳＣＣＯ
単結晶（ジョセフソン接合装置）４は３０ｎｍの高さを
有し、複数層４Ａからなり、上部電極４Ｂと下部電極４
Ｃを有する。In this figure, reference numeral 1 denotes a silicon substrate, and 2 denotes an rf (radio) formed on the silicon substrate 1.
frequency choke filter, 3 is a plane bowtie antenna formed on the silicon substrate 1, 4 is a BSCCO single crystal (unique Josephson junction device) formed on the silicon substrate 1, and the BSCCO
The single crystal (Josephson junction device) 4 has a height of 30 nm, is composed of a plurality of layers 4A, and has an upper electrode 4B and a lower electrode 4A.
C.
【００１０】ここで、典型的なものでは、接合のａ−ｂ
面の寸法をサブミクロンまで下げることができ、一方、
ｃ軸方向の厚さを数十から数百Åにすることができる。Here, in a typical case, a-b
Surface dimensions can be reduced to submicron, while
The thickness in the c-axis direction can be several tens to several hundreds of degrees.
【００１１】また、以下の改善がなされた。The following improvements have been made.
【００１２】ＢＳＣＣＯの薄片に対して両面加工プロ
セスを用いることにより、大きな土台構造が無く、直接
基板上に配置した新形の固有ジョセフソン接合装置４を
作製した。By using a double-sided processing process for the BSCCO flakes, a new intrinsic Josephson bonding apparatus 4 having no large base structure and directly disposed on a substrate was manufactured.
【００１３】上部と下部の両方の電極４Ｂ，４Ｃが超
伝導である。Both the upper and lower electrodes 4B, 4C are superconducting.
【００１４】超伝導又は常伝導は、アンテナ（アンテ
ナの種類はボータイアンテナに限られない）３とｒｆチ
ョークフィルタ２が固有ジョセフソン接合４とともに集
積化されている。In the superconducting or normal conducting mode, an antenna (the type of antenna is not limited to a bowtie antenna) 3 and an rf choke filter 2 are integrated together with an intrinsic Josephson junction 4.
【００１５】シリコン基板１は固有ジョセフソン接合
を保持するために使われ、それ故、テラヘルツ信号を自
由空間側とシリコン基板１側から照射することができ
る。The silicon substrate 1 is used to maintain the intrinsic Josephson junction, and therefore, can emit a terahertz signal from the free space side and the silicon substrate 1 side.
【００１６】図２は本発明に係る固有ジョセフソン接合
装置の製造工程図である。FIG. 2 is a manufacturing process diagram of the unique Josephson bonding apparatus according to the present invention.
【００１７】（１）まず、図２（ａ）に示すように、基
板（例えば、シリコン基板）１１上に劈開されたＢＳＣ
ＣＯ単結晶１２をポリイミドで固定する。(1) First, as shown in FIG. 2A, a BSC cleaved on a substrate (for example, a silicon substrate) 11
The CO single crystal 12 is fixed with polyimide.
【００１８】（２）次に、図２（ｂ）に示すように、第
１のフォトレジスト１３をＢＳＣＣＯ単結晶１２表面上
にフォトリソグラフィ技術を用いて配置する。そこで、
第１のイオンミリング１４により特定の深さにまで試料
をエッチングする。(2) Next, as shown in FIG. 2B, a first photoresist 13 is arranged on the surface of the BSCCO single crystal 12 by using a photolithography technique. Therefore,
The sample is etched to a specific depth by the first ion milling 14.
【００１９】（３）次に、図２（ｃ）に示すように、第
２のフォトレジスト１５をＢＳＣＣＯ単結晶１２表面上
にフォトリソグラフィ技術を用いて配置する。そして、
第２のフォトレジスト１５を用いて第２のイオンミリン
グ１６を行い、固有ジョセフソン接合をつくる。(3) Next, as shown in FIG. 2C, a second photoresist 15 is disposed on the surface of the BSCCO single crystal 12 by using a photolithography technique. And
A second ion milling 16 is performed using the second photoresist 15 to form a unique Josephson junction.
【００２０】（４）次に、図２（ｄ）に示すように、第
２のフォトレジスト１５を除去し、試料を劈開し、裏返
したＢＳＣＣＯ単結晶片１７を得る。(4) Next, as shown in FIG. 2D, the second photoresist 15 is removed, the sample is cleaved, and an inverted BSCCO single crystal piece 17 is obtained.
【００２１】（５）次に、図２（ｅ）に示すように、新
たな基板１８上にその単結晶片１７を固定し、フォトリ
ソグラフィ技術を用いて配置する。そして、第３のフォ
トレジスト１９をＢＳＣＣＯ単結晶片１７上に形成す
る。(5) Next, as shown in FIG. 2E, the single crystal piece 17 is fixed on a new substrate 18 and arranged by using a photolithography technique. Then, a third photoresist 19 is formed on the BSCCO single crystal piece 17.
【００２２】（６）次いで、図２（ｆ）に示すように、
第３のフォトレジスト１９を用いた第３のイオンミリン
グ２０でＢＳＣＣＯ単結晶装置をパターニングする。(6) Next, as shown in FIG.
The BSCCO single crystal device is patterned by the third ion milling 20 using the third photoresist 19.
【００２３】（７）最後に、図２（ｇ）に示すように、
第３のフォトレジスト１９を剥離してから、下部電極２
１及び上部電極２２を形成して、固有ジョセフソン接合
装置を得る。(7) Finally, as shown in FIG.
After removing the third photoresist 19, the lower electrode 2
1 and the upper electrode 22 are formed to obtain an intrinsic Josephson junction device.
【００２４】図３は本発明に係る４μｍ×４μｍのａ−
ｂ面の寸法をもつ試料（ＢＳＣＣＯ単結晶）の電流−電
圧特性を示す図である。FIG. 3 shows a 4 μm × 4 μm a-layer according to the present invention.
It is a figure which shows the current-voltage characteristic of the sample (BSCCO single crystal) which has a dimension of b surface.
【００２５】この図に示すように、約２０本の分岐構造
が見られ、これらは、わずか３００Åの厚さの固有ジョ
セフソン接合スタックに依ることを意味する。As shown in this figure, there are about 20 bifurcated structures, which means that they rely on a unique Josephson junction stack of only 300 ° thick.
【００２６】以下、本発明のテラヘルツ検出と実現可能
な応用について説明する。Hereinafter, the terahertz detection of the present invention and possible applications will be described.
【００２７】テラヘルツ検出システムでは、平面ボータ
イアンテナ３、シリコン基板１、延長半球シリコンレン
ズが準光学系を形成する。放射はＣＯ2 レーザーにより
光学的にポンピングされた遠赤外レーザーである。テラ
ヘルツ応答は周波数ｆFIR が１．６２６６ＴＨｚと２．
５２５３ＴＨｚのレーザーを照射して測定された。どち
らの場合にもＮｈｆFIR ／２ｅの電圧で非常に明瞭なシ
ャピロステップが観察された。ここでＮは分岐の次数で
あり、２ｅ／ｈ＝４８４ＭＨｚ／μＶである。In the terahertz detection system, the plane bowtie antenna 3, the silicon substrate 1, and the extended hemispherical silicon lens form a quasi-optical system. Radiation is far infrared laser which is optically pumped by a CO 2 laser. The terahertz response has a frequency f FIR of 1.6266 THz and 2.
It was measured by irradiating a 5253 THz laser. In both cases, a very sharp Shapiro step was observed at a voltage of Nhf FIR / 2e. Here, N is the branch order, and 2e / h = 484 MHz / μV.
【００２８】図４は本発明に係る１．６ＴＨｚの照射下
での電流−電圧特性を示す図である。FIG. 4 is a diagram showing current-voltage characteristics under irradiation of 1.6 THz according to the present invention.
【００２９】この図において、Ｎが１３までの電流−電
圧特性を示している。動作温度は、４．２Ｋから液体窒
素温度までの範囲を網羅する。また、１００ＧＨｚと２
００ＧＨｚの電磁波を試料に照射したところ、両方の周
波数で応答が非常に高感度であった。In this figure, the current-voltage characteristics when N is up to 13 are shown. The operating temperature covers the range from 4.2K to liquid nitrogen temperature. In addition, 100GHz and 2GHz
When the sample was irradiated with an electromagnetic wave of 00 GHz, the response was very high at both frequencies.
【００３０】結果は、固有ジョセフソン接合装置が高周
波応用に非常によく適していることをはっきりと確認し
たものである。そのため、電波天文観測や、次世代超高
周波帯情報技術（ＩＴ）の他、多くの分野で実現可能な
以下のような応用が挙げられる。たとえば、 テラヘルツミキサー 分光器（数ＧＨｚから数ＴＨｚまで） 高周波ＤＡコンバーター 電圧標準器 テラヘルツ発振器などである。The results clearly confirm that the intrinsic Josephson junction device is very well suited for high frequency applications. Therefore, in addition to radio astronomy observation and next-generation ultrahigh frequency band information technology (IT), there are the following applications that can be realized in many fields. For example, a terahertz mixer spectrometer (from several GHz to several THz), a high frequency DA converter, a voltage standard, a terahertz oscillator, and the like.
【００３１】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above embodiment, and various modifications can be made based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００３２】[0032]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、テラヘルツ信号と固有ジョセフソン接合装置と
を確実に結合させることができる単結晶固有ジョセフソ
ン接合テラヘルツ検出器を得ることができる。As described above in detail, according to the present invention, it is possible to obtain a single-crystal intrinsic Josephson junction terahertz detector which can reliably couple a terahertz signal and an intrinsic Josephson junction device. it can.
【図１】本発明の実施例を示すアンテナとｒｆチョーク
フィルタとともに集積された固有ジョセフソン接合装置
の概略図である。FIG. 1 is a schematic diagram of an intrinsic Josephson junction device integrated with an antenna and an rf choke filter showing an embodiment of the present invention.
【図２】本発明に係る固有ジョセフソン接合装置の製造
工程図である。FIG. 2 is a manufacturing process diagram of the unique Josephson bonding apparatus according to the present invention.
【図３】本発明に係る４μｍ×４μｍのａ−ｂ面の寸法
を持つ試料（ＢＳＣＣＯ単結晶）の電流−電圧特性を示
す図である。FIG. 3 is a diagram showing current-voltage characteristics of a sample (BSCCO single crystal) having an a-b plane dimension of 4 μm × 4 μm according to the present invention.
【図４】本発明に係る１．６ＴＨｚの照射下での電流−
電圧特性を示す図である。FIG. 4 shows the current under irradiation at 1.6 THz according to the present invention.
FIG. 4 is a diagram illustrating voltage characteristics.
１ シリコン基板 ２ ｒｆチョークフィルタ ３ 平面ボータイアンテナ ４ ＢＳＣＣＯ単結晶（固有ジョセフソン接合装置） ４Ａ 複数層 ４Ｂ 上部電極 ４Ｃ 下部電極 １１ 基板（例えば、シリコン基板） １２ ＢＳＣＣＯ単結晶 １３ 第１のフォトレジスト １４ 第１のイオンミリング １５ 第２のフォトレジスト １６ 第２のイオンミリング １７ 裏返したＢＳＣＣＯ単結晶片 １８ 新たな基板 １９ 第３のフォトレジスト ２０ 第３のイオンミリング ２１ 下部電極 ２２ 上部電極 Reference Signs List 1 silicon substrate 2 rf choke filter 3 plane bowtie antenna 4 BSCCO single crystal (intrinsic Josephson junction device) 4A multiple layers 4B upper electrode 4C lower electrode 11 substrate (for example, silicon substrate) 12 BSCCO single crystal 13 first photoresist 14 First ion milling 15 Second photoresist 16 Second ion milling 17 Inverted BSCCO single crystal piece 18 New substrate 19 Third photoresist 20 Third ion milling 21 Lower electrode 22 Upper electrode
Claims (2)
プロセスで作製された全超伝導Ｂｉ2 Ｓｒ2 ＣａＣｕ2
Ｏ8 単結晶固有ジョセフソン接合装置と、該ジョセフソ
ン接合装置に集積化されるアンテナを具備することを特
徴とする単結晶固有ジョセフソン接合テラヘルツ検出
器。1. A substrate and an all-superconducting Bi 2 Sr 2 CaCu 2 produced by a double-sided process mounted on the substrate.
A single crystal intrinsic Josephson junction terahertz detector comprising: an O 8 single crystal intrinsic Josephson junction apparatus; and an antenna integrated in the Josephson junction apparatus.
接合テラヘルツ検出器において、前記アンテナに接続さ
れるｒｆチョークフィルタが集積化されることを特徴と
する単結晶固有ジョセフソン接合テラヘルツ検出器。2. The single crystal intrinsic Josephson junction terahertz detector according to claim 1, wherein an rf choke filter connected to the antenna is integrated.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004092788A1 (en) | 2003-04-11 | 2004-10-28 | Riken | Tera-hertz wave transmitting optical component, tera-hertz wave optical system, tera-hertz band wave processing device and method |
| JP2012109652A (en) * | 2010-11-15 | 2012-06-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| JP2013004717A (en) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| CN105576115A (en) * | 2015-12-24 | 2016-05-11 | 南京大学 | Fabrication method of double-sided junction and high-temperature super-conduction Bi<2>Sr<2>CaCu<2>O<8+Delta> (BSCCO) terahertz source |
| CN107123730A (en) * | 2017-04-12 | 2017-09-01 | 南京大学 | A kind of Bi2Sr2CaCu2O8The preparation method of single Josephson surface knot |
| CN114039201A (en) * | 2021-11-10 | 2022-02-11 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223934A (en) * | 1997-02-07 | 1998-08-21 | Seiko Epson Corp | Superconducting device and manufacturing method |
| JPH1174573A (en) * | 1997-08-28 | 1999-03-16 | Matsushita Electric Ind Co Ltd | Superconductinc element circuit, its manufacture and superconducting device |
| JP2000091654A (en) * | 1998-09-10 | 2000-03-31 | Japan Science & Technology Corp | Manufacture of high-temperature single electron pair tunnel element using layered oxide superconducting material |
| JP2000216447A (en) * | 1999-01-26 | 2000-08-04 | Japan Science & Technology Corp | Manufacture of stereoscopic electronic element using anisotropic worked material and its manufacture device |
-
2001
- 2001-02-14 JP JP2001036427A patent/JP2002246664A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223934A (en) * | 1997-02-07 | 1998-08-21 | Seiko Epson Corp | Superconducting device and manufacturing method |
| JPH1174573A (en) * | 1997-08-28 | 1999-03-16 | Matsushita Electric Ind Co Ltd | Superconductinc element circuit, its manufacture and superconducting device |
| JP2000091654A (en) * | 1998-09-10 | 2000-03-31 | Japan Science & Technology Corp | Manufacture of high-temperature single electron pair tunnel element using layered oxide superconducting material |
| JP2000216447A (en) * | 1999-01-26 | 2000-08-04 | Japan Science & Technology Corp | Manufacture of stereoscopic electronic element using anisotropic worked material and its manufacture device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004092788A1 (en) | 2003-04-11 | 2004-10-28 | Riken | Tera-hertz wave transmitting optical component, tera-hertz wave optical system, tera-hertz band wave processing device and method |
| JP2012109652A (en) * | 2010-11-15 | 2012-06-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| JP2013004717A (en) * | 2011-06-16 | 2013-01-07 | Nippon Signal Co Ltd:The | Terahertz detector |
| CN105576115A (en) * | 2015-12-24 | 2016-05-11 | 南京大学 | Fabrication method of double-sided junction and high-temperature super-conduction Bi<2>Sr<2>CaCu<2>O<8+Delta> (BSCCO) terahertz source |
| CN105576115B (en) * | 2015-12-24 | 2018-04-17 | 南京大学 | A kind of preparation method of two-sided knot high-temperature superconductor BSCCO THz sources |
| CN107123730A (en) * | 2017-04-12 | 2017-09-01 | 南京大学 | A kind of Bi2Sr2CaCu2O8The preparation method of single Josephson surface knot |
| CN114039201A (en) * | 2021-11-10 | 2022-02-11 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
| CN114039201B (en) * | 2021-11-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
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