JP2003055046A - Piezoelectric ceramic composition, piezoelectric device using the same and producing method therefor - Google Patents
Piezoelectric ceramic composition, piezoelectric device using the same and producing method thereforInfo
- Publication number
- JP2003055046A JP2003055046A JP2001238765A JP2001238765A JP2003055046A JP 2003055046 A JP2003055046 A JP 2003055046A JP 2001238765 A JP2001238765 A JP 2001238765A JP 2001238765 A JP2001238765 A JP 2001238765A JP 2003055046 A JP2003055046 A JP 2003055046A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- piezoelectric
- weight
- main component
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は例えば圧電トランス
に用いる圧電磁器組成物およびこれを用いた圧電デバイ
スとその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a piezoelectric ceramic composition used for, for example, a piezoelectric transformer, a piezoelectric device using the same, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、圧電トランスなどの圧電デバイス
に用いる圧電磁器組成物としては、特開昭５６−３０７
１４号公報に示されるようにＰｂ（Ｚｎ1/3Ｎｂ2/3）Ｏ
3−ＰｂＴｉＯ3−ＰｂＺｒＯ3系組成物にＭｎＯ2を添加
したものが知られている。2. Description of the Related Art Conventionally, as a piezoelectric ceramic composition used for a piezoelectric device such as a piezoelectric transformer, Japanese Patent Laid-Open No. 56-307 is known.
Pb (Zn 1/3 Nb 2/3 ) O as disclosed in Japanese Patent No. 14
It is known that MnO 2 is added to a 3- PbTiO 3 -PbZrO 3 based composition.
【０００３】[0003]
【発明が解決しようとする課題】近年、圧電デバイスの
高出力化が求められている。これに対し上記圧電材料
は、高電界駆動に伴い機械的品質係数が非線形的に低下
し、内部エネルギー損失により急激に発熱する。そのた
め、大きな出力が得られないという問題点を有してい
た。In recent years, there has been a demand for higher output piezoelectric devices. On the other hand, the piezoelectric material has a non-linear reduction in mechanical quality coefficient as it is driven by a high electric field, and heat is rapidly generated due to internal energy loss. Therefore, there is a problem that a large output cannot be obtained.
【０００４】そこで本発明は高電界駆動時の機械的品質
係数の大きな圧電磁器組成物およびこれを用いた圧電デ
バイスとその製造方法を提供することを目的とするもの
である。Therefore, an object of the present invention is to provide a piezoelectric ceramic composition having a large mechanical quality factor when driven in a high electric field, a piezoelectric device using the same, and a method for manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、以下の構成を有するものである。In order to achieve the above object, it has the following constitution.
【０００６】本発明の請求項１に記載の発明は、主成分
（Ｐｂ1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/ 3）w（Ｓｎ1/3Ｎｂ
2/3）xＴｉyＺｒz｝Ｏ3（ただし、Ａはランタン系列か
ら選ばれる少なくとも一種以上の金属元素、０．８５≦
ｕ≦０．９９、０．９７≦ｖ≦１．０３、０．０１≦ｗ
≦０．２０、０．０１≦ｘ≦０．１５、０．３５≦ｙ≦
０．４８、０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ＋ｚ＝
１）に、副成分として前記主成分１００重量％に対しＭ
ｎをＭｎＯ2に換算して０．０５〜２．５重量％、Ｓｉ
をＳｉＯ2に換算して０．０１〜０．５重量％含有させ
たものであり、大きな機械的品質係数を有し、かつ高電
界駆動時の機械的品質係数の低下が小さいものである。[0006] According to a first aspect of the present invention, the main component (Pb 1-u A u) v {(Zn 1/3 Nb 2/3) w (Sn 1/3 Nb
2/3 ) x Ti y Zr z } O 3 (where A is at least one metal element selected from the lanthanum series, 0.85 ≦
u ≦ 0.99, 0.97 ≦ v ≦ 1.03, 0.01 ≦ w
≦ 0.20, 0.01 ≦ x ≦ 0.15, 0.35 ≦ y ≦
0.48, 0.30 ≦ z ≦ 0.50, w + x + y + z =
In 1), as an auxiliary component, M is added to 100% by weight of the main component.
Converting n to MnO 2 , 0.05 to 2.5% by weight, Si
Is contained in an amount of 0.01 to 0.5% by weight in terms of SiO 2 , and has a large mechanical quality factor and a small decrease in the mechanical quality factor during high electric field driving.
【０００７】本発明の請求項２に記載の発明は、特に、
主成分（Ｐｂ1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ
1/3Ｎｂ2/3）xＴｉyＺｒz｝Ｏ3（ただし、Ａはランタン
系列から選ばれる少なくとも一種以上の金属元素、０．
８５≦ｕ≦０．９９、０．９７≦ｖ≦１．０３、０．０
１≦ｗ≦０．２０、０．０１≦ｘ≦０．１５、０．３５
≦ｙ≦０．４８、０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ
＋ｚ＝１）に、副成分として前記主成分１００重量％に
対しＭｎをＭｎＯ2に換算して０．０５〜２．５重量
％、ＳｉをＳｉＯ2に換算して０．０１〜０．５重量％
含有させたもので圧電層を形成し、内部電極をＡｇを含
有する金属で形成した圧電デバイスであり、圧電層は大
きな機械的品質係数を有するので高出力を得ることがで
きる。The invention according to claim 2 of the present invention is
Main component (Pb 1-u A u ) v {(Zn 1/3 Nb 2/3 ) w (Sn
1/3 Nb 2/3 ) x Ti y Zr z } O 3 (where A is at least one metal element selected from the lanthanum series, 0.
85 ≦ u ≦ 0.99, 0.97 ≦ v ≦ 1.03, 0.0
1 ≦ w ≦ 0.20, 0.01 ≦ x ≦ 0.15, 0.35
≦ y ≦ 0.48, 0.30 ≦ z ≦ 0.50, w + x + y
+ Z = 1), Mn is converted to MnO 2 in an amount of 0.05 to 2.5% by weight, and Si is converted to SiO 2 to be in an amount of 0.01 to 0.5 with respect to 100% by weight of the main component as an auxiliary component. weight%
This is a piezoelectric device in which a piezoelectric layer is formed by containing it, and an internal electrode is formed of a metal containing Ag. The piezoelectric layer has a large mechanical quality factor, so that high output can be obtained.
【０００８】本発明の請求項３に記載の発明は、特に、
圧電層となる原料を９５０〜１０５０℃で仮焼した後シ
ート成形し、Ａｇを含有する内部電極と交互に積層し、
一体焼成することにより、Ａｇと圧電層を構成する原料
との反応を抑制し、所望の特性を有する圧電デバイスを
得ることができる。The invention according to claim 3 of the present invention is
A raw material to be a piezoelectric layer is calcined at 950 to 1050 ° C., then formed into a sheet, and alternately laminated with an internal electrode containing Ag,
By integrally firing, the reaction between Ag and the raw material forming the piezoelectric layer can be suppressed, and a piezoelectric device having desired characteristics can be obtained.
【０００９】本発明の請求項４に記載の発明は、特に、
圧電層となる原料を仮焼し、平均粒径０．４〜１．１μ
ｍに調整後、シート成形するものであり、低温で焼結す
るためＡｇを含有する内部電極との一体焼成がさらに容
易になる。The invention according to claim 4 of the present invention is
The raw material for the piezoelectric layer is calcined, and the average particle size is 0.4 to 1.1μ
After being adjusted to m, it is formed into a sheet, and since it is sintered at a low temperature, integral firing with the internal electrode containing Ag is further facilitated.
【００１０】本発明の請求項５に記載の発明は、特に、
Ｓｉ化合物以外の原料を仮焼し、仮焼後Ｓｉ化合物を添
加するものである。Ｓｉ化合物は高温で仮焼すると硬化
するため、後工程の作業が困難となるのでＳｉ化合物が
硬化しすぎないような温度で仮焼する必要が有る。しか
しながらＳｉ化合物を仮焼後に添加することにより、Ｓ
ｉ化合物を添加した時よりも高温で仮焼できるため、積
層体焼成時のＡｇと圧電層を構成する原料との反応を更
に抑制することができる。The invention according to claim 5 of the present invention is
Raw materials other than the Si compound are calcined, and the Si compound is added after the calcining. Since the Si compound is hardened when it is calcined at a high temperature, it becomes difficult to carry out the work in the subsequent steps, so that it is necessary to calcine the Si compound at a temperature at which the Si compound is not too hard. However, by adding a Si compound after calcination, S
Since the calcination can be performed at a higher temperature than when the i compound is added, it is possible to further suppress the reaction between Ag and the raw material forming the piezoelectric layer during firing of the laminate.
【００１１】本発明の請求項６に記載の発明は、特に、
平均粒径０．０５〜０．２μｍのＳｉ化合物を用いるも
のであり、仮焼体にＳｉ化合物を分散させやすくなる。The invention according to claim 6 of the present invention is
Since a Si compound having an average particle diameter of 0.05 to 0.2 μm is used, the Si compound can be easily dispersed in the calcined body.
【００１２】[0012]
【発明の実施の形態】（実施の形態１）以下、実施の形
態１を用いて、本発明の特に請求項１に記載の発明につ
いて説明する。BEST MODE FOR CARRYING OUT THE INVENTION (Embodiment 1) In the following, the invention described in claim 1 of the present invention will be described with reference to Embodiment 1.
【００１３】まず、出発原料として化学的に高純度のＰ
ｂＯ、Ｌａ2Ｏ3、Ｎｄ2Ｏ3、Ｐｒ2Ｏ3、Ｓｍ2Ｏ3、Ｚｎ
Ｏ、ＳｎＯ2、Ｎｂ2Ｏ5、ＴｉＯ2、ＺｒＯ2を組成式
（Ｐｂ 1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ1/3Ｎｂ
2/3）xＴｉyＺｒz｝Ｏ3において（表１）に示す組成と
なるように秤量する。また前記組成式で示した主成分１
００重量％に対し、副成分としてＳｉＯ2とＭｎＯ2を
（表１）に示す割合となるように秤量する。First, as a starting material, chemically highly pure P is used.
bO, La2O3, Nd2O3, Pr2O3, Sm2O3, Zn
O, SnO2, Nb2OFive, TiO2, ZrO2The composition formula
(Pb 1-uAu)v{(Zn1/3Nb2/3)w(Sn1/3Nb
2/3)xTiyZrz} O3And the composition shown in (Table 1)
Weigh so that In addition, the main component 1 shown in the above composition formula
SiO2 as an auxiliary component for 100% by weight2And MnO2To
Weigh so that the ratio shown in (Table 1) is obtained.
【００１４】[0014]
【表１】 [Table 1]
【００１５】次にこれらの原料をジルコニアボールを媒
介としてボールミルにより湿式混合した。尚、出発原料
として前述した各成分元素の酸化物以外に水酸化物、炭
酸塩、アルコキシド等焼結後の組成が（表１）に示すよ
うになるのであればいずれを用いてもよい。Next, these raw materials were wet mixed by a ball mill using zirconia balls as a medium. In addition to the oxides of the above-mentioned respective component elements, any of the above-mentioned oxides of the respective components may be used as the starting material as long as the composition after sintering such as hydroxide, carbonate and alkoxide is as shown in Table 1.
【００１６】また試料番号の右に記された（＊）は本発
明の特許請求の範囲外の比較例の試料であることを示
す。The mark (*) on the right of the sample number indicates that the sample is a comparative example outside the scope of the claims of the present invention.
【００１７】次に得られた混合物をボールミルから取り
出して乾燥した後、空気中において９５０〜１０５０℃
で２時間仮焼した。Next, the obtained mixture was taken out from the ball mill and dried, and then in air at 950 to 1050 ° C.
It was calcined for 2 hours.
【００１８】次に得られた仮焼粉体を湿式粉砕し、粉砕
泥しょうを乾燥した後、ポリビニールアルコール溶液を
添加して造粒した。Next, the obtained calcined powder was wet pulverized, the pulverized slurry was dried, and then a polyvinyl alcohol solution was added to granulate.
【００１９】次に得られた造粒粉体を、金型とプレスを
用いて直径２０ｍｍ、厚さ約２ｍｍの円板に成形した。Next, the obtained granulated powder was molded into a disk having a diameter of 20 mm and a thickness of about 2 mm by using a mold and a press.
【００２０】次に得られた成形体を、空気中において７
００℃で１時間保持してバインダーアウトを行った後、
空気中において１０００〜１２００℃で２時間保持して
焼成した。Next, the obtained molded body was placed in air for 7 days.
After holding at 00 ° C for 1 hour to perform binder out,
Firing was carried out by holding in air at 1000 to 1200 ° C. for 2 hours.
【００２１】次に得られた焼成体を直径約１６ｍｍ、厚
さ１ｍｍの円板に加工した後、その両主面に銀電極を焼
き付け、１００℃の絶縁油中で３ｋＶ／ｍｍの直流電界
を印加して分極処理を施した。Next, the fired body obtained was processed into a disk having a diameter of about 16 mm and a thickness of 1 mm, and silver electrodes were baked on both main surfaces thereof, and a DC electric field of 3 kV / mm was applied in insulating oil at 100 ° C. It was applied and polarized.
【００２２】次いで得られた円板試料の直径方向の振動
の機械的品質係数Ｑｍをインピーダンスアナライザーを
用いた共振***振法による測定から求め、（表１）に印
加電圧が５ＶのときのＱｍ値を示した。Next, the mechanical quality factor Qm of the vibration in the diameter direction of the obtained disk sample was obtained from the measurement by the resonance anti-resonance method using an impedance analyzer, and (Table 1) shows the Qm value when the applied voltage is 5V. showed that.
【００２３】（表１）に示す結果から明らかなように、
本発明の実施の形態１における圧電磁器組成物に対応す
る試料は、高電界駆動時（５Ｖ）に１１００以上の高い
Ｑｍ値を示している。これに対し、（＊）を付した本発
明範囲外の比較例試料は高電界駆動時のＱｍ値が１００
０以下と小さい。As is clear from the results shown in (Table 1),
The sample corresponding to the piezoelectric ceramic composition according to the first embodiment of the present invention exhibits a high Qm value of 1100 or more when driven by a high electric field (5 V). On the other hand, the comparative samples with an asterisk (*) out of the range of the present invention had a Qm value of 100 when driven in a high electric field.
It is as small as 0 or less.
【００２４】また本発明の圧電磁器組成物は、（表１）
に示すように１１５０℃でも十分な焼結性を有するもの
であり、例えばＡｇ−Ｐｄ電極との同時焼成も可能なも
のである。Further, the piezoelectric ceramic composition of the present invention is (Table 1)
As shown in (1), it has sufficient sinterability even at 1150 ° C., and can be co-fired with, for example, an Ag—Pd electrode.
【００２５】以上のように本実施の形態１における圧電
磁器組成物は、主成分（Ｐｂ1-uＡu）v｛（Ｚｎ1/3Ｎｂ
2/3）w（Ｓｎ1/3Ｎｂ2/3）xＴｉyＺｒz｝Ｏ3（ただし、
Ａはランタン系列から選ばれる少なくとも一種以上の金
属元素で、０．８５≦ｕ≦０．９９、０．９７≦ｖ≦
１．０３、０．０１≦ｗ≦０．２０、０．０１≦ｘ≦
０．１５、０．３５≦ｙ≦０．４８、０．３０≦ｚ≦
０．５０、ｗ＋ｘ＋ｙ＋ｚ＝１）に、副成分として前記
主成分１００重量％に対しＭｎをＭｎＯ2に換算して
０．０５〜２．５重量％、ＳｉをＳｉＯ2に換算して
０．０１〜０．５重量％含有させたものであり、大きな
機械的品質係数を有し、かつ高電界駆動時の機械的品質
係数の低下が小さいという効果を奏するものである。As described above, the piezoelectric ceramic composition according to the first embodiment has the main component (Pb 1 -u A u ) v {(Zn 1/3 Nb
2/3 ) w (Sn 1/3 Nb 2/3 ) x Ti y Zr z } O 3 (however,
A is at least one metal element selected from the lanthanum series, and 0.85 ≦ u ≦ 0.99, 0.97 ≦ v ≦
1.03, 0.01 ≦ w ≦ 0.20, 0.01 ≦ x ≦
0.15, 0.35 ≦ y ≦ 0.48, 0.30 ≦ z ≦
0.50, w + x + y + z = 1), and Mn is converted to MnO 2 in an amount of 0.05 to 2.5% by weight and Si is converted to SiO 2 to be 0.01 to 0.01% with respect to 100% by weight of the main component as an auxiliary component. .About.0.5% by weight, and has an effect of having a large mechanical quality factor and a small decrease in the mechanical quality factor during high electric field driving.
【００２６】尚、上記実施の形態１で示した（表１）の
組成は一例であり、上記組成を満たす圧電磁器組成物で
あれば本発明の目的を達成するものである。The composition of Table 1 shown in the first embodiment is an example, and any piezoelectric ceramic composition satisfying the above composition achieves the object of the present invention.
【００２７】（実施の形態２）以下、実施の形態２を用
いて、本発明の特に請求項２、３、４に記載の発明につ
いて説明する。(Embodiment 2) In the following, Embodiment 2 will be used to explain the invention particularly set forth in claims 2, 3, and 4.
【００２８】図１は本発明の実施の形態２における圧電
デバイスである圧電トランスの斜視図、図２は図１のＡ
−Ｂ間の断面図、図３は図１のＣ−Ｄ間の断面図であ
り、１は積層体、２ａ，２ｂは内部電極、３ａ，３ｂは
入力電極となる外部電極、４ａ，４ｂは出力電極となる
外部電極を示す。以上のように構成された圧電トランス
について以下に説明する。FIG. 1 is a perspective view of a piezoelectric transformer which is a piezoelectric device according to a second embodiment of the present invention, and FIG. 2 is A in FIG.
-B is a cross-sectional view, FIG. 3 is a cross-sectional view between C-D of FIG. 1, 1 is a laminated body, 2a and 2b are internal electrodes, 3a and 3b are external electrodes serving as input electrodes, 4a and 4b are The external electrode used as an output electrode is shown. The piezoelectric transformer configured as above will be described below.
【００２９】まず、出発原料として化学的に高純度のＰ
ｂＯ、Ｌａ2Ｏ3、Ｎｄ2Ｏ3、Ｐｒ2Ｏ3、Ｓｍ2Ｏ3、Ｚｎ
Ｏ、ＳｎＯ2、Ｎｂ2Ｏ5、ＴｉＯ2、ＺｒＯ2を組成式
（Ｐｂ 1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ1/3Ｎｂ
2/3）xＴｉyＺｒz｝Ｏ3において（表２）に示す組成と
なるように秤量する。First, as a starting material, chemically high purity P is used.
bO, La2O3, Nd2O3, Pr2O3, Sm2O3, Zn
O, SnO2, Nb2OFive, TiO2, ZrO2The composition formula
(Pb 1-uAu)v{(Zn1/3Nb2/3)w(Sn1/3Nb
2/3)xTiyZrz} O3And the composition shown in (Table 2)
Weigh so that
【００３０】[0030]
【表２】 [Table 2]
【００３１】また前記組成式で示した主成分１００重量
％に対し、副成分としてＳｉＯ2とＭｎＯ2を（表２）に
示す割合となるように秤量する。Further, SiO 2 and MnO 2 as auxiliary components are weighed so that the ratios shown in Table 2 are based on 100% by weight of the main component shown in the above composition formula.
【００３２】尚、実施の形態１と同様に出発原料として
前述した各成分元素の酸化物以外に水酸化物、炭酸塩、
アルコキシド等焼結後の組成が（表２）に示すようにな
るのであればいずれを用いてもよい。As in the first embodiment, as a starting material, in addition to the oxides of the above-mentioned respective component elements, hydroxide, carbonate,
Any material such as alkoxide may be used as long as the composition after sintering is as shown in (Table 2).
【００３３】また試料番号の右に記された（＊）は本発
明の特許請求の範囲外の比較例の試料であることを示
す。The mark (*) on the right side of the sample number indicates that the sample is a comparative example outside the scope of the claims of the present invention.
【００３４】次に、実施の形態１と同様に上記原料を湿
式混合し、得られた混合物をボールミルから取り出して
乾燥した後、空気中において９５０〜１０５０℃で２時
間仮焼した。次に得られた仮焼体をボールミルにより湿
式混合および湿式粉砕をし、得られた粉砕泥しょうをボ
ールミルから取り出して乾燥した後、これにバインダー
と可塑剤および溶剤を添加してスラリーにし、ドクター
ブレード法によりシート成形してグリーンシートを作製
した。このグリーンシートを矩形形状に切断した後、上
面に内部電極２ａ，２ｂとしてＡｇ：Ｐｄ＝７０：３０
のＡｇ−Ｐｄペーストをスクリーン印刷した。Next, as in the first embodiment, the above raw materials were wet mixed, the resulting mixture was taken out from the ball mill, dried, and then calcined in air at 950 to 1050 ° C. for 2 hours. Next, the obtained calcined body is wet-mixed and pulverized by a ball mill, and the obtained pulverized mud is taken out from the ball mill and dried, and then a binder, a plasticizer and a solvent are added to form a slurry, and a doctor is used. A green sheet was produced by forming the sheet by the blade method. After cutting this green sheet into a rectangular shape, Ag: Pd = 70: 30 is formed on the upper surface as internal electrodes 2a and 2b.
The Ag-Pd paste of was printed by screen printing.
【００３５】上記のようにして得た内部電極２ａ，２ｂ
を印刷したグリーンシートと内部電極なしのグリーンシ
ートとを適宜、複数枚重ねてプレス後切断し、グリーン
積層体を作製した。ここで内部電極２ａ，２ｂは、前記
グリーン積層体の短手方向の両端面に一層毎に交互に露
出するようにした。このグリーン積層体を空気中におい
て５００℃でバインダーアウトを行った後、空気中にお
いて１０２５〜１１００℃で２時間保持して一体焼成
し、ほぼ直方体状の圧電トランスの形状を持った積層体
１を作製した。The internal electrodes 2a, 2b obtained as described above
A plurality of green sheets printed with and green sheets without internal electrodes were appropriately stacked, pressed and then cut to prepare a green laminate. Here, the internal electrodes 2a and 2b were alternately exposed on both end faces in the lateral direction of the green laminated body, layer by layer. This green laminated body was subjected to binder out in air at 500 ° C., then held in air at 1025 to 1100 ° C. for 2 hours to be integrally fired to obtain a laminated body 1 having a substantially rectangular parallelepiped piezoelectric transformer shape. It was made.
【００３６】次に得られた積層体１の内部電極２ａ，２
ｂの露出した面に外部電極３ａ，３ｂを、積層体１の長
手方向の端面に外部電極４ａ，４ｂを銀焼付により形成
した。次に１００℃の絶縁油中で３ｋＶ／ｍｍの直流電
界を印加して、内部電極２ａ，２ｂに挟まれた圧電層を
積層体１の厚み方向に分極処理を施し、さらに外部電極
３ａと４ａ、３ｂと４ｂ間で積層体１の長手方向に分極
処理を施した。Next, the internal electrodes 2a, 2 of the obtained laminated body 1
The external electrodes 3a and 3b were formed on the exposed surface of b, and the external electrodes 4a and 4b were formed on the end faces of the laminate 1 in the longitudinal direction by silver baking. Next, a DC electric field of 3 kV / mm is applied in insulating oil at 100 ° C., the piezoelectric layer sandwiched between the internal electrodes 2a and 2b is polarized in the thickness direction of the laminate 1, and the external electrodes 3a and 4a are further polarized. Polarization treatment was performed in the longitudinal direction of the laminate 1 between 3b and 4b.
【００３７】こうして得られた圧電トランスの入力電力
と出力電力の損失の度合いを示す効率（％）を（表２）
に示す。The efficiency (%) showing the degree of loss of input power and output power of the piezoelectric transformer thus obtained is shown in Table 2
Shown in.
【００３８】（表２）に示す結果から明らかなように、
本発明の実施の形態２における圧電トランスは９０％以
上の高い効率を示す。またこのように１１５０℃未満の
焼成温度で高い効率を示すため、融点の低いＡｇ−Ｐｄ
を内部電極２ａ，２ｂとして用いることができる。As is clear from the results shown in (Table 2),
The piezoelectric transformer according to the second embodiment of the present invention exhibits a high efficiency of 90% or more. In addition, since high efficiency is exhibited at a firing temperature of less than 1150 ° C, Ag-Pd having a low melting point is used.
Can be used as the internal electrodes 2a and 2b.
【００３９】以上のように本実施の形態２における圧電
デバイス及びその製造方法は、圧電層が大きな機械的品
質係数を有するので、高出力の圧電デバイスを得るとい
う効果を奏するものである。As described above, the piezoelectric device and the manufacturing method thereof according to the second embodiment have an effect of obtaining a high-output piezoelectric device because the piezoelectric layer has a large mechanical quality factor.
【００４０】また特に圧電層となる原料を９５０〜１０
５０℃で仮焼し、ある程度反応させておくことにより、
グリーン積層体を焼成する際、内部電極２ａ，２ｂと圧
電層との反応が抑制され、所望の特性を有する圧電デバ
イスを得ることができる。In particular, the raw material for the piezoelectric layer is 950 to 10
By calcining at 50 ° C and allowing it to react to some extent,
When firing the green laminated body, the reaction between the internal electrodes 2a and 2b and the piezoelectric layer is suppressed, and a piezoelectric device having desired characteristics can be obtained.
【００４１】尚、外部電極３ａ，３ｂ，４ａ，４ｂの形
成前の積層体１について、厚さの最大値をｔmax、最小
値をｔminとしたとき、１００×（ｔmax−ｔmin）／ｔ
min（％）を求め、これを寸法精度として評価したもの
を図４に示した。この結果から明らかなように本発明の
実施の形態２における圧電トランスは、特に、圧電層と
なる原料を９５０℃以上で仮焼し、ある程度反応させて
からグリーンシートを作製することにより、グリーン積
層体を焼成する際の収縮が抑制されるため、寸法精度の
良い積層構造の圧電トランスが得られる。一方、仮焼温
度が１０５０℃を超えるとＰｂ成分の蒸発の影響で圧電
特性が低下するため好ましくない。従って、仮焼温度は
９５０〜１０５０℃とすることが好ましい。Regarding the laminated body 1 before the formation of the external electrodes 3a, 3b, 4a, 4b, where the maximum thickness is t max and the minimum thickness is t min , 100 × (t max −t min ) / T
Fig. 4 shows the min (%) obtained and evaluated as the dimensional accuracy. As is clear from this result, in the piezoelectric transformer according to the second embodiment of the present invention, in particular, the raw material to be the piezoelectric layer is calcined at 950 ° C. or higher, and after reacting to some extent, a green sheet is produced, thereby forming a green laminated sheet. Since shrinkage during firing of the body is suppressed, a piezoelectric transformer having a laminated structure with good dimensional accuracy can be obtained. On the other hand, if the calcination temperature exceeds 1050 ° C., the piezoelectric characteristics deteriorate due to the effect of evaporation of the Pb component, which is not preferable. Therefore, the calcination temperature is preferably 950 to 1050 ° C.
【００４２】また（表２）に示した試料番号３２の組成
について、仮焼体を粉砕した時の平均粒径を検討した結
果を図５に示す。試料番号３２の圧電体は、焼結体密度
が７８００ｋｇ／ｍ3以上であると焼結性に優れたもの
となる。また本実施の形態２において、内部電極２ａ，
２ｂとして用いたＡｇ−Ｐｄは１１００℃以下で焼成す
ることが望ましい。従って図５によると平均粒径を１．
１μｍの場合は、優れた特性の圧電トランスを得るため
に焼成温度を１１００℃とすることが望ましい。平均粒
径が０．４μｍの場合は１０５０℃に下げることができ
る。このように仮焼体の平均粒径を小さくすることによ
り、焼成温度を下げることができる。焼成温度を下げる
ことができると、内部電極２ａ，２ｂとして融点の低
い、銀を含有する金属の使用範囲を広げることができる
のである。Further, with respect to the composition of sample No. 32 shown in (Table 2), the result of examining the average particle size when the calcined body was crushed is shown in FIG. The piezoelectric body of Sample No. 32 has excellent sinterability when the sintered body density is 7800 kg / m 3 or more. In the second embodiment, the internal electrodes 2a,
The Ag-Pd used as 2b is preferably fired at 1100 ° C or lower. Therefore, according to FIG. 5, the average particle size is 1.
In the case of 1 μm, it is desirable to set the firing temperature to 1100 ° C. in order to obtain a piezoelectric transformer having excellent characteristics. When the average particle size is 0.4 μm, it can be lowered to 1050 ° C. By thus reducing the average particle size of the calcined body, the firing temperature can be lowered. If the firing temperature can be lowered, the range of use of the metal containing silver having a low melting point as the internal electrodes 2a and 2b can be expanded.
【００４３】しかしながら、平均粒径が１．１μｍより
も大きいと焼成温度を１１００℃よりも高くしなければ
圧電層は焼結性が不十分となり、焼成温度を１１００℃
よりも高くすると、内部電極２ａ，２ｂが溶解してしま
う。これを防ぐには内部電極２ａ，２ｂのＰｄ比率を上
げれば良いのであるが、内部電極２ａ，２ｂのコストが
上がってしまう。However, if the average particle size is larger than 1.1 μm, the sinterability of the piezoelectric layer becomes insufficient unless the firing temperature is set higher than 1100 ° C., and the firing temperature is 1100 ° C.
If it is higher than this, the internal electrodes 2a and 2b will be dissolved. To prevent this, the Pd ratio of the internal electrodes 2a and 2b should be increased, but the cost of the internal electrodes 2a and 2b will increase.
【００４４】また、平均粒径が０．４μｍ未満では、通
常の方法では成形が困難になり好ましくない。従ってＡ
ｇの含有率の高い金属を内部電極２ａ，２ｂとして用い
るため、仮焼体の平均粒径は０．４〜１．１μｍとする
ことが好ましい。On the other hand, if the average particle size is less than 0.4 μm, it becomes difficult to mold by an ordinary method, which is not preferable. Therefore A
Since a metal having a high g content is used as the internal electrodes 2a and 2b, the average particle size of the calcined body is preferably 0.4 to 1.1 μm.
【００４５】このことは、試料番号３２の組成を有する
圧電体だけでなく、本発明の他の組成の圧電体において
も同様のことが言える。The same can be said for not only the piezoelectric body having the composition of sample No. 32 but also the piezoelectric body having the other composition of the present invention.
【００４６】（実施の形態３）以下、実施の形態３を用
いて、本発明の特に請求項５、６に記載の発明について
説明する。(Third Embodiment) The third embodiment of the present invention will be described below with reference to claims 5 and 6 of the present invention.
【００４７】まず実施の形態２の（表２）に示した試料
番号３２の組成となるように秤量した出発原料におい
て、ＳｉＯ2以外の出発原料をジルコニアボールを用い
たボールミルにより湿式混合した。得られた混合物をボ
ールミルから取り出して乾燥した後、空気中において９
５０〜１０５０℃で２時間仮焼した。得られた仮焼体
と、特に平均粒径０．０５〜０．２μｍのＳｉＯ2を前
述したボールミルにより湿式混合および湿式粉砕をし、
以後、実施の形態２と同様にして積層構造の圧電トラン
スを作製した。First, of the starting materials weighed so as to have the composition of sample No. 32 shown in (Table 2) of the second embodiment, the starting materials other than SiO 2 were wet mixed by a ball mill using zirconia balls. The obtained mixture was taken out of the ball mill and dried, and then dried in air at 9
It was calcined at 50 to 1050 ° C. for 2 hours. The obtained calcined body and, particularly, SiO 2 having an average particle size of 0.05 to 0.2 μm are wet-mixed and pulverized by the ball mill described above,
After that, a piezoelectric transformer having a laminated structure was manufactured in the same manner as in the second embodiment.
【００４８】ＳｉＯ2を最初の原料混合の時点で入れた
場合、９５０℃以上の高温で仮焼した場合に仮焼体の硬
化が著しく、その後の粉砕が通常の方法では困難となる
ため、粉砕方法を変えない限り有効な仮焼成温度の範囲
（９５０〜１０５０℃）での仮焼が困難である。一方、
仮焼後にＳｉＯ2を添加することにより仮焼体の硬化が
あまり進まないため、通常の粉砕方法のままで粉砕が可
能となる。従って、ＳｉＯ2以外の原料を仮焼した後、
ＳｉＯ2を添加することが望ましい。When SiO 2 is added at the time of the first raw material mixing, the calcined body is significantly hardened when it is calcined at a high temperature of 950 ° C. or higher, and the subsequent pulverization becomes difficult by the usual method. Unless the method is changed, it is difficult to perform calcination within an effective calcination temperature range (950 to 1050 ° C). on the other hand,
By adding SiO 2 after the calcination, the calcination body does not harden so much, so that the pulverization can be performed with the usual pulverization method. Therefore, after calcination of raw materials other than SiO 2 ,
It is desirable to add SiO 2 .
【００４９】尚ＳｉＯ2を均一に拡散させ反応させるに
は、平均粒径０．２μｍ以下のＳｉＯ2を使用して混合
することが望ましい。しかしながら０．０５μｍ未満に
なると逆に凝集が起こり分散性が悪くなる。従ってＳｉ
Ｏ2は平均粒径０．０５〜０．２μｍのものを用いるこ
とが好ましい。[0049] are reacted to uniformly diffuse the SiO 2 addition, it is desirable to mix using a mean particle size 0.2μm or less of SiO 2. However, when the thickness is less than 0.05 μm, on the contrary, aggregation occurs and the dispersibility deteriorates. Therefore Si
O 2 having an average particle diameter of 0.05 to 0.2 μm is preferably used.
【００５０】以上のように本実施の形態３における圧電
デバイスの製造方法は、Ｓｉ化合物を仮焼後に添加する
ことにより、通常の粉砕方法のままでもＳｉ化合物を始
めから添加した時よりも高温で仮焼できるため、グリー
ン積層体の焼成時の内部電極２ａ，２ｂと圧電層を構成
する原料との反応を更に抑制することができるという効
果を奏するものである。As described above, in the method of manufacturing the piezoelectric device according to the third embodiment, the Si compound is added after the calcination so that the Si compound is added at a higher temperature than when the Si compound is added from the beginning even with the usual crushing method. Since it can be calcined, there is an effect that the reaction between the internal electrodes 2a and 2b and the raw material forming the piezoelectric layer during firing of the green laminated body can be further suppressed.
【００５１】また特に、平均粒径０．０５〜０．２μｍ
のＳｉ化合物を用いることにより、仮焼体にＳｉ化合物
を分散させやすくなるという効果も奏する。In particular, the average particle size is 0.05 to 0.2 μm.
The use of the Si compound also has the effect of making it easier to disperse the Si compound in the calcined body.
【００５２】なお、実施の形態３においては、一つの圧
電トランスについてのみ説明したが、上記以外にも本発
明の範囲内の組成の圧電層を有する圧電トランスであれ
ば同様の効果が得られる。Although only one piezoelectric transformer has been described in the third embodiment, the same effect can be obtained with a piezoelectric transformer having a piezoelectric layer having a composition within the scope of the present invention in addition to the above.
【００５３】また、実施の形態２，３においては、本発
明の圧電磁器組成物を用いた圧電トランスを説明した
が、本発明の圧電磁器組成物の適用は、圧電トランスに
限定されるものではなく、超音波振動子、アクチュエー
タをはじめとする多くの圧電デバイスに対して適用でき
るものである。Although the piezoelectric transformer using the piezoelectric ceramic composition of the present invention has been described in the second and third embodiments, the application of the piezoelectric ceramic composition of the present invention is not limited to the piezoelectric transformer. Instead, it can be applied to many piezoelectric devices such as ultrasonic transducers and actuators.
【００５４】[0054]
【発明の効果】以上のように本発明は、主成分（Ｐｂ
1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ 1/3Ｎｂ2/3）x
ＴｉyＺｒz｝Ｏ3（ただし、Ａはランタン系列から選ば
れる少なくとも一種以上の金属元素で、０．８５≦ｕ≦
０．９９、０．９７≦ｖ≦１．０３、０．０１≦ｗ≦
０．２０、０．０１≦ｘ≦０．１５、０．３５≦ｙ≦
０．４８、０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ＋ｚ＝
１）に、副成分として前記主成分１００重量％に対しＭ
ｎをＭｎＯ2に換算して０．０５〜２．５重量％、Ｓｉ
をＳｉＯ2に換算して０．０１〜０．５重量％含有させ
た圧電磁器組成物であり、大きな機械的品質係数を有
し、かつ高電界駆動時の機械的品質係数の低下が小さい
という効果を奏するものである。As described above, according to the present invention, the main component (Pb
1-uAu)v{(Zn1/3Nb2/3)w(Sn 1/3Nb2/3)x
TiyZrz} O3(However, A is selected from the lantern series
At least one kind of metal element, 0.85 ≦ u ≦
0.99, 0.97 ≦ v ≦ 1.03, 0.01 ≦ w ≦
0.20, 0.01 ≦ x ≦ 0.15, 0.35 ≦ y ≦
0.48, 0.30 ≦ z ≦ 0.50, w + x + y + z =
In 1), M is added as an auxiliary component to 100% by weight of the main component.
n is MnO20.05 to 2.5% by weight, Si
SiO2In 0.01 to 0.5% by weight
Piezoelectric ceramic composition with a large mechanical quality factor
And the deterioration of the mechanical quality factor during high electric field driving is small.
That is the effect.
【図１】本発明の実施の形態２における圧電トランスの
斜視図FIG. 1 is a perspective view of a piezoelectric transformer according to a second embodiment of the present invention.
【図２】図１のＡ−Ｂ間の断面図FIG. 2 is a sectional view taken along the line AB in FIG.
【図３】図１のＣ−Ｄ間の断面図FIG. 3 is a sectional view taken along the line C-D in FIG.
【図４】本発明の実施の形態２における積層体の仮焼温
度と寸法精度の関係を示した図FIG. 4 is a diagram showing a relationship between calcination temperature and dimensional accuracy of a laminated body according to the second embodiment of the present invention.
【図５】本発明の実施の形態２における積層体の焼成温
度と焼結体密度の関係を示した図FIG. 5 is a diagram showing a relationship between a firing temperature and a sintered body density of a laminated body according to the second embodiment of the present invention.
１ 積層体 ２ａ 内部電極 ２ｂ 内部電極 ３ａ 外部電極 ３ｂ 外部電極 ４ａ 外部電極 ４ｂ 外部電極 1 stack 2a Internal electrode 2b internal electrode 3a External electrode 3b External electrode 4a External electrode 4b External electrode
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4G031 AA07 AA11 AA12 AA14 AA19 AA26 AA30 AA31 AA32 AA39 BA10 CA03 GA01 GA03 ─────────────────────────────────────────────────── ─── Continued front page F term (reference) 4G031 AA07 AA11 AA12 AA14 AA19 AA26 AA30 AA31 AA32 AA39 BA10 CA03 GA01 GA03
Claims (6)
2/3）w（Ｓｎ1/3Ｎｂ2 /3）xＴｉyＺｒz｝Ｏ3（ただし、
Ａはランタン系列から選ばれる少なくとも一種以上の金
属元素で、０．８５≦ｕ≦０．９９、０．９７≦ｖ≦
１．０３、０．０１≦ｗ≦０．２０、０．０１≦ｘ≦
０．１５、０．３５≦ｙ≦０．４８、０．３０≦ｚ≦
０．５０、ｗ＋ｘ＋ｙ＋ｚ＝１）に、副成分として前記
主成分１００重量％に対しＭｎをＭｎＯ2に換算して
０．０５〜２．５重量％、ＳｉをＳｉＯ2に換算して
０．０１〜０．５重量％含有させた圧電磁器組成物。 1. A main component (Pb 1-u A u ) v {(Zn 1/3 Nb
2/3) w (Sn 1/3 Nb 2 /3) x Ti y Zr z} O 3 ( where
A is at least one metal element selected from the lanthanum series, and 0.85 ≦ u ≦ 0.99, 0.97 ≦ v ≦
1.03, 0.01 ≦ w ≦ 0.20, 0.01 ≦ x ≦
0.15, 0.35 ≦ y ≦ 0.48, 0.30 ≦ z ≦
0.50, w + x + y + z = 1), and Mn is converted to MnO 2 in an amount of 0.05 to 2.5% by weight and Si is converted to SiO 2 to be 0.01 to 0.01% with respect to 100% by weight of the main component as an auxiliary component. A piezoelectric ceramic composition containing 0.5% by weight.
この内部電極が表面に露出するように交互に積層した積
層体と、この積層体の前記内部電極の露出した面に設け
た外部電極とを備え、前記圧電層は主成分（Ｐｂ
1-uＡu）v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ1/3Ｎｂ2/3）x
ＴｉyＺｒz｝Ｏ3（ただし、Ａはランタン系列から選ば
れる少なくとも一種以上の金属元素で、０．８５≦ｕ≦
０．９９、０．９７≦ｖ≦１．０３、０．０１≦ｗ≦
０．２０、０．０１≦ｘ≦０．１５、０．３５≦ｙ≦
０．４８、０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ＋ｚ＝
１）に、副成分として前記主成分１００重量％に対しＭ
ｎをＭｎＯ2に換算して０．０５〜２．５重量％、Ｓｉ
をＳｉＯ2に換算して０．０１〜０．５重量％含有させ
た圧電磁器組成物からなる圧電デバイス。2. A laminated body in which a piezoelectric layer and an internal electrode containing Ag are alternately laminated so that the internal electrode is exposed on the surface, and an external surface provided on the exposed surface of the internal electrode of the laminated body. An electrode, and the piezoelectric layer comprises a main component (Pb
1-u A u ) v {(Zn 1/3 Nb 2/3 ) w (Sn 1/3 Nb 2/3 ) x
Ti y Zr z } O 3 (where A is at least one metal element selected from the lanthanum series, and 0.85 ≦ u ≦
0.99, 0.97 ≦ v ≦ 1.03, 0.01 ≦ w ≦
0.20, 0.01 ≦ x ≦ 0.15, 0.35 ≦ y ≦
0.48, 0.30 ≦ z ≦ 0.50, w + x + y + z =
In 1), as an auxiliary component, M is added to 100% by weight of the main component.
Converting n to MnO 2 , 0.05 to 2.5% by weight, Si
A piezoelectric device comprising a piezoelectric ceramic composition containing 0.01 to 0.5% by weight of SiO 2 converted to SiO 2 .
列の金属元素から選ばれる一種類以上の元素）、Ｚｎ化
合物、Ｎｂ化合物、Ｓｎ化合物、Ｔｉ化合物、Ｚｒ化合
物、Ｍｎ化合物、Ｓｉ化合物を混合、仮焼して仮焼体を
得る第１の工程と、次にこの仮焼体を用いてセラミック
シートを作製する第２の工程と、次に前記セラミックシ
ートとＡｇを含有する内部電極とを交互に前記内部電極
の端部が表面に露出するように積層して積層体を得る第
３の工程と、次いでこの積層体を焼成して前記内部電極
の露出した面に外部電極を形成する第４の工程とを備
え、前記セラミックシートは主成分（Ｐｂ1-uＡu）
v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ1/ 3Ｎｂ2/3）xＴｉyＺｒ
z｝Ｏ3（ただし、Ａはランタン系列から選ばれる少なく
とも一種以上の金属元素で、０．８５≦ｕ≦０．９９、
０．９７≦ｖ≦１．０３、０．０１≦ｗ≦０．２０、
０．０１≦ｘ≦０．１５、０．３５≦ｙ≦０．４８、
０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ＋ｚ＝１）に副成
分として前記主成分１００重量％に対しＭｎをＭｎＯ2
に換算して０．０５〜２．５重量％、ＳｉをＳｉＯ2に
換算して０．０１〜０．５重量％含有させた圧電磁器組
成物であり、前記第１の工程における仮焼温度は９５０
〜１０５０℃である圧電デバイスの製造方法。3. A Pb compound, an A compound (A is one or more kinds of elements selected from lanthanum series metal elements), a Zn compound, an Nb compound, a Sn compound, a Ti compound, a Zr compound, a Mn compound, and a Si compound are mixed. , A first step of calcination to obtain a calcinated body, a second step of producing a ceramic sheet using this calcinated body, and then an internal electrode containing the ceramic sheet and Ag. A third step of alternately laminating the internal electrodes so that the end portions are exposed on the surface to obtain a laminated body, and then firing the laminated body to form external electrodes on the exposed surfaces of the internal electrodes. 4), and the ceramic sheet is the main component (Pb 1 -u A u ).
v {(Zn 1/3 Nb 2/3) w (Sn 1/3 Nb 2/3) x Ti y Zr
z } O 3 (where A is at least one metal element selected from the lanthanum series, 0.85 ≦ u ≦ 0.99,
0.97 ≦ v ≦ 1.03, 0.01 ≦ w ≦ 0.20,
0.01 ≦ x ≦ 0.15, 0.35 ≦ y ≦ 0.48,
0.30 ≦ z ≦ 0.50, w + x + y + z = 1), and Mn is MnO 2 with respect to 100% by weight of the main component as an auxiliary component.
The composition is a piezoelectric ceramic composition containing 0.05 to 2.5% by weight of Si and 0.01 to 0.5% by weight of Si converted to SiO 2 , and the calcination temperature in the first step. Is 950
A method for manufacturing a piezoelectric device having a temperature of 1050 ° C.
均粒径０．４〜１．１μｍに調整する工程を設ける請求
項３に記載の圧電デバイスの製造方法。4. The method for manufacturing a piezoelectric device according to claim 3, further comprising a step of adjusting the calcined body to have an average particle size of 0.4 to 1.1 μm after the first step and before the second step.
列の金属元素から選ばれる一種類以上の元素）、Ｚｎ化
合物、Ｎｂ化合物、Ｓｎ化合物、Ｔｉ化合物、Ｚｒ化合
物、Ｍｎ化合物を混合、仮焼して仮焼体を得る第１の工
程と、次にこの仮焼体を用いてセラミックシートを作製
する第２の工程と、次に前記セラミックシートとＡｇを
含有する内部電極とを交互に前記内部電極の端部が表面
に露出するように積層して積層体を得る第３の工程と、
次いでこの積層体を焼成して前記内部電極の露出した面
に外部電極を形成する第４の工程とを備え、前記第１の
工程における仮焼温度は９５０〜１０５０℃で、第１の
工程後第２の工程前に前記仮焼体にＳｉ化合物を添加
し、前記セラミックシートは主成分（Ｐｂ1-uＡu）
v｛（Ｚｎ1/3Ｎｂ2/3）w（Ｓｎ1/3Ｎｂ2/3）xＴｉyＺｒ
z｝Ｏ3（ただし、Ａはランタン系列から選ばれる少なく
とも一種以上の金属元素、０．８５≦ｕ≦０．９９、
０．９７≦ｖ≦１．０３、０．０１≦ｗ≦０．２０、
０．０１≦ｘ≦０．１５、０．３５≦ｙ≦０．４８、
０．３０≦ｚ≦０．５０、ｗ＋ｘ＋ｙ＋ｚ＝１）に、副
成分として前記主成分１００重量％に対しＭｎをＭｎＯ
2に換算して０．０５〜２．５重量％、ＳｉをＳｉＯ2に
換算して０．０１〜０．５重量％含有させた圧電磁器組
成物からなる圧電デバイスの製造方法。5. A Pb compound, an A compound (A is one or more kinds of elements selected from lanthanum series metal elements), a Zn compound, an Nb compound, a Sn compound, a Ti compound, a Zr compound, and a Mn compound are mixed and calcined. To obtain a calcined body, and then a second step of producing a ceramic sheet using this calcined body, and then the ceramic sheet and the Ag-containing internal electrode are alternately formed as described above. A third step of obtaining a laminated body by laminating so that the ends of the internal electrodes are exposed on the surface;
And a fourth step of forming an external electrode on the exposed surface of the internal electrode by firing the laminated body, and the calcination temperature in the first step is 950 to 1050 ° C., and after the first step. Before the second step, a Si compound is added to the calcined body, and the ceramic sheet contains the main component (Pb 1 -u A u ).
v {(Zn 1/3 Nb 2/3 ) w (Sn 1/3 Nb 2/3 ) x Ti y Zr
z } O 3 (where A is at least one metal element selected from the lanthanum series, 0.85 ≦ u ≦ 0.99,
0.97 ≦ v ≦ 1.03, 0.01 ≦ w ≦ 0.20,
0.01 ≦ x ≦ 0.15, 0.35 ≦ y ≦ 0.48,
0.30 ≦ z ≦ 0.50, w + x + y + z = 1), and Mn is MnO based on 100% by weight of the main component as an auxiliary component.
A method for producing a piezoelectric device comprising a piezoelectric ceramic composition containing 0.05 to 2.5 wt% in terms of 2 and 0.01 to 0.5 wt% in terms of Si as SiO 2 .
２μｍである請求項５に記載の圧電デバイスの製造方
法。6. The average particle diameter of the Si compound is 0.05 to 0.
The method for manufacturing a piezoelectric device according to claim 5, wherein the thickness is 2 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001238765A JP2003055046A (en) | 2001-08-07 | 2001-08-07 | Piezoelectric ceramic composition, piezoelectric device using the same and producing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001238765A JP2003055046A (en) | 2001-08-07 | 2001-08-07 | Piezoelectric ceramic composition, piezoelectric device using the same and producing method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003055046A true JP2003055046A (en) | 2003-02-26 |
Family
ID=19069630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001238765A Pending JP2003055046A (en) | 2001-08-07 | 2001-08-07 | Piezoelectric ceramic composition, piezoelectric device using the same and producing method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003055046A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100481717B1 (en) * | 2001-12-27 | 2005-04-11 | 주식회사 에스세라 | Piezoelectric ceramic composition and piezoelectric device using the same |
| KR101248797B1 (en) | 2010-09-30 | 2013-04-03 | 티디케이가부시기가이샤 | Piezoelectric porcelain and piezoelectric element having the same, and piezoelectric device having the piezoelectric element |
| CN112552047A (en) * | 2020-11-25 | 2021-03-26 | 海鹰企业集团有限责任公司 | high-Curie-temperature 'transmitting-receiving' dual-purpose PZT ternary system piezoelectric ceramic material and preparation method thereof |
-
2001
- 2001-08-07 JP JP2001238765A patent/JP2003055046A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100481717B1 (en) * | 2001-12-27 | 2005-04-11 | 주식회사 에스세라 | Piezoelectric ceramic composition and piezoelectric device using the same |
| KR101248797B1 (en) | 2010-09-30 | 2013-04-03 | 티디케이가부시기가이샤 | Piezoelectric porcelain and piezoelectric element having the same, and piezoelectric device having the piezoelectric element |
| CN112552047A (en) * | 2020-11-25 | 2021-03-26 | 海鹰企业集团有限责任公司 | high-Curie-temperature 'transmitting-receiving' dual-purpose PZT ternary system piezoelectric ceramic material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4039029B2 (en) | Piezoelectric ceramics, piezoelectric element, and multilayer piezoelectric element | |
| TW554556B (en) | Piezoelectric ceramic, method of manufacturing thereof and piezoelectric device | |
| JP3958668B2 (en) | Piezoelectric ceramic composition, piezoelectric element, and method for manufacturing piezoelectric element | |
| JP2007258280A (en) | Laminated piezoelectric element | |
| JP2001019542A (en) | Piezoelectric ceramic and piezoelectric device by using the same | |
| JP5651452B2 (en) | Piezoelectric / electrostrictive ceramics sintered body | |
| JP5506731B2 (en) | Method for manufacturing piezoelectric element | |
| JP6175528B2 (en) | Piezoelectric device | |
| JP4748291B2 (en) | Laminate displacement element | |
| JP5462090B2 (en) | Piezoelectric / electrostrictive ceramics sintered body | |
| JP2004075448A (en) | Piezoelectric ceramic composition, method of manufacturing piezoelectric ceramic composition and piezoelectric ceramic part | |
| JP2003055046A (en) | Piezoelectric ceramic composition, piezoelectric device using the same and producing method therefor | |
| JP2001253772A (en) | Piezoelectric porcelain composition and method for manufacture the same | |
| JP4804709B2 (en) | PZT composition capable of low-temperature sintering and piezoelectric ceramic device using the same | |
| JP5183986B2 (en) | Piezoelectric / electrostrictive element, piezoelectric / electrostrictive ceramic composition, and piezoelectric motor | |
| CN116589277A (en) | Piezoelectric ceramic, ceramic electronic component, and method for manufacturing piezoelectric ceramic | |
| JP7491713B2 (en) | Piezoelectric element, piezoelectric actuator, and piezoelectric transformer | |
| JP2002293624A (en) | Piezoelectric ceramic, production method therefor and piezoelectric element | |
| WO2023032326A1 (en) | Piezoelectric ceramic composition, piezoelectric ceramics, piezoelectric element, and tactile module | |
| JP5651453B2 (en) | Piezoelectric / electrostrictive ceramics sintered body | |
| JP3332205B2 (en) | Piezoelectric ceramic composition and laminated piezoelectric transformer | |
| JP4798898B2 (en) | Piezoelectric ceramic composition, piezoelectric resonator, and multilayer piezoelectric element | |
| JP2009114049A (en) | Piezoelectric/electrostrictive ceramic composition and piezoelectric/electrostrictive element | |
| JP4506187B2 (en) | Piezoelectric ceramic composition and piezoelectric element | |
| JP2005183701A (en) | Piezoelectric element and its manufacturing method |