JP2002093722A - Plasma cvd system, method of forming thin film and method of manufacturing solar cell - Google Patents
Plasma cvd system, method of forming thin film and method of manufacturing solar cellInfo
- Publication number
- JP2002093722A JP2002093722A JP2000279782A JP2000279782A JP2002093722A JP 2002093722 A JP2002093722 A JP 2002093722A JP 2000279782 A JP2000279782 A JP 2000279782A JP 2000279782 A JP2000279782 A JP 2000279782A JP 2002093722 A JP2002093722 A JP 2002093722A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- electrode plate
- plasma cvd
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000010408 film Substances 0.000 claims abstract description 82
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- 239000000463 material Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 102100033041 Carbonic anhydrase 13 Human genes 0.000 description 1
- 101000867860 Homo sapiens Carbonic anhydrase 13 Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、プラズマＣＶＤ
装置、このプラズマＣＶＤ装置を用いた薄膜形成方法、
および太陽電池の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention
Apparatus, a thin film forming method using the plasma CVD apparatus,
And a method for manufacturing a solar cell.
【０００２】[0002]
【従来の技術】従来のプラズマＣＶＤ(Chemical Vapor
Deposition)装置を図８に基づいて説明する。図８にお
いて１は成膜用材料ガスが封入されたガスボンベ、２は
ガス供給コントローラ、３はガス供給ノズル、４は真空
チャンバー、５はアノード電極板、６はカソード電極
板、７は複数のアノード電極板間あるいはカソード電極
板間を電気的に接続するコネクタ、８は被成膜基板、９
は高周波電源、１０は高周波電源により発生したプラズ
マ、１１は真空排気系をそれぞれ示す。2. Description of the Related Art Conventional plasma CVD (Chemical Vapor)
The Deposition device will be described with reference to FIG. 8, reference numeral 1 denotes a gas cylinder in which a material gas for film formation is sealed, 2 denotes a gas supply controller, 3 denotes a gas supply nozzle, 4 denotes a vacuum chamber, 5 denotes an anode electrode plate, 6 denotes a cathode electrode plate, and 7 denotes a plurality of anodes. A connector for electrically connecting between the electrode plates or between the cathode electrode plates;
Denotes a high-frequency power source, 10 denotes plasma generated by the high-frequency power source, and 11 denotes a vacuum exhaust system.
【０００３】次に図８に示されたプラズマＣＶＤ装置の
動作について説明する。成膜用材料ガスが封入されたガ
スボンベ１からガス供給コントローラ２を通して所望の
流量に制御された成膜用材料ガスは、ガス供給ノズル３
を経て真空排気系１１により所望の真空度まで減圧した
真空チャンバー４内へ導入される。高周波電源９からア
ノード電極板５に供給され、一方のカソード電極板６と
の両電極板間で発生する高周波プラズマ１０によって、
材料ガスはプラズマ分解され、カソードおよびアノード
電極板５，６に載置された被成膜基板８の成膜に供され
る。Next, the operation of the plasma CVD apparatus shown in FIG. 8 will be described. A film forming material gas controlled to a desired flow rate through a gas supply controller 2 from a gas cylinder 1 in which a film forming material gas is sealed is supplied to a gas supply nozzle 3.
Is introduced into the vacuum chamber 4 evacuated to a desired degree of vacuum by the evacuation system 11. The high-frequency plasma 10 is supplied from the high-frequency power supply 9 to the anode electrode plate 5 and is generated between the two electrode plates with one cathode electrode plate 6.
The material gas is plasma-decomposed and used for film formation on the film-forming substrate 8 placed on the cathode and anode electrode plates 5 and 6.
【０００４】なお、図８の従来のプラズマＣＶＤ装置で
は、成膜１回当りの処理枚数の向上を図るためアノード
電極板５およびカソード電極板６を複数枚具備した装置
構成を具体例として挙げている。複数のアノードおよび
カソード電極板間を電気的に接続するため、コネクタ７
がそれぞれ取り付けられている。In the conventional plasma CVD apparatus shown in FIG. 8, a specific example of an apparatus configuration having a plurality of anode electrode plates 5 and cathode electrode plates 6 in order to increase the number of processed sheets per film formation is given. I have. A connector 7 is used to electrically connect a plurality of anode and cathode electrode plates.
Are attached.
【０００５】また、図９は従来のプラズマＣＶＤ装置の
アノード電極あるいはカソード電極を構成する電極板１
８の上面図である。図８に示すような表面が水平面であ
る電極板上に被成膜基板８を載置して成膜する装置構成
では、電極板の表面は一般に平坦であるが、被成膜基板
８が定形である場合には、被成膜基板８を安定に保持す
るため、電極板１８中に被成膜基板形状に対応した座ぐ
りが形成されている場合もある。FIG. 9 shows an electrode plate 1 constituting an anode electrode or a cathode electrode of a conventional plasma CVD apparatus.
FIG. 8 is a top view of FIG. In the apparatus configuration shown in FIG. 8 in which the film formation substrate 8 is mounted on an electrode plate having a horizontal surface, the surface of the electrode plate is generally flat. In this case, a counterbore corresponding to the shape of the deposition target substrate may be formed in the electrode plate 18 in order to stably hold the deposition target substrate 8.
【０００６】座ぐりの有無に係わらず、従来の電極板１
８では高周波プラズマ１０は被成膜基板８の裏面側には
殆ど回り込まないので、被成膜基板８で高周波プラズマ
１０に曝される側にのみ成膜される。この結果、図８に
示した従来のプラズマＣＶＤ装置を用いて被成膜基板８
の両面にそれぞれ成膜したい場合は、一旦真空チャンバ
ー４内を大気圧に戻して被成膜基板８を真空チャンバー
４外部に取り出し、再度所望の面を高周波プラズマに曝
さらすよう、被成膜基板８を両電極板５，６上に配置し
て再度成膜する必要があった。[0006] Regardless of the presence or absence of counterbore, the conventional electrode plate 1
In FIG. 8, the high-frequency plasma 10 hardly reaches the back surface of the film-forming substrate 8, so that the film is formed only on the side of the film-forming substrate 8 that is exposed to the high-frequency plasma 10. As a result, using the conventional plasma CVD apparatus shown in FIG.
When it is desired to form a film on both surfaces of the substrate, the inside of the vacuum chamber 4 is once returned to the atmospheric pressure, the substrate 8 is taken out of the vacuum chamber 4, and the desired surface is exposed again to the high-frequency plasma. 8 had to be arranged on both the electrode plates 5 and 6 to form a film again.
【０００７】次に図１０に基づき従来の一般的な結晶シ
リコン（Ｓｉ）系太陽電池の素子構造を説明する。図１
０において、１００は例えばｐ型の多結晶Ｓｉ基板、１
０１はｐ型多結晶Ｓｉ基板１００の表面に形成されたｎ
型拡散層、１０２はｐ型多結晶Ｓｉ基板１００と上記ｎ
型拡散層１０１との間に形成されたｐｎ接合、１０３は
ｐ型多結晶Ｓｉ基板１００の裏面側に形成されたｐ+型
裏面電界（Back-Surface-Field,ＢＳＦ）層、１０４は
ｎ型拡散層１０１上に形成された例えば窒化膜（Ｓｉ
Ｎ）からなる反射防止膜、１０５は電極をそれぞれ示
す。Next, an element structure of a conventional general crystalline silicon (Si) solar cell will be described with reference to FIG. FIG.
At 0, 100 is, for example, a p-type polycrystalline Si substrate, 1
01 denotes n formed on the surface of the p-type polycrystalline Si substrate 100.
Diffusion layer 102 is a p-type polycrystalline Si substrate 100
Pn junction formed between the diffusion layer 101, 103 is a p-type polycrystalline Si p + -type back surface field formed on the back surface side of the substrate 100 (Back-Surface-Field, BSF) layer, 104 an n-type For example, a nitride film (Si) formed on the diffusion layer 101
N), an anti-reflection film, and 105 each represent an electrode.
【０００８】次に図１０の太陽電池の動作について説明
する。光照射により多結晶Ｓｉ基板内で発生した電子―
正孔対はｐ型の多結晶Ｓｉ基板１００と表面側に形成さ
れたｎ型拡散層１０１との間のｐｎ接合１０２によって
分離され、電子はｎ型拡散層１０１へ、また正孔は裏面
側に形成されたＢＳＦ層１０３へ移動して、それぞれの
面に形成された電極１０５により収集される。なお、表
面側に形成された反射防止膜１０４は表面での光反射を
抑制し、ｐ型多結晶Ｓｉ基板１００内へ入射する光の量
を多くする機能がある。Next, the operation of the solar cell of FIG. 10 will be described. Electrons generated in polycrystalline Si substrate by light irradiation
Hole pairs are separated by a pn junction 102 between a p-type polycrystalline Si substrate 100 and an n-type diffusion layer 101 formed on the front surface side, electrons are transferred to the n-type diffusion layer 101, and holes are transferred to the back side. Is moved to the BSF layer 103 formed on the surface, and is collected by the electrodes 105 formed on the respective surfaces. The antireflection film 104 formed on the front surface has a function of suppressing light reflection on the surface and increasing the amount of light incident on the p-type polycrystalline Si substrate 100.
【０００９】プラズマＣＶＤ法で形成したＳｉＮからな
る反射防止膜１０４では、材料ガスとしてシラン（Ｓｉ
Ｈ4）およびアンモニア（ＮＨ3）が一般的に用いられ、
これらの材料ガスをプラズマで分解および成膜する際に
多量の水素原子やラジカルが発生する。この水素原子が
被成膜基板８である多結晶Ｓｉ基板１００中の結晶欠陥
を不活性化することで、素子特性に大きな影響を与える
少数キャリア拡散長を、反射防止膜形成処理、すなわち
水素プラズマ処理前に比べて著しく増大させることがで
き、この結果、素子特性が大幅に改善される。In the anti-reflection film 104 made of SiN formed by the plasma CVD method, silane (Si
H 4 ) and ammonia (NH 3 ) are commonly used,
When these material gases are decomposed and formed into films by plasma, a large amount of hydrogen atoms and radicals are generated. The hydrogen atoms inactivate crystal defects in the polycrystalline Si substrate 100, which is the film-forming substrate 8, so that the minority carrier diffusion length, which greatly affects the device characteristics, is reduced by an antireflection film forming process, that is, hydrogen plasma It can be significantly increased as compared to before the processing, and as a result, the device characteristics are greatly improved.
【００１０】しかしながら、図９に示すような電極板１
８の構造および図１０に示すような太陽電池の素子構造
では、表面側の成膜時に裏面側からの水素原子による結
晶欠陥の不活性化は困難であった。However, the electrode plate 1 shown in FIG.
In the structure of FIG. 8 and the element structure of the solar cell as shown in FIG. 10, it was difficult to inactivate crystal defects due to hydrogen atoms from the back side during film formation on the front side.
【００１１】このため、多結晶Ｓｉ基板１００の裏面側
からも水素原子やラジカルの供給を行う目的で、裏面側
にも再度ＳｉＮ薄膜を形成する方法が試みられている。
この場合の太陽電池の断面構造を図６に示す。図６にお
いて図１０と同一番号は同一、あるいは同等の部分を意
味し、１０６は裏面側に形成されたＳｉＮ薄膜を表す。
図６に示した素子構造では裏面側にＳｉＮ薄膜を形成す
る際に、裏面側からも水素原子やラジカルの供給ができ
るので、裏面側に存在する結晶欠陥の不活性化に対して
有効であった。したがって、多結晶Ｓｉ基板１００の表
面側のみから水素処理を行った太陽電池よりも良好な素
子特性を示す太陽電池作製の報告がなされていた。For this reason, a method of forming a SiN thin film again on the back surface side for the purpose of supplying hydrogen atoms and radicals also from the back surface side of the polycrystalline Si substrate 100 has been attempted.
FIG. 6 shows a cross-sectional structure of the solar cell in this case. 6, the same reference numerals as those in FIG. 10 denote the same or equivalent parts, and 106 denotes a SiN thin film formed on the back surface side.
In the device structure shown in FIG. 6, when a SiN thin film is formed on the back side, hydrogen atoms and radicals can be supplied from the back side, which is effective in inactivating crystal defects existing on the back side. Was. Therefore, there has been reported a solar cell fabrication exhibiting better device characteristics than a solar cell subjected to hydrogen treatment only from the surface side of the polycrystalline Si substrate 100.
【００１２】しかし、この場合、被成膜基板８、すなわ
ち多結晶Ｓｉ基板１００の裏面側から水素原子やラジカ
ルを供給するには、表面側の反射防止膜１０４、すなわ
ちＳｉＮ薄膜を形成した後に真空を破り一旦大気圧に戻
し、被成膜基板８を裏返してカソードやアノード電極板
５，６上に載置した後、再度真空引きを行い、裏面側に
ＳｉＮ薄膜を成膜せねばならなかった。However, in this case, in order to supply hydrogen atoms and radicals from the backside of the film-forming substrate 8, ie, the polycrystalline Si substrate 100, a vacuum is formed after forming the antireflection film 104, ie, the SiN thin film on the front side. To once return to the atmospheric pressure, turn the film-forming substrate 8 upside down and place it on the cathode and anode electrode plates 5 and 6, and then evacuate again to form a SiN thin film on the back surface side. .
【００１３】[0013]
【発明が解決しようとする課題】以上のように多結晶Ｓ
ｉ基板の表面側のみにＳｉＮ薄膜を形成した多結晶Ｓｉ
太陽電池では、裏面側での欠陥の不活性化効果が無く、
変換効率の向上が図れなかった。As described above, the polycrystalline S
Polycrystalline Si with SiN thin film formed only on the front side of i-substrate
In solar cells, there is no effect of inactivating defects on the back side,
Conversion efficiency could not be improved.
【００１４】また、素子特性向上のために従来のプラズ
マＣＶＤ装置を用いて多結晶Ｓｉ基板の両面に成膜を行
うには、表面側と裏面側の２回に分けて成膜を行うた
め、片面のみの成膜の場合と比して２倍の処理時間を要
するのでスループットが低下することに加えて、最初に
成膜した面が再度の成膜時には電極板に接触するため薄
膜に損傷を与えたり、被成膜基板の加熱冷却工程を２度
繰り返すために多結晶Ｓｉ基板そのものの品質の低下を
引き起こしたりする問題があった。Further, in order to form a film on both sides of a polycrystalline Si substrate using a conventional plasma CVD apparatus in order to improve element characteristics, the film is formed in two steps, a front side and a back side. Since the processing time is twice as long as that of the case where only one side is formed, the throughput is reduced. In addition, the thin film is damaged because the first formed side comes into contact with the electrode plate when the film is formed again. In addition, there is a problem that the quality of the polycrystalline Si substrate itself is deteriorated because the heating or cooling process of the deposition target substrate is repeated twice.
【００１５】[0015]
【課題を解決するための手段】この発明に係るプラズマ
ＣＶＤ装置は、真空チャンバーと、真空チャンバー内で
交互に対向配置されたアノード電極板およびカソード電
極板と、両電極板に高周波を印加して両電極板間に高周
波プラズマを発生させる高周波電源とを備え、アノード
電極板、カソード電極板の両方または一方の被成膜基板
を載置する領域に被成膜基板に略一致した形状を呈し、
被成膜基板の両面を高周波プラズマに曝さらす開口部を
少なくとも１以上有することとしたものである。According to the plasma CVD apparatus of the present invention, a high frequency is applied to a vacuum chamber, an anode electrode plate and a cathode electrode plate alternately arranged in the vacuum chamber, and both electrode plates. A high-frequency power supply for generating high-frequency plasma between the two electrode plates, and an anode electrode plate, a cathode electrode plate or both or one of the regions on which the film formation substrate is mounted, has a shape substantially coincident with the film formation substrate,
At least one opening for exposing both surfaces of the film-forming substrate to high-frequency plasma is provided.
【００１６】また、この発明に係るプラズマＣＶＤ装置
は、上述の開口部の内周部分に被成膜基板を保持するた
めの突起部を設けたものである。In the plasma CVD apparatus according to the present invention, a projection for holding a substrate on which a film is to be formed is provided at an inner peripheral portion of the opening.
【００１７】また、この発明に係るプラズマＣＶＤ装置
は、上述の開口部で被成膜基板を載置する面と反対側に
面する部分に所望のパターン形状に対応した遮蔽領域が
設られているものである。Further, in the plasma CVD apparatus according to the present invention, a shielding area corresponding to a desired pattern shape is provided in a portion of the opening facing the side opposite to the surface on which the film formation substrate is mounted. Things.
【００１８】この発明に係る薄膜形成方法は、被成膜基
板に略一致した形状を呈する開口部が設けられた所定の
アノード電極板および／またはカソード電極板を具備し
たプラズマＣＶＤ装置により、所望の薄膜を被成膜基板
の両面に同時に形成する工程を備えたこととしたもので
ある。According to the thin film forming method of the present invention, a plasma CVD apparatus provided with a predetermined anode electrode plate and / or a cathode electrode plate provided with an opening having a shape substantially conforming to a substrate on which a film is to be formed is provided. The method includes a step of simultaneously forming a thin film on both surfaces of the deposition target substrate.
【００１９】この発明に係る太陽電池の製造方法は、シ
リコン基板に略一致した形状を呈する開口部が設けられ
た所定のアノード電極板および／またはカソード電極板
を具備したプラズマＣＶＤ装置により、シリコン基板の
表面に対しては反射防止膜として機能し、裏面に対して
は保護膜として機能する薄膜を同時に形成する工程を備
えたこととしたものである。The method for manufacturing a solar cell according to the present invention is directed to a method for manufacturing a solar cell using a plasma CVD apparatus provided with a predetermined anode electrode plate and / or cathode electrode plate provided with an opening having a shape substantially coinciding with the silicon substrate. And a step of simultaneously forming a thin film that functions as an anti-reflection film on the front surface and functions as a protective film on the back surface.
【００２０】[0020]
【発明の実施の形態】実施の形態１．図１は本発明に係
るプラズマＣＶＤ装置の概略構成図である。図中、１は
成膜用材料ガスが封入されたガスボンベ、２はガス供給
コントローラ、３はガス供給ノズル、４は真空チャンバ
ー、５はアノード電極板、６はカソード電極板、７は複
数のアノード電極板間あるいはカソード電極板間を電気
的に接続するコネクタ、８は被成膜基板、９は高周波電
源、１０は高周波電源により発生したプラズマ、１１は
真空排気系、５０は端部アノード電極板、５１は中央部
アノード電極板、６０は端部カソード電極板、６１は中
央部カソード電極板、をそれぞれ示す。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG. 1 is a schematic configuration diagram of a plasma CVD apparatus according to the present invention. In the figure, 1 is a gas cylinder in which a material gas for film formation is sealed, 2 is a gas supply controller, 3 is a gas supply nozzle, 4 is a vacuum chamber, 5 is an anode electrode plate, 6 is a cathode electrode plate, and 7 is a plurality of anodes. A connector for electrically connecting between the electrode plates or between the cathode electrode plates, 8 is a substrate on which film is to be formed, 9 is a high-frequency power supply, 10 is plasma generated by a high-frequency power supply, 11 is a vacuum exhaust system, 50 is an end anode electrode plate. , 51 are a central anode electrode plate, 60 is an end cathode electrode plate, and 61 is a central cathode electrode plate.
【００２１】本発明に係るプラズマＣＶＤ装置における
成膜方法について説明する。なお、中央部アノード電極
板５１および中央部カソード電極板６１以外は図８に示
す従来のプラズマＣＶＤ装置と同一である。A film forming method in the plasma CVD apparatus according to the present invention will be described. The components other than the central anode electrode plate 51 and the central cathode electrode plate 61 are the same as those of the conventional plasma CVD apparatus shown in FIG.
【００２２】成膜用材料ガスを封入したガスボンベ１か
らガス供給コントローラ２を通して所望の流量に制御さ
れた材料ガスがガス供給ノズル３を経て真空チャンバー
４内へ導入される。真空排気系１１により所望の真空度
まで減圧した真空チャンバ−４内に導入された材料ガス
は、高周波電源９により端部アノード電極板５０および
中央部アノード電極板５１に供給され一方の端部カソー
ド電極板６０および中央部カソード電極板６１との間で
発生する高周波プラズマ１０によってプラズマ分解さ
れ、被成膜基板８の成膜に供される。A material gas controlled to a desired flow rate through a gas supply controller 2 is introduced into a vacuum chamber 4 through a gas supply nozzle 3 from a gas cylinder 1 containing a film forming material gas. The material gas introduced into the vacuum chamber 4 depressurized to a desired degree of vacuum by the vacuum evacuation system 11 is supplied to the end anode electrode plate 50 and the center anode electrode plate 51 by the high frequency power supply 9 and one end cathode is provided. The high-frequency plasma 10 generated between the electrode plate 60 and the central cathode electrode plate 61 is plasma-decomposed and used for film formation on the film-forming substrate 8.
【００２３】なお、実施の形態１では成膜１回当たりの
処理枚数の向上を図るためアノード電極板５０，５１お
よびカソード電極板６０，６１を複数具備した装置構成
を具体例として挙げている。複数のアノードあるいはカ
ソード電極板間を電気的に接続するため、コネクタ７が
それぞれ取り付けられている。In the first embodiment, in order to improve the number of substrates to be processed per film formation, a specific example of an apparatus configuration including a plurality of anode electrode plates 50 and 51 and cathode electrode plates 60 and 61 is given. In order to electrically connect a plurality of anode or cathode electrode plates, connectors 7 are respectively attached.
【００２４】次に本発明のプラズマＣＶＤ装置のアノー
ドおよびカソード電極板について説明する。図２の上面
図に示すように、中央部アノード電極板５１および中央
部カソード電極板６１のような電極板１３には開口部１
４が設けられている。かかる開口部を塞ぐように載置さ
れた被成膜基板８では、図３に示すように１回の成膜プ
ロセスで表面側には被成膜基板８の全面に薄膜１５が形
成され、さらに裏面側にも開口部１４に対応した形状で
薄膜１６が形成される。なお、端部アノード電極板５０
および端部カソード電極板６０にはかかる開口部は設け
られていない。Next, the anode and cathode electrode plates of the plasma CVD apparatus of the present invention will be described. As shown in the top view of FIG. 2, an electrode plate 13 such as a central anode electrode plate 51 and a central cathode electrode plate 61 has openings 1
4 are provided. As shown in FIG. 3, the thin film 15 is formed on the entire surface of the film formation substrate 8 on the front surface side by one film formation process as shown in FIG. A thin film 16 is also formed on the back surface in a shape corresponding to the opening 14. The end anode electrode plate 50
Such an opening is not provided in the end cathode electrode plate 60.
【００２５】成膜中に被成膜基板８をより安定に保持す
べく、上述の中央部アノード電極板５１および中央部カ
ソード電極板６１の開口部１４の内周部分に、図４の断
面図に示すような突起１２を設けてもよい。In order to more stably hold the substrate 8 on which the film is to be formed during the film formation, the inner peripheral portion of the opening 14 of the central anode electrode plate 51 and the central cathode electrode plate 61 is provided with a sectional view of FIG. A projection 12 as shown in FIG.
【００２６】実施の形態２．実施の形態１では電極板１
３の開口部１４を覆うように被成膜基板８を載置して成
膜を行ったが、この場合には図３に示すように被成膜基
板８の表面側全面１５および裏面側の中央部１６に所望
の膜を成膜することができる。一方、載置する被成膜基
板８の表面側あるいは裏面側のどちらか一方に意図的に
部分的に成膜を行う必要がある場合には、例えば図５に
示すように、開口部１４を所望の形に加工することによ
り、開口部の形状に対応した裏面側の中央部に成膜しな
い部分を残すような薄膜１７を形成することも容易に可
能である。この結果、裏面の薄膜のパターニングを写真
製版工程を経ることなく形成できる。Embodiment 2 FIG. In the first embodiment, the electrode plate 1
The film formation was performed by placing the film formation substrate 8 so as to cover the opening 14 of the film formation substrate 3. In this case, as shown in FIG. A desired film can be formed on the central portion 16. On the other hand, when it is necessary to intentionally partially form a film on either the front surface side or the back surface side of the deposition target substrate 8 to be mounted, as shown in FIG. By processing into a desired shape, it is also possible to easily form a thin film 17 that leaves a portion where no film is formed at the center on the back side corresponding to the shape of the opening. As a result, patterning of the thin film on the back surface can be formed without going through a photomechanical process.
【００２７】このように、裏面の所望の部分に成膜がで
きるよう開口部の形状を自由に設計することができ、裏
面側の設計に大きな自由度がある特徴を有する。もちろ
ん表裏面いずれにもパターン化された部分的な成膜を必
要とする場合には、裏面側は開口部に加工を施すことに
より、また表面側は所望のパターンが形成された遮蔽用
マスクを被成膜基板８上に配置することにより、被成膜
基板両面に対して所望の部分にのみ成膜を行うことがで
きることは言うまでもない。As described above, the shape of the opening can be freely designed so that a film can be formed on a desired portion of the back surface, and the design of the back surface has a great degree of freedom. Of course, if partial patterned film formation is required on both the front and back sides, the back side should be processed into the opening, and the front side should have a shielding mask with the desired pattern formed. It is needless to say that the film can be formed only on a desired portion on both surfaces of the film formation substrate by disposing the film on the film formation substrate 8.
【００２８】従来の製造方法では裏面全体に薄膜を形成
すると裏面のｐ型電極と多結晶Ｓｉ基板との導通が取れ
なくなり、ｐ型電極を形成するべき部分の薄膜は除去す
るか、あるいは始めからその部分には薄膜が成膜しない
ようにする必要があったが、かかる製造方法を用いれ
ば、ｐ型電極形成を行う部分のみ成膜されない様にマス
クパターンを電極板の開口部に予め形成しておくと、後
工程で該当部分の除去しなくてもよい。In the conventional manufacturing method, when a thin film is formed on the entire back surface, conduction between the p-type electrode on the back surface and the polycrystalline Si substrate cannot be established, and the thin film in the portion where the p-type electrode is to be formed is removed or from the beginning. Although it was necessary to prevent a thin film from being formed in that portion, using such a manufacturing method, a mask pattern was previously formed in the opening of the electrode plate so that only the portion for forming the p-type electrode was not formed. If this is done, it is not necessary to remove the relevant portion in a later step.
【００２９】また、本発明の実施の形態１および２で
は、被成膜基板８を水平に配置する構造のプラズマＣＶ
Ｄ装置を実施例として示したが、図７に示すように被成
膜基板８を垂直に配置する構造のプラズマＣＶＤ装置で
も全く同様に適用できることは言うまでも無い。垂直配
置の場合には、電極板に被成膜基板８を保持するための
機構が必要となるが、それ以外の構造および動作は水平
配置のプラズマＣＶＤ装置と何ら変わることは無い。In the first and second embodiments of the present invention, the plasma CV having a structure in which the substrate 8 to be deposited is arranged horizontally is used.
Although the D apparatus has been described as an example, it goes without saying that a plasma CVD apparatus having a structure in which the substrate 8 is vertically arranged as shown in FIG. In the case of the vertical arrangement, a mechanism for holding the film formation substrate 8 on the electrode plate is required, but other structures and operations are not different from those of the horizontal arrangement of the plasma CVD apparatus.
【００３０】さらに、本実施例ではアノードおよびカソ
ード電極板対が２組のものを図示したが、３組以上であ
っても同様の成膜が可能であることは言うまでも無い。
また、本発明の実施例では主に太陽電池の特性向上を目
的としたものであるが、太陽電池以外の半導体デバイ
ス、たとえば多結晶Ｓｉ薄膜トランジスタ等で基板両面
に同一の薄膜を成膜することが必要な場合に適用できる
のは言うまでも無い。Further, in the present embodiment, two pairs of anode and cathode electrode plates are shown, but it is needless to say that the same film formation is possible even with three or more pairs.
Further, although the embodiments of the present invention are mainly aimed at improving the characteristics of the solar cell, it is possible to form the same thin film on both surfaces of the substrate using a semiconductor device other than the solar cell, for example, a polycrystalline Si thin film transistor or the like. It goes without saying that it can be applied when necessary.
【００３１】実施の形態３．本発明に係るプラズマＣＶ
Ｄ装置を用いてＳｉＮ薄膜形成を行う太陽電池を作製す
べく、被成膜基板である多結晶Ｓｉ基板の表裏両面にＳ
ｉＮ薄膜を形成する場合は、通常の結晶系太陽電池と同
様のプロセスでｎ型拡散層１０１と裏面側のＢＳＦ層１
０３を形成した多結晶Ｓｉ基板に、表面側の反射防止膜
１０４および裏面側のＳｉＮ薄膜１０６を、１回の成膜
プロセスで同時に形成する。電極１０５はこれらのＳｉ
Ｎ薄膜１０４、１０６の成膜後に形成する。図６に電極
１０５形成後の太陽電池の素子断面図を示す。かかる工
程を採用した結果、変換効率の高い太陽電池を高スルー
プットで製造することができる。Embodiment 3 Plasma CV according to the present invention
In order to manufacture a solar cell on which a SiN thin film is formed using a D apparatus, S
When forming an iN thin film, the n-type diffusion layer 101 and the BSF layer 1 on the back side are formed in the same process as that of a normal crystalline solar cell.
The anti-reflection film 104 on the front side and the SiN thin film 106 on the back side are simultaneously formed on the polycrystalline Si substrate on which the substrate 03 has been formed by one film forming process. The electrode 105 is made of these Si
It is formed after the N thin films 104 and 106 are formed. FIG. 6 shows a cross-sectional view of the solar cell after the formation of the electrode 105. As a result of adopting such a process, a solar cell with high conversion efficiency can be manufactured with high throughput.
【００３２】[0032]
【発明の効果】この発明に係るプラズマＣＶＤ装置で
は、真空チャンバーと、真空チャンバー内で交互に対向
配置されたアノード電極板およびカソード電極板と、両
電極板に高周波を印加して両電極板間に高周波プラズマ
を発生させる高周波電源とを備え、アノード電極板、カ
ソード電極板の両方または一方の被成膜基板を載置する
領域に被成膜基板に略一致した形状を呈し、被成膜基板
の両面を高周波プラズマに曝さらす開口部を少なくとも
１以上有することとしたので、１回の成膜工程で基板の
両面に薄膜を形成できる効果がある。According to the plasma CVD apparatus of the present invention, a vacuum chamber, an anode electrode plate and a cathode electrode plate which are alternately arranged in the vacuum chamber, and a high frequency applied to both electrode plates to cause a gap between the two electrode plates. A high-frequency power supply for generating high-frequency plasma, and a region on which both or one of the anode electrode plate and the cathode electrode plate is mounted has a shape substantially coinciding with the film formation substrate. Has at least one opening for exposing both sides of the substrate to high-frequency plasma, so that there is an effect that thin films can be formed on both sides of the substrate in one film forming step.
【００３３】また、この発明に係るプラズマＣＶＤ装置
では、上述の開口部の内周部分に被成膜基板を保持する
ための突起部を設けたので、被成膜基板を安定に保持し
つつ１回の成膜工程で被成膜基板の両面に薄膜を成膜で
きる効果がある。In the plasma CVD apparatus according to the present invention, since the projection for holding the substrate on which the film is to be formed is provided at the inner peripheral portion of the above-mentioned opening, it is possible to stably hold the substrate on which the film is to be formed. There is an effect that thin films can be formed on both surfaces of the substrate on which the film is to be formed in a single film forming process.
【００３４】また、この発明に係るプラズマＣＶＤ装置
では、上述の開口部で被成膜基板を載置する面と反対側
に面する部分に所望のパターン形状に対応した遮蔽領域
が設られているので、１回の成膜工程で被成膜基板の両
面に複数毎の薄膜を成膜でき、かつ裏面側に形成された
薄膜のパターニングを写真製版工程を経ることなく実現
できる。Further, in the plasma CVD apparatus according to the present invention, a shield region corresponding to a desired pattern shape is provided in a portion of the above-described opening facing the side opposite to the surface on which the film formation substrate is mounted. Therefore, a plurality of thin films can be formed on both surfaces of the substrate to be formed in one film forming process, and the thin films formed on the back surface can be patterned without performing a photoengraving process.
【００３５】この発明に係る薄膜形成方法では、被成膜
基板に略一致した形状を呈する開口部が設けられた所定
のアノード電極板および／またはカソード電極板を具備
したプラズマＣＶＤ装置により被成膜基板の両面に同時
に所定の薄膜を形成する工程を備えることとしたので、
スループットが高く、かつ最初に成膜した面が再度の成
膜時に電極板に接触するため薄膜に損傷を与えたり、被
成膜基板の加熱冷却工程を複数回繰り返すために被成膜
基板そのものの品質の低下を引き起こしたりする不具合
を回避することができる。In the method of forming a thin film according to the present invention, a film is formed by a plasma CVD apparatus provided with a predetermined anode electrode plate and / or cathode electrode plate provided with an opening having a shape substantially conforming to the film formation substrate. Since it was decided to include a step of forming a predetermined thin film on both sides of the substrate at the same time,
The throughput is high, and the surface on which the film is formed first contacts the electrode plate when the film is formed again, causing damage to the thin film. It is possible to avoid problems that cause deterioration in quality.
【００３６】この発明に係る太陽電池の製造方法では、
シリコン基板に略一致した形状を呈する開口部が設けら
れた所定のアノード電極板および／またはカソード電極
板を具備したプラズマＣＶＤ装置によりシリコン基板の
表面に対しては反射防止膜として機能し、裏面に対して
は保護膜として機能する薄膜を同時に形成する工程と、
を備えたので、変換効率の高い太陽電池を高スループッ
トで製造することができる。In the method for manufacturing a solar cell according to the present invention,
A plasma CVD apparatus provided with a predetermined anode electrode plate and / or cathode electrode plate provided with an opening having a shape substantially conforming to the silicon substrate functions as an anti-reflection film on the surface of the silicon substrate and on the back surface Simultaneously forming a thin film functioning as a protective film,
, Solar cells with high conversion efficiency can be manufactured with high throughput.
【図１】 本発明の実施の形態１を示すプラズマＣＶＤ
装置の概略構造図である。FIG. 1 shows plasma CVD showing Embodiment 1 of the present invention.
It is a schematic structure figure of an apparatus.
【図２】 本発明の実施の形態１を示すプラズマＣＶＤ
装置の電極板の上面図である。FIG. 2 shows plasma CVD showing Embodiment 1 of the present invention.
It is a top view of the electrode plate of an apparatus.
【図３】 本発明の実施の形態１を示す被成膜基板表裏
への成膜の様子を示した概略図である。FIG. 3 is a schematic diagram showing a state of film formation on the front and back surfaces of a film formation substrate according to Embodiment 1 of the present invention.
【図４】 本発明の実施の形態１を示すプラズマＣＶＤ
装置の電極板の開口部分の断面図である。FIG. 4 is a plasma CVD showing the first embodiment of the present invention.
It is sectional drawing of the opening part of the electrode plate of an apparatus.
【図５】 本発明の実施の形態２を示す被成膜基板表裏
への成膜の様子を示した概略図である。FIG. 5 is a schematic view showing a state of film formation on the front and back surfaces of a film formation substrate according to Embodiment 2 of the present invention.
【図６】 本発明の実施の形態３である多結晶Ｓｉ基板
表裏へＳｉＮ薄膜形成を行った太陽電池の素子構造の断
面図である。FIG. 6 is a sectional view of an element structure of a solar cell in which a SiN thin film is formed on the front and back of a polycrystalline Si substrate according to a third embodiment of the present invention.
【図７】 本発明の別の実施の形態である被成膜基板を
垂直に保持する構造のプラズマＣＶＤ装置の概略構造図
である。FIG. 7 is a schematic structural view of a plasma CVD apparatus according to another embodiment of the present invention, which has a structure in which a deposition target substrate is held vertically.
【図８】 従来のプラズマＣＶＤ装置の装置構成図であ
る。FIG. 8 is an apparatus configuration diagram of a conventional plasma CVD apparatus.
【図９】 従来のプラズマＣＶＤ装置の電極板の上面図
である。FIG. 9 is a top view of an electrode plate of a conventional plasma CVD apparatus.
【図１０】 従来の多結晶Ｓｉ基板の表面側のみにＳｉ
Ｎ薄膜の形成を施した太陽電池の素子構造の断面図であ
る。FIG. 10 shows that only the surface of the conventional polycrystalline Si substrate has Si
It is sectional drawing of the element structure of the solar cell in which formation of the N thin film was performed.
１ 材料ガスボンベ、 ２ ガス供給コントローラ、
３ ガス供給ノズル、４ 真空チャンバー、 ５ アノ
ード電極板、 ６ カソード電極板、 ７ コネクタ、
８ 被成膜基板、 ９ 高周波電源、 １０ 高周波
プラズマ、 １１ 真空排気系、 １２ 開口部の内周
部分に設けられた突起、 １３ 開口部を具備する電極
板、 １４ 開口部、 １５ 表面側の薄膜形成部、
１６ 裏面側の薄膜形成部、 １７ 開口部を所望の形
状に加工した薄膜、 １８ 電極板、 ５０ 端部アノ
ード電極板、 ５１ 中央部アノード電極板、 ６０
端部カソード電極板、 ６１ 中央部カソード電極板、
１００ ｐ型多結晶Ｓｉ基板、 １０１ ｎ型拡散
層、 １０２ ｐｎ接合、 １０３ ＢＳＦ層、 １０
４ 反射防止膜、 １０５ 電極、 １０６ 裏面側の
ＳｉＮ薄膜1 material gas cylinder, 2 gas supply controller,
3 gas supply nozzle, 4 vacuum chamber, 5 anode electrode plate, 6 cathode electrode plate, 7 connector,
Reference Signs List 8 Deposition substrate, 9 High frequency power supply, 10 High frequency plasma, 11 Vacuum exhaust system, 12 Protrusion provided on inner peripheral portion of opening, 13 Electrode plate having opening, 14 Opening, 15 Thin film on front side Forming part,
16 a thin film forming portion on the back surface side; 17 a thin film having an opening processed into a desired shape; 18 electrode plate; 50 end anode electrode plate; 51 central anode electrode plate;
End cathode electrode plate, 61 Central cathode electrode plate,
100 p-type polycrystalline Si substrate, 101 n-type diffusion layer, 102 pn junction, 103 BSF layer, 10
4. Antireflection film, 105 electrode, 106 SiN thin film on the back side
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4K030 AA06 AA13 BA29 BA40 BB11 BB14 CA04 FA03 GA01 KA08 LA16 5F045 AB33 AC01 AC12 AF03 BB08 CA13 DP13 EH14 5F051 AA02 CB12 GA04 GA06 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA06 AA13 BA29 BA40 BB11 BB14 CA04 FA03 GA01 KA08 LA16 5F045 AB33 AC01 AC12 AF03 BB08 CA13 DP13 EH14 5F051 AA02 CB12 GA04 GA06
Claims (5)
内で交互に対向配置されたアノード電極板およびカソー
ド電極板と、前記両電極板に高周波を印加して両電極板
間に高周波プラズマを発生させる高周波電源と、を備
え、前記アノード電極板、カソード電極板の両方または
一方の被成膜基板を載置する領域に前記被成膜基板に略
一致した形状を呈し、前記被成膜基板の両面を前記高周
波プラズマに曝さらす開口部を少なくとも１以上有する
ことを特徴とするプラズマＣＶＤ装置。1. A vacuum chamber, an anode electrode plate and a cathode electrode plate alternately arranged in the vacuum chamber, and a high frequency for applying a high frequency to the two electrode plates to generate a high frequency plasma between the two electrode plates. A power supply, and the anode electrode plate, the cathode electrode plate, or both or one of the regions on which the film formation substrate is to be mounted has a shape substantially coinciding with the film formation substrate, and both surfaces of the film formation substrate A plasma CVD apparatus having at least one opening for exposure to the high-frequency plasma.
を保持するための突起部を設けたことを特徴とする請求
項１記載のプラズマＣＶＤ装置。2. The plasma CVD apparatus according to claim 1, wherein a projection for holding the film-forming substrate is provided at an inner peripheral portion of the opening.
面と反対側に面する部分に所望のパターン形状に対応し
た遮蔽領域が設られていることを特徴とする請求項１記
載のプラズマＣＶＤ装置。3. A shielding area corresponding to a desired pattern shape is provided at a portion of the opening facing the side opposite to the surface on which the film-forming substrate is mounted. Plasma CVD apparatus.
口部が設けられた所定のアノード電極板および／または
カソード電極板を具備したプラズマＣＶＤ装置により、
所望の薄膜を前記被成膜基板の両面に同時に形成する工
程を備えたことを特徴とする薄膜形成方法。4. A plasma CVD apparatus provided with a predetermined anode electrode plate and / or cathode electrode plate provided with an opening having a shape substantially coinciding with a substrate on which a film is to be formed.
A method for forming a thin film, comprising a step of forming a desired thin film simultaneously on both surfaces of the substrate on which the film is to be formed.
開口部が設けられた所定のアノード電極板および／また
はカソード電極板を具備したプラズマＣＶＤ装置によ
り、前記シリコン基板の表面に対しては反射防止膜とし
て機能し、裏面に対しては保護膜として機能する薄膜を
同時に形成する工程を備えたことを特徴とする太陽電池
の製造方法。5. A plasma CVD apparatus having a predetermined anode electrode plate and / or a cathode electrode plate provided with an opening having a shape substantially coinciding with a silicon substrate, thereby preventing reflection on the surface of the silicon substrate. A method for manufacturing a solar cell, comprising a step of simultaneously forming a thin film functioning as a film and functioning as a protective film on a back surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000279782A JP4496401B2 (en) | 2000-09-14 | 2000-09-14 | Plasma CVD apparatus and method for manufacturing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000279782A JP4496401B2 (en) | 2000-09-14 | 2000-09-14 | Plasma CVD apparatus and method for manufacturing solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002093722A true JP2002093722A (en) | 2002-03-29 |
| JP4496401B2 JP4496401B2 (en) | 2010-07-07 |
Family
ID=18764736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000279782A Expired - Fee Related JP4496401B2 (en) | 2000-09-14 | 2000-09-14 | Plasma CVD apparatus and method for manufacturing solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4496401B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005280A (en) * | 2002-05-21 | 2005-01-06 | Otb Group Bv | Method for passivating semiconductor substrate |
| WO2006137322A1 (en) * | 2005-06-22 | 2006-12-28 | Kyocera Corporation | Solar cell element and solar cell element manufacturing method |
| JP2008261010A (en) * | 2007-04-12 | 2008-10-30 | Ulvac Japan Ltd | Film deposition system |
| WO2010064303A1 (en) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| US20120015474A1 (en) * | 2010-07-19 | 2012-01-19 | Yung-Chun Wu | Method for fabricating silicon heterojunction solar cells |
| KR101199210B1 (en) * | 2010-10-28 | 2012-11-07 | 한국에너지기술연구원 | Apparatus, method and system for depositing layer of solar cell |
| JP2015211094A (en) * | 2014-04-25 | 2015-11-24 | 京セラ株式会社 | Method of manufacturing solar cell element |
| KR20190134183A (en) * | 2018-05-25 | 2019-12-04 | 주성엔지니어링(주) | Apparatus for supporting substrate and apparatus for processing substrate comprising the same |
| KR20210149540A (en) * | 2020-06-02 | 2021-12-09 | 주식회사 한화 | Both Side Processing Apparatus of Substrate |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480023A (en) * | 1987-09-21 | 1989-03-24 | Kanegafuchi Chemical Ind | Formation of thin film and apparatus therefor |
| WO1989003587A1 (en) * | 1987-10-14 | 1989-04-20 | The Furukawa Electric Co., Ltd. | Method and apparatus for thin film formation by plasma cvd |
| JPH01130517A (en) * | 1987-11-17 | 1989-05-23 | Furukawa Electric Co Ltd:The | Plasma cvd device |
| JPH01168021A (en) * | 1987-12-23 | 1989-07-03 | Furukawa Electric Co Ltd:The | Outer work holder |
| JPH0330326A (en) * | 1989-06-27 | 1991-02-08 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus |
| JPH042143A (en) * | 1990-04-19 | 1992-01-07 | Fujitsu Ltd | Method of measuring crystal growth rate |
| JPH04293782A (en) * | 1991-03-20 | 1992-10-19 | Fujitsu Ltd | Plasma chemical vapor deposition device |
| JPH05251354A (en) * | 1991-04-22 | 1993-09-28 | Nippon Ee S M Kk | Thin-film formation raw material used for chemical vapor growth as well as method and apparatus for chemical vapor growth used to form thin film on substrate by using said raw material |
| JPH06128747A (en) * | 1992-10-14 | 1994-05-10 | Asahi Daiyamondo Kogyo Kk | Method and device for forming hard carbonaceous thin film by chemical vapor phase synthesis |
| JPH10173289A (en) * | 1996-12-06 | 1998-06-26 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH11124675A (en) * | 1997-10-16 | 1999-05-11 | Sharp Corp | Plasma treating device |
| JPH11307792A (en) * | 1998-04-27 | 1999-11-05 | Kyocera Corp | Solar cell element |
| JP2000114559A (en) * | 1998-09-30 | 2000-04-21 | Kyocera Corp | Manufacture of solar battery element |
-
2000
- 2000-09-14 JP JP2000279782A patent/JP4496401B2/en not_active Expired - Fee Related
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6480023A (en) * | 1987-09-21 | 1989-03-24 | Kanegafuchi Chemical Ind | Formation of thin film and apparatus therefor |
| WO1989003587A1 (en) * | 1987-10-14 | 1989-04-20 | The Furukawa Electric Co., Ltd. | Method and apparatus for thin film formation by plasma cvd |
| JPH01130517A (en) * | 1987-11-17 | 1989-05-23 | Furukawa Electric Co Ltd:The | Plasma cvd device |
| JPH01168021A (en) * | 1987-12-23 | 1989-07-03 | Furukawa Electric Co Ltd:The | Outer work holder |
| JPH0330326A (en) * | 1989-06-27 | 1991-02-08 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus |
| JPH042143A (en) * | 1990-04-19 | 1992-01-07 | Fujitsu Ltd | Method of measuring crystal growth rate |
| JPH04293782A (en) * | 1991-03-20 | 1992-10-19 | Fujitsu Ltd | Plasma chemical vapor deposition device |
| JPH05251354A (en) * | 1991-04-22 | 1993-09-28 | Nippon Ee S M Kk | Thin-film formation raw material used for chemical vapor growth as well as method and apparatus for chemical vapor growth used to form thin film on substrate by using said raw material |
| JPH06128747A (en) * | 1992-10-14 | 1994-05-10 | Asahi Daiyamondo Kogyo Kk | Method and device for forming hard carbonaceous thin film by chemical vapor phase synthesis |
| JPH10173289A (en) * | 1996-12-06 | 1998-06-26 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH11124675A (en) * | 1997-10-16 | 1999-05-11 | Sharp Corp | Plasma treating device |
| JPH11307792A (en) * | 1998-04-27 | 1999-11-05 | Kyocera Corp | Solar cell element |
| JP2000114559A (en) * | 1998-09-30 | 2000-04-21 | Kyocera Corp | Manufacture of solar battery element |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005005280A (en) * | 2002-05-21 | 2005-01-06 | Otb Group Bv | Method for passivating semiconductor substrate |
| JP4837662B2 (en) * | 2005-06-22 | 2011-12-14 | 京セラ株式会社 | Method for manufacturing solar cell element |
| WO2006137322A1 (en) * | 2005-06-22 | 2006-12-28 | Kyocera Corporation | Solar cell element and solar cell element manufacturing method |
| JPWO2006137322A1 (en) * | 2005-06-22 | 2009-01-15 | 京セラ株式会社 | Solar cell element and method for manufacturing solar cell element |
| JP2008261010A (en) * | 2007-04-12 | 2008-10-30 | Ulvac Japan Ltd | Film deposition system |
| JP5197760B2 (en) * | 2008-12-02 | 2013-05-15 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| US8377734B2 (en) | 2008-12-02 | 2013-02-19 | Mitsubishi Electric Corporation | Method for manufacturing solar battery cell |
| WO2010064303A1 (en) * | 2008-12-02 | 2010-06-10 | 三菱電機株式会社 | Method for manufacturing solar battery cell |
| US20120015474A1 (en) * | 2010-07-19 | 2012-01-19 | Yung-Chun Wu | Method for fabricating silicon heterojunction solar cells |
| KR101199210B1 (en) * | 2010-10-28 | 2012-11-07 | 한국에너지기술연구원 | Apparatus, method and system for depositing layer of solar cell |
| JP2015211094A (en) * | 2014-04-25 | 2015-11-24 | 京セラ株式会社 | Method of manufacturing solar cell element |
| KR20190134183A (en) * | 2018-05-25 | 2019-12-04 | 주성엔지니어링(주) | Apparatus for supporting substrate and apparatus for processing substrate comprising the same |
| KR102544875B1 (en) | 2018-05-25 | 2023-06-19 | 주성엔지니어링(주) | Apparatus for supporting substrate and apparatus for processing substrate comprising the same |
| KR20210149540A (en) * | 2020-06-02 | 2021-12-09 | 주식회사 한화 | Both Side Processing Apparatus of Substrate |
| KR102371772B1 (en) | 2020-06-02 | 2022-03-07 | 주식회사 한화 | Both Side Processing Apparatus of Substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4496401B2 (en) | 2010-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8460469B2 (en) | Apparatus for etching substrate and method of etching substrate using the same | |
| US10840395B2 (en) | Deposition approaches for emitter layers of solar cells | |
| US8592230B2 (en) | Method for patterning a substrate using ion assisted selective depostion | |
| KR101279353B1 (en) | Plasma Generating Apparatus | |
| JP2002093722A (en) | Plasma cvd system, method of forming thin film and method of manufacturing solar cell | |
| JP5520834B2 (en) | Method for forming passivation film and method for manufacturing solar cell element | |
| KR101147658B1 (en) | Plasma processing apparatus and method | |
| US20130109133A1 (en) | Rear-point-contact process or photovoltaic cells | |
| TW201304162A (en) | Method for rear point contact fabrication for solar cells | |
| JP3898600B2 (en) | Manufacturing method of solar cell | |
| KR101555955B1 (en) | Method for manufacturing Wafer type Solar Cell | |
| KR20110020062A (en) | Method of manufacturing back junction solar cell by using plasma doping and diffusion and the solar cell | |
| JP2009272428A (en) | Antireflective film coating method and antireflective film coating apparatus | |
| JP6024417B2 (en) | Sample holder | |
| JP4683454B2 (en) | Solar cell manufacturing method and manufacturing apparatus | |
| JP2003101048A (en) | Method for manufacturing photovoltaic device | |
| JP5977540B2 (en) | Solar cell manufacturing method, manufacturing apparatus, and solar cell | |
| JP2001026878A (en) | Thin film forming device and formation of semiconductor thin film | |
| JP3898604B2 (en) | Manufacturing method of solar cell | |
| KR20010044058A (en) | Ashing apparatus for processing glass substrate or waper | |
| JP4184814B2 (en) | Parallel plate type plasma CVD apparatus and method for manufacturing film formation substrate | |
| JP3261795B2 (en) | Plasma processing equipment | |
| KR20130016719A (en) | Method and apparatus for manufacturing of solar cell | |
| JPH09162173A (en) | Method and system for ashing | |
| JP2013258280A (en) | Method for manufacturing solar cell and solar cell manufacturing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20040707 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070808 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100122 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100126 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100222 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100316 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100329 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130423 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130423 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140423 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |