JP2001508388A - 特に炭素、炭化シリコンについての耐火性物質の化学気相浸透方法、及びその方法の応用 - Google Patents
特に炭素、炭化シリコンについての耐火性物質の化学気相浸透方法、及びその方法の応用Info
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/10—Chemical vapor infiltration, i.e. CVI
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.耐火性物質、特に炭素(C)及び炭化シリコン(SiC)、の等圧及び等温の化学 気相浸透法の為の多孔構造の中の拡散に基づいた、多孔構造が反応領域において ガスの流れによって処理される方法であって、 (a)反応領域内のある温度において、ガスの圧力又は、場合によっては、ガス に含まれる排出ガスの分圧及び反応領域内のガスの持続時間が以下のように設定 される方法。 (a1)析出反応が、飽和吸着の前記圧力又は分圧領域のそれぞれの領域内に おける多孔構造の中で起き、それによって飽和吸着が前記ガスの圧力又は 前記排出ガスの分圧のそれぞれの上昇の時に、析出速度が実質的に一定に 保たれる又は無視できるぐらい増加されることを意味し、 (a2)浸透の全ての段階における排出ガスの変態が、反応領域内を通る流れ によって、固相を形成し、排出ガスの中で運搬される要素の50%未満、好 ましくは10%から25%が堆積されるよう限られ、 (b)1から50mm、好ましくは25mm未満の実質的に等しい幅をもつ開口部 を底から頂点まで通る線形的に発生するガスの流れに伴う多孔構造の処理が生じ る。 2.Cの気相浸透の為に、反応領域の温度が1,000から1,200℃の範囲内に調節さ れた請求項1に記載の方法。 3.SiCの気相浸透の為に、反応領域の温度が900から1,100℃の範囲内に調節され た請求項1に記載の方法。 4.多孔構造が流れに処理されるガスが、アルゴン、及び窒素等のごとく、いか なる希ガスにも混合されない請求項1から4のいずれかに記載の方法。 5.Cの気相浸透の為に、自然ガス、好ましくはメタンが排出ガスとして使用さ れる請求項1、2、又は4のいずれかに記載の方法。 6.SiCの気相浸透の為に、メチルトリクロロシラン、好ましくはメチルトリクロ ロシランと水素の混合物が排出ガスとして使用される請求項1、3、又は4 のいずれかに記載の方法。 7.メチルトリクロロシランと水素とのモル比が、1:1から1:100、好ましくは 1:2から1:10の請求項6に記載の方法。 8.多孔構造が気相浸透の間に生成された副産物を備えたガスの流れによって処 理される請求項1から7のいずれかに記載の方法。 9.Cの気相浸透の為に、水素が排出ガスと混合された請求項8に記載の方法。 10.メタン又は、場合によっては、自然ガスと、それらに混合される水素との体 比が、20:1から2:1、好ましくは10:1から5:1の請求項9に記載の方法 。 11.SiCの気相浸透の為に、塩化水素が排出ガスと混合される請求項8に記載の方 法。 12.メチルトリクロロシランとそれに混合される塩化水素とのモル比が、5:1か ら1:5、好ましくは3:1から1:2の請求項11に記載の方法。 13.進行する浸透時間に伴って反応領域内の、 a)圧力又は排出ガスの分圧及び/又は b)温度 が連続的に減少される請求項1から12のいずれかに記載の方法。 14.反応領域の加熱が、熱された壁の反応器の原理に従って起こる請求項1から 13のいずれかに記載の方法。 15.進行する進行時間に伴って、垂直部分が反応領域の底から頂点まで連続して 又は段階的に移動することによって、反応領域の各垂直部分において反応領 域が加熱される請求項14に記載の方法。 16.多孔構造が、それぞれの断面の高さにおいて多孔構造に占められていない流 れが通る領域を伴うようにして反応領域を構成する反応器の内部に置かれ、 反応領域の高さ全体に沿って各々の断面領域を通して等しい厚さをもたらす ために、前記流れが通る領域が、多孔構造の等高線に対応するよう寸法され 、反応器の内部が、反応器の底部に付けられたガス入口及び反応器の頭部に 付けられたガス出口を通って垂直に流れる請求項1から15のいずれかに記 載の方法。 17.反応器の内部に多孔構造の形状を形成する台が、多孔構造によって占められ ていない反応領域内の領域を占める。位置に設定され、台又は多孔構造のど ちらによっても占められていない反応領域の高さにわたって一定に、全ての の高さにおいて断面を通る流れが残る請求項16に記載の方法。 18.反応器内部がそれぞれの反応領域の一つにおいて加熱され、加熱領域が段階 的に又は連続して底から頂点まで移動する請求項16又は17のいずれかに 記載の方法。 19.反応領域が固定されており、多孔構造が連続して又は段階的に固定した反応 領域に運び込まれ、反応領域を通って移動するような反応領域において多孔 構造がガスの流れに処理される請求項1から15のいずれかに記載の方法。 20.ガスが循環される請求項1から19のいずれかに記載の方法。 21.反応領域を離れたガスの一部が導き去られ、排出ガスと置き換えられる請求 項20に記載の方法。 22.化学気相析出の揮発性の中間生成物が、反応領域から離れたガスと、このガ スが導き去られて排出ガスと置き換えられる前に分離される請求項21に記 載の方法。 23.化学気相析出の揮発性の中間生成物が、渦層内において反応器から離れるガ ス と反応領域内の温度より低い温度において分解されることによって分離され る請求項22に記載の方法。 24.加熱圧縮等の更なる緻密にする処理を伴わない請求項1から23のいずれか の化学気相浸透法によって製造された、8mm、好ましくは15mmより大き い材料強度と、12、好ましくは10%より小さい多孔性に対応する88%、好ま しくは90%より大きい孔隙充填程度とを示す、特にC-又はSiC-基質の耐火性 物質によってつくられた基質をもつ繊維強化合成物。 25.垂直照明顕微鏡を用いた顕微鏡写真が、変化する構造の領域を欠く均一の構 造を示す請求項24に記載の繊維強化セラミック基質合成材料。 26.均一の等方性構造を伴った炭素基質を示す請求項24又は25に記載の繊維 強化セラミック基質合成材料。 27.均一の層状構造を伴った炭素基質を示す請求項24又は25に記載の繊維強 化セラミック基質合成材料。 28.加熱圧縮等の更なる緻密にする処理を伴わない請求項1から23のいずれか の化学気相浸透法によって製造された、8mm、好ましくは15mmより大き い材料強度と、12、好ましくは10%より小さい多孔性に対応する88%、好ま しくは90%より大きい孔隙充填程度とを示す、特にC-又はSiC-基質の耐火性 物質の基質をもつ繊維強 化合成物によってつくられたブレーキパッド。 29.加熱圧縮等の更なる緻密にする処理を伴わない請求項1から23のいずれか の化学気相浸透法によって製造された、8mm、好ましくは15mmより大き い材料強度と、12、好ましくは10%より小さい多孔性に対応する88%、好ま しくは90%より大きい孔隙充填程度とを示す、特にC-又はSiC-基質の耐火性 物質の基質をもつ繊維強化合成物によってつくられた骨又は関節人工器官。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE19646094A DE19646094C2 (de) | 1996-11-08 | 1996-11-08 | Verfahren zur chemischen Gasphaseninfiltration von refraktären Stoffen, insbesondere Kohlenstoff und Siliziumkarbid, sowie Verwendung des Verfahrens |
DE19646094.8 | 1996-11-08 | ||
PCT/DE1997/002597 WO1998021163A1 (de) | 1996-11-08 | 1997-11-07 | Verfahren zur chemischen gasphaseninfiltration von refraktären stoffen, insbesondere kohlenstoff und siliciumcarbid |
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JP2001508388A true JP2001508388A (ja) | 2001-06-26 |
JP4600893B2 JP4600893B2 (ja) | 2010-12-22 |
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JP52203098A Expired - Lifetime JP4600893B2 (ja) | 1996-11-08 | 1997-11-07 | 特に炭素、炭化シリコンについての耐火性物質の化学気相浸透方法、及びその方法の応用 |
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US (1) | US6197374B1 (ja) |
EP (1) | EP0946459B1 (ja) |
JP (1) | JP4600893B2 (ja) |
CN (1) | CN1097037C (ja) |
AT (1) | ATE195308T1 (ja) |
AU (1) | AU7179498A (ja) |
CA (1) | CA2271678A1 (ja) |
DE (2) | DE19646094C2 (ja) |
IL (1) | IL129829A (ja) |
WO (1) | WO1998021163A1 (ja) |
Cited By (5)
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JP2008528415A (ja) * | 2005-01-24 | 2008-07-31 | スネクマ・プロピュルシオン・ソリド | 熱分解炭素により多孔質基材を緻密化するための化学気相浸透法 |
WO2014027472A1 (ja) | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
JP2015501884A (ja) * | 2012-01-10 | 2015-01-19 | ツェーファオテー ゲーエムベーハー ウント コー カーゲー | 屈折物質の化学蒸気浸透法 |
US10167549B2 (en) | 2014-02-17 | 2019-01-01 | Ihi Corporation | Heat-resistant composite material production method and production device |
US10221104B2 (en) | 2014-02-25 | 2019-03-05 | Ihi Corporation | Heat-resistant composite material production method and production device |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
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GB9821277D0 (en) * | 1998-10-01 | 1998-11-25 | Geco As | Seismic data acquisition equipment control system |
DE10009530A1 (de) * | 2000-02-29 | 2001-09-13 | Klaus J Huettinger | Verfahren zur Chemischen Gasphaseninfiltration von refraktären Stoffen, insbesondere Kohlenstoff, sowie von faserverstärktem Kohlenstoff |
DE10101546B4 (de) * | 2001-01-15 | 2005-04-28 | Man Technologie Gmbh | Verfahren zur Herstellung einer hochtemperaturfesten Faserverbundkeramik und so hergestellte Bauteile |
DE10143874A1 (de) * | 2001-09-07 | 2003-03-27 | Sintec Keramik Gmbh & Co Kg | Knochen-Implantat und Verfahren zum Herstellen desselben |
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- 1997-11-07 IL IL12982997A patent/IL129829A/en not_active IP Right Cessation
- 1997-11-07 DE DE59702165T patent/DE59702165D1/de not_active Expired - Lifetime
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JP2008528415A (ja) * | 2005-01-24 | 2008-07-31 | スネクマ・プロピュルシオン・ソリド | 熱分解炭素により多孔質基材を緻密化するための化学気相浸透法 |
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JP2015501884A (ja) * | 2012-01-10 | 2015-01-19 | ツェーファオテー ゲーエムベーハー ウント コー カーゲー | 屈折物質の化学蒸気浸透法 |
WO2014027472A1 (ja) | 2012-08-17 | 2014-02-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
JP5906318B2 (ja) * | 2012-08-17 | 2016-04-20 | 株式会社Ihi | 耐熱複合材料の製造方法及び製造装置 |
US9822445B2 (en) | 2012-08-17 | 2017-11-21 | Ihi Corporation | Method for manufacturing heat-resistant composite material |
US10167549B2 (en) | 2014-02-17 | 2019-01-01 | Ihi Corporation | Heat-resistant composite material production method and production device |
US10221104B2 (en) | 2014-02-25 | 2019-03-05 | Ihi Corporation | Heat-resistant composite material production method and production device |
Also Published As
Publication number | Publication date |
---|---|
CA2271678A1 (en) | 1998-05-22 |
AU7179498A (en) | 1998-06-03 |
DE19646094C2 (de) | 1999-03-18 |
DE19646094A1 (de) | 1998-05-28 |
ATE195308T1 (de) | 2000-08-15 |
CN1097037C (zh) | 2002-12-25 |
JP4600893B2 (ja) | 2010-12-22 |
EP0946459A1 (de) | 1999-10-06 |
US6197374B1 (en) | 2001-03-06 |
IL129829A0 (en) | 2000-02-29 |
WO1998021163A1 (de) | 1998-05-22 |
IL129829A (en) | 2002-12-01 |
CN1244186A (zh) | 2000-02-09 |
EP0946459B1 (de) | 2000-08-09 |
DE59702165D1 (de) | 2000-09-14 |
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