JP2001501162A - SiC層中にボロンをドープされた領域を生成する方法 - Google Patents
SiC層中にボロンをドープされた領域を生成する方法Info
- Publication number
- JP2001501162A JP2001501162A JP10516435A JP51643598A JP2001501162A JP 2001501162 A JP2001501162 A JP 2001501162A JP 10516435 A JP10516435 A JP 10516435A JP 51643598 A JP51643598 A JP 51643598A JP 2001501162 A JP2001501162 A JP 2001501162A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- layer
- boron
- sic layer
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.ボロン原子をドープされた少なくとも1つの領域を有するSiCの結晶層 を作る方法であって、結晶性SiCの層(1)中へボロンを注入する段階a)、 およびSiC層中に注入されたボロンを電気的に活性化させるためにSiC層を 焼鈍するための加熱をおこなう段階b)を有する方法に於いて、 段階b)を実行する前にSiC層中に存在する炭素の空孔に関して過剰に炭素 割込みを形成するため、該層(1)に炭素原子を注入する段階c)を有し、該段 階c)は、段階a)の前に実行される、あるいは段階a)の後に実行される、あ るいは段階a)と同時に実行されることを特徴とする上記方法。 2.請求項1による方法に於いて、段階c)において注入される炭素の量は、 段階b)の焼鈍中に、SiC層の領域におけるシリコン原子のための位置へ段階 a)において注入されるボロンの大部分を向けるように選択されることを特徴と する上記方法。 3.請求項2による方法に於いて、注入されるボロンの量は、SiC層の領域 における該シリコンの位置に位置するボロンの所定の濃度を得るため、段階a) 中に制御されることを特徴とする上記方法。 4.請求項2または請求項3による方法に於いて、ボロンは、SiC領域の低 い抵抗を得るためSiC中のボロンの固溶限度に近い量において、段階a)中に 注入されることを特徴とする上記方法。 5.SiCの少なくとも1つの層を有する半導体デバイスに於いて、該層が請 求項1から4のいずれかによる方法を実行する間に作られることを特徴とする上 記方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9603608A SE9603608D0 (sv) | 1996-10-03 | 1996-10-03 | A method for producing a region doped with boron in a SiC-layer |
SE9603608-2 | 1996-10-03 | ||
US08/735,389 US6703294B1 (en) | 1996-10-03 | 1996-10-21 | Method for producing a region doped with boron in a SiC-layer |
PCT/SE1997/001615 WO1998014645A1 (en) | 1996-10-03 | 1997-09-25 | A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2001501162A true JP2001501162A (ja) | 2001-01-30 |
JP4141505B2 JP4141505B2 (ja) | 2008-08-27 |
Family
ID=32473861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51643598A Expired - Lifetime JP4141505B2 (ja) | 1996-10-03 | 1997-09-25 | SiC層中にボロンをドープされた領域を生成する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6703294B1 (ja) |
EP (1) | EP0931187B1 (ja) |
JP (1) | JP4141505B2 (ja) |
DE (1) | DE69719527T2 (ja) |
SE (1) | SE9603608D0 (ja) |
WO (1) | WO1998014645A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053667A (ja) * | 2006-07-28 | 2008-03-06 | Central Res Inst Of Electric Power Ind | SiC結晶の質を向上させる方法およびSiC半導体素子 |
JP2013048247A (ja) * | 2006-07-28 | 2013-03-07 | Central Research Institute Of Electric Power Industry | SiCバイポーラ型半導体素子 |
JP2014229708A (ja) * | 2013-05-21 | 2014-12-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP2015179781A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | SiCエピタキシャル基板の製造方法、半導体装置の製造方法および半導体装置 |
JPWO2015072210A1 (ja) * | 2013-11-13 | 2017-03-16 | 三菱電機株式会社 | 半導体装置の製造方法、および、半導体装置 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7618880B1 (en) * | 2004-02-19 | 2009-11-17 | Quick Nathaniel R | Apparatus and method for transformation of substrate |
US8617965B1 (en) * | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
US8940598B2 (en) * | 2010-11-03 | 2015-01-27 | Texas Instruments Incorporated | Low temperature coefficient resistor in CMOS flow |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
WO2017053518A1 (en) * | 2015-09-25 | 2017-03-30 | The Government Of The Usa, As Represented By The Secretary Of The Navy | Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology |
JP2019117871A (ja) * | 2017-12-27 | 2019-07-18 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US11127817B2 (en) * | 2018-07-13 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation of semiconductor device structure by implantation |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209474A (en) | 1977-08-31 | 1980-06-24 | General Electric Company | Process for preparing semiconducting silicon carbide sintered body |
ZA933939B (en) * | 1992-06-05 | 1993-12-30 | De Beers Ind Diamond | Diamond doping |
US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
US5318915A (en) * | 1993-01-25 | 1994-06-07 | North Carolina State University At Raleigh | Method for forming a p-n junction in silicon carbide |
US5543637A (en) * | 1994-11-14 | 1996-08-06 | North Carolina State University | Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
WO1996020298A1 (de) | 1994-12-27 | 1996-07-04 | Siemens Aktiengesellschaft | Verfahren zum herstellen von mit bor dotiertem, einkristallinem siliciumcarbid |
-
1996
- 1996-10-03 SE SE9603608A patent/SE9603608D0/xx unknown
- 1996-10-21 US US08/735,389 patent/US6703294B1/en not_active Expired - Lifetime
-
1997
- 1997-09-25 JP JP51643598A patent/JP4141505B2/ja not_active Expired - Lifetime
- 1997-09-25 WO PCT/SE1997/001615 patent/WO1998014645A1/en active IP Right Grant
- 1997-09-25 DE DE69719527T patent/DE69719527T2/de not_active Expired - Lifetime
- 1997-09-25 EP EP97944245A patent/EP0931187B1/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008053667A (ja) * | 2006-07-28 | 2008-03-06 | Central Res Inst Of Electric Power Ind | SiC結晶の質を向上させる方法およびSiC半導体素子 |
JP2013048247A (ja) * | 2006-07-28 | 2013-03-07 | Central Research Institute Of Electric Power Industry | SiCバイポーラ型半導体素子 |
JP2014229708A (ja) * | 2013-05-21 | 2014-12-08 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JPWO2015072210A1 (ja) * | 2013-11-13 | 2017-03-16 | 三菱電機株式会社 | 半導体装置の製造方法、および、半導体装置 |
JP2015179781A (ja) * | 2014-03-19 | 2015-10-08 | 株式会社東芝 | SiCエピタキシャル基板の製造方法、半導体装置の製造方法および半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE69719527D1 (de) | 2003-04-10 |
EP0931187B1 (en) | 2003-03-05 |
WO1998014645A1 (en) | 1998-04-09 |
US6703294B1 (en) | 2004-03-09 |
DE69719527T2 (de) | 2003-12-24 |
JP4141505B2 (ja) | 2008-08-27 |
SE9603608D0 (sv) | 1996-10-03 |
EP0931187A1 (en) | 1999-07-28 |
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