JP2001217185A - End surface thin-film removing device - Google Patents
End surface thin-film removing deviceInfo
- Publication number
- JP2001217185A JP2001217185A JP2000067722A JP2000067722A JP2001217185A JP 2001217185 A JP2001217185 A JP 2001217185A JP 2000067722 A JP2000067722 A JP 2000067722A JP 2000067722 A JP2000067722 A JP 2000067722A JP 2001217185 A JP2001217185 A JP 2001217185A
- Authority
- JP
- Japan
- Prior art keywords
- head
- substrate
- resist
- face
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、液晶パネル基板、半導
体用マスク、および液晶パネル用マスクなど薄膜例え
ば、レジストが塗布された基板の端面の薄膜を除去する
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for removing a thin film such as a liquid crystal panel substrate, a semiconductor mask, and a liquid crystal panel mask, for example, a thin film on an end face of a substrate coated with a resist.
【０００２】[0002]
【従来の技術】半導体用マスクを例にとり説明する。2. Description of the Related Art A semiconductor mask will be described as an example.
【０００３】半導体用マスクは、１５２ｍｍ正方で厚み
６．３ｍｍの石英基板に約０．１ミクロンのクロム膜を
スパッタし、その上にレジストを回転式のレジスト塗布
装置で約０．５ミクロン厚さに塗布する。[0003] A semiconductor mask is formed by sputtering a chromium film of about 0.1 micron on a quartz substrate of 152 mm square and 6.3 mm in thickness, and applying a resist thereon to a thickness of about 0.5 micron using a rotary resist coating apparatus. Apply to.
【０００４】回転式で塗布するとレジストは、マスクの
最外周の上端面、および、マスク側面、さらに、マスク
下面にまでレジストが付着する。一方、マスク搬送ロボ
ットが、マスクの端面に接触するため、レジストが剥が
れてゴミ発生の原因になりマスクパターンの欠陥になる
という問題がある。When the resist is applied by a rotary method, the resist adheres to the upper end surface of the outermost periphery of the mask, the side surface of the mask, and even to the lower surface of the mask. On the other hand, since the mask transport robot comes into contact with the end face of the mask, there is a problem in that the resist is peeled off, causing dust to be generated, resulting in a defect in the mask pattern.
【０００５】基板の外周レジストを除去するため、特開
平０６−２５０３８０が提案されている。この提案は、
基板上面のノズルから基板の外向きに溶剤を噴射して基
板周縁部のレジストを飛散させて除去する方法、およ
び、装置である。Japanese Patent Application Laid-Open No. 06-250380 has been proposed to remove the outer peripheral resist of a substrate. This proposal,
A method and apparatus for spraying a solvent outward from a nozzle from a nozzle on an upper surface of a substrate to scatter and remove a resist on a peripheral portion of the substrate.
【０００６】上記提案は、基板の側面、斜面、または、
下面に付着した薄膜を除去できないという欠陥がある。[0006] The above proposal is directed to the side, slope, or
There is a defect that the thin film attached to the lower surface cannot be removed.
【０００７】さらにまた、上記提案は、溶剤を強く噴射
するため溶剤ミストが基板に付着したり、飛散したレジ
ストが基板に再付着して基板を汚染するという欠陥があ
る。Furthermore, the above-mentioned proposal has a defect that the solvent mist adheres to the substrate because the solvent is strongly jetted, and the scattered resist adheres to the substrate to contaminate the substrate.
【０００８】[0008]
【発明が解決しようとする課題】本発明の目的は、基板
の上端面、斜面、側面、および、下端面の薄膜を高精度
に、かつ、高品質に除去する小型の端面薄膜装置を提供
することである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a small end face thin film apparatus for removing a thin film on an upper end face, an inclined face, a side face, and a lower end face of a substrate with high precision and high quality. That is.
【０００９】また、本発明の目的は、基板を汚染する危
険がない端面薄膜の除去装置を提供することである。Another object of the present invention is to provide an end face thin film removing apparatus which does not have a risk of contaminating a substrate.
【００１０】[0010]
【問題を解決するための手段】本発明は、基板を載置す
るステージと、剥離液を吐出する吐出孔と導入溝と吸引
孔を備えたヘッドと、前記基板と前記ヘッドを相対的に
移動する移動手段と、剥離液吐出手段と、吸引手段を具
備したことを特徴とする。According to the present invention, there is provided a stage on which a substrate is placed, a head having a discharge hole for discharging a stripping liquid, an introduction groove, and a suction hole, and relatively moving the substrate and the head. Moving means, a stripper discharge means, and a suction means.
【００１１】[0011]
【実施例】以下、本発明を半導体用マスクのレジスト除
去を例にとり、図面を参照して説明する。図１は、本発
明の第１の実施例のヘッドの縦断面図である。図２は、
図１のヘッドの斜視図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings, taking removal of a resist from a semiconductor mask as an example. FIG. 1 is a longitudinal sectional view of a head according to a first embodiment of the present invention. FIG.
FIG. 2 is a perspective view of the head of FIG. 1.
【００１２】回転方式でクロム１６の上にレジストを塗
布するとマスク１０の上端面１４ａ、斜面１４ｂ、およ
び、側面１４ｃにレジストが付着する。さらに、マスク
１０の下端面にまでレジストが付着することもある。When a resist is applied on the chromium 16 by a rotating method, the resist adheres to the upper end surface 14a, the inclined surface 14b, and the side surface 14c of the mask 10. Further, the resist may adhere to the lower end surface of the mask 10.
【００１３】ヘッド１は、マスク１０の上端面と側面を
カバーした逆Ｌ型をなしている。剥離液は、ヘッド１の
入力口２から供給され、吐出孔３から吐出する。The head 1 has an inverted L shape covering the upper end surface and side surfaces of the mask 10. The stripper is supplied from the input port 2 of the head 1 and is discharged from the discharge holes 3.
【００１４】側面の吸引孔５から減圧吸引すると、剥離
液は導入溝４に沿って流れる。その間マスク１０の上端
面、斜面、および、側面に付着したレジスト１４ａ、１
４ｂ、１４ｃは溶解され、排出口６から排出される。When suction is performed under reduced pressure through the suction hole 5 on the side surface, the stripping solution flows along the introduction groove 4. In the meantime, the resists 14a and 1a, 1
4b and 14c are dissolved and discharged from the outlet 6.
【００１５】剥離液としては、アセトン、メチルエチル
ケトン、エステル等の有機溶剤が使用される。An organic solvent such as acetone, methyl ethyl ketone, or an ester is used as the stripping solution.
【００１６】図３は、本発明のヘッドと基板の移動手段
を示す平面図である。図４は、マスクを載置したステー
ジの立面図である。FIG. 3 is a plan view showing a head and substrate moving means of the present invention. FIG. 4 is an elevation view of a stage on which a mask is mounted.
【００１７】マスク１０はステージ３３に載置され、真
空パッド３４で固着する。ヘッド１はアーム３０に連結
した送りネジ３１とモーター３２で、ヘッド１を直線的
に移動し、マスク１０の一辺の上端面のレジスト１４
ａ、斜面のレジスト１４ｂ、および、側面のレジスト１
４ｃを除去する。The mask 10 is mounted on a stage 33 and fixed by a vacuum pad 34. The head 1 is moved linearly by a feed screw 31 and a motor 32 connected to an arm 30, and the resist 14 on the upper end surface of one side of the mask 10 is moved.
a, slope resist 14b, and side resist 1
4c is removed.
【００１８】次に、ヘッド１をマスク１０から十分に離
れた位置まで移動した後、マスク１０を載置したステー
ジ３３をパルスモータ３５で９０度回転する。その後、
ヘッド１を再度直線的に移動し、第２の辺の端面レジス
トを除去する。同様にして第３、第４の端面レジストを
除去する。あるいは、図３のヘッド１と直線移動手段を
２組、または、４組装備して、２回、または、１回のヘ
ッド移動で端面レジストを除去してもよい。Next, after moving the head 1 to a position sufficiently distant from the mask 10, the stage 33 on which the mask 10 is mounted is rotated 90 degrees by the pulse motor 35. afterwards,
The head 1 is moved linearly again to remove the end face resist on the second side. Similarly, the third and fourth end face resists are removed. Alternatively, two sets or four sets of the head 1 and the linear moving means of FIG. 3 may be provided to remove the end face resist by two or one head movement.
【００１９】ヘッド１と基板端面間の距離１３を２ｍｍ
以下にすることによって、基板の上端面、および、側面
のレジストを効率的に除去することができる。The distance 13 between the head 1 and the end face of the substrate is 2 mm
By doing so, the resist on the upper end surface and the side surface of the substrate can be efficiently removed.
【００２０】図５は、レジストを除去したマスクの断面
図である。図１の上端面のレジスト１４ａ、斜面のレジ
スト１４ｂ、および、側面のレジスト１４ｃがきれいに
除去されている。FIG. 5 is a sectional view of the mask from which the resist has been removed. The resist 14a on the upper end surface, the resist 14b on the inclined surface, and the resist 14c on the side surface in FIG.
【００２１】図６は、本発明の剥離液吐出手段と吸引手
段の配管図である。FIG. 6 is a piping diagram of the stripping solution discharge means and the suction means of the present invention.
【００２２】剥離液タンク２０の加圧口２１を窒素で加
圧し、バルブ２２と調整弁２３で、流量制御して、剥離
液２４をヘッド１に供給する。The pressurizing port 21 of the stripper tank 20 is pressurized with nitrogen, the flow rate is controlled by the valve 22 and the regulating valve 23, and the stripper 24 is supplied to the head 1.
【００２３】レジストを溶解した剥離液は、バルブ２５
を経由して、真空ポンプ２７で吸引され、回収タンク２
６で気液分離を行う。The stripping solution in which the resist has been dissolved is supplied to a valve 25.
Through the vacuum tank 27 and the collection tank 2
In step 6, gas-liquid separation is performed.
【００２４】図７は、本発明の第２の実施例のヘッドの
縦断面図である。図１と同一名称には、同一符号を付し
た。FIG. 7 is a longitudinal sectional view of a head according to a second embodiment of the present invention. 1 are given the same reference numerals.
【００２５】本第２の実施例は、マスク１０の上端面の
レジスト１４ａと、斜面のレジスト１４ｂ、側面のレジ
スト１４ｃと、さらに、下端面のレジスト１４ｄを除去
するヘッドである。ヘッド１はマスク１０の上端面、側
面、および、下端面をカバーするコの字型をなしてい
る。The second embodiment is a head for removing the resist 14a on the upper end surface of the mask 10, the resist 14b on the inclined surface, the resist 14c on the side surface, and the resist 14d on the lower end surface. The head 1 has a U-shape that covers the upper end surface, the side surface, and the lower end surface of the mask 10.
【００２６】剥離液は、ヘッド１の入力口２から供給さ
れ、吐出口３から吐出する。The stripper is supplied from the input port 2 of the head 1 and discharged from the discharge port 3.
【００２７】下面の吸引孔５から吸引すると、剥離液は
導入溝４に沿って流れ、その間、マスク１０の上端面、
斜面、および、側面、さらに、下端面に付着したレジス
ト１４ａ、１４ｂ、１４ｃ、１４ｄを溶解し、排出口６
から排出する。When sucked through the suction hole 5 on the lower surface, the stripping solution flows along the introduction groove 4, during which the upper surface of the mask 10,
The resists 14a, 14b, 14c, and 14d attached to the slopes, side surfaces, and the lower end surface are dissolved, and the outlet 6
Discharged from
【００２８】他の３辺の端面レジストは、第１の実施例
の場合と同様に行う。The other three end face resists are formed in the same manner as in the first embodiment.
【００２９】図８は、本発明の第３の実施例のヘッドの
縦断面図である。図１と同一名称には、同一符号を付し
た。FIG. 8 is a longitudinal sectional view of a head according to a third embodiment of the present invention. 1 are given the same reference numerals.
【００３０】本第３の実施例は、第１図における剥離液
吐出口３が２個の場合の例である。The third embodiment is an example in which there are two release liquid discharge ports 3 in FIG.
【００３１】剥離液は、入力口２ａ、２ｂから供給さ
れ、吐出口３ａ、３ｂから吐出する。The stripper is supplied from the input ports 2a and 2b and is discharged from the discharge ports 3a and 3b.
【００３２】吸引孔５から吸引すると剥離液は導入溝４
ａ、４ｂに沿って流れ、マスク１０の端面に付着したレ
ジスト１４ａ、１４ｂ、１４ｃを溶解し、排出口６から
排出する。When sucked from the suction hole 5, the stripping solution is introduced into the introduction groove 4.
The resists 14a, 14b, and 14c that flow along the lines a and 4b and adhere to the end face of the mask 10 are melted and discharged from the outlet 6.
【００３３】上記説明では、除去する薄膜がレジストで
ある場合について述べたが、本発明はこれに限定される
ものではなく、レジストの上に塗布される水溶性導電ポ
リマーであっても、同様に本発明を実現できる。通常、
導電ポリマーの剥離液は純水を使用する。In the above description, the case where the thin film to be removed is a resist has been described. However, the present invention is not limited to this, and the same applies to a water-soluble conductive polymer applied on the resist. The present invention can be realized. Normal,
Pure water is used as the stripping solution for the conductive polymer.
【００３４】上記説明では、基板が角型である場合につ
いて述べたが、丸型であっても本発明を実現できる。な
お、丸型の基板の場合、ヘッドを固定し、基板を回転す
ることによって、本発明を実現することができる。In the above description, the case where the substrate is square is described, but the present invention can be realized even if the substrate is round. In the case of a round substrate, the present invention can be realized by fixing the head and rotating the substrate.
【００３５】[0035]
【発明の効果】以上説明したように、本発明は次のよう
な効果を奏するものである。基板端面の薄膜を高精度
に、かつ、高品質に除去し、クリーンな基板を作成する
ことができる。As described above, the present invention has the following effects. The thin film on the end face of the substrate can be removed with high precision and high quality, and a clean substrate can be produced.
【図１】本発明の第１の実施例のヘッドの縦断面図であ
る。FIG. 1 is a longitudinal sectional view of a head according to a first embodiment of the present invention.
【図２】図１のヘッドの斜視図である。FIG. 2 is a perspective view of the head of FIG. 1;
【図３】本発明のヘッドと基板の移動手段を示す平面図
である。FIG. 3 is a plan view showing a head and substrate moving means of the present invention.
【図４】マスクを載置したステージの立面図である。FIG. 4 is an elevation view of a stage on which a mask is mounted.
【図５】レジストを除去したマスク１０の断面図であ
る。FIG. 5 is a cross-sectional view of the mask 10 from which a resist has been removed.
【図６】本発明の剥離液吐出手段と吸引手段の配管図で
ある。FIG. 6 is a piping diagram of a stripping solution discharge unit and a suction unit of the present invention.
【図７】本発明の第２の実施例のヘッドの縦断面図であ
る。FIG. 7 is a longitudinal sectional view of a head according to a second embodiment of the present invention.
【図８】本発明の第３の実施例のヘッドの縦断面図であ
る。FIG. 8 is a longitudinal sectional view of a head according to a third embodiment of the present invention.
１…ヘッド、２…入力口、３…吐出口、４…導入溝、５
…吸引口、６…排出口 １０…マスク、１３…ヘッドと端面間の距離、１４…レ
ジスト、１６…クロム、２０…剥離液タンク、２１…加
圧口、２２、２５…バルブ、２３…調整弁、２４…剥離
液、２６…回収タンク、２７…真空ポンプ、３０…アー
ム、３１…送りネジ、３２、３５…モータ、３３…ステ
ージ、３４…真空パッド。DESCRIPTION OF SYMBOLS 1 ... Head, 2 ... Input port, 3 ... Discharge port, 4 ... Introduction groove, 5
... Suction port, 6 ... Discharge port 10 ... Mask, 13 ... Distance between head and end face, 14 ... Resist, 16 ... Chrome, 20 ... Removal liquid tank, 21 ... Pressure port, 22, 25 ... Valve, 23 ... Adjustment Valves, 24: stripper, 26: recovery tank, 27: vacuum pump, 30: arm, 31: feed screw, 32, 35: motor, 33: stage, 34: vacuum pad.
Claims (5)
端面の薄膜を除去する装置において、前記基板を載置す
るステージと、剥離液吐出孔と導入溝と吸引孔を備えた
ヘッドと、前記基板と前記ヘッドを相対的に移動する移
動手段と、剥離液吐出手段と、吸引手段を具備したこと
を特徴とする端面薄膜除去装置。1. An apparatus for horizontally mounting a substrate on which a thin film is applied and removing the thin film on an end face, a head having a stage on which the substrate is mounted, a release liquid discharge hole, an introduction groove, and a suction hole. And a moving means for relatively moving the substrate and the head, a stripping liquid discharging means, and a suction means.
出口、側部に吸引口を具備したことを特徴とする前記請
求項１記載の端面薄膜除去装置。2. The end face thin film removing apparatus according to claim 1, wherein the head has an inverted L shape, and has a stripping liquid discharge port on an upper portion and a suction port on a side portion.
吐出口、下部に吸引口を具備したことを特徴とする前記
請求項１記載の端面薄膜除去装置。3. The end face thin film removing apparatus according to claim 1, wherein the head has a U-shape and has a stripping liquid discharge port at an upper portion and a suction port at a lower portion.
ｍ以下であることを特徴とする前記請求項１記載の端面
薄膜除去装置。4. The distance between the head and the end face of the substrate is 2 m.
2. The end face thin film removing apparatus according to claim 1, wherein m is equal to or less than m.
引口が１個であることを特徴とする前記請求項１記載の
端面薄膜除去装置。5. The end face thin film removing apparatus according to claim 1, wherein the head has two stripping liquid discharge ports and one suction port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000067722A JP2001217185A (en) | 2000-02-04 | 2000-02-04 | End surface thin-film removing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000067722A JP2001217185A (en) | 2000-02-04 | 2000-02-04 | End surface thin-film removing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001217185A true JP2001217185A (en) | 2001-08-10 |
Family
ID=18586873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000067722A Pending JP2001217185A (en) | 2000-02-04 | 2000-02-04 | End surface thin-film removing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001217185A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005260238A (en) * | 2004-03-11 | 2005-09-22 | Dongjin Semichem Co Ltd | Real-time control system of composition for lithography process using near-infrared spectroscope and method for controlling same |
| JP2006332185A (en) * | 2005-05-24 | 2006-12-07 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| JP2008030019A (en) * | 2006-07-31 | 2008-02-14 | Semes Co Ltd | Process apparatus for performing in-shower, inhalation, and drying process |
-
2000
- 2000-02-04 JP JP2000067722A patent/JP2001217185A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005260238A (en) * | 2004-03-11 | 2005-09-22 | Dongjin Semichem Co Ltd | Real-time control system of composition for lithography process using near-infrared spectroscope and method for controlling same |
| JP2006332185A (en) * | 2005-05-24 | 2006-12-07 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
| JP2008030019A (en) * | 2006-07-31 | 2008-02-14 | Semes Co Ltd | Process apparatus for performing in-shower, inhalation, and drying process |
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