JPH0330426A - Wafer rear surface cleaning device - Google Patents
Wafer rear surface cleaning deviceInfo
- Publication number
- JPH0330426A JPH0330426A JP16774489A JP16774489A JPH0330426A JP H0330426 A JPH0330426 A JP H0330426A JP 16774489 A JP16774489 A JP 16774489A JP 16774489 A JP16774489 A JP 16774489A JP H0330426 A JPH0330426 A JP H0330426A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- rear surface
- particles
- organic solvent
- cleaning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 26
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims abstract description 10
- 239000007921 spray Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 abstract description 12
- 239000002904 solvent Substances 0.000 abstract 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 70
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（概 要〕
ウェハー裏面に付着しているパーティクルを除去するウ
ェハー裏面洗浄装置に関し、
製造装置にウェハーをチャッキングした場合、ウェハー
主面のフラットネス（平坦性）をよくすることを目的と
し、
被洗浄ウェハーを複数の周囲端で保持し、且つ、該ウェ
ハーの裏面を露出させたウェハーステージ〔産業上の利
用分野〕
本発明はウェハー裏面に付着しているパーティクルを除
去するウェハー裏面洗浄装置に関する。[Detailed Description of the Invention] (Summary) Regarding a wafer backside cleaning device that removes particles attached to the backside of a wafer, when the wafer is chucked into a manufacturing device, the flatness of the main surface of the wafer is improved. A wafer stage that holds a wafer to be cleaned at a plurality of peripheral edges and exposes the back surface of the wafer [industrial application field] The present invention aims to remove particles attached to the back surface of the wafer. The present invention relates to a wafer backside cleaning device.
近年、半導体装置はＬＳＩ、ＶＬＳＩと高集積化されて
きたが、それに呼応して半導体ウェハーも６〜８インチ
φと大口径化されている。一方、ウェハー面に形成する
パターンは逆に微細化されて、従来の小口径ウェハーの
場合よりもむしろ高精度なパターンが要求されており、
そのためには、従来以上にウェハー面の平坦性（フラッ
トネス；ｆｌａｔｎｅｓｓ）が要求されている。In recent years, semiconductor devices have become highly integrated such as LSI and VLSI, and in response, semiconductor wafers have also become larger in diameter, from 6 to 8 inches in diameter. On the other hand, the patterns formed on the wafer surface are becoming finer and more precise patterns are required than in the case of conventional small-diameter wafers.
For this purpose, flatness of the wafer surface is required more than ever.
Ｃ従来の技術と発明が解決しようとする課題〕ウェハー
プロセスにおいてはフォトリソグラフィ技術が繁用され
ており、それはレジスト塗布。C. Conventional technology and problems to be solved by the invention] Photolithography technology is frequently used in wafer processing, and it is used for resist coating.
露光、現像、エツチングの工程から構成される装るが、
例えば、レジスト塗布工程で使用されているレジスト塗
布装置は、ウェハー面のフラットネスが十分でないとレ
ジスト膜厚が変動して、露光。Although it consists of the steps of exposure, development, and etching,
For example, in the resist coating equipment used in the resist coating process, if the flatness of the wafer surface is not sufficient, the resist film thickness will fluctuate, causing exposure problems.
現像後のパターンにバラツキが生じるという問題がある
。即ち、ウェハーはウェハー裏面をレジスト塗布装置に
真空チャックでチャッキングしてウェハー主面にレジス
トが塗布されるが、裏面に異物が付着しているとチャッ
キングの強い吸引力のために付着部分の主面が凸状にな
り、その上にレジストを塗布すれば、異物付着部分のレ
ジスト膜厚が薄くなる。従って、そのような局所的な膜
厚バラツキのために製造歩留１品質を低下させる問題が
起こる。There is a problem that variations occur in the pattern after development. In other words, resist is applied to the main surface of the wafer by chucking the back side of the wafer into a resist coating device using a vacuum chuck, but if there is foreign matter attached to the back side, the strong suction force of the chucking will cause the attached part to be damaged. If the main surface becomes convex and a resist is applied thereon, the resist film thickness will be thinner at the part where the foreign matter is attached. Therefore, such local variations in film thickness cause a problem of lowering manufacturing yield and quality.
また、同じフォトリングラフィ技術における縮小投影露
光装置においても同様の問題があり、装置内にチャッキ
ングしたウェハー主面に少しでも凹凸があると、局所的
なフォーカスずれ（焦点ずれ）を生じて、そのため精度
良くパターンニングできない部分が発生する。In addition, a similar problem exists in reduction projection exposure equipment using the same photolithography technology, and if there is even a slight unevenness on the main surface of the wafer chucked in the equipment, a local focus shift (focal shift) will occur. As a result, there are portions that cannot be accurately patterned.
このようなウェハー裏面に付着する異物とじてウェハー
の欠けや塵埃などからなるパーティクル（＠粒子ｉ ｐ
ａｒｔｉｃｌｅ）があり、これらのパーティクルはサブ
ミクロン程度の大きさから数μｍ、の大きさのものまで
ある。Such foreign matter adhering to the back surface of the wafer includes particles (@particles i p
These particles range in size from submicron to several μm.
現在、レジスト塗布工程では、例えば、レジスト膜厚１
．２μｍ、誤差上数１０人で、そのバラツキ許容度を３
σで管理しており、そのような非常に高精度なレジスト
膜厚が要求されている。従って、現在もウェハー裏面へ
のパーティクルの付着を少なくするために、ウェハー裏
面への接触を少なくするように製造装置が工夫されてお
り、例えば、フォトリソグラフィ工程におけるインライ
ンシステム（自動化システム）ではベルト搬送に代わる
ロボット搬送がおこなわれている。しかし、それは消極
的な処置で、決して十分なものではない。Currently, in the resist coating process, for example, the resist film thickness is 1
．． 2μm, the error is several 10 people, and the tolerance for variation is 3
The resist film thickness is controlled by σ, and such a highly accurate resist film thickness is required. Therefore, even now, in order to reduce the adhesion of particles to the backside of the wafer, manufacturing equipment is devised to reduce contact with the backside of the wafer. For example, in the inline system (automated system) in the photolithography process, belt transport Robotic transportation is being used instead. However, this is a passive measure and is by no means sufficient.
本発明はこれらのウェハー裏面に付着したパーティクル
を減少させて、製造装置にウェハ・−をチャッキングし
た場合、ウェハー主面のフラットネスをよくすることを
目的としたウェハー裏面洗浄装置を提案するものである
。The present invention proposes a wafer backside cleaning device for the purpose of reducing the particles attached to the backside of a wafer and improving the flatness of the main surface of the wafer when the wafer is chucked in a manufacturing device. It is.
その課題は、被洗浄ウェハーを複数の周囲端で保持し、
且つ、該ウェハーの裏面を露出させたウェハーステージ
を回転させ、該ウェハーの裏面に有機溶剤を噴き付けて
パーティクルを除去するように構成したウェハー裏面洗
浄装置によって解決される。The challenge is to hold the wafer to be cleaned at multiple peripheral edges,
The problem is solved by a wafer backside cleaning device configured to rotate a wafer stage that exposes the backside of the wafer, and spray an organic solvent onto the backside of the wafer to remove particles.
即ち、本発明は回転できるウェハーステージに被洗浄ウ
ェハーの裏面を露出させた状態で取付け、裏面に有機溶
剤を噴き付けてパーティクルを除去させる構成である。That is, the present invention has a configuration in which a wafer to be cleaned is attached to a rotatable wafer stage with its back surface exposed, and an organic solvent is sprayed onto the back surface to remove particles.
かくして、このようなウェハー裏面洗浄装置による処理
工程をチャッキングしてウェハー処理する製造装置の前
に設置する。そうすると、ウェハー主面の凹凸が減少で
きて、ウェハープロセスにおける製造歩留、製品の品質
を改善することができる。Thus, the processing step using such a wafer backside cleaning device is installed in front of a manufacturing device that processes wafers by chucking them. Then, the unevenness on the main surface of the wafer can be reduced, and the manufacturing yield and product quality in the wafer process can be improved.
以下に図面を参照して実施例によって詳細に説明する。 Examples will be described in detail below with reference to the drawings.
第１図は本発明にかかるウェハー裏面洗浄装置の要部断
面図、第２図はそのうちのウェハーステージの斜視図を
示しており、図中の記号は両図に共通して、１はウェハ
ーステージ、２は回転シャフト、３は液噴射管９４はカ
バー、５はウェハーである。ウェハーステージｌは４つ
のアーム１１からなり、アーム１１の先にはウェハー裏
面５１がウェハー周囲端で当接して支持され、ウェハー
主面５０の周囲エツジをアーム１１の先端に設けた押さ
え１２によって押圧してウェハー５を固定させている。FIG. 1 is a cross-sectional view of the main parts of a wafer backside cleaning apparatus according to the present invention, and FIG. 2 is a perspective view of a wafer stage thereof. The symbols in the figures are common to both figures, and 1 is a wafer stage. , 2 is a rotating shaft, 3 is a cover for the liquid injection pipe 94, and 5 is a wafer. The wafer stage l consists of four arms 11. The wafer back surface 51 is supported at the tip of the arm 11 in contact with the peripheral edge of the wafer, and the peripheral edge of the wafer main surface 50 is pressed by a presser 12 provided at the tip of the arm 11. The wafer 5 is fixed by doing so.
ウェハーステージ１の中心に円筒形の回転シャフト２を
接続しており、この回転シャフト２の中心には液噴射管
３を導通させて、液噴射管３の先端３０がウェハー裏面
５１にやや離れて位置し、噴射した有機溶剤がウェハー
裏面５１の中央部分に噴き付けられ、ウェハーの回転に
よってウェハー周囲に有機溶剤が拡散して、ウェハー裏
面５１全面に有機溶剤がゆきわたるようになっている。A cylindrical rotating shaft 2 is connected to the center of the wafer stage 1, and a liquid injection tube 3 is connected to the center of the rotation shaft 2, so that the tip 30 of the liquid injection tube 3 is slightly separated from the wafer back surface 51. The organic solvent is sprayed onto the central part of the back surface 51 of the wafer, and as the wafer rotates, the organic solvent is spread around the wafer, so that the organic solvent is spread over the entire back surface 51 of the wafer.
回転シャフト２の回転は側部（←で示す）よりモータと
ギヤー（いずれも図示せず）によって伝達される。しか
し、液噴射管３は回転シャフト２との間に間隙を設けて
固定させており、その液噴射管３の下方から有機溶剤が
注入される。また、カバー４には排気口４１と液排出口
４２が設けである。The rotation of the rotary shaft 2 is transmitted from the side portion (indicated by ←) by a motor and gears (both not shown). However, the liquid injection pipe 3 is fixed with a gap provided between it and the rotating shaft 2, and the organic solvent is injected from below the liquid injection pipe 3. Further, the cover 4 is provided with an exhaust port 41 and a liquid discharge port 42.
ウェハーの保持は、ウェハーステージ１のアーム１１先
端部分において、スプリング１３によって下方に押圧し
ている押さえ１２を上方に開いてウェハー５を４つのア
ームに載せ、次に、押さえ１２を下方に戻してウェハー
５の周囲端を押さえて、４つのアーム１１先端で把持す
る。そして、所望のパーティクルを除去する洗浄処理を
おこなう。To hold the wafer, at the tip of the arm 11 of the wafer stage 1, the presser foot 12, which is pressed downward by the spring 13, is opened upward, the wafer 5 is placed on the four arms, and then the presser foot 12 is returned downward. The peripheral edge of the wafer 5 is held and held by the tips of the four arms 11. Then, a cleaning process is performed to remove desired particles.
次に、具体的実施例について説明すると、有機溶剤には
レジスト溶解液（例えば、商品名Ｘ−５０）を用いて、
回転数を２００Ｏｒｐｍにして回転しながら５秒間噴射
する。その結果、
紛擾０．２〜０．３μｍ３９６個
０．３〜１ μｍ３３５個
ｌＩＪｍ以上 １４２個
合計 ８７３個
のパーティクル数がウェハー裏面に付着していた試料は
紛擾０．２〜０．３ ａｍ ３３０個０．３〜１
μｍ２０１個
１μｍ以上 ４０個
合計 ５７１個
のパーティクル数に減少させることができた。この数字
から判るように、特に紛擾１μｍ以上の大きな粒子の減
少に効果がある。Next, to explain a specific example, using a resist dissolving solution (for example, trade name X-50) as the organic solvent,
Set the rotation speed to 200 rpm and inject for 5 seconds while rotating. As a result, the number of particles attached to the back surface of the wafer was 396 particles of 0.2 to 0.3 μm, 335 particles of 0.3 to 1 μm, 142 particles total of 873 particles, and 330 particles of particle size of 0.2 to 0.3 am. 0.3~1
The number of particles could be reduced to a total of 571 particles (201 μm particles, 40 particles of 1 μm or more). As can be seen from this figure, it is particularly effective in reducing large particles with a diameter of 1 μm or more.
従って、上記のようなウェハー裏面洗浄装置を配置して
、この装置による処理工程をフォトリソグラフィ工程の
前処運上すれば、ウェハー裏面のパーティクルを減少さ
せて、製造歩留２品質を向上させることができる。Therefore, if a wafer backside cleaning device as described above is installed and the processing process performed by this device is performed as a pretreatment process of the photolithography process, particles on the wafer backside can be reduced and manufacturing yield and quality can be improved. I can do it.
なお、上記実施例におけるウェハーのハンドリングと保
持方式とを少し改めれば、本発明にかかるウェハー裏面
洗浄装置をインラインシステムに組み込むことも可能で
ある。Incidentally, by slightly modifying the wafer handling and holding method in the above embodiment, it is also possible to incorporate the wafer backside cleaning apparatus according to the present invention into an in-line system.
且つ、上記実施例においては、噴射させる有機溶剤とし
てレジスト溶解液を使用したが、必ずしもレジスト溶解
液に限るものではなく、速乾性があって残渣の発生しな
い有機溶剤であれば他のものを用いても良い。また、本
発明にかかるウェハー裏面洗浄装置はフォトリソグラフ
ィ工程以外にも適用することができる。In addition, in the above embodiment, a resist solution was used as the organic solvent to be sprayed, but it is not necessarily limited to a resist solution; other organic solvents may be used as long as they are quick-drying and do not generate residue. It's okay. Furthermore, the wafer backside cleaning apparatus according to the present invention can be applied to processes other than photolithography processes.
以上の説弊力）ら明らかなように、本発明にかかるウェ
ハー裏面洗浄装置によればウェハー主面の凹凸を減少で
き、ウェハープロセスにおけるウェハーの製造歩留の向
上と半導体製品の高品質化に役立てることができる。As is clear from the above explanation, the wafer backside cleaning apparatus according to the present invention can reduce the unevenness on the main surface of the wafer, thereby improving the manufacturing yield of wafers in the wafer process and improving the quality of semiconductor products. It can be useful.
視回である。This is the visual circle.
図において、 １はウェハーステージ、 ２は回転シャフト、 ３は液噴射管、 ４はカバー ５はウェハー １１はウェハーステージのアーム、 １２はアーム先端の押さえ、 １３はスプリング、 ３０は液噴射管の先端、 ５０はうエバー主面、 ５１は°ウェハー裏面 を示している。In the figure, 1 is the wafer stage, 2 is a rotating shaft, 3 is a liquid injection pipe, 4 is cover 5 is wafer 11 is the arm of the wafer stage, 12 is the presser at the tip of the arm, 13 is a spring, 30 is the tip of the liquid injection tube, 50 creeping Ever main surface, 51 is the back side of the wafer It shows.
第１図は本発明にかかるウェハー裏面洗浄装置の要部断
面図、FIG. 1 is a sectional view of a main part of a wafer backside cleaning device according to the present invention;
Claims (1)
ハーの裏面を露出させたウェハーステージを回転させて
、該ウェハーの裏面に有機溶剤を噴き付けてパーティク
ルを除去するように構成したことを特徴とするウェハー
裏面洗浄装置。The wafer to be cleaned is held at a plurality of peripheral edges, and a wafer stage exposing the back surface of the wafer is rotated to spray an organic solvent onto the back surface of the wafer to remove particles. Characteristic wafer backside cleaning equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16774489A JPH0330426A (en) | 1989-06-28 | 1989-06-28 | Wafer rear surface cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16774489A JPH0330426A (en) | 1989-06-28 | 1989-06-28 | Wafer rear surface cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0330426A true JPH0330426A (en) | 1991-02-08 |
Family
ID=15855307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16774489A Pending JPH0330426A (en) | 1989-06-28 | 1989-06-28 | Wafer rear surface cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0330426A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5322079A (en) * | 1991-09-27 | 1994-06-21 | Dainippon Screen Mfg. Co., Ltd. | Substrate holding apparatus of a simple structure for holding a rotating substrate, and a substrate processing apparatus including the substrate holding apparatus |
| US5829156A (en) * | 1996-03-19 | 1998-11-03 | Ebara Corporation | Spin dryer apparatus |
| JP2013098477A (en) * | 2011-11-04 | 2013-05-20 | Tokyo Electron Ltd | Substrate processing system, substrate transfer method, program, and computer storage medium |
| US8567339B2 (en) | 2009-06-23 | 2013-10-29 | Tokyo Electron Limited | Liquid processing apparatus |
| JP2014135511A (en) * | 2014-03-26 | 2014-07-24 | Tokyo Electron Ltd | Substrate processing system, substrate transfer method, program, and computer storage medium |
-
1989
- 1989-06-28 JP JP16774489A patent/JPH0330426A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5322079A (en) * | 1991-09-27 | 1994-06-21 | Dainippon Screen Mfg. Co., Ltd. | Substrate holding apparatus of a simple structure for holding a rotating substrate, and a substrate processing apparatus including the substrate holding apparatus |
| US5829156A (en) * | 1996-03-19 | 1998-11-03 | Ebara Corporation | Spin dryer apparatus |
| US8567339B2 (en) | 2009-06-23 | 2013-10-29 | Tokyo Electron Limited | Liquid processing apparatus |
| JP2013098477A (en) * | 2011-11-04 | 2013-05-20 | Tokyo Electron Ltd | Substrate processing system, substrate transfer method, program, and computer storage medium |
| JP2014135511A (en) * | 2014-03-26 | 2014-07-24 | Tokyo Electron Ltd | Substrate processing system, substrate transfer method, program, and computer storage medium |
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