JPS62264622A - Apparatus for manufacture of semiconductor - Google Patents
Apparatus for manufacture of semiconductorInfo
- Publication number
- JPS62264622A JPS62264622A JP10832586A JP10832586A JPS62264622A JP S62264622 A JPS62264622 A JP S62264622A JP 10832586 A JP10832586 A JP 10832586A JP 10832586 A JP10832586 A JP 10832586A JP S62264622 A JPS62264622 A JP S62264622A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- substrate
- semiconductor substrate
- etching
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000002344 surface layer Substances 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 10
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置製造、特にエツチング処理加工用保
護膜の剥離除去を行う装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor device manufacturing, and particularly to an apparatus for peeling and removing a protective film for etching processing.
従来、エツチング処理加工のために用いられた保護膜た
とえば感光性樹脂膜は、複数の半導体基板が入れられた
マガジンケースを高温溶剤槽内に授精させて除去するか
、或いはエツチングガスが導入された真空の反応管内で
電極に高周波電界を印加してプラズマを発生させること
によりこれを除去していた。Conventionally, protective films used for etching processing, such as photosensitive resin films, were removed by inseminating a magazine case containing multiple semiconductor substrates in a high-temperature solvent bath, or by introducing an etching gas. This was removed by applying a high-frequency electric field to the electrodes in a vacuum reaction tube to generate plasma.
上述した前者の方法によれば、高温溶剤の入っている槽
は溜め地方式（循環にするとコスト高及び危険性を招く
）であるため、剥離された保護膜が処理数を増す毎に槽
内へと蓄積し、溶剤内で浮遊した保護膜片が処理済半導
体基板に付着し、次工程の洗浄処理等でも除去すること
ができず、装置の汚染あるいはゴミによる素子パターン
等の不良を発生させていた。又、後者の方法によれば、
半導体基板の大型化に伴い半導体基板面内の剥離速度の
不均一に起因した残存物の発生、あるいは膨大な剥離除
去時間による工期遅延等を起こし半導体装置製造におけ
る製品の歩留低下、品質低下を招いていた。According to the former method described above, the tank containing the high-temperature solvent is a reservoir type (recirculating it causes high cost and danger), so the removed protective film is removed from the tank each time the number of treatments increases. The protective film particles floating in the solvent adhere to the processed semiconductor substrate and cannot be removed even in the next cleaning process, resulting in contamination of the equipment or defects in device patterns due to dust. was. Also, according to the latter method,
As semiconductor substrates become larger, the production of residues due to uneven peeling speed within the surface of the semiconductor substrate, or delays in construction due to the enormous amount of time required to peel and remove, resulting in lower yields and lower quality of products in the manufacturing of semiconductor devices. I was invited.
本発明の目的は半導体基板に対して保護膜の除去を完全
に行なう装置を提供することにある。An object of the present invention is to provide an apparatus that completely removes a protective film from a semiconductor substrate.
本発明は半導体基板からエツチング処理加工用保護膜を
剥離除去する装置において、エツチングガスが導入され
た真空の反応管内で電極に高周波電界を印加してプラズ
マを発生させ半導体基板上に付された保護膜の表面層を
除去処理する機構と、半導体基板を真空吸着しこれを回
転運動させ該半導体基板表面に保護膜を溶解させる溶剤
を滴下あるいは噴霧して保護膜を除去処理する機構とを
有することを特徴とする半導体製造装置である。The present invention is an apparatus for peeling and removing a protective film for etching processing from a semiconductor substrate, in which a high frequency electric field is applied to an electrode in a vacuum reaction tube into which an etching gas is introduced to generate plasma, thereby removing the protective film applied to the semiconductor substrate. It has a mechanism for removing the surface layer of the film, and a mechanism for removing the protective film by vacuum suctioning the semiconductor substrate, rotating it, and dropping or spraying a solvent that dissolves the protective film on the surface of the semiconductor substrate. This is a semiconductor manufacturing device characterized by:
以下、本発明の一実施例について図面を参照して説明す
る。An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例を説明するための断面図であ
る。本発明の半導体製造装置はエツチング処理加工時に
用いられた保護膜を剥離除去する装置であり、エツチン
グ処理加工済の半導体基板１を複数枚収納したマガジン
ケース２の設置台及び搬送系３とガス導入管４及びガス
排出管５と内部に電極７を配置した筒状の反応管６と半
導体基板１を載せるエツチング処理台８とを備えた機構
を前段に設置する。さらに搬送系９と半導体基板１を真
空吸着してこれをパルスモータ−１０にて回転させる基
体１１と、排液口１２を有する下蓋１３と、半導体基板
１上に付された保護膜を溶解させる溶剤を滴下あるいは
噴霧するノズル１４を配置した上蓋１５を備えた機構を
前段の処理機構に連続して設置したものである。FIG. 1 is a sectional view for explaining one embodiment of the present invention. The semiconductor manufacturing apparatus of the present invention is an apparatus that peels off and removes a protective film used during etching processing, and includes a mounting table for a magazine case 2 containing a plurality of etched semiconductor substrates 1, a transport system 3, and gas introduction. A mechanism comprising a tube 4, a gas discharge tube 5, a cylindrical reaction tube 6 in which an electrode 7 is disposed, and an etching table 8 on which a semiconductor substrate 1 is placed is installed at the front stage. Furthermore, a base body 11 that vacuum-chucks the transport system 9 and the semiconductor substrate 1 and rotates it by a pulse motor 10, a lower lid 13 having a drain port 12, and a protective film attached to the semiconductor substrate 1 are dissolved. A mechanism equipped with an upper lid 15 in which a nozzle 14 for dripping or spraying a solvent is installed in series with the preceding processing mechanism.
次に本発明装置の動作を順を追って説明すると、エツチ
ング処理加工済の半導体基板１をマガジンケース２より
取り出して該基板１を搬送系３により反応管６内部に搬
入してエツチング処理台８上へと載せ、高真空源に連結
するガス排出管５より反応管６内部を真空状態にし、ガ
ス供給源に連結するガス排出管４より半導体基板１の表
面に付された保護膜の表面を剥離除去するガス（たとえ
ば感光性樹脂膜であるならば酸素）を導入し、高周波発
振器に接続された電極７より高周波電界を印加させてプ
ラズマを発生させ、パターン加工時のエツチング処理時
に変質した保！！！Ｉ膜の表面層を除去する。表面層除
去後、半導体基板１は再び搬送系９を介して基体１１へ
と導き、半導体基板１を基体１１に真空吸着して固定し
た後、保護膜を溶解させる溶剤（感光性樹脂であるなら
ばメチルエチルケトン等）をノズル１４より滴下あるい
は噴霧すると同時に半導体基板１を回転運動させ半導体
基板１上に付された保護膜を完全に除去する。剥離除去
の完了した半導体基板１は搬送系１６を介してマガジン
ケース１７へと収納される。半導体基板１上に付された
保護膜はパターン加工時のエツチング処理時に保護膜表
面層のみ変質して硬化し溶剤のみでは除去不能となるが
、保護膜の表面部のみをプラズマ処理により除去した後
の下層膜は容易に溶剤による除去が可能である。本発明
はこの性質を利用したドライ方式と溶剤処理方式を一体
化させて保護膜を完全に除去するものである。Next, the operation of the apparatus of the present invention will be explained step by step. The semiconductor substrate 1 that has undergone etching processing is taken out from the magazine case 2, the substrate 1 is carried into the reaction tube 6 by the transport system 3, and placed on the etching processing table 8. The inside of the reaction tube 6 is brought into a vacuum state through the gas exhaust pipe 5 connected to a high vacuum source, and the surface of the protective film applied to the surface of the semiconductor substrate 1 is peeled off through the gas exhaust pipe 4 connected to the gas supply source. A gas to be removed (for example, oxygen in the case of a photosensitive resin film) is introduced, and a high frequency electric field is applied from the electrode 7 connected to a high frequency oscillator to generate plasma, and removes the film that has changed in quality during the etching process during pattern processing. ! ! Remove the surface layer of the I film. After the surface layer is removed, the semiconductor substrate 1 is again guided to the base body 11 via the transport system 9, and the semiconductor substrate 1 is fixed to the base body 11 by vacuum suction, and then a solvent (if it is a photosensitive resin) for dissolving the protective film is applied. At the same time, the semiconductor substrate 1 is rotated and the protective film formed on the semiconductor substrate 1 is completely removed. The semiconductor substrate 1 that has been completely peeled and removed is stored in the magazine case 17 via the transport system 16. During the etching process during pattern processing, only the surface layer of the protective film applied to the semiconductor substrate 1 changes in quality and hardens, making it impossible to remove with a solvent alone; however, after only the surface portion of the protective film is removed by plasma treatment. The lower layer can be easily removed with a solvent. The present invention utilizes this property to completely remove the protective film by integrating a dry method and a solvent treatment method.
以上説明したように本発明はドライ方式による保護膜の
表面層除去処理と、保護膜下層部の溶剤による除去処理
を行なうことで従来発生していたゴミの再付着の問題、
保護膜の部分的な残りによる汚染の問題を解決すること
ができ、結果的に半導体装置製造における歩留、品質の
向上が期待できる効果を有するものである。As explained above, the present invention removes the surface layer of the protective film using a dry method and removes the lower layer of the protective film using a solvent, thereby solving the problem of re-adhesion of dust that previously occurred.
It is possible to solve the problem of contamination due to the partial remaining of the protective film, and as a result, the yield and quality in semiconductor device manufacturing can be expected to be improved.
第１図は本発明の一実施例を示す断面図である。
１・・・半導体基板 ２，１７・・・マガジン
ケース３．９，１６・・・搬送系 ４・・・ガ
ス導入管５・・・ガス排出管 ６・・・反応管
７・・・電極 ８・・・エツチング処理
台１０・・・パルスモータ−１１・・・基体１２・・・
排液口 １３・・・下蓋１４・・・ノズル
１５・・・上蓋特許出願人 九州日本電
気株式会社
代 理 人 弁理士 菅 野 中 −１
−一゛、−ノ
第１図
１υノＶルスを−夕一FIG. 1 is a sectional view showing one embodiment of the present invention. 1... Semiconductor substrate 2, 17... Magazine case 3. 9, 16... Transport system 4... Gas introduction tube 5... Gas discharge tube 6... Reaction tube 7... Electrode 8 ...Etching table 10...Pulse motor 11...Base 12...
Drain port 13...Lower lid 14...Nozzle 15...Upper lid Patent applicant Kyushu NEC Co., Ltd. Agent Patent attorney Naka Kanno -1
-1゛、-ノ1Fig.1υノVrus-Yuichi
Claims (1)
離除去する装置において、エッチングガスが導入された
真空の反応管内で電極に高周波電界を印加してプラズマ
を発生させ半導体基板上に付された保護膜の表面層を除
去処理する機構と、半導体基板を真空吸着しこれを回転
運動させ該半導体基板表面に保護膜を溶解させる溶剤を
滴下あるいは噴霧して保護膜を除去処理する機構とを有
することを特徴とする半導体製造装置。(1) In a device that peels off and removes a protective film for etching processing from a semiconductor substrate, a high-frequency electric field is applied to an electrode in a vacuum reaction tube into which etching gas is introduced to generate plasma to protect the semiconductor substrate. It has a mechanism for removing the surface layer of the film, and a mechanism for removing the protective film by vacuum suctioning the semiconductor substrate, rotating it, and dropping or spraying a solvent that dissolves the protective film on the surface of the semiconductor substrate. A semiconductor manufacturing device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10832586A JPS62264622A (en) | 1986-05-12 | 1986-05-12 | Apparatus for manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10832586A JPS62264622A (en) | 1986-05-12 | 1986-05-12 | Apparatus for manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62264622A true JPS62264622A (en) | 1987-11-17 |
Family
ID=14481839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10832586A Pending JPS62264622A (en) | 1986-05-12 | 1986-05-12 | Apparatus for manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62264622A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023921A (en) * | 1988-06-21 | 1990-01-09 | Tokyo Electron Ltd | Ashing equipment |
| JPH0272622A (en) * | 1988-09-07 | 1990-03-12 | Teru Kyushu Kk | Ashing device |
| KR100952672B1 (en) * | 2007-12-18 | 2010-04-13 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN114618852A (en) * | 2022-05-17 | 2022-06-14 | 江苏浦贝智能科技有限公司 | Glue removing machine and glue removing method for semiconductor processing |
-
1986
- 1986-05-12 JP JP10832586A patent/JPS62264622A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023921A (en) * | 1988-06-21 | 1990-01-09 | Tokyo Electron Ltd | Ashing equipment |
| JPH0272622A (en) * | 1988-09-07 | 1990-03-12 | Teru Kyushu Kk | Ashing device |
| KR100952672B1 (en) * | 2007-12-18 | 2010-04-13 | 세메스 주식회사 | Apparatus and method for treating substrate |
| CN114618852A (en) * | 2022-05-17 | 2022-06-14 | 江苏浦贝智能科技有限公司 | Glue removing machine and glue removing method for semiconductor processing |
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