JP2001094223A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2001094223A JP2001094223A JP26619399A JP26619399A JP2001094223A JP 2001094223 A JP2001094223 A JP 2001094223A JP 26619399 A JP26619399 A JP 26619399A JP 26619399 A JP26619399 A JP 26619399A JP 2001094223 A JP2001094223 A JP 2001094223A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit board
- copper
- ceramic substrate
- metal circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、セラミック基板の
両面に金属回路板を取着したセラミック回路基板に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board having metal circuit boards attached to both sides of a ceramic substrate.
【0002】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に被着させたメタライズ金属層に銀−銅合金等
のロウ材を介して銅等から成る金属回路板を接合させた
セラミック回路基板、セラミック基板上に銀−銅共晶合
金にチタン、ジルコニウム、ハフニウムあるいはその水
素化物を添加した活性金属ロウ材を介して銅等から成る
金属回路板を直接接合させたセラミック回路基板、ある
いはセラミック基板上に銅板を載置させた後加熱し直接
セラミック基板と銅板とを接合させた所謂、DBC(D
irect Bond Copper)法によって作製
されたセラミック回路基板が用いられている。2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a metallized metal layer adhered on a ceramic substrate is formed of a metal made of copper or the like via a brazing material such as a silver-copper alloy. A ceramic circuit board with circuit boards joined together, and a metal circuit board made of copper etc. directly joined on the ceramic substrate via an active metal brazing material obtained by adding titanium, zirconium, hafnium or its hydride to a silver-copper eutectic alloy A so-called DBC (D) in which a copper plate is placed on a ceramic circuit board or a ceramic substrate that has been heated and then directly bonded to the ceramic substrate and the copper plate.
A ceramic circuit board manufactured by an direct bond copper method is used.
【0003】また、これら各セラミック回路基板は金属
回路板の実装密度を高めるためにセラミック基板の上下
両面に金属回路板を接合させておき、これら上下両面の
金属回路板間をセラミック基板に設けた貫通孔内に充填
されているロウ材で電気的に接続することが行われてい
る。In order to increase the mounting density of the metal circuit boards, these ceramic circuit boards are bonded to the upper and lower surfaces of the ceramic substrate, and the upper and lower surfaces of the metal circuit boards are provided on the ceramic substrate. An electrical connection is made with a brazing filler material filled in the through hole.
【0004】なお、前記セラミック回路基板、例えば、
セラミック基板上に被着させたメタライズ金属層にロウ
材を介して銅等から成る金属回路板を接合させたセラミ
ック回路基板は、一般に酸化アルミニウム質焼結体、窒
化アルミニウム質焼結体、窒化珪素質焼結体、ムライト
質焼結体等の電気絶縁性のセラミックス材料から成り、
上下両面に所定パターンのメタライズ金属層を有し、か
つ厚み方向に貫通する貫通孔を設けたセラミック基板を
準備し、次に前記セラミック基板の貫通孔内に、銀ロウ
粉末(銀と銅の合金粉末)に有機溶剤、溶媒を添加混合
して得たロウ材ペーストを充填するとともにメタライズ
金属層上に間に銀ロウ等のロウ材を挟んで所定パターン
の金属回路板を載置当接させ、しかる後、これを還元雰
囲気中、約900℃の温度に加熱し、ロウ材ペースト及
びロウ材を溶融させ、メタライズ金属層と金属回路板及
びセラミック基板の上下両面の金属回路板おのおのの銀
ロウ等のロウ材を介して接合することによって製作され
る。[0004] The ceramic circuit board, for example,
A ceramic circuit board in which a metal circuit board made of copper or the like is joined to a metallized metal layer adhered on a ceramic substrate via a brazing material is generally made of an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon nitride. Made of an electrically insulating ceramic material such as a porous sintered body, a mullite sintered body, etc.
A ceramic substrate having a predetermined pattern of metallized metal layers on both upper and lower surfaces and having a through hole penetrating in the thickness direction is prepared. Then, silver brazing powder (an alloy of silver and copper) is provided in the through hole of the ceramic substrate. Powder) with an organic solvent, a brazing material paste obtained by adding and mixing the solvent, and a metal circuit board having a predetermined pattern is placed and brought into contact with the metallized metal layer with a brazing material such as silver brazing interposed therebetween. Thereafter, this is heated in a reducing atmosphere to a temperature of about 900 ° C. to melt the brazing material paste and the brazing material, and to form a metallized metal layer, a metal circuit board, and a silver brazing material on each of the upper and lower metal circuit boards of the ceramic substrate. It is manufactured by joining through the brazing material.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、セラミック基板の
上下両面に接合されている金属回路板同士がセラミック
基板に設けた貫通孔内に充填されているロウ材を介して
電気的に接続されており、該セラミック基板に設けた貫
通孔内へのロウ材の充填はセラミック基板の貫通孔内に
銀ロウ粉末(銀と銅の合金粉末)に有機溶剤、溶媒を添
加混合して得たロウ材ペーストを充填させた後、約90
0℃の温度に加熱することによって行われ、この場合、
各銀ロウ粉末間に存在する空気が溶融した銀ロウ材中に
多量に抱き込まれて多孔質となり、導通抵抗が比抵抗で
7〜10μΩcmと高いものであった。そのため従来の
セラミック回路基板では金属回路板及び貫通孔内のロウ
材に10Aを超える大電流が流れると貫通孔内に充填さ
れたロウ材部分が抵抗発熱し、その熱が金属回路板上に
半田等の接着材を介して接着固定される半導体素子等の
電子部品に作用し、電子部品を高温として安定に作動さ
せることができないという欠点を有していた。However, in this conventional ceramic circuit board, the metal circuit boards joined to the upper and lower surfaces of the ceramic board are filled with a brazing material filled in a through hole formed in the ceramic board. The through hole provided in the ceramic substrate is filled with a brazing filler metal by adding an organic solvent and a solvent to the silver brazing powder (alloy powder of silver and copper) in the through hole of the ceramic substrate. After adding and mixing the brazing material paste obtained by adding
This is done by heating to a temperature of 0 ° C., where
Air existing between the respective silver brazing powders was entrapped in a large amount in the molten silver brazing material and became porous, and the conduction resistance was as high as 7 to 10 μΩcm in specific resistance. Therefore, in a conventional ceramic circuit board, when a large current exceeding 10 A flows through the metal circuit board and the brazing material in the through hole, the brazing material portion filled in the through hole generates resistance heat, and the heat is soldered onto the metal circuit board. It acts on an electronic component such as a semiconductor element which is bonded and fixed via an adhesive material such as the above, and has a drawback that the electronic component cannot be stably operated at a high temperature.
【0006】本発明は上記欠点に鑑み案出されたもの
で、その目的は抵抗発熱による多量の熱の発生を有効に
防止し、金属回路板に接続される半導体素子等の電子部
品を常に適温として正常、かつ安定に作動させることが
できるセラミック回路基板を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to effectively prevent the generation of a large amount of heat due to resistance heating and to keep electronic components such as semiconductor elements connected to a metal circuit board at an appropriate temperature. It is another object of the present invention to provide a ceramic circuit board that can operate normally and stably.
【0007】[0007]
【課題を解決するための手段】本発明のセラミック回路
基板は、貫通孔を有するセラミック基板の両面に前記貫
通孔を塞ぐように金属回路板を取着させるとともに貫通
孔内に銅の含有量が20重量%乃至35重量%である銅
−タングステンから成る金属柱を配置させ、該金属柱で
セラミック基板両面の金属回路板を接続したことを特徴
とするものである。According to the ceramic circuit board of the present invention, a metal circuit board is attached to both sides of a ceramic substrate having a through hole so as to cover the through hole, and the content of copper in the through hole is reduced. A metal column made of copper-tungsten of 20% by weight to 35% by weight is arranged, and the metal column connects metal circuit boards on both sides of the ceramic substrate.
【0008】本発明のセラミック回路基板によれば、セ
ラミック基板の両面に取着されている金属回路板をセラ
ミック基板の貫通孔内に配置されている気孔がほとんど
なく、比抵抗が4μΩcm以下である銅の含有量が20
重量%乃至35重量%の銅−タングステンから成る金属
柱を介して電気的に接続したことから金属回路板及び金
属柱に10Aを超える大電流が流れたとしても金属柱で
抵抗発熱が起こり、多量の熱を発生することは無く、そ
の結果、金属回路板上に半田等の接着材を用いて接着固
定される半導体素子等の電子部品は常に適温となり、長
期間にわたって正常、かつ安定に作動させることが可能
となる。According to the ceramic circuit board of the present invention, the metal circuit boards attached to both sides of the ceramic board have few pores arranged in the through holes of the ceramic board, and the specific resistance is 4 μΩcm or less. Copper content of 20
Since the electrical connection is made through a metal column made of copper-tungsten of 35% by weight to 35% by weight, even if a large current exceeding 10A flows through the metal circuit board and the metal column, resistance heating occurs in the metal column, and a large amount of heat is generated. As a result, electronic components such as semiconductor elements bonded and fixed on a metal circuit board using an adhesive such as solder are always at an appropriate temperature, and operate normally and stably for a long period of time. It becomes possible.
【0009】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
は銅の含有量が20重量%乃至35重量%の銅−タング
ステンから成り、熱膨張係数が7〜10ppm/℃で、
セラミック基板の熱膨張係数に近似することからセラミ
ック基板と金属柱の両者に熱が作用しても両者間に熱膨
張係数の相違に起因する応力が発生することはなく該応
力によってセラミック基板にクラックや割れ等を生じる
こともない。Further, according to the ceramic circuit board of the present invention, the metal pillar disposed in the through hole of the ceramic board is made of copper-tungsten having a copper content of 20 to 35% by weight, and has a thermal expansion. When the coefficient is 7 to 10 ppm / ° C,
Since the coefficient of thermal expansion approximates the coefficient of thermal expansion of the ceramic substrate, even if heat acts on both the ceramic substrate and the metal columns, no stress due to the difference in the coefficient of thermal expansion occurs between the two, and the stress causes cracks in the ceramic substrate. There is no occurrence of cracks or the like.
【0010】[0010]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1は、本発明のセラミック回路基板
の一実施例を示し、1はセラミック基板、2はメタライ
ズ金属層、3は金属回路板である。Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic board, 2 is a metallized metal layer, and 3 is a metal circuit board.
【0011】前記セラミック基板1は四角形状をなし、
一部に厚み方向に貫通する貫通孔4が形成されており、
該貫通孔4内には金属柱5が挿着されている。The ceramic substrate 1 has a square shape,
Through holes 4 penetrating in the thickness direction are partially formed,
A metal column 5 is inserted into the through hole 4.
【0012】また前記セラミック基板1はその上下両面
にメタライズ金属層2が被着されており、該メタライズ
金属層2には金属回路板3がロウ付けされている。The ceramic substrate 1 has metallized metal layers 2 attached to the upper and lower surfaces thereof, and a metal circuit board 3 is brazed to the metallized metal layers 2.
【0013】前記セラミック基板1は酸化アルミニウム
質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化
アルミニウム質焼結体、窒化珪素質燒結体等の電気絶縁
材料から成り、例えば、酸化アルミニウム質焼結体から
成る場合には、酸化アルミニウム、酸化珪素、酸化マグ
ネシウム、酸化カルシウム等の原料粉末に適当な有機バ
インダー、可塑剤、溶剤を添加混合して泥漿状となすと
ともに該泥漿物を従来周知のドクターブレード法やカレ
ンダーロール法を採用することによってセラミックグリ
ーンシート(セラミック生シート)を形成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施し、貫通孔4となる孔を有する所定形状に形成す
るとともに高温(約1600℃)で焼成することによっ
て、あるいは酸化アルミニウム等の原料粉末に適当な有
機溶剤、溶媒を添加混合して原料粉末を調整するととも
に該原料粉末をプレス成形機によって貫通孔4となる孔
を有した所定形状に形成し、しかる後、前記形成体を約
1600℃の温度で焼成することによって製作される。The ceramic substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body. When it is made of an aluminum oxide-based sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed. A ceramic green sheet (green ceramic sheet) is formed by employing a conventionally known doctor blade method or calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process to form a hole serving as a through hole 4. By sintering at a high temperature (about 1600 ° C.) A raw material powder such as minium is mixed with a suitable organic solvent and a solvent to prepare the raw material powder, and the raw material powder is formed into a predetermined shape having a hole to be a through hole 4 by a press molding machine. It is made by firing the compact at a temperature of about 1600 ° C.
【0014】前記セラミック基板1は金属回路板3を支
持する支持部材として作用し、その上下両面及び貫通孔
4内壁面にメタライズ金属層2が所定パターンに被着形
成されており、該セラミック基板1の上下両面に被着さ
れているメタライズ金属層2には所定パターンの金属回
路板3がロウ付けされている。The ceramic substrate 1 functions as a support member for supporting the metal circuit board 3, and a metallized metal layer 2 is formed in a predetermined pattern on both upper and lower surfaces and on the inner wall surface of the through hole 4. A metal circuit board 3 having a predetermined pattern is brazed to a metallized metal layer 2 attached to both upper and lower surfaces of the metallized metal layer.
【0015】前記メタライズ金属層2は金属回路板3を
セラミック基板1にロウ付けする際の下地金属層として
作用し、タングステン、モリブデン、マンガン等の高融
点金属材料より成り、例えば、タングステン粉末に適当
な有機バインダー、可塑材、溶剤を添加混合して得た金
属ペーストを焼成によってセラミック基板1となるセラ
ミックグリーンシート(セラミック生シート)の表面に
予め従来周知のスクリーン印刷法により所定パターンに
印刷塗布しておくことによってセラミック基板1の上面
に所定パターン、所定厚み(10〜50μm)に被着さ
れる。The metallized metal layer 2 acts as a base metal layer when the metal circuit board 3 is brazed to the ceramic substrate 1, and is made of a high melting point metal material such as tungsten, molybdenum, manganese, etc. A metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent is preliminarily printed and applied in a predetermined pattern on a surface of a ceramic green sheet (ceramic green sheet) to be a ceramic substrate 1 by firing using a well-known screen printing method. By doing so, a predetermined pattern and a predetermined thickness (10 to 50 μm) are adhered on the upper surface of the ceramic substrate 1.
【0016】なお、前記メタライズ金属層2はその表面
にニッケル、金等の良導電性で、耐蝕性及びロウ材との
濡れ性が良好な金属をメッキ法により1μm〜20μm
の厚みに被着させておくと、メタライズ金属層2の酸化
腐食を有効に防止することができるとともにメタライズ
金属層2と金属回路板3とのロウ付けを極めて強固にな
すことができる。従って、前記メタライズ金属層2の酸
化腐食を有効に防止し、メタライズ金属層2と金属回路
板3とのロウ付けを強固となすにはメタライズ金属層2
の表面にニッケル、金等の良導電性で、耐蝕性及びロウ
材との濡れ性が良好な金属を1μm〜20μmの厚みに
被着させておくことが好ましい。The metallized metal layer 2 is made of a metal having good conductivity, such as nickel or gold, having good corrosion resistance and good wettability with a brazing material on the surface of the metallized metal layer 2 by a plating method of 1 μm to 20 μm.
When the metallized metal layer 2 is adhered, the metallized metal layer 2 can be effectively prevented from being oxidized and corroded, and the metallized metal layer 2 and the metal circuit board 3 can be extremely firmly brazed. Accordingly, in order to effectively prevent the metallized metal layer 2 from being oxidized and corroded, and to firmly braze the metallized metal layer 2 and the metal circuit board 3, the metallized metal layer 2 is required.
It is preferable that a metal having good conductivity, such as nickel and gold, having good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal to a thickness of 1 μm to 20 μm.
【0017】前記セラミック基板1の上下両面に被着さ
れているメタライズ金属層2には金属回路板3がセラミ
ック基板1に設けた貫通孔4を塞ぐようにしてロウ材を
介して取着されている。A metal circuit board 3 is attached to a metallized metal layer 2 attached to both upper and lower surfaces of the ceramic substrate 1 via a brazing material so as to cover a through hole 4 provided in the ceramic substrate 1. I have.
【0018】前記金属回路板3は銅やアルミニウム等の
金属材料から成り、セラミック基板1の上下両面に被着
形成されているメタライズ金属層2上に銀ロウ等のロウ
材を介して取着される。The metal circuit board 3 is made of a metal material such as copper or aluminum. The metal circuit board 3 is attached to the metallized metal layer 2 formed on the upper and lower surfaces of the ceramic substrate 1 via a brazing material such as silver brazing. You.
【0019】なお、前記銅やアルミニウム等から成る金
属回路板3は、銅やアルミニウム等のインゴット(塊)
に圧延加工法や打ち抜き加工法等、従来周知の金属加工
法を施すことによって、例えば、厚さが500μmで、
金属層4のパターン形状に対応する所定パターン形状に
形成される。The metal circuit board 3 made of copper, aluminum or the like is used as an ingot of copper or aluminum.
By applying a conventionally known metal working method such as a rolling method or a punching method to, for example, a thickness of 500 μm,
It is formed in a predetermined pattern shape corresponding to the pattern shape of the metal layer 4.
【0020】また、前記金属回路板3はこれを無酸素銅
で形成しておくと、該無酸素銅はロウ付けの際に銅の表
面が銅中に存在する酸素により酸化されることなくロウ
材との濡れ性が良好となり、メタライズ金属層2へのロ
ウ材を介しての接合が強固となる。従って、前記金属回
路板3はこれを無酸素銅で形成しておくことが好まし
い。Further, when the metal circuit board 3 is formed of oxygen-free copper, the oxygen-free copper can be brazed without causing the copper surface to be oxidized by oxygen existing in the copper during brazing. The wettability with the material is improved, and the bonding to the metallized metal layer 2 via the brazing material is strengthened. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.
【0021】更に前記金属回路板3はその表面にニッケ
ルから成る、良導電性で、かつ耐蝕性及びロウ材との濡
れ性が良好な金属をメッキ法により被着させておくと、
金属回路板3に酸化腐食が発生するのを有効に防止する
ことができるとともに金属回路板3と外部電気回路との
電気的接続及び金属回路板3への半導体素子等の電子部
品の接続を強固となすことができる。従って、前記金属
回路板3はその表面にニッケル等から成る、良導電性
で、かつ耐蝕性及びロウ材との濡れ性が良好な金属をメ
ッキ法により被着させておくことが好ましい。Further, when the metal circuit board 3 is coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material by a plating method,
Oxidation corrosion of the metal circuit board 3 can be effectively prevented, and the electrical connection between the metal circuit board 3 and an external electric circuit and the connection of electronic components such as semiconductor elements to the metal circuit board 3 are firmly strengthened. Can be made. Therefore, it is preferable that a metal made of nickel or the like and having good conductivity, good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal circuit board 3 by plating.
【0022】また更に、前記セラミック基板1に被着さ
れたメタライズ金属層2への金属回路板3のロウ付け
は、メタライズ金属層2上に金属回路板3を、間に、例
えば、銀ロウ材(銀:72重量%、銅:28重量%)や
アルミニウムロウ材(アルミニウム:88重量%、シリ
コン:12重量%)等から成るロウ材を挟んで載置さ
せ、しかる後、金属回路板3に30〜100g/cm2
の荷重を加えた状態で真空中もしくは中性、還元雰囲気
中、所定温度(銀ロウ材の場合は約900℃、アルミニ
ウムロウ材の場合は約600℃)に加熱処理し、ロウ材
を溶融せしめ、該溶融したロウ材でメタライズ金属層2
と金属回路板3とを接合させることによって行われる。Further, the brazing of the metal circuit board 3 to the metallized metal layer 2 attached to the ceramic substrate 1 is performed by interposing the metal circuit board 3 on the metallized metal layer 2 with, for example, a silver brazing material. (Silver: 72% by weight, copper: 28% by weight), aluminum brazing material (aluminum: 88% by weight, silicon: 12% by weight), and the like. 30-100 g / cm 2
In a vacuum or in a neutral or reducing atmosphere, heat is applied to a predetermined temperature (approximately 900 ° C for silver brazing material, approximately 600 ° C for aluminum brazing material) with the load applied to melt the brazing material. Metallized metal layer 2 with the molten brazing material
And the metal circuit board 3.
【0023】前記金属回路板3がロウ付けされたセラミ
ック基板1はまた貫通孔4の内部に銅−タングステンか
ら成る金属柱5が配置されており、該銅−タングステン
から成る金属柱5はセラミック基板1の上下両面のロウ
付けされている金属回路板3間を電気的に接続する作用
をなす。On the ceramic substrate 1 to which the metal circuit board 3 is brazed, metal pillars 5 made of copper-tungsten are arranged inside the through holes 4. 1 serves to electrically connect the brazed metal circuit boards 3 on the upper and lower surfaces.
【0024】前記銅−タングステンから成る金属柱5は
銅の含有量を20重量%〜35重量%の範囲とした銅−
タングステンにより形成されており、該金属柱5の比抵
抗が4μΩcm以下と小さい、即ち、金属柱5の導通抵
抗が小さいことから金属回路板3及び金属柱5に10A
を超える大電流が流れたとしても金属回路板3及び金属
柱5より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板3上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【0025】また、前記銅の含有量を20重量%〜35
重量%の範囲とした銅−タングステンから成る金属柱5
は熱膨張係数が7〜10ppm/℃であり、セラミック
基板1の熱膨張係数に近似することからセラミック基板
1と金属柱5の両者に熱が作用したとしても両者間には
熱膨張係数の相違に起因する大きな応力が発生すること
はなく、該応力によってセラミック基板1にクラックや
割れが発生することはない。Further, the content of copper is set to 20% by weight to 35% by weight.
Metal pillars 5 of copper-tungsten in the range of weight%
Has a coefficient of thermal expansion of 7 to 10 ppm / ° C. and is close to the coefficient of thermal expansion of the ceramic substrate 1. Therefore, even if heat is applied to both the ceramic substrate 1 and the metal columns 5, the difference in the coefficient of thermal expansion between the two. Does not cause a large stress, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【0026】なお、前記銅−タングステンから成る金属
柱5は銅の含有量が20重量%未満となると比抵抗が4
μΩcmを超えて導通抵抗が極めて大きなものとなって
しまい、10Aを超える大電流が流れた場合、大量の熱
を発生してしまう。また銅の含有量が35重量%を超え
ると金属柱5の熱膨張係数が10ppm/℃を超えてセ
ラミック基板1の熱膨張係数に対し大きく相違したもの
となってしまい、セラミック基板1と金属柱5の両者に
熱が作用した時、両者間に熱膨張係数の相違に起因する
応力によってセラミック基板1にクラックや割れ等が発
生してしまう。The metal column 5 made of copper-tungsten has a specific resistance of 4 when the copper content is less than 20% by weight.
The conduction resistance becomes extremely large exceeding μΩcm, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two.
【0027】従って、前記銅−タングステンから成る金
属柱5は銅の含有量が20重量%〜35重量%の範囲に
特定される。Accordingly, the metal column 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【0028】前記銅−タングステンから成る金属柱5
は、例えば、タングステン粉体を所定温度にて焼結させ
たタングステン焼結体に溶融銅を含浸させることによっ
て製作され、セラミック基板1に設けられた貫通孔4内
に、両端をセラミック基板1の上下両面に取着されてい
る金属回路板3に接触するように配置させるとともに貫
通孔4内壁に被着されているメタライズ金属層2に銀ロ
ウ等のロウ材を介しロウ付けすることによってセラミッ
ク基板1の貫通孔4内に両端がセラミック基板1の上下
両面に取着されている金属回路板3に接触した状態で配
置される。The metal column 5 made of copper-tungsten
Is manufactured, for example, by impregnating molten copper into a tungsten sintered body obtained by sintering a tungsten powder at a predetermined temperature, and having both ends of the ceramic substrate 1 in a through hole 4 provided in the ceramic substrate 1. The ceramic substrate is arranged so as to be in contact with the metal circuit boards 3 attached to the upper and lower surfaces and to the metallized metal layer 2 attached to the inner wall of the through hole 4 via a brazing material such as silver brazing. The two ends of the ceramic substrate 1 are arranged in the through hole 4 in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【0029】また前記銅−タングステンから成る金属柱
5はその径が200μm未満となると金属柱5の導通抵
抗が大きくなって10Aを超える大電流が流れた場合、
抵抗発熱により多量の熱が発生してしまう危険性があ
る。従って、前記金属柱5はその径を200μm以上、
好適には350μm以上としておくことがよい。特に金
属柱5の径を350μm以上としておくと金属柱5に2
0Aを超える大電流が流れても抵抗発熱による多量の熱
を発生することはなく、これによって金属回路板3上に
半田等の接着材を用いて接着固定される半導体素子等の
電子部品を常に適温となすことができ、電子部品を長期
間にわたって正常、かつ安定に作動させることが可能と
なる。When the diameter of the metal column 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal column 5 becomes large and a large current exceeding 10 A flows.
There is a risk that a large amount of heat will be generated due to resistance heating. Therefore, the metal column 5 has a diameter of 200 μm or more,
Preferably, the thickness is 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more,
Even if a large current exceeding 0 A flows, a large amount of heat is not generated due to resistance heating, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 by using an adhesive such as solder is always provided. The temperature can be set to an appropriate temperature, and the electronic component can operate normally and stably for a long period of time.
【0030】かくして、上述のセラミック回路基板によ
れば、セラミック基板1の上面に取着された金属回路板
3に半田等の接着材を介して半導体素子等の電子部品を
接着固定させるとともに半導体素子等の電子部品の各電
極をボンディングワイヤ等の電気的接続手段を介して金
属回路板3に電気的に接続させれば半導体素子等の電子
部品はセラミック回路基板に実装され、同時に金属回路
板3を外部電気回路に電気的に接続させれば半導体素子
等の電子部品は外部電気回路に接続されることとなる。Thus, according to the above-described ceramic circuit board, electronic components such as semiconductor elements are bonded and fixed to the metal circuit board 3 attached to the upper surface of the ceramic substrate 1 via an adhesive such as solder. When the electrodes of the electronic components such as the electronic components are electrically connected to the metal circuit board 3 through electrical connection means such as bonding wires, the electronic components such as the semiconductor elements are mounted on the ceramic circuit board, and Is electrically connected to an external electric circuit, electronic components such as semiconductor elements are connected to the external electric circuit.
【0031】次に本発明の他の実施例を図2及び図3に
基づいて説明する。なお、図中、図1と同一箇所につい
ては同一符号が付してある。図2のセラミック回路基板
は、セラミック基板1の上下両面に所定パターンの金属
回路板3が活性金属ロウ材6を介して取着されており、
同時にセラミック基板1に設けた厚み方向に貫通する貫
通孔4内に銅−タングステンから成る金属柱5がその外
表面を活性金属ロウ材6を介して貫通孔4内壁に取着す
ることによって配置されている。Next, another embodiment of the present invention will be described with reference to FIGS. In the figure, the same parts as those in FIG. 1 are denoted by the same reference numerals. The ceramic circuit board of FIG. 2 has a metal circuit board 3 of a predetermined pattern attached to both upper and lower surfaces of a ceramic board 1 via an active metal brazing material 6.
At the same time, a metal pillar 5 made of copper-tungsten is arranged in a through hole 4 penetrating in the thickness direction provided in the ceramic substrate 1 by attaching an outer surface thereof to an inner wall of the through hole 4 via an active metal brazing material 6. ing.
【0032】前記セラミック基板1に設けた貫通孔4内
に配置されている銅−タングステンから成る金属柱5は
その両端が金属回路板3に接触しており、これによって
セラミック基板1の上下両面に取着されている金属回路
板3は金属柱5を介して電気的に接続されることとな
る。The metal pillars 5 made of copper-tungsten disposed in the through holes 4 provided in the ceramic substrate 1 have both ends in contact with the metal circuit board 3, and are thereby provided on both upper and lower surfaces of the ceramic substrate 1. The attached metal circuit board 3 is electrically connected via the metal pillar 5.
【0033】前記貫通孔4を有するセラミック基板1は
上述の実施例と同様の材料からなり、同様の方法によっ
て所定形状に作成されている。The ceramic substrate 1 having the through holes 4 is made of the same material as that of the above-described embodiment, and is formed in a predetermined shape by a similar method.
【0034】また前記セラミック基板1はその上下両面
でセラミック基板1に設けた貫通孔4を塞ぐように金属
回路板3が活性金属ロウ材6を介して取着されており、
該金属回路板3は銅やアルミニウム等の金属材料から成
り、銅やアルミニウム等のインゴット(塊)に圧延加工
法や打ち抜き加工法等、従来周知の金属加工法を施すこ
とによって、例えば、500μmの厚みで、所定パター
ンに形成される。Further, a metal circuit board 3 is attached via an active metal brazing material 6 so as to cover through holes 4 formed in the ceramic substrate 1 on both upper and lower surfaces of the ceramic substrate 1.
The metal circuit board 3 is made of a metal material such as copper or aluminum, and is subjected to a well-known metal processing method such as a rolling method or a punching method on an ingot (lumps) of copper or aluminum, for example, to a thickness of 500 μm. It is formed in a predetermined pattern with a thickness.
【0035】なお、前記金属回路板3はこれを無酸素銅
で形成しておくと、該無酸素銅は活性金属ロウ材6を介
して取着する際、銅の表面が銅中に存在する酸素により
酸化されることなく活性金属ロウ材6との濡れ性が良好
となり、金属回路板3のセラミック基板1への活性金属
ロウ材6を介しての取着接合が強固となる。従って、前
記金属回路板3はこれを無酸素銅で形成しておくことが
好ましい。If the metal circuit board 3 is formed of oxygen-free copper, the surface of copper is present in the copper when the oxygen-free copper is attached via the active metal brazing material 6. The wettability with the active metal brazing material 6 is improved without being oxidized by oxygen, and the attachment joining of the metal circuit board 3 to the ceramic substrate 1 via the active metal brazing material 6 becomes strong. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.
【0036】また前記セラミック基板1は貫通孔4内部
に銅−タングステンから成る金属柱5が配置されてお
り、該金属柱5はセラミック基板1の上下両面のロウ付
けされている金属回路板3間を電気的に接続する作用を
なす。In the ceramic substrate 1, metal pillars 5 made of copper-tungsten are arranged inside the through holes 4, and the metal pillars 5 are provided between the metal circuit boards 3 on the upper and lower surfaces of the ceramic substrate 1 by brazing. Function to electrically connect.
【0037】前記銅−タングステンから成る金属柱5は
銅の含有量を20重量%〜35重量%の範囲とした銅−
タングステンにより形成されており、該金属柱5の比抵
抗が4μΩcm以下と小さい、即ち、金属柱5の導通抵
抗が小さいことから金属回路板3及び金属柱5に10A
を超える大電流が流れたとしても金属回路板3及び金属
柱5より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板3上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【0038】また、前記銅の含有量を20重量%〜35
重量%の範囲とした銅−タングステンから成る金属柱5
は熱膨張係数が7〜10ppm/℃であり、セラミック
基板1の熱膨張係数に近似することからセラミック基板
1と金属柱5の両者に熱が作用したとしても両者間には
熱膨張係数の相違に起因する大きな応力が発生すること
はなく、該応力によってセラミック基板1にクラックや
割れが発生することはない。Further, the content of copper is set to 20% by weight to 35% by weight.
Metal pillars 5 of copper-tungsten in the range of weight%
Has a coefficient of thermal expansion of 7 to 10 ppm / ° C. and is close to the coefficient of thermal expansion of the ceramic substrate 1. Therefore, even if heat is applied to both the ceramic substrate 1 and the metal columns 5, the difference in the coefficient of thermal expansion between the two. Does not cause a large stress, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【0039】なお、前記銅−タングステンから成る金属
柱5は銅の含有量が20重量%未満となると比抵抗が4
μΩcmを超えて導通抵抗が極めて大きなものとなって
しまい、10Aを超える大電流が流れた場合、大量の熱
を発生してしまう。また銅の含有量が35重量%を超え
ると金属柱5の熱膨張係数が10ppm/℃を超えてセ
ラミック基板1の熱膨張係数に対し大きく相違したもの
となってしまい、セラミック基板1と金属柱5の両者に
熱が作用した時、両者間に熱膨張係数の相違に起因する
応力によってセラミック基板1にクラックや割れ等が発
生してしまう。The metal column 5 made of copper-tungsten has a specific resistance of 4 when the copper content is less than 20% by weight.
The conduction resistance becomes extremely large exceeding μΩcm, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two.
【0040】従って、前記銅−タングステンから成る金
属柱5は銅の含有量が20重量%〜35重量%の範囲に
特定される。Accordingly, the metal pillar 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【0041】前記銅−タングステンから成る金属柱5
は、例えば、タングステン粉体を所定温度にて焼結させ
たタングステン焼結体に溶融銅を含浸させることによっ
て製作され、セラミック基板1に設けられた貫通孔4内
に、両端をセラミック基板1の上下両面に取着されてい
る金属回路板3に接触するように配置させるとともに貫
通孔4内壁に被着されているメタライズ金属層2に銀ロ
ウ等のロウ材を介しロウ付けすることによってセラミッ
ク基板1の貫通孔4内に両端がセラミック基板1の上下
両面に取着されている金属回路板3に接触した状態で配
置される。The metal column 5 made of copper-tungsten
Is manufactured, for example, by impregnating molten copper into a tungsten sintered body obtained by sintering a tungsten powder at a predetermined temperature, and having both ends of the ceramic substrate 1 in a through hole 4 provided in the ceramic substrate 1. The ceramic substrate is arranged so as to be in contact with the metal circuit boards 3 attached to the upper and lower surfaces and to the metallized metal layer 2 attached to the inner wall of the through hole 4 via a brazing material such as silver brazing. The two ends of the ceramic substrate 1 are arranged in the through hole 4 in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【0042】前記銅−タングステンから成る金属柱5は
またその径が200μm未満となると金属柱5の導通抵
抗が大きくなって10Aを超える大電流が流れた場合、
抵抗発熱により多量の熱が発生してしまう危険性があ
る。従って、前記金属柱5はその径を200μm以上、
好適には350μm以上としておくことがよい。特に金
属柱5の径を350μm以上としておくと金属柱5に2
0Aを超える大電流が流れても抵抗発熱による多量の熱
を発生することはなく、これによって金属回路板3上に
半田等の接着材を用いて接着固定される半導体素子等の
電子部品を常に適温となすことができ、電子部品を長期
間にわたって正常、かつ安定に作動させることが可能と
なる。When the diameter of the metal pillar 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal pillar 5 becomes large and a large current exceeding 10 A flows.
There is a risk that a large amount of heat will be generated due to resistance heating. Therefore, the metal column 5 has a diameter of 200 μm or more,
Preferably, the thickness is 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more,
Even if a large current exceeding 0 A flows, a large amount of heat is not generated due to resistance heating, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 by using an adhesive such as solder is always provided. The temperature can be set to an appropriate temperature, and the electronic component can operate normally and stably for a long period of time.
【0043】更に前記金属回路板3及び金属柱5は活性
金属ロウ材を使用することによってメタライズ金属層を
不要としてセラミック基板1の上下両面及び貫通孔4内
にロウ付け取着されており、該活性金属ロウ材6として
は金属回路板3が銅で形成されている場合は銀−銅共晶
合金にチタン、ジルコニウム、ハフニウム等の金属もし
くはその水素化物を2〜5重量%添加させたものが、ま
た金属回路板3がアルミニウムで形成されている場合は
アルミニウム−シリコン共晶合金にチタン、ジルコニウ
ム、ハフニウム等の金属もしくはその水素化物を2〜5
重量%添加させたものが好適に使用される。Further, the metal circuit board 3 and the metal pillars 5 are brazed and attached to both the upper and lower surfaces of the ceramic substrate 1 and the through holes 4 without using a metallized metal layer by using an active metal brazing material. When the metal circuit board 3 is formed of copper, the active metal brazing material 6 is obtained by adding a metal such as titanium, zirconium or hafnium or a hydride thereof to a silver-copper eutectic alloy in an amount of 2 to 5% by weight. When the metal circuit board 3 is formed of aluminum, a metal such as titanium, zirconium, hafnium or a hydride thereof is added to the aluminum-silicon eutectic alloy in an amount of 2 to 5 mm.
What added by weight% is used suitably.
【0044】なお、前記金属回路板3がアルミニウムの
場合、予めセラミック基板1の貫通孔に銅−タングステ
ンから成る金属柱5を銀−銅共晶合金にチタン、ジルコ
ニウム、ハフニウム等の金属もしくはその水素化物を2
〜5重量%添加させた活性金属ロウ材にて取着した後、
金属回路板3をアルミニウム−シリコン共晶合金にチタ
ン、ジルコニウム、ハフニウム等の金属もしくはその水
素化物を2〜5重量%添加させた活性金属ロウ材にてロ
ウ付けされる。When the metal circuit board 3 is made of aluminum, a metal column 5 made of copper-tungsten is previously formed in a through hole of the ceramic substrate 1 with a metal such as titanium, zirconium, hafnium or its hydrogen, in a silver-copper eutectic alloy. 2 monsters
After attaching with the active metal brazing material added with ~ 5% by weight,
The metal circuit board 3 is brazed with an active metal brazing material in which a metal such as titanium, zirconium, hafnium or a hydride thereof is added to an aluminum-silicon eutectic alloy in an amount of 2 to 5% by weight.
【0045】前記活性金属ロウ材6を使用しての金属回
路板3及び金属柱5の貫通孔4を有するセラミック基板
1への取着はまず、例えば、銀−銅共晶合金にチタン、
ジルコニウム、ハフニウム等の金属もしくはその水素化
物を2〜5重量%添加させたものに有機溶剤、溶媒を混
合して活性金属ロウ材ペーストを作成し、次にセラミッ
ク基板1の上下両面及び貫通孔4内壁に前記活性金属ロ
ウ材ペーストを従来周知のスクリーン印刷法を採用する
ことによって所定パターンに印刷塗布し、次に前記セラ
ミック基板1の貫通孔4内に金属柱5を挿入配置させる
とともにセラミック基板1の上下両面に印刷塗布されて
いる活性金属ロウ材ペースト上に金属回路板3を載置さ
せ、しかる後、これを真空中もしくは中性、還元雰囲気
中、所定温度(銅の場合は約900℃、アルミニウムの
場合は約600℃)で加熱処理し、活性金属ロウ材6を
溶融せしめ、該溶融した活性金属ロウ材6でセラミック
基板1と金属回路板3及び金属柱5とを接合させること
によって行われる。Attachment of the metal circuit board 3 and the metal columns 5 to the ceramic substrate 1 having the through holes 4 using the active metal brazing material 6 is performed, for example, by first adding titanium, eutectic alloy to silver-copper eutectic alloy, or the like.
An active metal brazing material paste is prepared by mixing an organic solvent and a solvent with a metal such as zirconium or hafnium or a hydride thereof added in an amount of 2 to 5% by weight. The active metal brazing material paste is applied to the inner wall in a predetermined pattern by employing a conventionally known screen printing method, and then a metal column 5 is inserted into the through hole 4 of the ceramic substrate 1 and the ceramic substrate 1 The metal circuit board 3 is placed on the active metal brazing material paste which is printed and coated on both upper and lower surfaces of the metal circuit board. Thereafter, the metal circuit board 3 is placed in a vacuum or in a neutral or reducing atmosphere at a predetermined temperature (about 900 ° C. for copper). , About 600 ° C. in the case of aluminum) to melt the active metal brazing material 6, and the molten active metal brazing material 6 and the ceramic substrate 1 and the metal circuit are melted. 3 and is carried out by bonding the metal post 5.
【0046】かかるセラミック回路基板は上述の実施例
と同様、銅−タングステンから成る金属柱5の比抵抗が
4μΩcm以下と小さい、即ち、金属柱5の導通抵抗が
小さいことから金属回路板3及び金属柱5に10Aを超
える大電流が流れたとしても金属回路板3及び金属柱5
より抵抗発熱により大量の熱が発生することは無く、そ
の結果、金属回路板3上に半田等の接着材を用いて接着
固定される半導体素子等の電子部品は常に適温となり、
長期間にわたって正常、かつ安定に作動させることが可
能となる。また、かかるセラミック回路基板は上述の実
施例と同様、銅−タングステンから成る金属柱5の熱膨
張係数が7〜10ppm/℃となり、セラミック基板1
の熱膨張係数に近似することからセラミック基板1と金
属柱5との間に両者の熱膨張係数の相違に起因する大き
な応力が発生することはなく、該応力によってセラミッ
ク基板1にクラックや割れが発生することもない。In this ceramic circuit board, the specific resistance of the metal column 5 made of copper-tungsten is as small as 4 μΩcm or less, that is, the metal circuit board 3 and the metal Even if a large current exceeding 10 A flows through the pillar 5, the metal circuit board 3 and the metal pillar 5
A large amount of heat is not generated due to resistance heating, and as a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3 using an adhesive such as solder always have an appropriate temperature,
It is possible to operate normally and stably for a long period of time. Further, in the case of such a ceramic circuit board, the thermal expansion coefficient of the metal column 5 made of copper-tungsten is 7 to 10 ppm / ° C., as in the above-described embodiment.
Since the thermal expansion coefficient of the ceramic substrate 1 is close to that of the ceramic substrate 1, no large stress is generated between the ceramic substrate 1 and the metal column 5 due to the difference in the thermal expansion coefficient between the two. It does not occur.
【0047】更に図3のセラミック回路基板は、セラミ
ック基板1の上下両面に銅から成る所定パターンの金属
回路板3がDBC(Direct Bond Copp
er)法によって取着されており、同時にセラミック基
板1に設けた厚み方向に貫通する貫通孔4内に銅−タン
グステンから成る金属柱5がその両端を金属回路板3に
接触した状態で配置されている。Further, in the ceramic circuit board shown in FIG. 3, a metal circuit board 3 having a predetermined pattern made of copper is formed on both upper and lower surfaces of the ceramic board 1 by a direct bond cop
er) method, and at the same time, a metal pillar 5 made of copper-tungsten is arranged in a through hole 4 provided in the ceramic substrate 1 and penetrating in the thickness direction, with both ends thereof being in contact with the metal circuit board 3. ing.
【0048】前記貫通孔4を有するセラミック基板1は
前述の実施例と同様の材料からなり、同様の方法によっ
て所定形状に作成されている。The ceramic substrate 1 having the through holes 4 is made of the same material as that of the above-described embodiment, and is formed in a predetermined shape by the same method.
【0049】前記セラミック基板1はその上下両面でセ
ラミック基板1に設けた貫通孔4を塞ぐように銅からな
る金属回路板3がDBC法によって取着されており、該
銅からなる金属回路板3は銅のインゴット(塊)に圧延
加工法や打ち抜き加工法等、従来周知の金属加工法を施
すことによって、例えば、500μmの厚みで、所定の
パターンに形成される。The metal substrate 3 made of copper is attached to the ceramic substrate 1 by the DBC method so as to cover the through holes 4 provided in the ceramic substrate 1 on the upper and lower surfaces thereof. Is formed in a predetermined pattern with a thickness of, for example, 500 μm by subjecting a copper ingot (lumps) to a conventionally known metal working method such as a rolling method or a punching method.
【0050】前記金属回路板3のセラミック基板1の上
下両面への取着は、セラミック基板1の上下両面に金属
回路板3をセラミック基板1に設けた貫通孔4を塞ぐよ
うに載置当接させ、次にこれを真空中もしくは中性、還
元雰囲気中、所定温度(1065〜1083℃)で加熱
処理し、セラミック基板1の上面と金属回路板3の下面
との間に銅−酸化銅共晶を形成することによってセラミ
ック基板1の表面に取着される。The metal circuit board 3 is attached to the upper and lower surfaces of the ceramic substrate 1 by placing and contacting the metal circuit board 3 on the upper and lower surfaces of the ceramic substrate 1 so as to cover the through holes 4 formed in the ceramic substrate 1. Then, this is heat-treated at a predetermined temperature (1065 to 1083 ° C.) in a vacuum or in a neutral or reducing atmosphere, and a copper-copper oxide is placed between the upper surface of the ceramic substrate 1 and the lower surface of the metal circuit board 3. Crystals are attached to the surface of ceramic substrate 1 by forming crystals.
【0051】なお、前記銅からなる金属回路板3はその
表面に予め0.02〜0.5μmの酸化膜を形成してお
く、あるいは酸素含有量を100〜2000ppmとし
ておくとセラミック基板1と金属回路板3とを接合する
際、銅−酸化銅の共晶形成が容易となってセラミック基
板1に金属回路板3を極めて強固に取着接合させること
ができる。従って、前記銅から成る金属回路板3はその
表面に予め0.02〜0.5μmの酸化膜を形成してお
く、あるいは酸素含有量を100〜2000ppmとし
ておくことが好ましい。When the metal circuit board 3 made of copper has an oxide film of 0.02 to 0.5 μm previously formed on its surface or has an oxygen content of 100 to 2000 ppm, the ceramic substrate 1 When joining with the circuit board 3, the eutectic formation of copper-copper oxide is facilitated, and the metal circuit board 3 can be attached and joined to the ceramic substrate 1 very firmly. Therefore, it is preferable that the metal circuit board 3 made of copper has an oxide film of 0.02 to 0.5 μm previously formed on its surface, or has an oxygen content of 100 to 2000 ppm.
【0052】また前記銅から成る金属回路板3はその表
面にニッケルから成る、良導電性で、かつ耐蝕性及びロ
ウ材との濡れ性が良好な金属をメッキ法により被着させ
ておくと、金属回路板3と半導体素子等の電子部品及び
外部電気回路との電気的接続を良好と成すことができ
る。従って、前記銅から成る金属回路板3はその表面に
ニッケルから成る、良導電性で、かつ耐蝕性及びロウ材
との濡れ性が良好な金属をメッキ法により被着させてお
くことが好ましい。When the metal circuit board 3 made of copper is coated with a metal made of nickel and having good conductivity, good corrosion resistance, and good wettability with a brazing material by plating, Good electrical connection between the metal circuit board 3 and electronic components such as semiconductor elements and external electric circuits can be achieved. Therefore, it is preferable that the metal circuit board 3 made of copper is coated with a metal made of nickel and having good conductivity, good corrosion resistance, and good wettability with the brazing material by plating.
【0053】更に前記セラミック基板1は貫通孔4の内
部に銅−タングステンから成る金属柱5が配置されてお
り、該金属柱5はセラミック基板1の上下両面に取着さ
れている金属回路板3間を電気的に接続する作用をな
す。Further, the ceramic substrate 1 has metal pillars 5 made of copper-tungsten disposed inside the through holes 4, and the metal pillars 5 are mounted on the upper and lower surfaces of the ceramic substrate 1. It acts to electrically connect between them.
【0054】前記銅−タングステンから成る金属柱5は
銅の含有量を20重量%〜35重量%の範囲とした銅−
タングステンにより形成されており、該金属柱5の比抵
抗が4μΩcm以下と小さい、即ち、金属柱5の導通抵
抗が小さいことから金属回路板3及び金属柱5に10A
を超える大電流が流れたとしても金属回路板3及び金属
柱5より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板3上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【0055】前記銅の含有量を20重量%〜35重量%
の範囲とした銅−タングステンから成る金属柱5はまた
その熱膨張係数が7〜10ppm/℃であり、セラミッ
ク基板1の熱膨張係数に近似することからセラミック基
板1と金属柱5の両者に熱が作用したとしても両者間に
は熱膨張係数の相違に起因する大きな応力が発生するこ
とはなく、該応力によってセラミック基板1にクラック
や割れが発生することはない。When the content of copper is 20% by weight to 35% by weight,
The metal pillar 5 made of copper-tungsten having a range of 7 to 10 has a thermal expansion coefficient of 7 to 10 ppm / ° C., and is close to the thermal expansion coefficient of the ceramic substrate 1. Does not cause a large stress between the two due to the difference in the coefficient of thermal expansion, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【0056】前記銅−タングステンから成る金属柱5は
銅の含有量が20重量%未満となると比抵抗が4μΩc
mを超えて導通抵抗が極めて大きなものとなってしま
い、10Aを超える大電流が流れた場合、大量の熱を発
生してしまう。また銅の含有量が35重量%を超えると
金属柱5の熱膨張係数が10ppm/℃を超えてセラミ
ック基板1の熱膨張係数に対し大きく相違したものとな
ってしまい、セラミック基板1と金属柱5の両者に熱が
作用した時、両者間に熱膨張係数の相違に起因する応力
によってセラミック基板1にクラックや割れ等が発生し
てしまう。従って、前記銅−タングステンから成る金属
柱5は銅の含有量が20重量%〜35重量%の範囲に特
定される。The metal column 5 made of copper-tungsten has a specific resistance of 4 μΩc when the copper content is less than 20% by weight.
m, the conduction resistance becomes extremely large, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two. Accordingly, the metal column 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【0057】更に前記銅−タングステンから成る金属柱
5は、例えば、タングステン粉体を所定温度にて焼結さ
せたタングステン焼結体に溶融銅を含浸させることによ
って製作され、セラミック基板1に設けられた貫通孔4
内に、両端をセラミック基板1の上下両面に取着されて
いる金属回路板3に接触するように配置させるとともに
貫通孔4内壁に被着されているメタライズ金属層2に銀
ロウ等のロウ材を介しロウ付けすることによってセラミ
ック基板1の貫通孔4内に両端がセラミック基板1の上
下両面に取着されている金属回路板3に接触した状態で
配置される。Further, the metal column 5 made of copper-tungsten is manufactured by impregnating molten copper into a tungsten sintered body obtained by sintering tungsten powder at a predetermined temperature, and provided on the ceramic substrate 1. Through hole 4
In the metallized metal layer 2 attached to the inner wall of the through hole 4, a brazing material such as a silver brazing material is disposed so that both ends thereof are in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1. Are arranged in the through holes 4 of the ceramic substrate 1 with both ends in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【0058】前記銅−タングステンから成る金属柱5は
その径が200μm未満となると金属柱5の導通抵抗が
大きくなって10Aを超える大電流が流れた場合い抵抗
発熱により多量の熱が発生してしまう危険性がある。従
って、前記金属柱5はその径を200μm以上、好適に
は350μm以上としておくこことがよい。特に金属柱
5の径を350μm以上としておくと金属柱5に20A
を超える大電流が流れても抵抗発熱による多量の熱を発
生することはなく、これによって金属回路板3上に半田
等の接着材を用いて接着固定される半導体素子等の電子
部品を常に適温となすことができ、電子部品を長期間い
わたって正常、かつ安定に作動させることが可能とな
る。When the diameter of the metal column 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal column 5 becomes large, and when a large current exceeding 10 A flows, a large amount of heat is generated due to resistance heating. There is a risk that it will. Therefore, it is preferable that the diameter of the metal column 5 is 200 μm or more, preferably 350 μm or more. In particular, when the diameter of the metal pillar 5 is set to 350 μm or more,
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated due to the resistance heat generation, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 using an adhesive such as solder is always kept at an appropriate temperature. The electronic component can be normally and stably operated for a long time.
【0059】なお本発明は上述の実施例に限定されるも
のではなく、本発明の趣旨を逸脱しない範囲であれば種
々の変更は可能である。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
【0060】[0060]
【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板の両面に取着されている金属回路板をセ
ラミック基板の貫通孔内に配置されている気孔がほとん
どなく、比抵抗が4μΩcm以下である銅の含有量が2
0重量%乃至35重量%の銅−タングステンから成る金
属柱を介して電気的に接続したことから金属回路板及び
金属柱に10Aを超える大電流が流れたとしても金属柱
で抵抗発熱が起こり、多量の熱を発生することは無く、
その結果、金属回路板上に半田等の接着材を用いて接着
固定される半導体素子等の電子部品は常に適温となり、
長期間にわたって正常、かつ安定に作動させることが可
能となる。According to the ceramic circuit board of the present invention,
A metal circuit board attached to both sides of a ceramic substrate is provided with almost no pores disposed in the through-holes of the ceramic substrate and having a copper content of 2 μΩcm or less with a copper content of 2 μm or less.
Since the electrical connection is made via a metal pillar made of copper-tungsten of 0 wt% to 35 wt%, even if a large current exceeding 10 A flows through the metal circuit board and the metal pillar, resistance heating occurs in the metal pillar, Does not generate a lot of heat,
As a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board using an adhesive such as solder always have an appropriate temperature,
It is possible to operate normally and stably for a long period of time.
【0061】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
は銅の含有量が20重量%乃至35重量%の銅−タング
ステンから成り、熱膨張係数が7〜10ppm/℃で、
セラミック基板の熱膨張係数に近似することからセラミ
ック基板と金属柱の両者に熱が作用しても両者間に熱膨
張係数の相違に起因する応力が発生することはなく該応
力によってセラミック基板にクラックや割れ等を生じる
こともない。Further, according to the ceramic circuit board of the present invention, the metal pillar disposed in the through hole of the ceramic board is made of copper-tungsten having a copper content of 20% by weight to 35% by weight, and is thermally expanded. When the coefficient is 7 to 10 ppm / ° C,
Since the coefficient of thermal expansion approximates the coefficient of thermal expansion of the ceramic substrate, even if heat acts on both the ceramic substrate and the metal columns, no stress due to the difference in the coefficient of thermal expansion occurs between the two, and the stress causes cracks in the ceramic substrate. There is no occurrence of cracks or the like.
【図1】本発明のセラミック回路基板の一実施例を示す
断面図である。FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.
【図2】本発明の他の実施例を示す断面図である。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図3】本発明の他の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the present invention.
1・・・・セラミック基板 2・・・・メタライズ金属層 3・・・・金属回路板 4・・・・貫通孔 5・・・・金属柱 6・・・・活性金属ロウ材 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Metallized metal layer 3 ... Metal circuit board 4 ... Through-hole 5 ... Metal column 6 ... Active metal brazing material
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 4E351 AA07 BB31 BB33 BB35 BB38 BB49 CC12 CC17 DD04 DD05 DD06 DD10 DD17 DD19 DD21 DD52 EE02 GG03 GG04 GG06 5E317 AA24 BB04 BB11 BB12 BB16 BB18 CC08 CC31 CC52 CD21 CD25 CD27 CD32 GG03 GG05 5E344 AA01 BB06 CC09 CD12 DD01 EE01 EE17 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4E351 AA07 BB31 BB33 BB35 BB38 BB49 CC12 CC17 DD04 DD05 DD06 DD10 DD17 DD19 DD21 DD52 EE02 GG03 GG04 GG06 5E317 AA24 BB04 BB11 BB12 BB16 BB18 CC08 CD31 CD25 CD25 CD25 CD03 CD25 AA01 BB06 CC09 CD12 DD01 EE01 EE17
Claims (1)
記貫通孔を塞ぐように金属回路板を取着させるとともに
貫通孔内に銅の含有量が20重量%乃至35重量%であ
る銅−タングステンから成る金属柱を配置させ、該金属
柱でセラミック基板両面の金属回路板を接続したことを
特徴とするセラミック回路基板。1. A copper-tungsten having a metal circuit board attached to both sides of a ceramic substrate having a through hole so as to cover said through hole and having a copper content of 20 to 35% by weight in the through hole. A metal circuit board comprising: a metal column comprising: a metal circuit board on both sides of a ceramic substrate;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26619399A JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26619399A JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001094223A true JP2001094223A (en) | 2001-04-06 |
Family
ID=17427559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26619399A Pending JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001094223A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103698A (en) * | 2005-10-05 | 2007-04-19 | Fujikura Ltd | Wiring board |
CN108735315A (en) * | 2018-06-04 | 2018-11-02 | 江苏核电有限公司 | A kind of VVER irradiated fuel assemblies storage lattice cell and manufacturing method |
JP2020532094A (en) * | 2017-07-04 | 2020-11-05 | ロジャーズ ジャーマニー ゲーエムベーハーRogers Germany GmbH | A method for producing vias in a carrier layer made of ceramic, and a carrier layer having vias. |
-
1999
- 1999-09-20 JP JP26619399A patent/JP2001094223A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103698A (en) * | 2005-10-05 | 2007-04-19 | Fujikura Ltd | Wiring board |
JP2020532094A (en) * | 2017-07-04 | 2020-11-05 | ロジャーズ ジャーマニー ゲーエムベーハーRogers Germany GmbH | A method for producing vias in a carrier layer made of ceramic, and a carrier layer having vias. |
CN108735315A (en) * | 2018-06-04 | 2018-11-02 | 江苏核电有限公司 | A kind of VVER irradiated fuel assemblies storage lattice cell and manufacturing method |
CN108735315B (en) * | 2018-06-04 | 2024-05-14 | 江苏核电有限公司 | VVER spent fuel assembly storage cell and manufacturing method |
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