JP2001094223A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2001094223A JP2001094223A JP26619399A JP26619399A JP2001094223A JP 2001094223 A JP2001094223 A JP 2001094223A JP 26619399 A JP26619399 A JP 26619399A JP 26619399 A JP26619399 A JP 26619399A JP 2001094223 A JP2001094223 A JP 2001094223A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- circuit board
- copper
- ceramic substrate
- metal circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミック基板の
両面に金属回路板を取着したセラミック回路基板に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board having metal circuit boards attached to both sides of a ceramic substrate.
【０００２】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に被着させたメタライズ金属層に銀−銅合金等
のロウ材を介して銅等から成る金属回路板を接合させた
セラミック回路基板、セラミック基板上に銀−銅共晶合
金にチタン、ジルコニウム、ハフニウムあるいはその水
素化物を添加した活性金属ロウ材を介して銅等から成る
金属回路板を直接接合させたセラミック回路基板、ある
いはセラミック基板上に銅板を載置させた後加熱し直接
セラミック基板と銅板とを接合させた所謂、ＤＢＣ（Ｄ
ｉｒｅｃｔ Ｂｏｎｄ Ｃｏｐｐｅｒ）法によって作製
されたセラミック回路基板が用いられている。2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a metallized metal layer adhered on a ceramic substrate is formed of a metal made of copper or the like via a brazing material such as a silver-copper alloy. A ceramic circuit board with circuit boards joined together, and a metal circuit board made of copper etc. directly joined on the ceramic substrate via an active metal brazing material obtained by adding titanium, zirconium, hafnium or its hydride to a silver-copper eutectic alloy A so-called DBC (D) in which a copper plate is placed on a ceramic circuit board or a ceramic substrate that has been heated and then directly bonded to the ceramic substrate and the copper plate.
A ceramic circuit board manufactured by an direct bond copper method is used.
【０００３】また、これら各セラミック回路基板は金属
回路板の実装密度を高めるためにセラミック基板の上下
両面に金属回路板を接合させておき、これら上下両面の
金属回路板間をセラミック基板に設けた貫通孔内に充填
されているロウ材で電気的に接続することが行われてい
る。In order to increase the mounting density of the metal circuit boards, these ceramic circuit boards are bonded to the upper and lower surfaces of the ceramic substrate, and the upper and lower surfaces of the metal circuit boards are provided on the ceramic substrate. An electrical connection is made with a brazing filler material filled in the through hole.
【０００４】なお、前記セラミック回路基板、例えば、
セラミック基板上に被着させたメタライズ金属層にロウ
材を介して銅等から成る金属回路板を接合させたセラミ
ック回路基板は、一般に酸化アルミニウム質焼結体、窒
化アルミニウム質焼結体、窒化珪素質焼結体、ムライト
質焼結体等の電気絶縁性のセラミックス材料から成り、
上下両面に所定パターンのメタライズ金属層を有し、か
つ厚み方向に貫通する貫通孔を設けたセラミック基板を
準備し、次に前記セラミック基板の貫通孔内に、銀ロウ
粉末（銀と銅の合金粉末）に有機溶剤、溶媒を添加混合
して得たロウ材ペーストを充填するとともにメタライズ
金属層上に間に銀ロウ等のロウ材を挟んで所定パターン
の金属回路板を載置当接させ、しかる後、これを還元雰
囲気中、約９００℃の温度に加熱し、ロウ材ペースト及
びロウ材を溶融させ、メタライズ金属層と金属回路板及
びセラミック基板の上下両面の金属回路板おのおのの銀
ロウ等のロウ材を介して接合することによって製作され
る。[0004] The ceramic circuit board, for example,
A ceramic circuit board in which a metal circuit board made of copper or the like is joined to a metallized metal layer adhered on a ceramic substrate via a brazing material is generally made of an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon nitride. Made of an electrically insulating ceramic material such as a porous sintered body, a mullite sintered body, etc.
A ceramic substrate having a predetermined pattern of metallized metal layers on both upper and lower surfaces and having a through hole penetrating in the thickness direction is prepared. Then, silver brazing powder (an alloy of silver and copper) is provided in the through hole of the ceramic substrate. Powder) with an organic solvent, a brazing material paste obtained by adding and mixing the solvent, and a metal circuit board having a predetermined pattern is placed and brought into contact with the metallized metal layer with a brazing material such as silver brazing interposed therebetween. Thereafter, this is heated in a reducing atmosphere to a temperature of about 900 ° C. to melt the brazing material paste and the brazing material, and to form a metallized metal layer, a metal circuit board, and a silver brazing material on each of the upper and lower metal circuit boards of the ceramic substrate. It is manufactured by joining through the brazing material.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、セラミック基板の
上下両面に接合されている金属回路板同士がセラミック
基板に設けた貫通孔内に充填されているロウ材を介して
電気的に接続されており、該セラミック基板に設けた貫
通孔内へのロウ材の充填はセラミック基板の貫通孔内に
銀ロウ粉末（銀と銅の合金粉末）に有機溶剤、溶媒を添
加混合して得たロウ材ペーストを充填させた後、約９０
０℃の温度に加熱することによって行われ、この場合、
各銀ロウ粉末間に存在する空気が溶融した銀ロウ材中に
多量に抱き込まれて多孔質となり、導通抵抗が比抵抗で
７〜１０μΩｃｍと高いものであった。そのため従来の
セラミック回路基板では金属回路板及び貫通孔内のロウ
材に１０Ａを超える大電流が流れると貫通孔内に充填さ
れたロウ材部分が抵抗発熱し、その熱が金属回路板上に
半田等の接着材を介して接着固定される半導体素子等の
電子部品に作用し、電子部品を高温として安定に作動さ
せることができないという欠点を有していた。However, in this conventional ceramic circuit board, the metal circuit boards joined to the upper and lower surfaces of the ceramic board are filled with a brazing material filled in a through hole formed in the ceramic board. The through hole provided in the ceramic substrate is filled with a brazing filler metal by adding an organic solvent and a solvent to the silver brazing powder (alloy powder of silver and copper) in the through hole of the ceramic substrate. After adding and mixing the brazing material paste obtained by adding
This is done by heating to a temperature of 0 ° C., where
Air existing between the respective silver brazing powders was entrapped in a large amount in the molten silver brazing material and became porous, and the conduction resistance was as high as 7 to 10 μΩcm in specific resistance. Therefore, in a conventional ceramic circuit board, when a large current exceeding 10 A flows through the metal circuit board and the brazing material in the through hole, the brazing material portion filled in the through hole generates resistance heat, and the heat is soldered onto the metal circuit board. It acts on an electronic component such as a semiconductor element which is bonded and fixed via an adhesive material such as the above, and has a drawback that the electronic component cannot be stably operated at a high temperature.
【０００６】本発明は上記欠点に鑑み案出されたもの
で、その目的は抵抗発熱による多量の熱の発生を有効に
防止し、金属回路板に接続される半導体素子等の電子部
品を常に適温として正常、かつ安定に作動させることが
できるセラミック回路基板を提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to effectively prevent the generation of a large amount of heat due to resistance heating and to keep electronic components such as semiconductor elements connected to a metal circuit board at an appropriate temperature. It is another object of the present invention to provide a ceramic circuit board that can operate normally and stably.
【０００７】[0007]
【課題を解決するための手段】本発明のセラミック回路
基板は、貫通孔を有するセラミック基板の両面に前記貫
通孔を塞ぐように金属回路板を取着させるとともに貫通
孔内に銅の含有量が２０重量％乃至３５重量％である銅
−タングステンから成る金属柱を配置させ、該金属柱で
セラミック基板両面の金属回路板を接続したことを特徴
とするものである。According to the ceramic circuit board of the present invention, a metal circuit board is attached to both sides of a ceramic substrate having a through hole so as to cover the through hole, and the content of copper in the through hole is reduced. A metal column made of copper-tungsten of 20% by weight to 35% by weight is arranged, and the metal column connects metal circuit boards on both sides of the ceramic substrate.
【０００８】本発明のセラミック回路基板によれば、セ
ラミック基板の両面に取着されている金属回路板をセラ
ミック基板の貫通孔内に配置されている気孔がほとんど
なく、比抵抗が４μΩｃｍ以下である銅の含有量が２０
重量％乃至３５重量％の銅−タングステンから成る金属
柱を介して電気的に接続したことから金属回路板及び金
属柱に１０Ａを超える大電流が流れたとしても金属柱で
抵抗発熱が起こり、多量の熱を発生することは無く、そ
の結果、金属回路板上に半田等の接着材を用いて接着固
定される半導体素子等の電子部品は常に適温となり、長
期間にわたって正常、かつ安定に作動させることが可能
となる。According to the ceramic circuit board of the present invention, the metal circuit boards attached to both sides of the ceramic board have few pores arranged in the through holes of the ceramic board, and the specific resistance is 4 μΩcm or less. Copper content of 20
Since the electrical connection is made through a metal column made of copper-tungsten of 35% by weight to 35% by weight, even if a large current exceeding 10A flows through the metal circuit board and the metal column, resistance heating occurs in the metal column, and a large amount of heat is generated. As a result, electronic components such as semiconductor elements bonded and fixed on a metal circuit board using an adhesive such as solder are always at an appropriate temperature, and operate normally and stably for a long period of time. It becomes possible.
【０００９】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
は銅の含有量が２０重量％乃至３５重量％の銅−タング
ステンから成り、熱膨張係数が７〜１０ｐｐｍ／℃で、
セラミック基板の熱膨張係数に近似することからセラミ
ック基板と金属柱の両者に熱が作用しても両者間に熱膨
張係数の相違に起因する応力が発生することはなく該応
力によってセラミック基板にクラックや割れ等を生じる
こともない。Further, according to the ceramic circuit board of the present invention, the metal pillar disposed in the through hole of the ceramic board is made of copper-tungsten having a copper content of 20 to 35% by weight, and has a thermal expansion. When the coefficient is 7 to 10 ppm / ° C,
Since the coefficient of thermal expansion approximates the coefficient of thermal expansion of the ceramic substrate, even if heat acts on both the ceramic substrate and the metal columns, no stress due to the difference in the coefficient of thermal expansion occurs between the two, and the stress causes cracks in the ceramic substrate. There is no occurrence of cracks or the like.
【００１０】[0010]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図１は、本発明のセラミック回路基板
の一実施例を示し、１はセラミック基板、２はメタライ
ズ金属層、３は金属回路板である。Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic board, 2 is a metallized metal layer, and 3 is a metal circuit board.
【００１１】前記セラミック基板１は四角形状をなし、
一部に厚み方向に貫通する貫通孔４が形成されており、
該貫通孔４内には金属柱５が挿着されている。The ceramic substrate 1 has a square shape,
Through holes 4 penetrating in the thickness direction are partially formed,
A metal column 5 is inserted into the through hole 4.
【００１２】また前記セラミック基板１はその上下両面
にメタライズ金属層２が被着されており、該メタライズ
金属層２には金属回路板３がロウ付けされている。The ceramic substrate 1 has metallized metal layers 2 attached to the upper and lower surfaces thereof, and a metal circuit board 3 is brazed to the metallized metal layers 2.
【００１３】前記セラミック基板１は酸化アルミニウム
質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化
アルミニウム質焼結体、窒化珪素質燒結体等の電気絶縁
材料から成り、例えば、酸化アルミニウム質焼結体から
成る場合には、酸化アルミニウム、酸化珪素、酸化マグ
ネシウム、酸化カルシウム等の原料粉末に適当な有機バ
インダー、可塑剤、溶剤を添加混合して泥漿状となすと
ともに該泥漿物を従来周知のドクターブレード法やカレ
ンダーロール法を採用することによってセラミックグリ
ーンシート（セラミック生シート）を形成し、しかる
後、前記セラミックグリーンシートに適当な打ち抜き加
工を施し、貫通孔４となる孔を有する所定形状に形成す
るとともに高温（約１６００℃）で焼成することによっ
て、あるいは酸化アルミニウム等の原料粉末に適当な有
機溶剤、溶媒を添加混合して原料粉末を調整するととも
に該原料粉末をプレス成形機によって貫通孔４となる孔
を有した所定形状に形成し、しかる後、前記形成体を約
１６００℃の温度で焼成することによって製作される。The ceramic substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, and a silicon nitride sintered body. When it is made of an aluminum oxide-based sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry, and the slurry is formed. A ceramic green sheet (green ceramic sheet) is formed by employing a conventionally known doctor blade method or calendar roll method, and then the ceramic green sheet is subjected to an appropriate punching process to form a hole serving as a through hole 4. By sintering at a high temperature (about 1600 ° C.) A raw material powder such as minium is mixed with a suitable organic solvent and a solvent to prepare the raw material powder, and the raw material powder is formed into a predetermined shape having a hole to be a through hole 4 by a press molding machine. It is made by firing the compact at a temperature of about 1600 ° C.
【００１４】前記セラミック基板１は金属回路板３を支
持する支持部材として作用し、その上下両面及び貫通孔
４内壁面にメタライズ金属層２が所定パターンに被着形
成されており、該セラミック基板１の上下両面に被着さ
れているメタライズ金属層２には所定パターンの金属回
路板３がロウ付けされている。The ceramic substrate 1 functions as a support member for supporting the metal circuit board 3, and a metallized metal layer 2 is formed in a predetermined pattern on both upper and lower surfaces and on the inner wall surface of the through hole 4. A metal circuit board 3 having a predetermined pattern is brazed to a metallized metal layer 2 attached to both upper and lower surfaces of the metallized metal layer.
【００１５】前記メタライズ金属層２は金属回路板３を
セラミック基板１にロウ付けする際の下地金属層として
作用し、タングステン、モリブデン、マンガン等の高融
点金属材料より成り、例えば、タングステン粉末に適当
な有機バインダー、可塑材、溶剤を添加混合して得た金
属ペーストを焼成によってセラミック基板１となるセラ
ミックグリーンシート（セラミック生シート）の表面に
予め従来周知のスクリーン印刷法により所定パターンに
印刷塗布しておくことによってセラミック基板１の上面
に所定パターン、所定厚み（１０〜５０μｍ）に被着さ
れる。The metallized metal layer 2 acts as a base metal layer when the metal circuit board 3 is brazed to the ceramic substrate 1, and is made of a high melting point metal material such as tungsten, molybdenum, manganese, etc. A metal paste obtained by adding and mixing an organic binder, a plasticizer, and a solvent is preliminarily printed and applied in a predetermined pattern on a surface of a ceramic green sheet (ceramic green sheet) to be a ceramic substrate 1 by firing using a well-known screen printing method. By doing so, a predetermined pattern and a predetermined thickness (10 to 50 μm) are adhered on the upper surface of the ceramic substrate 1.
【００１６】なお、前記メタライズ金属層２はその表面
にニッケル、金等の良導電性で、耐蝕性及びロウ材との
濡れ性が良好な金属をメッキ法により１μｍ〜２０μｍ
の厚みに被着させておくと、メタライズ金属層２の酸化
腐食を有効に防止することができるとともにメタライズ
金属層２と金属回路板３とのロウ付けを極めて強固にな
すことができる。従って、前記メタライズ金属層２の酸
化腐食を有効に防止し、メタライズ金属層２と金属回路
板３とのロウ付けを強固となすにはメタライズ金属層２
の表面にニッケル、金等の良導電性で、耐蝕性及びロウ
材との濡れ性が良好な金属を１μｍ〜２０μｍの厚みに
被着させておくことが好ましい。The metallized metal layer 2 is made of a metal having good conductivity, such as nickel or gold, having good corrosion resistance and good wettability with a brazing material on the surface of the metallized metal layer 2 by a plating method of 1 μm to 20 μm.
When the metallized metal layer 2 is adhered, the metallized metal layer 2 can be effectively prevented from being oxidized and corroded, and the metallized metal layer 2 and the metal circuit board 3 can be extremely firmly brazed. Accordingly, in order to effectively prevent the metallized metal layer 2 from being oxidized and corroded, and to firmly braze the metallized metal layer 2 and the metal circuit board 3, the metallized metal layer 2 is required.
It is preferable that a metal having good conductivity, such as nickel and gold, having good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal to a thickness of 1 μm to 20 μm.
【００１７】前記セラミック基板１の上下両面に被着さ
れているメタライズ金属層２には金属回路板３がセラミ
ック基板１に設けた貫通孔４を塞ぐようにしてロウ材を
介して取着されている。A metal circuit board 3 is attached to a metallized metal layer 2 attached to both upper and lower surfaces of the ceramic substrate 1 via a brazing material so as to cover a through hole 4 provided in the ceramic substrate 1. I have.
【００１８】前記金属回路板３は銅やアルミニウム等の
金属材料から成り、セラミック基板１の上下両面に被着
形成されているメタライズ金属層２上に銀ロウ等のロウ
材を介して取着される。The metal circuit board 3 is made of a metal material such as copper or aluminum. The metal circuit board 3 is attached to the metallized metal layer 2 formed on the upper and lower surfaces of the ceramic substrate 1 via a brazing material such as silver brazing. You.
【００１９】なお、前記銅やアルミニウム等から成る金
属回路板３は、銅やアルミニウム等のインゴット（塊）
に圧延加工法や打ち抜き加工法等、従来周知の金属加工
法を施すことによって、例えば、厚さが５００μｍで、
金属層４のパターン形状に対応する所定パターン形状に
形成される。The metal circuit board 3 made of copper, aluminum or the like is used as an ingot of copper or aluminum.
By applying a conventionally known metal working method such as a rolling method or a punching method to, for example, a thickness of 500 μm,
It is formed in a predetermined pattern shape corresponding to the pattern shape of the metal layer 4.
【００２０】また、前記金属回路板３はこれを無酸素銅
で形成しておくと、該無酸素銅はロウ付けの際に銅の表
面が銅中に存在する酸素により酸化されることなくロウ
材との濡れ性が良好となり、メタライズ金属層２へのロ
ウ材を介しての接合が強固となる。従って、前記金属回
路板３はこれを無酸素銅で形成しておくことが好まし
い。Further, when the metal circuit board 3 is formed of oxygen-free copper, the oxygen-free copper can be brazed without causing the copper surface to be oxidized by oxygen existing in the copper during brazing. The wettability with the material is improved, and the bonding to the metallized metal layer 2 via the brazing material is strengthened. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.
【００２１】更に前記金属回路板３はその表面にニッケ
ルから成る、良導電性で、かつ耐蝕性及びロウ材との濡
れ性が良好な金属をメッキ法により被着させておくと、
金属回路板３に酸化腐食が発生するのを有効に防止する
ことができるとともに金属回路板３と外部電気回路との
電気的接続及び金属回路板３への半導体素子等の電子部
品の接続を強固となすことができる。従って、前記金属
回路板３はその表面にニッケル等から成る、良導電性
で、かつ耐蝕性及びロウ材との濡れ性が良好な金属をメ
ッキ法により被着させておくことが好ましい。Further, when the metal circuit board 3 is coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material by a plating method,
Oxidation corrosion of the metal circuit board 3 can be effectively prevented, and the electrical connection between the metal circuit board 3 and an external electric circuit and the connection of electronic components such as semiconductor elements to the metal circuit board 3 are firmly strengthened. Can be made. Therefore, it is preferable that a metal made of nickel or the like and having good conductivity, good corrosion resistance and good wettability with the brazing material is applied to the surface of the metal circuit board 3 by plating.
【００２２】また更に、前記セラミック基板１に被着さ
れたメタライズ金属層２への金属回路板３のロウ付け
は、メタライズ金属層２上に金属回路板３を、間に、例
えば、銀ロウ材（銀：７２重量％、銅：２８重量％）や
アルミニウムロウ材（アルミニウム：８８重量％、シリ
コン：１２重量％）等から成るロウ材を挟んで載置さ
せ、しかる後、金属回路板３に３０〜１００ｇ／ｃｍ2
の荷重を加えた状態で真空中もしくは中性、還元雰囲気
中、所定温度（銀ロウ材の場合は約９００℃、アルミニ
ウムロウ材の場合は約６００℃）に加熱処理し、ロウ材
を溶融せしめ、該溶融したロウ材でメタライズ金属層２
と金属回路板３とを接合させることによって行われる。Further, the brazing of the metal circuit board 3 to the metallized metal layer 2 attached to the ceramic substrate 1 is performed by interposing the metal circuit board 3 on the metallized metal layer 2 with, for example, a silver brazing material. (Silver: 72% by weight, copper: 28% by weight), aluminum brazing material (aluminum: 88% by weight, silicon: 12% by weight), and the like. 30-100 g / cm 2
In a vacuum or in a neutral or reducing atmosphere, heat is applied to a predetermined temperature (approximately 900 ° C for silver brazing material, approximately 600 ° C for aluminum brazing material) with the load applied to melt the brazing material. Metallized metal layer 2 with the molten brazing material
And the metal circuit board 3.
【００２３】前記金属回路板３がロウ付けされたセラミ
ック基板１はまた貫通孔４の内部に銅−タングステンか
ら成る金属柱５が配置されており、該銅−タングステン
から成る金属柱５はセラミック基板１の上下両面のロウ
付けされている金属回路板３間を電気的に接続する作用
をなす。On the ceramic substrate 1 to which the metal circuit board 3 is brazed, metal pillars 5 made of copper-tungsten are arranged inside the through holes 4. 1 serves to electrically connect the brazed metal circuit boards 3 on the upper and lower surfaces.
【００２４】前記銅−タングステンから成る金属柱５は
銅の含有量を２０重量％〜３５重量％の範囲とした銅−
タングステンにより形成されており、該金属柱５の比抵
抗が４μΩｃｍ以下と小さい、即ち、金属柱５の導通抵
抗が小さいことから金属回路板３及び金属柱５に１０Ａ
を超える大電流が流れたとしても金属回路板３及び金属
柱５より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板３上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【００２５】また、前記銅の含有量を２０重量％〜３５
重量％の範囲とした銅−タングステンから成る金属柱５
は熱膨張係数が７〜１０ｐｐｍ／℃であり、セラミック
基板１の熱膨張係数に近似することからセラミック基板
１と金属柱５の両者に熱が作用したとしても両者間には
熱膨張係数の相違に起因する大きな応力が発生すること
はなく、該応力によってセラミック基板１にクラックや
割れが発生することはない。Further, the content of copper is set to 20% by weight to 35% by weight.
Metal pillars 5 of copper-tungsten in the range of weight%
Has a coefficient of thermal expansion of 7 to 10 ppm / ° C. and is close to the coefficient of thermal expansion of the ceramic substrate 1. Therefore, even if heat is applied to both the ceramic substrate 1 and the metal columns 5, the difference in the coefficient of thermal expansion between the two. Does not cause a large stress, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【００２６】なお、前記銅−タングステンから成る金属
柱５は銅の含有量が２０重量％未満となると比抵抗が４
μΩｃｍを超えて導通抵抗が極めて大きなものとなって
しまい、１０Ａを超える大電流が流れた場合、大量の熱
を発生してしまう。また銅の含有量が３５重量％を超え
ると金属柱５の熱膨張係数が１０ｐｐｍ／℃を超えてセ
ラミック基板１の熱膨張係数に対し大きく相違したもの
となってしまい、セラミック基板１と金属柱５の両者に
熱が作用した時、両者間に熱膨張係数の相違に起因する
応力によってセラミック基板１にクラックや割れ等が発
生してしまう。The metal column 5 made of copper-tungsten has a specific resistance of 4 when the copper content is less than 20% by weight.
The conduction resistance becomes extremely large exceeding μΩcm, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two.
【００２７】従って、前記銅−タングステンから成る金
属柱５は銅の含有量が２０重量％〜３５重量％の範囲に
特定される。Accordingly, the metal column 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【００２８】前記銅−タングステンから成る金属柱５
は、例えば、タングステン粉体を所定温度にて焼結させ
たタングステン焼結体に溶融銅を含浸させることによっ
て製作され、セラミック基板１に設けられた貫通孔４内
に、両端をセラミック基板１の上下両面に取着されてい
る金属回路板３に接触するように配置させるとともに貫
通孔４内壁に被着されているメタライズ金属層２に銀ロ
ウ等のロウ材を介しロウ付けすることによってセラミッ
ク基板１の貫通孔４内に両端がセラミック基板１の上下
両面に取着されている金属回路板３に接触した状態で配
置される。The metal column 5 made of copper-tungsten
Is manufactured, for example, by impregnating molten copper into a tungsten sintered body obtained by sintering a tungsten powder at a predetermined temperature, and having both ends of the ceramic substrate 1 in a through hole 4 provided in the ceramic substrate 1. The ceramic substrate is arranged so as to be in contact with the metal circuit boards 3 attached to the upper and lower surfaces and to the metallized metal layer 2 attached to the inner wall of the through hole 4 via a brazing material such as silver brazing. The two ends of the ceramic substrate 1 are arranged in the through hole 4 in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【００２９】また前記銅−タングステンから成る金属柱
５はその径が２００μｍ未満となると金属柱５の導通抵
抗が大きくなって１０Ａを超える大電流が流れた場合、
抵抗発熱により多量の熱が発生してしまう危険性があ
る。従って、前記金属柱５はその径を２００μｍ以上、
好適には３５０μｍ以上としておくことがよい。特に金
属柱５の径を３５０μｍ以上としておくと金属柱５に２
０Ａを超える大電流が流れても抵抗発熱による多量の熱
を発生することはなく、これによって金属回路板３上に
半田等の接着材を用いて接着固定される半導体素子等の
電子部品を常に適温となすことができ、電子部品を長期
間にわたって正常、かつ安定に作動させることが可能と
なる。When the diameter of the metal column 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal column 5 becomes large and a large current exceeding 10 A flows.
There is a risk that a large amount of heat will be generated due to resistance heating. Therefore, the metal column 5 has a diameter of 200 μm or more,
Preferably, the thickness is 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more,
Even if a large current exceeding 0 A flows, a large amount of heat is not generated due to resistance heating, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 by using an adhesive such as solder is always provided. The temperature can be set to an appropriate temperature, and the electronic component can operate normally and stably for a long period of time.
【００３０】かくして、上述のセラミック回路基板によ
れば、セラミック基板１の上面に取着された金属回路板
３に半田等の接着材を介して半導体素子等の電子部品を
接着固定させるとともに半導体素子等の電子部品の各電
極をボンディングワイヤ等の電気的接続手段を介して金
属回路板３に電気的に接続させれば半導体素子等の電子
部品はセラミック回路基板に実装され、同時に金属回路
板３を外部電気回路に電気的に接続させれば半導体素子
等の電子部品は外部電気回路に接続されることとなる。Thus, according to the above-described ceramic circuit board, electronic components such as semiconductor elements are bonded and fixed to the metal circuit board 3 attached to the upper surface of the ceramic substrate 1 via an adhesive such as solder. When the electrodes of the electronic components such as the electronic components are electrically connected to the metal circuit board 3 through electrical connection means such as bonding wires, the electronic components such as the semiconductor elements are mounted on the ceramic circuit board, and Is electrically connected to an external electric circuit, electronic components such as semiconductor elements are connected to the external electric circuit.
【００３１】次に本発明の他の実施例を図２及び図３に
基づいて説明する。なお、図中、図１と同一箇所につい
ては同一符号が付してある。図２のセラミック回路基板
は、セラミック基板１の上下両面に所定パターンの金属
回路板３が活性金属ロウ材６を介して取着されており、
同時にセラミック基板１に設けた厚み方向に貫通する貫
通孔４内に銅−タングステンから成る金属柱５がその外
表面を活性金属ロウ材６を介して貫通孔４内壁に取着す
ることによって配置されている。Next, another embodiment of the present invention will be described with reference to FIGS. In the figure, the same parts as those in FIG. 1 are denoted by the same reference numerals. The ceramic circuit board of FIG. 2 has a metal circuit board 3 of a predetermined pattern attached to both upper and lower surfaces of a ceramic board 1 via an active metal brazing material 6.
At the same time, a metal pillar 5 made of copper-tungsten is arranged in a through hole 4 penetrating in the thickness direction provided in the ceramic substrate 1 by attaching an outer surface thereof to an inner wall of the through hole 4 via an active metal brazing material 6. ing.
【００３２】前記セラミック基板１に設けた貫通孔４内
に配置されている銅−タングステンから成る金属柱５は
その両端が金属回路板３に接触しており、これによって
セラミック基板１の上下両面に取着されている金属回路
板３は金属柱５を介して電気的に接続されることとな
る。The metal pillars 5 made of copper-tungsten disposed in the through holes 4 provided in the ceramic substrate 1 have both ends in contact with the metal circuit board 3, and are thereby provided on both upper and lower surfaces of the ceramic substrate 1. The attached metal circuit board 3 is electrically connected via the metal pillar 5.
【００３３】前記貫通孔４を有するセラミック基板１は
上述の実施例と同様の材料からなり、同様の方法によっ
て所定形状に作成されている。The ceramic substrate 1 having the through holes 4 is made of the same material as that of the above-described embodiment, and is formed in a predetermined shape by a similar method.
【００３４】また前記セラミック基板１はその上下両面
でセラミック基板１に設けた貫通孔４を塞ぐように金属
回路板３が活性金属ロウ材６を介して取着されており、
該金属回路板３は銅やアルミニウム等の金属材料から成
り、銅やアルミニウム等のインゴット（塊）に圧延加工
法や打ち抜き加工法等、従来周知の金属加工法を施すこ
とによって、例えば、５００μｍの厚みで、所定パター
ンに形成される。Further, a metal circuit board 3 is attached via an active metal brazing material 6 so as to cover through holes 4 formed in the ceramic substrate 1 on both upper and lower surfaces of the ceramic substrate 1.
The metal circuit board 3 is made of a metal material such as copper or aluminum, and is subjected to a well-known metal processing method such as a rolling method or a punching method on an ingot (lumps) of copper or aluminum, for example, to a thickness of 500 μm. It is formed in a predetermined pattern with a thickness.
【００３５】なお、前記金属回路板３はこれを無酸素銅
で形成しておくと、該無酸素銅は活性金属ロウ材６を介
して取着する際、銅の表面が銅中に存在する酸素により
酸化されることなく活性金属ロウ材６との濡れ性が良好
となり、金属回路板３のセラミック基板１への活性金属
ロウ材６を介しての取着接合が強固となる。従って、前
記金属回路板３はこれを無酸素銅で形成しておくことが
好ましい。If the metal circuit board 3 is formed of oxygen-free copper, the surface of copper is present in the copper when the oxygen-free copper is attached via the active metal brazing material 6. The wettability with the active metal brazing material 6 is improved without being oxidized by oxygen, and the attachment joining of the metal circuit board 3 to the ceramic substrate 1 via the active metal brazing material 6 becomes strong. Therefore, it is preferable that the metal circuit board 3 is formed of oxygen-free copper.
【００３６】また前記セラミック基板１は貫通孔４内部
に銅−タングステンから成る金属柱５が配置されてお
り、該金属柱５はセラミック基板１の上下両面のロウ付
けされている金属回路板３間を電気的に接続する作用を
なす。In the ceramic substrate 1, metal pillars 5 made of copper-tungsten are arranged inside the through holes 4, and the metal pillars 5 are provided between the metal circuit boards 3 on the upper and lower surfaces of the ceramic substrate 1 by brazing. Function to electrically connect.
【００３７】前記銅−タングステンから成る金属柱５は
銅の含有量を２０重量％〜３５重量％の範囲とした銅−
タングステンにより形成されており、該金属柱５の比抵
抗が４μΩｃｍ以下と小さい、即ち、金属柱５の導通抵
抗が小さいことから金属回路板３及び金属柱５に１０Ａ
を超える大電流が流れたとしても金属回路板３及び金属
柱５より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板３上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【００３８】また、前記銅の含有量を２０重量％〜３５
重量％の範囲とした銅−タングステンから成る金属柱５
は熱膨張係数が７〜１０ｐｐｍ／℃であり、セラミック
基板１の熱膨張係数に近似することからセラミック基板
１と金属柱５の両者に熱が作用したとしても両者間には
熱膨張係数の相違に起因する大きな応力が発生すること
はなく、該応力によってセラミック基板１にクラックや
割れが発生することはない。Further, the content of copper is set to 20% by weight to 35% by weight.
Metal pillars 5 of copper-tungsten in the range of weight%
Has a coefficient of thermal expansion of 7 to 10 ppm / ° C. and is close to the coefficient of thermal expansion of the ceramic substrate 1. Therefore, even if heat is applied to both the ceramic substrate 1 and the metal columns 5, the difference in the coefficient of thermal expansion between the two. Does not cause a large stress, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【００３９】なお、前記銅−タングステンから成る金属
柱５は銅の含有量が２０重量％未満となると比抵抗が４
μΩｃｍを超えて導通抵抗が極めて大きなものとなって
しまい、１０Ａを超える大電流が流れた場合、大量の熱
を発生してしまう。また銅の含有量が３５重量％を超え
ると金属柱５の熱膨張係数が１０ｐｐｍ／℃を超えてセ
ラミック基板１の熱膨張係数に対し大きく相違したもの
となってしまい、セラミック基板１と金属柱５の両者に
熱が作用した時、両者間に熱膨張係数の相違に起因する
応力によってセラミック基板１にクラックや割れ等が発
生してしまう。The metal column 5 made of copper-tungsten has a specific resistance of 4 when the copper content is less than 20% by weight.
The conduction resistance becomes extremely large exceeding μΩcm, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two.
【００４０】従って、前記銅−タングステンから成る金
属柱５は銅の含有量が２０重量％〜３５重量％の範囲に
特定される。Accordingly, the metal pillar 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【００４１】前記銅−タングステンから成る金属柱５
は、例えば、タングステン粉体を所定温度にて焼結させ
たタングステン焼結体に溶融銅を含浸させることによっ
て製作され、セラミック基板１に設けられた貫通孔４内
に、両端をセラミック基板１の上下両面に取着されてい
る金属回路板３に接触するように配置させるとともに貫
通孔４内壁に被着されているメタライズ金属層２に銀ロ
ウ等のロウ材を介しロウ付けすることによってセラミッ
ク基板１の貫通孔４内に両端がセラミック基板１の上下
両面に取着されている金属回路板３に接触した状態で配
置される。The metal column 5 made of copper-tungsten
Is manufactured, for example, by impregnating molten copper into a tungsten sintered body obtained by sintering a tungsten powder at a predetermined temperature, and having both ends of the ceramic substrate 1 in a through hole 4 provided in the ceramic substrate 1. The ceramic substrate is arranged so as to be in contact with the metal circuit boards 3 attached to the upper and lower surfaces and to the metallized metal layer 2 attached to the inner wall of the through hole 4 via a brazing material such as silver brazing. The two ends of the ceramic substrate 1 are arranged in the through hole 4 in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【００４２】前記銅−タングステンから成る金属柱５は
またその径が２００μｍ未満となると金属柱５の導通抵
抗が大きくなって１０Ａを超える大電流が流れた場合、
抵抗発熱により多量の熱が発生してしまう危険性があ
る。従って、前記金属柱５はその径を２００μｍ以上、
好適には３５０μｍ以上としておくことがよい。特に金
属柱５の径を３５０μｍ以上としておくと金属柱５に２
０Ａを超える大電流が流れても抵抗発熱による多量の熱
を発生することはなく、これによって金属回路板３上に
半田等の接着材を用いて接着固定される半導体素子等の
電子部品を常に適温となすことができ、電子部品を長期
間にわたって正常、かつ安定に作動させることが可能と
なる。When the diameter of the metal pillar 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal pillar 5 becomes large and a large current exceeding 10 A flows.
There is a risk that a large amount of heat will be generated due to resistance heating. Therefore, the metal column 5 has a diameter of 200 μm or more,
Preferably, the thickness is 350 μm or more. In particular, if the diameter of the metal column 5 is set to 350 μm or more,
Even if a large current exceeding 0 A flows, a large amount of heat is not generated due to resistance heating, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 by using an adhesive such as solder is always provided. The temperature can be set to an appropriate temperature, and the electronic component can operate normally and stably for a long period of time.
【００４３】更に前記金属回路板３及び金属柱５は活性
金属ロウ材を使用することによってメタライズ金属層を
不要としてセラミック基板１の上下両面及び貫通孔４内
にロウ付け取着されており、該活性金属ロウ材６として
は金属回路板３が銅で形成されている場合は銀−銅共晶
合金にチタン、ジルコニウム、ハフニウム等の金属もし
くはその水素化物を２〜５重量％添加させたものが、ま
た金属回路板３がアルミニウムで形成されている場合は
アルミニウム−シリコン共晶合金にチタン、ジルコニウ
ム、ハフニウム等の金属もしくはその水素化物を２〜５
重量％添加させたものが好適に使用される。Further, the metal circuit board 3 and the metal pillars 5 are brazed and attached to both the upper and lower surfaces of the ceramic substrate 1 and the through holes 4 without using a metallized metal layer by using an active metal brazing material. When the metal circuit board 3 is formed of copper, the active metal brazing material 6 is obtained by adding a metal such as titanium, zirconium or hafnium or a hydride thereof to a silver-copper eutectic alloy in an amount of 2 to 5% by weight. When the metal circuit board 3 is formed of aluminum, a metal such as titanium, zirconium, hafnium or a hydride thereof is added to the aluminum-silicon eutectic alloy in an amount of 2 to 5 mm.
What added by weight% is used suitably.
【００４４】なお、前記金属回路板３がアルミニウムの
場合、予めセラミック基板１の貫通孔に銅−タングステ
ンから成る金属柱５を銀−銅共晶合金にチタン、ジルコ
ニウム、ハフニウム等の金属もしくはその水素化物を２
〜５重量％添加させた活性金属ロウ材にて取着した後、
金属回路板３をアルミニウム−シリコン共晶合金にチタ
ン、ジルコニウム、ハフニウム等の金属もしくはその水
素化物を２〜５重量％添加させた活性金属ロウ材にてロ
ウ付けされる。When the metal circuit board 3 is made of aluminum, a metal column 5 made of copper-tungsten is previously formed in a through hole of the ceramic substrate 1 with a metal such as titanium, zirconium, hafnium or its hydrogen, in a silver-copper eutectic alloy. 2 monsters
After attaching with the active metal brazing material added with ~ 5% by weight,
The metal circuit board 3 is brazed with an active metal brazing material in which a metal such as titanium, zirconium, hafnium or a hydride thereof is added to an aluminum-silicon eutectic alloy in an amount of 2 to 5% by weight.
【００４５】前記活性金属ロウ材６を使用しての金属回
路板３及び金属柱５の貫通孔４を有するセラミック基板
１への取着はまず、例えば、銀−銅共晶合金にチタン、
ジルコニウム、ハフニウム等の金属もしくはその水素化
物を２〜５重量％添加させたものに有機溶剤、溶媒を混
合して活性金属ロウ材ペーストを作成し、次にセラミッ
ク基板１の上下両面及び貫通孔４内壁に前記活性金属ロ
ウ材ペーストを従来周知のスクリーン印刷法を採用する
ことによって所定パターンに印刷塗布し、次に前記セラ
ミック基板１の貫通孔４内に金属柱５を挿入配置させる
とともにセラミック基板１の上下両面に印刷塗布されて
いる活性金属ロウ材ペースト上に金属回路板３を載置さ
せ、しかる後、これを真空中もしくは中性、還元雰囲気
中、所定温度（銅の場合は約９００℃、アルミニウムの
場合は約６００℃）で加熱処理し、活性金属ロウ材６を
溶融せしめ、該溶融した活性金属ロウ材６でセラミック
基板１と金属回路板３及び金属柱５とを接合させること
によって行われる。Attachment of the metal circuit board 3 and the metal columns 5 to the ceramic substrate 1 having the through holes 4 using the active metal brazing material 6 is performed, for example, by first adding titanium, eutectic alloy to silver-copper eutectic alloy, or the like.
An active metal brazing material paste is prepared by mixing an organic solvent and a solvent with a metal such as zirconium or hafnium or a hydride thereof added in an amount of 2 to 5% by weight. The active metal brazing material paste is applied to the inner wall in a predetermined pattern by employing a conventionally known screen printing method, and then a metal column 5 is inserted into the through hole 4 of the ceramic substrate 1 and the ceramic substrate 1 The metal circuit board 3 is placed on the active metal brazing material paste which is printed and coated on both upper and lower surfaces of the metal circuit board. Thereafter, the metal circuit board 3 is placed in a vacuum or in a neutral or reducing atmosphere at a predetermined temperature (about 900 ° C. for copper). , About 600 ° C. in the case of aluminum) to melt the active metal brazing material 6, and the molten active metal brazing material 6 and the ceramic substrate 1 and the metal circuit are melted. 3 and is carried out by bonding the metal post 5.
【００４６】かかるセラミック回路基板は上述の実施例
と同様、銅−タングステンから成る金属柱５の比抵抗が
４μΩｃｍ以下と小さい、即ち、金属柱５の導通抵抗が
小さいことから金属回路板３及び金属柱５に１０Ａを超
える大電流が流れたとしても金属回路板３及び金属柱５
より抵抗発熱により大量の熱が発生することは無く、そ
の結果、金属回路板３上に半田等の接着材を用いて接着
固定される半導体素子等の電子部品は常に適温となり、
長期間にわたって正常、かつ安定に作動させることが可
能となる。また、かかるセラミック回路基板は上述の実
施例と同様、銅−タングステンから成る金属柱５の熱膨
張係数が７〜１０ｐｐｍ／℃となり、セラミック基板１
の熱膨張係数に近似することからセラミック基板１と金
属柱５との間に両者の熱膨張係数の相違に起因する大き
な応力が発生することはなく、該応力によってセラミッ
ク基板１にクラックや割れが発生することもない。In this ceramic circuit board, the specific resistance of the metal column 5 made of copper-tungsten is as small as 4 μΩcm or less, that is, the metal circuit board 3 and the metal Even if a large current exceeding 10 A flows through the pillar 5, the metal circuit board 3 and the metal pillar 5
A large amount of heat is not generated due to resistance heating, and as a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board 3 using an adhesive such as solder always have an appropriate temperature,
It is possible to operate normally and stably for a long period of time. Further, in the case of such a ceramic circuit board, the thermal expansion coefficient of the metal column 5 made of copper-tungsten is 7 to 10 ppm / ° C., as in the above-described embodiment.
Since the thermal expansion coefficient of the ceramic substrate 1 is close to that of the ceramic substrate 1, no large stress is generated between the ceramic substrate 1 and the metal column 5 due to the difference in the thermal expansion coefficient between the two. It does not occur.
【００４７】更に図３のセラミック回路基板は、セラミ
ック基板１の上下両面に銅から成る所定パターンの金属
回路板３がＤＢＣ（Ｄｉｒｅｃｔ Ｂｏｎｄ Ｃｏｐｐ
ｅｒ）法によって取着されており、同時にセラミック基
板１に設けた厚み方向に貫通する貫通孔４内に銅−タン
グステンから成る金属柱５がその両端を金属回路板３に
接触した状態で配置されている。Further, in the ceramic circuit board shown in FIG. 3, a metal circuit board 3 having a predetermined pattern made of copper is formed on both upper and lower surfaces of the ceramic board 1 by a direct bond cop
er) method, and at the same time, a metal pillar 5 made of copper-tungsten is arranged in a through hole 4 provided in the ceramic substrate 1 and penetrating in the thickness direction, with both ends thereof being in contact with the metal circuit board 3. ing.
【００４８】前記貫通孔４を有するセラミック基板１は
前述の実施例と同様の材料からなり、同様の方法によっ
て所定形状に作成されている。The ceramic substrate 1 having the through holes 4 is made of the same material as that of the above-described embodiment, and is formed in a predetermined shape by the same method.
【００４９】前記セラミック基板１はその上下両面でセ
ラミック基板１に設けた貫通孔４を塞ぐように銅からな
る金属回路板３がＤＢＣ法によって取着されており、該
銅からなる金属回路板３は銅のインゴット（塊）に圧延
加工法や打ち抜き加工法等、従来周知の金属加工法を施
すことによって、例えば、５００μｍの厚みで、所定の
パターンに形成される。The metal substrate 3 made of copper is attached to the ceramic substrate 1 by the DBC method so as to cover the through holes 4 provided in the ceramic substrate 1 on the upper and lower surfaces thereof. Is formed in a predetermined pattern with a thickness of, for example, 500 μm by subjecting a copper ingot (lumps) to a conventionally known metal working method such as a rolling method or a punching method.
【００５０】前記金属回路板３のセラミック基板１の上
下両面への取着は、セラミック基板１の上下両面に金属
回路板３をセラミック基板１に設けた貫通孔４を塞ぐよ
うに載置当接させ、次にこれを真空中もしくは中性、還
元雰囲気中、所定温度（１０６５〜１０８３℃）で加熱
処理し、セラミック基板１の上面と金属回路板３の下面
との間に銅−酸化銅共晶を形成することによってセラミ
ック基板１の表面に取着される。The metal circuit board 3 is attached to the upper and lower surfaces of the ceramic substrate 1 by placing and contacting the metal circuit board 3 on the upper and lower surfaces of the ceramic substrate 1 so as to cover the through holes 4 formed in the ceramic substrate 1. Then, this is heat-treated at a predetermined temperature (1065 to 1083 ° C.) in a vacuum or in a neutral or reducing atmosphere, and a copper-copper oxide is placed between the upper surface of the ceramic substrate 1 and the lower surface of the metal circuit board 3. Crystals are attached to the surface of ceramic substrate 1 by forming crystals.
【００５１】なお、前記銅からなる金属回路板３はその
表面に予め０．０２〜０．５μｍの酸化膜を形成してお
く、あるいは酸素含有量を１００〜２０００ｐｐｍとし
ておくとセラミック基板１と金属回路板３とを接合する
際、銅−酸化銅の共晶形成が容易となってセラミック基
板１に金属回路板３を極めて強固に取着接合させること
ができる。従って、前記銅から成る金属回路板３はその
表面に予め０．０２〜０．５μｍの酸化膜を形成してお
く、あるいは酸素含有量を１００〜２０００ｐｐｍとし
ておくことが好ましい。When the metal circuit board 3 made of copper has an oxide film of 0.02 to 0.5 μm previously formed on its surface or has an oxygen content of 100 to 2000 ppm, the ceramic substrate 1 When joining with the circuit board 3, the eutectic formation of copper-copper oxide is facilitated, and the metal circuit board 3 can be attached and joined to the ceramic substrate 1 very firmly. Therefore, it is preferable that the metal circuit board 3 made of copper has an oxide film of 0.02 to 0.5 μm previously formed on its surface, or has an oxygen content of 100 to 2000 ppm.
【００５２】また前記銅から成る金属回路板３はその表
面にニッケルから成る、良導電性で、かつ耐蝕性及びロ
ウ材との濡れ性が良好な金属をメッキ法により被着させ
ておくと、金属回路板３と半導体素子等の電子部品及び
外部電気回路との電気的接続を良好と成すことができ
る。従って、前記銅から成る金属回路板３はその表面に
ニッケルから成る、良導電性で、かつ耐蝕性及びロウ材
との濡れ性が良好な金属をメッキ法により被着させてお
くことが好ましい。When the metal circuit board 3 made of copper is coated with a metal made of nickel and having good conductivity, good corrosion resistance, and good wettability with a brazing material by plating, Good electrical connection between the metal circuit board 3 and electronic components such as semiconductor elements and external electric circuits can be achieved. Therefore, it is preferable that the metal circuit board 3 made of copper is coated with a metal made of nickel and having good conductivity, good corrosion resistance, and good wettability with the brazing material by plating.
【００５３】更に前記セラミック基板１は貫通孔４の内
部に銅−タングステンから成る金属柱５が配置されてお
り、該金属柱５はセラミック基板１の上下両面に取着さ
れている金属回路板３間を電気的に接続する作用をな
す。Further, the ceramic substrate 1 has metal pillars 5 made of copper-tungsten disposed inside the through holes 4, and the metal pillars 5 are mounted on the upper and lower surfaces of the ceramic substrate 1. It acts to electrically connect between them.
【００５４】前記銅−タングステンから成る金属柱５は
銅の含有量を２０重量％〜３５重量％の範囲とした銅−
タングステンにより形成されており、該金属柱５の比抵
抗が４μΩｃｍ以下と小さい、即ち、金属柱５の導通抵
抗が小さいことから金属回路板３及び金属柱５に１０Ａ
を超える大電流が流れたとしても金属回路板３及び金属
柱５より抵抗発熱により大量の熱が発生することは無
く、その結果、金属回路板３上に半田等の接着材を用い
て接着固定される半導体素子等の電子部品は常に適温と
なり、長期間にわたって正常、かつ安定に作動させるこ
とが可能となる。The metal column 5 made of copper-tungsten has a copper content of 20% by weight to 35% by weight.
It is made of tungsten, and the specific resistance of the metal column 5 is as small as 4 μΩcm or less, that is, since the conduction resistance of the metal column 5 is small, the metal circuit board 3 and the metal column 5 have 10A.
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated by the resistance heating from the metal circuit board 3 and the metal pillar 5, and as a result, the metal circuit board 3 is bonded and fixed using an adhesive such as solder. The electronic components such as semiconductor elements are always kept at an appropriate temperature, and can operate normally and stably for a long period of time.
【００５５】前記銅の含有量を２０重量％〜３５重量％
の範囲とした銅−タングステンから成る金属柱５はまた
その熱膨張係数が７〜１０ｐｐｍ／℃であり、セラミッ
ク基板１の熱膨張係数に近似することからセラミック基
板１と金属柱５の両者に熱が作用したとしても両者間に
は熱膨張係数の相違に起因する大きな応力が発生するこ
とはなく、該応力によってセラミック基板１にクラック
や割れが発生することはない。When the content of copper is 20% by weight to 35% by weight,
The metal pillar 5 made of copper-tungsten having a range of 7 to 10 has a thermal expansion coefficient of 7 to 10 ppm / ° C., and is close to the thermal expansion coefficient of the ceramic substrate 1. Does not cause a large stress between the two due to the difference in the coefficient of thermal expansion, and the stress does not cause cracks or cracks in the ceramic substrate 1.
【００５６】前記銅−タングステンから成る金属柱５は
銅の含有量が２０重量％未満となると比抵抗が４μΩｃ
ｍを超えて導通抵抗が極めて大きなものとなってしま
い、１０Ａを超える大電流が流れた場合、大量の熱を発
生してしまう。また銅の含有量が３５重量％を超えると
金属柱５の熱膨張係数が１０ｐｐｍ／℃を超えてセラミ
ック基板１の熱膨張係数に対し大きく相違したものとな
ってしまい、セラミック基板１と金属柱５の両者に熱が
作用した時、両者間に熱膨張係数の相違に起因する応力
によってセラミック基板１にクラックや割れ等が発生し
てしまう。従って、前記銅−タングステンから成る金属
柱５は銅の含有量が２０重量％〜３５重量％の範囲に特
定される。The metal column 5 made of copper-tungsten has a specific resistance of 4 μΩc when the copper content is less than 20% by weight.
m, the conduction resistance becomes extremely large, and when a large current exceeding 10 A flows, a large amount of heat is generated. If the copper content exceeds 35% by weight, the coefficient of thermal expansion of the metal column 5 exceeds 10 ppm / ° C., which is significantly different from the coefficient of thermal expansion of the ceramic substrate 1. When heat is applied to both of them, cracks and cracks occur in the ceramic substrate 1 due to stress caused by a difference in thermal expansion coefficient between the two. Accordingly, the metal column 5 made of copper-tungsten has a copper content specified in the range of 20% by weight to 35% by weight.
【００５７】更に前記銅−タングステンから成る金属柱
５は、例えば、タングステン粉体を所定温度にて焼結さ
せたタングステン焼結体に溶融銅を含浸させることによ
って製作され、セラミック基板１に設けられた貫通孔４
内に、両端をセラミック基板１の上下両面に取着されて
いる金属回路板３に接触するように配置させるとともに
貫通孔４内壁に被着されているメタライズ金属層２に銀
ロウ等のロウ材を介しロウ付けすることによってセラミ
ック基板１の貫通孔４内に両端がセラミック基板１の上
下両面に取着されている金属回路板３に接触した状態で
配置される。Further, the metal column 5 made of copper-tungsten is manufactured by impregnating molten copper into a tungsten sintered body obtained by sintering tungsten powder at a predetermined temperature, and provided on the ceramic substrate 1. Through hole 4
In the metallized metal layer 2 attached to the inner wall of the through hole 4, a brazing material such as a silver brazing material is disposed so that both ends thereof are in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1. Are arranged in the through holes 4 of the ceramic substrate 1 with both ends in contact with the metal circuit boards 3 attached to the upper and lower surfaces of the ceramic substrate 1.
【００５８】前記銅−タングステンから成る金属柱５は
その径が２００μｍ未満となると金属柱５の導通抵抗が
大きくなって１０Ａを超える大電流が流れた場合い抵抗
発熱により多量の熱が発生してしまう危険性がある。従
って、前記金属柱５はその径を２００μｍ以上、好適に
は３５０μｍ以上としておくこことがよい。特に金属柱
５の径を３５０μｍ以上としておくと金属柱５に２０Ａ
を超える大電流が流れても抵抗発熱による多量の熱を発
生することはなく、これによって金属回路板３上に半田
等の接着材を用いて接着固定される半導体素子等の電子
部品を常に適温となすことができ、電子部品を長期間い
わたって正常、かつ安定に作動させることが可能とな
る。When the diameter of the metal column 5 made of copper-tungsten is less than 200 μm, the conduction resistance of the metal column 5 becomes large, and when a large current exceeding 10 A flows, a large amount of heat is generated due to resistance heating. There is a risk that it will. Therefore, it is preferable that the diameter of the metal column 5 is 200 μm or more, preferably 350 μm or more. In particular, when the diameter of the metal pillar 5 is set to 350 μm or more,
Even if a large current exceeding the maximum current flows, a large amount of heat is not generated due to the resistance heat generation, so that an electronic component such as a semiconductor element adhered and fixed on the metal circuit board 3 using an adhesive such as solder is always kept at an appropriate temperature. The electronic component can be normally and stably operated for a long time.
【００５９】なお本発明は上述の実施例に限定されるも
のではなく、本発明の趣旨を逸脱しない範囲であれば種
々の変更は可能である。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.
【００６０】[0060]
【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板の両面に取着されている金属回路板をセ
ラミック基板の貫通孔内に配置されている気孔がほとん
どなく、比抵抗が４μΩｃｍ以下である銅の含有量が２
０重量％乃至３５重量％の銅−タングステンから成る金
属柱を介して電気的に接続したことから金属回路板及び
金属柱に１０Ａを超える大電流が流れたとしても金属柱
で抵抗発熱が起こり、多量の熱を発生することは無く、
その結果、金属回路板上に半田等の接着材を用いて接着
固定される半導体素子等の電子部品は常に適温となり、
長期間にわたって正常、かつ安定に作動させることが可
能となる。According to the ceramic circuit board of the present invention,
A metal circuit board attached to both sides of a ceramic substrate is provided with almost no pores disposed in the through-holes of the ceramic substrate and having a copper content of 2 μΩcm or less with a copper content of 2 μm or less.
Since the electrical connection is made via a metal pillar made of copper-tungsten of 0 wt% to 35 wt%, even if a large current exceeding 10 A flows through the metal circuit board and the metal pillar, resistance heating occurs in the metal pillar, Does not generate a lot of heat,
As a result, electronic components such as semiconductor elements bonded and fixed on the metal circuit board using an adhesive such as solder always have an appropriate temperature,
It is possible to operate normally and stably for a long period of time.
【００６１】また、本発明のセラミック回路基板によれ
ば、セラミック基板の貫通孔内に配置されている金属柱
は銅の含有量が２０重量％乃至３５重量％の銅−タング
ステンから成り、熱膨張係数が７〜１０ｐｐｍ／℃で、
セラミック基板の熱膨張係数に近似することからセラミ
ック基板と金属柱の両者に熱が作用しても両者間に熱膨
張係数の相違に起因する応力が発生することはなく該応
力によってセラミック基板にクラックや割れ等を生じる
こともない。Further, according to the ceramic circuit board of the present invention, the metal pillar disposed in the through hole of the ceramic board is made of copper-tungsten having a copper content of 20% by weight to 35% by weight, and is thermally expanded. When the coefficient is 7 to 10 ppm / ° C,
Since the coefficient of thermal expansion approximates the coefficient of thermal expansion of the ceramic substrate, even if heat acts on both the ceramic substrate and the metal columns, no stress due to the difference in the coefficient of thermal expansion occurs between the two, and the stress causes cracks in the ceramic substrate. There is no occurrence of cracks or the like.
【図１】本発明のセラミック回路基板の一実施例を示す
断面図である。FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.
【図２】本発明の他の実施例を示す断面図である。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図３】本発明の他の実施例を示す断面図である。FIG. 3 is a sectional view showing another embodiment of the present invention.
１・・・・セラミック基板 ２・・・・メタライズ金属層 ３・・・・金属回路板 ４・・・・貫通孔 ５・・・・金属柱 ６・・・・活性金属ロウ材 DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate 2 ... Metallized metal layer 3 ... Metal circuit board 4 ... Through-hole 5 ... Metal column 6 ... Active metal brazing material
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 4E351 AA07 BB31 BB33 BB35 BB38 BB49 CC12 CC17 DD04 DD05 DD06 DD10 DD17 DD19 DD21 DD52 EE02 GG03 GG04 GG06 5E317 AA24 BB04 BB11 BB12 BB16 BB18 CC08 CC31 CC52 CD21 CD25 CD27 CD32 GG03 GG05 5E344 AA01 BB06 CC09 CD12 DD01 EE01 EE17 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4E351 AA07 BB31 BB33 BB35 BB38 BB49 CC12 CC17 DD04 DD05 DD06 DD10 DD17 DD19 DD21 DD52 EE02 GG03 GG04 GG06 5E317 AA24 BB04 BB11 BB12 BB16 BB18 CC08 CD31 CD25 CD25 CD25 CD03 CD25 AA01 BB06 CC09 CD12 DD01 EE01 EE17
Claims (1)
記貫通孔を塞ぐように金属回路板を取着させるとともに
貫通孔内に銅の含有量が２０重量％乃至３５重量％であ
る銅−タングステンから成る金属柱を配置させ、該金属
柱でセラミック基板両面の金属回路板を接続したことを
特徴とするセラミック回路基板。1. A copper-tungsten having a metal circuit board attached to both sides of a ceramic substrate having a through hole so as to cover said through hole and having a copper content of 20 to 35% by weight in the through hole. A metal circuit board comprising: a metal column comprising: a metal circuit board on both sides of a ceramic substrate;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26619399A JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26619399A JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001094223A true JP2001094223A (en) | 2001-04-06 |
Family
ID=17427559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26619399A Pending JP2001094223A (en) | 1999-09-20 | 1999-09-20 | Ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001094223A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103698A (en) * | 2005-10-05 | 2007-04-19 | Fujikura Ltd | Wiring board |
| CN108735315A (en) * | 2018-06-04 | 2018-11-02 | 江苏核电有限公司 | A kind of VVER irradiated fuel assemblies storage lattice cell and manufacturing method |
| JP2020532094A (en) * | 2017-07-04 | 2020-11-05 | ロジャーズ ジャーマニー ゲーエムベーハーＲｏｇｅｒｓ Ｇｅｒｍａｎｙ ＧｍｂＨ | A method for producing vias in a carrier layer made of ceramic, and a carrier layer having vias. |
-
1999
- 1999-09-20 JP JP26619399A patent/JP2001094223A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007103698A (en) * | 2005-10-05 | 2007-04-19 | Fujikura Ltd | Wiring board |
| JP2020532094A (en) * | 2017-07-04 | 2020-11-05 | ロジャーズ ジャーマニー ゲーエムベーハーＲｏｇｅｒｓ Ｇｅｒｍａｎｙ ＧｍｂＨ | A method for producing vias in a carrier layer made of ceramic, and a carrier layer having vias. |
| CN108735315A (en) * | 2018-06-04 | 2018-11-02 | 江苏核电有限公司 | A kind of VVER irradiated fuel assemblies storage lattice cell and manufacturing method |
| CN108735315B (en) * | 2018-06-04 | 2024-05-14 | 江苏核电有限公司 | VVER spent fuel assembly storage cell and manufacturing method |
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