JP2001177194A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2001177194A JP2001177194A JP35631699A JP35631699A JP2001177194A JP 2001177194 A JP2001177194 A JP 2001177194A JP 35631699 A JP35631699 A JP 35631699A JP 35631699 A JP35631699 A JP 35631699A JP 2001177194 A JP2001177194 A JP 2001177194A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- metal circuit
- ceramic
- ceramic substrate
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structure Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、セラミック基板に
金属回路板をロウ付けにより接合したセラミック回路基
板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board in which a metal circuit board is joined to a ceramic substrate by brazing.
【0002】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に被着させたメタライズ金属層に銀−銅合金等
のロウ材を介して銅等から成る金属回路板を接合させた
セラミック回路基板、あるいはセラミック基板上に銀−
銅共晶合金にチタン、ジルコニウム、ハフニウムまたは
その水素化物を添加した活性金属ロウ材を介して銅等か
ら成る金属回路板を直接接合させたセラミック回路基板
が用いられている。2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a metallized metal layer adhered on a ceramic substrate is formed of a metal made of copper or the like via a brazing material such as a silver-copper alloy. A ceramic circuit board with a circuit board bonded, or silver
A ceramic circuit board is used in which a metal circuit board made of copper or the like is directly joined to a copper eutectic alloy via an active metal brazing material obtained by adding titanium, zirconium, hafnium or a hydride thereof.
【0003】かかるセラミック回路基板、例えば、セラ
ミック基板上に被着させたメタライズ金属層にロウ材を
介して銅等から成る金属回路板を接合させたセラミック
回路基板は、一般に酸化アルミニウム質焼結体、窒化ア
ルミニウム質焼結体、窒化珪素質焼結体、ムライト質焼
結体等の電気絶縁性のセラミックス材料から成るセラミ
ック基板の表面にメタライズ金属層を被着させておき、
該メタライズ金属層に銅等の金属材料から成る金属回路
板を銀ロウ等のロウ材を介しロウ付けすることによって
形成されており、具体的には、例えば、セラミック基板
が酸化アルミニウム質焼結体から成る場合には、酸化ア
ルミニウム、酸化珪素、酸化マグネシウム、酸化カルシ
ウム等の原料粉末に適当な有機バインダー、可塑剤、溶
剤等を添加混合して泥漿状と成すとともにこれを従来周
知のドクターブレード法やカレンダーロール法等のテー
プ成形技術を採用して複数のセラミックグリーンシート
を得、次に前記セラミックグリーンシート上にタングス
テンやモリブデン等の高融点金属粉末に適当な有機バイ
ンダー、可塑剤、溶剤を添加混合して得た金属ペースト
をスクリーン印刷法等の厚膜形成技術を採用することに
よって所定パターンに印刷塗布し、次に前記金属ペース
トが所定パターンに印刷塗布されたセラミックグリーン
シートを必要に応じて上下に積層するとともに還元雰囲
気中、約1600℃の温度で焼成し、セラミックグリー
ンシートと金属ペーストを焼結一体化させて表面にメタ
ライズ金属層を有する酸化アルミニウム質焼結体から成
るセラミック基板を形成し、最後に前記セラミック基板
表面のメタライズ金属層上に銅等から成る所定パターン
の金属回路板を間に銀ロウ等のロウ材を挟んで載置させ
るとともにこれを還元雰囲気中、約900℃の温度に加
熱してロウ材を溶融させ、該溶融したロウ材でメタライ
ズ金属層と金属回路板とを接合することによって製作さ
れる。[0003] Such a ceramic circuit board, for example, a ceramic circuit board in which a metal circuit board made of copper or the like is joined to a metallized metal layer adhered on the ceramic board via a brazing material, is generally made of an aluminum oxide sintered body. A metallized metal layer is applied to the surface of a ceramic substrate made of an electrically insulating ceramic material such as an aluminum nitride sintered body, a silicon nitride sintered body, a mullite sintered body, etc.
The metallized metal layer is formed by brazing a metal circuit board made of a metal material such as copper via a brazing material such as silver brazing. Specifically, for example, a ceramic substrate is made of an aluminum oxide sintered body. In the case of consisting of, raw material powders such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide are mixed with an appropriate organic binder, a plasticizer, a solvent and the like to form a slurry, which is then mixed with a conventionally known doctor blade method. A plurality of ceramic green sheets are obtained by adopting a tape forming technique such as or a calender roll method, and then an appropriate organic binder, a plasticizer, and a solvent are added to the high melting point metal powder such as tungsten or molybdenum on the ceramic green sheets. The metal paste obtained by mixing is subjected to a predetermined pattern by employing a thick film forming technology such as screen printing. Then, the ceramic green sheets, on which the metal paste is printed and applied in a predetermined pattern, are laminated one on top of the other as necessary and fired at a temperature of about 1600 ° C. in a reducing atmosphere. To form a ceramic substrate made of an aluminum oxide sintered body having a metallized metal layer on the surface, and finally a metal circuit board of a predetermined pattern made of copper or the like on the metallized metal layer on the surface of the ceramic substrate. And a brazing material such as a silver brazing material is interposed therebetween and heated in a reducing atmosphere at a temperature of about 900 ° C. to melt the brazing material, and the metallized metal layer and the metal circuit board are melted with the molten brazing material. It is produced by joining
【0004】なお、前記メタライズ金属層及び金属回路
板の露出表面には酸化腐食を有効に防止するとともに金
属回路板に半導体素子等の電子部品を半田等の接着材を
介して強固に接続させるために、ニッケル等の耐蝕性に
優れ、かつ半田等の接着材に対し濡れ性が良い金属がメ
ッキ法等の技術を用いることによって所定厚みに被着さ
れている。In order to effectively prevent oxidative corrosion on the metallized metal layer and the exposed surface of the metal circuit board, and to firmly connect electronic components such as semiconductor elements to the metal circuit board via an adhesive such as solder. In addition, a metal having excellent corrosion resistance such as nickel and having good wettability with respect to an adhesive such as solder is applied to a predetermined thickness by using a technique such as a plating method.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、セラミック基板の
熱膨張係数が約3ppm/℃〜7ppm/℃(酸化アル
ミニウム質焼結体:約7ppm/℃、窒化アルミニウム
質焼結体:約4ppm/℃、窒化珪素質焼結体:約3p
pm/℃)であるのに対し、銅やアルミニウム等から成
る金属回路板の熱膨張係数が約18ppm/℃〜約23
ppm/℃(銅:約18ppm/℃、アルミニウム:約
23ppm/℃)であり、セラミック基板と金属回路板
の熱膨張係数が大きく相違することからセラミック基板
の上面に被着されたメタライズ金属層に金属回路板を銀
ロウ等のロウ材を介して取着する際、セラミック基板と
金属回路板との間に両者の熱膨張係数の相違に起因する
大きな応力が発生し、該応力によってセラミック回路基
板に反りが生じて半導体素子の実装に支障をきたすとい
う欠点を有していた。またこの時の反りが大きいとセラ
ミック基板が脆弱であるためセラミック基板に割れが発
生し、セラミック回路基板としての機能が喪失してしま
うという欠点も有する。However, in this conventional ceramic circuit board, the coefficient of thermal expansion of the ceramic substrate is about 3 ppm / ° C. to 7 ppm / ° C. (aluminum oxide sintered body: about 7 ppm / ° C., aluminum nitride Sintered body: about 4 ppm / ° C, silicon nitride based sintered body: about 3 p
pm / ° C), whereas the coefficient of thermal expansion of a metal circuit board made of copper, aluminum or the like is about 18 ppm / ° C to about 23 ppm.
ppm / ° C (copper: about 18 ppm / ° C, aluminum: about 23 ppm / ° C), and since the thermal expansion coefficients of the ceramic substrate and the metal circuit board are significantly different, the metallized metal layer adhered to the upper surface of the ceramic substrate When a metal circuit board is attached via a brazing material such as silver brazing, a large stress is generated between the ceramic substrate and the metal circuit board due to a difference in the coefficient of thermal expansion between the ceramic substrate and the metal circuit board. Of the semiconductor device, which causes a problem in mounting the semiconductor element. In addition, if the warpage is large, the ceramic substrate is fragile, causing cracks in the ceramic substrate, resulting in a loss of the function as a ceramic circuit substrate.
【0006】本発明は上記欠点に鑑み案出されたもの
で、その目的は反りやセラミック基板に割れが発生する
のを有効に防止し、半導体素子等の電子部品を信頼性よ
く実装可能とするとともに電子部品を安定して作動させ
ることができるセラミック回路基板を提供することにあ
る。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned drawbacks, and has as its object to effectively prevent warpage and cracking of a ceramic substrate so that electronic components such as semiconductor elements can be mounted with high reliability. Another object of the present invention is to provide a ceramic circuit board capable of stably operating electronic components.
【0007】[0007]
【課題を解決するための手段】本発明は、セラミック基
板の上面に金属回路板を取着して成るセラミック回路基
板であって、前記セラミック基板の下面に前記金属回路
板と対応するダミー金属回路板を取着するとともに、該
ダミー金属回路板の外周位置を前記金属回路板よりも外
側に位置させ、かつその位置がダミー金属回路板の外周
位置をX、前記金属回路板の外周位置をY、セラミック
基板の厚みをZとしたとき、Y+0.1(mm)≦X≦
Y+Zであることを特徴とするものである。According to the present invention, there is provided a ceramic circuit board having a metal circuit board attached to an upper surface of a ceramic substrate, wherein a dummy metal circuit corresponding to the metal circuit board is provided on a lower surface of the ceramic substrate. At the same time, the outer peripheral position of the dummy metal circuit board is located outside the metal circuit board, and the outer peripheral position of the dummy metal circuit board is X, and the outer peripheral position of the metal circuit board is Y. When the thickness of the ceramic substrate is Z, Y + 0.1 (mm) ≦ X ≦
Y + Z.
【0008】本発明のセラミック回路基板によれば、上
面に金属回路板が取着されているセラミック基板の下面
に前記金属回路板と対応するダミー金属回路板を対称に
取着したことからセラミック基板と金属回路板との間お
よびセラミック基板とダミー金属回路板との間に、熱膨
張係数の相違に起因する応力が生じ、反りが発生しよう
とするがその反りの発生方向は互いに異なるために相殺
され、その結果、セラミック基板に反りが発生すること
はなく平坦となり、セラミック回路基板に半導体素子等
の電子部品を確実、強固に実装することが可能となる。According to the ceramic circuit board of the present invention, the dummy metal circuit board corresponding to the metal circuit board is symmetrically mounted on the lower surface of the ceramic substrate having the metal circuit board mounted on the upper surface. Between the substrate and the metal circuit board, and between the ceramic substrate and the dummy metal circuit board, stress due to the difference in the coefficient of thermal expansion occurs and warpage occurs, but the directions of the warpage are different from each other, canceling out. As a result, the ceramic substrate does not warp and becomes flat, and electronic components such as semiconductor elements can be securely and firmly mounted on the ceramic circuit substrate.
【0009】また本発明のセラミック回路基板によれ
ば、金属回路板の外周位置とダミー金属回路板の外周位
置とを異ならせたことからセラミック基板と金属回路板
との間に発生する応力によって生じるセラミック基板の
クラック発生位置と、セラミック基板とダミー金属回路
板との間に発生する応力によって生じるセラミック基板
のクラック発生位置とが異なり,その結果、セラミック
基板の割れ等が有効に防止され、セラミック回路基板と
しての機械的強度の信頼性を高いものとなすことができ
る。Further, according to the ceramic circuit board of the present invention, since the outer peripheral position of the metal circuit board is different from the outer peripheral position of the dummy metal circuit board, it is caused by the stress generated between the ceramic substrate and the metal circuit board. The crack generation position on the ceramic substrate is different from the crack generation position on the ceramic substrate caused by the stress generated between the ceramic substrate and the dummy metal circuit board.As a result, the ceramic substrate is effectively prevented from cracking, etc. The reliability of mechanical strength as a substrate can be made high.
【0010】更に本発明のセラミック回路基板によれ
ば、ダミー金属回路板の外周位置を金属回路板の外周位
置より外側とするとともにその位置を金属回路板の外周
位置より0.1mm以上、セラミック基板の厚み分以内
としたことからセラミック回路基板に熱が作用したとし
てもセラミック回路基板に大きな反りが生じることはな
く、同時に半導体素子等の電子部品が作動時に発する熱
をダミー金属回路板がセラミック基板を介して効率よく
吸収するとともに外部に良好に放出し、電子部品の冷却
効果を良として電子部品を安定に作動させることができ
る。Further, according to the ceramic circuit board of the present invention, the outer peripheral position of the dummy metal circuit board is set outside the outer peripheral position of the metal circuit board, and the position is 0.1 mm or more from the outer peripheral position of the metal circuit board. Even when heat acts on the ceramic circuit board, the ceramic circuit board does not warp significantly, and at the same time, the dummy metal circuit board generates heat generated when electronic components such as semiconductor elements are operated. , And efficiently discharge to the outside, so that the electronic component can be operated stably with a good cooling effect of the electronic component.
【0011】[0011]
【発明の実施の形態】次に、本発明を添付図面に示す実
施例に基づいて詳細に説明する。図1は、本発明のセラ
ミック回路基板の一実施例を示し、1はセラミック基
板、2はメタライズ金属層、3は金属回路板、4はダミ
ー金属回路板である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail based on embodiments shown in the accompanying drawings. FIG. 1 shows an embodiment of a ceramic circuit board according to the present invention, wherein 1 is a ceramic substrate, 2 is a metallized metal layer, 3 is a metal circuit board, and 4 is a dummy metal circuit board.
【0012】前記セラミック基板1は四角形状をなし、
その上下両面にメタライズ金属層2が被着されており、
該メタライズ金属層2には金属回路板3、ダミー金属回
路板4がロウ付けされている。The ceramic substrate 1 has a square shape,
Metallized metal layers 2 are adhered on both upper and lower surfaces,
A metal circuit board 3 and a dummy metal circuit board 4 are brazed to the metallized metal layer 2.
【0013】前記セラミック基板1は金属回路板3、ダ
ミー金属回路板4を支持する支持部材として作用し、酸
化アルミニウム質焼結体、ムライト質焼結体、炭化珪素
質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結
体、ムライト質焼結体等の電気絶縁材料で形成されてい
る。The ceramic substrate 1 functions as a support member for supporting the metal circuit board 3 and the dummy metal circuit board 4, and is made of a sintered body of aluminum oxide, a sintered body of mullite, a sintered body of silicon carbide, a body of aluminum nitride. It is formed of an electrically insulating material such as a sintered body, a silicon nitride-based sintered body, and a mullite-based sintered body.
【0014】前記セラミック基板1は、例えば、酸化ア
ルミニウム質焼結体で形成されている場合、酸化アルミ
ニウム、酸化珪素、酸化マグネシウム、酸化カルシウム
等の原料粉末に適当な有機バインダー、可塑剤、溶剤を
添加混合して泥漿状となすとともに該泥漿物を従来周知
のドクターブレード法やカレンダーロール法を採用する
ことによってセラミックグリーンシート(セラミック生
シート)を形成し、次に前記セラミックグリーンシート
に適当な打ち抜き加工を施し、所定形状となすとともに
必要に応じて複数枚を上下に積層して成形体となし、し
かる後、これを約1600℃の高温で焼成することによ
って、あるいは酸化アルミニウム等の原料粉末に適当な
有機溶剤、溶媒を添加混合して原料粉末を調整するとと
もに該原料粉末をプレス成形技術によって所定形状に成
形し、しかる後、前記成形体を約1600℃の温度で焼
成することによって製作される。When the ceramic substrate 1 is formed of, for example, an aluminum oxide sintered body, a suitable organic binder, a plasticizer, and a solvent are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The mixture is added to form a slurry, and the slurry is formed into a ceramic green sheet (ceramic green sheet) by employing a well-known doctor blade method or calender roll method. It is processed and formed into a predetermined shape and, if necessary, a plurality of sheets are vertically stacked to form a molded body. Thereafter, this is fired at a high temperature of about 1600 ° C., or a raw material powder such as aluminum oxide is formed. A suitable organic solvent and a solvent are added and mixed to adjust the raw material powder, and the raw material powder is Molded into a predetermined shape by press forming technique, and thereafter, is manufactured by firing the molded body at a temperature of about 1600 ° C..
【0015】また前記セラミック基板1はその上下両面
に所定パターンのメタライズ金属層2が被着されてお
り、該メタライズ金属層2は金属回路板3やダミー金属
回路板4をセラミック基板1にロウ付けする際の下地金
属層として作用する。The ceramic substrate 1 has metallized metal layers 2 of a predetermined pattern adhered to upper and lower surfaces thereof, and the metallized metal layers 2 are formed by brazing a metal circuit board 3 or a dummy metal circuit board 4 to the ceramic substrate 1. In this case, it acts as a base metal layer.
【0016】前記メタライズ金属層2は、タングステ
ン、モリブデン、マンガン等の高融点金属材料より成
り、例えば、タングステン粉末に適当な有機バインダ
ー、可塑材、溶剤を添加混合して得た金属ペーストを焼
成によってセラミック基板1となるセラミックグリーン
シート(セラミック生シート)の表面に予め従来周知の
スクリーン印刷法により所定パターンに印刷塗布してお
くことによってセラミック基板1の上下両面に所定パタ
ーン、所定厚み(10〜50μm)に被着される。The metallized metal layer 2 is made of a high melting point metal material such as tungsten, molybdenum, and manganese. For example, a metal paste obtained by adding an appropriate organic binder, a plasticizer, and a solvent to tungsten powder and mixing the resulting mixture is fired. A predetermined pattern and a predetermined thickness (10 to 50 μm) are formed on the upper and lower surfaces of the ceramic substrate 1 by printing and applying a predetermined pattern on the surface of a ceramic green sheet (ceramic raw sheet) serving as the ceramic substrate 1 by a conventionally known screen printing method. ).
【0017】なお、前記メタライズ金属層2はその表面
にニッケル、金等の良導電性で、耐蝕性及びロウ材との
濡れ性が良好な金属をメッキ法により1μm〜20μm
の厚みに被着させておくと、メタライズ金属層2の酸化
腐食を有効に防止することができるとともにメタライズ
金属層2と金属回路板3及びダミー金属回路板4とのロ
ウ付けを極めて強固となすことができる。従って、前記
メタライズ金属層2の酸化腐蝕を有効に防止し、メタラ
イズ金属層2と金属回路板3及びダミー金属回路板4と
のロウ付けを強固となすにはメタライズ金属層2の表面
にニッケル、金等の良導電性で、耐蝕性及びロウ材との
濡れ性が良好な金属を1μm〜20μmの厚みに被着さ
せておくことが好ましい。The metallized metal layer 2 is coated on its surface with a metal having good conductivity, such as nickel or gold, having good corrosion resistance and good wettability with a brazing material by a plating method of 1 μm to 20 μm.
In this case, the metallized metal layer 2 can be effectively prevented from being oxidized and corroded, and the brazing of the metallized metal layer 2 to the metal circuit board 3 and the dummy metal circuit board 4 is made extremely strong. be able to. Accordingly, in order to effectively prevent the metallized metal layer 2 from being oxidized and corroded, and to firmly braze the metallized metal layer 2 with the metal circuit board 3 and the dummy metal circuit board 4, it is necessary to use nickel or nickel on the surface of the metallized metal layer 2. It is preferable that a metal such as gold having good conductivity, good corrosion resistance and good wettability with the brazing material is applied to a thickness of 1 μm to 20 μm.
【0018】また前記メタライズ金属層2はその上面に
金属回路板3やダミー金属回路板4がロウ材5を介して
取着されている。On the upper surface of the metallized metal layer 2, a metal circuit board 3 and a dummy metal circuit board 4 are attached via a brazing material 5.
【0019】前記金属回路板3及びダミー金属回路板4
は銅やアルミニウム等の金属材料から成り、セラミック
基板1の上下両面に被着形成されているメタライズ金属
層2上に金属回路板3及びダミー金属回路板4を、例え
ば、銀ロウ材(銀:72重量%、銅:28重量%)やア
ルミニウムロウ材(アルミニウム:88重量%、シリコ
ン:12重量%)等から成るロウ材5を挟んで載置さ
せ、しかる後、これを真空中もしくは中性、還元雰囲気
中、所定温度(銀ロウ材の場合は約900℃、アルミニ
ウムロウ材の場合は約600℃)に加熱処理し、ロウ材
5を溶融せしめるとともに各メタライズ金属層2の上面
と金属回路板3、ダミー金属回路板4の下面とを接合さ
せることによってセラミック基板1の上下両面に取着さ
れることとなる。The metal circuit board 3 and the dummy metal circuit board 4
Is formed of a metal material such as copper or aluminum, and a metal circuit board 3 and a dummy metal circuit board 4 are formed on a metallized metal layer 2 formed on the upper and lower surfaces of a ceramic substrate 1 by, for example, a silver brazing material (silver: 72% by weight, 28% by weight of copper) and a brazing material 5 made of aluminum brazing material (88% by weight of aluminum, 12% by weight of silicon), and then placed in vacuum or neutral. In a reducing atmosphere, a heat treatment is performed at a predetermined temperature (about 900 ° C. for a silver brazing material, about 600 ° C. for an aluminum brazing material) to melt the brazing material 5 and to connect the upper surface of each metallized metal layer 2 to the metal circuit. By joining the plate 3 and the lower surface of the dummy metal circuit board 4, they are attached to the upper and lower surfaces of the ceramic substrate 1.
【0020】前記銅やアルミニウム等から成る金属回路
板3やダミー金属回路板4は、銅やアルミニウム等のイ
ンゴット(塊)に圧延加工法や打ち抜き加工法等、従来
周知の金属加工法を施すことによって、例えば、厚さが
500μmで、メタライズ金属層2のパターン形状に対
応する所定パターン形状に製作される。The metal circuit board 3 or the dummy metal circuit board 4 made of copper, aluminum, or the like is obtained by subjecting an ingot (lumps) of copper, aluminum, or the like to a conventionally known metal processing method such as a rolling method or a punching method. For example, the metallized metal layer 2 is manufactured in a predetermined pattern shape corresponding to the pattern shape of the metallized metal layer 2 with a thickness of 500 μm.
【0021】前記ダミー金属回路板4はその形状がほぼ
金属回路板3の形状に対応しており、上面に金属回路板
3が取着されているセラミック基板1の下面に前記金属
回路板3と対応するダミー金属回路板4を対称に取着し
たことからセラミック基板1と金属回路板3との間およ
びセラミック基板1とダミー金属回路板4との間に、熱
膨張係数の相違に起因する応力が生じ、反りが発生しよ
うとしてもその反りの発生方向は互いに異なるために相
殺され、その結果、セラミック基板1に反りが発生する
ことはなく平坦となり、セラミック回路基板に半導体素
子等の電子部品を確実、強固に実装することが可能とな
る。The shape of the dummy metal circuit board 4 substantially corresponds to the shape of the metal circuit board 3. The metal circuit board 3 is attached to the lower surface of the ceramic substrate 1 on which the metal circuit board 3 is mounted. Since the corresponding dummy metal circuit boards 4 are mounted symmetrically, stresses caused by the difference in thermal expansion coefficient between the ceramic substrate 1 and the metal circuit board 3 and between the ceramic substrate 1 and the dummy metal circuit board 4. When warping occurs, the directions in which the warping occurs are different from each other, and the directions are offset. As a result, the ceramic substrate 1 is flat without warpage, and electronic components such as semiconductor elements are mounted on the ceramic circuit board. It is possible to surely and firmly mount.
【0022】また前記ダミー金属回路板4はその外周位
置が前記金属回路板3の外周位置よりも外側に位置し、
かつその位置がダミー金属回路板4の外周位置をX、金
属回路板3の外周位置をY、セラミック基板1の厚みを
Zとしたとき、Y+0.1(mm)≦X≦Y+Zとなっ
ている。The outer peripheral position of the dummy metal circuit board 4 is located outside the outer peripheral position of the metal circuit board 3;
Further, when the position is X, the outer circumferential position of the dummy metal circuit board 4 is X, the outer circumferential position of the metal circuit board 3 is Y, and the thickness of the ceramic substrate 1 is Z, Y + 0.1 (mm) ≦ X ≦ Y + Z. .
【0023】前記ダミー金属回路板4はその外周位置が
金属回路板3の外周位置に対して異なる位置にあること
からセラミック基板1と金属回路板3との間に発生する
応力によって生じるセラミック基板1のクラック発生位
置と、セラミック基板1とダミー金属回路板4との間に
発生する応力によって生じるセラミック基板1のクラッ
ク発生位置とは異なり,その結果、セラミック基板1に
割れ等が発生するのが有効に防止され、セラミック回路
基板としての機械的強度の信頼性を高いものとなすこと
ができる。Since the outer peripheral position of the dummy metal circuit board 4 is different from the outer peripheral position of the metal circuit board 3, the ceramic substrate 1 generated by the stress generated between the ceramic substrate 1 and the metal circuit board 3 is formed. Is different from the crack generation position of the ceramic substrate 1 caused by the stress generated between the ceramic substrate 1 and the dummy metal circuit board 4. As a result, it is effective that the ceramic substrate 1 is cracked. And the reliability of the mechanical strength of the ceramic circuit board can be increased.
【0024】また同時にダミー金属回路板4の外周位置
を金属回路板3の外周位置より外側とするとともにその
位置を金属回路板3の外周位置より0.1mm以上、セ
ラミック基板1の厚み分以内としたことからセラミック
回路基板に熱が作用したとしてもセラミック回路基板に
大きな反りが生じることはなく、同時に半導体素子等の
電子部品が作動時に発する熱はセラミック基板1の上面
から下面に向かって45°の角度に広がっていくが、こ
の広がった熱をダミー金属回路板4が効率よく吸収する
とともに外部に良好に放出し、電子部品の冷却効果を良
として電子部品を安定に作動させることができる。At the same time, the outer peripheral position of the dummy metal circuit board 4 is set outside the outer peripheral position of the metal circuit board 3, and the position is set at 0.1 mm or more from the outer peripheral position of the metal circuit board 3 and within the thickness of the ceramic substrate 1. Therefore, even if heat acts on the ceramic circuit board, the ceramic circuit board does not warp greatly, and at the same time, the heat generated when the electronic components such as the semiconductor elements operate at 45 ° from the upper surface to the lower surface of the ceramic substrate 1 The dummy metal circuit board 4 efficiently absorbs the spread heat and satisfactorily emits the heat to the outside, so that the cooling effect of the electronic component is improved and the electronic component can be operated stably.
【0025】なお、前記ダミー金属回路板4はその外周
位置が前記金属回路板3の外周位置よりも内側に位置す
る、或は外側に位置するとしても金属回路板3の外周位
置より0.1mm未満外側であった場合、ダミー金属回
路板4は電子部品の作動時に発する熱を効率よく吸収す
るとともに外部に良好に放出することができなくなって
しまう。また前記ダミー金属回路板4はその外周位置が
前記金属回路板3の外周位置に対し、セラミック基板1
の厚み分をこえるような外側に位置する場合、セラミッ
ク基板1とダミー金属回路板4との間に発生する応力が
セラミック基板1と金属回路板3との間に発生する応力
に対し大きなものとなってセラミック回路基板に反りが
発生してしまう。従って、前記ダミー金属回路板4はそ
の外周位置が前記金属回路板3の外周位置よりも外側に
位置し、かつその位置がダミー金属回路板4の外周位置
をX、金属回路板3の外周位置をY、セラミック基板1
の厚みをZとしたとき、Y+0.1(mm)≦X≦Y+
Zの範囲に特定される。The dummy metal circuit board 4 is located 0.1 mm from the outer peripheral position of the metal circuit board 3 even if its outer peripheral position is located inside or outside the outer peripheral position of the metal circuit board 3. If it is less than the outside, the dummy metal circuit board 4 cannot efficiently absorb the heat generated at the time of operation of the electronic component and can not satisfactorily release the heat to the outside. The outer peripheral position of the dummy metal circuit board 4 is different from the outer peripheral position of the metal circuit board 3
Is located outside the thickness of the ceramic substrate 1 and the dummy metal circuit board 4, the stress generated between the ceramic substrate 1 and the metal circuit board 3 is larger than the stress generated between the ceramic substrate 1 and the metal circuit board 3. As a result, the ceramic circuit board is warped. Accordingly, the outer peripheral position of the dummy metal circuit board 4 is located outside the outer peripheral position of the metal circuit board 3, and the outer peripheral position of the dummy metal circuit board 4 is X, and the outer peripheral position of the metal circuit board 3 is X. Is Y, ceramic substrate 1
Is the thickness of Z, Y + 0.1 (mm) ≦ X ≦ Y +
It is specified in the range of Z.
【0026】なお、前記金属回路板3及びダミー金属回
路板4は銅から成る場合、金属回路板3及びダミー金属
回路板4を無酸素銅で形成しておくと、該無酸素銅はロ
ウ付けの際に銅の表面が銅中に存在する酸素により酸化
されることなくロウ材5との濡れ性が良好となり、メタ
ライズ金属層2へのロウ材5を介しての接合が強固とな
る。従って、前記金属回路板3及びダミー金属回路板4
はこれを無酸素銅で形成しておくことが好ましい。When the metal circuit board 3 and the dummy metal circuit board 4 are made of copper, if the metal circuit board 3 and the dummy metal circuit board 4 are formed of oxygen-free copper, the oxygen-free copper is brazed. In this case, the copper surface is not oxidized by the oxygen present in the copper, so that the wettability with the brazing material 5 is improved, and the bonding to the metallized metal layer 2 via the brazing material 5 is strengthened. Therefore, the metal circuit board 3 and the dummy metal circuit board 4
Is preferably formed from oxygen-free copper.
【0027】また前記金属回路板3及びダミー金属回路
板4はその表面にニッケルから成る良導電性で、かつ耐
蝕性及びロウ材との濡れ性が良好な金属をメッキ法によ
り被着させておくと、金属回路板3及びダミー金属回路
板4と外部電気回路との電気的接続を良好と成すととも
に金属回路板3に半導体素子等の電子部品を半田を介し
て強固に接着させることができる。従って、前記金属回
路板3及びダミー金属回路板4はその表面にニッケルか
ら成る良導電性で、かつ耐蝕性及びロウ材との濡れ性が
良好な金属をメッキ法により被着させておくことが好ま
しい。The metal circuit board 3 and the dummy metal circuit board 4 are coated on their surfaces with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material by plating. Thus, the electrical connection between the metal circuit board 3 and the dummy metal circuit board 4 and the external electric circuit is good, and the electronic components such as semiconductor elements can be firmly adhered to the metal circuit board 3 via solder. Therefore, the metal circuit board 3 and the dummy metal circuit board 4 may be coated with a metal made of nickel and having good conductivity, good corrosion resistance and good wettability with the brazing material by plating. preferable.
【0028】更に前記金属回路板3及びダミー金属回路
板4の表面にニッケルから成るメッキ層を被着させる場
合、内部に燐を8〜15重量%含有させてニッケル−燐
のアモルファス合金としておくとニッケルから成るメッ
キ層の表面酸化を良好に防止してロウ材との濡れ性等を
長く維持することができる。従って、前記金属回路板3
及びダミー金属回路板4の表面にニッケルから成るメッ
キ層を被着させる場合、内部に燐を8〜15重量%含有
させてニッケル−燐のアモルファス合金としておくこと
が好ましい。Further, when a plating layer made of nickel is applied to the surfaces of the metal circuit board 3 and the dummy metal circuit board 4, 8 to 15% by weight of phosphorus is contained therein to form a nickel-phosphorus amorphous alloy. Oxidation of the surface of the plating layer made of nickel can be prevented well, and the wettability with the brazing material can be maintained for a long time. Therefore, the metal circuit board 3
When a plating layer made of nickel is applied to the surface of the dummy metal circuit board 4, it is preferable to contain 8 to 15% by weight of phosphorus therein to form a nickel-phosphorus amorphous alloy.
【0029】また更に前記金属回路板3の表面にニッケ
ル−燐のアモルファス合金からなるメッキ層を被着させ
る場合、ニッケルに対する燐の含有量が8重量%未満、
あるいは15重量%を超えたときニッケル−燐のアモル
ファス合金を形成するのが困難となってメッキ層に半田
を強固に接着させることができなくなる危険性がある。
従って、前記金属回路板3の表面にニッケル−燐のアモ
ルファス合金からなるメッキ層を被着させる場合にはニ
ッケルに対する燐の含有量を8〜15重量%の範囲とし
ておくことが好ましく、好適には10〜15重量%の範
囲がよい。When a plating layer made of a nickel-phosphorus amorphous alloy is applied to the surface of the metal circuit board 3, the content of phosphorus with respect to nickel is less than 8% by weight.
Alternatively, when the content exceeds 15% by weight, it is difficult to form an amorphous alloy of nickel-phosphorus, and there is a risk that the solder cannot be firmly bonded to the plating layer.
Therefore, when a plating layer made of an amorphous alloy of nickel and phosphorus is applied to the surface of the metal circuit board 3, the content of phosphorus with respect to nickel is preferably in the range of 8 to 15% by weight, and more preferably. The range of 10 to 15% by weight is good.
【0030】更にまた本発明は上述の実施例に限定され
るものではなく、本発明の趣旨を逸脱しない範囲であれ
ば種々の変更は可能であり、例えば、上述の実施例では
セラミック基板1がアルミニウム質焼結体で形成された
例を示したが、電子部品が多量の熱を発し、この熱を効
率良く除去したい場合にはセラミック基板1を熱伝導率
の高い窒化アルミニウム質焼結体や窒化珪素質焼結体で
形成すれば良く、金属回路板3に高速で電気信号を伝播
させたい場合にはセラミック基板1を誘電率の低いムラ
イト質焼結体で形成すれば良い。Furthermore, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Although an example in which the electronic component generates a large amount of heat and an efficient removal of this heat is described, the ceramic substrate 1 may be formed of an aluminum nitride sintered body having a high thermal conductivity or an aluminum nitride sintered body. The ceramic substrate 1 may be formed of a mullite sintered body having a low dielectric constant when an electric signal is to be propagated to the metal circuit board 3 at high speed.
【0031】さらに、上述の実施例ではセラミック基板
1の表面に予めメタライズ金属2を被着させておき、該
メタライズ金属層2に金属回路板3及びダミー金属回路
板4をロウ付けしてセラミック回路基板となしたが、こ
れをセラミック基板1の表面に、例えば、銀−銅共晶合
金にチタンもしくは水素化チタンを2〜5重量%添加し
た活性金属ロウ材を介して直接金属回路板3及びダミー
金属回路板4を取着させてセラミック回路基板を形成し
てもよい。Further, in the above-described embodiment, a metallized metal 2 is previously adhered to the surface of the ceramic substrate 1, and a metal circuit board 3 and a dummy metal circuit board 4 are brazed to the metallized metal layer 2 to form a ceramic circuit. The metal circuit board 3 was directly formed on the surface of the ceramic substrate 1 via an active metal brazing material obtained by adding titanium or titanium hydride to a silver-copper eutectic alloy in an amount of 2 to 5% by weight. The ceramic circuit board may be formed by attaching the dummy metal circuit board 4.
【0032】[0032]
【発明の効果】本発明のセラミック回路基板によれば、
上面に金属回路板が取着されているセラミック基板の下
面に前記金属回路板と対応するダミー金属回路板を対称
に取着したことからセラミック基板と金属回路板との間
およびセラミック基板とダミー金属回路板との間に、熱
膨張係数の相違に起因する応力が生じ、反りが発生しよ
うとするがその反りの発生方向は互いに異なるために相
殺され、その結果、セラミック基板に反りが発生するこ
とはなく平坦となり、セラミック回路基板に半導体素子
等の電子部品を確実、強固に実装することが可能とな
る。According to the ceramic circuit board of the present invention,
Since the metal circuit board and the corresponding dummy metal circuit board are symmetrically mounted on the lower surface of the ceramic substrate having the metal circuit board mounted on the upper surface, the space between the ceramic substrate and the metal circuit board and between the ceramic substrate and the dummy metal Stress due to the difference in the coefficient of thermal expansion between the circuit board and the board causes warping, but the directions of the warping are different from each other, which offset each other, resulting in warping of the ceramic substrate. This makes it possible to securely and firmly mount electronic components such as semiconductor elements on the ceramic circuit board.
【0033】また本発明のセラミック回路基板によれ
ば、金属回路板の外周位置とダミー金属回路板の外周位
置とを異ならせたことからセラミック基板と金属回路板
との間に発生する応力によって生じるセラミック基板の
クラック発生位置と、セラミック基板とダミー金属回路
板との間に発生する応力によって生じるセラミック基板
のクラック発生位置とが異なり,その結果、セラミック
基板の割れ等が有効に防止され、セラミック回路基板と
しての機械的強度の信頼性を高いものとなすことができ
る。Further, according to the ceramic circuit board of the present invention, since the outer peripheral position of the metal circuit board and the outer peripheral position of the dummy metal circuit board are different, it is caused by the stress generated between the ceramic substrate and the metal circuit board. The crack generation position on the ceramic substrate is different from the crack generation position on the ceramic substrate caused by the stress generated between the ceramic substrate and the dummy metal circuit board.As a result, the ceramic substrate is effectively prevented from cracking, etc. The reliability of mechanical strength as a substrate can be made high.
【0034】更に本発明のセラミック回路基板によれ
ば、ダミー金属回路板の外周位置を金属回路板の外周位
置より外側とするとともにその位置を金属回路板の外周
位置より0.1mm以上、セラミック基板の厚み分以内
としたことからセラミック回路基板に熱が作用したとし
てもセラミック回路基板に大きな反りが生じることはな
く、同時に半導体素子等の電子部品が作動時に発する熱
をダミー金属回路板がセラミック基板を介して効率よく
吸収するとともに外部に良好に放出し、電子部品の冷却
効果を良として電子部品を安定に作動させることができ
る。Further, according to the ceramic circuit board of the present invention, the outer peripheral position of the dummy metal circuit board is set outside the outer peripheral position of the metal circuit board, and the position is 0.1 mm or more from the outer peripheral position of the metal circuit board. Even when heat acts on the ceramic circuit board, the ceramic circuit board does not warp significantly, and at the same time, the dummy metal circuit board generates heat generated when electronic components such as semiconductor elements are operated. , And is efficiently released to the outside, and the cooling effect of the electronic component is improved, so that the electronic component can be operated stably.
【図1】本発明のセラミック回路基板の一実施例を示す
断面図である。FIG. 1 is a sectional view showing one embodiment of a ceramic circuit board of the present invention.
1・・・・セラミック基板 2・・・・メタライズ金属層 3・・・・金属回路板 4・・・・ダミー金属回路板 1 ceramic substrate 2 metallized metal layer 3 metal circuit board 4 dummy metal circuit board
Claims (1)
して成るセラミック回路基板であって、前記セラミック
基板の下面に前記金属回路板と対応するダミー金属回路
板を取着するとともに、該ダミー金属回路板の外周位置
を前記金属回路板よりも外側に位置させ、かつその位置
がダミー金属回路板の外周位置をX、前記金属回路板の
外周位置をY、セラミック基板の厚みをZとしたとき、
Y+0.1(mm)≦X≦Y+Zであることを特徴とす
るセラミック回路基板。A ceramic circuit board having a metal circuit board attached to an upper surface of a ceramic substrate, wherein a dummy metal circuit board corresponding to the metal circuit board is attached to a lower surface of the ceramic substrate; The outer peripheral position of the dummy metal circuit board is located outside the metal circuit board, and the position is X, the outer peripheral position of the dummy metal circuit board is Y, the outer peripheral position of the metal circuit board is Y, and the thickness of the ceramic substrate is Z. When
A ceramic circuit board, wherein Y + 0.1 (mm) ≦ X ≦ Y + Z.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35631699A JP2001177194A (en) | 1999-12-15 | 1999-12-15 | Ceramic circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35631699A JP2001177194A (en) | 1999-12-15 | 1999-12-15 | Ceramic circuit board |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001177194A true JP2001177194A (en) | 2001-06-29 |
Family
ID=18448434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35631699A Pending JP2001177194A (en) | 1999-12-15 | 1999-12-15 | Ceramic circuit board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001177194A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100988585B1 (en) | 2006-09-29 | 2010-10-18 | 후지쯔 가부시끼가이샤 | Printed wiring board reliably achieving electric connection with electronic component |
JP2017069275A (en) * | 2015-09-28 | 2017-04-06 | 三菱マテリアル株式会社 | Substrate for power module with radiator plate, and power module |
-
1999
- 1999-12-15 JP JP35631699A patent/JP2001177194A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100988585B1 (en) | 2006-09-29 | 2010-10-18 | 후지쯔 가부시끼가이샤 | Printed wiring board reliably achieving electric connection with electronic component |
JP2017069275A (en) * | 2015-09-28 | 2017-04-06 | 三菱マテリアル株式会社 | Substrate for power module with radiator plate, and power module |
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