JP2003324167A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JP2003324167A JP2003324167A JP2002222745A JP2002222745A JP2003324167A JP 2003324167 A JP2003324167 A JP 2003324167A JP 2002222745 A JP2002222745 A JP 2002222745A JP 2002222745 A JP2002222745 A JP 2002222745A JP 2003324167 A JP2003324167 A JP 2003324167A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- metal
- metal plate
- ceramic
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電力用半導体素子
が搭載されるとともに、外部接続基板への強固で伝熱性
の良好な表面実装を可能とするセラミック回路基板に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board on which a power semiconductor element is mounted and which can be surface-mounted on an external connection board with good heat transfer properties.
【0002】[0002]
【従来の技術】従来、IGBT(Insulated Gate Bipol
ar Transistor)やMOS−FET(Metal Oxide Semic
onductor - Field Effect Transistor)等のパワー(電
力用)半導体素子の搭載用基板として、セラミック基板
上に被着させたメタライズ金属層に銀−銅合金等のロウ
材を介して銅等から成る金属回路板を接合させたセラミ
ック回路基板、あるいはセラミック基板上に銀−銅合金
にチタン・ジルコニウム・ハフニウムまたはその水素化
合物を添加した活性金属ロウ材を介して銅等から成る金
属回路板を直接接合させたセラミック回路基板が用いら
れている。2. Description of the Related Art Conventionally, IGBT (Insulated Gate Bipol)
ar Transistor) and MOS-FET (Metal Oxide Semic)
onductor-A metal circuit made of copper or the like via a brazing material such as a silver-copper alloy on a metallized metal layer deposited on a ceramic substrate as a substrate for mounting a power semiconductor element such as a field effect transistor. A ceramic circuit board bonded to a plate or a metal circuit board made of copper or the like was directly bonded onto the ceramic substrate through an active metal brazing material containing titanium-zirconium-hafnium or its hydrogen compound added to a silver-copper alloy. A ceramic circuit board is used.
【0003】さらに、このセラミック回路基板におい
て、高密度実装が要求される場合には、金属回路板と対
向する他方主面に金属板を配置し、これら金属回路板と
金属板とをセラミック基板内に設けた貫通導体により電
気的に接続してこの金属板を外部接続端子とする構造と
し、実装面積を縮小したセラミック回路基板が用いられ
ている。この貫通導体には、セラミック基板に形成され
た貫通孔に金属ペーストを充填して焼結したものや、セ
ラミック基板に形成された貫通孔に銅等から成る金属柱
を配置し、その両端を金属回路板および金属板とロウ材
により接合したもの等がある。Further, when high density mounting is required in this ceramic circuit board, a metal plate is arranged on the other main surface facing the metal circuit board, and the metal circuit board and the metal plate are placed in the ceramic board. There is used a ceramic circuit board which has a structure in which the metal plate is electrically connected by a penetrating conductor provided on the external connection terminal and is used as an external connection terminal, and the mounting area is reduced. In this through conductor, a through hole formed in a ceramic substrate is filled with a metal paste and sintered, or a metal pillar made of copper or the like is placed in the through hole formed in the ceramic substrate, and both ends of the through conductor are made of metal. For example, a circuit board, a metal plate and a brazing material may be joined together.
【0004】なお、これらセラミック回路基板、例えば
セラミック基板上に活性金属ロウ材を介して銅等から成
る金属回路板を直接接合させたセラミック回路基板は、
一般に酸化アルミニウム質焼結体・窒化アルミニウム質
焼結体・窒化珪素質焼結体・ムライト質焼結体等の電気
絶縁性のセラミックス材料から成り、厚み方向に貫通す
る貫通孔を設けたセラミック基板を準備し、次にこのセ
ラミック基板の貫通孔内に金属柱を配置し、銀ロウ粉末
(銀と銅との合金粉末)に有機溶剤や溶媒を添加混合し
て得たロウ材ペーストを金属柱の両面に塗布するととも
に、セラミック基板上に間に銀−銅合金にチタン・ジル
コニウム・ハフニウムまたはこれらの水素化物の少なく
とも1種を添加した活性金属ロウ等のロウ材を挟んで所
定パターンの金属回路板を載置当接させ、しかる後、こ
れを還元雰囲気中にて約900℃の温度に加熱し、ロウ材
ペーストおよびロウ材を溶融させて、メタライズ金属層
と金属回路板とを活性金属ロウ材を介して、および金属
回路板と金属柱とを銀ロウ等のロウ材を介して接合する
ことによって製作される。Incidentally, these ceramic circuit boards, for example, a ceramic circuit board in which a metal circuit board made of copper or the like is directly bonded onto the ceramic board via an active metal brazing material,
Generally, a ceramic substrate made of an electrically insulating ceramic material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, and a mullite sintered body, and provided with through holes penetrating in the thickness direction. Then, a metal column is placed in the through hole of this ceramic substrate, and an organic solvent or a solvent is added to and mixed with silver brazing powder (alloy powder of silver and copper) to obtain a brazing material paste. A metal circuit having a predetermined pattern, which is applied on both sides of the metal plate, and a brazing material such as an active metal brazing material in which at least one of titanium, zirconium, hafnium or a hydride of these is added to a silver-copper alloy is sandwiched between ceramic substrates. The plate is placed on and brought into contact with the plate, and then heated in a reducing atmosphere to a temperature of about 900 ° C. to melt the brazing material paste and the brazing material to activate the metallized metal layer and the metal circuit board. Via the metal brazing material, and a metal circuit plate and the metal columns are manufactured by joining via the brazing material such as silver solder.
【0005】また、このようなセラミック回路基板は、
IGBTやMOS−FET等のパワー半導体素子を搭載
した後、プリント基板等の外部接続基板へ接続されて使
用される。プリント基板等の外部接続基板への金属板の
接合は、まずプリント基板等の外部接続基板上に半田粉
末に有機溶剤・溶媒を添加混合して形成した半田ペース
トを従来周知のスクリーン印刷法の印刷技術を用いるこ
とによって所定パターンに印刷添付し、次にこの印刷塗
布した半田ペースト上にセラミック回路基板を載置当接
させ、しかる後、これを所定温度(約180℃)に加熱
し、半田ペーストの有機溶剤、溶媒等を輝散させるとと
もに半田を溶融させ、溶融した半田により金属板とプリ
ント基板とを接合させることによって行なわれている。Further, such a ceramic circuit board is
After mounting a power semiconductor element such as an IGBT or a MOS-FET, it is used by being connected to an external connection board such as a printed board. To join a metal plate to an external connection board such as a printed circuit board, first, a solder paste formed by adding an organic solvent / solvent to a solder powder on the external connection board such as a printed circuit board is printed by a conventionally known screen printing method. By using technology, it is printed and attached to a predetermined pattern, then the ceramic circuit board is placed and abutted on this print-applied solder paste, and then this is heated to a predetermined temperature (about 180 ° C) and the solder paste is applied. The organic solvent, the solvent, etc. are diffused and the solder is melted, and the metal plate and the printed board are joined by the melted solder.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、この従
来のセラミック回路基板においては、半田等の接着剤を
介してプリント基板等の外部接続基板と金属板とを接合
させる際に、半田が金属板の表面に大きく融け広がって
厚みが50μm未満の薄いものとなり、その結果、金属板
を外部接続基板に強固に被着させるのが困難となってし
まい、半導体素子のON−OFFのスイッチング動作に
よる熱が作用した場合に、金属板と外部接続基板との間
に両者の熱膨張係数の相違(例えば、アルミナ:7×10
-6/℃、プリント基板:17×10-6/℃)に起因する大き
な熱応力が発生し、この熱応力によって金属板が外部接
続基板より剥離してしまうこととなるという欠点を有し
ていた。However, in this conventional ceramic circuit board, when an external connection board such as a printed board is joined to a metal plate via an adhesive such as solder, the solder is a metal plate. It will melt to a large extent on the surface and become thin with a thickness of less than 50 μm. As a result, it will be difficult to firmly attach the metal plate to the external connection substrate, and the heat generated by the ON / OFF switching operation of the semiconductor element will be generated. When operating, the difference in thermal expansion coefficient between the metal plate and the external connection substrate (for example, alumina: 7 × 10
-6 / ° C, printed circuit board: 17 × 10 -6 / ° C) causes a large thermal stress, and this thermal stress causes the metal plate to peel off from the external connection board. It was
【0007】これに対して、接着剤としての半田の厚み
を予め厚く(例えば250μm程度)しておき、金属板と
外部接続基板との間に介在する半田の量を適量として外
部接続基板に対する金属板の接合強度を強いものとする
ことが考えられる。On the other hand, the thickness of the solder as the adhesive is made thick beforehand (for example, about 250 μm), and the amount of the solder interposed between the metal plate and the external connection board is set to an appropriate amount to the metal for the external connection board. It is conceivable to increase the bonding strength of the plates.
【0008】しかしながら、接着剤としての半田の厚み
を厚くしておくと、半田を溶融させて金属板を外部接続
基板に接合する際に、溶けた半田が金属板上からセラミ
ック基板上に流れ出て隣接する金属板間を短絡させた
り、金属板と外部接続基板との間に熱伝導率の低い半田
から成る接着剤が厚く介在し、半導体素子の作動時に発
生する熱を金属板から外部接続基板に効率良く伝達させ
ることができず、半導体素子を高温として半導体素子に
熱破壊や特性に熱劣化を招来させてしまったりするとい
う欠点を有していた。However, if the thickness of the solder as the adhesive is increased, the melted solder flows out from the metal plate onto the ceramic substrate when the solder is melted and the metal plate is joined to the external connection substrate. Short-circuiting between adjacent metal plates or thick adhesive between the metal plates and the external connection board, which consists of solder with low thermal conductivity, causes the heat generated during the operation of semiconductor elements to be transferred from the metal plate to the external connection board. However, there is a drawback in that the semiconductor element cannot be efficiently transmitted to the semiconductor element, and the semiconductor element is heated to a high temperature, causing thermal breakdown in the semiconductor element and thermal deterioration in the characteristics.
【0009】また、セラミック回路基板の金属板および
プリント基板等の外部接続基板の表面が略平坦であるこ
とから、両者を半田を溶融をさせて接合させる際にセラ
ミック回路基板が外部接続基板の表面を滑って両者の位
置ずれが発生する危険性があり、セラミック回路基板の
外部接続基板への実装精度が低下しておそれがあるとい
う問題点も有していた。Further, since the surfaces of the metal plate of the ceramic circuit board and the external connection board such as the printed circuit board are substantially flat, the ceramic circuit board can be bonded to the surface of the external connection board by melting the solder and joining them. There is also a problem that there is a risk of slippage between the two and displacement of the two, which may reduce the mounting accuracy of the ceramic circuit board on the external connection board.
【0010】本発明は上記従来技術の欠点に鑑み案出さ
れたもので、その目的は、セラミック回路基板を外部接
続基板へ強固に接合させることができるとともに、半導
体素子を常に適温とし半導体素子を長期間にわたり正
常、かつ安定に作動させることができるセラミック回路
基板を提供することにある。The present invention has been devised in view of the above-mentioned drawbacks of the prior art. An object of the present invention is to firmly bond a ceramic circuit board to an external connection board and to keep the semiconductor element at an appropriate temperature. It is to provide a ceramic circuit board that can be operated normally and stably for a long period of time.
【0011】[0011]
【課題を解決するための手段】本発明のセラミック回路
基板は、セラミック基板の一方主面に金属回路板が、他
方主面に前記金属回路板と対向させて金属板が配置さ
れ、前記金属回路板と前記金属板とが前記セラミック基
板内に配置された貫通導体で接続されているとともに、
前記金属板の前記セラミック基板と反対側の主面の中央
部に頭部が平坦な凸部が形成されていることを特徴とす
るものである。In the ceramic circuit board of the present invention, a metal circuit board is arranged on one main surface of the ceramic board, and a metal plate is arranged on the other main surface so as to face the metal circuit board. While the plate and the metal plate are connected by a through conductor arranged in the ceramic substrate,
A convex portion having a flat head portion is formed in a central portion of a main surface of the metal plate opposite to the ceramic substrate.
【0012】また、本発明のセラミック回路基板は、上
記構成において、前記凸部の高さが50μm以上200μm
以下で、前記金属板の外周から前記凸部の外周までの距
離が100μm以上であり、かつ前記金属板の面積に対す
る前記凸部の頭部の面積の比率が40%以上であることを
特徴とするものである。In the ceramic circuit board of the present invention, in the above structure, the height of the convex portion is 50 μm or more and 200 μm or more.
In the following, the distance from the outer periphery of the metal plate to the outer periphery of the convex portion is 100 μm or more, and the ratio of the area of the head of the convex portion to the area of the metal plate is 40% or more, To do.
【0013】さらに、本発明のセラミック回路基板は、
上記構成において、前記凸部が複数であるとともに、隣
接して位置する前記凸部間の間隔が100μm以上である
ことを特徴とするものである。Further, the ceramic circuit board of the present invention is
In the above configuration, the plurality of convex portions are provided, and the interval between the adjacent convex portions is 100 μm or more.
【0014】本発明のセラミック回路基板によれば、プ
リント基板等の外部接続基板が接合される金属板の中央
部に頭部が平坦な凸部が形成されていることから、この
凸部が形成された金属板を外部接続基板に接着剤として
の半田を介して接合させた場合に、外部接続基板の上面
と凸部の側面と凸部の周囲の金属板の表面との間に空間
が形成されるとともにこの空間内および外部接続基板の
上面と凸部の頭部の表面との間に半田が充填され介在す
ることとなり、その結果、凸部を設けた金属板の外部接
続基板への半田を介しての接合が三次元的となって、セ
ラミック回路基板を外部接続基板に確実・強固に接合さ
せることができる。According to the ceramic circuit board of the present invention, since a convex portion having a flat head is formed in the central portion of a metal plate to which an external connection substrate such as a printed circuit board is joined, the convex portion is formed. When the bonded metal plate is bonded to the external connection board via solder as an adhesive, a space is formed between the upper surface of the external connection board, the side surface of the convex portion, and the surface of the metal plate around the convex portion. As a result, solder is filled and intervenes in this space and between the upper surface of the external connection board and the surface of the head of the convex portion, and as a result, the metal plate provided with the convex portion is soldered to the external connection board. The joining via the three-dimensional structure becomes three-dimensional, and the ceramic circuit board can be securely and firmly joined to the external connection board.
【0015】また、本発明のセラミック回路基板によれ
ば、上記構成において、凸部の高さを50μm以上200μ
m以下で、金属板の外周から凸部の外周までの距離を10
0μm以上であり、かつ金属板の面積に対する凸部の頭
部の面積の比率を40%以上としたときには、この凸部が
形成された金属板を外部接続基板に接着剤としての半田
を介して接合させた場合に、外部接続基板の上面と凸部
の側面と凸部の周囲の金属板の表面との間に十分な容積
の空間が形成されるとともにこの空間内および外部接続
基板の上面と凸部の頭部の表面との間に十分な量の半田
が充填され介在することとなり、その結果、凸部を設け
た金属板の外部接続基板への半田を介してより確実・強
固に接合させることができる。Further, according to the ceramic circuit board of the present invention, in the above structure, the height of the convex portion is 50 μm or more and 200 μm or more.
The distance from the outer circumference of the metal plate to the outer circumference of the protrusion is 10 m or less.
When it is 0 μm or more and the ratio of the area of the head of the convex portion to the area of the metal plate is 40% or more, the metal plate on which the convex portion is formed is connected to the external connection substrate through solder as an adhesive. When bonded, a space of sufficient volume is formed between the upper surface of the external connection board, the side surface of the convex portion, and the surface of the metal plate around the convex portion, and in the space and the upper surface of the external connection substrate. A sufficient amount of solder is filled and intervenes between the protrusion and the surface of the head, and as a result, the metal plate with the protrusion is soldered to the external connection board more securely and firmly. Can be made.
【0016】さらに、外部接続基板の上面と金属板の凸
部の頭部の表面とは十分な面積で当接し、凸部の頭部の
表面と外部接続基板の上面との間に介在する半田は、金
属板の表面に大きく融け広がって厚みが50μm未満の薄
いものとなるので、セラミック回路基板に搭載された半
導体素子の作動時に発生する熱はセラミック回路基板か
ら金属回路板・貫通導体および金属板を介して外部接続
基板に効率良く伝達されることとなり、その結果、半導
体素子を常に適温として、半導体素子を長期間にわたり
正常、かつ安定に作動させることが可能となる。Further, the upper surface of the external connection board and the surface of the head of the convex portion of the metal plate are in contact with each other with a sufficient area, and the solder interposed between the surface of the head of the convex portion and the upper surface of the external connection board. The heat generated when the semiconductor element mounted on the ceramic circuit board is activated by the metal circuit board / through conductor and metal It is efficiently transmitted to the external connection board through the plate, and as a result, it becomes possible to keep the semiconductor element always at an appropriate temperature and operate the semiconductor element normally and stably for a long period of time.
【0017】また、本発明のセラミック回路基板によれ
ば、上記構成において、凸部が複数で、隣接して位置す
る凸部間の間隔が100μm以上としたときには、この凸
部が形成された金属板を外部接続基板に接着剤としての
半田を介して接合させた場合に、隣接する凸部間で外部
接続基板の上面と金属板の表面との間に十分な容積の空
間が形成されるとともにこの空間内に半田が充填され、
この空間内に充填された半田がセラミック回路基板の金
属板およびプリント基板等の外部接続基板間に働く摩擦
を増加させることとなり、セラミック回路基板と外部接
続基板とを半田を溶融させて接合させる際にセラミック
回路基板が外部接続基板の表面を滑ることが抑制され、
その結果、両者の位置ずれが発生して、セラミック回路
基板の外部接続基板への実装精度が大きく低下してしま
うことがない。Further, according to the ceramic circuit board of the present invention, in the above structure, when the plurality of protrusions are provided and the interval between the adjacent protrusions is 100 μm or more, the metal having the protrusions is formed. When the board is joined to the external connection board via solder as an adhesive, a space of sufficient volume is formed between the upper surface of the external connection board and the surface of the metal plate between the adjacent convex portions. Solder is filled in this space,
The solder filled in this space increases friction that acts between the metal plate of the ceramic circuit board and the external connection board such as a printed circuit board. When the ceramic circuit board and the external connection board are melted and joined together, The ceramic circuit board is suppressed from sliding on the surface of the external connection board,
As a result, the positional displacement between the two does not occur, and the mounting accuracy of the ceramic circuit board on the external connection board does not drop significantly.
【0018】[0018]
【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。図1および図2は本発明のセラミック
回路基板の実施の形態の一例を示す断面図であり、1は
セラミック回路基板、2はセラミック基板、3は金属回
路板、4は金属板、4aは凸部、5は貫通導体、6は活
性金属ロウ材、7はロウ材、8は半田、9は半導体素
子、10はプリント基板等の外部接続基板、11は接着剤で
ある。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. 1 and 2 are cross-sectional views showing an example of an embodiment of a ceramic circuit board of the present invention. 1 is a ceramic circuit board, 2 is a ceramic board, 3 is a metal circuit board, 4 is a metal plate, and 4a is a convex. Reference numeral 5 is a penetrating conductor, 6 is an active metal brazing material, 7 is a brazing material, 8 is solder, 9 is a semiconductor element, 10 is an external connection board such as a printed board, and 11 is an adhesive.
【0019】セラミック基板2は略四角形状をなし、そ
の一方主面および他方主面にそれぞれ活性金属ロウ材6
を介して所定パターンの金属回路板3および金属板4が
取着されており、セラミック基板2に設けた厚み方向に
貫通する貫通孔内に金属柱から成る貫通導体5がその両
端面をロウ材7を介して金属回路板3および金属板4に
接合されて配置されている。ロウ材7を介して金属回路
板3および金属板4に接合された貫通導体5により、セ
ラミック基板2の上下両面に取着されている金属回路板
3と金属板4とは電気的に接続されている。The ceramic substrate 2 has a substantially quadrangular shape, and the active metal brazing material 6 is provided on one main surface and the other main surface thereof, respectively.
The metal circuit board 3 and the metal plate 4 having a predetermined pattern are attached via the through holes, and the through conductors 5 made of metal columns are provided in the through holes penetrating the ceramic substrate 2 in the thickness direction. It is arranged so as to be joined to the metal circuit board 3 and the metal plate 4 via 7. The metal circuit board 3 and the metal plate 4 attached to the upper and lower surfaces of the ceramic substrate 2 are electrically connected by the through conductors 5 joined to the metal circuit board 3 and the metal plate 4 via the brazing material 7. ing.
【0020】セラミック基板2は、酸化アルミニウム質
焼結体・ムライト質焼結体・窒化珪素質焼結体・窒化ア
ルミニウム質焼結体・炭化珪素質焼結体等の電気絶縁材
料で形成されている。例えば、酸化アルミニウム質焼結
体から成る場合であれば、酸化アルミニウム・酸化マグ
ネシウム・酸化イットリウム等の原料粉末に適当な有機
バインダ・可塑剤・溶剤を添加混合して泥漿状となすと
ともに、この泥漿物に従来周知のドクターブレード法や
カレンダーロール法を採用することによってセラミック
グリーンシート(セラミック生シート)を形成し、次に
このセラミックグリーンシートに適当な打ち抜き加工を
施して所定形状となすとともに、必要に応じて複数枚を
積層して成形体となし、しかる後、これを窒素雰囲気等
の非酸化性雰囲気中にて約1600℃の温度で焼成すること
によって製作される。The ceramic substrate 2 is formed of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, a silicon nitride sintered body, an aluminum nitride sintered body, and a silicon carbide sintered body. There is. For example, in the case of an aluminum oxide sintered body, a suitable organic binder, a plasticizer, and a solvent are added to and mixed with raw material powders of aluminum oxide, magnesium oxide, yttrium oxide, etc. to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by applying the well-known doctor blade method or calender roll method to the object, and then this ceramic green sheet is punched appropriately to form a predetermined shape, and necessary. According to the above, a plurality of sheets are laminated to form a molded body, and thereafter, this is manufactured by firing at a temperature of about 1600 ° C. in a non-oxidizing atmosphere such as a nitrogen atmosphere.
【0021】金属回路板3および金属板4は、銅もしく
はアルミニウムから成り、銅もしくはアルミニウムのイ
ンゴット(塊)に圧延加工法や打ち抜き加工法等の従来
周知の金属加工法を施すことによって、例えば500μm
の厚みで所定パターンに形成される。The metal circuit board 3 and the metal plate 4 are made of copper or aluminum. For example, a copper or aluminum ingot (lump) is subjected to a well-known metal working method such as a rolling working method or a punching working method to obtain, for example, 500 μm.
Is formed into a predetermined pattern.
【0022】金属回路板3および金属板4は、銅から成
る場合には、これを無酸素銅で形成しておくと、無酸素
銅は活性金属ロウ材6を介してセラミック基板2に取着
する際に銅の表面が銅中に存在する酸素により酸化され
ることなく活性金属ロウ材6との濡れ性が良好となるの
で、金属回路板3および金属板4のセラミック基板2へ
の活性金属ロウ材6を介しての取着接合が強固となる。
従って、金属回路板3および金属板4は、銅から成る場
合はこれを無酸素銅で形成しておくことが好ましい。When the metal circuit board 3 and the metal plate 4 are made of copper, if they are made of oxygen-free copper, the oxygen-free copper is attached to the ceramic substrate 2 via the active metal brazing material 6. Since the surface of the copper is not oxidized by oxygen existing in the copper and the wettability with the active metal brazing material 6 becomes good, the active metal of the metal circuit board 3 and the metal plate 4 on the ceramic substrate 2 is improved. The attachment and joining through the brazing material 6 becomes strong.
Therefore, when the metal circuit board 3 and the metal plate 4 are made of copper, it is preferable that they are made of oxygen-free copper.
【0023】また、金属板4はその中央部のセラミック
基板2と反対側の主面に頭部が平坦で凸部4aが形成さ
れており、この凸部4aの頭部が外部接続基板10の表面
の接続用導体(図示せず)が形成された接合部へ載置さ
れる。この凸部4aは、セラミック回路基板1を支持す
る機能を有するとともに、半導体素子9の作動時に発生
する熱を金属板4および貫通導体5を介して外部接続基
板10に伝達・拡散する機能を有し、かつ、外部接続基板
10とセラミック回路基板1とを電気的に導通させる。Further, the metal plate 4 has a flat head and a convex portion 4a formed on the main surface of the metal plate 4 opposite to the ceramic substrate 2, and the convex portion 4a has the head portion of the external connection substrate 10. The connection conductor (not shown) on the surface is placed on the joint portion where the conductor is formed. The convex portion 4a has a function of supporting the ceramic circuit board 1 and a function of transmitting / diffusing heat generated during the operation of the semiconductor element 9 to the external connection board 10 through the metal plate 4 and the through conductor 5. And external connection board
The 10 and the ceramic circuit board 1 are electrically connected.
【0024】さらに、凸部4aが形成された金属板4を
持つセラミック回路基板1を外部接続基板10に接着剤と
しての半田8を介して接合させた場合、外部接続基板10
の上面と凸部4aの側面と凸部4aの周囲の金属板4の
表面との間に適度な容積の空間が形成されるとともに、
この空間内および外部接続基板10の接合部の上面との間
に半田8が充填され介在することとなり、その結果、金
属板4に設けた凸部4aへの外部接続基板10の接合部と
の半田8を介しての接合が三次元的となって接合強度を
極めて強いものとすることができ、外部接続基板10の接
合部に凸部4aが形成された金属板4を持つセラミック
回路基板1を確実・強固に接合させることができる。Further, when the ceramic circuit board 1 having the metal plate 4 on which the convex portions 4a are formed is joined to the external connection board 10 via the solder 8 as an adhesive, the external connection board 10
A space having an appropriate volume is formed between the upper surface of the metal plate 4, the side surface of the convex portion 4a, and the surface of the metal plate 4 around the convex portion 4a.
The solder 8 is filled and intervenes in this space and between the upper surface of the joint portion of the external connection board 10 and, as a result, the joint portion of the external connection board 10 to the convex portion 4a provided on the metal plate 4 is formed. The bonding via the solder 8 can be made three-dimensional so that the bonding strength can be made extremely strong, and the ceramic circuit board 1 having the metal plate 4 in which the convex portion 4a is formed at the bonding portion of the external connection substrate 10 is formed. Can be joined securely and firmly.
【0025】また同時に、凸部4aが形成された金属板
4を外部接続基板10の接合部に接着剤としての半田8を
介して接合した場合に、外部接続基板10の接合部と凸部
4aとは適度な面積で当接して半導体素子9の作動時に
発生する熱を金属板4から外部接続基板10に効率良く伝
達させることができるものとなり、その結果、半導体素
子9を長期間にわたり正常、かつ安定に作動させること
が可能となる。At the same time, when the metal plate 4 on which the convex portion 4a is formed is joined to the joint portion of the external connection substrate 10 via the solder 8 as an adhesive, the joint portion of the external connection substrate 10 and the convex portion 4a are joined together. Means that the heat generated during the operation of the semiconductor element 9 can be efficiently transferred from the metal plate 4 to the external connection board 10 by contacting with each other in an appropriate area. As a result, the semiconductor element 9 can be normally operated for a long period of time, And it becomes possible to operate stably.
【0026】金属板4の凸部4aは、金属板4を形成す
る際に同時に形成されるか、あるいは金属板4に研削加
工・プレス加工・エッチング加工等を施すことによって
金属板4の主面の所定位置に所定形状に形成される。The convex portions 4a of the metal plate 4 are formed at the same time when the metal plate 4 is formed, or the main surface of the metal plate 4 is formed by subjecting the metal plate 4 to grinding, pressing, etching or the like. Is formed in a predetermined shape at a predetermined position.
【0027】凸部4aは、凸部の高さが50μm以上200
μm以下で、金属板4の外周から凸部4aの外周までの
距離が100μm以上であり、かつ金属板4の面積に対す
る凸部4aの平坦な頭部の面積の比率が40%以上である
とよい。The convex portion 4a has a height of 50 μm or more and 200 or more.
If the distance from the outer periphery of the metal plate 4 to the outer periphery of the convex portion 4a is 100 μm or more, and the ratio of the area of the flat head of the convex portion 4a to the area of the metal plate 4 is 40% or more. Good.
【0028】凸部4aの高さが50μm未満となり、また
金属板4の外周から凸部4aの外周までの距離が100μ
m未満となると、セラミック回路基板1が実装される外
部接続基板10の接合部と凸部4aの側面と凸部4aの周
囲の金属板4の表面との間に形成される空間の容積が狭
くなって、外部接続基板10の接合部に金属板4を強固に
接合させることができなくなる傾向がある。また、凸部
4aの高さが200μmを超えると、外部接続基板10の接
合面と凸部4aの側面と凸部4aの周囲の金属板4の表
面との間に形成される空間の容積が大きくなり過ぎ、こ
の空間内に半田8を完全に充填させることができなくな
る傾向がある。The height of the convex portion 4a is less than 50 μm, and the distance from the outer periphery of the metal plate 4 to the outer periphery of the convex portion 4a is 100 μm.
When it is less than m, the volume of the space formed between the joint portion of the external connection substrate 10 on which the ceramic circuit board 1 is mounted, the side surface of the convex portion 4a, and the surface of the metal plate 4 around the convex portion 4a becomes narrow. Therefore, there is a tendency that the metal plate 4 cannot be firmly bonded to the bonding portion of the external connection board 10. When the height of the convex portion 4a exceeds 200 μm, the volume of the space formed between the bonding surface of the external connection board 10, the side surface of the convex portion 4a, and the surface of the metal plate 4 around the convex portion 4a becomes small. There is a tendency that it becomes too large and the solder 8 cannot be completely filled in this space.
【0029】また、金属板4の外周から凸部4aの外周
までの距離が100μm以上であっても、外部接続基板10
に接合される金属板4の凸部4aの平坦な頭部の面積が
金属板4の面積の40%未満となると、半導体素子9が発
生する熱を外部接続基板10へ効率よく伝達させることが
できなくなる傾向があり、半導体素子9が高温となって
半導体素子9に熱破壊や特性劣化を招来させてしまうこ
ととなるため、金属板4の面積に対する凸部4aの頭部
の面積の比率は40%以上とすることが好ましい。Even if the distance from the outer periphery of the metal plate 4 to the outer periphery of the convex portion 4a is 100 μm or more, the external connection board 10
When the area of the flat head portion of the convex portion 4a of the metal plate 4 joined to is less than 40% of the area of the metal plate 4, the heat generated by the semiconductor element 9 can be efficiently transferred to the external connection substrate 10. Since there is a tendency that the semiconductor element 9 becomes high in temperature and causes the semiconductor element 9 to be thermally destroyed or its characteristics deteriorate, the ratio of the area of the head of the convex portion 4 a to the area of the metal plate 4 is It is preferably 40% or more.
【0030】従って、凸部4aは、凸部4aの高さが50
μm以上200μm以下で、金属板4の外周から凸部4a
の外周までの距離が100μm以上であり、かつ金属板4
の面積に対する凸部4aの頭部の面積の比率が40%以上
であることが好ましい。Therefore, the height of the convex portion 4a is 50%.
From the outer periphery of the metal plate 4 to the convex portion 4a in the range from μm to 200 μm
The distance to the outer periphery of the metal plate is 100 μm or more, and the metal plate 4
It is preferable that the ratio of the area of the head of the convex portion 4a to the area of is 40% or more.
【0031】また、図2にセラミック回路基板の断面図
に示すように、凸部4aを複数とし、隣接して位置する
凸部4a間の間隔を100μm以上としたときには、この
凸部4aが形成された金属板4を外部接続基板10に接着
剤としての半田8を介して接合させた場合に、隣接する
凸部4a間で外部接続基板10の上面と金属板4の表面と
の間に十分な容積の空間が形成されるとともにこの空間
内に半田8が充填され、この空間内に充填された半田8
がセラミック回路基板1の金属板4およびプリント基板
等の外部接続基板10間に働く摩擦を増加させることか
ら、セラミック回路基板1と外部接続基板10とを半田8
を溶融させて接合させる際にセラミック回路基板1が外
部接続基板10の表面を滑ることが抑制され、その結果、
両者の位置ずれが発生して、セラミック回路基板1の外
部接続基板10への実装精度が低下してしまうことがな
い。As shown in the sectional view of the ceramic circuit board in FIG. 2, when a plurality of convex portions 4a are provided and the distance between the adjacent convex portions 4a is 100 μm or more, the convex portions 4a are formed. When the formed metal plate 4 is joined to the external connection board 10 via the solder 8 as an adhesive, the space between the upper surface of the external connection board 10 and the surface of the metal plate 4 is sufficient between the adjacent convex portions 4a. A space having a large volume is formed and the solder 8 is filled in the space, and the solder 8 filled in the space
Increases the friction acting between the metal plate 4 of the ceramic circuit board 1 and the external connection board 10 such as a printed circuit board, so that the ceramic circuit board 1 and the external connection board 10 are soldered to each other.
It is suppressed that the ceramic circuit board 1 slides on the surface of the external connection board 10 when melting and joining the
There is no possibility that the displacement of the two will occur and the mounting accuracy of the ceramic circuit board 1 on the external connection board 10 will not deteriorate.
【0032】なお、隣接して位置する凸部4a間の間隔
が100μm未満の場合、隣接する凸部4a間の外部接続
基板10の上面と金属板4の表面との間に十分な容積の空
間が形成されなくなって、この空間内に溶融した半田が
充填されにくくなる傾向がある。従って、本発明のセラ
ミック回路基板1においては、凸部4aを複数とし、隣
接して位置する凸部4a間の間隔を100μm以上とする
ことが好ましい。When the distance between the adjacent convex portions 4a is less than 100 μm, a space having a sufficient volume is provided between the upper surface of the external connection substrate 10 and the surface of the metal plate 4 between the adjacent convex portions 4a. Is not formed, and the molten solder tends to be difficult to fill in this space. Therefore, in the ceramic circuit board 1 of the present invention, it is preferable that the convex portions 4a are plural and the interval between the adjacent convex portions 4a is 100 μm or more.
【0033】活性金属ロウ材6は、金属回路板3および
金属板4が銅から成る場合であれば、銀−銅共晶合金に
チタン・ジルコニウム・ハフニウム等の金属もしくはそ
の水素化物を2〜5重量%添加させたものが用いられ
る。また、金属回路板3および金属板4がアルミニウム
から成る場合であれば、アルミニウム−シリコン共晶合
金にチタン・ジルコニウム・ハフニウム等の金属もしく
はその水素化物を2〜5重量%添加させたものが用いら
れる。When the metal circuit plate 3 and the metal plate 4 are made of copper, the active metal brazing material 6 contains a silver-copper eutectic alloy with a metal such as titanium, zirconium or hafnium or a hydride thereof in an amount of 2-5. What was added by weight% is used. When the metal circuit board 3 and the metal plate 4 are made of aluminum, an aluminum-silicon eutectic alloy to which a metal such as titanium, zirconium, or hafnium or a hydride thereof is added in an amount of 2 to 5% by weight is used. To be
【0034】金属柱から成る貫通導体5は、比抵抗が3
μΩ・cm以下と非常に小さい良導電性の銅(1.72μΩ
・cm)もしくはアルミニウム(2.65μΩ・cm)等に
より形成しておくと、貫通導体5に大きな電流が流れた
としても金属回路板3・金属板4・貫通導体5およびそ
の接続部分からジュール熱による大量の熱が発生するこ
とがなく、その結果、金属回路板3上に半田等の接着剤
11を用いて接着固定される半導体素子9等の電子部品を
常に適温として、長期間にわたって正常かつ安定に作動
させることが可能となる。The through conductor 5 made of a metal pillar has a specific resistance of 3
Very low conductive copper (1.72μΩ)
.Cm) or aluminum (2.65 μΩ · cm) or the like, even if a large current flows through the through-conductor 5, the Joule heat is generated from the metal circuit board 3, the metal plate 4, the through-conductor 5 and the connecting portion. A large amount of heat is not generated, and as a result, an adhesive such as solder is attached on the metal circuit board 3.
It is possible to keep the electronic components such as the semiconductor element 9 adhered and fixed using 11 always at an appropriate temperature and operate normally and stably for a long period of time.
【0035】また、貫通導体5となる金属柱は、銅から
成る場合にはこれを無酸素銅で形成しておくことが好ま
しい。これは、ロウ付けの際に金属回路板3および金属
板4の表面が金属柱の銅中に存在する酸素により酸化さ
れることがなく、ロウ材7との濡れ性が良好となり、金
属回路板3および金属板4へのロウ材7を介しての接合
が強固となるからである。When the metal pillar to be the through conductor 5 is made of copper, it is preferable that the metal pillar is made of oxygen-free copper. This is because the surfaces of the metal circuit board 3 and the metal plate 4 are not oxidized by oxygen existing in the copper of the metal column during brazing, and the wettability with the brazing material 7 is good, and the metal circuit board is This is because the bonding to the metal plate 3 and the metal plate 4 via the brazing material 7 becomes strong.
【0036】金属柱から成る貫通導体5の長さは、セラ
ミック基板2の厚みに対して0〜150μm短いものとす
ることが好ましい。貫通導体5がセラミック基板2の厚
みより長いと、貫通導体5がセラミック基板2のそれぞ
れの主面に取着された金属回路板3および金属板4を突
き上げてしまい、セラミック基板2と金属回路板3およ
び金属板4とが良好に接合されなくなってしまう傾向が
ある。また、貫通導体5がセラミック基板2の厚みに対
して150μmより短いと、貫通導体5の両端に多くのロ
ウ材7を被着させる必要があり、製造コストを増加させ
る要因になる他、ロウ材7を加熱溶融した際に貫通導体
5が上下に移動したり傾いたりして、貫通導体5と金属
回路板3および金属板4とを良好に接合することが困難
となる傾向がある。The length of the penetrating conductor 5 made of a metal pillar is preferably 0 to 150 μm shorter than the thickness of the ceramic substrate 2. If the through conductor 5 is longer than the thickness of the ceramic substrate 2, the through conductor 5 pushes up the metal circuit board 3 and the metal plate 4 attached to each main surface of the ceramic substrate 2, and the ceramic substrate 2 and the metal circuit board. 3 and the metal plate 4 tend not to be joined well. Further, if the through conductor 5 is shorter than 150 μm in thickness with respect to the thickness of the ceramic substrate 2, it is necessary to adhere a large amount of the brazing material 7 to both ends of the penetrating conductor 5, which causes an increase in manufacturing cost and also the brazing material. When the through conductor 5 is heated and melted, the penetrating conductor 5 may move up and down or tilt, and it may be difficult to satisfactorily bond the penetrating conductor 5 to the metal circuit board 3 and the metal plate 4.
【0037】貫通導体5と金属回路板3および金属板4
とを接合するロウ材7は、金属回路板3および金属板4
が銅から成る場合であれば銀−銅共晶合金から成る銀ロ
ウ材が、また金属回路板3および金属板4がアルミニウ
ムから成る場合であればアルミニウム−シリコン共晶合
金から成るアルミニウムロウ材が用いられる。ロウ材7
は貫通孔の内側に配置され、貫通導体5と金属回路板3
および金属板4とを接合するものであり、活性金属ロウ
材6とは区別されて配置されている。Through conductor 5, metal circuit board 3, and metal plate 4
The brazing material 7 for joining the
If the metal is made of copper, a silver brazing material made of a silver-copper eutectic alloy is used. If the metal circuit board 3 and the metal plate 4 are made of aluminum, an aluminum brazing material made of an aluminum-silicon eutectic alloy is used. Used. Brazing material 7
Is arranged inside the through hole, and the through conductor 5 and the metal circuit board 3 are
And the metal plate 4 are joined together, and they are arranged separately from the active metal brazing material 6.
【0038】また、ロウ材7は、貫通導体5の端部から
金属回路板3および金属板4にかけて広がってメニスカ
スを形成しているとよい。このようにロウ材7が広がっ
ていることにより、貫通導体5を通過する電流はロウ材
7に形成されたメニスカス中を滑らかに流れることとな
り、貫通導体5と金属回路板3および金属板4とのロウ
材7による接合部に電流の集中が発生しにくく、局所的
な発熱が少なくなるため、金属回路板3上に半田等の接
合材を用いて接着固定される半導体素子9等の電子部品
を常に適温として、長期間にわたって正常かつ安定に作
動させることが可能となる。The brazing material 7 is preferably spread from the end of the through conductor 5 to the metal circuit board 3 and the metal plate 4 to form a meniscus. Since the brazing material 7 spreads in this manner, the current passing through the through conductor 5 flows smoothly through the meniscus formed in the brazing material 7, and the through conductor 5 and the metal circuit board 3 and the metal plate 4 are connected to each other. An electric current is less likely to be concentrated on the joint portion of the brazing material 7 and local heat generation is reduced. Therefore, an electronic component such as a semiconductor element 9 which is adhesively fixed onto the metal circuit board 3 by using a joint material such as solder. Can always be operated at a proper temperature and can be operated normally and stably for a long period of time.
【0039】貫通孔の内壁面と貫通導体5の外壁面との
間の空間の厚み(両者の断面形状が円形の場合は、貫通
孔の半径と貫通導体5の半径との差に相当する)は、30
〜200μmの範囲としておくことが好ましい。これは、
この空間の厚みが30μm未満の場合は、セラミック回路
基板1に熱が加わった際に、セラミック基板2と貫通導
体5との熱膨張係数の差によって膨張した貫通導体5の
外壁面がセラミック基板2の貫通孔の内壁面を押し広げ
ようとするのをセラミック基板2の貫通孔の内壁面と貫
通導体5の外壁面との間にある空間で確実に吸収するこ
とが困難となり、貫通導体5の外壁面がセラミック基板
2の貫通孔の内壁面を押し広げてしまい、セラミック基
板2にクラックや割れを発生させてしまうことがあるた
めである。また、この空間の厚みが200μmを超えた場
合は、セラミック基板2の貫通孔にロウ材7付き貫通導
体5を挿着する際に、ロウ材7付き貫通導体5が傾いて
しまい、貫通導体5を金属回路板3および金属板4と確
実に接続できなくなることがあるためである。The thickness of the space between the inner wall surface of the through hole and the outer wall surface of the through conductor 5 (when the cross-sectional shape of both is circular, it corresponds to the difference between the radius of the through hole and the radius of the through conductor 5). Is 30
It is preferably set in the range of up to 200 μm. this is,
When the thickness of this space is less than 30 μm, when heat is applied to the ceramic circuit board 1, the outer wall surface of the through conductor 5 expanded due to the difference in thermal expansion coefficient between the ceramic substrate 2 and the through conductor 5 is the ceramic substrate 2 It becomes difficult for the space between the inner wall surface of the through hole of the ceramic substrate 2 and the outer wall surface of the through conductor 5 to reliably absorb the attempt to spread the inner wall surface of the through hole of 1. This is because the outer wall surface may spread the inner wall surface of the through hole of the ceramic substrate 2 and cause cracks or breaks in the ceramic substrate 2. When the thickness of this space exceeds 200 μm, when the through conductor 5 with the brazing material 7 is inserted into the through hole of the ceramic substrate 2, the through conductor 5 with the brazing material 7 is inclined, and the through conductor 5 This is because it may not be possible to reliably connect the metal circuit board 3 and the metal plate 4.
【0040】また、セラミック基板2と金属回路板3お
よび金属板4とを接合する活性金属ロウ材6は、貫通孔
の外周よりも100μm以上外側に配置することが望まし
い。これにより、貫通導体5の熱膨張とセラミック基板
2の熱膨張との差による熱応力がセラミック基板2の貫
通孔の周辺のマイクロクラックに作用してセラミック基
板2にクラックや割れを発生させることがなくなり、ま
た製造工程において活性金属ロウ材6が貫通孔内に垂れ
込んで、金属回路板3および金属板4と貫通導体5とを
接合するためのロウ材7と融合してロウ材の組成が変化
することがないので、金属回路板3および金属板4とセ
ラミック基板2ならびに金属回路板3および金属板4と
貫通導体5との接合が良好で、搭載される半導体素子9
等の電子部品を正常かつ安定に作動させることのできる
信頼性の高いセラミック回路基板1を得ることが可能と
なる。Further, it is desirable that the active metal brazing material 6 for joining the ceramic substrate 2 to the metal circuit board 3 and the metal plate 4 is arranged 100 μm or more outside the outer periphery of the through hole. As a result, thermal stress due to the difference between the thermal expansion of the through conductor 5 and the thermal expansion of the ceramic substrate 2 may act on the microcracks around the through holes of the ceramic substrate 2 to cause cracks or breaks in the ceramic substrate 2. In addition, the active metal brazing material 6 hangs down in the through hole in the manufacturing process and is fused with the brazing material 7 for joining the metal circuit board 3 and the metal plate 4 to the penetrating conductor 5 to form a brazing material composition. Since it does not change, the metal circuit board 3 and the metal plate 4 are bonded to the ceramic substrate 2, and the metal circuit board 3 and the metal plate 4 are bonded to the through conductor 5, and the mounted semiconductor element 9 is mounted.
It is possible to obtain a highly reliable ceramic circuit board 1 that can normally and stably operate electronic components such as.
【0041】貫通孔の内壁面と貫通導体5の外壁面との
間に空間を設けたり、セラミック基板2と金属回路板3
および金属板4とを接合する活性金属ロウ材6を貫通孔
の外周よりも100μm以上外側に配置したりすると、上
述した効果以外にも、ロウ材7に貫通導体5の端部から
金属回路板3および金属板4にかけて広がるような形状
のメニスカスを形成しやすくなるという効果がある。A space is provided between the inner wall surface of the through hole and the outer wall surface of the through conductor 5, or the ceramic substrate 2 and the metal circuit board 3 are provided.
When the active metal brazing material 6 that joins the metal plate 4 and the active metal brazing material 6 is arranged outside the outer periphery of the through hole by 100 μm or more, in addition to the above-described effects, the brazing material 7 is connected to the metal circuit board from the end of the through conductor 5. 3 has an effect that it becomes easy to form a meniscus having a shape that spreads over the metal plate 3 and the metal plate 4.
【0042】貫通孔を有するセラミック基板2への活性
金属ロウ材6を使用しての金属回路板3および金属板4
の取着は、以下のようにして行なうとよい。Metal circuit board 3 and metal plate 4 using active metal brazing material 6 on ceramic substrate 2 having through holes.
It is recommended that the attachment be performed as follows.
【0043】まず、活性金属ロウ材6は、例えば金属回
路板3および金属板4が銅から成る場合であれば、銀−
銅共晶合金にチタン・ジルコニウム・ハフニウム等の金
属もしくはその水素化物を2〜5重量%添加させたもの
に有機溶剤・溶媒を混合して活性金属ロウ材ペーストを
作製し、次にセラミック基板2の上下両面にこの活性金
属ロウ材ペーストを従来周知のスクリーン印刷法を採用
することによって約10〜40μmの厚みで所定パターンに
印刷塗布する。First, when the metal circuit board 3 and the metal plate 4 are made of copper, the active metal brazing material 6 is made of silver-, for example.
A metal eutectic alloy containing titanium, zirconium, hafnium, or a hydride thereof added in an amount of 2 to 5% by weight is mixed with an organic solvent or solvent to prepare an active metal brazing material paste, and then a ceramic substrate 2 This active metal brazing material paste is printed and applied in a predetermined pattern on the upper and lower surfaces of the same in a thickness of about 10 to 40 .mu.m by employing a conventionally known screen printing method.
【0044】次に、セラミック基板2の貫通孔内にロウ
材7付き貫通導体5を挿入配置するとともに、セラミッ
ク基板2の上下両面に印刷塗布されている活性金属ロウ
材ペースト上にそれぞれ金属回路板3および金属板4を
載置し、しかる後、これを真空中もしくは中性または還
元雰囲気中にて所定温度(銅の場合は約900℃)で加熱
処理し、活性金属ロウ材ペーストおよびロウ材7付き貫
通導体5の両端面に被着されたロウ材7を溶融せしめ、
溶融した活性金属ロウ材6でセラミック基板2と金属回
路板3および金属板4を、ロウ材7で金属回路板3およ
び金属板4と貫通導体5とを接合させる。Next, the through conductors 5 with the brazing material 7 are inserted and arranged in the through holes of the ceramic substrate 2, and metal circuit boards are respectively placed on the active metal brazing material paste printed and applied on both upper and lower surfaces of the ceramic substrate 2. 3 and the metal plate 4 are placed thereon, and then heat-treated at a predetermined temperature (about 900 ° C. in the case of copper) in vacuum or in a neutral or reducing atmosphere to obtain an active metal brazing paste and brazing material. The brazing material 7 adhered to both end surfaces of the through conductor 5 with 7 is melted,
The molten active metal brazing material 6 joins the ceramic substrate 2 to the metal circuit board 3 and the metal plate 4, and the brazing material 7 joins the metal circuit board 3 and the metal plate 4 to the through conductor 5.
【0045】上述した製造方法において、ロウ材7付き
貫通導体5は、セラミック基板2の厚みに対して0〜15
0μm短い金属柱から成る貫通導体5の両端にロウ材7
を被着して、セラミック基板2の厚みに対して40〜140
μm長くしたものがよい。これは、貫通導体5の長さが
セラミック基板2の厚みよりも0〜150μm短いと、前
述したように貫通導体5がセラミック基板2の上下に取
着された金属回路板3および金属板4を突き上げること
がなく、セラミック基板2とその両面の金属回路板3お
よび金属板4との良好な接合を損なうことがないからで
あり、また、ロウ材7付き貫通導体5の長さがセラミッ
ク基板2の厚みに対して40〜140μm長いと、その両端
のロウ材7が確実に上下の金属回路板3および金属板4
と接触し、その後の溶融工程で貫通導体5と金属回路板
3および金属板4とがロウ材7を介して確実に接合さ
れ、信頼性の高い電気的接続が得られるからである。In the above-described manufacturing method, the through conductor 5 with the brazing material 7 has a thickness of 0 to 15 relative to the thickness of the ceramic substrate 2.
A brazing material 7 is provided on both ends of the through conductor 5 composed of a metal pillar having a short length of 0 μm.
40 to 140 relative to the thickness of the ceramic substrate 2.
It is better to have a longer μm. This is because when the length of the through conductor 5 is shorter than the thickness of the ceramic substrate 2 by 0 to 150 μm, the through circuit conductor 5 has the metal circuit board 3 and the metal plate 4 attached to the upper and lower sides of the ceramic substrate 2 as described above. This is because the ceramic substrate 2 is not pushed up and the good bonding between the ceramic substrate 2 and the metal circuit boards 3 and the metal plates 4 on both sides thereof is not impaired. Further, the length of the through conductor 5 with the brazing material 7 is longer than that of the ceramic substrate 2. 40 to 140 μm longer than the thickness of the brazing material, the brazing material 7 on both ends of the metal wiring board 3 and the metal plate 4 are surely arranged.
This is because the through conductor 5 and the metal circuit board 3 and the metal plate 4 are reliably joined to each other through the brazing material 7 in the subsequent melting step, and highly reliable electrical connection is obtained.
【0046】ロウ材7付き貫通導体5は、例えば、銅も
しくはアルミニウムのインゴット(塊)に圧延加工法や
打ち抜き加工法・引き抜き加工法等の従来周知の金属加
工法を施すことによって円柱状に形成して金属柱を作製
し、その後、金属柱の上下両端面に、銅の場合には銀ロ
ウ材を、アルミニウムの場合にはアルミニウムロウ材を
被着させて作製される。また、他の方法としては、ロウ
材/銅板もしくはアルミニウム板/ロウ材の順で積層
し、圧延加工法によって所定の厚みにしたものに打ち抜
き加工法・引き抜き加工法等の金属加工法を施すことに
より作製する方法がある。The through conductor 5 with the brazing material 7 is formed in a cylindrical shape by subjecting a copper or aluminum ingot (lump) to a conventionally known metal working method such as a rolling method, a punching method or a drawing method. Then, the metal pillar is manufactured, and thereafter, the silver brazing material in the case of copper and the aluminum brazing material in the case of aluminum are applied to both upper and lower end surfaces of the metal pillar. As another method, laminating a brazing material / copper plate or an aluminum plate / brazing material in this order and applying a metal working method such as a punching method or a drawing method to a material having a predetermined thickness by a rolling method. There is a method of making.
【0047】このように製作された本発明のセラミック
回路基板1は、金属回路板3の上にIGBTやMOS−
FET等の半導体素子9等の電子部品を半田等の接着剤
11を介して実装した後、外部接続基板10へ半田8を介し
て金属板4が接合されて半導体モジュールとなる。The ceramic circuit board 1 of the present invention thus manufactured has an IGBT or a MOS-
Adhesive such as solder for electronic parts such as semiconductor element 9 such as FET
After mounting via 11, the metal plate 4 is joined to the external connection substrate 10 via the solder 8 to form a semiconductor module.
【0048】[0048]
【実施例】以下、実施例および比較例の試験結果を挙げ
て本発明のセラミック回路基板について詳細に説明する
が、本発明は以下の実施例のみに限定されるものではな
い。EXAMPLES The ceramic circuit boards of the present invention will be described in detail below with reference to the test results of Examples and Comparative Examples, but the present invention is not limited to the following Examples.
【0049】(実施例1)まず、打ち抜き加工により貫
通孔を形成したアルミナセラミックスのグリーンシート
を積層し、窒素雰囲気中にて約1600℃の温度で焼成する
ことにより、直径2mmの貫通孔が形成された、厚みが
0.635mmのアルミナ質焼結体のセラミック基板を得
た。このアルミナ基板の両面に、銀−銅共晶合金粉末に
水素化チタン粉末を3重量%添加させたものに有機溶剤
・溶媒を混合して作製した活性金属ロウ材ペーストをス
クリーン印刷にて塗布した。このときの活性金属ロウ材
ペーストのパターンと貫通孔の外周との距離は100μm
とした。(Example 1) First, green sheets of alumina ceramics having through holes formed by punching were laminated and fired at a temperature of about 1600 ° C in a nitrogen atmosphere to form through holes having a diameter of 2 mm. The thickness
A ceramic substrate of 0.635 mm alumina sintered body was obtained. On both surfaces of this alumina substrate, an active metal brazing material paste prepared by mixing 3 wt% of titanium hydride powder to silver-copper eutectic alloy powder with an organic solvent was applied by screen printing. . At this time, the distance between the pattern of the active metal brazing material paste and the outer periphery of the through hole is 100 μm.
And
【0050】次に、銀−銅共晶合金のロウ材が予め被着
された金属柱を貫通孔に挿入し、無酸素銅から成る厚さ
が0.3mmの予め回路パターン形状に打ち抜き加工され
た金属回路板および金属板を、貫通孔を塞ぐようにセラ
ミック基板を挟んで載置した。金属柱は、直径が1.8m
m、長さが0.635mm、ロウ材を含めた長さが0.685mm
のものを用いた。Next, a metal column to which a brazing material of a silver-copper eutectic alloy was applied in advance was inserted into the through hole and punched into a circuit pattern shape having a thickness of 0.3 mm and made of oxygen-free copper. The metal circuit board and the metal plate were placed with the ceramic substrate sandwiched so as to close the through holes. The diameter of the metal pillar is 1.8m
m, length is 0.635 mm, length including brazing material is 0.685 mm
I used the one.
【0051】最後に、真空中にて約900℃の温度に加熱
し、活性金属ロウ材ペーストおよびロウ材を溶融させ
て、金属回路板および金属板とセラミック基板とを、な
らびに金属回路板および金属板と金属柱とを接合してセ
ラミック回路基板を得た。Finally, the active metal brazing material paste and the brazing material are melted by heating in a vacuum to a temperature of about 900 ° C. to melt the metal circuit board and the metal board and the ceramic board, as well as the metal circuit board and the metal board. The plate and the metal column were joined together to obtain a ceramic circuit board.
【0052】上記のような製造方法で得られたセラミッ
ク回路基板のうち、金属板のセラミック基板と反対側の
主面の中央部に形成された凸部の高さおよび金属板の外
周から凹部の外周までの距離が表1に示すようなものを
共晶半田を用いてプリント基板に接合した後、−40℃/
+125℃の温度サイクル試験に投入し、温度サイクル500
サイクル終了後および1000サイクル終了後の金属板とプ
リント基板との接合部の半田周辺の断面を観察して評価
した。その結果を表1に示す。なお、表1中の試料No.
1は凸部のない場合である。Among the ceramic circuit boards obtained by the above manufacturing method, the height of the convex portion formed in the central portion of the main surface of the metal plate on the side opposite to the ceramic substrate and the height of the concave portion from the outer periphery of the metal plate. After bonding the ones with the distance to the outer periphery as shown in Table 1 to the printed circuit board using eutectic solder,
Put into the temperature cycle test of + 125 ℃, and perform the temperature cycle 500
After the cycle and after 1000 cycles, the cross section around the solder at the joint between the metal plate and the printed circuit board was observed and evaluated. The results are shown in Table 1. In addition, sample No.
1 is the case where there is no convex portion.
【0053】[0053]
【表1】 [Table 1]
【0054】表1から明らかなように、金属板に凸部を
設けない場合(No.1)は温度サイクル試験500サイ
クル後に半田にクラックが発生し、1000サイクル後では
クラックが進展してセラミック回路基板のプリント基板
からのハガレが発生してしまった。これに対して、金属
板に凸部を設けた場合は1000サイクル後でもハガレが発
生せず、凸部の高さが50μm以上200μm以下のものに
ついては1000サイクル後でもクラックの発生も観られな
かった。凸部の高さが30μmの試料(No.2)・40μ
mの試料(No.3)・230μmの試料(No.8)お
よび250μmの試料(No.9)は1000サイクル後に半
田の最外周部にクラックが発生したが、これは半田が充
填される空間が小さく強度の向上が大きくなかったた
め、および凸部の高さが高く凸部の周囲とプリント基板
との間に半田が充填されずに強度の向上が大きくなかっ
たためであると考えられる。As is clear from Table 1, when the metal plate is not provided with a convex portion (No. 1), cracks occur in the solder after 500 cycles of the temperature cycle test, and cracks develop after 1000 cycles and the ceramic circuit The peeling from the printed circuit board of the board has occurred. On the other hand, when the metal plate is provided with protrusions, peeling does not occur even after 1000 cycles, and when the height of the protrusions is 50 μm or more and 200 μm or less, no crack is observed even after 1000 cycles. It was Sample with convex height of 30μm (No.2) / 40μ
m sample (No. 3), 230 μm sample (No. 8) and 250 μm sample (No. 9) had cracks at the outermost periphery of the solder after 1000 cycles, but this is the space filled with solder. It is thought that this is because the strength was not so large and the strength was not significantly improved, and the height of the convex portion was high and solder was not filled between the periphery of the convex portion and the printed circuit board, and the strength was not significantly improved.
【0055】また、金属板の外周から金属板の外周側に
位置する凸部の外周までの距離が100μm以上の試料は1
000サイクル後でもクラックの発生も観られなかった。
金属板の外周から凸部の外周までの距離が50μm、80μ
mおよび90μmの試料(No.10、11および12)は1000
サイクル後に半田の最外周部にクラックが発生したが、
これは半田が充填される空間が小さく強度の向上が大き
くなかったためであると考えられる。Further, if the distance from the outer circumference of the metal plate to the outer circumference of the protrusion located on the outer circumference side of the metal plate is 100 μm or more,
No generation of cracks was observed even after 000 cycles.
The distance from the outer periphery of the metal plate to the outer periphery of the protrusion is 50 μm, 80 μ
m and 90 μm samples (No. 10, 11 and 12) are 1000
After the cycle, a crack occurred in the outermost periphery of the solder,
It is considered that this is because the space filled with solder was small and the improvement in strength was not large.
【0056】また、同様にして作製したセラミック回路
基板について、金属板とプリント基板との間の熱抵抗を
測定した結果を図3に線図で示す。ここでは、凸部の高
さが150μmで、金属板の面積に対する凸部の頭部の面
積の比率が0%〜100%であるセラミック回路基板の金
属回路板上に発熱チップを共晶半田で実装し、共晶半田
を用いて金属板をプリント基板に接合した後、金属板お
よびプリント基板の表面の温度を熱電対を用いて測定し
て金属板とプリント基板との間の熱抵抗を算出した。こ
こで、金属板の凸部の頭部とプリント基板との間の共晶
半田の厚みは約20μmであり、金属板の面積に対する凸
部の頭部の面積の比率が0%とは、共晶半田の厚みが金
属板とプリント基板との間の全域において150μmであ
る場合を示している。図3の線図は、金属板の面積に対
する凸部の頭部の面積の比率が0%の場合の熱抵抗を1
とした場合の熱抵抗比に換算してまとめたものであり、
横軸は金属板の面積に対する凸部の頭部の面積の比率
(%)を、縦軸は熱抵抗比を表しており、黒菱形のプロ
ットおよび特性曲線は測定結果を示している。FIG. 3 is a diagram showing the result of measuring the thermal resistance between the metal plate and the printed circuit board for the ceramic circuit board produced in the same manner. Here, the heating chip is eutectic solder on the metal circuit board of the ceramic circuit board in which the height of the projection is 150 μm and the ratio of the area of the head of the projection to the area of the metal plate is 0% to 100%. After mounting and joining the metal plate to the printed circuit board using eutectic solder, the temperature of the metal plate and the surface of the printed circuit board is measured using a thermocouple to calculate the thermal resistance between the metal plate and the printed circuit board. did. Here, the thickness of the eutectic solder between the head of the convex portion of the metal plate and the printed board is about 20 μm, and the ratio of the area of the head of the convex portion to the area of the metal plate is 0%, The case where the thickness of the crystal solder is 150 μm over the entire area between the metal plate and the printed board is shown. The diagram in FIG. 3 shows the thermal resistance when the ratio of the area of the convex head to the area of the metal plate is 0%.
It is a summary that is converted to the thermal resistance ratio when
The horizontal axis represents the ratio (%) of the area of the head of the convex portion to the area of the metal plate, the vertical axis represents the thermal resistance ratio, and the black rhombus plot and the characteristic curve represent the measurement results.
【0057】図3に示す結果からは、金属板の面積に対
する凸部の頭部の面積の比率が40%より小さくなると急
激に熱抵抗が上昇する傾向が観られる。From the results shown in FIG. 3, it can be seen that when the ratio of the area of the convex head to the area of the metal plate is less than 40%, the thermal resistance tends to increase rapidly.
【0058】以上の結果から、金属板の中央部に頭部が
平坦な凸部を形成することにより温度サイクル試験等の
信頼性試験においても金属板とプリント基板との間にハ
ガレを発生させることがなく、さらに凸部の高さを50μ
m以上200μm以下、金属板の外周から前記凸部の外周
までの距離を100μm以上とし、かつ金属板の面積に対
する凸部の頭部の面積の比率を40%以上とすることによ
り、温度サイクル試験等の信頼性試験においてもセラミ
ック回路とプリント基板との間にクラックを発生させる
ことがなく、金属板と外部接続基板との間の熱抵抗の上
昇が抑えられ、その結果、セラミック回路基板と外部接
続基板との接合信頼性の高いセラミック回路基板が得ら
れることが確認できた。From the above results, by forming a convex portion having a flat head in the central portion of the metal plate, peeling may occur between the metal plate and the printed circuit board even in a reliability test such as a temperature cycle test. And the height of the convex part is 50μ
Temperature cycle test by setting the distance from the outer circumference of the metal plate to the outer circumference of the convex portion to 100 μm or more and the ratio of the area of the head of the convex portion to the area of the metal plate of 40% or more. In a reliability test such as that, cracks are not generated between the ceramic circuit and the printed circuit board, and the rise in thermal resistance between the metal plate and the external connection board is suppressed. It was confirmed that a ceramic circuit board with high bonding reliability with the connection board was obtained.
【0059】(実施例2)次に、実施例1で用いたセラ
ミック回路基板およびプリント基板を用い、セラミック
回路基板の金属板の凸部を縦・横方向にそれぞれ2分割
し、頭部の面積が同じ4つの凸部を形成した。なお、凸
部の高さは150μm、金属板の外周から凸部の外周まで
の距離は200μmとした。また、表2中の試料No.16は
凸部を分割していない場合である。凸部間の間隔を30〜
150μmとして、セラミック回路基板とプリント基板と
の接合後のセラミック回路基板の位置ずれ(単位μm)
を調べた。結果を表2に示す。(Embodiment 2) Next, using the ceramic circuit board and the printed circuit board used in Embodiment 1, the convex portions of the metal plate of the ceramic circuit board are divided into two in the vertical and horizontal directions, respectively, and the head area is Formed the same four convex portions. The height of the protrusion was 150 μm, and the distance from the outer periphery of the metal plate to the outer periphery of the protrusion was 200 μm. Further, sample No. 16 in Table 2 is the case where the convex portion is not divided. The interval between convex parts is 30 ~
Assuming 150 μm, the ceramic circuit board will be misaligned (unit: μm) after the ceramic circuit board and printed circuit board are joined.
I checked. The results are shown in Table 2.
【0060】[0060]
【表2】 [Table 2]
【0061】表2から明らかなように、凸部間隔が100
μm以下の試料(試料No.16、17)では位置ズレが大
きくなり、実装精度が低下する傾向が見られた。凸部間
隔が100μm以上の試料(No.19、20)では、溶融し
た半田が金属板の凸部間に入り込みセラミック回路基板
の金属板およびプリント基板等の外部接続基板間の摩擦
が大きくなって両者の位置ずれが起こり難くなることが
わかった。As is clear from Table 2, the interval between convex portions is 100.
The samples (sample Nos. 16 and 17) having a thickness of μm or less had a large positional deviation, and the mounting accuracy tended to decrease. In samples (No. 19 and 20) with a convex interval of 100 μm or more, the molten solder enters between the convex parts of the metal plate, and the friction between the metal plate of the ceramic circuit board and the external connection board such as the printed board increases. It was found that the displacement between the two is unlikely to occur.
【0062】なお、本発明は上述の実施の形態の例に限
定されるものではなく、本発明の趣旨を逸脱しない範囲
であれば種々の変更は可能である。It should be noted that the present invention is not limited to the examples of the above-described embodiments, and various modifications can be made without departing from the spirit of the present invention.
【0063】例えば、上述の例ではセラミック基板2が
酸化アルミニウム質焼結体で形成された例を示したが、
半導体素子9が多量の熱を発し、この熱を効率良く除去
したい場合には、セラミック基板2を熱伝達率の高い窒
化アルミニウム質焼結体や窒化珪素質焼結体で形成すれ
ばよく、金属回路板3に高速で電気信号を伝播させたい
場合には、セラミック基板2を誘電率の低いムライト質
焼結体等で形成すればよい。For example, in the above example, the ceramic substrate 2 is made of an aluminum oxide sintered body, but
When the semiconductor element 9 generates a large amount of heat and it is desired to efficiently remove this heat, the ceramic substrate 2 may be formed of an aluminum nitride sintered body or a silicon nitride sintered body having a high heat transfer coefficient. When it is desired to propagate an electric signal to the circuit board 3 at high speed, the ceramic substrate 2 may be formed of a mullite sintered body having a low dielectric constant.
【0064】また、上述の例ではセラミック基板2に活
性金属ロウ材6を介して直接に金属回路板3および金属
板4をロウ付けしたが、これをセラミック基板2の表面
に予めタングステンまたはモリブデン等のメタライズ金
属層を被着させておき、このメタライズ金属層に金属回
路板3および金属板4をロウ材を介して接合させてもよ
い。このときのメタライズ金属層は、貫通孔を有するセ
ラミック基板2を形成した後にタングステンまたはモリ
ブデン等の金属ペーストを塗布して焼き付けて形成して
もよいし、セラミック基板2を形成する際に、セラミッ
クグリーンシート上にタングステンまたはモリブデン等
の金属ペーストを塗布しておき、セラミック基板2と同
時に形成してもよい。また、メタライズ金属層の形成の
際に、貫通導体5も同様の金属ペーストを貫通孔に充填
することにより形成してもよい。Further, in the above example, the metal circuit board 3 and the metal plate 4 are directly brazed to the ceramic substrate 2 via the active metal brazing material 6, but this is preliminarily attached to the surface of the ceramic substrate 2 with tungsten, molybdenum or the like. The metallized metal layer may be deposited, and the metal circuit board 3 and the metal plate 4 may be bonded to the metallized metal layer via a brazing material. The metallized metal layer at this time may be formed by forming a ceramic substrate 2 having through holes and then applying a metal paste such as tungsten or molybdenum and baking it. Alternatively, when forming the ceramic substrate 2, a ceramic green layer is formed. A metal paste such as tungsten or molybdenum may be applied on the sheet and formed simultaneously with the ceramic substrate 2. Further, when forming the metallized metal layer, the through conductor 5 may be formed by filling the through holes with a similar metal paste.
【0065】さらには、上述の例ではセラミック基板2
に活性金属ロウ材6を介してあらかじめ回路配線パター
ン形状に形成された金属回路板3および金属板4をロウ
付けしたが、セラミック基板2と略同形状の金属板をロ
ウ付けした後にエッチングにより不要な金属部分を除去
して回路配線パターン形成を行なって金属回路板3およ
び金属板4としてもよい。Furthermore, in the above example, the ceramic substrate 2 is used.
The metal circuit board 3 and the metal plate 4 which were previously formed in a circuit wiring pattern shape were brazed to each other via the active metal brazing material 6, but it is unnecessary by etching after brazing a metal plate having substantially the same shape as the ceramic substrate 2. The metal circuit board 3 and the metal plate 4 may be formed by removing the metal portion and forming a circuit wiring pattern.
【0066】また、上述の例ではセラミック基板2の貫
通孔内にロウ材7付き貫通導体5を挿入配置したが、貫
通孔内に金属柱から成る貫通導体5を挿入配置し、ロウ
材ペーストをその上下両端面に塗布するという方法を採
ってもよい。Further, in the above example, the through conductor 5 with the brazing material 7 is inserted and arranged in the through hole of the ceramic substrate 2. However, the through conductor 5 made of a metal pillar is inserted and arranged in the through hole and the brazing material paste is used. A method of applying to both upper and lower end surfaces may be adopted.
【0067】さらに、上述の例では金属板4の主面に形
成された凸部4aは金属板4と一体に形成したが、凸部
4aを金属板4と同様の材料・方法で別体に形成してお
き、ロウ材等の接着剤を介して金属板4の主面に凸部4
aを接着固定することにより形成してもよい。Further, in the above example, the convex portion 4a formed on the main surface of the metal plate 4 is formed integrally with the metal plate 4, but the convex portion 4a is formed as a separate member by the same material and method as the metal plate 4. After being formed, the convex portion 4 is formed on the main surface of the metal plate 4 via an adhesive such as a brazing material.
It may be formed by adhesively fixing a.
【0068】[0068]
【発明の効果】本発明のセラミック回路基板によれば、
セラミック基板の一方主面に金属回路板が、他方主面に
前記金属回路板と対向させて金属板が配置され、前記金
属回路板と前記金属板とが前記セラミック基板内に配置
された貫通導体で接続されているとともに、前記金属板
の前記セラミック基板と反対側の主面の中央部に頭部が
平坦な凸部が形成されており、プリント基板等の外部接
続基板に接合される金属板の主面の中央部が頭部が平坦
な凸形状とされていることから、金属板に形成された凸
部を外部接続基板に接着剤としての半田を介して接合さ
せた場合に、外部接続基板の上面と凸部の側面と凸部の
周囲の金属板の表面との間に空間が形成されるとともに
この空間内および外部接続基板の表面と凸部の平坦な頭
部との間に半田が充填されて介在することとなり、その
結果、凸部が形成された金属板の外部接続基板への半田
を介しての接合が三次元的となって、セラミック回路基
板を外部接続基板に確実・強固に接合させることができ
る。According to the ceramic circuit board of the present invention,
A metal circuit board is arranged on one main surface of the ceramic substrate, and a metal plate is arranged on the other main surface so as to face the metal circuit board, and the metal circuit board and the metal plate are arranged in the ceramic substrate. A metal plate that is connected to an external connection substrate such as a printed circuit board by forming a convex portion with a flat head in the center of the main surface of the metal plate on the side opposite to the ceramic substrate. Since the central part of the main surface of the main part is a convex shape with a flat head, when the convex part formed on the metal plate is bonded to the external connection board via solder as an adhesive, the external connection A space is formed between the upper surface of the board, the side surface of the convex portion, and the surface of the metal plate around the convex portion, and solder is provided in this space and between the surface of the external connection board and the flat head of the convex portion. Will be filled and intervene, resulting in the formation of convex portions. The solder joint through to the external connection substrate of the metal plate is a three-dimensional, can be a ceramic circuit board bonded securely, firmly to the external connection substrate.
【0069】また本発明のセラミック回路基板によれ
ば、前記凸部の高さが50μm以上200μm以下で、前記
金属板の外周から前記凸部の外周までの距離が100μm
以上であり、かつ前記金属板の面積に対する前記凸部の
頭部の面積の比率が40%以上であるものとしたときに
は、この凸部が形成された金属板を外部接続基板に接着
剤としての半田を介して接合させた場合に、外部接続基
板の上面と凸部の側面と凸部の周囲の金属板の表面との
間に十分な容積の空間が形成されるとともにこの空間内
および外部接続基板の表面と凸部の頭部との間に半田が
充填されて介在することとなり、その結果、凸部を設け
た金属板の外部接続基板への半田を介しての接合が三次
元的となってセラミック回路基板を外部接続基板に確実
かつ強固に接合させることができ、また、外部接続基板
の表面と金属板の凸部の頭部とが十分な面積で当接し、
凸部と外部接続基板の表面との間に介在する半田は金属
板の表面に大きく融け広がって厚みが50μm未満の薄い
ものとなるので、セラミック回路基板に搭載された半導
体素子の作動時に発生する熱はセラミック回路基板から
外部接続基板に効率良く伝達されることとなり、その結
果、半導体素子を常に適温として、半導体素子を長期間
にわたり正常、かつ安定に作動させることが可能とな
る。According to the ceramic circuit board of the present invention, the height of the convex portion is 50 μm or more and 200 μm or less, and the distance from the outer periphery of the metal plate to the outer periphery of the convex portion is 100 μm.
When the ratio of the area of the head of the convex portion to the area of the metal plate is 40% or more, the metal plate on which the convex portion is formed is used as an adhesive on the external connection substrate. When joined via solder, a space of sufficient volume is formed between the upper surface of the external connection board, the side surface of the convex portion, and the surface of the metal plate around the convex portion, and the space inside and outside Solder is filled and intervenes between the surface of the board and the head of the convex portion, and as a result, the three-dimensional joining of the metal plate provided with the convex portion to the external connection board via solder is achieved. Therefore, the ceramic circuit board can be securely and firmly joined to the external connection board, and the surface of the external connection board and the head of the convex portion of the metal plate come into contact with each other with a sufficient area,
Solder intervening between the convex portion and the surface of the external connection board is largely melted and spread on the surface of the metal plate and becomes thin with a thickness of less than 50 μm, so it is generated when the semiconductor element mounted on the ceramic circuit board operates. The heat is efficiently transferred from the ceramic circuit board to the external connection board, and as a result, it is possible to keep the semiconductor element at an appropriate temperature and operate the semiconductor element normally and stably for a long period of time.
【0070】さらに、本発明のセラミック回路基板によ
れば、前記凸部が複数で、隣接して位置する前記凸部間
の間隔を100μm以上としたときには、この凸部が形成
された金属板を外部接続基板に接着剤としての半田を介
して接合させた場合に、隣接する凸部間で外部接続基板
の上面と金属板の表面との間に十分な容積の空間が形成
されるとともにこの空間内に半田が充填され、この空間
内に充填された半田がセラミック回路基板の金属板およ
びプリント基板等の外部接続基板間に働く摩擦を増加さ
せることとなり、セラミック回路基板と外部接続基板と
を半田を溶融させて接合させる際にセラミック回路基板
が外部接続基板の表面を滑ることはなく、その結果、両
者の位置ずれが発生して、セラミック回路基板の外部接
続基板への実装精度が低下してしまうことがない。Further, according to the ceramic circuit board of the present invention, when the number of the convex portions is plural and the interval between the adjacent convex portions is 100 μm or more, the metal plate having the convex portions is formed. When bonded to the external connection board via solder as an adhesive, a space of sufficient volume is formed between the upper surface of the external connection board and the surface of the metal plate between the adjacent convex portions, and this space The inside of the ceramic circuit board is filled with solder, and the solder filled in this space increases the friction that acts between the metal plate of the ceramic circuit board and the external connection board such as a printed circuit board. The ceramic circuit board does not slide on the surface of the external connection board when it is melted and joined, and as a result, the two are displaced, and the accuracy of mounting the ceramic circuit board on the external connection board Not be lowered.
【図1】本発明のセラミック回路基板の実施の形態の一
例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a ceramic circuit board of the present invention.
【図2】本発明のセラミック回路基板の実施の形態の他
の例を示す断面図である。FIG. 2 is a cross-sectional view showing another example of the embodiment of the ceramic circuit board of the present invention.
【図3】本発明のセラミック回路基板の実施例および比
較例の試料による熱抵抗測定の結果の一例を示す線図で
ある。FIG. 3 is a diagram showing an example of the results of thermal resistance measurement using samples of Examples and Comparative Examples of the ceramic circuit board of the present invention.
1・・・・・・・・セラミック回路基板 2・・・・・・・・セラミック基板 3・・・・・・・・金属回路板 4・・・・・・・・金属板 4a・・・・・・・凸部 5・・・・・・・・貫通導体 6・・・・・・・・活性金属ロウ材 7・・・・・・・・ロウ材 8・・・・・・・・半田 9・・・・・・・・半導体素子 10・・・・・・・・外部接続基板 1 ... Ceramic circuit board 2 ... Ceramic substrate 3 ... Metal circuit board 4 ... Metal plate 4a ... 5 ... Penetration conductor 6 ... ・ ・ ・ Active metal brazing material 7 ...... brazing material 8 ... ・ ・ ・ Solder 9 ... Semiconductor element 10 ... External connection board
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Claims (3)
が、他方主面に前記金属回路板と対向させて金属板が配
置され、前記金属回路板と前記金属板とが前記セラミッ
ク基板内に配置された貫通導体で接続されているととも
に、前記金属板の前記セラミック基板と反対側の主面の
中央部に頭部が平坦な凸部が形成されていることを特徴
とするセラミック回路基板。1. A metal circuit board is disposed on one main surface of a ceramic substrate, and a metal plate is disposed on the other main surface so as to face the metal circuit board. The metal circuit board and the metal plate are disposed in the ceramic substrate. A ceramic circuit board which is connected by through conductors arranged and has a convex portion having a flat head formed in the central portion of the main surface of the metal plate opposite to the ceramic substrate.
m以下で、前記金属板の外周から前記凸部の外周までの
距離が100μm以上であり、かつ前記金属板の面積に
対する前記凸部の頭部の面積の比率が40%以上である
ことを特徴とする請求項1記載のセラミック回路基板。2. The height of the convex portion is 50 μm or more and 200 μm or more.
m or less, the distance from the outer periphery of the metal plate to the outer periphery of the protrusion is 100 μm or more, and the ratio of the area of the head of the protrusion to the area of the metal plate is 40% or more. The ceramic circuit board according to claim 1.
て位置する前記凸部間の間隔が100μm以上であるこ
とを特徴とする請求項1または請求項2記載のセラミッ
ク回路基板。3. The ceramic circuit board according to claim 1, wherein a plurality of the convex portions are provided, and an interval between the adjacent convex portions is 100 μm or more.
Priority Applications (1)
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JP2002222745A JP2003324167A (en) | 2002-02-26 | 2002-07-31 | Ceramic circuit board |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-50563 | 2002-02-26 | ||
JP2002050563 | 2002-02-26 | ||
JP2002222745A JP2003324167A (en) | 2002-02-26 | 2002-07-31 | Ceramic circuit board |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2010103311A (en) * | 2008-10-23 | 2010-05-06 | Toyota Central R&D Labs Inc | Multilayer substrate |
JP2010232259A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Thermoelectric conversion module, optical transmission module, cooling device, power generator, and thermostat |
JP2012109620A (en) * | 2012-03-02 | 2012-06-07 | Toyota Motor Corp | Cooling device of semiconductor module |
KR101289999B1 (en) * | 2006-02-16 | 2013-07-30 | 스미토모 덴키 고교 가부시키가이샤 | Process for producing superconducting thin-film material and superconducting equipment |
CN110870394A (en) * | 2017-07-04 | 2020-03-06 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
CN117440601A (en) * | 2023-10-23 | 2024-01-23 | 无锡芯动半导体科技有限公司 | Power module |
-
2002
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JP2010103311A (en) * | 2008-10-23 | 2010-05-06 | Toyota Central R&D Labs Inc | Multilayer substrate |
JP2010232259A (en) * | 2009-03-26 | 2010-10-14 | Kyocera Corp | Thermoelectric conversion module, optical transmission module, cooling device, power generator, and thermostat |
JP2012109620A (en) * | 2012-03-02 | 2012-06-07 | Toyota Motor Corp | Cooling device of semiconductor module |
CN110870394A (en) * | 2017-07-04 | 2020-03-06 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
CN110870394B (en) * | 2017-07-04 | 2024-01-16 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
CN117440601A (en) * | 2023-10-23 | 2024-01-23 | 无锡芯动半导体科技有限公司 | Power module |
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