JP2001036141A5 - - Google Patents
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- Publication number
- JP2001036141A5 JP2001036141A5 JP1999209062A JP20906299A JP2001036141A5 JP 2001036141 A5 JP2001036141 A5 JP 2001036141A5 JP 1999209062 A JP1999209062 A JP 1999209062A JP 20906299 A JP20906299 A JP 20906299A JP 2001036141 A5 JP2001036141 A5 JP 2001036141A5
- Authority
- JP
- Japan
- Prior art keywords
- junction
- semiconductor light
- bidirectional
- band
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 15
- 230000002457 bidirectional Effects 0.000 claims 8
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 230000003287 optical Effects 0.000 claims 1
- 230000005641 tunneling Effects 0.000 claims 1
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20906299A JP4024431B2 (ja) | 1999-07-23 | 1999-07-23 | 双方向半導体発光素子及び光伝送装置 |
US09/621,482 US6365911B1 (en) | 1999-07-23 | 2000-07-21 | Bidirectional semiconductor light-emitting element and optical system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20906299A JP4024431B2 (ja) | 1999-07-23 | 1999-07-23 | 双方向半導体発光素子及び光伝送装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001036141A JP2001036141A (ja) | 2001-02-09 |
JP2001036141A5 true JP2001036141A5 (de) | 2005-06-09 |
JP4024431B2 JP4024431B2 (ja) | 2007-12-19 |
Family
ID=16566634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20906299A Expired - Fee Related JP4024431B2 (ja) | 1999-07-23 | 1999-07-23 | 双方向半導体発光素子及び光伝送装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6365911B1 (de) |
JP (1) | JP4024431B2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001352098A (ja) * | 2000-06-07 | 2001-12-21 | Sanyo Electric Co Ltd | 半導体発光素子およびその製造方法 |
KR100431760B1 (ko) * | 2001-08-08 | 2004-05-17 | 삼성전기주식회사 | AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법 |
US6515308B1 (en) * | 2001-12-21 | 2003-02-04 | Xerox Corporation | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection |
US6724013B2 (en) * | 2001-12-21 | 2004-04-20 | Xerox Corporation | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection |
US6878975B2 (en) * | 2002-02-08 | 2005-04-12 | Agilent Technologies, Inc. | Polarization field enhanced tunnel structures |
JP4699681B2 (ja) * | 2003-06-27 | 2011-06-15 | パナソニック株式会社 | Ledモジュール、および照明装置 |
US7072376B2 (en) * | 2004-09-16 | 2006-07-04 | Corning Incorporated | Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom |
JP4537832B2 (ja) * | 2004-11-11 | 2010-09-08 | 株式会社東芝 | 光クロック分配装置及び光クロック分配システム |
DE102006039369A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
JP2008159629A (ja) * | 2006-12-20 | 2008-07-10 | Rohm Co Ltd | 光通信用半導体素子 |
KR100891799B1 (ko) * | 2007-02-06 | 2009-04-07 | 삼성전기주식회사 | 교류전원용 발광소자 |
JP5676273B2 (ja) * | 2008-01-21 | 2015-02-25 | インシアヴァ (ピーテーワイ) リミテッド | パンチスルー効果を利用した半導体発光デバイス |
CN102057504A (zh) * | 2008-06-05 | 2011-05-11 | 3M创新有限公司 | 接合有半导体波长转换器的发光二极管 |
JP2010028751A (ja) * | 2008-07-24 | 2010-02-04 | Toshiba Corp | コンプリメンタリー光配線装置 |
JP2010136244A (ja) * | 2008-12-08 | 2010-06-17 | Toshiba Corp | 送信回路およびコンプリメンタリー光配線システム |
KR101248383B1 (ko) * | 2009-12-22 | 2013-03-28 | 우리이앤엘 주식회사 | 반도체 발광소자 |
US20120091916A1 (en) * | 2010-10-14 | 2012-04-19 | Humboldt-Universitat Zu Berlin | Radiation source |
JP5665504B2 (ja) * | 2010-11-24 | 2015-02-04 | キヤノン株式会社 | 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ |
JP5440525B2 (ja) * | 2011-02-26 | 2014-03-12 | 豊田合成株式会社 | 半導体発光素子 |
JP6490399B2 (ja) * | 2014-11-10 | 2019-03-27 | 国立大学法人横浜国立大学 | センサー装置、生体分子視覚化装置 |
JP6395651B2 (ja) * | 2015-03-30 | 2018-09-26 | 株式会社ジャパンディスプレイ | 入力装置及び表示装置 |
JP2016212561A (ja) * | 2015-05-01 | 2016-12-15 | 株式会社ジャパンディスプレイ | 入力装置及び表示装置 |
PL438744A1 (pl) * | 2021-08-14 | 2023-02-20 | Instytut Wysokich Ciśnień Polskiej Akademii Nauk | Dwukierunkowa dioda elektroluminescencyjna i sposób wytwarzania takiej diody |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3864721A (en) * | 1973-06-18 | 1975-02-04 | Us Army | Tunneling electroluminescent diode with voltage variable wavelength output |
US4577207A (en) * | 1982-12-30 | 1986-03-18 | At&T Bell Laboratories | Dual wavelength optical source |
JPH0358532A (ja) | 1989-07-27 | 1991-03-13 | Toshiba Corp | 光伝送方式 |
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
US5212706A (en) * | 1991-12-03 | 1993-05-18 | University Of Connecticut | Laser diode assembly with tunnel junctions and providing multiple beams |
JPH07202321A (ja) * | 1993-12-28 | 1995-08-04 | Toshiba Corp | 光半導体装置 |
US5679963A (en) * | 1995-12-05 | 1997-10-21 | Sandia Corporation | Semiconductor tunnel junction with enhancement layer |
US5995529A (en) * | 1997-04-10 | 1999-11-30 | Sandia Corporation | Infrared light sources with semimetal electron injection |
US6278134B1 (en) * | 1999-05-21 | 2001-08-21 | Lucent Technologies, Inc. | Bi-directional unipolar semiconductor light source |
-
1999
- 1999-07-23 JP JP20906299A patent/JP4024431B2/ja not_active Expired - Fee Related
-
2000
- 2000-07-21 US US09/621,482 patent/US6365911B1/en not_active Expired - Fee Related
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