JP2001036141A5 - - Google Patents

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Publication number
JP2001036141A5
JP2001036141A5 JP1999209062A JP20906299A JP2001036141A5 JP 2001036141 A5 JP2001036141 A5 JP 2001036141A5 JP 1999209062 A JP1999209062 A JP 1999209062A JP 20906299 A JP20906299 A JP 20906299A JP 2001036141 A5 JP2001036141 A5 JP 2001036141A5
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JP
Japan
Prior art keywords
junction
semiconductor light
bidirectional
band
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999209062A
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English (en)
Japanese (ja)
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JP4024431B2 (ja
JP2001036141A (ja
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Publication date
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Priority to JP20906299A priority Critical patent/JP4024431B2/ja
Priority claimed from JP20906299A external-priority patent/JP4024431B2/ja
Priority to US09/621,482 priority patent/US6365911B1/en
Publication of JP2001036141A publication Critical patent/JP2001036141A/ja
Publication of JP2001036141A5 publication Critical patent/JP2001036141A5/ja
Application granted granted Critical
Publication of JP4024431B2 publication Critical patent/JP4024431B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP20906299A 1999-07-23 1999-07-23 双方向半導体発光素子及び光伝送装置 Expired - Fee Related JP4024431B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20906299A JP4024431B2 (ja) 1999-07-23 1999-07-23 双方向半導体発光素子及び光伝送装置
US09/621,482 US6365911B1 (en) 1999-07-23 2000-07-21 Bidirectional semiconductor light-emitting element and optical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20906299A JP4024431B2 (ja) 1999-07-23 1999-07-23 双方向半導体発光素子及び光伝送装置

Publications (3)

Publication Number Publication Date
JP2001036141A JP2001036141A (ja) 2001-02-09
JP2001036141A5 true JP2001036141A5 (de) 2005-06-09
JP4024431B2 JP4024431B2 (ja) 2007-12-19

Family

ID=16566634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20906299A Expired - Fee Related JP4024431B2 (ja) 1999-07-23 1999-07-23 双方向半導体発光素子及び光伝送装置

Country Status (2)

Country Link
US (1) US6365911B1 (de)
JP (1) JP4024431B2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001352098A (ja) * 2000-06-07 2001-12-21 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
KR100431760B1 (ko) * 2001-08-08 2004-05-17 삼성전기주식회사 AlGaInN계 반도체 엘이디(LED) 소자 및 그 제조 방법
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
JP4699681B2 (ja) * 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
JP4537832B2 (ja) * 2004-11-11 2010-09-08 株式会社東芝 光クロック分配装置及び光クロック分配システム
DE102006039369A1 (de) * 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
JP2008159629A (ja) * 2006-12-20 2008-07-10 Rohm Co Ltd 光通信用半導体素子
KR100891799B1 (ko) * 2007-02-06 2009-04-07 삼성전기주식회사 교류전원용 발광소자
JP5676273B2 (ja) * 2008-01-21 2015-02-25 インシアヴァ （ピーテーワイ） リミテッド パンチスルー効果を利用した半導体発光デバイス
CN102057504A (zh) * 2008-06-05 2011-05-11 3M创新有限公司 接合有半导体波长转换器的发光二极管
JP2010028751A (ja) * 2008-07-24 2010-02-04 Toshiba Corp コンプリメンタリー光配線装置
JP2010136244A (ja) * 2008-12-08 2010-06-17 Toshiba Corp 送信回路およびコンプリメンタリー光配線システム
KR101248383B1 (ko) * 2009-12-22 2013-03-28 우리이앤엘 주식회사 반도체 발광소자
US20120091916A1 (en) * 2010-10-14 2012-04-19 Humboldt-Universitat Zu Berlin Radiation source
JP5665504B2 (ja) * 2010-11-24 2015-02-04 キヤノン株式会社 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ
JP5440525B2 (ja) * 2011-02-26 2014-03-12 豊田合成株式会社 半導体発光素子
JP6490399B2 (ja) * 2014-11-10 2019-03-27 国立大学法人横浜国立大学 センサー装置、生体分子視覚化装置
JP6395651B2 (ja) * 2015-03-30 2018-09-26 株式会社ジャパンディスプレイ 入力装置及び表示装置
JP2016212561A (ja) * 2015-05-01 2016-12-15 株式会社ジャパンディスプレイ 入力装置及び表示装置
PL438744A1 (pl) * 2021-08-14 2023-02-20 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Dwukierunkowa dioda elektroluminescencyjna i sposób wytwarzania takiej diody

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864721A (en) * 1973-06-18 1975-02-04 Us Army Tunneling electroluminescent diode with voltage variable wavelength output
US4577207A (en) * 1982-12-30 1986-03-18 At&T Bell Laboratories Dual wavelength optical source
JPH0358532A (ja) 1989-07-27 1991-03-13 Toshiba Corp 光伝送方式
US5079601A (en) * 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH07202321A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 光半導体装置
US5679963A (en) * 1995-12-05 1997-10-21 Sandia Corporation Semiconductor tunnel junction with enhancement layer
US5995529A (en) * 1997-04-10 1999-11-30 Sandia Corporation Infrared light sources with semimetal electron injection
US6278134B1 (en) * 1999-05-21 2001-08-21 Lucent Technologies, Inc. Bi-directional unipolar semiconductor light source

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