JP2000156489A - Ccd solid state image sensor - Google Patents
Ccd solid state image sensorInfo
- Publication number
- JP2000156489A JP2000156489A JP10330500A JP33050098A JP2000156489A JP 2000156489 A JP2000156489 A JP 2000156489A JP 10330500 A JP10330500 A JP 10330500A JP 33050098 A JP33050098 A JP 33050098A JP 2000156489 A JP2000156489 A JP 2000156489A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- vertical
- read
- reading
- receiving elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ＣＣＤ固体撮像素
子、特に、インターライン或いはフレームインターライ
ン型ＣＣＤ固体撮像素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CCD solid-state imaging device, and more particularly, to an interline or frame interline CCD solid-state imaging device.
【０００２】[0002]
【従来の技術】インターライン型ＣＣＤ固体撮像素子
は、一般に、各画素の受光手段を成す受光素子をマトリ
ックス状に配置し、各受光素子からの信号電荷を受光素
子の各垂直列に対応して設けられた垂直レジスタに読み
出し、該垂直レジスタにより垂直転送し、各垂直レジス
タの転送先側に設けられた水平レジスタにより水平転送
し、出力部にて電圧の変換されて送出されるようになっ
ており、図３（Ａ）は平面図である。2. Description of the Related Art In general, an interline CCD solid-state image pickup device has a structure in which light receiving elements constituting light receiving means of each pixel are arranged in a matrix, and a signal charge from each light receiving element corresponds to each vertical column of the light receiving element. The data is read out to the provided vertical register, vertically transferred by the vertical register, horizontally transferred by the horizontal register provided on the transfer destination side of each vertical register, the voltage is converted at the output unit and transmitted. FIG. 3A is a plan view.
【０００３】図３（Ａ）において、１は受光素子、２は
垂直レジスタ、３は第１層目のポリシリコン（１ｐｏｌ
ｙ）からなる転送電極で、各隣接受光素子水平列間上を
略帯状に延び且つ各水平方向に隣接する各受光素子間上
毎に下方に櫛歯状に延びる歯状部３ａを有する形状を有
している。４は第２層目のポリシリコン（２ｐｏｌｙ）
からなる転送電極で、各隣接受光素子水平列間上を略帯
状に延び且つ各水平方向に隣接する各受光素子間上毎に
上方に櫛歯状に延びる歯状部４ａを有する形状を有して
いる。この歯状部４ａはその先端部が第１層目のポリシ
リコンからなる転送電極３の歯状部３ａの先端部とオー
バーラップしている。図面において、第１層目のポリシ
リコン３と第２層目のポリシリコン４とのオーバーラッ
プ部分にはハッチングを施した。In FIG. 3A, 1 is a light receiving element, 2 is a vertical register, and 3 is a first layer of polysilicon (1pol).
y) having a tooth-like portion 3a extending in a substantially band shape between the adjacent horizontal rows of the light receiving elements and extending downward in a comb-like manner between the light receiving elements adjacent to each other in the horizontal direction. Have. 4 is a second layer of polysilicon (2 poly)
Having a shape having a tooth-like portion 4a extending in a substantially band shape between the adjacent horizontal rows of light receiving elements and extending upward in a comb-tooth manner between the light receiving elements adjacent in each horizontal direction. ing. The tip of the tooth 4a overlaps with the tip of the tooth 3a of the transfer electrode 3 made of the first layer of polysilicon. In the drawing, the overlapping portion between the first-layer polysilicon 3 and the second-layer polysilicon 4 is hatched.
【０００４】図３（Ｂ）は従来におけるフィールド読み
出し方式による読み出し動作時の４相垂直転送パルスＶ
１〜Ｖ４のタイミングチャートであり、左はオッドフィ
ールドの場合を、右はイーブンフィールドの場合を示
す。受光素子１から垂直レジスタ２への読み出しはオッ
ドフィールドでもイーブンフィールドでも図３（Ｂ）の
と、の時に行われる。FIG. 3B shows a four-phase vertical transfer pulse V at the time of a read operation according to a conventional field read method.
5 is a timing chart of 1 to V4, where the left shows the case of odd field and the right shows the case of even field. Reading from the light receiving element 1 to the vertical register 2 is performed at the time shown in FIG.
【０００５】即ち、Ｖ１のパルスによりの時に通常の
転送電圧よりも適宜高い読み出し電圧Ｖｔを受けた転送
電極４により受光素子１から垂直レジスタ２へ信号電荷
が読み出される。次に、Ｖ３のパルスによりの時に、
上記受光素子１と信号電荷の加算がされるべき隣接（垂
直方向に隣接）受光素子１から垂直レジスタ２への読み
出しが為される。そして、の時にその二つの受光素子
１・１からの信号電荷の混合（ＭＩＸ）が行われる。図
４は図３（Ｂ）における各時点〜での電荷の状態を
示すもので、左はオッドフィールドを、右はイーブンフ
ィールドを示す。That is, the signal charge is read from the light receiving element 1 to the vertical register 2 by the transfer electrode 4 which receives the read voltage Vt higher than the normal transfer voltage at the time of the pulse of V1. Next, at the time of the pulse of V3,
Reading is performed from the light receiving element 1 adjacent to the light receiving element 1 to be added with the signal charge (adjacent in the vertical direction) to the vertical register 2. At the time, mixing (MIX) of the signal charges from the two light receiving elements 1 is performed. FIG. 4 shows the state of the electric charge at each time point in FIG. 3 (B). The left side shows the odd field, and the right side shows the even field.
【０００６】図３（Ｂ）から明らかなように、読み出し
を為すべく通常の転送電圧よりも高い読み出し電圧Ｖｔ
を印加されるのは４相垂直転送パルスＶ１〜Ｖ４のうち
のパルスＶ１とＶ３に限られており、これは第２層目の
ポリシリコン４からなる垂直転送電極である。即ち、従
来においては、第２層目のポリシリコン４からなる垂直
転送のみが読み出しに寄与し、第１層目のポリシリコン
３からなる垂直転送電極は読み出しには寄与していなか
った。As is apparent from FIG. 3B, a read voltage Vt higher than a normal transfer voltage for reading data is used.
Is limited to the pulses V1 and V3 of the four-phase vertical transfer pulses V1 to V4, which are vertical transfer electrodes made of the second-layer polysilicon 4. That is, in the related art, only the vertical transfer made of the second-layer polysilicon 4 contributes to reading, and the vertical transfer electrode made of the first-layer polysilicon 3 does not contribute to reading.
【０００７】[0007]
【発明が解決しようとする課題】ところで、従来におい
ては、図３（Ｂ）に示すように、第２層目のポリシリコ
ン４からなる垂直転送のみが読み出しに寄与し、第１層
目のポリシリコン３からなる垂直転送電極は読み出しに
は寄与していなかったので、読み出しは第２層目のポリ
シリコン４の歯状部４ａの歯状部３ａとオーバーラップ
しない部分下において行われ、読み出しゲートにおける
実効的幅は図３（Ａ）において５で示す大きさになり、
受光素子１の縦の長さよりもかなり小さい。In the prior art, as shown in FIG. 3B, only the vertical transfer composed of the second-layer polysilicon 4 contributes to reading, and the first-layer polysilicon does not. Since the vertical transfer electrode made of silicon 3 did not contribute to the reading, the reading was performed under a portion of the second-layer polysilicon 4 which did not overlap with the tooth 3a of the tooth 4a, and the read gate The effective width at is the size indicated by 5 in FIG.
It is considerably smaller than the vertical length of the light receiving element 1.
【０００８】元来、読み出しゲートの実効幅が小さい
程、読み出しに必要なゲート電圧は高くなる。しかし、
固体撮像素子においては低消費電力化の要求が強く、そ
のため、電源電圧の低減の必要性があり、それに伴って
読み出し電圧Ｖｔの低電圧化が必要となっているが、読
み出しゲートの実効幅５が短いということはその読み出
し電圧Ｖｔの低電圧化を阻む要因となるのである。その
読み出しゲートの実効幅５が短いのに無理に読み出し電
圧Ｖｔを低くすると、読み出し不良が生じ、受光素子１
内に読み残し電荷が生じ、画面上でその受光素子に当た
る部分が黒くなる傾向が生じ、正常な画像を作ることが
できないという現象が生じることになる。Originally, the smaller the effective width of the read gate, the higher the gate voltage required for read. But,
In solid-state imaging devices, there is a strong demand for lower power consumption. For this reason, there is a need to reduce the power supply voltage. Accordingly, it is necessary to lower the read voltage Vt. Is a factor that prevents the read voltage Vt from lowering. If the read voltage Vt is forcibly reduced while the effective width 5 of the read gate is short, a read failure occurs and the light receiving element 1
Unread charges are generated in the image, and a portion corresponding to the light receiving element on the screen tends to be blackened, and a phenomenon that a normal image cannot be formed occurs.
【０００９】本発明はこのような問題点を解決すべく為
されたものであり、読み出し電圧を読み残しのおそれを
伴うことなく低くできるようにすることを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and has as its object to reduce the read voltage without causing the risk of unread data.
【００１０】[0010]
【課題を解決するための手段】請求項１のＣＣＤ固体撮
像素子は、各受光素子から垂直レジスタへの信号の読み
出しを読み出しに係る転送電極の第１層の電極層と第２
層の電極層の両方に読み出し電圧を印加して為すように
してなることを特徴とする。According to a first aspect of the present invention, there is provided a CCD solid-state imaging device wherein a first electrode layer and a second electrode of a transfer electrode for reading a signal from each light receiving element to a vertical register are read.
The read voltage is applied to both of the electrode layers.
【００１１】従って、請求項１のＣＣＤ固体撮像素子に
よれば、第１層の電極層の歯状部と、第２層の電極層の
歯状部が共に、読み出し電圧を受けて読み出しに寄与す
るので、受光素子の縦の辺の長さが略読み出しゲート実
効幅になり、読み出しゲート実効幅を従来よりも長くす
ることができる。従って、読み出しに必要な読み出し電
圧の高さを従来よりも低くすることができる。Therefore, according to the CCD solid-state imaging device of the first aspect, both the teeth of the first electrode layer and the teeth of the second electrode layer receive the read voltage and contribute to the read. Therefore, the length of the vertical side of the light receiving element becomes substantially equal to the effective width of the read gate, and the effective width of the read gate can be made longer than before. Therefore, the height of the read voltage required for reading can be made lower than before.
【００１２】[0012]
【発明の実施の形態】本発明ＣＣＤ固体撮像素子は、基
本的には、インターライン型或いはフレームインターラ
イン型固体撮像素子一般に適用することができる。第１
の電極層、第２の電極層は一般にポリシリコンにより形
成されるが、必ずしもそれに限定されるものではない。
また、本発明はフィールド読み出し方式にもフレーム読
み出しにも適用できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The CCD solid-state imaging device of the present invention can be basically applied to general interline or frame interline solid-state imaging devices. First
The electrode layer and the second electrode layer are generally formed of polysilicon, but are not necessarily limited thereto.
The present invention can be applied to both the field readout method and the frame readout method.
【００１３】[0013]
【実施例】以下、本発明を図示実施例に従って詳細に説
明する。図１（Ａ）、（Ｂ）は本発明ＣＣＤ固体撮像素
子の第１の実施例を示すもので、（Ａ）は平面図、
（Ｂ）はフィールド読み出し方式による読み出し時の各
垂直転送パルスＶ１〜Ｖ４のタイミングチャートであ
り、上はオッドフィールドの場合を、下はイーブンフィ
ールドの場合を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the illustrated embodiments. 1A and 1B show a first embodiment of a CCD solid-state imaging device according to the present invention, wherein FIG.
(B) is a timing chart of each vertical transfer pulse V1 to V4 at the time of reading by the field reading method. The upper part shows the case of the odd field, and the lower part shows the case of the even field.
【００１４】１は受光素子、２は垂直レジスタ、３は第
１層目のポリシリコン（１ｐｏｌｙ）からなる転送電極
で、各隣接受光素子水平列間上を略帯状に延び且つ各水
平方向に隣接する各受光素子間上毎に下方に櫛歯状に延
びる歯状部３ａのある形状を有している。４は第２層目
のポリシリコン（２ｐｏｌｙ）からなる転送電極で、各
隣接受光素子水平列間上を略帯状に延び且つ各水平方向
に隣接する各受光素子間上毎に上方に櫛歯状に延びる歯
状部４ａのある形状を有している。この歯状部４ａはそ
の先端部が第１層目のポリシリコンからなる転送電極３
の歯状部３ａの先端部とオーバーラップしている。図面
において、第１層目のポリシリコン３と第２層目のポリ
シリコン４とのオーバーラップ部分にはハッチングを施
した。尚、ＣＣＤ固体撮像素子の構造は基本的に図３に
示す従来のＣＣＤ固体撮像素子の構造と異なるところは
ない。Reference numeral 1 denotes a light receiving element, 2 denotes a vertical register, and 3 denotes a transfer electrode made of a first layer of polysilicon (1 poly). The transfer electrode extends in a substantially band shape between horizontal rows of adjacent light receiving elements and is adjacent to each other in the horizontal direction. Each light receiving element has a tooth-like portion 3a extending in a comb-like shape downward at each upper position. Reference numeral 4 denotes a transfer electrode made of a second layer of polysilicon (2 poly), which extends in a substantially band shape between the adjacent horizontal rows of the light receiving elements, and has a comb-like shape in the upward direction for each of the adjacent light receiving elements in the horizontal direction. Has a shape having a tooth-like portion 4a extending therethrough. The tooth-shaped portion 4a has a tip portion formed of a first-layer polysilicon transfer electrode 3.
Overlaps with the tip of the toothed portion 3a. In the drawing, the overlapping portion between the first-layer polysilicon 3 and the second-layer polysilicon 4 is hatched. The structure of the CCD solid-state imaging device is basically the same as that of the conventional CCD solid-state imaging device shown in FIG.
【００１５】次に、読み出し動作について図１（Ｂ）に
従って説明すると、オッドフィールドについては、の
時にＶ１とＶ４が読み出し電圧Ｖｔを受けることにより
垂直方向に数えて例えば奇数番目の受光素子１が読み出
される。このとき、第２層目のポリシリ４からなる垂直
転送電極（の歯状部４ａ）のみならず、第１層目のポリ
シリコン３からなる垂直転送電極（の歯状部３ａ）も読
み出しに寄与するのであり、従って、その受光素子１の
縦の辺全部を通じて垂直レジスタ２への読み出しが為さ
れ、読み出しゲート実効幅は６となり、実効幅６は従来
に比較して広い。その読み出された信号電荷は及び
の時に垂直方向に転送される。Next, the reading operation will be described with reference to FIG. 1B. In the odd field, for example, the odd-numbered light receiving elements 1 are read out by counting in the vertical direction by receiving the read voltage Vt at V1 and V4. It is. At this time, not only the vertical transfer electrode (tooth portion 4a) of the second layer polysilicon 4 but also the vertical transfer electrode (tooth portion 3a) of the first layer polysilicon 3 contributes to reading. Therefore, the reading to the vertical register 2 is performed through all the vertical sides of the light receiving element 1, and the effective width of the read gate becomes 6, and the effective width 6 is wider than that of the related art. The read signal charges are transferred in the vertical direction at and.
【００１６】そして、の時に、Ｖ２とＶ３が読み出し
電圧Ｖｔを受けることにより垂直方向に数えて例えば偶
数番目の受光素子１が読み出される。このとき、第２層
目のポリシリ４からなる垂直転送電極（の歯状部４ａ）
のみならず、第１層目のポリシリコン３からなる垂直転
送電極（の歯状部３ａ）も読み出しに寄与するのであ
り、従って、その受光素子１の縦の辺全部を通じて垂直
レジスタ２への読み出しが為され、読み出しゲート実効
幅は６となり、その実効幅６は従来に比較して広いこと
前述の通りである。そして、この読み出しの時に、の
時既に読み出され、、の時に転送されてきた信号電
荷と、の時に読み出した信号電荷との混合、即ち２画
素分の信号電荷の混合を行う。At this time, the even-numbered light receiving elements 1 counted in the vertical direction are read out by receiving the read voltage Vt at V2 and V3. At this time, the vertical transfer electrode (tooth portion 4a) made of the second-layer polysilicon 4
In addition, the vertical transfer electrode (toothed portion 3a) made of the first-layer polysilicon 3 also contributes to the readout. Therefore, the readout to the vertical register 2 through the entire vertical side of the light receiving element 1 is performed. As described above, the effective width of the read gate is 6, and the effective width 6 is wider than that of the related art. Then, at the time of this readout, the signal charges already read at the time and transferred at the time and the signal charges read at the time are mixed, that is, the signal charges for two pixels are mixed.
【００１７】尚、イーブンフィールドについても同様で
ある。違うのは、の時には、Ｖ２とＶ３が読み出し電
圧Ｖｔになり、の時にはＶ１、Ｖ４が読み出し電圧Ｖ
ｔになることであり、オッドフィールドと逆になる（オ
ッドフィールドでは、の時Ｖ１、Ｖ４が読み出し電圧
Ｖｔになり、の時Ｖ２、Ｖ３が読み出し電圧Ｖｔにな
る。）点のみである。図２は読み出しによる図１の〜
の各時点の電荷の状態を示すものであり、左はオッド
フィールドの場合を、右はイーブンフィールドの場合を
示す。The same applies to the even field. The difference is that at the time, V2 and V3 become the read voltage Vt, and at the time, V1 and V4 become the read voltage Vt.
t, which is the reverse of the odd field (in the odd field, V1 and V4 become the read voltage Vt at that time, and V2 and V3 become the read voltage Vt at the time). FIG. 2 is a view of FIG.
5 shows the state of the charge at each time point, where the left shows the case of the odd field and the right shows the case of the even field.
【００１８】尚、オッドフィールドでＶ１、Ｖ４に読み
出し電圧Ｖｔを加え、イーブンフィールドでＶ２、Ｖ３
に読み出し電圧Ｖｔを加えるようにして、フレーム読み
出しをするようにすることもできる。即ち、本発明はフ
レーム読み出し型ＣＣＤ固体撮像素子にも適用できる。The read voltage Vt is added to V1 and V4 in the odd field, and V2 and V3 in the even field.
The frame reading can be performed by applying the reading voltage Vt to the frame. That is, the present invention can be applied to a frame readout type CCD solid-state imaging device.
【００１９】本ＣＣＤ固体撮像素子によれば、上述のよ
うに、第２層目のポリシリ４からなる垂直転送電極（の
歯状部４ａ）のみならず、第１層目のポリシリコン３か
らなる垂直転送電極（の歯状部３ａ）も読み出しに寄与
するようにできるので、その受光素子１の縦の辺全部を
通じて垂直レジスタ２への読み出しが為されるようにな
り、読み出しゲート実効幅は６となる。従って、実効幅
６は従来に比較して広くできる。依って、そのゲート実
効幅６を広くできた分読み出し電圧Ｖｔを従来よりも低
くて済む。According to the present CCD solid-state imaging device, as described above, not only the vertical transfer electrode (toothed portion 4a) of the second layer of polysilicon 4 but also the first layer of polysilicon 3 is formed. Since the vertical transfer electrode (toothed portion 3a) can also contribute to the reading, the reading to the vertical register 2 is performed through the entire vertical side of the light receiving element 1, and the effective read gate width is 6 Becomes Therefore, the effective width 6 can be made wider than in the conventional case. Therefore, the read voltage Vt can be lower than that of the related art because the gate effective width 6 can be increased.
【００２０】[0020]
【発明の効果】本発明ＣＣＤ固体撮像素子によれば、第
１層の電極層の歯状部と、第２層の電極層の歯状部が共
に、読み出し電圧を受けて読み出しに寄与するので、受
光素子の縦の辺の長さが略読み出しゲート実効幅にな
り、読み出しゲート実効幅を従来よりも長くすることが
できる。従って、読み出しに必要な読み出し電圧の高さ
を従来よりも低くすることができる。According to the CCD solid-state imaging device of the present invention, the teeth of the first electrode layer and the teeth of the second electrode layer both receive a read voltage and contribute to reading. The length of the vertical side of the light receiving element is substantially equal to the effective read gate width, and the effective read gate width can be made longer than before. Therefore, the height of the read voltage required for reading can be made lower than before.
【図１】（Ａ）、（Ｂ）は本発明ＣＣＤ固体撮像素子の
一つの実施例を示すもので、（Ａ）は平面図、（Ｂ）は
フィールド読み出し方式による読み出し時の各垂直転送
パルスＶ１〜Ｖ４のタイミングチャートであり、上はオ
ッドフィールドの場合を、下はイーブンフィールドの場
合を示す。FIGS. 1A and 1B show one embodiment of a CCD solid-state imaging device according to the present invention, in which FIG. 1A is a plan view, and FIG. 1B is each vertical transfer pulse at the time of reading by a field reading method. It is a timing chart of V1 to V4, where the upper part shows the case of odd field and the lower part shows the case of even field.
【図２】読み出しによる図１の〜の各時点の電荷の
状態を示すものであり、左はオッドフィールドの場合
を、右はイーブンフィールドの場合を示す。FIG. 2 shows the state of the electric charge at each time point of FIG. 1 through readout, wherein the left side shows the case of the odd field and the right side shows the case of the even field.
【図３】（Ａ）、（Ｂ）はＣＣＤ固体撮像素子の従来例
を説明するためのもので、（Ａ）は平面図、（Ｂ）はフ
ィールド読み出し方式による読み出し時の各垂直転送パ
ルスＶ１〜Ｖ４のタイミングチャートであり、上はオッ
ドフィールドの場合を、下はイーブンフィールドの場合
を示す。FIGS. 3A and 3B are diagrams for explaining a conventional example of a CCD solid-state imaging device, in which FIG. 3A is a plan view, and FIG. 3B is each vertical transfer pulse V1 at the time of reading by a field reading method. FIG. 4 is a timing chart of V4, wherein the upper part shows the case of odd field and the lower part shows the case of even field.
【図４】読み出しによる図３の〜の各時点の電荷の
状態を示すものであり、左はオッドフィールドの場合
を、右はイーブンフィールドの場合を示す。FIG. 4 shows the state of the electric charge at each time point of FIG. 3 through reading, where the left side shows the case of the odd field and the right side shows the case of the even field.
１・・・受光素子、２・・・垂直レジスタ、３・・・第
１層目の電極層（１ｐｏｌｙ）、４・・・第２層目の電
極層（２ｐｏｌｙ）、６・・・読み出しゲート実効幅。DESCRIPTION OF SYMBOLS 1 ... Light receiving element, 2 ... Vertical register, 3 ... 1st electrode layer (1poly), 4 ... 2nd electrode layer (2poly), 6 ... Read gate Effective width.
Claims (2)
クス状に配置し、各隣接受光素子垂直列間に垂直レジス
タを配置し、上記半導体基板上に上記垂直レジスタを転
送駆動する、２層の電極層からなり、垂直方向の１画素
あたり２極の転送電極を配置してなり、該転送電極の第
１層（下層）の電極層が各隣接受光素子水平列間上を略
帯状に延び且つ各水平方向に隣接する各受光素子間上毎
に上下いずれか一方に櫛歯状に延びる歯状部を有する形
状を有し、同じく第２層（上層）の電極層が第１層の電
極層に略オーバーラップするように各隣接受光素子水平
列間上を略帯状に延び且つ各水平方向に隣接する各受光
素子間上毎に上下のうちの他方に櫛歯状に延びて第１層
の電極層の歯状部の先端部に先端部にてオーバラップす
る歯状部を有し、４相駆動パルスにより垂直転送が為さ
れるようにしたＣＣＤ固体撮像素子において、 各受光素子から垂直レジスタへの信号の読み出しを、第
１層の電極層と第２層の電極層の両方の読み出しに係る
転送電極に読み出し電圧を印加することにより、為すよ
うにしてなることを特徴とするＣＣＤ固体撮像素子。1. A two-layer electrode for arranging light receiving elements in a matrix on the surface of a semiconductor substrate, arranging vertical registers between vertical columns of adjacent light receiving elements, and transferring and driving the vertical registers on the semiconductor substrate. And two transfer electrodes are arranged per pixel in the vertical direction. The first (lower) electrode layer of the transfer electrodes extends in a substantially band-like manner between the adjacent horizontal rows of the light receiving elements. Each of the light-receiving elements adjacent in the horizontal direction has a comb-like shape having a comb-like portion on one of the upper and lower sides, and the second (upper) electrode layer is also used as the first electrode layer. The electrodes of the first layer extend in a substantially strip shape over the adjacent horizontal rows of the light receiving elements so as to substantially overlap, and extend in the form of a comb tooth on the other of the upper and lower sides between the light receiving elements adjacent in the horizontal direction. A tooth portion overlapping at the tip portion with the tip portion of the tooth portion of the layer; In a CCD solid-state imaging device in which vertical transfer is performed by a phase driving pulse, reading of a signal from each light receiving element to a vertical register is performed by reading both the first electrode layer and the second electrode layer. A CCD solid-state imaging device characterized in that a read voltage is applied to such a transfer electrode to perform the operation.
し終了時には各垂直方向隣接受光素子からの信号電荷の
混合が完了するしているようにしてなることを特徴とす
るＣＣＤ固体撮像素子。2. A CCD solid-state imaging device, wherein mixing of signal charges from each vertically adjacent light receiving element is completed at the end of reading in a field reading mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10330500A JP2000156489A (en) | 1998-11-20 | 1998-11-20 | Ccd solid state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10330500A JP2000156489A (en) | 1998-11-20 | 1998-11-20 | Ccd solid state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000156489A true JP2000156489A (en) | 2000-06-06 |
Family
ID=18233328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10330500A Pending JP2000156489A (en) | 1998-11-20 | 1998-11-20 | Ccd solid state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000156489A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261322A (en) * | 2005-03-16 | 2006-09-28 | Jsr Corp | Electromagnetic wave shield film and its manufacturing method |
| CN100463206C (en) * | 2005-04-26 | 2009-02-18 | 松下电器产业株式会社 | Solid state imaging device |
-
1998
- 1998-11-20 JP JP10330500A patent/JP2000156489A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261322A (en) * | 2005-03-16 | 2006-09-28 | Jsr Corp | Electromagnetic wave shield film and its manufacturing method |
| CN100463206C (en) * | 2005-04-26 | 2009-02-18 | 松下电器产业株式会社 | Solid state imaging device |
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