JP2000150557A5 - - Google Patents

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Publication number
JP2000150557A5
JP2000150557A5 JP1998324125A JP32412598A JP2000150557A5 JP 2000150557 A5 JP2000150557 A5 JP 2000150557A5 JP 1998324125 A JP1998324125 A JP 1998324125A JP 32412598 A JP32412598 A JP 32412598A JP 2000150557 A5 JP2000150557 A5 JP 2000150557A5
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JP
Japan
Prior art keywords
terminals
electrode pads
bumps
main surface
plating
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Pending
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JP1998324125A
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Japanese (ja)
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JP2000150557A (en
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Priority to JP10324125A priority Critical patent/JP2000150557A/en
Priority claimed from JP10324125A external-priority patent/JP2000150557A/en
Publication of JP2000150557A publication Critical patent/JP2000150557A/en
Publication of JP2000150557A5 publication Critical patent/JP2000150557A5/ja
Pending legal-status Critical Current

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Description

【発明の名称】半導体装置およびその実装構造体並びに半導体装置の製造方法Patent application title: SEMICONDUCTOR DEVICE, MOUNTING STRUCTURE THEREOF, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

【図6】半田バンプ形成工程を示しており、(a)は半田ボール供給作業を示す拡大部分正面断面図、(b)は半田バンプ形成工程後を示す拡大部分正面断面図である。6A and 6B show a solder bump formation process, wherein FIG. 6A is an enlarged partial front sectional view showing a solder ball supply operation, and FIG. 6B is an enlarged partial front sectional view showing a solder bump formation process;

Claims (5)

半導体チップの第一主面に形成された複数個の電極パッドと、前記複数個の電極パッドそれぞれに接続され、めっき処理によって形成された複数の端子と、前記複数の端子それぞれの一部を露出するように前記第一主面上を覆う樹脂封止膜と、前記樹脂封止膜で覆われない前記複数の端子それぞれの一部に接続する複数のバンプとを有することを特徴とする半導体装置。A plurality of electrode pads formed on the first main surface of the semiconductor chip, a plurality of terminals connected to each of the plurality of electrode pads, and formed by plating, and a portion of each of the plurality of terminals are exposed And a plurality of bumps connected to portions of the plurality of terminals not covered by the resin sealing film. . 前記複数の端子は、銅から成ることを特徴とする請求項1に記載の半導体装置。The semiconductor device according to claim 1, wherein the plurality of terminals are made of copper . 前記複数のバンプは、半田バンプから成ることを特徴とする請求項1に記載の半導体装置。The semiconductor device according to claim 1 , wherein the plurality of bumps comprise solder bumps . 半導体チップの第一主面に形成された複数個の電極パッドと、前記複数個の電極パッドそれぞれに接続され、めっき処理によって形成された複数の端子と、前記複数の端子それぞれの一部を露出するように前記第一主面上を覆う樹脂封止膜と、前記樹脂封止膜で覆われない前記複数の端子それぞれの一部に接続する複数のバンプとを有する半導体装置が、実装基板上にリフロー半田付けされていることを特徴とする実装構造体。A plurality of electrode pads formed on the first main surface of the semiconductor chip, a plurality of terminals connected to each of the plurality of electrode pads, and formed by plating, and a portion of each of the plurality of terminals are exposed A semiconductor device having a resin sealing film covering the first main surface and a plurality of bumps connected to a part of each of the plurality of terminals not covered by the resin sealing film is mounted on the mounting substrate. A mounting structure characterized by being reflow-soldered. 第一主面に形成された複数の集積回路と複数の電極パッドとを有する半導体ウエハの前記複数の電極パッドそれぞれに接続される複数の端子をめっき処理によって形成する工程と、Forming a plurality of terminals connected to each of the plurality of electrode pads of the semiconductor wafer having a plurality of integrated circuits formed on the first main surface and a plurality of electrode pads by plating;
前記半導体ウエハの第一主面上および前記複数の端子上を樹脂膜によって覆う工程と、  Covering the first main surface of the semiconductor wafer and the plurality of terminals with a resin film;
前記樹脂膜を研磨して前記複数の端子それぞれの一部を露出する工程と、  Polishing the resin film to expose a part of each of the plurality of terminals;
前記露出された複数の端子それぞれに接続する複数のバンプを形成する工程と、  Forming a plurality of bumps connected to each of the plurality of exposed terminals;
前記複数のバンプが形成された半導体ウエハをダイシングにより複数のチップに分割する工程とを有することを特徴とする半導体装置の製造方法。  And d) dividing the semiconductor wafer on which the plurality of bumps are formed into a plurality of chips by dicing.
JP10324125A 1998-11-13 1998-11-13 Semiconductor device and manufacture thereof Pending JP2000150557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10324125A JP2000150557A (en) 1998-11-13 1998-11-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10324125A JP2000150557A (en) 1998-11-13 1998-11-13 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JP2000150557A JP2000150557A (en) 2000-05-30
JP2000150557A5 true JP2000150557A5 (en) 2004-10-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP10324125A Pending JP2000150557A (en) 1998-11-13 1998-11-13 Semiconductor device and manufacture thereof

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JP (1) JP2000150557A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881389B1 (en) 2002-12-26 2009-02-05 주식회사 하이닉스반도체 Method for packaging semiconductor device
JP2004273591A (en) * 2003-03-06 2004-09-30 Seiko Epson Corp Semiconductor device and its fabricating process
JP4057017B2 (en) 2005-01-31 2008-03-05 富士通株式会社 Electronic device and manufacturing method thereof
JP4566915B2 (en) * 2006-01-10 2010-10-20 大日本印刷株式会社 Semiconductor device mounting body and method of manufacturing semiconductor device mounting body
US8742603B2 (en) 2010-05-20 2014-06-03 Qualcomm Incorporated Process for improving package warpage and connection reliability through use of a backside mold configuration (BSMC)
US8461676B2 (en) 2011-09-09 2013-06-11 Qualcomm Incorporated Soldering relief method and semiconductor device employing same
JP6635328B2 (en) 2014-11-10 2020-01-22 ローム株式会社 Semiconductor device and method of manufacturing the same

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