IT987474B - Circuito di memoria con transi stor ad effetto di campo - Google Patents

Circuito di memoria con transi stor ad effetto di campo

Info

Publication number
IT987474B
IT987474B IT2413773A IT2413773A IT987474B IT 987474 B IT987474 B IT 987474B IT 2413773 A IT2413773 A IT 2413773A IT 2413773 A IT2413773 A IT 2413773A IT 987474 B IT987474 B IT 987474B
Authority
IT
Italy
Prior art keywords
field effect
memory circuit
transi stor
transi
stor
Prior art date
Application number
IT2413773A
Other languages
English (en)
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co filed Critical Nippon Electric Co
Application granted granted Critical
Publication of IT987474B publication Critical patent/IT987474B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
IT2413773A 1972-05-16 1973-05-15 Circuito di memoria con transi stor ad effetto di campo IT987474B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4887672A JPS5240937B2 (it) 1972-05-16 1972-05-16

Publications (1)

Publication Number Publication Date
IT987474B true IT987474B (it) 1975-02-20

Family

ID=12815473

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2413773A IT987474B (it) 1972-05-16 1973-05-15 Circuito di memoria con transi stor ad effetto di campo

Country Status (5)

Country Link
JP (1) JPS5240937B2 (it)
DE (1) DE2324769C3 (it)
FR (1) FR2184865B1 (it)
GB (1) GB1438861A (it)
IT (1) IT987474B (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011632A (it) * 1973-06-01 1975-02-06
US3964030A (en) * 1973-12-10 1976-06-15 Bell Telephone Laboratories, Incorporated Semiconductor memory array
US3969706A (en) 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
JPS51142925A (en) 1975-06-04 1976-12-08 Hitachi Ltd Address buffer circuit
JPS51163830U (it) * 1975-06-20 1976-12-27
JPS5284929A (en) * 1976-01-07 1977-07-14 Hitachi Ltd Memory system
JPS52106640A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Memory peripheral circuit
US4042915A (en) * 1976-04-15 1977-08-16 National Semiconductor Corporation MOS dynamic random access memory having an improved address decoder circuit
DE2760461C2 (de) * 1976-06-01 1994-04-21 Texas Instruments Inc Schaltungsanordnung für einen Halbleiterspeicher
JPS5810799B2 (ja) 1976-06-01 1983-02-28 テキサス インスツルメンツ インコ−ポレイテツド 半導体記憶装置
JPS5325323A (en) * 1976-08-23 1978-03-09 Hitachi Ltd Pre-sense amplifier
JPS5360125A (en) * 1976-11-11 1978-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory unit
JPS5453652A (en) * 1977-10-07 1979-04-27 Denyo Co Ltd Battery welder
JPH0124644Y2 (it) * 1979-08-28 1989-07-26
US4539661A (en) * 1982-06-30 1985-09-03 Fujitsu Limited Static-type semiconductor memory device
JPS5956292A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd 半導体記憶装置
JPS6075510A (ja) * 1983-09-30 1985-04-27 Mitsubishi Heavy Ind Ltd 連続製鋼炉における冷材スクラツプの供給方法
JPS60242593A (ja) * 1984-05-16 1985-12-02 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPH0736273B2 (ja) * 1984-11-26 1995-04-19 株式会社日立製作所 半導体集積回路
DE3745016C2 (de) * 1986-11-11 1996-01-18 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
JP2511910B2 (ja) * 1986-11-11 1996-07-03 三菱電機株式会社 半導体記憶装置
JPS63275093A (ja) * 1987-05-06 1988-11-11 Nec Corp 半導体記憶装置
US4926387A (en) * 1988-12-27 1990-05-15 Intel Corporation Memory timing circuit employing scaled-down models of bit lines using reduced number of memory cells
KR100296964B1 (ko) * 1999-06-28 2001-11-01 박종섭 패킷 명령어 구동형 메모리소자
GB2360113B (en) * 2000-03-08 2004-11-10 Seiko Epson Corp Dynamic random access memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1100461A (en) * 1963-10-02 1968-01-24 Automatic Telephone & Elect Improvements in or relating to magnetic core matrix data storage devices

Also Published As

Publication number Publication date
DE2324769A1 (de) 1973-12-06
JPS4914052A (it) 1974-02-07
JPS5240937B2 (it) 1977-10-15
GB1438861A (en) 1976-06-09
DE2324769C3 (de) 1987-07-09
DE2324769B2 (de) 1978-12-21
FR2184865B1 (it) 1980-03-07
FR2184865A1 (it) 1973-12-28

Similar Documents

Publication Publication Date Title
IT987474B (it) Circuito di memoria con transi stor ad effetto di campo
AT309113B (de) Assoziativspeicher
AT307753B (de) Elastomerer Film
IT962927B (it) Transistore ad effetto di campo
IT990432B (it) Circuito bistabile che utilizza transistor con effetto di campo a griglia isolata
BR6914646D0 (pt) Dispositivo de memoria com efeito de campo
BR7304182D0 (pt) Circuito amplificador de transistor
IT953475B (it) Circuito di alimentazione di poten za particolarmente utile in tele fonia
IT1021494B (it) Circuito di memorizzazione associativo
IT990205B (it) Circuito a transistori
IT994173B (it) Sistemazione di circuito logico che usa transistor i g detti anche transistor ad effetto di campo a griglia isolata
IT1015566B (it) Circuito di memoria
BR7208403D0 (pt) Circuito processador desinais
IT980643B (it) Circuito logico rivelatore di se quenza
IT978033B (it) Circuito integrato
IT1009962B (it) Circuito logico transistore transistore modificato
IT984114B (it) Circuito di protezione
BR7308817D0 (pt) Circuito amplificador
IT1022332B (it) Dispositivo con transistori a effetto di campo
IT984886B (it) Circuito di decodificazione
AT348589B (de) Feldeffekttransistor
CH492305A (de) Dünnschicht-Feldeffekttransistor
IT999216B (it) Circuito logico con elemento di carico comune
AT376845B (de) Speicher-feldeffekttransistor
IT979129B (it) Circuito di arresto di soneria