IT1401748B1 - Transistori ad alta mobilita' elettronica con elettrodo di field plate - Google Patents
Transistori ad alta mobilita' elettronica con elettrodo di field plateInfo
- Publication number
- IT1401748B1 IT1401748B1 ITTO2010A000670A ITTO20100670A IT1401748B1 IT 1401748 B1 IT1401748 B1 IT 1401748B1 IT TO2010A000670 A ITTO2010A000670 A IT TO2010A000670A IT TO20100670 A ITTO20100670 A IT TO20100670A IT 1401748 B1 IT1401748 B1 IT 1401748B1
- Authority
- IT
- Italy
- Prior art keywords
- field plate
- plate electrode
- electronic transistors
- mobility electronic
- mobility
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000670A IT1401748B1 (it) | 2010-08-02 | 2010-08-02 | Transistori ad alta mobilita' elettronica con elettrodo di field plate |
EP11760849.7A EP2601680B1 (en) | 2010-08-02 | 2011-08-02 | High electron mobility transistors with field plate electrode |
US13/813,337 US9577064B2 (en) | 2010-08-02 | 2011-08-02 | High electron mobility transistors with field plate electrode |
PCT/IB2011/053439 WO2012017390A1 (en) | 2010-08-02 | 2011-08-02 | High electron mobility transistors with field plate electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITTO2010A000670A IT1401748B1 (it) | 2010-08-02 | 2010-08-02 | Transistori ad alta mobilita' elettronica con elettrodo di field plate |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20100670A1 ITTO20100670A1 (it) | 2012-02-03 |
IT1401748B1 true IT1401748B1 (it) | 2013-08-02 |
Family
ID=43589507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITTO2010A000670A IT1401748B1 (it) | 2010-08-02 | 2010-08-02 | Transistori ad alta mobilita' elettronica con elettrodo di field plate |
Country Status (4)
Country | Link |
---|---|
US (1) | US9577064B2 (it) |
EP (1) | EP2601680B1 (it) |
IT (1) | IT1401748B1 (it) |
WO (1) | WO2012017390A1 (it) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6075003B2 (ja) * | 2012-10-22 | 2017-02-08 | 富士通株式会社 | トランジスタの制御回路及び電源装置 |
US20150372096A1 (en) * | 2014-06-20 | 2015-12-24 | Ishiang Shih | High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications |
CN104409482B (zh) * | 2014-11-18 | 2017-02-22 | 西安电子科技大学 | GaN基T形源场板功率器件及其制作方法 |
US10756084B2 (en) * | 2015-03-26 | 2020-08-25 | Wen-Jang Jiang | Group-III nitride semiconductor device and method for fabricating the same |
FR3045939B1 (fr) * | 2015-12-22 | 2018-03-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de collage direct entre deux structures |
CN105931999B (zh) * | 2016-04-22 | 2018-06-26 | 西安电子科技大学 | 薄势垒增强型AlGaN/GaN高电子迁移率晶体管及其制作方法 |
CN105762184A (zh) * | 2016-04-27 | 2016-07-13 | 电子科技大学 | 一种具有半绝缘层的氮化镓基高电子迁移率晶体管 |
CN106298909A (zh) * | 2016-08-09 | 2017-01-04 | 电子科技大学 | 一种hemt器件 |
CN107395177B (zh) * | 2017-07-10 | 2020-05-19 | 东南大学 | 面向物联网的具有自供电功能的mesfet管放大器 |
CN110690281B (zh) * | 2018-07-05 | 2023-08-08 | 苏州捷芯威半导体有限公司 | 半导体器件及制造方法 |
CN112753104B (zh) * | 2018-10-03 | 2024-02-23 | 三菱电机株式会社 | 场效应晶体管 |
US11302786B2 (en) * | 2019-04-04 | 2022-04-12 | Hrl Laboratories Llc | Miniature field plate T-gate and method of fabricating the same |
CN115668506A (zh) * | 2020-05-25 | 2023-01-31 | 索尼半导体解决方案公司 | 半导体装置、半导体模块和电子设备 |
CN113253489A (zh) * | 2021-05-28 | 2021-08-13 | 重庆邮电大学 | 一种太赫兹多通道调制器及其制备方法 |
CN113594248B (zh) * | 2021-08-02 | 2023-04-25 | 电子科技大学 | 一种具有集成续流二极管的双异质结GaN HEMT器件 |
CN113809174B (zh) * | 2021-11-16 | 2022-03-11 | 深圳市时代速信科技有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0592064B1 (en) | 1992-08-19 | 1998-09-23 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a field effect transistor |
US6984853B2 (en) * | 2004-02-26 | 2006-01-10 | Agilent Technologies, Inc | Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection |
US8264003B2 (en) * | 2006-03-20 | 2012-09-11 | International Rectifier Corporation | Merged cascode transistor |
KR101033388B1 (ko) * | 2006-12-07 | 2011-05-09 | 가부시끼가이샤 도시바 | 반도체 장치 및 반도체 장치의 제조 방법 |
JP5358882B2 (ja) * | 2007-02-09 | 2013-12-04 | サンケン電気株式会社 | 整流素子を含む複合半導体装置 |
WO2008101989A1 (de) * | 2007-02-22 | 2008-08-28 | Forschungsverbund Berlin E.V. | Halbleiterbauelement und verfahren zu dessen herstellung |
JP4695622B2 (ja) * | 2007-05-02 | 2011-06-08 | 株式会社東芝 | 半導体装置 |
US7745849B2 (en) * | 2007-09-20 | 2010-06-29 | International Rectifier Corporation | Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain |
JP5487615B2 (ja) * | 2008-12-24 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
US8008977B2 (en) * | 2009-04-14 | 2011-08-30 | Triquint Semiconductor, Inc. | Field-plated transistor including feedback resistor |
-
2010
- 2010-08-02 IT ITTO2010A000670A patent/IT1401748B1/it active
-
2011
- 2011-08-02 WO PCT/IB2011/053439 patent/WO2012017390A1/en active Application Filing
- 2011-08-02 EP EP11760849.7A patent/EP2601680B1/en active Active
- 2011-08-02 US US13/813,337 patent/US9577064B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2601680B1 (en) | 2015-06-24 |
EP2601680A1 (en) | 2013-06-12 |
WO2012017390A1 (en) | 2012-02-09 |
US20130193487A1 (en) | 2013-08-01 |
US9577064B2 (en) | 2017-02-21 |
ITTO20100670A1 (it) | 2012-02-03 |
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