IT1199828B - Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit - Google Patents
Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bitInfo
- Publication number
- IT1199828B IT1199828B IT22800/86A IT2280086A IT1199828B IT 1199828 B IT1199828 B IT 1199828B IT 22800/86 A IT22800/86 A IT 22800/86A IT 2280086 A IT2280086 A IT 2280086A IT 1199828 B IT1199828 B IT 1199828B
- Authority
- IT
- Italy
- Prior art keywords
- bit
- polysilic
- cancellable
- writable
- memory cell
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22800/86A IT1199828B (it) | 1986-12-22 | 1986-12-22 | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
EP87202392A EP0272732B1 (en) | 1986-12-22 | 1987-12-02 | Eeprom memory cell with a single level of polysilicon writable and cancellable bit by bit |
DE8787202392T DE3780784T2 (de) | 1986-12-22 | 1987-12-02 | Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar. |
JP62317644A JPS63166274A (ja) | 1986-12-22 | 1987-12-17 | ビット毎に書込みおよび消去可能な単層ポリシリコン層を有するeepromメモリセル |
US07/136,652 US4935790A (en) | 1986-12-22 | 1987-12-22 | EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
US08/376,300 USRE37308E1 (en) | 1986-12-22 | 1995-01-23 | EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT22800/86A IT1199828B (it) | 1986-12-22 | 1986-12-22 | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8622800A0 IT8622800A0 (it) | 1986-12-22 |
IT1199828B true IT1199828B (it) | 1989-01-05 |
Family
ID=11200571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22800/86A IT1199828B (it) | 1986-12-22 | 1986-12-22 | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
Country Status (5)
Country | Link |
---|---|
US (1) | US4935790A (it) |
EP (1) | EP0272732B1 (it) |
JP (1) | JPS63166274A (it) |
DE (1) | DE3780784T2 (it) |
IT (1) | IT1199828B (it) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03206661A (ja) * | 1990-01-09 | 1991-09-10 | Fujitsu Ltd | 半導体装置 |
JP2933090B2 (ja) * | 1990-04-25 | 1999-08-09 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3083547B2 (ja) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
US5355007A (en) * | 1990-11-23 | 1994-10-11 | Texas Instruments Incorporated | Devices for non-volatile memory, systems and methods |
DE69018832T2 (de) * | 1990-12-31 | 1995-11-23 | Sgs Thomson Microelectronics | EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises. |
US5282161A (en) * | 1990-12-31 | 1994-01-25 | Sgs-Thomson Microelectronics S.R.L. | Eeprom cell having a read interface isolated from the write/erase interface |
US5217915A (en) * | 1991-04-08 | 1993-06-08 | Texas Instruments Incorporated | Method of making gate array base cell |
US5412599A (en) * | 1991-09-26 | 1995-05-02 | Sgs-Thomson Microelectronics, S.R.L. | Null consumption, nonvolatile, programmable switch |
JP3293893B2 (ja) * | 1991-12-09 | 2002-06-17 | 株式会社東芝 | 半導体不揮発性記憶装置の製造方法 |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
JP2663863B2 (ja) * | 1994-04-19 | 1997-10-15 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5753954A (en) * | 1996-07-19 | 1998-05-19 | National Semiconductor Corporation | Single-poly neuron MOS transistor |
US5719427A (en) * | 1997-01-14 | 1998-02-17 | Pericom Semiconductor Corp. | Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures |
US5885871A (en) * | 1997-07-31 | 1999-03-23 | Stmicrolelectronics, Inc. | Method of making EEPROM cell structure |
US6044018A (en) * | 1998-06-17 | 2000-03-28 | Mosel Vitelic, Inc. | Single-poly flash memory cell for embedded application and related methods |
JP3503538B2 (ja) * | 1999-08-20 | 2004-03-08 | セイコーエプソン株式会社 | 半導体記憶装置 |
EP1096575A1 (en) | 1999-10-07 | 2001-05-02 | STMicroelectronics S.r.l. | Non-volatile memory cell with a single level of polysilicon and corresponding manufacturing process |
EP1091408A1 (en) | 1999-10-07 | 2001-04-11 | STMicroelectronics S.r.l. | Non-volatile memory cell with a single level of polysilicon |
US6747308B2 (en) * | 2001-12-28 | 2004-06-08 | Texas Instruments Incorporated | Single poly EEPROM with reduced area |
KR100505107B1 (ko) * | 2003-01-08 | 2005-07-29 | 삼성전자주식회사 | 이이피롬 장치 |
JP2005353984A (ja) | 2004-06-14 | 2005-12-22 | Seiko Epson Corp | 不揮発性記憶装置 |
JP4591691B2 (ja) * | 2005-06-07 | 2010-12-01 | セイコーエプソン株式会社 | 半導体装置 |
JP4548603B2 (ja) | 2005-06-08 | 2010-09-22 | セイコーエプソン株式会社 | 半導体装置 |
JP2006344735A (ja) * | 2005-06-08 | 2006-12-21 | Seiko Epson Corp | 半導体装置 |
JP4665677B2 (ja) | 2005-09-09 | 2011-04-06 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4404032B2 (ja) * | 2005-09-09 | 2010-01-27 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP4613761B2 (ja) | 2005-09-09 | 2011-01-19 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
KR100667909B1 (ko) * | 2005-12-29 | 2007-01-11 | 매그나칩 반도체 유한회사 | 비휘발성 반도체 메모리 장치 |
US8040212B2 (en) * | 2009-07-22 | 2011-10-18 | Volterra Semiconductor Corporation | Low profile inductors for high density circuit boards |
JP5668905B2 (ja) * | 2009-09-07 | 2015-02-12 | セイコーNpc株式会社 | 不揮発性半導体メモリ |
US11282844B2 (en) * | 2018-06-27 | 2022-03-22 | Ememory Technology Inc. | Erasable programmable non-volatile memory including two floating gate transistors with the same floating gate |
US10846458B2 (en) | 2018-08-30 | 2020-11-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Engineering change order cell structure having always-on transistor |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7500550A (nl) * | 1975-01-17 | 1976-07-20 | Philips Nv | Halfgeleider-geheugeninrichting. |
US4037242A (en) * | 1975-12-29 | 1977-07-19 | Texas Instruments Incorporated | Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device |
DE3007892C2 (de) * | 1980-03-01 | 1982-06-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-Gate-Speicherzelle |
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
DE3029539A1 (de) * | 1980-08-04 | 1982-03-11 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle |
JPS6034198B2 (ja) * | 1980-11-26 | 1985-08-07 | 富士通株式会社 | 不揮発性メモリ |
EP0054355B1 (en) * | 1980-12-08 | 1986-04-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US4531203A (en) * | 1980-12-20 | 1985-07-23 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor memory device and method for manufacturing the same |
US4558339A (en) * | 1982-03-09 | 1985-12-10 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
US4417264A (en) * | 1982-03-09 | 1983-11-22 | Rca Corporation | Electrically alterable, nonvolatile floating gate memory device |
JPS5960797A (ja) * | 1982-09-30 | 1984-04-06 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59155968A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 半導体記憶装置 |
JPS6074577A (ja) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS60260147A (ja) * | 1984-06-06 | 1985-12-23 | Fujitsu Ltd | 半導体装置 |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
US4649520A (en) * | 1984-11-07 | 1987-03-10 | Waferscale Integration Inc. | Single layer polycrystalline floating gate |
JPH06101548B2 (ja) * | 1985-03-30 | 1994-12-12 | 株式会社東芝 | 半導体記憶装置 |
-
1986
- 1986-12-22 IT IT22800/86A patent/IT1199828B/it active
-
1987
- 1987-12-02 DE DE8787202392T patent/DE3780784T2/de not_active Expired - Fee Related
- 1987-12-02 EP EP87202392A patent/EP0272732B1/en not_active Expired
- 1987-12-17 JP JP62317644A patent/JPS63166274A/ja active Pending
- 1987-12-22 US US07/136,652 patent/US4935790A/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
IT8622800A0 (it) | 1986-12-22 |
JPS63166274A (ja) | 1988-07-09 |
EP0272732B1 (en) | 1992-07-29 |
DE3780784T2 (de) | 1993-03-18 |
EP0272732A3 (en) | 1989-03-15 |
DE3780784D1 (de) | 1992-09-03 |
EP0272732A2 (en) | 1988-06-29 |
US4935790A (en) | 1990-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |