IT1193544B - CMOS MONOLITHIC INTEGRATED CIRCUIT - Google Patents

CMOS MONOLITHIC INTEGRATED CIRCUIT

Info

Publication number
IT1193544B
IT1193544B IT23632/80A IT2363280A IT1193544B IT 1193544 B IT1193544 B IT 1193544B IT 23632/80 A IT23632/80 A IT 23632/80A IT 2363280 A IT2363280 A IT 2363280A IT 1193544 B IT1193544 B IT 1193544B
Authority
IT
Italy
Prior art keywords
integrated circuit
monolithic integrated
cmos monolithic
cmos
circuit
Prior art date
Application number
IT23632/80A
Other languages
Italian (it)
Other versions
IT8023632A0 (en
IT8023632A1 (en
Inventor
Fritz Guenter Adam
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IT8023632A0 publication Critical patent/IT8023632A0/en
Publication of IT8023632A1 publication Critical patent/IT8023632A1/en
Application granted granted Critical
Publication of IT1193544B publication Critical patent/IT1193544B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
IT23632/80A 1979-07-24 1980-07-23 CMOS MONOLITHIC INTEGRATED CIRCUIT IT1193544B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2929869A DE2929869C2 (en) 1979-07-24 1979-07-24 Monolithic integrated CMOS inverter circuitry

Publications (3)

Publication Number Publication Date
IT8023632A0 IT8023632A0 (en) 1980-07-23
IT8023632A1 IT8023632A1 (en) 1982-01-23
IT1193544B true IT1193544B (en) 1988-07-08

Family

ID=6076567

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23632/80A IT1193544B (en) 1979-07-24 1980-07-23 CMOS MONOLITHIC INTEGRATED CIRCUIT

Country Status (6)

Country Link
JP (1) JPS5618459A (en)
DE (1) DE2929869C2 (en)
FR (1) FR2462025A1 (en)
GB (1) GB2054955B (en)
IE (1) IE50350B1 (en)
IT (1) IT1193544B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
EP0166386A3 (en) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrated circuit of the complementary circuit technique
DE3685169D1 (en) * 1985-08-26 1992-06-11 Siemens Ag INTEGRATED CIRCUIT IN COMPLEMENTARY CIRCUIT TECHNOLOGY WITH A SUBSTRATE PRELOAD GENERATOR AND A SCHOTTKY DIODE.
US11955476B2 (en) 2008-12-23 2024-04-09 Schottky Lsi, Inc. Super CMOS devices on a microelectronics system
US11342916B2 (en) 2008-12-23 2022-05-24 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells
WO2016057973A1 (en) * 2014-10-10 2016-04-14 Schottky Lsi, Inc. Super cmos (scmostm) devices on a microelectronic system
US8476689B2 (en) 2008-12-23 2013-07-02 Augustine Wei-Chun Chang Super CMOS devices on a microelectronics system
US9853643B2 (en) 2008-12-23 2017-12-26 Schottky Lsi, Inc. Schottky-CMOS asynchronous logic cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS568501B2 (en) * 1973-05-12 1981-02-24
JPS5211885A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS5211880A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor integrated circuit device
JPS6043666B2 (en) * 1976-10-18 1985-09-30 株式会社日立製作所 Complementary MIS semiconductor device
JPS53105985A (en) * 1977-02-28 1978-09-14 Nec Corp Conmplementary-type insulating gate field effect transistor

Also Published As

Publication number Publication date
DE2929869C2 (en) 1986-04-30
DE2929869A1 (en) 1981-02-19
GB2054955B (en) 1983-05-11
IT8023632A0 (en) 1980-07-23
IE801530L (en) 1981-01-24
FR2462025B1 (en) 1983-11-18
FR2462025A1 (en) 1981-02-06
JPS5618459A (en) 1981-02-21
GB2054955A (en) 1981-02-18
IT8023632A1 (en) 1982-01-23
IE50350B1 (en) 1986-04-02

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