IT1149830B - Memoria mosfet ad accesso casuale ad alta densita' - Google Patents
Memoria mosfet ad accesso casuale ad alta densita'Info
- Publication number
- IT1149830B IT1149830B IT21316/80A IT2131680A IT1149830B IT 1149830 B IT1149830 B IT 1149830B IT 21316/80 A IT21316/80 A IT 21316/80A IT 2131680 A IT2131680 A IT 2131680A IT 1149830 B IT1149830 B IT 1149830B
- Authority
- IT
- Italy
- Prior art keywords
- high density
- mosfet memory
- access mosfet
- casual access
- casual
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/131—Reactive ion etching rie
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/036,722 US4252579A (en) | 1979-05-07 | 1979-05-07 | Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8021316A0 IT8021316A0 (it) | 1980-04-11 |
IT1149830B true IT1149830B (it) | 1986-12-10 |
Family
ID=21890246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT21316/80A IT1149830B (it) | 1979-05-07 | 1980-04-11 | Memoria mosfet ad accesso casuale ad alta densita' |
Country Status (6)
Country | Link |
---|---|
US (1) | US4252579A (it) |
EP (1) | EP0018501B1 (it) |
JP (1) | JPS5840343B2 (it) |
CA (1) | CA1133136A (it) |
DE (1) | DE3063421D1 (it) |
IT (1) | IT1149830B (it) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827667B2 (ja) * | 1979-02-19 | 1983-06-10 | 富士通株式会社 | 半導体装置 |
JPS5636143A (en) * | 1979-08-31 | 1981-04-09 | Hitachi Ltd | Manufacture of semiconductor device |
US4333227A (en) * | 1979-11-29 | 1982-06-08 | International Business Machines Corporation | Process for fabricating a self-aligned micrometer bipolar transistor device |
US4400715A (en) * | 1980-11-19 | 1983-08-23 | International Business Machines Corporation | Thin film semiconductor device and method for manufacture |
US4333794A (en) * | 1981-04-07 | 1982-06-08 | International Business Machines Corporation | Omission of thick Si3 N4 layers in ISA schemes |
GB2104722B (en) * | 1981-06-25 | 1985-04-24 | Suwa Seikosha Kk | Mos semiconductor device and method of manufacturing the same |
JPS583248A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | バイポ−ラ型半導体装置の製造方法 |
US4375124A (en) * | 1981-11-12 | 1983-03-01 | Gte Laboratories Incorporated | Power static induction transistor fabrication |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
JPS5982761A (ja) * | 1982-11-04 | 1984-05-12 | Hitachi Ltd | 半導体メモリ |
US4830975A (en) * | 1983-01-13 | 1989-05-16 | National Semiconductor Corporation | Method of manufacture a primos device |
JPH0666436B2 (ja) * | 1983-04-15 | 1994-08-24 | 株式会社日立製作所 | 半導体集積回路装置 |
JPS6070766A (ja) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS60128654A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体集積回路 |
JPH0793365B2 (ja) * | 1984-09-11 | 1995-10-09 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US4916511A (en) * | 1985-05-03 | 1990-04-10 | Texas Instruments Incorporated | Trench structure and process |
US4788158A (en) * | 1985-09-25 | 1988-11-29 | Texas Instruments Incorporated | Method of making vertical inverter |
US4937648A (en) * | 1986-03-12 | 1990-06-26 | Huang Jack S T | Resistant transistor |
NL8600786A (nl) * | 1986-03-27 | 1987-10-16 | Philips Nv | Ladingsgekoppelde inrichting. |
US4829017A (en) * | 1986-09-25 | 1989-05-09 | Texas Instruments Incorporated | Method for lubricating a high capacity dram cell |
JPS6370851U (it) * | 1986-10-28 | 1988-05-12 | ||
US5082795A (en) * | 1986-12-05 | 1992-01-21 | General Electric Company | Method of fabricating a field effect semiconductor device having a self-aligned structure |
US4794561A (en) * | 1987-07-02 | 1988-12-27 | Integrated Device Technology, Inc. | Static ram cell with trench pull-down transistors and buried-layer ground plate |
US5545290A (en) * | 1987-07-09 | 1996-08-13 | Texas Instruments Incorporated | Etching method |
US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
US5015594A (en) * | 1988-10-24 | 1991-05-14 | International Business Machines Corporation | Process of making BiCMOS devices having closely spaced device regions |
US4894697A (en) * | 1988-10-31 | 1990-01-16 | International Business Machines Corporation | Ultra dense dram cell and its method of fabrication |
US5028980A (en) * | 1988-12-21 | 1991-07-02 | Texas Instruments Incorporated | Trench capacitor with expanded area |
US5064777A (en) * | 1990-06-28 | 1991-11-12 | International Business Machines Corporation | Fabrication method for a double trench memory cell device |
US5192708A (en) * | 1991-04-29 | 1993-03-09 | International Business Machines Corporation | Sub-layer contact technique using in situ doped amorphous silicon and solid phase recrystallization |
US5395784A (en) * | 1993-04-14 | 1995-03-07 | Industrial Technology Research Institute | Method of manufacturing low leakage and long retention time DRAM |
KR0123751B1 (ko) * | 1993-10-07 | 1997-11-25 | 김광호 | 반도체장치 및 그 제조방법 |
US5909618A (en) | 1997-07-08 | 1999-06-01 | Micron Technology, Inc. | Method of making memory cell with vertical transistor and buried word and body lines |
US6150687A (en) | 1997-07-08 | 2000-11-21 | Micron Technology, Inc. | Memory cell having a vertical transistor with buried source/drain and dual gates |
US5973356A (en) * | 1997-07-08 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory |
US6072209A (en) | 1997-07-08 | 2000-06-06 | Micro Technology, Inc. | Four F2 folded bit line DRAM cell structure having buried bit and word lines |
US5907170A (en) | 1997-10-06 | 1999-05-25 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
US6528837B2 (en) | 1997-10-06 | 2003-03-04 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
US6025225A (en) * | 1998-01-22 | 2000-02-15 | Micron Technology, Inc. | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
US6246083B1 (en) | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US5991225A (en) * | 1998-02-27 | 1999-11-23 | Micron Technology, Inc. | Programmable memory address decode array with vertical transistors |
US6124729A (en) | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US6043527A (en) | 1998-04-14 | 2000-03-28 | Micron Technology, Inc. | Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device |
US6134175A (en) | 1998-08-04 | 2000-10-17 | Micron Technology, Inc. | Memory address decode array with vertical transistors |
US6208164B1 (en) | 1998-08-04 | 2001-03-27 | Micron Technology, Inc. | Programmable logic array with vertical transistors |
US7229872B2 (en) * | 2000-04-04 | 2007-06-12 | International Rectifier Corporation | Low voltage power MOSFET device and process for its manufacture |
SG112804A1 (en) * | 2001-05-10 | 2005-07-28 | Inst Of Microelectronics | Sloped trench etching process |
JP2007189008A (ja) * | 2006-01-12 | 2007-07-26 | Elpida Memory Inc | 半導体記憶装置およびその製造方法 |
US10361200B1 (en) | 2018-03-07 | 2019-07-23 | International Business Machines Corporation | Vertical fin field effect transistor with integral U-shaped electrical gate connection |
US20230292497A1 (en) * | 2022-03-11 | 2023-09-14 | Nanya Technology Corporation | Manufacturing method of semiconductor structure |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3412297A (en) * | 1965-12-16 | 1968-11-19 | United Aircraft Corp | Mos field-effect transistor with a onemicron vertical channel |
US4017883A (en) * | 1971-07-06 | 1977-04-12 | Ibm Corporation | Single-electrode charge-coupled random access memory cell with impurity implanted gate region |
US3938241A (en) * | 1972-10-24 | 1976-02-17 | Motorola, Inc. | Vertical channel junction field-effect transistors and method of manufacture |
NL157137B (nl) * | 1973-03-27 | 1978-06-15 | Nkf Kabel Bv | Werkwijze en inrichting voor het gelijkmatig met poedervormig materiaal bedekken van een langwerpig voorwerp, waarvan althans de buitenlaag bestaat uit door warmte smeltbare kunststof. |
US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
US4003126A (en) * | 1974-09-12 | 1977-01-18 | Canadian Patents And Development Limited | Method of making metal oxide semiconductor devices |
US4037306A (en) * | 1975-10-02 | 1977-07-26 | Motorola, Inc. | Integrated circuit and method |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4222062A (en) * | 1976-05-04 | 1980-09-09 | American Microsystems, Inc. | VMOS Floating gate memory device |
US4070690A (en) * | 1976-08-17 | 1978-01-24 | Westinghouse Electric Corporation | VMOS transistor |
DE2642615C2 (de) * | 1976-09-22 | 1986-04-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterspeicher |
US4084175A (en) * | 1976-09-30 | 1978-04-11 | Research Corporation | Double implanted planar mos device with v-groove and process of manufacture thereof |
US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
CA1118892A (en) * | 1977-12-27 | 1982-02-23 | John R. Edwards | Semiconductor device utilizing memory cells with sidewall charge storage regions |
US4116720A (en) * | 1977-12-27 | 1978-09-26 | Burroughs Corporation | Method of making a V-MOS field effect transistor for a dynamic memory cell having improved capacitance |
-
1979
- 1979-05-07 US US06/036,722 patent/US4252579A/en not_active Expired - Lifetime
-
1980
- 1980-02-20 JP JP55019308A patent/JPS5840343B2/ja not_active Expired
- 1980-03-21 CA CA348,131A patent/CA1133136A/en not_active Expired
- 1980-03-27 EP EP80101629A patent/EP0018501B1/de not_active Expired
- 1980-03-27 DE DE8080101629T patent/DE3063421D1/de not_active Expired
- 1980-04-11 IT IT21316/80A patent/IT1149830B/it active
Also Published As
Publication number | Publication date |
---|---|
CA1133136A (en) | 1982-10-05 |
JPS5840343B2 (ja) | 1983-09-05 |
JPS55148438A (en) | 1980-11-19 |
EP0018501A1 (de) | 1980-11-12 |
DE3063421D1 (en) | 1983-07-07 |
EP0018501B1 (de) | 1983-05-25 |
US4252579A (en) | 1981-02-24 |
IT8021316A0 (it) | 1980-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT1149830B (it) | Memoria mosfet ad accesso casuale ad alta densita' | |
FR2381354B1 (fr) | Capacite perfectionnee d'ecriture en anti-memoire | |
IT1150377B (it) | Dispositivo di memoria ad alta densita'non volatile elettricamente alternabile | |
BR8102741A (pt) | Conjunto de memoria de alta densidade | |
IT1160500B (it) | Memoria ad accesso casuale mosdinamica | |
IT1193899B (it) | Pultiore automatico di cilindro caucciu' | |
IT7920569A0 (it) | Memoria temporanea ad alta velocita' perfezionata. | |
IT7926398A0 (it) | Sbarra collettrice di alta capacita'. | |
DE69027907D1 (de) | Datenspeicherzugriff | |
IT1121993B (it) | Procedimento migliorato per l'essiccamento di materiali incoerenti | |
IT8019348A0 (it) | Dispositivo per l'accumulazione dicalore. | |
IT1165399B (it) | Memoria perfezionata | |
DK163246C (da) | 4'-keto-n-trifluoracetyldaunorubicin | |
BE862712A (fr) | Etageres d'entreposage | |
IT1226636B (it) | Detergente in polvere ad alta densita'. | |
IT8050124A0 (it) | Perfezionamento nelle spolette di prossimita' | |
DE3585811D1 (de) | Direktzugriffsspeicher. | |
DE3586064D1 (de) | Dynamischer lese-schreib-direktzugriffsspeicher. | |
IT8024455A0 (it) | Unita' di caricamento e cambiamento fili. | |
BE881400A (fr) | Perfectionnements a l'autoradiographie. | |
IT8022606A0 (it) | Struttura per l'indirizzamento implicito e l'accesso a dispositivi di memorizzazione. | |
BE881111A (fr) | Caseinates d'oligo-element | |
IT1149263B (it) | Memoria ad accesso multiplo | |
IT8125414A0 (it) | Procedimento per l'incisione e la lettura di nastri di memoria. | |
FI802904A (fi) | 15-sulfonamidprostaglandinderivat |