IT1114884B - Procedimento di fabbricazione di dispositivi semiconduttori - Google Patents
Procedimento di fabbricazione di dispositivi semiconduttoriInfo
- Publication number
- IT1114884B IT1114884B IT24957/77A IT2495777A IT1114884B IT 1114884 B IT1114884 B IT 1114884B IT 24957/77 A IT24957/77 A IT 24957/77A IT 2495777 A IT2495777 A IT 2495777A IT 1114884 B IT1114884 B IT 1114884B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor devices
- manufacture procedure
- devices manufacture
- procedure
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26526—Recoil-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/701,789 US4069068A (en) | 1976-07-02 | 1976-07-02 | Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1114884B true IT1114884B (it) | 1986-01-27 |
Family
ID=24818687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT24957/77A IT1114884B (it) | 1976-07-02 | 1977-06-23 | Procedimento di fabbricazione di dispositivi semiconduttori |
Country Status (7)
Country | Link |
---|---|
US (1) | US4069068A (it) |
JP (1) | JPS535965A (it) |
CA (1) | CA1090005A (it) |
DE (1) | DE2728985A1 (it) |
FR (1) | FR2357065A1 (it) |
GB (1) | GB1521879A (it) |
IT (1) | IT1114884B (it) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4133701A (en) * | 1977-06-29 | 1979-01-09 | General Motors Corporation | Selective enhancement of phosphorus diffusion by implanting halogen ions |
US4131487A (en) * | 1977-10-26 | 1978-12-26 | Western Electric Company, Inc. | Gettering semiconductor wafers with a high energy laser beam |
US4144099A (en) * | 1977-10-31 | 1979-03-13 | International Business Machines Corporation | High performance silicon wafer and fabrication process |
US4144100A (en) * | 1977-12-02 | 1979-03-13 | General Motors Corporation | Method of low dose phoshorus implantation for oxide passivated diodes in <10> P-type silicon |
US4170492A (en) * | 1978-04-18 | 1979-10-09 | Texas Instruments Incorporated | Method of selective oxidation in manufacture of semiconductor devices |
US4320312A (en) * | 1978-10-02 | 1982-03-16 | Hewlett-Packard Company | Smaller memory cells and logic circuits |
US4231809A (en) * | 1979-05-25 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Method of removing impurity metals from semiconductor devices |
JPS5617011A (en) * | 1979-07-23 | 1981-02-18 | Toshiba Corp | Semiconductor device and manufacture thereof |
US4249962A (en) * | 1979-09-11 | 1981-02-10 | Western Electric Company, Inc. | Method of removing contaminating impurities from device areas in a semiconductor wafer |
US4257827A (en) * | 1979-11-13 | 1981-03-24 | International Business Machines Corporation | High efficiency gettering in silicon through localized superheated melt formation |
JPS5693367A (en) * | 1979-12-20 | 1981-07-28 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58132922A (ja) * | 1982-02-01 | 1983-08-08 | Toshiba Corp | 半導体装置の製造方法 |
US4569120A (en) * | 1983-03-07 | 1986-02-11 | Signetics Corporation | Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation |
WO1985000694A1 (en) * | 1983-07-25 | 1985-02-14 | American Telephone & Telegraph Company | Shallow-junction semiconductor devices |
JPS6031231A (ja) * | 1983-07-29 | 1985-02-18 | Toshiba Corp | 半導体基体の製造方法 |
JPS6084813A (ja) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | 半導体装置の製造方法 |
JPS6295869A (ja) * | 1985-10-22 | 1987-05-02 | Nec Corp | 半導体装置 |
US4837172A (en) * | 1986-07-18 | 1989-06-06 | Matsushita Electric Industrial Co., Ltd. | Method for removing impurities existing in semiconductor substrate |
US4796073A (en) * | 1986-11-14 | 1989-01-03 | Burr-Brown Corporation | Front-surface N+ gettering techniques for reducing noise in integrated circuits |
US4849365A (en) * | 1988-02-16 | 1989-07-18 | Honeywell Inc. | Selective integrated circuit interconnection |
US5034337A (en) * | 1989-02-10 | 1991-07-23 | Texas Instruments Incorporated | Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices |
US5358879A (en) * | 1993-04-30 | 1994-10-25 | Loral Federal Systems Company | Method of making gate overlapped lightly doped drain for buried channel devices |
US5840590A (en) * | 1993-12-01 | 1998-11-24 | Sandia Corporation | Impurity gettering in silicon using cavities formed by helium implantation and annealing |
JP4216803B2 (ja) * | 2002-05-29 | 2009-01-28 | 本田技研工業株式会社 | 金属膜の酸化によってナノポーラス基板上に形成されたサブミクロン電解質薄膜 |
JP2004304099A (ja) * | 2003-04-01 | 2004-10-28 | Toshiba Corp | 半導体装置 |
US20060220112A1 (en) * | 2005-04-01 | 2006-10-05 | International Business Machines Corporation | Semiconductor device forming method and structure for retarding dopant-enhanced diffusion |
US20080204068A1 (en) * | 2007-02-28 | 2008-08-28 | International Business Machines Corporation | Method for estimating defects in an npn transistor array |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3457632A (en) * | 1966-10-07 | 1969-07-29 | Us Air Force | Process for implanting buried layers in semiconductor devices |
US3540925A (en) * | 1967-08-02 | 1970-11-17 | Rca Corp | Ion bombardment of insulated gate semiconductor devices |
US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
US3663308A (en) * | 1970-11-05 | 1972-05-16 | Us Navy | Method of making ion implanted dielectric enclosures |
US3796929A (en) * | 1970-12-09 | 1974-03-12 | Philips Nv | Junction isolated integrated circuit resistor with crystal damage near isolation junction |
JPS5226433B2 (it) * | 1971-09-18 | 1977-07-14 | ||
US3756861A (en) * | 1972-03-13 | 1973-09-04 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
FR2191272A1 (it) * | 1972-06-27 | 1974-02-01 | Ibm France | |
JPS5630704B2 (it) * | 1973-05-24 | 1981-07-16 | ||
US3948694A (en) * | 1975-04-30 | 1976-04-06 | Motorola, Inc. | Self-aligned method for integrated circuit manufacture |
US4025364A (en) * | 1975-08-11 | 1977-05-24 | Fairchild Camera And Instrument Corporation | Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases |
-
1976
- 1976-07-02 US US05/701,789 patent/US4069068A/en not_active Expired - Lifetime
-
1977
- 1977-06-02 FR FR7717613A patent/FR2357065A1/fr active Granted
- 1977-06-13 GB GB24596/77A patent/GB1521879A/en not_active Expired
- 1977-06-23 IT IT24957/77A patent/IT1114884B/it active
- 1977-06-27 JP JP7565277A patent/JPS535965A/ja active Pending
- 1977-06-28 CA CA281,576A patent/CA1090005A/en not_active Expired
- 1977-06-28 DE DE19772728985 patent/DE2728985A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US4069068A (en) | 1978-01-17 |
FR2357065B1 (it) | 1979-03-23 |
GB1521879A (en) | 1978-08-16 |
JPS535965A (en) | 1978-01-19 |
FR2357065A1 (fr) | 1978-01-27 |
CA1090005A (en) | 1980-11-18 |
DE2728985A1 (de) | 1978-01-05 |
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