SE7800782L - Halvledarelement - Google Patents
HalvledarelementInfo
- Publication number
- SE7800782L SE7800782L SE7800782A SE7800782A SE7800782L SE 7800782 L SE7800782 L SE 7800782L SE 7800782 A SE7800782 A SE 7800782A SE 7800782 A SE7800782 A SE 7800782A SE 7800782 L SE7800782 L SE 7800782L
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor element
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52005787A JPS5942989B2 (ja) | 1977-01-24 | 1977-01-24 | 高耐圧半導体素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7800782L true SE7800782L (sv) | 1978-07-25 |
SE437309B SE437309B (sv) | 1985-02-18 |
Family
ID=11620802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7800782A SE437309B (sv) | 1977-01-24 | 1978-01-23 | Forfarande for framstellning av ett halvledarelement i stand att utherda hoga spenningar |
Country Status (5)
Country | Link |
---|---|
US (1) | US4402001A (sv) |
JP (1) | JPS5942989B2 (sv) |
CA (1) | CA1111571A (sv) |
DE (1) | DE2802727C2 (sv) |
SE (1) | SE437309B (sv) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5624972A (en) * | 1979-08-07 | 1981-03-10 | Mitsubishi Electric Corp | Thyristor |
FR2535901A1 (fr) * | 1982-11-10 | 1984-05-11 | Silicium Semiconducteur Ssc | Thyristor asymetrique a forte tenue en tension inverse |
GB2135118B (en) * | 1983-02-09 | 1986-10-08 | Westinghouse Brake & Signal | Thyristors |
EP0156022B1 (de) * | 1984-03-30 | 1989-05-31 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares Halbleiterbauelement |
EP0283788A1 (de) * | 1987-03-09 | 1988-09-28 | Siemens Aktiengesellschaft | Abschaltbares Leistungshalbleiterbauelement |
JPS63269574A (ja) * | 1987-04-27 | 1988-11-07 | Mitsubishi Electric Corp | 半導体素子 |
EP0303046B1 (de) * | 1987-08-11 | 1992-01-02 | BBC Brown Boveri AG | Gate-Turn-Off-Thyristor |
JP4129106B2 (ja) * | 1999-10-27 | 2008-08-06 | 三菱電機株式会社 | 半導体装置 |
FR2815471B1 (fr) * | 2000-10-12 | 2003-02-07 | St Microelectronics Sa | Composant vertical a tenue en tension elevee |
JP2002305304A (ja) * | 2001-04-05 | 2002-10-18 | Toshiba Corp | 電力用半導体装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL249774A (sv) * | 1959-03-26 | |||
NL275313A (sv) * | 1961-05-10 | |||
US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3362858A (en) * | 1963-01-04 | 1968-01-09 | Westinghouse Electric Corp | Fabrication of semiconductor controlled rectifiers |
US3363151A (en) * | 1964-07-09 | 1968-01-09 | Transitron Electronic Corp | Means for forming planar junctions and devices |
US3338758A (en) * | 1964-12-31 | 1967-08-29 | Fairchild Camera Instr Co | Surface gradient protected high breakdown junctions |
DE1489694B2 (de) * | 1965-07-10 | 1971-09-02 | Brown, Boven & Cie AG, 6800 Mann heim | Verfahren zum herstellen eines halbleiterbauelementes mit gestoerten kristallschichten an der oberflaeche |
US3427515A (en) * | 1966-06-27 | 1969-02-11 | Rca Corp | High voltage semiconductor transistor |
DE1614410B2 (de) * | 1967-01-25 | 1973-12-13 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Halbleiterbauelement |
GB1209310A (en) * | 1967-04-11 | 1970-10-21 | Lucas Industries Ltd | High voltage n-p-n transistors |
US3486950A (en) * | 1967-04-26 | 1969-12-30 | Motorola Inc | Localized control of carrier lifetimes in p-n junction devices and integrated circuits |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
US3777227A (en) * | 1972-08-21 | 1973-12-04 | Westinghouse Electric Corp | Double diffused high voltage, high current npn transistor |
CH580339A5 (sv) * | 1974-12-23 | 1976-09-30 | Bbc Brown Boveri & Cie |
-
1977
- 1977-01-24 JP JP52005787A patent/JPS5942989B2/ja not_active Expired
-
1978
- 1978-01-12 US US05/868,791 patent/US4402001A/en not_active Expired - Lifetime
- 1978-01-18 CA CA295,233A patent/CA1111571A/en not_active Expired
- 1978-01-23 SE SE7800782A patent/SE437309B/sv unknown
- 1978-01-23 DE DE2802727A patent/DE2802727C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5942989B2 (ja) | 1984-10-18 |
DE2802727C2 (de) | 1982-05-27 |
CA1111571A (en) | 1981-10-27 |
SE437309B (sv) | 1985-02-18 |
DE2802727A1 (de) | 1978-08-03 |
US4402001A (en) | 1983-08-30 |
JPS5391586A (en) | 1978-08-11 |
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