IL230974A0 - A method for determining focus corrections, a lithographic processing cell and a method for manufacturing a device - Google Patents
A method for determining focus corrections, a lithographic processing cell and a method for manufacturing a deviceInfo
- Publication number
- IL230974A0 IL230974A0 IL230974A IL23097414A IL230974A0 IL 230974 A0 IL230974 A0 IL 230974A0 IL 230974 A IL230974 A IL 230974A IL 23097414 A IL23097414 A IL 23097414A IL 230974 A0 IL230974 A0 IL 230974A0
- Authority
- IL
- Israel
- Prior art keywords
- device manufacturing
- processing cell
- lithographic processing
- determining focus
- focus corrections
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161529586P | 2011-08-31 | 2011-08-31 | |
PCT/EP2012/065599 WO2013029957A2 (en) | 2011-08-31 | 2012-08-09 | A method of determining focus corrections, lithographic processing cell and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
IL230974A0 true IL230974A0 (en) | 2014-03-31 |
Family
ID=46754953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL230974A IL230974A0 (en) | 2011-08-31 | 2014-02-13 | A method for determining focus corrections, a lithographic processing cell and a method for manufacturing a device |
Country Status (8)
Country | Link |
---|---|
US (2) | US9360769B2 (ja) |
JP (1) | JP5864752B2 (ja) |
KR (1) | KR20140068970A (ja) |
CN (2) | CN103782238B (ja) |
IL (1) | IL230974A0 (ja) |
NL (1) | NL2009305A (ja) |
TW (1) | TWI470374B (ja) |
WO (1) | WO2013029957A2 (ja) |
Families Citing this family (35)
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KR20140068970A (ko) | 2011-08-31 | 2014-06-09 | 에이에스엠엘 네델란즈 비.브이. | 포커스 보정을 결정하는 방법, 리소그래피 처리 셀 및 디바이스 제조 방법 |
US9383661B2 (en) * | 2013-08-10 | 2016-07-05 | Kla-Tencor Corporation | Methods and apparatus for determining focus |
US10935893B2 (en) | 2013-08-11 | 2021-03-02 | Kla-Tencor Corporation | Differential methods and apparatus for metrology of semiconductor targets |
US10473525B2 (en) | 2013-11-01 | 2019-11-12 | Tokyo Electron Limited | Spatially resolved optical emission spectroscopy (OES) in plasma processing |
KR101832640B1 (ko) | 2013-11-01 | 2018-02-26 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리의 공간 분해 방사 분광 |
WO2015090839A1 (en) * | 2013-12-17 | 2015-06-25 | Asml Netherlands B.V. | Inspection method, lithographic apparatus, mask and substrate |
CN104767926A (zh) * | 2014-01-07 | 2015-07-08 | 北京三星通信技术研究有限公司 | 自动对焦的方法及装置 |
JP2017509016A (ja) | 2014-03-04 | 2017-03-30 | エーエスエムエル ネザーランズ ビー.ブイ. | データ処理装置を用いたリソグラフィ装置 |
CN105185703B (zh) * | 2014-06-18 | 2019-09-17 | 上海华力微电子有限公司 | 一种晶圆边缘找平的方法 |
JP6223944B2 (ja) * | 2014-08-07 | 2017-11-01 | 東芝メモリ株式会社 | フォーカス補正装置、フォーカス補正方法およびプログラム |
EP3086175B1 (en) | 2015-04-22 | 2022-01-26 | IMEC vzw | Method for hotspot detection and ranking of a lithographic mask |
NL2016864A (en) * | 2015-06-12 | 2016-12-12 | Asml Netherlands Bv | Inspection apparatus, inspection method, lithographic apparatus, patterning device and manufacturing method |
NL2017060A (en) * | 2015-07-13 | 2017-01-17 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN107850861B (zh) * | 2015-07-16 | 2020-08-07 | Asml荷兰有限公司 | 光刻设备和器件制造方法 |
US10216096B2 (en) | 2015-08-14 | 2019-02-26 | Kla-Tencor Corporation | Process-sensitive metrology systems and methods |
WO2017080735A1 (en) * | 2015-11-13 | 2017-05-18 | Asml Netherlands B.V. | Method of predicting performance of a lithographic apparatus, calibration of lithographic apparatus, device manufacturing method |
CN107290937B (zh) | 2016-03-31 | 2018-10-16 | 上海微电子装备(集团)股份有限公司 | 一种投影曝光装置及方法 |
WO2017171880A1 (en) * | 2016-04-01 | 2017-10-05 | Intel Corporation | Systems, methods, and apparatuses for implementing critical dimension (cd) and phase calibration of alternating phase shift masks (apsm) and chromeless phase lithography (cpl) masks for modeling |
US10649342B2 (en) | 2016-07-11 | 2020-05-12 | Asml Netherlands B.V. | Method and apparatus for determining a fingerprint of a performance parameter |
EP3279735A1 (en) | 2016-08-01 | 2018-02-07 | ASML Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
JPWO2018030063A1 (ja) * | 2016-08-09 | 2019-06-06 | 株式会社エンプラス | マーカ |
EP3343294A1 (en) * | 2016-12-30 | 2018-07-04 | ASML Netherlands B.V. | Lithographic process & apparatus and inspection process and apparatus |
US10215704B2 (en) | 2017-03-02 | 2019-02-26 | Tokyo Electron Limited | Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing |
EP3447580A1 (en) * | 2017-08-21 | 2019-02-27 | ASML Netherlands B.V. | Method of calibrating focus measurements, measurement method and metrology apparatus, lithographic system and device manufacturing method |
CN107632499B (zh) * | 2017-09-28 | 2019-08-06 | 武汉华星光电技术有限公司 | 聚焦监控组件 |
US10522794B2 (en) * | 2017-11-01 | 2019-12-31 | Emagin Corporation | Method of active alignment for direct patterning high resolution micro-display |
EP3495888A1 (en) * | 2017-12-06 | 2019-06-12 | ASML Netherlands B.V. | Method for controlling a lithographic apparatus and associated apparatuses |
JP6688330B2 (ja) * | 2018-02-28 | 2020-04-28 | キヤノン株式会社 | 露光方法、露光装置、決定方法および物品製造方法 |
EP3570110A1 (en) * | 2018-05-16 | 2019-11-20 | ASML Netherlands B.V. | Estimating a parameter of a substrate |
CN108803264B (zh) * | 2018-06-08 | 2020-06-16 | 上海华虹宏力半导体制造有限公司 | 晶圆上多个对准标记的集中放置和光刻位置的确定方法 |
CN110657743B (zh) * | 2018-06-28 | 2021-08-31 | 上海微电子装备(集团)股份有限公司 | 一种栅格误差的测量方法、测量装置以及光学设备 |
CN108965735B (zh) * | 2018-09-27 | 2023-11-03 | 武汉华星光电技术有限公司 | 对焦补偿的方法及其设备 |
CN110007566A (zh) * | 2019-03-04 | 2019-07-12 | 上海华力集成电路制造有限公司 | 侦测晶圆中心与边缘之间聚焦变化量的方法及其补偿方法 |
CN111146104B (zh) * | 2019-11-29 | 2023-09-05 | 上海集成电路研发中心有限公司 | 一种关键尺寸误差分析方法 |
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JP3211491B2 (ja) | 1993-06-07 | 2001-09-25 | キヤノン株式会社 | 投影露光装置及びそれを用いた半導体製造方法並びに装置 |
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JPH10254123A (ja) * | 1997-03-10 | 1998-09-25 | Nikon Corp | テストパターンが形成されたレチクル |
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JP2000133569A (ja) * | 1998-10-26 | 2000-05-12 | Mitsubishi Electric Corp | フォーカスの補正方法および半導体装置の製造方法 |
US7016025B1 (en) * | 1999-06-24 | 2006-03-21 | Asml Holding N.V. | Method and apparatus for characterization of optical systems |
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US7749666B2 (en) * | 2005-08-09 | 2010-07-06 | Asml Netherlands B.V. | System and method for measuring and analyzing lithographic parameters and determining optimal process corrections |
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JP2008119872A (ja) * | 2006-11-09 | 2008-05-29 | Seiko Epson Corp | 補正値決定方法、露光装置および画像形成装置 |
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WO2010076232A2 (en) * | 2008-12-30 | 2010-07-08 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
JP2010199159A (ja) | 2009-02-23 | 2010-09-09 | Toshiba Corp | 半導体装置製造方法および露光パラメータ作成プログラム |
KR101257453B1 (ko) | 2009-05-12 | 2013-04-23 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피에 사용하는 검사 방법 |
IL210832A (en) * | 2010-02-19 | 2016-11-30 | Asml Netherlands Bv | Lithographic facility and method of manufacturing facility |
CN102163008B (zh) * | 2011-05-17 | 2013-06-05 | 北京理工大学 | ***误差自校准的光刻机投影物镜波像差的在线检测方法 |
KR20140068970A (ko) | 2011-08-31 | 2014-06-09 | 에이에스엠엘 네델란즈 비.브이. | 포커스 보정을 결정하는 방법, 리소그래피 처리 셀 및 디바이스 제조 방법 |
-
2012
- 2012-08-09 KR KR1020147006831A patent/KR20140068970A/ko active IP Right Grant
- 2012-08-09 CN CN201280041769.7A patent/CN103782238B/zh not_active Expired - Fee Related
- 2012-08-09 JP JP2014527573A patent/JP5864752B2/ja not_active Expired - Fee Related
- 2012-08-09 CN CN201610397542.6A patent/CN105892238B/zh not_active Expired - Fee Related
- 2012-08-09 NL NL2009305A patent/NL2009305A/en not_active Application Discontinuation
- 2012-08-09 WO PCT/EP2012/065599 patent/WO2013029957A2/en active Application Filing
- 2012-08-10 US US13/571,963 patent/US9360769B2/en not_active Expired - Fee Related
- 2012-08-27 TW TW101131065A patent/TWI470374B/zh not_active IP Right Cessation
-
2014
- 2014-02-13 IL IL230974A patent/IL230974A0/en unknown
- 2014-12-05 US US14/562,133 patent/US9360770B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201316135A (zh) | 2013-04-16 |
US20130050668A1 (en) | 2013-02-28 |
JP2014529903A (ja) | 2014-11-13 |
NL2009305A (en) | 2013-03-04 |
CN103782238B (zh) | 2016-08-17 |
WO2013029957A2 (en) | 2013-03-07 |
CN103782238A (zh) | 2014-05-07 |
JP5864752B2 (ja) | 2016-02-17 |
KR20140068970A (ko) | 2014-06-09 |
CN105892238A (zh) | 2016-08-24 |
WO2013029957A3 (en) | 2013-04-25 |
TWI470374B (zh) | 2015-01-21 |
US9360769B2 (en) | 2016-06-07 |
US9360770B2 (en) | 2016-06-07 |
CN105892238B (zh) | 2018-04-13 |
US20150085267A1 (en) | 2015-03-26 |
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