HK48190A - Dynamic memory - Google Patents
Dynamic memoryInfo
- Publication number
- HK48190A HK48190A HK481/90A HK48190A HK48190A HK 48190 A HK48190 A HK 48190A HK 481/90 A HK481/90 A HK 481/90A HK 48190 A HK48190 A HK 48190A HK 48190 A HK48190 A HK 48190A
- Authority
- HK
- Hong Kong
- Prior art keywords
- dynamic memory
- dynamic
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58192366A JPS6085492A (ja) | 1983-10-17 | 1983-10-17 | ダイナミツクメモリ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK48190A true HK48190A (en) | 1990-06-29 |
Family
ID=16290082
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK408/90A HK40890A (en) | 1983-10-17 | 1990-05-24 | Dynamic memory |
HK481/90A HK48190A (en) | 1983-10-17 | 1990-06-21 | Dynamic memory |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK408/90A HK40890A (en) | 1983-10-17 | 1990-05-24 | Dynamic memory |
Country Status (9)
Country | Link |
---|---|
US (1) | US4651306A (xx) |
JP (1) | JPS6085492A (xx) |
KR (1) | KR930000759B1 (xx) |
DE (1) | DE3438069A1 (xx) |
FR (1) | FR2553558B1 (xx) |
GB (2) | GB2149250B (xx) |
HK (2) | HK40890A (xx) |
IT (1) | IT1176975B (xx) |
SG (1) | SG31290G (xx) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61110394A (ja) * | 1984-10-31 | 1986-05-28 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPS621189A (ja) * | 1985-03-18 | 1987-01-07 | Nec Corp | Mosメモリ回路 |
JPS61296598A (ja) * | 1985-06-21 | 1986-12-27 | Mitsubishi Electric Corp | Mosダイナミツクramのダミ−ワ−ド線駆動回路 |
JPS6221357A (ja) * | 1985-07-22 | 1987-01-29 | Toshiba Corp | メモリシステム |
JPS62197992A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Electric Corp | ダイナミツクram |
JPS62200596A (ja) * | 1986-02-26 | 1987-09-04 | Mitsubishi Electric Corp | 半導体メモリ |
JPS6421788A (en) * | 1987-07-16 | 1989-01-25 | Nec Corp | Semiconductor memory device |
JP2953708B2 (ja) * | 1989-07-31 | 1999-09-27 | 株式会社東芝 | ダイナミック型半導体記憶装置 |
JPH07235612A (ja) * | 1994-02-23 | 1995-09-05 | Mitsubishi Electric Corp | 半導体装置のメモリセル構造 |
DE19703611A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Anwendungsspezifisches integriertes Halbleiterprodukt mit Dummy-Elementen |
JP2001006373A (ja) * | 1999-06-23 | 2001-01-12 | Hitachi Ltd | 伝送回路とこれを用いた半導体集積回路及び半導体メモリ |
FR2810150B1 (fr) * | 2000-06-13 | 2002-10-04 | St Microelectronics Sa | Dispositif de memoire vive dynamique et procede de commande d'un acces en lecture d'une telle memoire |
US6566191B2 (en) * | 2000-12-05 | 2003-05-20 | International Business Machines Corporation | Forming electronic structures having dual dielectric thicknesses and the structure so formed |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2239737B1 (xx) * | 1973-08-02 | 1980-12-05 | Texas Instruments Inc | |
DE3002017C2 (de) * | 1980-01-21 | 1982-02-04 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter Halbleiterspeicher |
JPS601713B2 (ja) * | 1980-12-25 | 1985-01-17 | 株式会社東芝 | ダイナミックメモリ装置 |
EP0068894B1 (en) * | 1981-06-29 | 1989-12-13 | Fujitsu Limited | Dynamic random access memory device |
JPS58111183A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | ダイナミツクram集積回路装置 |
US4493056A (en) * | 1982-06-30 | 1985-01-08 | International Business Machines Corporation | RAM Utilizing offset contact regions for increased storage capacitance |
US4547868A (en) * | 1984-07-26 | 1985-10-15 | Texas Instruments Incorporated | Dummy-cell circuitry for dynamic read/write memory |
-
1983
- 1983-10-17 JP JP58192366A patent/JPS6085492A/ja active Pending
-
1984
- 1984-09-06 GB GB08422521A patent/GB2149250B/en not_active Expired
- 1984-09-19 FR FR8414337A patent/FR2553558B1/fr not_active Expired - Lifetime
- 1984-10-15 KR KR1019840006361A patent/KR930000759B1/ko active IP Right Grant
- 1984-10-16 IT IT23162/84A patent/IT1176975B/it active
- 1984-10-17 DE DE19843438069 patent/DE3438069A1/de not_active Ceased
-
1986
- 1986-04-24 US US06/858,562 patent/US4651306A/en not_active Expired - Fee Related
- 1986-07-02 GB GB08616198A patent/GB2175476B/en not_active Expired
-
1990
- 1990-04-27 SG SG312/90A patent/SG31290G/en unknown
- 1990-05-24 HK HK408/90A patent/HK40890A/xx unknown
- 1990-06-21 HK HK481/90A patent/HK48190A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
KR850003046A (ko) | 1985-05-28 |
GB2149250B (en) | 1987-07-15 |
KR930000759B1 (ko) | 1993-02-01 |
GB8422521D0 (en) | 1984-10-10 |
GB2175476A (en) | 1986-11-26 |
SG31290G (en) | 1990-08-03 |
JPS6085492A (ja) | 1985-05-14 |
FR2553558A1 (fr) | 1985-04-19 |
GB2149250A (en) | 1985-06-05 |
DE3438069A1 (de) | 1985-05-02 |
US4651306A (en) | 1987-03-17 |
FR2553558B1 (fr) | 1991-10-04 |
GB2175476B (en) | 1987-07-15 |
GB8616198D0 (en) | 1986-08-06 |
HK40890A (en) | 1990-06-01 |
IT8423162A0 (it) | 1984-10-16 |
IT1176975B (it) | 1987-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3472502D1 (en) | Plural-bit-per-cell read-only memory | |
EP0149043A3 (en) | Random access memory | |
GB8431762D0 (en) | Semiconductor memory | |
HK69593A (en) | Mos memory | |
EP0140752A3 (en) | Memory subsystem | |
DE3480444D1 (en) | Multi-port memory | |
GB2135086B (en) | Dynamic memory refreshing | |
DE3479616D1 (en) | Multi-port memory | |
DE3276456D1 (en) | Dynamic memory device | |
EP0142376A3 (en) | Dynamic random access memory | |
GB8406411D0 (en) | Dynamic memory | |
DE3480242D1 (en) | Semiconductor memory | |
GB8422510D0 (en) | Memory overlay | |
GB2142724B (en) | Shape memory effect devices | |
EP0092985A3 (en) | Dynamic memory device | |
GB2107544B (en) | Dynamic randum access memory | |
GB2149250B (en) | Dynamic memory | |
EP0122564A3 (en) | Read only memory | |
EP0133023A3 (en) | Read-only memory | |
DE3174796D1 (en) | Dynamic semiconductor memory | |
EP0130414A3 (en) | Directory memory | |
GB8324526D0 (en) | Dynamic type mosram | |
DE3380678D1 (en) | Semiconductor memory | |
EP0119002A3 (en) | Semiconducteur memory device | |
GB8332967D0 (en) | Memory |