HK1255723A1 - 掃描曝光裝置 - Google Patents

掃描曝光裝置

Info

Publication number
HK1255723A1
HK1255723A1 HK18114874.2A HK18114874A HK1255723A1 HK 1255723 A1 HK1255723 A1 HK 1255723A1 HK 18114874 A HK18114874 A HK 18114874A HK 1255723 A1 HK1255723 A1 HK 1255723A1
Authority
HK
Hong Kong
Prior art keywords
exposure apparatus
scanning exposure
scanning
exposure
Prior art date
Application number
HK18114874.2A
Other languages
English (en)
Inventor
加藤正紀
鈴木智也
鬼頭義昭
堀正和
林田洋祐
木內徹
Original Assignee
株式會社尼康
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式會社尼康 filed Critical 株式會社尼康
Publication of HK1255723A1 publication Critical patent/HK1255723A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
HK18114874.2A 2013-04-18 2016-03-18 掃描曝光裝置 HK1255723A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013087650 2013-04-18
JP2013154965 2013-07-25

Publications (1)

Publication Number Publication Date
HK1255723A1 true HK1255723A1 (zh) 2019-08-23

Family

ID=51731223

Family Applications (2)

Application Number Title Priority Date Filing Date
HK18114874.2A HK1255723A1 (zh) 2013-04-18 2016-03-18 掃描曝光裝置
HK16103193.1A HK1215307A1 (zh) 2013-04-18 2016-03-18 基板處理裝置、器件製造方法、掃描曝光方法、曝光裝置、器件製造系統以及器件製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK16103193.1A HK1215307A1 (zh) 2013-04-18 2016-03-18 基板處理裝置、器件製造方法、掃描曝光方法、曝光裝置、器件製造系統以及器件製造方法

Country Status (6)

Country Link
JP (4) JP6269658B2 (zh)
KR (5) KR102204689B1 (zh)
CN (4) CN107908083B (zh)
HK (2) HK1255723A1 (zh)
TW (4) TWI707211B (zh)
WO (1) WO2014171270A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111781806B (zh) * 2015-10-30 2023-06-16 株式会社尼康 基板处理装置
US10983389B2 (en) 2016-03-04 2021-04-20 Applied Materials, Inc. Wire grid polarizer manufacturing method
US10541165B2 (en) * 2016-11-10 2020-01-21 Applied Materials, Inc. Systems, apparatus, and methods for an improved load port backplane
CN106950801A (zh) * 2017-04-16 2017-07-14 合肥芯碁微电子装备有限公司 一种无掩膜激光直写光刻设备的快速边缘曝光方法
CN111566559B (zh) * 2018-01-10 2023-12-12 凸版印刷株式会社 光掩模
JP7232586B2 (ja) * 2018-07-31 2023-03-03 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP7358970B2 (ja) * 2018-12-26 2023-10-11 株式会社デンソーウェーブ 光学的情報読取装置
CN109760407A (zh) * 2019-03-09 2019-05-17 深圳市正鑫源实业有限公司 智能凸版印刷压印力的控制方法及其凸版印刷***
US10880528B1 (en) * 2019-10-31 2020-12-29 Christie Digital Systems Usa, Inc. Device, system and method for modulating light using a phase light modulator and a spatial light modulator
TWI724867B (zh) * 2020-04-16 2021-04-11 光群雷射科技股份有限公司 轉印式滾輪的製造方法及轉印式滾輪
CN111510141B (zh) * 2020-06-03 2023-09-15 江苏集萃微纳自动化***与装备技术研究所有限公司 微型原子钟物理封装及微型原子钟
CN111965954B (zh) * 2020-09-09 2022-12-30 中国科学院光电技术研究所 一种掩模与基底相对同轴旋转的曝光装置

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JP3101473B2 (ja) * 1993-11-05 2000-10-23 キヤノン株式会社 露光方法及び該露光方法を用いるデバイス製造方法
JP2000035677A (ja) * 1998-07-17 2000-02-02 Adtec Engineeng:Kk 露光装置
KR200214060Y1 (ko) * 1998-12-31 2001-09-25 배진원 벨트장력 조절장치
KR100927560B1 (ko) * 2002-01-29 2009-11-23 가부시키가이샤 니콘 이미지 형성 상태 조정 시스템, 노광 방법 및 노광 장치, 그리고 프로그램 및 정보 기록 매체
JP2007227438A (ja) * 2006-02-21 2007-09-06 Nikon Corp 露光装置及び方法並びに光露光用マスク
JP2009528561A (ja) * 2006-02-28 2009-08-06 マイクロニック レーザー システムズ アクチボラゲット 基材を処理し、解析する、プラットフォーム、装置、システム、及び方法
JP4984631B2 (ja) 2006-04-28 2012-07-25 株式会社ニコン 露光装置及び方法、露光用マスク、並びにデバイス製造方法
TWI457723B (zh) * 2006-09-08 2014-10-21 尼康股份有限公司 A mask, an exposure device, and an element manufacturing method
JP5181451B2 (ja) * 2006-09-20 2013-04-10 株式会社ニコン マスク、露光装置及び露光方法、並びにデバイス製造方法
JP2008216653A (ja) 2007-03-05 2008-09-18 Fujifilm Corp 露光装置のフォトマスク保持構造、及び保持方法
JP5282895B2 (ja) * 2009-03-06 2013-09-04 株式会社ニコン 露光装置、露光方法、およびデバイス製造方法
JP2011033907A (ja) * 2009-08-04 2011-02-17 Nikon Corp 照明装置、露光装置、照明方法、露光方法及びデバイス製造方法
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WO2013035696A1 (ja) 2011-09-05 2013-03-14 株式会社ニコン 基板搬送装置及び基板処理装置
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JP2013213983A (ja) * 2012-04-03 2013-10-17 Nikon Corp 露光装置及びデバイス製造方法
WO2013157356A1 (ja) * 2012-04-19 2013-10-24 株式会社ニコン マスクユニット及び基板処理装置

Also Published As

Publication number Publication date
JP6773168B2 (ja) 2020-10-21
CN106933066A (zh) 2017-07-07
JP6269658B2 (ja) 2018-01-31
TWI640841B (zh) 2018-11-11
KR102005701B1 (ko) 2019-07-30
TWI707211B (zh) 2020-10-11
KR101956973B1 (ko) 2019-06-24
CN105339846B (zh) 2018-06-12
WO2014171270A1 (ja) 2014-10-23
TW201945865A (zh) 2019-12-01
HK1215307A1 (zh) 2016-08-19
TWI672568B (zh) 2019-09-21
JP2019135554A (ja) 2019-08-15
KR20150143741A (ko) 2015-12-23
CN108710263B (zh) 2021-01-26
CN105339846A (zh) 2016-02-17
JP2018081321A (ja) 2018-05-24
JP6515993B2 (ja) 2019-05-22
KR102126981B1 (ko) 2020-06-25
JP2017102489A (ja) 2017-06-08
JPWO2014171270A1 (ja) 2017-02-23
TW201901309A (zh) 2019-01-01
CN108710263A (zh) 2018-10-26
KR102204689B1 (ko) 2021-01-19
KR20200078679A (ko) 2020-07-01
TW201447501A (zh) 2014-12-16
CN106933066B (zh) 2018-10-23
KR102062509B1 (ko) 2020-01-03
KR20190021483A (ko) 2019-03-05
TWI610142B (zh) 2018-01-01
KR20190089237A (ko) 2019-07-30
CN107908083A (zh) 2018-04-13
TW201804264A (zh) 2018-02-01
JP6380583B2 (ja) 2018-08-29
CN107908083B (zh) 2020-09-18
KR20190133074A (ko) 2019-11-29

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