HK1094050A1 - Semiconductor device having flash memory - Google Patents

Semiconductor device having flash memory

Info

Publication number
HK1094050A1
HK1094050A1 HK06114107.5A HK06114107A HK1094050A1 HK 1094050 A1 HK1094050 A1 HK 1094050A1 HK 06114107 A HK06114107 A HK 06114107A HK 1094050 A1 HK1094050 A1 HK 1094050A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
flash memory
flash
memory
semiconductor
Prior art date
Application number
HK06114107.5A
Other languages
English (en)
Inventor
Masataka Nakano
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of HK1094050A1 publication Critical patent/HK1094050A1/xx

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
HK06114107.5A 2005-03-18 2006-12-22 Semiconductor device having flash memory HK1094050A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005080453A JP4748708B2 (ja) 2005-03-18 2005-03-18 半導体装置

Publications (1)

Publication Number Publication Date
HK1094050A1 true HK1094050A1 (en) 2007-03-16

Family

ID=37002693

Family Applications (1)

Application Number Title Priority Date Filing Date
HK06114107.5A HK1094050A1 (en) 2005-03-18 2006-12-22 Semiconductor device having flash memory

Country Status (4)

Country Link
US (1) US7610436B2 (ja)
JP (1) JP4748708B2 (ja)
CN (1) CN100517270C (ja)
HK (1) HK1094050A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010026794A (ja) * 2008-07-18 2010-02-04 Sony Computer Entertainment Inc メモリ制御装置及び方法、コンピュータプログラム
WO2009104330A1 (ja) 2008-02-20 2009-08-27 株式会社ソニー・コンピュータエンタテインメント メモリ制御方法及び装置、メモリアクセス制御方法、コンピュータプログラム、記録媒体
JP2010020586A (ja) * 2008-07-11 2010-01-28 Nec Electronics Corp データ処理装置
JP2011002945A (ja) * 2009-06-17 2011-01-06 Renesas Electronics Corp 半導体装置
WO2011007511A1 (ja) 2009-07-16 2011-01-20 パナソニック株式会社 メモリコントローラ、不揮発性記憶装置、アクセス装置、不揮発性記憶システム
JP2011154547A (ja) * 2010-01-27 2011-08-11 Toshiba Corp メモリ管理装置及びメモリ管理方法
US8321626B2 (en) * 2010-03-31 2012-11-27 Gainspan Corporation Management of configuration data using persistent memories requiring block-wise erase before rewriting
JP5366159B2 (ja) * 2011-09-06 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置及びマイクロコンピュータ
JP2015082166A (ja) * 2013-10-22 2015-04-27 ルネサスエレクトロニクス株式会社 データ格納用フラッシュメモリの管理方法およびそのプログラム
CN109086004A (zh) * 2018-07-19 2018-12-25 江苏华存电子科技有限公司 一种闪存中块类型的识别方法
CN113227984B (zh) * 2018-12-22 2023-12-15 华为技术有限公司 一种处理芯片、方法及相关设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09231113A (ja) * 1995-12-22 1997-09-05 Dainippon Printing Co Ltd Ｉｃカード
JP3954698B2 (ja) * 1997-08-29 2007-08-08 パナソニック コミュニケーションズ株式会社 メモリー制御装置
US6226728B1 (en) * 1998-04-21 2001-05-01 Intel Corporation Dynamic allocation for efficient management of variable sized data within a nonvolatile memory
JP2002244935A (ja) * 2001-02-20 2002-08-30 Mitsubishi Electric Corp 記憶管理装置および記憶管理方法
JP2002334024A (ja) 2001-05-11 2002-11-22 Denso Corp 電子制御装置
JP2004164493A (ja) * 2002-11-15 2004-06-10 Wescom Inc 不揮発性メモリのデータ管理システム、不揮発性メモリのデータ管理方法、およびそのプログラム
JP4419415B2 (ja) * 2003-03-28 2010-02-24 三菱電機株式会社 記録方式
JP4213532B2 (ja) * 2003-07-15 2009-01-21 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
CN100517270C (zh) 2009-07-22
US20060212646A1 (en) 2006-09-21
US7610436B2 (en) 2009-10-27
CN1834941A (zh) 2006-09-20
JP2006260468A (ja) 2006-09-28
JP4748708B2 (ja) 2011-08-17

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190317