HK1094050A1 - Semiconductor device having flash memory - Google Patents
Semiconductor device having flash memoryInfo
- Publication number
- HK1094050A1 HK1094050A1 HK06114107.5A HK06114107A HK1094050A1 HK 1094050 A1 HK1094050 A1 HK 1094050A1 HK 06114107 A HK06114107 A HK 06114107A HK 1094050 A1 HK1094050 A1 HK 1094050A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- semiconductor device
- flash memory
- flash
- memory
- semiconductor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005080453A JP4748708B2 (ja) | 2005-03-18 | 2005-03-18 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1094050A1 true HK1094050A1 (en) | 2007-03-16 |
Family
ID=37002693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK06114107.5A HK1094050A1 (en) | 2005-03-18 | 2006-12-22 | Semiconductor device having flash memory |
Country Status (4)
Country | Link |
---|---|
US (1) | US7610436B2 (xx) |
JP (1) | JP4748708B2 (xx) |
CN (1) | CN100517270C (xx) |
HK (1) | HK1094050A1 (xx) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010026794A (ja) * | 2008-07-18 | 2010-02-04 | Sony Computer Entertainment Inc | メモリ制御装置及び方法、コンピュータプログラム |
WO2009104330A1 (ja) | 2008-02-20 | 2009-08-27 | 株式会社ソニー・コンピュータエンタテインメント | メモリ制御方法及び装置、メモリアクセス制御方法、コンピュータプログラム、記録媒体 |
JP2010020586A (ja) * | 2008-07-11 | 2010-01-28 | Nec Electronics Corp | データ処理装置 |
JP2011002945A (ja) * | 2009-06-17 | 2011-01-06 | Renesas Electronics Corp | 半導体装置 |
WO2011007511A1 (ja) | 2009-07-16 | 2011-01-20 | パナソニック株式会社 | メモリコントローラ、不揮発性記憶装置、アクセス装置、不揮発性記憶システム |
JP2011154547A (ja) * | 2010-01-27 | 2011-08-11 | Toshiba Corp | メモリ管理装置及びメモリ管理方法 |
US8321626B2 (en) * | 2010-03-31 | 2012-11-27 | Gainspan Corporation | Management of configuration data using persistent memories requiring block-wise erase before rewriting |
JP5366159B2 (ja) * | 2011-09-06 | 2013-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置及びマイクロコンピュータ |
JP2015082166A (ja) * | 2013-10-22 | 2015-04-27 | ルネサスエレクトロニクス株式会社 | データ格納用フラッシュメモリの管理方法およびそのプログラム |
CN109086004A (zh) * | 2018-07-19 | 2018-12-25 | 江苏华存电子科技有限公司 | 一种闪存中块类型的识别方法 |
CN113227984B (zh) * | 2018-12-22 | 2023-12-15 | 华为技术有限公司 | 一种处理芯片、方法及相关设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09231113A (ja) * | 1995-12-22 | 1997-09-05 | Dainippon Printing Co Ltd | Icカード |
JP3954698B2 (ja) * | 1997-08-29 | 2007-08-08 | パナソニック コミュニケーションズ株式会社 | メモリー制御装置 |
US6226728B1 (en) * | 1998-04-21 | 2001-05-01 | Intel Corporation | Dynamic allocation for efficient management of variable sized data within a nonvolatile memory |
JP2002244935A (ja) * | 2001-02-20 | 2002-08-30 | Mitsubishi Electric Corp | 記憶管理装置および記憶管理方法 |
JP2002334024A (ja) | 2001-05-11 | 2002-11-22 | Denso Corp | 電子制御装置 |
JP2004164493A (ja) * | 2002-11-15 | 2004-06-10 | Wescom Inc | 不揮発性メモリのデータ管理システム、不揮発性メモリのデータ管理方法、およびそのプログラム |
JP4419415B2 (ja) * | 2003-03-28 | 2010-02-24 | 三菱電機株式会社 | 記録方式 |
JP4213532B2 (ja) * | 2003-07-15 | 2009-01-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
2005
- 2005-03-18 JP JP2005080453A patent/JP4748708B2/ja active Active
-
2006
- 2006-03-17 CN CNB2006100596617A patent/CN100517270C/zh not_active Expired - Fee Related
- 2006-03-17 US US11/377,434 patent/US7610436B2/en active Active
- 2006-12-22 HK HK06114107.5A patent/HK1094050A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN100517270C (zh) | 2009-07-22 |
US20060212646A1 (en) | 2006-09-21 |
US7610436B2 (en) | 2009-10-27 |
CN1834941A (zh) | 2006-09-20 |
JP2006260468A (ja) | 2006-09-28 |
JP4748708B2 (ja) | 2011-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20190317 |