GB439457A - Improvements in or relating to electrical amplifiers and other control arrangements and devices - Google Patents

Improvements in or relating to electrical amplifiers and other control arrangements and devices

Info

Publication number
GB439457A
GB439457A GB6815/35A GB681535A GB439457A GB 439457 A GB439457 A GB 439457A GB 6815/35 A GB6815/35 A GB 6815/35A GB 681535 A GB681535 A GB 681535A GB 439457 A GB439457 A GB 439457A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
condenser
march
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6815/35A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB439457A publication Critical patent/GB439457A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
    • H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
    • H02G3/02—Details
    • H02G3/08—Distribution boxes; Connection or junction boxes
    • H02G3/081—Bases, casings or covers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Glass Compositions (AREA)

Abstract

439,457. Non-contact-making relays. HEIL, O., 21, Jagowstrasse, Grunewald, Berlin. March 4, 1935, No. 6815. Convention date, March 2, 1934. [Class 40 (iv)] The electrical resistance of a semi-conductor 3 forming one electrode of a condenser is varied by alternating potential applied across the condenser, thus giving rise to variations in a local circuit through the semi-conductor and a battery 4. The semi-conductor 3 is in the form of a thin layer placed between metal electrodes 1, 2, and is separated from the other or control electrode 6 of the condenser by a thin layer of insulation of high dielectric constant. Air or vacuum insulation may be employed. Control electrodes may be disposed on both sides of the semi-conductor, and the same or different alternating potentials may be applied to them. The semi-conductors comprise tellurium, iodine, cuprous oxide, vanadium pentoxide and other substances having a negative temperature coefficient of resistance, and substances which exhibit the Hall effect with a positive coefficient.
GB6815/35A 1934-03-02 1935-03-04 Improvements in or relating to electrical amplifiers and other control arrangements and devices Expired GB439457A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE439457X 1934-03-02

Publications (1)

Publication Number Publication Date
GB439457A true GB439457A (en) 1935-12-06

Family

ID=6507313

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6815/35A Expired GB439457A (en) 1934-03-02 1935-03-04 Improvements in or relating to electrical amplifiers and other control arrangements and devices

Country Status (3)

Country Link
BE (1) BE408194A (en)
FR (1) FR786454A (en)
GB (1) GB439457A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524034A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductor materials
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2934723A (en) * 1956-10-24 1960-04-26 Bell Telephone Labor Inc Attenuator
US2935624A (en) * 1955-08-26 1960-05-03 Forman Ralph Electrostatically-controlled resistance tube
US2985783A (en) * 1956-07-30 1961-05-23 Westinghouse Electric Corp Thin screen members
US3001134A (en) * 1958-10-10 1961-09-19 Sylvania Electric Prod Semiconductor device
US3001135A (en) * 1958-05-21 1961-09-19 Sylvania Electric Prod Device for measuring electrical power
US3014188A (en) * 1958-09-12 1961-12-19 Westinghouse Electric Corp Variable q microwave cavity and microwave switching apparatus for use therewith
US3258663A (en) * 1961-08-17 1966-06-28 Solid state device with gate electrode on thin insulative film
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
JPS5124884A (en) * 1974-08-23 1976-02-28 Hosiden Electronics Co

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE971775C (en) * 1942-09-22 1959-03-26 Hildegard Koepke Dr Device for amplifying electrical currents and voltages
DE973206C (en) * 1949-05-31 1959-12-24 Siemens Ag Adjustable resistance
US3648124A (en) * 1970-06-10 1972-03-07 Ibm Gated metal-semiconductor transition device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2524033A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524034A (en) * 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductor materials
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
DE966492C (en) * 1948-02-26 1957-08-14 Western Electric Co Electrically controllable switching element made of semiconductor material
US2691750A (en) * 1948-08-14 1954-10-12 Bell Telephone Labor Inc Semiconductor amplifier
US2659774A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Bidirectional transistor amplifier
US2659773A (en) * 1949-06-07 1953-11-17 Bell Telephone Labor Inc Inverted grounded emitter transistor amplifier
US2935624A (en) * 1955-08-26 1960-05-03 Forman Ralph Electrostatically-controlled resistance tube
US2985783A (en) * 1956-07-30 1961-05-23 Westinghouse Electric Corp Thin screen members
US2934723A (en) * 1956-10-24 1960-04-26 Bell Telephone Labor Inc Attenuator
US3001135A (en) * 1958-05-21 1961-09-19 Sylvania Electric Prod Device for measuring electrical power
US3014188A (en) * 1958-09-12 1961-12-19 Westinghouse Electric Corp Variable q microwave cavity and microwave switching apparatus for use therewith
US3001134A (en) * 1958-10-10 1961-09-19 Sylvania Electric Prod Semiconductor device
US3258663A (en) * 1961-08-17 1966-06-28 Solid state device with gate electrode on thin insulative film
DE1464363B1 (en) * 1961-08-17 1970-09-24 Rca Corp Unipolar transistor
US3289053A (en) * 1963-12-26 1966-11-29 Ibm Thin film transistor
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
JPS5124884A (en) * 1974-08-23 1976-02-28 Hosiden Electronics Co
JPS5849036B2 (en) * 1974-08-23 1983-11-01 ホシデンキセイゾウ カブシキガイシヤ Hakumaku Transistor

Also Published As

Publication number Publication date
FR786454A (en) 1935-09-03
BE408194A (en)

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