BE408194A - - Google Patents
Info
- Publication number
- BE408194A BE408194A BE408194DA BE408194A BE 408194 A BE408194 A BE 408194A BE 408194D A BE408194D A BE 408194DA BE 408194 A BE408194 A BE 408194A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
- H02G3/02—Details
- H02G3/08—Distribution boxes; Connection or junction boxes
- H02G3/081—Bases, casings or covers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE439457X | 1934-03-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE408194A true BE408194A (en) |
Family
ID=6507313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE408194D BE408194A (en) | 1934-03-02 |
Country Status (3)
Country | Link |
---|---|
BE (1) | BE408194A (en) |
FR (1) | FR786454A (en) |
GB (1) | GB439457A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2094155A1 (en) * | 1970-06-10 | 1972-02-04 | Ibm |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE971775C (en) * | 1942-09-22 | 1959-03-26 | Hildegard Koepke Dr | Device for amplifying electrical currents and voltages |
BE484779A (en) * | 1948-02-26 | |||
US2524033A (en) * | 1948-02-26 | 1950-10-03 | Bell Telephone Labor Inc | Three-electrode circuit element utilizing semiconductive materials |
US2524035A (en) * | 1948-02-26 | 1950-10-03 | Bell Telphone Lab Inc | Three-electrode circuit element utilizing semiconductive materials |
US2691750A (en) * | 1948-08-14 | 1954-10-12 | Bell Telephone Labor Inc | Semiconductor amplifier |
DE973206C (en) * | 1949-05-31 | 1959-12-24 | Siemens Ag | Adjustable resistance |
US2659774A (en) * | 1949-06-07 | 1953-11-17 | Bell Telephone Labor Inc | Bidirectional transistor amplifier |
US2659773A (en) * | 1949-06-07 | 1953-11-17 | Bell Telephone Labor Inc | Inverted grounded emitter transistor amplifier |
US2935624A (en) * | 1955-08-26 | 1960-05-03 | Forman Ralph | Electrostatically-controlled resistance tube |
US2985783A (en) * | 1956-07-30 | 1961-05-23 | Westinghouse Electric Corp | Thin screen members |
US2934723A (en) * | 1956-10-24 | 1960-04-26 | Bell Telephone Labor Inc | Attenuator |
US3001135A (en) * | 1958-05-21 | 1961-09-19 | Sylvania Electric Prod | Device for measuring electrical power |
US3014188A (en) * | 1958-09-12 | 1961-12-19 | Westinghouse Electric Corp | Variable q microwave cavity and microwave switching apparatus for use therewith |
US3001134A (en) * | 1958-10-10 | 1961-09-19 | Sylvania Electric Prod | Semiconductor device |
NL282170A (en) * | 1961-08-17 | |||
US3289053A (en) * | 1963-12-26 | 1966-11-29 | Ibm | Thin film transistor |
US3484679A (en) * | 1966-10-03 | 1969-12-16 | North American Rockwell | Electrical apparatus for changing the effective capacitance of a cable |
JPS5849036B2 (en) * | 1974-08-23 | 1983-11-01 | ホシデンキセイゾウ カブシキガイシヤ | Hakumaku Transistor |
-
0
- BE BE408194D patent/BE408194A/xx unknown
-
1935
- 1935-03-01 FR FR786454D patent/FR786454A/en not_active Expired
- 1935-03-04 GB GB6815/35A patent/GB439457A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2094155A1 (en) * | 1970-06-10 | 1972-02-04 | Ibm |
Also Published As
Publication number | Publication date |
---|---|
GB439457A (en) | 1935-12-06 |
FR786454A (en) | 1935-09-03 |