GB2543682A - Epitaxial structure for improving efficiency drop of GaN-based LED - Google Patents
Epitaxial structure for improving efficiency drop of GaN-based LED Download PDFInfo
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- GB2543682A GB2543682A GB1700942.4A GB201700942A GB2543682A GB 2543682 A GB2543682 A GB 2543682A GB 201700942 A GB201700942 A GB 201700942A GB 2543682 A GB2543682 A GB 2543682A
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- 230000000903 blocking effect Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 74
- 239000011229 interlayer Substances 0.000 claims description 27
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 238000005036 potential barrier Methods 0.000 abstract description 9
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 230000037431 insertion Effects 0.000 abstract 3
- 238000003780 insertion Methods 0.000 abstract 3
- 238000004020 luminiscence type Methods 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 38
- 229910002601 GaN Inorganic materials 0.000 description 36
- 239000011777 magnesium Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Proposed is an epitaxial structure for improving the efficiency drop of an LED. The epitaxial structure comprises a substrate (10), and a GaN underlying layer, a superlattice stress relief layer (50), a multi-quantum well layer (60), a P-type InGaN insertion layer (70), a P-type electron blocking layer (80) and a P-shaped GaN layer (90) which are stacked in sequence on the substrate. The P-type InGaN insertion layer (70) is inserted between the last potential barrier of the multi-quantum well layer (60) and the P-type electron blocking layer (80), an In component of the P-type InGaN insertion layer (70) gradually increases from close to the multi-quantum well layer (60) to the electron blocking layer (80) and uses pulsed Mg-doping. As such, leakage of electrons to a P end can be reduced, and at the other hand, injection from a hole to an active region can be enhanced. The problem of the efficiency drop of a GaN-based LED can be solved, and the luminescence efficiency at a large current condition can be improved.
Description
EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF
GaN-BASED LED
TECHNICAL FIELD
The present invention relates to the manufacturing of gallium nitride (GaN)-based blue light-emitting diodes (LEDs) and, in particular, to an epitaxial structure that reduces efficiency droop in an LED.
BACKGROUND
Light-emitting diodes (LEDs) are solid-state semiconductor light-emitting devices utilizing semiconductor p-n junctions as light-emitting means which can directly convert electricity to light. Gallium nitride (GaN)-based high brightness LEDs are currently cutting-edge and the focus of the optoelectronics field or industry. At present, indium gallium nitride (InGaN)-based LEDs and GaN-based LEDs have gained dramatic improvements in light-emission efficiency. However, high-power GaN-based LEDs suffer from significant efficiency droop, i.e., a rapid decrease in internal quantum efficiency (IQE) upon a high incoming current. Previously, a number of mechanisms have been proposed to try to explain this phenomenon, including electric field polarization, electron leakage, non-uniform distribution of active region carriers, Auger non-radiative recombination, etc. In view of the current research, low hole-injection efficiency and leakage of electrons toward the p-terminal is one of the possible causes of efficiency droop at a high current.
In order to address insufficient electron blockage, some researchers have proposed electron blocking layers (EBLs). However, due to the presence of a polarized electric field at the heterojunction, such a conventional EBL will slopes downward and is hence still incapable of blocking the leakage of electrons towards the p-terminal when a high current flows into the device. In addition, such conventional EBL tends to have a wide forbidden band gap which hinders the injection of holes into the multiple quantum well layer.
SUMMARY OF THE INVENTION
It is an objective of the present invention to provide an epitaxial structure that reduces efficiency droop in a GaN-based LED and improves its light-emission efficiency under a high-current condition by, upon a high driving current, on one hand, better blocking the leakage of electrons toward a p-type terminal of the LED and, on the other hand, intensifying the injection of holes in a multiple quantum well layer thereof.
This objective is attained by an epitaxial structure for improving efficiency droop of a GaN-based LED according to the present invention. The epitaxial structure includes a substrate and, sequentially stacked on the substrate, a GaN underlayer, a superlattice layer for stress relief, a multiple quantum well layer, a p-type InGaN interlayer, a p-type electron blocking layer and a p-type GaN layer.
Further, the p-type InGaN interlayer may be pulse-doped with Mg and may have an In content varying gradually from 0% to 7%. Moreover, the p-type InGaN interlayer may have a thickness of from 3 nm to 12 nm. Further, the Mg dopant may have a concentration of from lei8 cm'3 to le 19 cm'3.
Further, the electron blocking layer may be formed from a p-AlGaN layer or a superlattice structure formed of p-AlGaN and p-GaN layers, and the p-type electron blocking layer may have a thickness of from 30 nm to 80 nm.
Further, the p-type GaN layer may be doped with Mg of a concentration of from lel9 cm'3 to 6e20cm"3 and may have a thickness of from 30 nm to 50 nm.
Compared to the prior art, the present invention offers mainly the following benefits: as the p-type InGaN interlayer formed between the multiple quantum well layer and the p-type electron blocking layer has a gradually varying In content, a polarized electric field resulting from lattice mismatch between a GaN potential barrier layer and the interlayer can be reduced; and InGaN has a narrower forbidden band gap compared to the conventional electron blocking layers, which results in an increase in hole injection efficiency, prevention of electrons from leaking toward the p-terminal and increased light-emission efficiency of the GaN-based LED when operating at a high current.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. 1 is a cutaway view schematically illustrating an epitaxial structure that reduces efficiency droop in a GaN-based LED in accordance with an embodiment of the present invention.
Fig. 2 is a flow chart graphically showing a process for fabricating an epitaxial structure that reduces efficiency droop in a GaN-based LED in accordance with an embodiment of the present invention.
Figs. 3 to 6 are cutaway views schematically illustrating a process for fabricating an epitaxial structure that reduces efficiency droop in a GaN-based LED in accordance with an embodiment of the present invention.
DETAILED DESCRIPTION
Epitaxial structures that reduce efficiency droop in GaN-Based LEDs according to the present invention will be described in greater detail in the following description which presents preferred embodiments of the invention and is to be read in conjunction with the accompanying drawings. It is to be appreciated that those of skill in the art can make changes in the invention disclosed herein while still obtaining the beneficial results thereof. Therefore, the following description shall be construed as being intended to be widely known by those skilled in the art rather than as limiting the invention.
For simplicity and clarity of illustration, not all features of the disclosed specific embodiments are described. Additionally, descriptions and details of well-known functions and structures are omitted to avoid unnecessarily obscuring the invention. The development of any specific embodiment of the present invention includes specific decisions made to achieve the developer’s specific goals, such as compliance with system related and business related constraints, which will vary from one implementation to another. Moreover, such a development effort might be complex and time consuming but would nevertheless be a routine undertaking for those of ordinary skill in the art.
The present invention will be further described in the following paragraphs by way of example with reference to the accompanying drawings. Features and advantages of the invention will be more apparent from the following detailed description, and from the appended claims. Note that the accompanying drawings are provided in a very simplified form not necessarily presented to scale, with the only intention of facilitating convenience and clarity in explaining a few illustrative examples of the invention.
As mentioned in the Background section, under the effect of a high incoming current, an excess of electrons which are abundant in the active region will leak to the p-terminal. At the same time, holes that are relatively great in effective mass are injected into the active region in a non-uniform manner in which most of them are trapped in the potential wells nearer to the p-terminal.
Referring to Fig. 1, in order to overcome these problems, the embodiment provides an epitaxial structure that reduces efficiency droop in a GaN-based LED.
The epitaxial structure includes a substrate 10 and, sequentially stacked on the substrate 10, a GaN underlayer, a superlattice layer 40 for stress relief, a multiple quantum well layer 50, a p-type InGaN interlayer 70, a p-type electron blocking layer 80 and a p-type GaN layer 90.
The p-type InGaN interlayer 70 may be pulse-doped (delta-doped) with magnesium (Mg) and include an In content gradient of from 0 % to 7 %. The p-type InGaN interlayer 70 may have a thickness between 3 nm and 12 nm, for example, 8 run, and a Mg dopant concentration in the range of from lei8 cm'3 to lel9cm'3. Delta-doping of Mg allows a high activation rate of Mg in the p-type InGaN interlayer 70 and less leakage of Mg to a last barrier layer of the multiple quantum well layer 60, thereby preventing its performance degradation under low currents. When the epitaxial structure is used to fabricate a chip operating at a low current, the p-type InGaN interlayer 70 may also not be doped with Mg. A portion of the p-type InGaN interlayer 70 that comes into contact with the multiple quantum well layer 60 has an In content of 0%, while a portion of the p-type InGaN interlayer 70 in contact with the subsequently formed electron blocking layer 80 has an In content of 7%. The remainder of the p-type InGaN interlayer 70 includes an In content gradient of from 0 % to 7 %. The In content gradient of the p-type InGaN interlayer 70 can help in reducing a polarized electric field resulting from lattice mismatch between the last barrier layer of the multiple quantum well layer 60 and the p-type InGaN interlayer 70. Additionally, InGaN has a relatively narrow forbidden band gap which, on one hand, raises a potential barrier for electrons to leak to the p-terminal and, on the other hand, lower a potential barrier for the injection of holes into the N-underlayer. As a result, higher hole injection efficiency, prevention of electron leakage toward the p-terminal and increased light-emission efficiency can be obtained.
According to this embodiment, unsatisfactory efficiency under a high current can be improved singly by the p-type InGaN interlayer 70. Therefore, it has the advantages of a simple process and easy achievability.
Referring to Fig. 2, a method for fabricating an epitaxial structure that reduces efficiency droop in a GaN-based LED according to an embodiment includes the following steps.
In S100: a substrate 10 is provided and a GaN buffer layer 20 is grown on the substrate, wherein the GaN buffer layer 20 has a thickness of about 15 nm to 50 nm, as shown in Fig. 3.
In S200: a non-doped GaN layer 30 and a GaN layer 40 n-doped with silicon (Si) are sequentially formed over the GaN buffer layer 20. A total thickness of the non-doped GaN layer 30 and the n-doped GaN layer 40 can range from 1.5pm to 4.5 pm such as, for example, 3 pm.
In S300: a superlattice layer 50 for stress relief is formed on the n-doped GaN layer 40, as shown in Fig. 4.
The superlattice layer 50 can consist of periodic pairs of an InGaN layer having an In content varying in the range of 0% to 7% and a GaN layer. The superlattice layer 50 may have 3 to 20, for example, 10, such periodic pairs.
In S400: a multiple quantum well layer 60 is formed on the superlattice layer 50, as shown in Fig. 5.
The multiple quantum well layer 60 may consist of periodic pairs of a potential well layer and an overlying potential barrier layer. The multiple quantum well layer 60 may have 5 to 18, for example, 8, such periodic pairs. Each potential well layer may be formed of InGaN and have a thickness in the range of from 2 nm to 5 nm. Each potential barrier layer may be formed of GaN and have a thickness in the range of from 6 nm to 14 nm. In the multiple quantum well layer 60, all the other potential barriers than the last barrier layer (i.e., the potential barrier layer adjacent to a subsequently formed p-type InGaN interlayer 70) may be n-doped with silicon (Si) to an extent of lel7 cm'3 to 2el8cm'3.
In S500, a p-type InGaN interlayer 70 is formed on the multiple quantum well layer 60, as shown in Fig. 7.
The p-type InGaN interlayer 70 may be pulse-doped (delta-doped) with Mg to a concentration of 2el8 cm'3 to lel9cm"3 and have a thickness between 3 nm and 12 nm, for example, 8 nm
In S600: an electron blocking layer 80 and a p-type GaN layer 90 are sequentially formed over the p-type InGaN interlayer 70, thereby completing the epitaxial structure, as shown in Fig. 1.
The electron blocking layer 80 overlying the p-type InGaN interlayer 70 may be a p-GaN layer doped with aluminum (Al) (p-AlGaN), a p-type GaN layer (p-GaN) or a superlattice structure formed of a combination of them (p-AlGaN/GaN), and the electron blocking layer 80 has a thickness ranging from 30 nm to 80 nm, for example, 50 nm. The electron blocking layer 80 can increase the ability to block the leakage of electrons toward the p-terminal and thereby further improve the light-emission efficiency.
The p-type GaN layer 90 overlying the electron blocking layer 80 may be GaN p-doped with Mg of a concentration ranging from lel9 cm 3 to 6el9 cm 3. The p-type GaN layer 90 may have a thickness between 30 nm and 50 nm such as, for example, 40 nm, thereby completing the epitaxial structure.
In summary, in the epitaxial structures that reduce efficiency droop in GaN-based LEDs according to the embodiments of the present invention, because the p-type InGaN interlayer formed between the multiple quantum well layer and the p-type electron blocking layer has an In content varying in a gradual manner, a polarized electric field resulting from lattice mismatch between the GaN potential barrier layer and the interlayer can be reduced. In addition, compared to the conventional electron blocking layers, InGaN has a narrower forbidden band gap which results in an increase in hole injection efficiency, prevention of electrons from leaking toward the p-terminal and increased light-emission efficiency of the GaN-based LEDs when operating at a high current.
The foregoing description presents merely a preferred embodiment of the present invention and does not limit the scope of the invention in any way. All equivalent substitutions or modifications made to the subject matter disclosed herein by those of ordinary skill in the art without departing from the scope of the present invention fall within the scope of the invention.
Claims (7)
1. An epitaxial structure for improving efficiency droop of a GaN-based light-emitting diode, the epitaxial structure comprising a substrate and, sequentially stacked on the substrate, a GaN underlayer, a superlattice layer for stress relief, a multiple quantum well layer, a p-type InGaN interlayer, a p-type electron blocking layer and a p-type GaN layer.
2. The epitaxial structure of claim 1, wherein the p-type InGaN interlayer is pulse-doped with Mg.
3. The epitaxial structure of claim 1, wherein the Mg dopant has a concentration of from lei 8 cm'3 to lel9cm'3.
4. The epitaxial structure of claim 1, wherein the p-type InGaN interlayer has an In content varying gradually from 0% to 7%.
5. The epitaxial structure of claim 1, wherein the p-type InGaN interlayer has a thickness of from 3 nm to 12 nm.
6. The epitaxial structure of claim 1, wherein the p-type electron blocking layer is formed from a p-AlGaN layer or a superlattice structure formed of p-AlGaN and p-GaN layers, and the p-type electron blocking layer has a thickness of from 30 nm to 80 nm.
7. The epitaxial structure of claim 1, wherein the p-type GaN layer is doped with Mg of a concentration of from lel9 cm"3 to 6e20cm'3 and has a thickness of from 30 nm to 50 nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410356966.9A CN104134732B (en) | 2014-07-24 | 2014-07-24 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
| PCT/CN2015/084486 WO2016011924A1 (en) | 2014-07-24 | 2015-07-20 | EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB201700942D0 GB201700942D0 (en) | 2017-03-08 |
| GB2543682A true GB2543682A (en) | 2017-04-26 |
| GB2543682B GB2543682B (en) | 2019-04-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| GB1700942.4A Expired - Fee Related GB2543682B (en) | 2014-07-24 | 2015-07-20 | Epitaxial structure for improving efficiency drop of GaN-based LED |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN104134732B (en) |
| DE (1) | DE112015003419T5 (en) |
| GB (1) | GB2543682B (en) |
| WO (1) | WO2016011924A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104134732B (en) * | 2014-07-24 | 2017-09-19 | 映瑞光电科技(上海)有限公司 | It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines |
| CN104638082B (en) * | 2015-02-04 | 2017-10-13 | 映瑞光电科技(上海)有限公司 | The preparation method of low-voltage GaN base LED epitaxial structures |
| CN105405939B (en) * | 2015-12-02 | 2018-01-12 | 华灿光电(苏州）有限公司 | A kind of light emitting diode and its manufacture method |
| CN105514235A (en) * | 2015-12-25 | 2016-04-20 | 扬州德豪润达光电有限公司 | Multiple-quantum well structure for optoelectronic device |
| CN105789391B (en) * | 2016-04-28 | 2018-06-26 | 聚灿光电科技（宿迁）有限公司 | GaN base LED epitaxial structure and its manufacturing method |
| CN105870269B (en) * | 2016-05-26 | 2018-08-28 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growing method of hole injection |
| CN105932118B (en) * | 2016-06-13 | 2018-01-30 | 湘能华磊光电股份有限公司 | Improve the LED epitaxial growth methods of hole injection |
| CN106299052B (en) * | 2016-09-22 | 2018-11-27 | 绍兴市上虞宜美照明电器有限公司 | A kind of GaN epitaxial structure and preparation method for LED |
| CN107204391B (en) * | 2017-05-24 | 2018-12-28 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growth method |
| CN107146836A (en) * | 2017-05-26 | 2017-09-08 | 华南理工大学 | GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof |
| CN110098293B (en) * | 2019-04-26 | 2021-03-19 | 中国电子科技集团公司第三十八研究所 | LED structure with heteroepitaxy NIP junction type multi-quantum well light-emitting layer terminal |
| CN110783432B (en) * | 2019-11-04 | 2022-02-22 | 马鞍山杰生半导体有限公司 | Ultraviolet LED epitaxial wafer and preparation method thereof |
| CN111710762B (en) * | 2020-06-28 | 2021-10-15 | 中国科学院半导体研究所 | Group III nitride optoelectronic devices with p-type polarization doping |
| CN112436079A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | GaN-based LED epitaxial structure of inverted triangular potential barrier and growth method thereof |
| CN112467004B (en) * | 2020-10-31 | 2022-06-07 | 扬州大学 | GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof |
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| CN113410345B (en) * | 2021-06-15 | 2022-08-26 | 厦门士兰明镓化合物半导体有限公司 | Ultraviolet semiconductor light emitting element |
| CN115224171B (en) * | 2022-09-20 | 2022-11-29 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN115347097B (en) * | 2022-10-18 | 2023-03-14 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN117410413B (en) * | 2023-12-14 | 2024-03-08 | 江西兆驰半导体有限公司 | LED epitaxial wafer and preparation method thereof |
| CN117810325B (en) * | 2024-02-29 | 2024-05-28 | 江西兆驰半导体有限公司 | High-light-efficiency light-emitting diode epitaxial wafer and preparation method thereof |
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| CN102157646A (en) * | 2011-05-03 | 2011-08-17 | 映瑞光电科技(上海)有限公司 | Nitride LED structure and preparation method thereof |
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2015
- 2015-07-20 WO PCT/CN2015/084486 patent/WO2016011924A1/en active Application Filing
- 2015-07-20 DE DE112015003419.6T patent/DE112015003419T5/en not_active Withdrawn
- 2015-07-20 GB GB1700942.4A patent/GB2543682B/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| GB201700942D0 (en) | 2017-03-08 |
| CN104134732B (en) | 2017-09-19 |
| WO2016011924A1 (en) | 2016-01-28 |
| CN104134732A (en) | 2014-11-05 |
| DE112015003419T5 (en) | 2017-05-11 |
| GB2543682B (en) | 2019-04-17 |
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| PCNP | Patent ceased through non-payment of renewal fee |
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