CN105870269B - Improve the LED epitaxial growing method of hole injection - Google Patents
Improve the LED epitaxial growing method of hole injection Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The present invention discloses the LED epitaxial growing method for improving hole injection, including：After Sapphire Substrate annealing；It is passed through TMGa and NH3Growing low temperature GaN nucleating layers；After in-situ annealing handles 5 10min, epitaxial growth high temperature GaN buffer layers；It is passed through NH3 and TMGa, the undoped u GaN layers of growth high temperature；It is passed through NH3, TMGa and SiH4, the n GaN layers of growth Si doping；Grow multicycle Quantum Well MQW luminescent layer；Growth thickness is that mixing for 20 120nm and does not mix the superlattice layer of Mg at Mg；Grow p-type AlGaN layer；Grow high temperature p-type GaN layer；Grow p-type GaN contact layers；Terminate growth after carrying out 5 10min of annealing in nitrogen atmosphere；Single light-emitting diode chip for backlight unit is made in obtained light emitting diode epitaxial structure after over cleaning, deposition, lithography and etching.The present invention improves the luminous efficiency of LED.
Description
Technical field
The present invention relates to the technical fields of semiconductor chip fabrication, more particularly, to a kind of hair of raising hole injection
Optical diode epitaxial growth method.
Background technology
Light emitting diode (Light-Emitting Diode, abbreviation LED) converting electrical energy into the half of luminous energy as a kind of
Conducting electrons device, compared with traditional incandescent lamp bulb and neon lamp, low (some is more several with its operating voltage for light emitting diode
Volt), operating current very little (several milliamperes of some only zeros can shine), shock resistance and anti-seismic performance are good, reliability is high, the service life
Feature that is long, can easily modulating luminous power is very popular.With flourishing for third generation semiconductor technology, semiconductor
The advantages that illumination is with energy-saving and environmental protection, high brightness, long lifespan, becomes the focus of social development, has also driven entire industry upper, middle and lower
The development of trip industry.LED chip based on GaN (gallium nitride) base is semiconductor lighting " power ", and in recent years, performance obtains
To be substantially improved, production cost also constantly reduces, come into huge numbers of families for semiconductor lighting and be made that outstanding contributions.But it is
The market ratio shared by LED illumination is improved, accelerating conventional light sources, the LED components such as replacement incandescent lamp, fluorescent lamp also needs further
Light efficiency is promoted, the cost per lumen is reduced.
As shown in Figures 1 and 2, Fig. 1 is the flow diagram of traditional LED structure epitaxial growth method；Fig. 2 is to pass through tradition
The epitaxial structure for the LED that LED structure epitaxial growth method is prepared.Wherein, traditional LED structure epitaxial growth method includes such as
Lower step：
Under the conditions of step 101, temperature are 1050-1150 DEG C, Sapphire Substrate is annealed in hydrogen atmosphere, is cleaned
Substrate surface.
Temperature is dropped to 500-620 DEG C by step 102, is passed through NH3And TMGa, growth pressure be 400-650Torr,
Under conditions of V/III molar ratio is 500-3000, growing the low temperature GaN nucleating layers of 20-40nm thickness, (V/III race's element ratio is
N3-With Ga3+The ratio between, in LED field, usually used group V source is NH3, III clan source be TMGa).
After step 103, the growth of low temperature GaN nucleating layers, stopping is passed through TMGa, carries out in-situ annealing processing：Annealing temperature
Degree is increased to 1000-1100 DEG C, annealing time 5-10min；After annealing, the temperature was then adjusted to 900-1050 DEG C, continue to lead to
Enter TMGa, under conditions of growth pressure is 400-650Torr, V/III molar ratio is 500-3000, grows epitaxial growth thickness
High temperature GaN buffer layers between 0.2-1um.
After step 104, high temperature GaN buffer growths, it is passed through NH3And TMGa, it is 1050-1200 DEG C, gives birth in temperature
Under conditions of long pressure is 100-500Torr, V/III molar ratio is 300-3000, growth thickness is the undoped u- of 1-3um
GaN layer.
After the undoped GaN layer growth of step 105, high temperature, it is passed through NH3, TMGa and SIH4, it is 1050- in growth temperature
1200 DEG C, growth pressure 100-600Torr, V/III molar ratio be that 300-3000, Si doping concentration are 8*1018-2*1019cm-3Under conditions of, the n-GaN layers that one layer of doping concentration of growth is stablized, thickness 2-4um.
It is that (sources MO i.e. high-purity metal organic compound is named in the sources MO with TMIn, TEGa after step 106, n-GaN layers of growth
Compound semiconductor fine structure material is metal organic chemical vapor deposition (abbreviation MOCVD), Metal Organic Molecular Beam extension
The backing material of the technology growths Semiconductor Microstructure Materials such as (abbreviation MOMBE)), silane be N type dopant grow the multicycle amount
Sub- trap MQW luminescent layers.Luminescent layer multicycle Quantum Well by 5-15 period InyGa1-yN/GaN traps build structure composition, wherein
Quantum Well InyGa1-yThe thickness of N (y=0.1-0.3) layer is 2-5nm, and growth temperature is 700-800 DEG C, growth pressure 100-
500Torr, V/III molar ratio are 300-5000；The thickness of barrier layer GaN is 8-15nm, and growth temperature is 800-950 DEG C, growth
Pressure is 100-500Torr, and V/III molar ratio is 300-5000, and barrier layer GaN carries out low concentration Si doping, and (Si groups are divided into
0.5%-3%).
After step 107, multicycle Quantum Well MQW light emitting layer grown, with TMAl, TMGa and CP2Mg is the sources MO, in life
Long temperature is 900-1100 DEG C, growth time 3-10min, and for pressure in 20-200Torr, V/III molar ratio is 1000-20000
Under conditions of, growth thickness is the p-type AlGaN layer of 50-200nm.Wherein, the molar constituent of Al is 10%- in p-type AlGaN layer
30%, the molar constituent of Mg is 0.05%-0.3%.Wherein, the electronic barrier layer of the p-type AlGaN layer i.e. LED.
After step 108, the growth of p-type AlGaN layer, TMGa and CP are used2Mg is the sources MO, is 850- in growth temperature
1000 DEG C, growth pressure 100-500Torr, V/III molar ratio be that 300-5000, Mg doping concentration are 1017-1018cm-3's
Under the conditions of, growth thickness is the high temperature p-type GaN layer of 100-800nm.
After step 109, the growth of p-type GaN layer, TMGa and CP are used2Mg is the sources MO, is 850-1050 in growth temperature
DEG C, under conditions of growth pressure 100-500Torr, V/III molar ratio be 1000-5000, growth thickness is the p-type of 5-20nm
GaN contact layers.
After step 110, epitaxial growth, the temperature of reative cell is down to 650-800 DEG C, is carried out using pure nitrogen gas atmosphere
5-10min is made annealing treatment, room temperature is then down to, terminates growth；Epitaxial structure is follow-up through over cleaning, deposition, lithography and etching etc.
Single small-size chips are made in semiconducter process.
In conjunction with shown in Fig. 2, the epitaxial structure for the LED being prepared by traditional LED structure epitaxial growth method includes：
201 be sapphire substrate, 202 be GaN buffer layers, 203 be u-GaN layers, 204 be n-GaN layers, 205 be Quantum Well multicycle amount
Sub- trap MQW luminescent layers, 206 be p-type AlGaN layer, 207 be the p-type GaN layer of high temperature dopant Mg, 208 be p-type GaN contact layers.
Currently, LED requires LED chip driving voltage low in the market, especially under high current, driving voltage is the smaller the better, light
The higher the better for effect.LED market values are presented as (light efficiency)/unit price, and light efficiency is better, and price is higher, so LED specular removals are always
It is the target that LED producers and LED research institutes of universities and colleges are pursued.Specular removal means that luminous power is high, driving voltage is low, but luminous power
It is limited to a certain extent by P layers of hole concentration, because LED, which shines, is primarily due to electrons and holes compound hair in MQW
Light.Driving voltage is limited by P layers of hole mobility to a certain extent, injected holes concentration increase, luminescent layer hole and
The combined efficiency of electronics will increase；Luminous power increases, and P layers of hole mobility, which increase driving voltage, to be reduced.
Therefore it provides the LED epitaxial of a kind of operating voltage reducing LED, the luminous efficiency for improving LED is grown
Method is this field urgent problem to be solved.
Invention content
In view of this, the present invention provides a kind of LED epitaxial growing method of raising hole injection, solve
Conventional LED chip hole mobility is low, the low disadvantage of the operating voltage height of LED, luminous efficiency.
In order to solve the above-mentioned technical problem, the present invention proposes a kind of LED epitaxial growth side of raising hole injection
Method, including：
Under conditions of temperature is 1050-1150 DEG C, the hydrogen gas for being 99.999% or more in purity by Sapphire Substrate
After being annealed in atmosphere, substrate surface is cleaned；
500-620 DEG C is reduced the temperature to, is passed through TMGa and purity as 99.999% or more NH3, growth thickness 20-
The low temperature GaN nucleating layers of 40nm；
Stopping is passed through TMGa, raises the temperature to 1000-1100 DEG C and carries out in-situ annealing processing 5-10min；In-situ annealing
Later the temperature was then adjusted to 900-1050 DEG C, epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um；
It is passed through NH3 and TMGa, growth thickness is the undoped u-GaN layers of the high temperature of 1-3um；
It is passed through NH3, TMGa and SiH4, grow the n-GaN layers that Si doping concentrations are stable and thickness is 2-4um；
The use of TMIn, TEGa is the sources MO, SiH4Multicycle Quantum Well MQW luminescent layer is grown for N type dopant；
Use TMIn, TMGa and CP2Mg be the sources MO, growth temperature be 700-900 DEG C, pressure 100-500Torr,
V/III molar ratio be 300-5000, Mg molar constituent be 0.3%-1%, In molar constituent be 1-10% under conditions of, it is raw
Long thickness is that mixing for 20-120nm and does not mix the InGaN of Mg at Mg:The superlattice layer of Mg/InGaN, wherein InGaN:Mg/InGaN
Superlattice layer thickness ratio be 1:1-5:1, periodicity 4-50；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the p-type AlGaN layer of 50-200nm；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the high temperature p-type GaN layer of 100-800nm, wherein Mg doping is dense
Degree is 1017-1018cm-3；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the p-type GaN contact layers of 5-20nm；
Terminate growth after carrying out annealing 5-10min in the nitrogen atmosphere that purity is 99.999% or more；
Single light-emitting diodes are made in obtained light emitting diode epitaxial structure after over cleaning, deposition, lithography and etching
Tube chip.
Further, wherein the growth thickness is 20-40nm low temperature GaN nucleating layers, including：
Under conditions of growth pressure is 400-650Torr, V/III molar ratio is 500-3000, growth thickness 20-40nm is thick
Low temperature GaN nucleating layers.
Further, wherein the epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um, including：
Continue to be passed through TMGa, under conditions of pressure is 400-650Torr, V/III molar ratio is 500-3000, extension life
Long thickness is the high temperature GaN buffer layers of 0.2-1um.
Further, wherein the growth thickness is the undoped u-GaN layers of the high temperature of 1-3um, including：
Growth temperature is 1050-1200 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-3000's
Under the conditions of, growth thickness is the undoped u-GaN layers of the high temperature of 1-3um.
Further, wherein the n-GaN layers that the growth doping concentration is stable and thickness is 2-4um, including：
Growth temperature be 1050-1200 DEG C, growth pressure 100-600Torr, V/III molar ratio be 300-3000,
Si doping concentrations are 8*1018-2*1019cm-3Under conditions of, growth thickness is the n-GaN layers of 2-4um.
Further, wherein the growth multicycle Quantum Well MQW luminescent layers, including：
The multicycle Quantum Well MQW luminescent layers by 5-15 period InyGa1-yN/GaN Quantum Well/barrier layer structure group
At y=0.1-0.3；Wherein,
It is 700-800 DEG C in growth temperature, the item that growth pressure 100-500Torr, V/III molar ratio are 300-5000
Under part, growth thickness is the Quantum Well In of 2-5nmyGa1-yN layers；
In the item that growth temperature is 800-950 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-5000
Under part, growth thickness is the barrier layer GaN of 8-15nm, and carries out the low concentration Si that Si groups are divided into 0.5%-3% to the barrier layer GaN
Doping.
Further, wherein the growth thickness is the p-type AlGaN layer of 50-200nm, including：
Growth temperature be 900-1100 DEG C, pressure 20-200Torr, V/III molar ratio be 1000-20000, growth
Under conditions of time is 3-10min, growth thickness is the p-type AlGaN layer of 50-200nm, wherein the Al of the p-type AlGaN layer
Molar constituent be 10%-30%, the molar constituent of Mg is 0.05%-0.3%.
Further, wherein the growth thickness is the high temperature p-type GaN layer of 100-800nm, including：
Growth temperature is 850-1000 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-5000's
Under the conditions of, growth thickness is the high temperature p-type GaN layer of 100-800nm.
Further, wherein the growth thickness is the p-type GaN contact layers of 5-20nm, including：
Growth temperature is 850-1050 DEG C, growth pressure 100-500Torr, V/III molar ratio are 1000-5000's
Under the conditions of, growth thickness is the p-type GaN contact layers of 5-20nm.
Further, wherein described to carry out annealing 5-10min in the nitrogen atmosphere that purity is 99.999% or more
After terminate to grow, including：
Reaction temperature is down to 650-800 DEG C, is made annealing treatment in the nitrogen atmosphere that purity is 99.999% or more
After 5-10min, it is down to room temperature and terminates to grow.
Compared with prior art, the of the invention LED epitaxial growing method for improving hole injection, realize as
Under advantageous effect：
(1) the LED epitaxial growing method of the present invention for improving hole injection is grown in multiple quantum well layer
After complete, one layer of InGaN for mixing Mg and not mixing Mg is grown:Mg/InGaN super lattice layer structures not only provide hole concentration, but also logical
The growth raising holoe carrier for crossing superlattices is extending transversely under superlattices effect, has being uniformly distributed using hole, carries
High hole diffusion length and hole mobility reduce the work electricity of LED to improve the hole Injection Level of quantum well region
Pressure, the luminous efficiency for improving LED.
(2) the LED epitaxial growing method of the present invention for improving hole injection, by LED epitaxial layers
Growth mixes Mg and does not mix the InGaN of Mg:Water is injected in Mg/InGaN super lattice layer structures, the hole to improve quantum well region
It is flat, the combined efficiency of hole and electronics is increased, to not only improve the luminous power of high-power LED chip, but also reduces great power LED
The driving voltage of chip.
(3) the LED epitaxial growing method of the present invention for improving hole injection, only by LED extensions
Growth mixes Mg and does not mix the InGaN of Mg in layer:Mg/InGaN super lattice layer structures improve hollow in emitting diode epitaxial layer
The injection in cave and mobility, it is easy to operate, exploitativeness is strong.
Certainly, implementing any of the products of the present invention specific needs while must not reach all the above technique effect.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Description of the drawings
It is combined in the description and the attached drawing of a part for constitution instruction shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is the flow diagram of traditional LED structure epitaxial growth method；
Fig. 2 is the epitaxial structure for the LED being prepared by traditional LED structure epitaxial growth method；
Fig. 3 is an alternative embodiment of the LED epitaxial growing method of raising hole of the present invention injection
Flow diagram；
Fig. 4 is the LED structure schematic diagram being prepared using LED epitaxial growing method of the present invention；
Fig. 5 is that one of the LED epitaxial growing method of the raising hole injection described in the embodiment of the present invention 2 can
Select the flow diagram of embodiment；
Fig. 6 is the Luminance Distribution comparison diagram of sample 1 and sample 2 in the embodiment of the present invention 3；
Fig. 7 is the driving voltage comparison diagram of sample 1 and sample 2 in the embodiment of the present invention 3.
Specific implementation mode
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the present invention
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent attached drawing in a attached drawing.
Embodiment 1
As shown in figure 3, one for the LED epitaxial growing method of raising hole of the present invention injection can
Select the flow diagram of embodiment.The present invention is grown in LED epitaxial layers to mix Mg and does not mix the InGaN of Mg:Mg/InGaN is super brilliant
Compartment structure improves the hole Injection Level of quantum well region, reduces the operating voltage of light emitting diode (LED) and raising
The luminous efficiency of LED.The LED epitaxial growing method of raising hole injection described in the present embodiment includes following
Step：
Step 301, temperature be 1050-1150 DEG C under conditions of, by Sapphire Substrate purity be 99.999% or more
Hydrogen atmosphere in annealed after, clean substrate surface.
Step 302 reduces the temperature to 500-620 DEG C, is passed through TMGa and purity as 99.999% or more NH3, growth thickness
Degree is the low temperature GaN nucleating layers of 20-40nm.
Step 303, stopping are passed through TMGa, raise the temperature to 1000-1100 DEG C and carry out in-situ annealing processing 5-10min；
The temperature was then adjusted to 900-1050 DEG C after in-situ annealing, epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um.
Wherein, the low temperature GaN nucleating layers and high temperature GaN buffer layers constitute the GaN buffer layers of LED.
Step 304 is passed through NH3 and TMGa, and growth thickness is the undoped u-GaN layers of the high temperature of 1-3um.
Step 305 is passed through NH3, TMGa and SiH4, grow the n-GaN layers that doping concentration is stable and thickness is 2-4um.
Step 306, using TMIn, TEGa be the sources MO, SiH4Multicycle Quantum Well MQW luminescent layer is grown for N type dopant.
Step 307 uses TMIn, TMGa and CP2Mg be the sources MO, growth temperature be 700-900 DEG C, pressure 100-
500Torr, the molar constituent that the molar constituent that V/III molar ratio is 300-5000, Mg is 0.3%-1%, In are 1-10%'s
Under the conditions of, growth thickness is that mixing for 20-120nm and does not mix the InGaN of Mg at Mg:The superlattice layer of Mg/InGaN, wherein InGaN:
The superlattice layer thickness ratio of Mg/InGaN is 1:1-5:1, periodicity 4-50.
Step 308 uses TMGa and CP2Mg is the sources MO, and growth thickness is the p-type AlGaN layer of 50-200nm, wherein institute
State p-type AlGaN layer i.e. the electronic barrier layer of LED.
Step 309 uses TMGa and CP2Mg is the sources MO, and growth thickness is the high temperature p-type GaN layer of 100-800nm, wherein
Mg doping concentrations are 1017-1018cm-3。
Step 310 uses TMGa and CP2Mg is the sources MO, and growth thickness is the p-type GaN contact layers of 5-20nm.
Step 311 terminates life after carrying out annealing 5-10min in the nitrogen atmosphere that purity is 99.999% or more
Long, single light-emitting diodes tube core is made in obtained light emitting diode epitaxial structure after over cleaning, deposition, lithography and etching
Piece.
The raw materials of compound used in the present embodiment includes：Metal organic source trimethyl gallium (TMGa), metal organic source
Triethyl-gallium (TEGa), trimethyl indium (TMIn) are silane as silicon source, N type dopant as indium source, trimethyl aluminium (TMAl)
(SiH4), P-type dopant is two luxuriant magnesium (CP2Mg), substrate is sapphire.
In conjunction with shown in Fig. 4, Fig. 4 is to be prepared using the LED epitaxial growing method described in the present embodiment
LED structure schematic diagram.In Fig. 4,401 be sapphire substrate, 402 be GaN buffer layers, 403 be u-GaN layers, 404 be n-GaN
Layer, 405 be Quantum Well multicycle Quantum Well MQW luminescent layer, 406 be InGaN:Mg/InGaN superlattice layers, 407 are p-type AlGaN
Layer, 408 be the p-type GaN layer of high temperature dopant Mg, 409 be p-type GaN contact layers.
In the technical field of LED, LED shines and is primarily due to electrons and holes recombination luminescence in MQW luminescent layers.Generally
For, mobility is higher, concentration is higher, and resistance value is lower, and electrons and holes are the same reason, so resistance value is low, it is natural
Operating voltage is with regard to low.Same reason, if concentration is certain, mobility is high, and natural resistance value is also low.Only enter MQW luminescent layers
In with the compound hole of electronics just calculate effective hole, the LED epitaxial layers that in the present embodiment prepared by method are because of hole mobility
It improves, increases into the number of cavities in MQW luminescent layers, compound chance increases with electronics, so that the LED prepared
Luminance raising, light efficiency is related with brightness and voltage, directly proportional to brightness, is inversely proportional with voltage, therefore, described in the present embodiment
The LED that method prepares improves luminous efficiency.
Embodiment 2
As shown in figure 5, for the LED epitaxial growing method for improving hole injection described in the embodiment of the present invention 2
Flow diagram.In the present embodiment, the specific method of each step is grown provided with realization LED epitaxial.This implementation
The LED epitaxial growing method of raising hole injection in example includes the following steps：
Step 501, temperature be 1050-1150 DEG C under conditions of, by Sapphire Substrate purity be 99.999% or more
Hydrogen atmosphere in annealed after, clean substrate surface.
Step 502 reduces the temperature to 500-620 DEG C, is passed through TMGa and purity as 99.999% or more NH3, growing
Under conditions of pressure is 400-650Torr, V/III molar ratio is 500-3000, the low temperature GaN nucleation of thickness 20-40nm thickness is grown
Layer.
Step 503, stopping are passed through TMGa, raise the temperature to 1000-1100 DEG C and carry out in-situ annealing processing 5-10min；
The temperature was then adjusted to 900-1050 DEG C after in-situ annealing, continue to be passed through TMGa, pressure be 400-650Torr, V/III mole
Under conditions of for 500-3000, epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um.
Step 504 is passed through NH3 and TMGa, growth temperature be 1050-1200 DEG C, growth pressure 100-500Torr,
Under conditions of V/III molar ratio is 300-3000, growth thickness is the undoped u-GaN layers of the high temperature of 1-3um.
Step 505 is passed through NH3, TMGa and SiH4, growth temperature be 1050-1200 DEG C, growth pressure 100-
600Torr, V/III molar ratio are that 300-3000, Si doping concentration are 8*1018-2*1019cm-3Under conditions of, growth thickness is
The n-GaN layers of 2-4um.
Step 506, using TMIn, TEGa be the sources MO, SiH4It is 700-800 DEG C in growth temperature for N type dopant, it is raw
Under conditions of long pressure is 100-500Torr, V/III molar ratio is 300-5000, growth thickness is the Quantum Well of 2-5nm
InyGa1-yN layers, wherein y=0.1-0.3.
Preferably, the Quantum Well InyGa1-yIn N layers, y=0.2-0.22.
Step 507, growth temperature is 800-950 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-
Under conditions of 5000, growth thickness is the barrier layer GaN of 8-15nm, and carries out Si groups to the barrier layer GaN and be divided into 0.5%-3%'s
Low concentration Si doping.
Wherein, by the In in 5-15 periodyGa1-yMulticycle Quantum Well MQW described in N/GaN Quantum Well/barrier layer structure composition
Luminescent layer.
Step 508 uses TMIn, TMGa and CP2Mg be the sources MO, growth temperature be 700-900 DEG C, pressure 100-
500Torr, the molar constituent that the molar constituent that V/III molar ratio is 300-5000, Mg is 0.3%-1%, In are 1-10%'s
Under the conditions of, growth thickness is that mixing for 20-120nm and does not mix the InGaN of Mg at Mg:The superlattice layer of Mg/InGaN, wherein InGaN:
The superlattice layer thickness ratio of Mg/InGaN is 1:1-5:1, periodicity 4-50.
Step 509 uses TMGa and CP2Mg is the sources MO, growth temperature is 900-1100 DEG C, pressure is in 20-
Under conditions of 200Torr, V/III molar ratio are 1000-20000, growth time is 3-10min, growth thickness 50-200nm
P-type AlGaN layer, wherein the molar constituent of the Al of the p-type AlGaN layer is 10%-30%, and the molar constituent of Mg is
0.05%-0.3%.
Step 510 uses TMGa and CP2Mg be the sources MO, growth temperature be 850-1000 DEG C, growth pressure 100-
Under conditions of 500Torr, V/III molar ratio are 300-5000, growth thickness is the high temperature p-type GaN layer of 100-800nm, wherein
Mg doping concentrations are 1017-1018cm-3；
Step 511 uses TMGa and CP2Mg be the sources MO, growth temperature be 850-1050 DEG C, growth pressure 100-
Under conditions of 500Torr, V/III molar ratio are 1000-5000, growth thickness is the p-type GaN contact layers of 5-20nm.
Reaction temperature is down to 650-800 DEG C by step 512, is carried out in the nitrogen atmosphere that purity is 99.999% or more
After making annealing treatment 5-10min, it is down to room temperature and terminates to grow, obtained light emitting diode epitaxial structure is through over cleaning, deposition, light
It carves and single light-emitting diode chip for backlight unit is made after etching.
The LED being prepared through this embodiment Mg and does not mix the InGaN of Mg by growing to mix in LED epitaxial layers:
Mg/InGaN super lattice layer structures improve the hole Injection Level of quantum well region, increase the compound effect of hole and electronics
Rate to not only improve the luminous power of high-power LED chip, but also reduces the driving voltage of high-power LED chip.
Embodiment 3
In the present embodiment, the LED prepared respectively using conventional method the and LED that is prepared using the present invention program into
Row brightness and driving voltage contrast test.It is specific as follows：
Sample 1 is prepared according to the growing method of traditional LED, sample 2 is prepared according to the method that this patent describes；Sample 1
It is with 2 epitaxial growth method parameter difference of sample：Sample 2 is given birth to after having grown MQW luminescent layers further through the method for the present invention
One layer of InGaN for mixing Mg and not mixing Mg is grown:Mg/InGaN super lattice layer structures, sample 1 and sample 2 in details reference table 1,
Plating thickness is ITO (tin indium oxide is commonly called as ITO) layer of 150nm, plates under the same conditions under identical preceding process conditions
The Cr/Pt/Au electrodes of 70nm and SiO is plated under the same conditions2Protective layer 30nm, then under the same conditions grinds sample
Mill cuts into the chip particle of 762 μm * 762 μm (30mi*30mil), and sample 1 and sample 2 respectively select 150 in same position
Crystal grain is packaged into white light LEDs under identical packaging technology.Finally use integrating sphere under conditions of driving current is 350mA
The photoelectric properties of test sample 1 and sample 2.The growth parameter(s) contrast table of sample 1 and sample 2 is as follows：
The growth parameter(s) contrast table of table 1, sample 1 and sample 2
1 explanation of table：Sample 1 is directly to grow electronic barrier layer (p after growing multiple quantum wells barrier layer by conventional growth mode
Type AlGaN layer)；2 LED outer layer growths mode using the present invention of sample, between multiple quantum wells barrier layer and electronic barrier layer
It is inserted into the InGaN that one layer of period is 20:Mg/InGaN superlattice layers.
It is as shown in Figure 6 and Figure 7 by the brightness and driving voltage comparing result of the sample 1 and sample 2 of this experiment acquisition.
Wherein, Fig. 6 is the Luminance Distribution comparison diagram of sample 1 and sample 2 in the present embodiment；Fig. 7 is sample 1 and sample 2 in the present embodiment
Driving voltage comparison diagram.From test result figure this it appears that：Compared with the existing technology using the LED of the invention prepared
LED prepared by method reduces operating voltage, improves luminous efficiency.
By above each embodiment it is found that the LED epitaxial growing method of the raising hole injection of the present invention is deposited
Advantageous effect be：
(1) the LED epitaxial growing method of the present invention for improving hole injection is grown in multiple quantum well layer
After complete, one layer of InGaN for mixing Mg and not mixing Mg is grown:Mg/InGaN super lattice layer structures not only provide hole concentration, but also logical
The growth raising holoe carrier for crossing superlattices is extending transversely under superlattices effect, has being uniformly distributed using hole, carries
High hole diffusion length and hole mobility reduce the work electricity of LED to improve the hole Injection Level of quantum well region
Pressure, the luminous efficiency for improving LED.
(2) the LED epitaxial growing method of the present invention for improving hole injection, by LED epitaxial layers
Growth mixes Mg and does not mix the InGaN of Mg:Water is injected in Mg/InGaN super lattice layer structures, the hole to improve quantum well region
It is flat, the combined efficiency of hole and electronics is increased, to not only improve the luminous power of high-power LED chip, but also reduces great power LED
The driving voltage of chip.
(3) the LED epitaxial growing method of the present invention for improving hole injection, only by LED extensions
Growth mixes Mg and does not mix the InGaN of Mg in layer:Mg/InGaN super lattice layer structures improve hollow in emitting diode epitaxial layer
The injection in cave and mobility, it is easy to operate, exploitativeness is strong.
It should be understood by those skilled in the art that, the embodiment of the present invention can be provided as method, apparatus or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, the present invention can be used in one or more wherein include computer usable program code computer
The computer program production implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
Although some specific embodiments of the present invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to illustrating, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above example.This hair
Bright range is defined by the following claims.
Claims (10)
1. a kind of LED epitaxial growing method improving hole injection, which is characterized in that including：
Under conditions of temperature is 1050-1150 DEG C, by Sapphire Substrate in purity in 99.999% or more hydrogen atmosphere
After being annealed, substrate surface is cleaned；
500-620 DEG C is reduced the temperature to, is passed through TMGa and purity as 99.999% or more NH3, growth thickness is 20-40nm's
Low temperature GaN nucleating layers；
Stopping is passed through TMGa, raises the temperature to 1000-1100 DEG C and carries out in-situ annealing processing 5-10min；After in-situ annealing
The temperature was then adjusted to 900-1050 DEG C, epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um；
It is passed through NH3 and TMGa, growth thickness is the undoped u-GaN layers of the high temperature of 1-3um, and growth temperature is 1050-1200 DEG C；
It is passed through NH3, TMGa and SiH4, grow the n-GaN layers that Si doping concentrations are stable and thickness is 2-4um；
The use of TMIn, TEGa is the sources MO, SiH4Multicycle Quantum Well MQW luminescent layer is grown for N type dopant；
Use TMIn, TMGa and CP2Mg is the sources MO, is 700-900 DEG C, pressure 100-500Torr, V/III rubs in growth temperature
You than be 300-5000, Mg molar constituent be 0.3%-1%, In molar constituent be 1-10% under conditions of, growth thickness
For mixing for 20-120nm Mg and the InGaN of Mg is not mixed:The superlattice layer of Mg/InGaN, wherein InGaN:The super crystalline substance of Mg/InGaN
Compartment thickness ratio is 1:1-5:1, periodicity 4-50；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the p-type AlGaN layer of 50-200nm；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the high temperature p-type GaN layer of 100-800nm, wherein Mg doping concentrations are
1017-1018cm-3, growth temperature is 850-1000 DEG C；
Use TMGa and CP2Mg is the sources MO, and growth thickness is the p-type GaN contact layers of 5-20nm；
Terminate growth after carrying out annealing 5-10min in the nitrogen atmosphere that purity is 99.999% or more；
Single light-emitting diodes tube core is made in obtained light emitting diode epitaxial structure after over cleaning, deposition, lithography and etching
Piece.
2. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Growth thickness is 20-40nm low temperature GaN nucleating layers, including：
Under conditions of growth pressure is 400-650Torr, V/III molar ratio is 500-3000, growth thickness is 20-40nm's
Low temperature GaN nucleating layers.
3. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Epitaxial growth thickness is the high temperature GaN buffer layers of 0.2-1um, including：
Continue to be passed through TMGa, under conditions of pressure is 400-650Torr, V/III molar ratio is 500-3000, epitaxial growth is thick
Degree is the high temperature GaN buffer layers of 0.2-1um.
4. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Growth thickness is the undoped u-GaN layers of the high temperature of 1-3um, including：
In the condition that growth temperature is 1050-1200 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-3000
Under, growth thickness is the undoped u-GaN layers of the high temperature of 1-3um.
5. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
The n-GaN layers that doping concentration is stable and thickness is 2-4um are grown, including：
Growth temperature is 1050-1200 DEG C, growth pressure 100-600Torr, V/III molar ratio are that 300-3000, Si mix
Miscellaneous a concentration of 8*1018-2*1019cm-3Under conditions of, growth thickness is the n-GaN layers of 2-4um.
6. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Multicycle Quantum Well MQW luminescent layer is grown, including：
The multicycle Quantum Well MQW luminescent layers by 5-15 period InyGa1-yN/GaN Quantum Well/barrier layer structure composition, y=
0.1-0.3；Wherein,
It is 700-800 DEG C in growth temperature, the condition that growth pressure 100-500Torr, V/III molar ratio are 300-5000
Under, growth thickness is the Quantum Well In of 2-5nmyGa1-yN layers；
In the condition that growth temperature is 800-950 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-5000
Under, growth thickness is the barrier layer GaN of 8-15nm, and the low concentration Si for being divided into 0.5%-3% to barrier layer GaN progress Si groups mixes
It is miscellaneous.
7. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Growth thickness is the p-type AlGaN layer of 50-200nm, including：
Growth temperature be 900-1100 DEG C, pressure in 20-200Torr, V/III molar ratio be 1000-20000, growth time
Under conditions of 3-10min, growth thickness is the p-type AlGaN layer of 50-200nm, wherein the Al's of the p-type AlGaN layer rubs
Your group is divided into 10%-30%, and the molar constituent of Mg is 0.05%-0.3%.
8. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Growth thickness is the high temperature p-type GaN layer of 100-800nm, including：
In the condition that growth temperature is 850-1000 DEG C, growth pressure 100-500Torr, V/III molar ratio are 300-5000
Under, growth thickness is the high temperature p-type GaN layer of 100-800nm.
9. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that described
Growth thickness is the p-type GaN contact layers of 5-20nm, including：
In the condition that growth temperature is 850-1050 DEG C, growth pressure 100-500Torr, V/III molar ratio are 1000-5000
Under, growth thickness is the p-type GaN contact layers of 5-20nm.
10. the LED epitaxial growing method according to claim 1 for improving hole injection, which is characterized in that institute
It states and terminates growth after carrying out annealing 5-10min in the nitrogen atmosphere that purity is 99.999% or more, including：
Reaction temperature is down to 650-800 DEG C, annealing 5- is carried out in the nitrogen atmosphere that purity is 99.999% or more
After 10min, it is down to room temperature and terminates to grow.
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