GB201700942D0 - Epitaxial structure for improving efficiency drop of GaN-BASED LED - Google Patents

Epitaxial structure for improving efficiency drop of GaN-BASED LED

Info

Publication number
GB201700942D0
GB201700942D0 GBGB1700942.4A GB201700942A GB201700942D0 GB 201700942 D0 GB201700942 D0 GB 201700942D0 GB 201700942 A GB201700942 A GB 201700942A GB 201700942 D0 GB201700942 D0 GB 201700942D0
Authority
GB
United Kingdom
Prior art keywords
gan
epitaxial structure
improving efficiency
based led
efficiency drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1700942.4A
Other versions
GB2543682A (en
GB2543682B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enraytek Optoelectronics Co Ltd
Original Assignee
Enraytek Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enraytek Optoelectronics Co Ltd filed Critical Enraytek Optoelectronics Co Ltd
Publication of GB201700942D0 publication Critical patent/GB201700942D0/en
Publication of GB2543682A publication Critical patent/GB2543682A/en
Application granted granted Critical
Publication of GB2543682B publication Critical patent/GB2543682B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
GB1700942.4A 2014-07-24 2015-07-20 Epitaxial structure for improving efficiency drop of GaN-based LED Expired - Fee Related GB2543682B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410356966.9A CN104134732B (en) 2014-07-24 2014-07-24 It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines
PCT/CN2015/084486 WO2016011924A1 (en) 2014-07-24 2015-07-20 EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED

Publications (3)

Publication Number Publication Date
GB201700942D0 true GB201700942D0 (en) 2017-03-08
GB2543682A GB2543682A (en) 2017-04-26
GB2543682B GB2543682B (en) 2019-04-17

Family

ID=51807333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1700942.4A Expired - Fee Related GB2543682B (en) 2014-07-24 2015-07-20 Epitaxial structure for improving efficiency drop of GaN-based LED

Country Status (4)

Country Link
CN (1) CN104134732B (en)
DE (1) DE112015003419T5 (en)
GB (1) GB2543682B (en)
WO (1) WO2016011924A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134732B (en) * 2014-07-24 2017-09-19 映瑞光电科技(上海)有限公司 It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines
CN104638082B (en) * 2015-02-04 2017-10-13 映瑞光电科技(上海)有限公司 The preparation method of low-voltage GaN base LED epitaxial structures
CN105405939B (en) * 2015-12-02 2018-01-12 华灿光电(苏州）有限公司 A kind of light emitting diode and its manufacture method
CN105514235A (en) * 2015-12-25 2016-04-20 扬州德豪润达光电有限公司 Multiple-quantum well structure for optoelectronic device
CN105789391B (en) * 2016-04-28 2018-06-26 聚灿光电科技（宿迁）有限公司 GaN base LED epitaxial structure and its manufacturing method
CN105870269B (en) * 2016-05-26 2018-08-28 湘能华磊光电股份有限公司 Improve the LED epitaxial growing method of hole injection
CN105932118B (en) * 2016-06-13 2018-01-30 湘能华磊光电股份有限公司 Improve the LED epitaxial growth methods of hole injection
CN106299052B (en) * 2016-09-22 2018-11-27 绍兴市上虞宜美照明电器有限公司 A kind of GaN epitaxial structure and preparation method for LED
CN107204391B (en) * 2017-05-24 2018-12-28 湘能华磊光电股份有限公司 A kind of LED epitaxial growth method
CN107146836A (en) * 2017-05-26 2017-09-08 华南理工大学 GaN base green light LED epitaxial structure with gradual change In component p-type InGaN conductive layers and preparation method thereof
CN110098293B (en) * 2019-04-26 2021-03-19 中国电子科技集团公司第三十八研究所 LED structure with heteroepitaxy NIP junction type multi-quantum well light-emitting layer terminal
CN110783432B (en) * 2019-11-04 2022-02-22 马鞍山杰生半导体有限公司 Ultraviolet LED epitaxial wafer and preparation method thereof
CN111710762B (en) * 2020-06-28 2021-10-15 中国科学院半导体研究所 Group III nitride optoelectronic devices with p-type polarization doping
CN112436079A (en) * 2020-10-31 2021-03-02 扬州大学 GaN-based LED epitaxial structure of inverted triangular potential barrier and growth method thereof
CN112467004B (en) * 2020-10-31 2022-06-07 扬州大学 GaN-based LED epitaxial structure containing electronic storage layer and growth method thereof
CN114038956A (en) * 2021-03-16 2022-02-11 重庆康佳光电技术研究院有限公司 Light emitting chip and epitaxial structure thereof
CN113410345B (en) * 2021-06-15 2022-08-26 厦门士兰明镓化合物半导体有限公司 Ultraviolet semiconductor light emitting element
CN115224171B (en) * 2022-09-20 2022-11-29 江西兆驰半导体有限公司 High-light-efficiency light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN115347097B (en) * 2022-10-18 2023-03-14 江西兆驰半导体有限公司 Light emitting diode epitaxial wafer and preparation method thereof
CN117410413B (en) * 2023-12-14 2024-03-08 江西兆驰半导体有限公司 LED epitaxial wafer and preparation method thereof
CN117810325B (en) * 2024-02-29 2024-05-28 江西兆驰半导体有限公司 High-light-efficiency light-emitting diode epitaxial wafer and preparation method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3722426B2 (en) * 1994-09-19 2005-11-30 株式会社東芝 Compound semiconductor device
US7326963B2 (en) * 2004-12-06 2008-02-05 Sensor Electronic Technology, Inc. Nitride-based light emitting heterostructure
CN101359710B (en) * 2008-09-25 2011-12-28 上海蓝光科技有限公司 Manufacturing method of green light LED
KR101018088B1 (en) * 2008-11-07 2011-02-25 삼성엘이디 주식회사 Nitride Semiconductor Device
JP4769905B2 (en) * 2009-12-10 2011-09-07 Ｄｏｗａエレクトロニクス株式会社 Method for producing p-type AlGaN layer and group III nitride semiconductor light emitting device
CN102185054A (en) * 2011-04-02 2011-09-14 映瑞光电科技(上海)有限公司 Light-emitting diode (LED) and manufacturing method thereof
CN102157646A (en) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 Nitride LED structure and preparation method thereof
US20140077153A1 (en) * 2012-09-14 2014-03-20 Tsmc Solid State Lighting Ltd. Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate
CN102969416A (en) * 2012-11-01 2013-03-13 扬州中科半导体照明有限公司 Nitride light-emitting diode (LED) epitaxial wafer and growing method thereof
CN104134732B (en) * 2014-07-24 2017-09-19 映瑞光电科技(上海)有限公司 It is a kind of to improve the epitaxial structure that GaN base LED efficiency declines

Also Published As

Publication number Publication date
CN104134732B (en) 2017-09-19
WO2016011924A1 (en) 2016-01-28
GB2543682A (en) 2017-04-26
CN104134732A (en) 2014-11-05
DE112015003419T5 (en) 2017-05-11
GB2543682B (en) 2019-04-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20200720