CN110098293B - LED structure with heteroepitaxy NIP junction type multi-quantum well light-emitting layer terminal - Google Patents
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- 238000001534 heteroepitaxy Methods 0.000 title claims description 4
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 26
- 238000005036 potential barrier Methods 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000010287 polarization Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses an LED structure with a heteroepitaxial NIP junction type multi-quantum well light-emitting layer terminal, which belongs to the technical field of semiconductor optoelectronic devices and comprises a substrate, a GaN buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well light-emitting layer, an electronic barrier layer and a P-type GaN layer, wherein the GaN buffer layer, the undoped GaN layer, the N-type GaN layer, the multi-quantum well light-emitting layer, the electronic barrier layer and the P-type GaN layer are sequentially grown on the substrate, the multi-quantum well light-emitting layer comprises a plurality of quantum well layers, the terminal barrier layer of the topmost quantum well layer is an N-I-P junction type heteroepitaxial structure, and the N-I-P junction type heteroepitaxial structure sequentially comprises an N-type GaN layer and an I-xGa1‑xThe N layer and the P type GaN layer, wherein x is more than or equal to 0 and less than or equal to 0.8. The invention can effectively block electron leakage, improve the injection efficiency of holes, increase the radiative recombination of electrons and holes, and improve the internal quantum efficiency and the light output power of the LED.
Description
Technical Field
The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an LED structure with a heteroepitaxy NIP junction type multi-quantum well light-emitting layer terminal.
Background
The light emitting diode LED has the advantages of high photoelectric conversion efficiency, long service life, easiness in integration, low driving voltage and the like, and is widely applied to various fields of illumination, display screens, indication signals and the like. The lighting electricity consumption of developed countries accounts for 20% of the total power generation, the power consumption of developed countries accounts for 10-15%, and the power consumption of underdeveloped countries and regions accounts for 5%, so that the light source has the potential of replacing incandescent lamps to become a new generation lighting source.
For the GaN-based bandgap semiconductor material, the luminescent spectrum covers the whole band from deep ultraviolet to mid-infrared, which makes the GaN material have greater development potential and wider application space than other semiconductor materials in the field of illumination.
Although the GaN-based LED is currently produced in a large-scale industrial manner, the problem of low luminous efficiency still exists because the GaN-based material has a spontaneous polarization effect and a piezoelectric polarization effect, a polarization electric field generated by the polarization effect causes the energy band of the multiple quantum well structure to deform, and further generates a quantum confinement stark effect, and as the driving current increases, the internal leakage current of the device becomes serious, and the internal quantum efficiency is reduced.
The conventional LED epitaxial structure adopts a common multiple quantum well light-emitting layer, and due to the existence of heterojunction and polarization, an electron blocking layer has a higher valence band hole barrier, so that the injection efficiency of holes is reduced, and the quantum efficiency and the light output efficiency in the LED are reduced.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to improve the internal quantum efficiency and the light output power of the LED, an LED structure with a heteroepitaxial NIP junction type multi-quantum well light-emitting layer terminal is provided.
The invention solves the technical problems by the following technical scheme that the GaN-based light emitting diode comprises a substrate, a GaN buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well light emitting layer, an electronic barrier layer and a P-type GaN layer, wherein the GaN buffer layer, the undoped GaN layer, the N-type GaN layer, the multi-quantum well light emitting layer, the electronic barrier layer and the P-type GaN layer are sequentially grown on the substrate, the multi-quantum well light emitting layer comprises a plurality of quantum well layers, a terminal barrier layer of the uppermost quantum well layer is of an N-I-P junction type hetero-epitaxial structure, and the N-I-P junction type hetero-epitaxial structure sequentially comprises an N-type GaN layer, an I-type Al-PxGa1-xThe N-type GaN layer is a first potential well layer; the type I AlxGa1-xN layer is a barrier layer, and the I type AlxGa1-xThe N layer is arranged at the upper end of the N-type GaN layer, the P-type GaN layer is a second potential well layer, and the P-type GaN is arranged at the I-type Al layerxGa1-xThe upper end of the N layer.
Preferably, the quantum well layer includes InGaN potential wells and GaN barriers, the InGaN potential wells and the GaN barriers are alternately arranged, the InGaN potential wells and the GaN barriers form a cycle pair, the multiple quantum well light emitting layer includes multiple cycle pairs, and the GaN barriers are located at the upper ends of the InGaN potential wells in the same cycle pair.
Preferably, the In component In the structure of the multi-quantum well light-emitting layer is 15% -20%, the thickness of the InGaN potential well is 1-3 nm, and the thickness of the GaN potential barrier is 10-16 nm.
Preferably, the N-type GaN layer and the I-type Al layerxGa1-xThe N layer and the P-type GaN layer form a junction type heterostructure of potential barrier-potential well-potential barrier, and the I-type Al layerxGa1-xThe N layer is intrinsic AlxGa1-xN material, N-type GaN layer, I-type AlxGa1-xThe thicknesses of the N layer and the P type GaN layer are both less than 13nm, wherein x is more than or equal to 0 and less than or equal to 0.8.
Preferably, the electron blocking layer is p-type AlyGa1-yAnd the material N, wherein y is more than or equal to 0.1 and less than or equal to 0.8, and the thickness of the electron blocking layer is 20 nm.
Preferably, the substrate is a sapphire nano patterned substrate material, and the thickness of the substrate is 100 μm.
Preferably, the GaN buffer layer is made of low-temperature epitaxial intrinsic GaN materials, and the thickness of the GaN buffer layer is 20-40 nm.
Preferably, the undoped GaN layer is an undoped intrinsic GaN material, and the thickness of the undoped GaN layer is 0.4-1.0 um.
Preferably, the n-type GaN layer is made of n-type GaN materials, and the thickness of the n-type GaN layer is 2-3 um.
Preferably, the p-type GaN layer is made of p-type GaN materials, and the thickness of the p-type GaN layer is 150-300 nm.
Compared with the prior art, the invention has the following advantages: according to the LED structure with the NIP junction type multi-quantum well light-emitting layer terminal, the last quantum well barrier layer of the multi-quantum well light-emitting layer terminal is an N-I-P junction type hetero-epitaxial structure, the height of a hole barrier of a valence band of an electron barrier layer is reduced by adjusting the energy band structure of the quantum well barrier layer, and the problem of low hole injection efficiency caused by polarization is solved; meanwhile, the height of the barrier of the electron blocking layer is further improved, and the electron blocking efficiency is improved; the heterojunction type potential barrier structure of the heterojunction can form a polarization electric field and a junction electric field which are beneficial along the epitaxial direction, can offset the harmful polarization effect caused by introducing the electron blocking layer, and improves the injection efficiency of holes.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a graph comparing the power of light emitted from the present invention with that of a conventional structure;
FIG. 3 is a graph comparing the luminous intensity of the present invention with that of a conventional structure;
FIG. 4 is a band diagram of the present invention;
fig. 5 is a band diagram of a conventional structure.
In the figure: 1. a substrate; 2. a GaN buffer layer; 3. an undoped GaN layer; 4. an n-type GaN layer; 5. a multiple quantum well light emitting layer; 51. an N-type GaN layer; 52. type I AlxGa1-xN layers; 53. a P-type GaN layer; 6. an electron blocking layer; 7. and a p-type GaN layer.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
As shown in fig. 1, the present embodiment provides a technical solution: the LED structure with the NIP junction type multi-quantum well light-emitting layer terminal comprises a substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multi-quantum well light-emitting layer 5, an electronic barrier layer 6 and a P-type GaN layer 7, wherein the GaN buffer layer 2, the undoped GaN layer 3, the N-type GaN layer 4, the multi-quantum well light-emitting layer 5, the electronic barrier layer 6 and the P-type GaN layer 7 are sequentially grown on the substrate 1, the multi-quantum well light-emitting layer 5 comprises a plurality of quantum well layers, the barrier layer of the quantum well layer terminal at the top is an N-I-P junction type hetero-epitaxial structure, and the N-I-P junction type hetero-epitaxial structure sequentially comprises an N-type GaN layer 51 and an I-type Al-xGa1-xThe N layer 52 and the P-type GaN layer 53, wherein x is more than or equal to 0 and less than or equal to 0.8.
The multiple quantum well light emitting layer 5 comprises InGaN potential wells and GaN potential barriers, the InGaN potential wells and the GaN potential barriers are alternately arranged, the InGaN potential wells and the GaN potential barriers form a period pair, the GaN potential barriers are located at the upper ends of the InGaN potential wells in the same period pair, and the multiple quantum well light emitting layer 5 comprises six period pairs.
The In component In the structure of the multi-quantum well light-emitting layer 5 is 15% -20%, the thickness of the InGaN potential well is 2nm, and the thickness of the GaN potential barrier is 13 nm.
The N-type GaN layer 51 is a first well layer, and the doping concentration of the N-type GaN layer 51 is 1 × 1018The thickness is 4 nm; the type I AlxGa1-xThe N layer 52 is a barrier layer, the I type AlxGa1-xAn N layer 52 is positioned on the upper end of the N-type GaN layer 51, and the I-type AlxGa1-xThe N layer 52 is intrinsic AlxGa1-xAn N material with a thickness of 5nm, wherein x is 0.05; the P-type GaN layer 53 is a second potential well layer with a doping concentration of 5 × 1018cm-3The thickness is 4nm, and the P-type GaN layer 53 is positioned on the I-type AlxGa1-xThe upper end of the N layer 52; the electron barrier layer 6 is p-type AlyGa1-yN material with thickness of 20nm, y 0.15 and doping concentration of 3X 1017cm-3。
The substrate 1 is a sapphire nano patterned substrate material, and the thickness of the substrate 1 is 100 micrometers; the GaN buffer layer 2 is made of low-temperature epitaxial intrinsic GaN material and has the thickness of 30 nanometers; the undoped GaN layer 3 is an undoped intrinsic GaN material and is 0.5um thick; the n-type GaN layer 4 is made of n-type GaN material, has a thickness of 2um and a doping concentration of 5 × 1018cm-3(ii) a The p-type GaN layer 7 is made of p-type GaN material, has a thickness of 200nm and a doping concentration of 3 × 1017cm-3。
As shown in fig. 2, the light output power of the present invention is compared with the conventional structure, and it can be seen that the present invention can effectively improve the light emitting efficiency compared with the conventional structure.
As shown in fig. 3, which is a graph comparing the luminous intensity of the present invention with that of the conventional structure, it can be seen that the present invention has higher luminous intensity at both 4V and 5V bias compared to the conventional structure.
As shown in fig. 4 and 5, which are energy band distribution diagrams of the present invention and the conventional structure, respectively, it can be seen that the root cause of the present invention for improving the light emitting efficiency of the LED is that the present invention effectively improves the height of the conduction band barrier and reduces the height of the valence band barrier, thereby improving the efficiency of injecting holes from the P region while increasing the suppression of electron leakage.
In summary, in the LED structure with the heteroepitaxial NIP multi-quantum well light-emitting layer terminal of the embodiment, the last quantum well terminal barrier layer of the multi-quantum well light-emitting layer 5 is an N-I-P junction heteroepitaxial structure, and the height of the valence band hole barrier of the electron barrier layer is reduced by adjusting the band structure of the layer, so as to solve the problem of low hole injection efficiency caused by polarization; meanwhile, the height of the barrier of the electron blocking layer is further improved, and the electron blocking efficiency is improved; the heterojunction type potential barrier structure of the heterojunction can form a polarization electric field and a junction electric field which are beneficial along the epitaxial direction, can offset the harmful polarization effect caused by introducing the electron blocking layer, and improves the injection efficiency of holes.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. LED structure with heteroepitaxy NIP junction type multi-quantum well luminescent layer terminal, its characterized in that: the GaN-based light-emitting diode comprises a substrate (1), a GaN buffer layer (2), an undoped GaN layer (3), an N-type GaN layer (4), a multiple quantum well light-emitting layer (5), an electronic barrier layer (6) and a P-type GaN layer (7), wherein the GaN buffer layer (2), the undoped GaN layer (3), the N-type GaN layer (4), the multiple quantum well light-emitting layer (5), the electronic barrier layer (6) and the P-type GaN layer (7) grow on the substrate (1) in sequence, the multiple quantum well light-emitting layer (5) comprises a plurality of quantum well layers, the uppermost terminal barrier layer of each quantum well layer is an N-I-P junction type heterogeneous epitaxial structure, and the N-I-P junction type heterogeneous epitaxial structure sequentially comprises an N-type GaN layer (51), an I-type Al layer (51) and the uppermostxGa1-xAn N layer (52) and a P-type GaN layer (53), the N-type GaN layer (51) is a first potential well layer, the I-type Al layerxGa1-xThe N layer (52) is a barrier layer, the P-type GaN layer (53) is a second potential well layer, and the I-type Al layerxGa1-xN layer (52) bitThe P-type GaN layer (53) is arranged on the I-type Al layer at the upper end of the N-type GaN layer (51)xGa1-xThe upper end of the N layer (52).
2. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the quantum well layer comprises InGaN potential wells and GaN potential barriers, the InGaN potential wells and the GaN potential barriers are alternately arranged, the InGaN potential wells and the GaN potential barriers form a period pair, the multi-quantum well light emitting layer (5) comprises a plurality of period pairs, and the GaN potential barriers are located at the upper ends of the InGaN potential wells in the same period pair.
3. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 2, wherein: in the structure of the multi-quantum well light-emitting layer (5), the In component is 15% -20%, the thickness of the InGaN potential well is 1-3 nm, and the thickness of the GaN potential barrier is 10-16 nm.
4. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the N-type GaN layer (51), I-type AlxGa1-xThe N layer (52) and the P-type GaN layer (53) form a junction structure of potential well-potential barrier-potential well, and the I-type Al layerxGa1-xThe N layer is intrinsic AlxGa1-xN material, the N-type GaN layer (51), I-type AlxGa1-xThe thicknesses of the N layer (52) and the P-type GaN layer (53) are less than 13nm, wherein x is more than 0 and less than or equal to 0.8.
5. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the electron blocking layer (6) is p-type AlyGa1-yAnd the material N is a material, wherein y is more than or equal to 0.1 and less than or equal to 0.8, and the thickness of the electron blocking layer (6) is 20 nm.
6. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the substrate (1) is a sapphire nano patterned substrate material, and the thickness of the substrate (1) is 100 micrometers.
7. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the GaN buffer layer (2) is made of low-temperature epitaxial intrinsic GaN materials, and the thickness of the GaN buffer layer (2) is 20-40 nm.
8. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the undoped GaN layer (3) is an undoped intrinsic GaN material, and the thickness of the undoped GaN layer (3) is 0.2-0.8 um.
9. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the n-type GaN layer (4) is made of n-type GaN materials, and the thickness of the n-type GaN layer (4) is 2-3 um.
10. The LED structure with heteroepitaxial NIP multiple quantum well light emitting layer termination of claim 1, wherein: the p-type GaN layer (7) is made of p-type GaN materials, and the thickness of the p-type GaN layer (7) is 150-300 nm.
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| KR102053388B1 (en) * | 2013-06-11 | 2019-12-06 | 엘지이노텍 주식회사 | Light emitting device |
| KR102019858B1 (en) * | 2013-07-18 | 2019-09-09 | 엘지이노텍 주식회사 | Light emitting device and lighting system |
| CN107086258B (en) * | 2017-04-18 | 2019-05-14 | 安徽三安光电有限公司 | A kind of multi-quantum pit structure and its light emitting diode |
| CN107240627B (en) * | 2017-05-16 | 2019-06-21 | 东南大学 | A kind of UV LED with codope multi-quantum pit structure |
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