GB2286721A - Method for fabricating semiconductor device - Google Patents

Method for fabricating semiconductor device Download PDF

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Publication number
GB2286721A
GB2286721A GB9502863A GB9502863A GB2286721A GB 2286721 A GB2286721 A GB 2286721A GB 9502863 A GB9502863 A GB 9502863A GB 9502863 A GB9502863 A GB 9502863A GB 2286721 A GB2286721 A GB 2286721A
Authority
GB
United Kingdom
Prior art keywords
pattern
conductive pattern
conductive
plasma
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9502863A
Other languages
English (en)
Other versions
GB9502863D0 (en
Inventor
Hideaki Kawamoto
Hidenobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of GB9502863D0 publication Critical patent/GB9502863D0/en
Publication of GB2286721A publication Critical patent/GB2286721A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB9502863A 1994-02-15 1995-02-14 Method for fabricating semiconductor device Withdrawn GB2286721A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6018729A JP2861785B2 (ja) 1994-02-15 1994-02-15 半導体装置の配線の形成方法

Publications (2)

Publication Number Publication Date
GB9502863D0 GB9502863D0 (en) 1995-04-05
GB2286721A true GB2286721A (en) 1995-08-23

Family

ID=11979763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9502863A Withdrawn GB2286721A (en) 1994-02-15 1995-02-14 Method for fabricating semiconductor device

Country Status (2)

Country Link
JP (1) JP2861785B2 (ja)
GB (1) GB2286721A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987745A1 (en) * 1998-09-15 2000-03-22 Siemens Aktiengesellschaft Metallization etching method using a hard mask layer
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
WO2013174045A1 (zh) * 2012-05-25 2013-11-28 深圳市华星光电技术有限公司 取代膜层上氯原子的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291585B1 (ko) * 1997-07-25 2001-11-30 윤종용 반도체장치의금속막식각방법
JP2000138224A (ja) 1998-11-04 2000-05-16 Fujitsu Ltd 半導体装置の製造方法
JP4646346B2 (ja) * 2000-01-28 2011-03-09 パナソニック株式会社 電子デバイスの製造方法
JP5877658B2 (ja) * 2011-06-14 2016-03-08 ローム株式会社 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219485A (en) * 1985-10-11 1993-06-15 Applied Materials, Inc. Materials and methods for etching silicides, polycrystalline silicon and polycides

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
JPS6033367A (ja) * 1983-08-04 1985-02-20 Nec Corp アルミニウムのドライエッチング方法
US4809851A (en) * 1987-04-03 1989-03-07 World Container Corporation Collapsible container
JP2558738B2 (ja) * 1987-09-25 1996-11-27 株式会社東芝 表面処理方法
JPH02189919A (ja) * 1989-01-18 1990-07-25 Nec Corp ドライエッチング方法
JP3016261B2 (ja) * 1991-02-14 2000-03-06 ソニー株式会社 半導体装置の製造方法
JPH0547721A (ja) * 1991-08-20 1993-02-26 Sony Corp エツチング方法
JPH05102142A (ja) * 1991-10-04 1993-04-23 Sony Corp アルミニウム系金属パターンの形成方法
JPH05160084A (ja) * 1991-12-11 1993-06-25 Fujitsu Ltd 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219485A (en) * 1985-10-11 1993-06-15 Applied Materials, Inc. Materials and methods for etching silicides, polycrystalline silicon and polycides

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987745A1 (en) * 1998-09-15 2000-03-22 Siemens Aktiengesellschaft Metallization etching method using a hard mask layer
US6177353B1 (en) 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
KR100676995B1 (ko) * 1998-09-15 2007-01-31 지멘스 악티엔게젤샤프트 금속 라인들의 사후 에칭 부식을 감소시키기 위한 금속배선 에칭 기술
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
WO2013174045A1 (zh) * 2012-05-25 2013-11-28 深圳市华星光电技术有限公司 取代膜层上氯原子的方法

Also Published As

Publication number Publication date
JPH07230993A (ja) 1995-08-29
GB9502863D0 (en) 1995-04-05
JP2861785B2 (ja) 1999-02-24

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)