GB2150754B - Semiconductor device electrodes - Google Patents
Semiconductor device electrodesInfo
- Publication number
- GB2150754B GB2150754B GB8430310A GB8430310A GB2150754B GB 2150754 B GB2150754 B GB 2150754B GB 8430310 A GB8430310 A GB 8430310A GB 8430310 A GB8430310 A GB 8430310A GB 2150754 B GB2150754 B GB 2150754B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- device electrodes
- solderable
- strips
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58228043A JPS60119777A (ja) | 1983-11-30 | 1983-11-30 | ゲ−トタ−ンオフサイリスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8430310D0 GB8430310D0 (en) | 1985-01-09 |
GB2150754A GB2150754A (en) | 1985-07-03 |
GB2150754B true GB2150754B (en) | 1987-08-26 |
Family
ID=16870300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8430310A Expired GB2150754B (en) | 1983-11-30 | 1984-11-30 | Semiconductor device electrodes |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS60119777A (de) |
DE (2) | DE3448379C2 (de) |
GB (1) | GB2150754B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4073876B2 (ja) * | 2004-01-14 | 2008-04-09 | 三菱電機株式会社 | 半導体装置 |
JP5396436B2 (ja) * | 2011-06-29 | 2014-01-22 | 日立オートモティブシステムズ株式会社 | 半導体装置ならびに半導体装置の製造方法 |
US9583425B2 (en) * | 2012-02-15 | 2017-02-28 | Maxim Integrated Products, Inc. | Solder fatigue arrest for wafer level package |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1105526B (de) * | 1959-12-29 | 1961-04-27 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1214978B (de) * | 1963-06-11 | 1966-04-21 | Licentia Gmbh | Verfahren zum Anloeten einer Goldfolie an eine vernickelte Molybdaenscheibe |
DE1283970B (de) * | 1966-03-19 | 1968-11-28 | Siemens Ag | Metallischer Kontakt an einem Halbleiterbauelement |
GB1149606A (en) * | 1967-02-27 | 1969-04-23 | Motorola Inc | Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses |
GB1196834A (en) * | 1967-03-29 | 1970-07-01 | Hitachi Ltd | Improvement of Electrode Structure in a Semiconductor Device. |
GB1196576A (en) * | 1968-03-06 | 1970-07-01 | Westinghouse Electric Corp | High Current Gate Controlled Switches |
US3599060A (en) * | 1968-11-25 | 1971-08-10 | Gen Electric | A multilayer metal contact for semiconductor device |
GB1256815A (de) | 1969-03-04 | 1971-12-15 | ||
GB1557399A (en) * | 1976-04-09 | 1979-12-12 | Int Rectifier Corp | Gate controlled semiconductor device |
IT1075077B (it) * | 1977-03-08 | 1985-04-22 | Ates Componenti Elettron | Metodo pr realizzare contatti su semiconduttori |
US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
JPS57117276A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Semiconductor device |
GB2095904B (en) * | 1981-03-23 | 1985-11-27 | Gen Electric | Semiconductor device with built-up low resistance contact and laterally conducting second contact |
JPS5830147A (ja) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | 半導体装置 |
JPS59121871A (ja) * | 1982-12-28 | 1984-07-14 | Toshiba Corp | 半導体装置 |
DE3301666A1 (de) * | 1983-01-20 | 1984-07-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zur herstellung einer mehrschichtigen kontaktmetallisierung |
-
1983
- 1983-11-30 JP JP58228043A patent/JPS60119777A/ja active Pending
-
1984
- 1984-11-30 DE DE19843448379 patent/DE3448379C2/de not_active Expired - Fee Related
- 1984-11-30 GB GB8430310A patent/GB2150754B/en not_active Expired
- 1984-11-30 DE DE19843443784 patent/DE3443784A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60119777A (ja) | 1985-06-27 |
DE3448379C2 (de) | 1993-12-16 |
DE3443784A1 (de) | 1985-07-18 |
GB8430310D0 (en) | 1985-01-09 |
GB2150754A (en) | 1985-07-03 |
DE3443784C2 (de) | 1991-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19951026 |
|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19961130 |