GB1149606A - Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses - Google Patents

Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses

Info

Publication number
GB1149606A
GB1149606A GB4779/68A GB477968A GB1149606A GB 1149606 A GB1149606 A GB 1149606A GB 4779/68 A GB4779/68 A GB 4779/68A GB 477968 A GB477968 A GB 477968A GB 1149606 A GB1149606 A GB 1149606A
Authority
GB
United Kingdom
Prior art keywords
aluminium
nickel
layer
wafer
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4779/68A
Inventor
Robert Allen Carnes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB1149606A publication Critical patent/GB1149606A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Chemically Coating (AREA)

Abstract

1,149,606. Semi-conductor devices. MOTOROLA Inc. 30 Jan., 1968 [27 Feb., 1967], No. 4779/68. Heading H1K. A silicon wafer for a diode, transistor, or integrated circuit may be soft-soldered to a heat sink of copper or of nickel-plated aluminium after it (the wafer) has been coated with adherent layers of aluminium and nickel and with a very thin anti-tarnish layer of gold. To make such a structure, aluminium may be evaporated on to and sintered or alloyed to the silicon wafer; a thin layer of nickel is then formed on the aluminium by evaporation or by electroless plating (for example the surface is cleaned with a zinc solution and then immersed in a nickel solution), the layer then being sintered to the aluminium and a second nickel layer plated on. The gold layer is then applied by evaporation, sputtering, electroless plating, or by electroplating. Soft lead solder may be applied as a pre-form or by dipping or immersion techniques to bond the coated wafer to the heat sink.
GB4779/68A 1967-02-27 1968-01-30 Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses Expired GB1149606A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61863867A 1967-02-27 1967-02-27

Publications (1)

Publication Number Publication Date
GB1149606A true GB1149606A (en) 1969-04-23

Family

ID=24478504

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4779/68A Expired GB1149606A (en) 1967-02-27 1968-01-30 Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses

Country Status (4)

Country Link
BE (1) BE711076A (en)
FR (1) FR1555176A (en)
GB (1) GB1149606A (en)
NL (1) NL6802104A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0070435A2 (en) * 1981-07-02 1983-01-26 Matsushita Electronics Corporation Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0071314A2 (en) * 1981-07-31 1983-02-09 Koninklijke Philips Electronics N.V. Semiconductor devices and a solder for use in such devices
DE3443784A1 (en) * 1983-11-30 1985-07-18 Mitsubishi Denki K.K., Tokio/Tokyo GATE SHUT-OFF THYRISTOR
DE19606101A1 (en) * 1996-02-19 1997-08-21 Siemens Ag Semiconductor body with solder material layer
EP1195805A2 (en) * 2000-10-05 2002-04-10 SANYO ELECTRIC Co., Ltd. Heat radiation substrate and semiconductor module
US20070173045A1 (en) 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH662007A5 (en) * 1983-12-21 1987-08-31 Bbc Brown Boveri & Cie Method of soldering semiconductor components

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0070435A2 (en) * 1981-07-02 1983-01-26 Matsushita Electronics Corporation Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0070435A3 (en) * 1981-07-02 1984-11-21 Matsushita Electronics Corporation Semiconductor device comprising a semiconductor substrate bonded to a mounting means
EP0071314A2 (en) * 1981-07-31 1983-02-09 Koninklijke Philips Electronics N.V. Semiconductor devices and a solder for use in such devices
EP0071314A3 (en) * 1981-07-31 1984-04-25 Philips Electronic And Associated Industries Limited Semiconductor devices and a solder for use in such devices
DE3443784A1 (en) * 1983-11-30 1985-07-18 Mitsubishi Denki K.K., Tokio/Tokyo GATE SHUT-OFF THYRISTOR
DE3448379C2 (en) * 1983-11-30 1993-12-16 Mitsubishi Electric Corp Gate shutdown thyristor
DE19606101A1 (en) * 1996-02-19 1997-08-21 Siemens Ag Semiconductor body with solder material layer
US5901901A (en) * 1996-02-19 1999-05-11 Siemens Aktiengesellschaft Semiconductor assembly with solder material layer and method for soldering the semiconductor assemly
EP1195805A2 (en) * 2000-10-05 2002-04-10 SANYO ELECTRIC Co., Ltd. Heat radiation substrate and semiconductor module
EP1195805A3 (en) * 2000-10-05 2006-06-14 SANYO ELECTRIC Co., Ltd. Heat radiation substrate and semiconductor module
US20070173045A1 (en) 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
DE102006062029B4 (en) * 2006-01-23 2010-04-08 Mitsubishi Electric Corp. Method for producing a semiconductor device
US8183144B2 (en) 2006-01-23 2012-05-22 Mitsubishi Electric Corporation Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
NL6802104A (en) 1968-08-28
BE711076A (en) 1968-08-21
FR1555176A (en) 1969-01-24

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