GB2090057A - Test structures for semiconductor integrated circuits - Google Patents

Test structures for semiconductor integrated circuits Download PDF

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Publication number
GB2090057A
GB2090057A GB8135810A GB8135810A GB2090057A GB 2090057 A GB2090057 A GB 2090057A GB 8135810 A GB8135810 A GB 8135810A GB 8135810 A GB8135810 A GB 8135810A GB 2090057 A GB2090057 A GB 2090057A
Authority
GB
United Kingdom
Prior art keywords
source
circuit device
integrated circuit
drain regions
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8135810A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2090057A publication Critical patent/GB2090057A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
GB8135810A 1980-12-03 1981-11-27 Test structures for semiconductor integrated circuits Withdrawn GB2090057A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169553A JPS5793542A (en) 1980-12-03 1980-12-03 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
GB2090057A true GB2090057A (en) 1982-06-30

Family

ID=15888596

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8135810A Withdrawn GB2090057A (en) 1980-12-03 1981-11-27 Test structures for semiconductor integrated circuits

Country Status (5)

Country Link
JP (1) JPS5793542A (it)
DE (1) DE3146777A1 (it)
FR (1) FR2496989A1 (it)
GB (1) GB2090057A (it)
IT (1) IT1169283B (it)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4440799A (en) * 1982-10-22 1984-04-03 Rca Corporation Monitor for impurity levels in aluminum deposition
US4567430A (en) * 1981-09-08 1986-01-28 Recognition Equipment Incorporated Semiconductor device for automation of integrated photoarray characterization
FR2585864A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Procede et structure pour dispositifs de visualisation a cristaux adresses par matrice a transistors a couche mince.
FR2585879A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Depot et durcissement du titane de l'electrode de grille pour emploi dans des transistors inverses a effet de champ a couche mince
FR2585863A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Procede et structure pour dispositifs de visualisation a cristaux liquides adresses par matrice et transistors a couche mince.
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
US5457399A (en) * 1992-12-14 1995-10-10 Hughes Aircraft Company Microwave monolithic integrated circuit fabrication, test method and test probes
EP0685881A1 (en) * 1994-05-31 1995-12-06 AT&T Corp. Linewidth control apparatus and method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148929A (ja) * 1984-08-16 1986-03-10 Matsushita Electronics Corp 絶縁ゲ−ト型半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3697318A (en) * 1967-05-23 1972-10-10 Ibm Monolithic integrated structure including fabrication thereof
JPS4831516B1 (it) * 1969-10-17 1973-09-29
US3774088A (en) * 1972-12-29 1973-11-20 Ibm An integrated circuit test transistor structure and method of fabricating the same
FR2280203A1 (fr) * 1974-07-26 1976-02-20 Thomson Csf Procede d'ajustement de tension de seuil de transistors a effet de champ
US4016587A (en) * 1974-12-03 1977-04-05 International Business Machines Corporation Raised source and drain IGFET device and method
CA1074009A (en) * 1975-03-03 1980-03-18 Robert W. Brodersen Charge coupled device memory
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
EP0003413A3 (en) * 1978-01-19 1979-08-22 Sperry Corporation Improvements relating to semiconductor memories
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567430A (en) * 1981-09-08 1986-01-28 Recognition Equipment Incorporated Semiconductor device for automation of integrated photoarray characterization
US4440799A (en) * 1982-10-22 1984-04-03 Rca Corporation Monitor for impurity levels in aluminum deposition
EP0211401A2 (en) * 1985-08-02 1987-02-25 General Electric Company N+ Amorphous silicon thin film transistors for matrix addressed liquid crystal displays
FR2585879A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Depot et durcissement du titane de l'electrode de grille pour emploi dans des transistors inverses a effet de champ a couche mince
FR2585863A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Procede et structure pour dispositifs de visualisation a cristaux liquides adresses par matrice et transistors a couche mince.
EP0211402A2 (en) * 1985-08-02 1987-02-25 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
FR2585864A1 (fr) * 1985-08-02 1987-02-06 Gen Electric Procede et structure pour dispositifs de visualisation a cristaux adresses par matrice a transistors a couche mince.
EP0211370A2 (en) * 1985-08-02 1987-02-25 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
EP0211402A3 (en) * 1985-08-02 1988-05-04 General Electric Company Process and structure for thin film transistor matrix addressed liquid crystal displays
EP0211401A3 (en) * 1985-08-02 1988-05-18 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
EP0211370A3 (en) * 1985-08-02 1988-05-18 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
US5457399A (en) * 1992-12-14 1995-10-10 Hughes Aircraft Company Microwave monolithic integrated circuit fabrication, test method and test probes
EP0685881A1 (en) * 1994-05-31 1995-12-06 AT&T Corp. Linewidth control apparatus and method
US5780316A (en) * 1994-05-31 1998-07-14 Lucent Technologies Inc. Linewidth control apparatus and method

Also Published As

Publication number Publication date
IT8125408A0 (it) 1981-12-02
JPS5793542A (en) 1982-06-10
DE3146777A1 (de) 1982-09-16
FR2496989A1 (fr) 1982-06-25
IT1169283B (it) 1987-05-27

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)