GB2001494A - Improvements in or relating to devices for regulating the threshold voltages of IGFET transistors of integrated circuits - Google Patents

Improvements in or relating to devices for regulating the threshold voltages of IGFET transistors of integrated circuits

Info

Publication number
GB2001494A
GB2001494A GB7829324A GB7829324A GB2001494A GB 2001494 A GB2001494 A GB 2001494A GB 7829324 A GB7829324 A GB 7829324A GB 7829324 A GB7829324 A GB 7829324A GB 2001494 A GB2001494 A GB 2001494A
Authority
GB
United Kingdom
Prior art keywords
regulating
regulating transistor
substrate
integrated circuit
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7829324A
Other versions
GB2001494B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebauches SA
Original Assignee
Ebauches SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebauches SA filed Critical Ebauches SA
Publication of GB2001494A publication Critical patent/GB2001494A/en
Application granted granted Critical
Publication of GB2001494B publication Critical patent/GB2001494B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

A device is provided for regulating, to a predetermined value, the threshold voltage of IGFET transistors of an integrated circuit by polarization of the integrated circuit substrate. The device may be included in an integrated circuit having a reference line as its common point. The device comprises an IGFET regulating transistor integrated in the substrate and of the same conduction type as the transistors of the integrated circuit. Either the source or the drain of the regulating transistor is connected to the reference line. The source of the regulating transistor is connected to its gate and to a reference current generator. A direct voltage generator is connected between the drain of the regulating transistor and the substrate. In use, the source of the regulating transistor is polarized with respect to the substrate to a value which enables current from the reference current generator to flow through the regulating transistor. <IMAGE>
GB7829324A 1977-07-12 1978-07-10 Devices for regulating the threshhold voltages of igfet transistors of integrated circuits Expired GB2001494B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7721464A FR2397756A1 (en) 1977-07-12 1977-07-12 TRANSVERSAL FILTER WITH TRANSFER OF ELECTRICAL LOADS

Publications (2)

Publication Number Publication Date
GB2001494A true GB2001494A (en) 1979-01-31
GB2001494B GB2001494B (en) 1982-01-13

Family

ID=9193295

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7829324A Expired GB2001494B (en) 1977-07-12 1978-07-10 Devices for regulating the threshhold voltages of igfet transistors of integrated circuits

Country Status (5)

Country Link
JP (1) JPS5419632A (en)
DE (1) DE2830437A1 (en)
FR (1) FR2397756A1 (en)
GB (1) GB2001494B (en)
NL (1) NL7807408A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984002607A2 (en) * 1982-12-22 1984-07-05 Ncr Co Integrated circuit voltage multiplier
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
US5140182A (en) * 1989-06-09 1992-08-18 Texas Instruments Incorporated Plural stage voltage booster circuit with efficient electric charge transfer between successive stages

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414823A1 (en) * 1978-01-13 1979-08-10 Thomson Csf SEMICONDUCTOR PHASER DEVICE AND LOAD TRANSFER FILTER CONTAINING SUCH A DEVICE
FR2453543A1 (en) * 1979-04-06 1980-10-31 Thomson Csf TRANSVERSE FILTER WITH ELECTRIC CHARGE TRANSFER
DE2939513A1 (en) * 1979-09-28 1981-04-30 Siemens AG, 1000 Berlin und 8000 München Charge transfer device transversal filter - has several input stages switched in parallel and single output stage switchable to filters

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4739191A (en) * 1981-04-27 1988-04-19 Signetics Corporation Depletion-mode FET for the regulation of the on-chip generated substrate bias voltage
WO1984002607A2 (en) * 1982-12-22 1984-07-05 Ncr Co Integrated circuit voltage multiplier
WO1984002607A3 (en) * 1982-12-22 1984-08-02 Ncr Co Integrated circuit voltage multiplier
US5140182A (en) * 1989-06-09 1992-08-18 Texas Instruments Incorporated Plural stage voltage booster circuit with efficient electric charge transfer between successive stages

Also Published As

Publication number Publication date
NL7807408A (en) 1979-01-16
GB2001494B (en) 1982-01-13
DE2830437A1 (en) 1979-01-18
FR2397756A1 (en) 1979-02-09
JPS5419632A (en) 1979-02-14
FR2397756B1 (en) 1982-04-02

Similar Documents

Publication Publication Date Title
CH648453GA3 (en)
JPS55149871A (en) Line voltage detector
JPS5413779A (en) Semiconductor integrated circuit device
DE68910711D1 (en) Different timing for use in integrated circuits.
GB1475908A (en) Mos circuit
KR840008097A (en) Substrate Bias Voltage Control Circuit and Method
GB1127579A (en) Rectifying circuits
KR870011696A (en) Power supply voltage drop circuit
KR880004578A (en) CMOS integrated circuit device with latch-up protection circuit
GB2001494A (en) Improvements in or relating to devices for regulating the threshold voltages of IGFET transistors of integrated circuits
DE3784609D1 (en) INTEGRATED CIRCUIT WITH &#34;LATCH-UP&#34; PROTECTIVE CIRCUIT IN COMPLEMENTARY MOS CIRCUIT TECHNOLOGY.
CH614837B (en) DEVICE FOR ADJUSTING, TO A DETERMINED VALUE, THE THRESHOLD VOLTAGE OF IGFET TRANSISTORS OF AN INTEGRATED CIRCUIT BY POLARIZATION OF THE INTEGRATION SUBSTRATE.
KR940003011A (en) Voltage generation circuit without loss of threshold voltage of field effect transistor in output voltage
DE3766032D1 (en) CIRCUIT FOR LIMITING THE CURRENT.
JPS52117586A (en) Semiconductor device
KR960030395A (en) Low-voltage output circuit and semiconductor device
GB1314356A (en) Fet switching circuit
JPS641323A (en) Switching regulator
JPS54107246A (en) Analogue switch and sample hold circuit using it
JPS5667962A (en) Gate protection circuit of mos field effect transistor
SU662923A1 (en) Reference voltage generator
JPS55166953A (en) Semiconductor integrated circuit device
JPS57176595A (en) E-prom write-in circuit
JPS547149A (en) Constant current circuit
SU1379778A1 (en) D.c. voltage stabilizer

Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee