GB1525557A - Semiconductor structure having the function of a diode - Google Patents
Semiconductor structure having the function of a diodeInfo
- Publication number
- GB1525557A GB1525557A GB2675577A GB2675577A GB1525557A GB 1525557 A GB1525557 A GB 1525557A GB 2675577 A GB2675577 A GB 2675577A GB 2675577 A GB2675577 A GB 2675577A GB 1525557 A GB1525557 A GB 1525557A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- diode
- function
- semiconductor structure
- june
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1525557 Semiconductor devices SGS-ATES COMPONENTI ELETTRONICI SpA 27 June 1977 [25 June 1976] 26755/77 Heading H1K An IC diode having a high reverse saturation voltage is formed in an island defined by isolation regions 14 in a N-semiconductor layer 12 on a P-substrate 10, and includes a Pregion 18, an N<SP>+</SP> region 22 surrounding the P region at the surface, a P region 40 between the P region 18 and the N<SP>+</SP> region 22 at the surface, and a metal layer 43 connecting the P region 40 with the N<SP>+</SP> region 22. The conductivity types may be reversed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT2469676A IT1063522B (en) | 1976-06-25 | 1976-06-25 | SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1525557A true GB1525557A (en) | 1978-09-20 |
Family
ID=11214430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2675577A Expired GB1525557A (en) | 1976-06-25 | 1977-06-27 | Semiconductor structure having the function of a diode |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5319772A (en) |
BR (1) | BR7703967A (en) |
DE (1) | DE2728083A1 (en) |
FR (1) | FR2356274A1 (en) |
GB (1) | GB1525557A (en) |
IT (1) | IT1063522B (en) |
SE (1) | SE422641B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
JPS61150383A (en) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | Semiconductor device |
JPS6343455U (en) * | 1986-09-03 | 1988-03-23 | ||
DE9301093U1 (en) * | 1993-01-27 | 1994-05-26 | Ic - Haus Gmbh, 55294 Bodenheim | Circuit arrangement for reducing parasitic currents on integrated structures, in particular resistors |
-
1976
- 1976-06-25 IT IT2469676A patent/IT1063522B/en active
-
1977
- 1977-06-20 BR BR7703967A patent/BR7703967A/en unknown
- 1977-06-21 FR FR7718965A patent/FR2356274A1/en active Granted
- 1977-06-22 DE DE19772728083 patent/DE2728083A1/en not_active Withdrawn
- 1977-06-22 SE SE7707251A patent/SE422641B/en not_active IP Right Cessation
- 1977-06-24 JP JP7537077A patent/JPS5319772A/en active Pending
- 1977-06-27 GB GB2675577A patent/GB1525557A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5319772A (en) | 1978-02-23 |
SE7707251L (en) | 1977-12-26 |
IT1063522B (en) | 1985-02-11 |
FR2356274A1 (en) | 1978-01-20 |
FR2356274B1 (en) | 1982-02-26 |
DE2728083A1 (en) | 1978-01-12 |
SE422641B (en) | 1982-03-15 |
BR7703967A (en) | 1978-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19970626 |