FR2356276A1 - Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77) - Google Patents

Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77)

Info

Publication number
FR2356276A1
FR2356276A1 FR7718467A FR7718467A FR2356276A1 FR 2356276 A1 FR2356276 A1 FR 2356276A1 FR 7718467 A FR7718467 A FR 7718467A FR 7718467 A FR7718467 A FR 7718467A FR 2356276 A1 FR2356276 A1 FR 2356276A1
Authority
FR
France
Prior art keywords
semiconductor device
layers
zone
layer
reduced thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7718467A
Other languages
French (fr)
Other versions
FR2356276B1 (en
Inventor
Michael Stuart Adler
Victor Albert Keith Temple
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2356276A1 publication Critical patent/FR2356276A1/en
Application granted granted Critical
Publication of FR2356276B1 publication Critical patent/FR2356276B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A junction is produced between the two semiconductor layers. Two ideal, single-dimensional depletion thickness region in the two layers. In order to increase the device breakdown voltage, it has a relatively thin zone (28) in the first semi-conductor layer (24) which surrounds the device. A zone of a relatively constant thickness (Y), smaller than the thickness of the single-dimensional depletion region in the first semiconductor layer (24). This relatively thin zone (28) has a width at least equal to half the coupling distance of the pn-junction. Preferably the semi-conductor layers have different impurity concentrations. The pre-junction may be flat or planar.
FR7718467A 1976-06-21 1977-06-16 Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77) Granted FR2356276A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
FR2356276A1 true FR2356276A1 (en) 1978-01-20
FR2356276B1 FR2356276B1 (en) 1983-02-04

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718467A Granted FR2356276A1 (en) 1976-06-21 1977-06-16 Semiconductor device with two layers of opposite conductivity - has one layer with zone of reduced thickness peripherally surrounding semiconductor device (NL 23.12.77)

Country Status (5)

Country Link
JP (1) JPS538069A (en)
DE (1) DE2727487C2 (en)
FR (1) FR2356276A1 (en)
NL (1) NL180265C (en)
SE (1) SE7707190L (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449971A1 (en) * 1979-02-22 1980-09-19 Rca Corp ONE-TIME ATTACK METHOD FOR FORMING A MESA STRUCTURE HAVING MULTI-STAGE WALL
EP0144876A2 (en) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Semiconductor device
EP0164645A2 (en) * 1984-06-14 1985-12-18 Asea Brown Boveri Aktiengesellschaft Silicon semiconductor device having a contour of the border formed by chemical attack, and process for manufacturing this device
EP0389863A1 (en) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Process for manufacturing a high-voltage withstanding planar p-n junction

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (en) * 1984-10-11 1986-05-08 Hitachi Ltd Semiconductor device
DE10349908C5 (en) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Method for producing a doubly passivated power semiconductor device having a MESA edge structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (en) * 1963-01-30 1900-01-01
DE1539961A1 (en) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Semiconductor component with at least two pn junctions in the monocrystalline semiconductor body
DE1276207B (en) * 1966-09-09 1968-08-29 Licentia Gmbh Semiconductor component

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449971A1 (en) * 1979-02-22 1980-09-19 Rca Corp ONE-TIME ATTACK METHOD FOR FORMING A MESA STRUCTURE HAVING MULTI-STAGE WALL
EP0144876A2 (en) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Semiconductor device
EP0144876A3 (en) * 1983-12-07 1985-07-03 Bbc Aktiengesellschaft Brown, Boveri & Cie. Semiconductor device
EP0164645A2 (en) * 1984-06-14 1985-12-18 Asea Brown Boveri Aktiengesellschaft Silicon semiconductor device having a contour of the border formed by chemical attack, and process for manufacturing this device
EP0164645A3 (en) * 1984-06-14 1987-09-30 Asea Brown Boveri Aktiengesellschaft Silicon semiconductor device having a contour of the border formed by chemical attack, and process for manufacturing this device
EP0389863A1 (en) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Process for manufacturing a high-voltage withstanding planar p-n junction

Also Published As

Publication number Publication date
JPS5639057B2 (en) 1981-09-10
SE7707190L (en) 1977-12-22
DE2727487C2 (en) 1985-05-15
FR2356276B1 (en) 1983-02-04
NL180265C (en) 1987-01-16
JPS538069A (en) 1978-01-25
NL180265B (en) 1986-08-18
DE2727487A1 (en) 1977-12-29
NL7706389A (en) 1977-12-23

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Legal Events

Date Code Title Description
ST Notification of lapse