IT1063522B - SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT - Google Patents

SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT

Info

Publication number
IT1063522B
IT1063522B IT2469676A IT2469676A IT1063522B IT 1063522 B IT1063522 B IT 1063522B IT 2469676 A IT2469676 A IT 2469676A IT 2469676 A IT2469676 A IT 2469676A IT 1063522 B IT1063522 B IT 1063522B
Authority
IT
Italy
Prior art keywords
integrated circuit
semiconductor diode
collector ring
monolithic integrated
monolithic
Prior art date
Application number
IT2469676A
Other languages
Italian (it)
Inventor
Bruno Pacor
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT2469676A priority Critical patent/IT1063522B/en
Priority to US05/808,369 priority patent/US4117507A/en
Priority to BR7703967A priority patent/BR7703967A/en
Priority to FR7718965A priority patent/FR2356274A1/en
Priority to SE7707251A priority patent/SE422641B/en
Priority to DE19772728083 priority patent/DE2728083A1/en
Priority to JP7537077A priority patent/JPS5319772A/en
Priority to GB2675577A priority patent/GB1525557A/en
Application granted granted Critical
Publication of IT1063522B publication Critical patent/IT1063522B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0783—Lateral bipolar transistors in combination with diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
IT2469676A 1976-06-22 1976-06-25 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT IT1063522B (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT2469676A IT1063522B (en) 1976-06-25 1976-06-25 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT
US05/808,369 US4117507A (en) 1976-06-22 1977-06-20 Diode formed in integrated-circuit structure
BR7703967A BR7703967A (en) 1976-06-25 1977-06-20 SEMICONDUCTOR STRUCTURE THAT HAS DIODE FUNCTION
FR7718965A FR2356274A1 (en) 1976-06-25 1977-06-21 SEMICONDUCTOR STRUCTURE WITH DIODE FUNCTION FOR INTEGRATED MONOLITHIC CIRCUIT
SE7707251A SE422641B (en) 1976-06-25 1977-06-22 SEMICONDUCTOR ELEMENT WITH DIODFUNCTION
DE19772728083 DE2728083A1 (en) 1976-06-25 1977-06-22 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT
JP7537077A JPS5319772A (en) 1976-06-25 1977-06-24 Semiconductor device having diode function
GB2675577A GB1525557A (en) 1976-06-25 1977-06-27 Semiconductor structure having the function of a diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2469676A IT1063522B (en) 1976-06-25 1976-06-25 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT

Publications (1)

Publication Number Publication Date
IT1063522B true IT1063522B (en) 1985-02-11

Family

ID=11214430

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2469676A IT1063522B (en) 1976-06-22 1976-06-25 SEMICONDUCTOR DIODE WITH COLLECTOR RING FOR MONOLITHIC INTEGRATED CIRCUIT

Country Status (7)

Country Link
JP (1) JPS5319772A (en)
BR (1) BR7703967A (en)
DE (1) DE2728083A1 (en)
FR (1) FR2356274A1 (en)
GB (1) GB1525557A (en)
IT (1) IT1063522B (en)
SE (1) SE422641B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
JPS61150383A (en) * 1984-12-25 1986-07-09 Toshiba Corp Semiconductor device
JPS6343455U (en) * 1986-09-03 1988-03-23
DE9301093U1 (en) * 1993-01-27 1994-05-26 Ic - Haus Gmbh, 55294 Bodenheim Circuit arrangement for reducing parasitic currents on integrated structures, in particular resistors

Also Published As

Publication number Publication date
SE422641B (en) 1982-03-15
BR7703967A (en) 1978-05-16
FR2356274B1 (en) 1982-02-26
DE2728083A1 (en) 1978-01-12
SE7707251L (en) 1977-12-26
FR2356274A1 (en) 1978-01-20
GB1525557A (en) 1978-09-20
JPS5319772A (en) 1978-02-23

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940629