JPS55133573A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
JPS55133573A
JPS55133573A JP4141079A JP4141079A JPS55133573A JP S55133573 A JPS55133573 A JP S55133573A JP 4141079 A JP4141079 A JP 4141079A JP 4141079 A JP4141079 A JP 4141079A JP S55133573 A JPS55133573 A JP S55133573A
Authority
JP
Japan
Prior art keywords
layer
field effect
effect transistor
insulated gate
gate field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4141079A
Other languages
Japanese (ja)
Inventor
Kenji Hideshima
Tetsuo Ichikawa
Yuki Shimada
Kuniharu Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4141079A priority Critical patent/JPS55133573A/en
Publication of JPS55133573A publication Critical patent/JPS55133573A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To enable utilization of an effective chip by a geometrical disposition for increasing the length of a channel width in an insulated gate field effect transistor. CONSTITUTION:An n<->-type high specific resistance layer 102 is formed on an n<+>- type low specific resistance layer substrate 101, a p-type layer 103 becoming a channel forming region is formed on the layer 102, an n<+>-type layer 104 becoming a source region is formed on the region 103, and a source electrode 108 is connected to the layer 104. A recess 105 is formed to protrude to the layers 104, 103 to reach the layer 102. A gate electrode 107 is formed through a silicon dioxide 106 on the inner surface of the recess 105. A drain electrode 109 is formed on the substrate 101.
JP4141079A 1979-04-05 1979-04-05 Insulated gate field effect transistor Pending JPS55133573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4141079A JPS55133573A (en) 1979-04-05 1979-04-05 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4141079A JPS55133573A (en) 1979-04-05 1979-04-05 Insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS55133573A true JPS55133573A (en) 1980-10-17

Family

ID=12607579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4141079A Pending JPS55133573A (en) 1979-04-05 1979-04-05 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55133573A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929979A (en) * 1972-07-20 1974-03-16
JPS5367381A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929979A (en) * 1972-07-20 1974-03-16
JPS5367381A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact

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