GB1498266A - Method of silicon production - Google Patents

Method of silicon production

Info

Publication number
GB1498266A
GB1498266A GB1816875A GB1816875A GB1498266A GB 1498266 A GB1498266 A GB 1498266A GB 1816875 A GB1816875 A GB 1816875A GB 1816875 A GB1816875 A GB 1816875A GB 1498266 A GB1498266 A GB 1498266A
Authority
GB
United Kingdom
Prior art keywords
per
reactants
vol
reaction zone
per cent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1816875A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1498266A publication Critical patent/GB1498266A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Abstract

1498266 Si production TEXAS INSTRUMENTS Inc 1 May 1975 [13 May 1974] 18168/75 Heading C1A Si of electronic purity is prepared at a yield of from 0À04 to 0À06 g/l of reactant mixture, the mixture including 80-60 vol. per cent H 2 and 20-40 vol. per cent Si tetrachloride and/or a chlorosilane, the reactants being fed to a reaction zone containing a fluidized bed of Si of electronic purity held at between 950‹ C. and 1250‹ C. at a flow rate of 0À3-1À5 1 per min. per cm<SP>2</SP> of crosssection area of reaction zone. Preferably the reactants are SiCl 4 and SiHCl 2 , in a mole ratio between 4:1 and 1:1.
GB1816875A 1974-05-13 1975-05-01 Method of silicon production Expired GB1498266A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46917974A 1974-05-13 1974-05-13

Publications (1)

Publication Number Publication Date
GB1498266A true GB1498266A (en) 1978-01-18

Family

ID=23862763

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1816875A Expired GB1498266A (en) 1974-05-13 1975-05-01 Method of silicon production

Country Status (4)

Country Link
JP (1) JPS50155423A (en)
DE (1) DE2520774A1 (en)
FR (1) FR2271173B1 (en)
GB (1) GB1498266A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185008A (en) * 1985-12-28 1987-07-08 Korea Res Inst Chem Tech Method of preparing a high-purity polycrystalline silicon
WO2009025559A1 (en) 2007-08-17 2009-02-26 Silansil As Apparatus and method for compaction of silicon powder

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2620739A1 (en) * 1976-05-11 1977-12-01 Wacker Chemitronic PROCESS FOR PRODUCING HIGHLY PURE SILICON
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
JPH01282194A (en) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd Production of single crystal
JPH0742080Y2 (en) * 1990-07-12 1995-09-27 川崎重工業株式会社 Fluidized bed furnace with high temperature gas
DE10060469A1 (en) * 2000-12-06 2002-07-04 Solarworld Ag Process for the production of high-purity, granular silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2185008A (en) * 1985-12-28 1987-07-08 Korea Res Inst Chem Tech Method of preparing a high-purity polycrystalline silicon
WO2009025559A1 (en) 2007-08-17 2009-02-26 Silansil As Apparatus and method for compaction of silicon powder
EP2188213A1 (en) * 2007-08-17 2010-05-26 Silansil AS Apparatus and method for compaction of silicon powder
EP2188213A4 (en) * 2007-08-17 2012-05-23 Silansil As Apparatus and method for compaction of silicon powder

Also Published As

Publication number Publication date
DE2520774A1 (en) 1975-11-27
FR2271173A1 (en) 1975-12-12
JPS50155423A (en) 1975-12-15
FR2271173B1 (en) 1979-04-06

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee